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Smirnov AB, Savkina RK, Udovytska RS, Gudymenko OI, Kladko VP, Korchovyi AA. Ion Beam Nanostructuring of HgCdTe Ternary Compound. Nanoscale Res Lett 2017; 12:320. [PMID: 28472869 PMCID: PMC5413464 DOI: 10.1186/s11671-017-2093-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/01/2017] [Accepted: 04/20/2017] [Indexed: 06/07/2023]
Abstract
Systematic study of mercury cadmium telluride thin films subjected to the ion beam bombardment was carried out. The evolution of surface morphology of (111) Hg1 - x Cd x Te (x ~ 0.223) epilayers due to 100 keV B+ and Ag+ ion irradiation was studied by AFM and SEM methods. X-ray photoelectron spectroscopy and X-ray diffraction methods were used for the investigation of the chemical compound and structural properties of the surface and subsurface region. It was found that in the range of nanoscale, arrays of holes and mounds on Hg0.777Cd0.223Te (111) surface as well as the polycrystalline Hg1 - x Cd x Te cubic phase with alternative compound (x ~ 0.20) have been fabricated using 100 keV ion beam irradiation of the basic material. Charge transport investigation with non-stationary impedance spectroscopy method has shown that boron-implanted structures are characterized by capacity-type impedance whereas for silver-implanted structures, an inductive-type impedance (or "negative capacitance") is observed. A hybrid system, which integrates the nanostructured ternary compound (HgCdTe) with metal-oxide (Ag2O) inclusions, was fabricated by Ag+ ion bombardment. The sensitivity of such metal-oxide-semiconductor hybrid structure for sub-THz radiation was detected with NEP ~ 4.5 × 10-8 W/Hz1/2at ν ≈ 140 GHz and 296 K without amplification.
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Affiliation(s)
- Aleksey B. Smirnov
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Prospect Nauky, Kyiv, 03028 Ukraine
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Prospect Nauky, Kyiv, 03028 Ukraine
| | - Rada K. Savkina
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Prospect Nauky, Kyiv, 03028 Ukraine
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Prospect Nauky, Kyiv, 03028 Ukraine
| | - Ruslana S. Udovytska
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Prospect Nauky, Kyiv, 03028 Ukraine
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Prospect Nauky, Kyiv, 03028 Ukraine
| | - Oleksandr I. Gudymenko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Prospect Nauky, Kyiv, 03028 Ukraine
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Prospect Nauky, Kyiv, 03028 Ukraine
| | - Vasyl P. Kladko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Prospect Nauky, Kyiv, 03028 Ukraine
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Prospect Nauky, Kyiv, 03028 Ukraine
| | - Andrii A. Korchovyi
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Prospect Nauky, Kyiv, 03028 Ukraine
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Prospect Nauky, Kyiv, 03028 Ukraine
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Savkina RK, Gudymenko AI, Kladko VP, Korchovyi AA, Nikolenko AS, Smirnov AB, Stara TR, Strelchuk VV. Silicon Substrate Strained and Structured via Cavitation Effect for Photovoltaic and Biomedical Application. Nanoscale Res Lett 2016; 11:183. [PMID: 27067731 PMCID: PMC4828344 DOI: 10.1186/s11671-016-1400-2] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/05/2016] [Accepted: 04/04/2016] [Indexed: 06/05/2023]
Abstract
A hybrid structure, which integrates the nanostructured silicon with a bio-active silicate, is fabricated using the method of MHz sonication in the cryogenic environment. Optical, atomic force, and scanning electron microscopy techniques as well as energy dispersive X-ray spectroscopy were used for the investigation of the morphology and chemical compound of the structured surface. Micro-Raman as well as X-ray diffraction, ellipsometry, and photovoltage spectroscopy was used for the obtained structures characterization. Ellipsometer measurements demonstrated the formation of the layer with the thicknesses ~700 nm and optical parameters closed to SiO2 compound with an additional top layer of the thicknesses ~15 nm and the refractive index ~1. Micro-Raman investigation detects an appearance of Ca-O local vibrational mode, and the stretching vibration of SiO4 chains characterized the wollastonite form of CaSiO3. A significant rise in the value and an expansion of the spectral range of the surface photovoltage for silicon structured via the megasonic processing was found. The concept of biocompatible photovoltaic cell on the base of Si\CaSiO3 structure for the application in bioelectronics was proposed.
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Affiliation(s)
- Rada K Savkina
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauky, 41, Kyiv, 03028, Ukraine.
| | - Aleksandr I Gudymenko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauky, 41, Kyiv, 03028, Ukraine
| | - Vasyl P Kladko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauky, 41, Kyiv, 03028, Ukraine
| | - Andrii A Korchovyi
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauky, 41, Kyiv, 03028, Ukraine
| | - Andrii S Nikolenko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauky, 41, Kyiv, 03028, Ukraine
| | - Aleksey B Smirnov
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauky, 41, Kyiv, 03028, Ukraine
| | - Tatyana R Stara
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauky, 41, Kyiv, 03028, Ukraine
| | - Viktor V Strelchuk
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospect Nauky, 41, Kyiv, 03028, Ukraine
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Stetsenko MO, Maksimenko LS, Rudenko SP, Krishchenko IM, Korchovyi AA, Kryvyi SB, Kaganovich EB, Serdega BK. Surface Plasmon's Dispersion Properties of Porous Gold Films. Nanoscale Res Lett 2016; 11:116. [PMID: 26925864 PMCID: PMC4771662 DOI: 10.1186/s11671-016-1327-7] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2015] [Accepted: 02/10/2016] [Indexed: 05/31/2023]
Abstract
Nanostructure porous films with arrays of gold nanoparticles (Au NPs) have been produced by pulsed laser deposition. Dispersion properties of surface plasmons have been studied by the modulation-polarization spectroscopy technique. The dispersion relations for radiative modes and two types of non-radiative modes of localized and propagating surface plasmons were obtained. The branches of propagating modes were characterized by negative group velocity caused by spatial dispersion of dielectric function. The propagating modes are caused by dipole-dipole interactions between adjacent Au NPs. The frequencies and relaxation parameters of surface plasmon resonances and the plasma frequencies for Αu NPs were obtained. The relation between the surface plasmon's properties and formation conditions of films with arrays of Αu NPs is discussed.
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Affiliation(s)
- M O Stetsenko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, Pr. Nauky, Kyiv, 03028, Ukraine.
| | - L S Maksimenko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, Pr. Nauky, Kyiv, 03028, Ukraine
| | - S P Rudenko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, Pr. Nauky, Kyiv, 03028, Ukraine
| | - I M Krishchenko
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, Pr. Nauky, Kyiv, 03028, Ukraine
| | - A A Korchovyi
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, Pr. Nauky, Kyiv, 03028, Ukraine
| | - S B Kryvyi
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, Pr. Nauky, Kyiv, 03028, Ukraine
| | - E B Kaganovich
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, Pr. Nauky, Kyiv, 03028, Ukraine
| | - B K Serdega
- V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45, Pr. Nauky, Kyiv, 03028, Ukraine
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Lapchuk A, Pashkevich GA, Prygun OV, Yurlov V, Borodin Y, Kryuchyn A, Korchovyi AA, Shylo S. Experiment evaluation of speckle suppression efficiency of 2D quasi-spiral M-sequence-based diffractive optical element. Appl Opt 2015; 54:E47-E54. [PMID: 26479664 DOI: 10.1364/ao.54.000e47] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
The quasi-spiral 2D diffractive optical element (DOE) based on M-sequence of length N=15 is designed and manufactured. The speckle suppression efficiency by the DOE rotation is measured. The speckle suppression coefficients of 10.5, 6, and 4 are obtained for green, violet, and red laser beams, respectively. The results of numerical simulation and experimental data show that the quasi-spiral binary DOE structure can be as effective in speckle reduction as a periodic 2D DOE structure. The numerical simulation and experimental results show that the speckle suppression efficiency of the 2D DOE structure decreases approximately twice at the boundaries of the visible range. It is shown that a replacement of this structure with the bilateral 1D DOE allows obtaining the maximum speckle suppression efficiency in the entire visible range of light.
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