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Shugurov KY, Mozharov AM, Fedorov VV, Blokhin SA, Neplokh VV, Mukhin IS. Extremely high frequency Schottky diodes based on single GaN nanowires. NANOTECHNOLOGY 2023; 34:245204. [PMID: 36928235 DOI: 10.1088/1361-6528/acc4cb] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2023] [Accepted: 03/15/2023] [Indexed: 06/18/2023]
Abstract
Gallium nitride (GaN) is one of the most promising materials for high-frequency devices owing to its prominent material properties. We report on the fabrication and study of a series of Schottky diodes in the ground-signal-ground topology based on individual GaN nanowires. The electrical characterization ofI-Vcurves demonstrated relatively high ideality factor value (about 6-9) in comparison to the planar Au/GaN diodes that can be attributed to the nanowire geometry. The effective barrier height in the studied structures was defined in the range of 0.25-0.4 eV. The small-signal frequency analysis was employed to study the dependency of the scattering parameters in the broad range from 0.1 to 40 GHz. The approximation fitting of the experimental data indicated the record high cutoff frequency of about 165.8 GHz.
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Affiliation(s)
| | | | - V V Fedorov
- Alferov University, Saint-Petersburg, Russia
| | | | - V V Neplokh
- Alferov University, Saint-Petersburg, Russia
- Peter the Great St.Petersburg Polytechnic University, Saint-Petersburg, Russia
- St. Petersburg State University, Saint-Petersburg, Russia
| | - I S Mukhin
- Alferov University, Saint-Petersburg, Russia
- Peter the Great St.Petersburg Polytechnic University, Saint-Petersburg, Russia
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2
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Dvoretckaia L, Gridchin V, Mozharov A, Maksimova A, Dragunova A, Melnichenko I, Mitin D, Vinogradov A, Mukhin I, Cirlin G. Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates. NANOMATERIALS 2022; 12:nano12121993. [PMID: 35745332 PMCID: PMC9230727 DOI: 10.3390/nano12121993] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/10/2022] [Revised: 06/06/2022] [Accepted: 06/07/2022] [Indexed: 12/19/2022]
Abstract
The direct integration of epitaxial III-V and III-N heterostructures on Si substrates is a promising platform for the development of optoelectronic devices. Nanowires, due to their unique geometry, allow for the direct synthesis of semiconductor light-emitting diodes (LED) on crystalline lattice-mismatched Si wafers. Here, we present molecular beam epitaxy of regular arrays n-GaN/i-InGaN/p-GaN heterostructured nanowires and tripods on Si/SiO2 substrates prepatterned with the use of cost-effective and rapid microsphere optical lithography. This approach provides the selective-area synthesis of the ordered nanowire arrays on large-area Si substrates. We experimentally show that the n-GaN NWs/n-Si interface demonstrates rectifying behavior and the fabricated n-GaN/i-InGaN/p-GaN NWs-based LEDs have electroluminescence in the broad spectral range, with a maximum near 500 nm, which can be employed for multicolor or white light screen development.
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Affiliation(s)
- Liliia Dvoretckaia
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (L.D.); (V.G.); (A.M.); (G.C.)
| | - Vladislav Gridchin
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (L.D.); (V.G.); (A.M.); (G.C.)
- Institute of Physics, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia;
| | - Alexey Mozharov
- Institute of Physics, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia;
| | - Alina Maksimova
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (L.D.); (V.G.); (A.M.); (G.C.)
| | - Anna Dragunova
- Department of Physics, National Research University Higher School of Economics, Kantemirovskaya 3/1 A, 194100 St. Petersburg, Russia; (A.D.); (I.M.)
| | - Ivan Melnichenko
- Department of Physics, National Research University Higher School of Economics, Kantemirovskaya 3/1 A, 194100 St. Petersburg, Russia; (A.D.); (I.M.)
| | - Dmitry Mitin
- Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia; (D.M.); (A.V.)
| | - Alexandr Vinogradov
- Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia; (D.M.); (A.V.)
| | - Ivan Mukhin
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (L.D.); (V.G.); (A.M.); (G.C.)
- Department of Chemistry, ITMO University, Lomonosova 9, 197101 St. Petersburg, Russia; (D.M.); (A.V.)
- Higher School of Engineering Physics, Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, 195251 St. Petersburg, Russia
- Correspondence:
| | - Georgy Cirlin
- Department of Physics, Alferov University, Khlopina 8/3, 194021 St. Petersburg, Russia; (L.D.); (V.G.); (A.M.); (G.C.)
- Institute of Physics, Saint Petersburg State University, Universitetskaya Emb. 7/9, 199034 St. Petersburg, Russia;
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3
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Wang T, Wang ZW, Zhang Y, Yang XT, Zhu YZ, Wang HF. Porous Ga 2 O 3 Nanotubes Derived from Urease-Mediated Interfacially-Grown NH 4 Ga(OH) 2 CO 3 for High-Efficient Hydrogen Evolution. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2104195. [PMID: 34729918 DOI: 10.1002/smll.202104195] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2021] [Revised: 09/04/2021] [Indexed: 06/13/2023]
Abstract
The authors proposed a novel template-free strategy, urease-mediated interfacial growth of NH4 Ga(OH)2 CO3 nanotubes at 20-50 °C, to fabricate the porous Ga2 O3 nanotubes. The subtlety of the proposed strategy is all the products from urea enzymolysis are utilized in formation of NH4 Ga(OH)2 CO3 precipitates, and the key for interfacial growth of NH4 Ga(OH)2 CO3 nanotubes is the dynamic match between the rate of CO2 bubble fusion and NH4 Ga(OH)2 CO3 precipitation. The proposed strategy works well for the doped porous Ga2 O3 nanotubes. As a proof-of-concept, the porous β-Ga2 O3 and β-Ga2 O3 :Cr0.001 nanotubes are used as photocatalysts or co-catalysts with Pt, for H2 evolution from water splitting. The H2 evolution rate of porous β-Ga2 O3 nanotubes reach 39.3 mmol g-1 h-1 with solar-to-hydrogen (STH) conversion efficiency of 2.11% (Hg lamp) or 498 µmol g-1 h-1 with STH of 0.03% (Xe lamp) respectively, both about 3 times of β-Ga2 O3 nanoparticles synthesized at pH 9.0 without urease. The Cr-doping enhances the in-the-dark H2 evolution rate pre-lighted by Hg lamp, and Pt co-catalysis further elevates the H2 evolution rate, for instance, the H2 evolution rate of Pt-loaded β-Ga2 O3 :Cr0.001 nanotubes reaches 54.7 mmol g-1 h-1 with STH of 2.94% under continuous lighting of Hg lamp and 1062 µmol g-1 h-1 in-the-dark.
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Affiliation(s)
- Ting Wang
- Research Center for Analytical Sciences, College of Chemistry, Nankai University, Tianjin Key Laboratory of Biosensing and Molecular Recognition, Tianjin, 300071, China
| | - Zheng-Wu Wang
- Research Center for Analytical Sciences, College of Chemistry, Nankai University, Tianjin Key Laboratory of Biosensing and Molecular Recognition, Tianjin, 300071, China
| | - Ye Zhang
- Research Center for Analytical Sciences, College of Chemistry, Nankai University, Tianjin Key Laboratory of Biosensing and Molecular Recognition, Tianjin, 300071, China
| | - Xiao-Ting Yang
- Research Center for Analytical Sciences, College of Chemistry, Nankai University, Tianjin Key Laboratory of Biosensing and Molecular Recognition, Tianjin, 300071, China
| | - Yi-Zhou Zhu
- State Key Laboratory and Institute of Elemento-Organic Chemistry, Nankai University, Tianjin, 300071, China
| | - He-Fang Wang
- Research Center for Analytical Sciences, College of Chemistry, Nankai University, Tianjin Key Laboratory of Biosensing and Molecular Recognition, Tianjin, 300071, China
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Saket O, Wang J, Amador-Mendez N, Morassi M, Kunti A, Bayle F, Collin S, Jollivet A, Babichev A, Sodhi T, Harmand JC, Julien FH, Gogneau N, Tchernycheva M. Investigation of the effect of the doping order in GaN nanowire p-n junctions grown by molecular-beam epitaxy. NANOTECHNOLOGY 2021; 32:085705. [PMID: 33171444 DOI: 10.1088/1361-6528/abc91a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We analyse the electrical and optical properties of single GaN nanowire p-n junctions grown by plasma-assisted molecular-beam epitaxy using magnesium and silicon as doping sources. Different junction architectures having either a n-base or a p-base structure are compared using optical and electrical analyses. Electron-beam induced current (EBIC) microscopy of the nanowires shows that in the case of a n-base p-n junction the parasitic radial growth enhanced by the magnesium (Mg) doping leads to a mixed axial-radial behaviour with strong wire-to-wire fluctuations of the junction position and shape. By reverting the doping order p-base p-n junctions with a purely axial well-defined structure and a low wire-to-wire dispersion are achieved. The good optical quality of the top n nanowire segment grown on a p-doped stem is preserved. A hole concentration in the p-doped segment exceeding 1018 cm-3 was extracted from EBIC mapping and photoluminescence analyses. This high concentration is reached without degrading the nanowire morphology.
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Affiliation(s)
- Omar Saket
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Junkang Wang
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Nuño Amador-Mendez
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Martina Morassi
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Arup Kunti
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Fabien Bayle
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Stéphane Collin
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Arnaud Jollivet
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | | | - Tanbir Sodhi
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Jean-Christophe Harmand
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - François H Julien
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Noelle Gogneau
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
| | - Maria Tchernycheva
- Centre de Nanosciences et de Nanotechnologies (C2N), UMR 9001 CNRS, Université Paris Saclay, 91120 Palaiseau, France
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5
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Daudin B, Siladie AM, Gruart M, den Hertog M, Bougerol C, Haas B, Rouvière JL, Robin E, Recio-Carretero MJ, Garro N, Cros A. The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes. NANOTECHNOLOGY 2021; 32:085606. [PMID: 33147580 DOI: 10.1088/1361-6528/abc780] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The spontaneous growth of GaN nanowires (NWs) in absence of catalyst is controlled by the Ga flux impinging both directly on the top and on the side walls and diffusing to the top. The presence of diffusion barriers on the top surface and at the frontier between the top and the sidewalls, however, causes an inhomogeneous distribution of Ga adatoms at the NW top surface resulting in a GaN accumulation in its periphery. The increased nucleation rate in the periphery promotes the spontaneous formation of superlattices in InGaN and AlGaN NWs. In the case of AlN NWs, the presence of Mg can enhance the otherwise short Al diffusion length along the sidewalls inducing the formation of AlN nanotubes.
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Affiliation(s)
- Bruno Daudin
- Univ. Grenoble Alpes, CEA, IRIG-PHELIQS, NPSC, 17 rue des martyrs, F-38000 Grenoble, France
| | | | - Marion Gruart
- Univ. Grenoble Alpes, CEA, IRIG-PHELIQS, NPSC, 17 rue des martyrs, F-38000 Grenoble, France
| | - Martien den Hertog
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 25 rue des martyrs, F-38000 Grenoble, France
| | - Catherine Bougerol
- Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 25 rue des martyrs, F-38000 Grenoble, France
| | - Benedikt Haas
- Univ. Grenoble Alpes, CEA, IRIG-MEM, LEMMA, 17 rue des martyrs, F-38000 Grenoble, France
| | - Jean-Luc Rouvière
- Univ. Grenoble Alpes, CEA, IRIG-MEM, LEMMA, 17 rue des martyrs, F-38000 Grenoble, France
| | - Eric Robin
- Univ. Grenoble Alpes, CEA, IRIG-MEM, LEMMA, 17 rue des martyrs, F-38000 Grenoble, France
| | | | - Núria Garro
- Institute of Materials Science (ICMUV), Universidad de Valencia, PO Box E-22085, Valencia, Spain
| | - Ana Cros
- Institute of Materials Science (ICMUV), Universidad de Valencia, PO Box E-22085, Valencia, Spain
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6
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Kochetkov FM, Neplokh V, Fedorov VV, Bolshakov AD, Sharov VA, Eliseev IE, Tchernycheva M, Cirlin GE, Nasibulin AG, Islamova RM, Mukhin IS. Fabrication and electrical study of large area free-standing membrane with embedded GaP NWs for flexible devices. NANOTECHNOLOGY 2020; 31:46LT01. [PMID: 32877371 DOI: 10.1088/1361-6528/abae98] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Flexible optoelectronic structures are required in a wide range of applications. Large scale modified silicone-embedded n-GaP nanowire arrays of a record 6 µm thin membranes were studied. A homogeneous silicone encapsulation was enabled by G-coating using a heavy-load centrifuge. The synthesized graft-copolymers of polydimethylsiloxane (PDMS) and polystyrene demonstrated two times lower adhesion to Si compared to standard PDMS, allowing 3 square inch area high quality silicone/nanowire membrane mechanical release, preserving the growth Si substrate for a further re-use after chemical cleaning. The 90% transparent single-walled carbon nanotubes electrical contacts to the embedded n-GaP nanowires demonstrated mechanical and electrical stability. The presented methods can be used for the fabrication of large scale flexible inorganic optoelectronic devices.
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7
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Maraj M, Nabi G, Usman K, Wang E, Wei W, Wang Y, Sun W. High Quality Growth of Cobalt Doped GaN Nanowires with Enhanced Ferromagnetic and Optical Response. MATERIALS (BASEL, SWITZERLAND) 2020; 13:E3537. [PMID: 32796564 PMCID: PMC7475854 DOI: 10.3390/ma13163537] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/16/2020] [Revised: 08/04/2020] [Accepted: 08/05/2020] [Indexed: 11/16/2022]
Abstract
Group III-V semiconductors with direct band gaps have become crucial for optoelectronic and microelectronic applications. Exploring these materials for spintronic applications is an important direction for many research groups. In this study, pure and cobalt doped GaN nanowires were grown on the Si substrate by the chemical vapor deposition (CVD) method. Sophisticated characterization techniques such as X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Energy Dispersive X-Ray Spectroscopy (EDS), Transmission Electron Microscopy (TEM), High-Resolution Transmission Electron Microscopy (HRTEM) and photoluminescence (PL) were used to characterize the structure, morphology, composition and optical properties of the nanowires. The doped nanowires have diameters ranging from 60-200 nm and lengths were found to be in microns. By optimizing the synthesis process, pure, smooth, single crystalline and highly dense nanowires have been grown on the Si substrate which possess better magnetic and optical properties. No any secondary phases were observed even with 8% cobalt doping. The magnetic properties of cobalt doped GaN showed a ferromagnetic response at room temperature. The value of saturation magnetization is found to be increased with increasing doping concentration and magnetic saturation was found to be 792.4 µemu for 8% cobalt doping. It was also depicted that the Co atoms are substituted at Ga sites in the GaN lattice. Furthermore N vacancies are also observed in the Co-doped GaN nanowires which was confirmed by the PL graph exhibiting nitrogen vacancy defects and strain related peaks at 455 nm (blue emission). PL and magnetic properties show their potential applications in spintronics.
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Affiliation(s)
- Mudassar Maraj
- Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (M.M.); (E.W.); (W.W.); (Y.W.)
- Department of Physics, University of Gujrat, Gujrat 50700, Pakistan
| | - Ghulam Nabi
- Department of Physics, University of Gujrat, Gujrat 50700, Pakistan
| | - Khurram Usman
- International Academy of Optoelectronics, South China Normal University, Zhaoqing 526000, China;
| | - Engui Wang
- Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (M.M.); (E.W.); (W.W.); (Y.W.)
| | - Wenwang Wei
- Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (M.M.); (E.W.); (W.W.); (Y.W.)
| | - Yukun Wang
- Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (M.M.); (E.W.); (W.W.); (Y.W.)
| | - Wenhong Sun
- Research Center for Optoelectronic Materials and Devices, School of Physical Science and Technology, Guangxi University, Nanning 530004, China; (M.M.); (E.W.); (W.W.); (Y.W.)
- Guangxi Key Laboratory of Processing for Non-Ferrous Metal and Featured Materials, Guangxi University, Nanning 530004, China
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8
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Wu S, Wu S, Song W, Wang L, Yi X, Liu Z, Wang J, Li J. Crystal phase evolution in kinked GaN nanowires. NANOTECHNOLOGY 2020; 31:145713. [PMID: 31860878 DOI: 10.1088/1361-6528/ab6479] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Seed-catalysed growth has been proved to be an ideal method to selectively tune the crystal structure of III-V nanowires along its growth axis. However, few results on relevant nitride NWs have been reported. In this study, we demonstrate the growth of epitaxial kinked wurtzite (WZ)/zinc-blende (ZB) heterostructure GaN NW arrays under the oxygen rich condition using hydride vapour-liquid-solid vapour phase epitaxy (VLS-HVPE). The typical GaN crystal includes WZ and ZB phases throughout the whole NW structure. A detailed structural analysis indicates that a stacking faults free zone was occasionally observed near the NW tips and in the relatively long kinked 〈11-23〉 directions segments (>200 nm). Furthermore, some NWs (<5%) develop phase boundaries, resulting in kinking and crystal phase evolution. A layer-by-layer growth mode was proposed to explain the crystal phase evolution along the phase boundaries. This study provides new insights into the controlled growth of wurtzite (WZ)/zinc-blende (ZB) heterostructure GaN NW.
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Affiliation(s)
- Shaoteng Wu
- State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing, 100049, People's Republic of China. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore
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9
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Shugurov KY, Mozharov AM, Bolshakov AD, Fedorov VV, Sapunov GA, Shtrom IV, Uvarov AV, Kudryashov DA, Baranov AI, Yu Mikhailovskii V, Neplokh VV, Tchernycheva M, Cirlin GE, Mukhin IS. Hydrogen passivation of the n-GaN nanowire/p-Si heterointerface. NANOTECHNOLOGY 2020; 31:244003. [PMID: 32066120 DOI: 10.1088/1361-6528/ab76f2] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The influence of hydrogen plasma treatment on the electrical and optical properties of vertical GaN nanowire (NW)/Si heterostructures synthesized via plasma assisted molecular beam epitaxy is studied. The effect of the treatment is thoroughly studied via variation of the passivation duration. Photoluminescence investigation demonstrates that the passivation affects the doping of the GaN NWs. The samples were processed as photodiodes with a top transparent electrode to obtain detailed information about the n-GaN NWs/p-Si heterointerface under illumination. The electron beam induced current measurements demonstrated the absence of potential barriers between the active parts of the diode and the contacts, indicating ohmic behavior of the latter. I-V characteristics obtained in the dark and under illumination show that hydrogen can effectively passivate the recombination centers at the GaN NWs/Si heterointerface. The optimum passivation duration, providing improved electrical properties, is found to be 10 min within the studied passivation regimes. It is demonstrated that longer treatment causes degradation of the electrical properties. The discovered phenomenon is discussed in detail.
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Affiliation(s)
- K Yu Shugurov
- Alferov university (former St Petersburg Academic university), Khlopina 8/3, 194021, St. Petersburg, Russia
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10
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Bolshakov AD, Fedorov VV, Shugurov KY, Mozharov AM, Sapunov GA, Shtrom IV, Mukhin MS, Uvarov AV, Cirlin GE, Mukhin IS. Effects of the surface preparation and buffer layer on the morphology, electronic and optical properties of the GaN nanowires on Si. NANOTECHNOLOGY 2019; 30:395602. [PMID: 31234150 DOI: 10.1088/1361-6528/ab2c0c] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The role of Si (111) substrate surface preparation and buffer layer composition in the growth, electronic and optical properties of the GaN nanowires (NWs) synthesized via plasma-assisted molecular beam epitaxy is studied. A comparison study of GaN NWs growth on the bare Si (111) substrate, silicon nitride interlayer, predeposited AlN and GaO x buffer layers, monolayer thick Ga wetting layer and GaN seeding layer prepared by the droplet epitaxy is performed. It is demonstrated that the homogeneity and the morphology of the NW arrays drastically depend on the chosen buffer layer and surface preparation technique. An effect of the buffer and seeding layers on the nucleation and desorption is also discussed. The lowest NWs surface density of 14 μm-2 is obtained on AlN buffer layer and the highest density exceeding the latter value by more than an order of magnitude corresponds to the growth on the 0.3 ML thick Ga wetting layer. It is shown, that the highest NWs mean elongation rate is obtained with AlN buffer layer, while the lowest elongation rate corresponds to the bare Si (111) surface and it is twice as lower as the first case. It is found, that use of AlN buffer layer corresponds to the most homogeneous NWs array with the smallest length dispersion while the least homogeneous array corresponds to the bare Si substrate. Vertically aligned GaN NWs array on the wide bandgap GaO x semiconductor buffer layer grown by plasma-enhanced chemical vapor deposition demonstrates its potential for electronic applications. Photoluminescence (PL) study of the synthesized samples is characterized by an intense optical response related to the excitons bound to neutral donors. The highest PL intensity is obtained in the sample with AlN buffer layer.
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Affiliation(s)
- A D Bolshakov
- St. Petersburg Academic University, Khlopina 8/3, 194021, St. Petersburg, Russia
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11
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Fedorov VV, Bolshakov AD, Kirilenko DA, Mozharov AM, Sitnikova AA, Sapunov GA, Dvoretckaia LN, Shtrom IV, Cirlin GE, Mukhin IS. Droplet epitaxy mediated growth of GaN nanostructures on Si (111) via plasma-assisted molecular beam epitaxy. CrystEngComm 2018. [DOI: 10.1039/c8ce00348c] [Citation(s) in RCA: 24] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We demonstrate that the use of a GaN seeding layer prepared prior to the growth of epitaxial GaN on Si (111) can lead to the formation of oriented arrays of Y-shaped nanoislands and nanowires and affects the surface density of the nanostructures.
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Affiliation(s)
- V. V. Fedorov
- St. Petersburg Academic University
- St. Petersburg
- Russia
| | | | - D. A. Kirilenko
- ITMO University
- St. Petersburg
- Russia
- Ioffe Institute
- Saint Petersburg
| | | | | | - G. A. Sapunov
- St. Petersburg Academic University
- St. Petersburg
- Russia
| | | | - I. V. Shtrom
- Ioffe Institute
- Saint Petersburg
- Russia
- Institute for Analytical Instrumentation RAS
- St. Petersburg
| | - G. E. Cirlin
- St. Petersburg Academic University
- St. Petersburg
- Russia
- ITMO University
- St. Petersburg
| | - I. S. Mukhin
- St. Petersburg Academic University
- St. Petersburg
- Russia
- ITMO University
- St. Petersburg
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