Charge Mobility and Strain Engineering in Two-Step MS-Grown MoS2/Seed Layer Heterointerface and Photo-Excitation Mechanism

Two-dimensional (2D) materials have potential application and wide development prospects in photoelectron and spintronic devices. However, the properties of different growth conditions are challenging to study in the future. This, in turn, hinders further research into 2D materials and the manufacture of high-quality devices. A comprehensive understanding of the ultrafast laser spectroscopy and dynamics that take into account the substrate-transition metal dichalcogenide (TMD) interaction is lacking. Here, the strain effect is elucidated by systematically investigating the interfacial interaction between different substrates and MoS₂. The strain and interface engineering of MoS₂/seeds layer heterointerface and light-matter coupling are discussed in the Raman and photoluminescence spectra. The dramatic enhanced PL originates from the phase transition of MoS₂ on different substrates and electron-hole pairs dissociated by exciton screening effect. Finite-difference time-domain simulation confirmed that the electric field, magnetic field, and polarization field of the heterojunction system changed after the strain was applied. In addition, based on the dependence of physical parameters of MoS₂, the relative numerical changes of physical parameters of MoS₂ films on different substrates as well as the photoelectric transfer, strain, and charge doping levels on the surface or interface will provide a direction for optimizing the selection of various devices.

Hydrothermal synthesis and controlled growth of group-VIB W metal compound nanostructures from tungsten oxide to tungsten disulphide

Two-dimensional lateral group-VIB transition metal dichalcogenides (TMDs) have attracted much attention in the fast evolving field of advanced photoelectric functional materials, but their controllable fabrication is challenging. Herein, an emerging synthetic route for sulfurization of tungsten oxide was developed. During the hydrothermal reaction, the optimization of the precursor selection and synthesis parameters led to the tunable properties of WO₃-WS_xO_y-WS₂ nanostructures. The vulcanization was thermodynamically favorably at low temperatures and in an environment with a sufficient S source, wherein WO₃ was reduced by H atoms to WO_3-x, and S atoms were preferentially adsorbed on O vacancies. The WS_xO_y nanostructures have a narrow band-gap attributed to the effect of S on the valence band top and electronic density of states by density functional theory. The photocurrent response and charge transfer properties of WS_xO_y were improved due to the charge transport between WS₂ and WO₃. Understanding the formation and transformation of WS₂ nanostructures in solution contributes to the discovery of the important structure-efficiency relationship, which may be extended to other TMDs systems. Hence, extensive research efforts are still needed to develop safer and more efficient synthesis and modification methods to fully utilize the distinctive advantageous properties of TMDs in the photoelectric field.

Composition engineering of AZO films for controlled photon-electron conversion and ultrafast nonlinear optical behavior

Exploring micro-nano photonic crystals as nonlinear optical switching and optical limiting devices for Gaussian light fields with ultrashort pulse widths has attracted extensive research, mainly originating from its controllable modulation of the third/fifth-order nonlinear optical behavior and ultrafast carrier dynamics. In this work, Al-doped ZnO (AZO) films with controllable and excellent third-order nonlinear optical behavior have been uniformly deposited on quartz substrates by a single-step co-sputtering method. Al dopant-dependent ultrafast carrier dynamics and nonlinear optical properties in hexagonal ZnO films are discussed. The bonding mode of Al atoms in the ZnO lattice changed from substitutional to substitutional-decoration, which has been controllably achieved at different DC sputtering powers. The strain, crystallinity, grain size, dislocation density, and texture coefficient of the sample were quantitatively calculated by XRD and Raman spectroscopy, which confirmed that the phase parameters can be regulated by the sputtering power. In addition, Hall test and photoluminescence spectra showed the contribution of the donor level on the band structure and the electron transfer characteristics, which will provide a strategy for understanding multi-type carrier dynamics under strong light fields. The finite-difference time-domain method was used to simulate the linear optical absorption/transmittance of the sample under a plane-wave optical field, which proved that the light-matter interaction failed to be significantly suppressed by shading and scattering effects. The carrier relaxation process and nonlinear absorption/refractive effects were controllably optimized by dopant Al atoms, which were confirmed by Z-scan and transient absorption spectroscopy. Compared with pure ZnO films, the third-order nonlinear refraction and absorption coefficients of AZO-power films can reach -8.926 × 10^-15 m² W^-1 and -0.634 × 10^-7 m W^-1, respectively. AZO films with ultrafast carrier dynamics and controllable excellent third-order nonlinear optical coefficients can be used as all-optical switches and optical limiting devices, which provide a reference for advanced micro-nano optical materials.

Two-step strategy, growth mechanism and optical properties of plasmonic Ag-modified ZnO nanomaterials

In this paper, plasma silver (Ag) modified zinc oxide (ZnO) (AZO) was used to form AZO nanomaterials (including AZO nanofilms (NFm), AZO nanowires (NWs) and AZO nanoflowers (NFw)) in a two-step-controlled manner to investigate the effect of compounding different contents of Ag on the linear optical aspects of ZnO materials. The growth mechanism of the AZO nanomaterials with different strategies is discussed. If Ag nanoparticles (NPs) grow on the ZnO NFm surface, they first grow with ZnO as the core and then self-core into islands, which are undoubtedly influenced by factors such as the growth mechanism of ZnO as well as Ag. If Ag is grown on the surface of the ZnO NWs and ZnO NFw, it is more likely to self-core owing to factors such as the roughness of the ZnO NWs and ZnO NFw surfaces. The AZO nanomaterials have excellent optical properties based on the surface plasmon resonance, local electromagnetic field and charge transfer mechanism between Ag and ZnO. With the increase in Ag content, the absorption edges of AZO NFm are red-shifted, and the absorption edges of AZO NWs and AZO NFw are first blue-shifted and then red-shifted. The results show that AZO nanomaterials prepared using different methods not only have different growth morphologies, but also have different optical properties with potential for the preparation of optical devices.

The plasmonic AZO nanomaterials in a two-step-controlled manner to investigate the effect of compounding different contents of Ag on the linear optical aspects of ZnO materials.

The photoluminescence, field emission and femtosecond nonlinear absorption properties of Al-doped ZnO nanowires, nanobelts, and nanoplane-cone morphologies

Al-doped ZnO (AZO) nanowires, nanobelts and nanoplane-cone nanostructures have been successfully synthesized.

Ultrafast nonlinear optical properties and carrier dynamics of silver nanoparticle-decorated ZnO nanowires

Silver (Ag) nanoparticle-decorated zinc oxide (ZnO) nanowires (Ag–ZnO) have been successfully synthesized by chemical vapour deposition and the magnetron sputtering method. Scanning electron microscopy images indicate that Ag nanoparticles are distributed uniformly on the surface of the ZnO nanowires. The results of room temperature photoluminescence (RTPL) reveal two major emission peaks for the Ag–ZnO nanowires, and the emission peaks in the visible region are stronger than those of the unmodified ZnO nanowires. The mechanism of RTPL and low temperature photoluminescence (LTPL) emission is discussed in detail. Nonlinear optical properties and ultrafast dynamics have been investigated using the Z-scan and two color pump–probe (TCPP) techniques, respectively. The nonlinear absorption properties in the nano-, pico- and femto-second regime have been analyzed using the singlet state three-level and four-level models, respectively. The samples show self-focusing nonlinearity and good two-photon absorption (TPA)-induced ground state saturation absorption as well as excited state reverse saturable absorption behavior. For the nanosecond and picosecond pulses, the reverse saturated absorption in the excited state mainly originates from the absorption at low excited states or deep levels; however, for the femtosecond pulse, it is caused by the absorption at high excited states. The TCPP results show that the ground state or deep level light bleaching (for nano- and pico-second regime) and TPA-induced excited-state absorption (for femtosecond regime) behaviors range from 470 nm to 620 nm. The remarkable nonlinear optical properties reveal that Ag–ZnO nanowires are potential nanocomposite materials for the development of nonlinear optical devices.

Silver (Ag) nanoparticle-decorated zinc oxide (ZnO) nanowires (Ag–ZnO) have been successfully synthesized by chemical vapour deposition and the magnetron sputtering method.

Third-Order Nonlinear Optical Properties of InN Thin Films Under 532 nm Nanosecond Laser Pulses

In order to investigate the third-order nonlinear optical properties of InN thin film, the sample was deposited on sapphire substrates by reactive RF magnetron sputtering. The prepared samples with a hexagonal wurtzite structure were confirmed by both X-ray diffraction (XRD) and scanning electron microscope (SEM). The optical absorption spectrum of the prepared samples was measured by a double beam UV/Visible spectrophotometer. The results show that the optical bandgap of deposited thin film is 2.06 eV. The third-order nonlinear optical coefficients of the film were measured by using the open and closed aperture transmission Z-scan (TZ-scan) technique under nanosecond laser pulses with a wavelength of 532 nm. The test results show that the prepared InN thin film performs strong saturation absorption, and the InN thin film with positive nonlinear refractive index coefficient is the self-focusing material under the conditions of the nanosecond laser pulses with the photon energy larger than the bandgap of prepared samples.

Effects of extract F of red-rooted Salvia on mucosal lesions of gastric corpus and antrum induced by hemorrhagic shock-reperfusion in rats

AIM

To compare the effects of extract F of red-rooted Salvia (EFRRS) on mucosal lesions of gastric corpus and antrum induced by hemorrhagic shock and reperfusion in rats.

METHODS

The rats were subject to hemorrhagic shock and followed by reperfusion, and were divided randomly into two groups. Group 1 received saline, and group 2 received EFRRS intravenously. The index of gastric mucosal lesions (IGML) was expressed as the percentage of lesional area in the corpus or antrum. The degree of gastric mucosal lesions (DGML) was catalogued grade 0,1,2 and 3. The concentrations of prostaglandins (PGs) were measured by radioimmunoassay. The concentration of MDA was measured according to the procedures of Asakawa. The activity of SOD was measured by the biochemical way. The growth rates or inhibitory rates of above-mentioned parameters were calculated.

RESULTS

As compared with IGML (%), grade 3 damage (%) and MDA content (nmol/g tissue) of gastric antrum which were respectively 7.96 +/- 0.59, 34.86 +/- 4.96 and 156.98 +/- 16.12, those of gastric corpus which were respectively 23.18 +/- 6.82, 58.44 +/- 9.07 and 230.56 +/- 19.37 increased markedly (P <0.01), whereas the grade 0 damage, grade 1 damage, the concentrations of PGE(2) and PGI(2)(pg/mg tissue), the ratio of PGI(2)/TXA(2) and the activity of SOD (U/g tissue) of corpus which were respectively 3.01 +/- 1.01, 8.35 +/- 1.95, 540.48 +/- 182.78, 714.38 +/- 123.74, 17.38 +/- 5.93 and 134.29 +/- 13.35 were markedly lower than those of antrum which were respectively 13.92 +/- 2.25, 26.78 +/- 6.06, 2218.56 +/- 433.12, 2531.76 +/- 492.35, 43.46 +/- 8.51 and 187.45 +/- 17.67 (P<0.01) after hemorrhagic shock and reperfusion. After intravenous EFRRS, the growth rates (%) of grade 0 damage, grade 1 damage, the concentrations of PGE(2) and PGI(2), the ratio of PGI(2)/TXA(2) and the activity of SOD of corpus which were respectively 632.56, 308.62, 40.75, 74.75, 92.29 and 122.25 were higher than those in antrum which were respectively 104.89, 58.40, 11.12, 56.58, 30.65 and 82.64, whereas the inhibitory rates (%) of IGML, grade 3 damage and MDA content of gastric corpus were 82.93, 65.32 and 59.09, being higher than those of gastric antrum which were 76.64, 53.18 and 42.37.

CONCLUSION

After hemorrhagic shock reperfusion, the gastric mucosal lesions in the corpus were more severe than those in the antrum, which were related not only to the different distribution of endogenous PGs in the mucosa, but also to the different ability of anti-oxidation of the mucosa. The protective effect of EFRRS on the gastric mucosa in the corpus was more evident than that in the antrum, which was related to higher growth degree of PGs contents and anti-oxitative ability in gastric corpus after administration of EFRRS.