Dynamics of Two Distinct Exciton Populations in Methyl-Functionalized Germanane

Methyl-substituted germanane is an emerging material that has been proposed for novel applications in optoelectronics, photoelectrocatalysis, and biosensors. It is a two-dimensional semiconductor with a strong above-gap fluorescence associated with water intercalation. Here, we use time-resolved photoluminescence spectroscopy to understand the mechanism causing this fluorescence. We show that it originates from two distinct exciton populations. Both populations recombine exponentially, accompanied by the thermally activated transfer of exciton population from the shorter- to the longer-lived type. The two exciton populations involve different electronic levels and couple to different phonons. The longer-lived type of exciton migrates within the disordered energy landscape of localized recombination centers. These outcomes shed light on the fundamental optical and electronic properties of functionalized germanane, enabling the groundwork for future applications in optoelectronics, light harvesting, and sensing.

Time-domain spectroscopy of methane excited by resonant high-energy mid-IR pulses

We describe the implementation of nonlinear time-domain spectroscopy of rotovibrational IR-active modes in methane through broadband Four-Wave Mixing driven by resonant high-energy mid infrared laser pulses. At high driving pulse intensities we observe an efficient vibrational ladder climbing triggered in the molecules. This study opens the possibility to impulsively and selectively excite molecules of biological interest to high-lying vibrational states and to characterize their dynamics.

Stability and universal encapsulation of epitaxial Xenes

In the realm of two-dimensional material frameworks, single-element graphene-like lattices, known as Xenes, pose several issues concerning their environmental stability, with implications for their use in technology transfer to a device layout. In this Discussion, we scrutinize the chemical reactivity of epitaxial silicene, taken as a case in point, in oxygen-rich environments. The oxidation of silicene is detailed by means of a photoemission spectroscopy study upon carefully dosing molecular oxygen under vacuum and subsequent exposure to ambient conditions, showing different chemical reactivity. We therefore propose a sequential Al₂O₃ encapsulation of silicene as a solution to face degradation, proving its effectiveness by virtue of the interaction between silicene and a silver substrate. Based on this method, we generalize our encapsulation scheme to a large number of metal-supported Xenes by taking into account the case of epitaxial phosphorene-on-gold.

Anisotropic Complex Refractive Indices of Atomically Thin Materials: Determination of the Optical Constants of Few-Layer Black Phosphorus

In this work, studies of the optical constants of monolayer transition metal dichalcogenides and few-layer black phosphorus are briefly reviewed, with particular emphasis on the complex dielectric function and refractive index. Specifically, an estimate of the complex index of refraction of phosphorene and few-layer black phosphorus is given. The complex index of refraction of this material was extracted from differential reflectance data reported in the literature by employing a constrained Kramers-Kronig analysis combined with the transfer matrix method. The reflectance contrast of 1-3 layers of black phosphorus on a silicon dioxide/silicon substrate was then calculated using the extracted complex indices of refraction.

Ultrafast charge carrier dynamics in quantum confined 2D perovskite

We studied the charge carrier dynamics in 2D perovskite NBT₂PbI₄ by ultrafast optical pump-THz probe spectroscopy. We observed a few ps long relaxation dynamics that can be ascribed to the band to band carrier recombination, in the absence of any contribution from many-body and trap assisted processes. The transient conductivity spectra show that the polaron dynamics is strongly modulated by the presence of a rich exciton population. The polarization field resulting from the exciton formation acts as the source of a restoring force that localizes polarons. This is revealed by the presence of a negative imaginary conductivity. Our results show that the dynamics of excitons in 2D perovskites at room temperature can be detected by monitoring their effect on the conductivity of the photoinduced polaronic carrier.

Ultrafast THz Probe of Photoinduced Polarons in Lead-Halide Perovskites

We study the nature of photoexcited charge carriers in CsPbBr_{3} nanocrystal thin films by ultrafast optical pump-THz probe spectroscopy. We observe a deviation from a pure Drude dispersion of the THz dielectric response that is ascribed to the polaronic nature of carriers; a transient blueshift of observed phonon frequencies is indicative of the coupling between photogenerated charges and stretching-bending modes of the deformed inorganic sublattice, as confirmed by DFT calculations.

Large polaron evidence in the ultrafast THz response of Lead-Halide Perovskites

We unveil the large polaron fingerprints in the transient THz dielectric response of lead-halide perovskites. We clarify the mechanism underlying the physics of charge transport of full-inorganic lead-halide perovskites by combining ultrafast Thz spectroscopy with DFT calculations.

Anisotropic MoS2 Nanosheets Grown on Self-Organized Nanopatterned Substrates

Manipulating the anisotropy in 2D nanosheets is a promising way to tune or trigger functional properties at the nanoscale. Here, a novel approach is presented to introduce a one-directional anisotropy in MoS₂ nanosheets via chemical vapor deposition (CVD) onto rippled patterns prepared on ion-sputtered SiO₂ /Si substrates. The optoelectronic properties of MoS₂ are dramatically affected by the rippled MoS₂ morphology both at the macro- and the nanoscale. In particular, strongly anisotropic phonon modes are observed depending on the polarization orientation with respect to the ripple axis. Moreover, the rippled morphology induces localization of strain and charge doping at the nanoscale, thus causing substantial redshifts of the phonon mode frequencies and a topography-dependent modulation of the MoS₂ workfunction, respectively. This study paves the way to a controllable tuning of the anisotropy via substrate pattern engineering in CVD-grown 2D nanosheets.

Silicon Nanosheets: Crossover between Multilayer Silicene and Diamond-like Growth Regime

The structural and electronic properties of nanoscale Si epitaxially grown on Ag(111) can be tuned from a multilayer silicene phase, where the constitutive layers incorporate a mixed sp²/sp³ bonding, to other ordinary Si phases, such as amorphous and diamond-like Si. Based on comparative scanning tunneling microscopy and Raman spectroscopy investigations, a key role in determining the nanoscale Si phase is played by the growth temperature of the epitaxial deposition on Ag(111) substrate and the presence or absence of a single-layer silicene as a seed for the successive growth. Furthermore, when integrated into a field-effect transistor device, multilayer silicene exhibits a characteristic ambipolar charge carrier transport behavior that makes it strikingly different from other conventional Si channels and suggestive of a Dirac-like character of the electronic bands of the crystal. These findings spotlight the interest in multilayer silicene as a different nanoscale Si phase for advanced nanotechnology applications such as ultrascaled nanoelectronics and nanomembranes, as well as for fundamental exploration of quantum properties.

Novel near-infrared emission from crystal defects in MoS2 multilayer flakes

The structural defects in two-dimensional transition metal dichalcogenides, including point defects, dislocations and grain boundaries, are scarcely considered regarding their potential to manipulate the electrical and optical properties of this class of materials, notwithstanding the significant advances already made. Indeed, impurities and vacancies may influence the exciton population, create disorder-induced localization, as well as modify the electrical behaviour of the material. Here we report on the experimental evidence, confirmed by ab initio calculations, that sulfur vacancies give rise to a novel near-infrared emission peak around 0.75 eV in exfoliated MoS₂ flakes. In addition, we demonstrate an excess of sulfur vacancies at the flake's edges by means of cathodoluminescence mapping, aberration-corrected transmission electron microscopy imaging and electron energy loss analyses. Moreover, we show that ripplocations, extended line defects peculiar to this material, broaden and redshift the MoS₂ indirect bandgap emission.

Impurities and vacancies are commonly found within the crystalline lattice of transition metal dichalcogenides, however they are usually seen as detrimental for their optical properties. Here, the authors demonstrate that sulfur vacancies in MoS₂ can give rise to a near-infrared emission peak.

Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films

Large-scale integration of MoS2 in electronic devices requires the development of reliable and cost-effective deposition processes, leading to uniform MoS2 layers on a wafer scale. Here we report on the detailed study of the heterogeneous vapor-solid reaction between a pre-deposited molybdenum solid film and sulfur vapor, thus resulting in a controlled growth of MoS2 films onto SiO2/Si substrates with a tunable thickness and cm(2)-scale uniformity. Based on Raman spectroscopy and photoluminescence, we show that the degree of crystallinity in the MoS2 layers is dictated by the deposition temperature and thickness. In particular, the MoS2 structural disorder observed at low temperature (<750 °C) and low thickness (two layers) evolves to a more ordered crystalline structure at high temperature (1000 °C) and high thickness (four layers). From an atomic force microscopy investigation prior to and after sulfurization, this parametrical dependence is associated with the inherent granularity of the MoS2 nanosheet that is inherited by the pristine morphology of the pre-deposited Mo film. This work paves the way to a closer control of the synthesis of wafer-scale and atomically thin MoS2, potentially extendable to other transition metal dichalcogenides and hence targeting massive and high-volume production for electronic device manufacturing.

Nucleation and temperature-driven phase transitions of silicene superstructures on Ag(1 1 1)

Silicene grown on Ag(1 1 1) is characterized by several critical parameters. Among them, the substrate temperature plays a key role in determining the morphology during growth. However, an unexpected important role is also equally played by the post-deposition annealing temperature which determines the self-organization of silicene domains even in the submonolayer coverage regime and consecutive transitions between silicene with different periodicity. These temperature-driven phase transitions can be exploited to select the desired majority silicene phase, thus allowing for the manipulation of silicene properties.

Silicene field-effect transistors operating at room temperature

Free-standing silicene, a silicon analogue of graphene, has a buckled honeycomb lattice and, because of its Dirac bandstructure combined with its sensitive surface, offers the potential for a widely tunable two-dimensional monolayer, where external fields and interface interactions can be exploited to influence fundamental properties such as bandgap and band character for future nanoelectronic devices. The quantum spin Hall effect, chiral superconductivity, giant magnetoresistance and various exotic field-dependent states have been predicted in monolayer silicene. Despite recent progress regarding the epitaxial synthesis of silicene and investigation of its electronic properties, to date there has been no report of experimental silicene devices because of its air stability issue. Here, we report a silicene field-effect transistor, corroborating theoretical expectations regarding its ambipolar Dirac charge transport, with a measured room-temperature mobility of ∼100 cm(2) V(-1) s(-1) attributed to acoustic phonon-limited transport and grain boundary scattering. These results are enabled by a growth-transfer-fabrication process that we have devised--silicene encapsulated delamination with native electrodes. This approach addresses a major challenge for material preservation of silicene during transfer and device fabrication and is applicable to other air-sensitive two-dimensional materials such as germanene and phosphorene. Silicene's allotropic affinity with bulk silicon and its low-temperature synthesis compared with graphene or alternative two-dimensional semiconductors suggest a more direct integration with ubiquitous semiconductor technology.

Two-dimensional Si nanosheets with local hexagonal structure on a MoS(2) surface

The structural and electronic properties of a Si nanosheet (NS) grown onto a MoS2 substrate by means of molecular beam epitaxy are assessed. Epitaxially grown Si is shown to adapt to the trigonal prismatic surface lattice of MoS2 by forming two-dimensional nanodomains. The Si layer structure is distinguished from the underlying MoS2 surface structure. The local electronic properties of the Si nanosheet are dictated by the atomistic arrangement of the layer and unlike the MoS2 hosting substrate they are qualified by a gap-less density of states.

Vibrational characterization of dinaphthylpolyynes: a model system for the study of end-capped sp carbon chains

We perform a systematic investigation of the resonance and vibrational properties of naphthyl-terminated sp carbon chains (dinaphthylpolyynes) by combined multi-wavelength resonant Raman (MWRR) spectroscopy, ultraviolet-visible spectroscopy, and Fourier-transform infrared (FT-IR) spectroscopy, plus ab initio density functional theory (DFT) calculations. We show that the MWWR and FT-IR spectroscopies are particularly suited to identify chains of different lengths and different terminations, respectively. By DFT calculations, we further extend those findings to sp carbon chains end-capped by other organic structures. The present analysis shows that combined MWRR and FT-IR provide a powerful tool to draw a complete picture of chemically stabilized sp carbon chains.

Effect of axial torsion on sp carbon atomic wires

Ab initio calculations within density-functional theory combined with experimental Raman spectra on cluster-beam deposited pure-carbon films provide a consistent picture of sp-carbon chains stabilized by sp;{3} or sp;{2} terminations, the latter being sensitive to torsional strain. This unexplored effect promises many exciting applications since it allows one to modify the conductive states near the Fermi level and to switch on and off the on-chain pi-electron magnetism.