MO278: Immunolandscaping of Rhabdomyolysis-Induced Acute Kidney Injury

BACKGROUND AND AIMS

Acute kidney injury (AKI) accounts for 13.3 million cases per year worldwide and further responsible for 1.7 million deaths per year [1]. Increasing incidence of AKI, progression toward CKD or end-stage renal disease (ESRD), affect on long term health, high mortality, morbidity and high costs are all accountable for the need to analyze AKI at a closer level [2].

Rhabdomyolysis (RM) accounting for 10% of AKI cases is due to damage of the skeletal muscle causing a release of muscle cell contents like myoglobin and toxins into the bloodstream leading to AKI, renal failure and possibly death. RM-induced AKI (RIAKI) occurs due to a variety of causes like fall risk, exposure to drugs, infections, muscle hypoxia, infections, body-temperature changes and metabolic and electrolyte disorders [3].

The immune system has been reported to play a role in the pathogenesis of AKI through inflammatory pathways. Macrophages are known to be involved in AKI to CKD transition [4]. Macrophages play an important role in the pathogenesis of RIAKI. While macrophage subtypes (inflammatory type) have been reported to drive RIAKI lesions and prognosis [5], the role of the other immune cells needs to be explored.

The aim of this study was to analyze the recruitment of the whole immune system during RIAKI through single-cell RNA sequencing.

METHOD

Two month old C57BL/6J male mice were used for this study. Mice were administered saline (control) or glycerol i.m (7.5 mL/kg 50% glycerol diluted in saline) for induction of RM. Mouse tail vein blood was collected at 6, 24 and 48 h and serum was obtained after centrifugation (5 min at 2000 rpm). Biochemical analysis tests were used to evaluate RM intensity (creatinine phosphokinase, CPK) and renal function (blood urea nitrogen, BUN) using a Pentra 400 analyzer.

To analyze the immune cell recruitment in kidney, kidneys from control and glycerol treated mice were decapsulated, minced and incubated with collagenase and DNase. The dissociated cells were then incubated in red cell lysis buffer and passed through a 40 µm filter. The dissociated cells were further incubated with CD45 antibodies and a viability marker. Kidney CD45 live cells were sorted using BD Influx cell sorter. Preparation of single cell libraries was done and single-cell RNA sequencing was performed according to 10× Genomics protocol.

RESULTS

Eight clusters (macrophages, monocytes, endothelial cells, neutrophils, natural killer T cells, B cells, T cells and dendritic cells) were revealed after single-cell RNA sequencing of CD45+ renal cells. Recruitment of macrophages, monocytes and neutrophils were revealed to be modified by RIAKI. As expected, NF-kB signaling pathway was the major pathway upregulated in multiple clusters. Pathway analysis in T cell cluster showcased T cell selection and differentiation and T cell receptor signaling pathway. AA467197 (a long non-coding RNA which has been reported in renal ischemia–reperfusion) was upregulated through differential expression analysis in multiple clusters. Macrophage subclustering revealed a high macrophage diversity in the seven macrophage subclusters that shared markers for macrophage subtypes (M1, M2) and pro-inflammatory markers. KLf9 was upregulated in cluster 7, which has been reported to be a stress-responsive gene associated having pro-inflammatory effect. NF-kB and IL-2 STAT5 signaling pathways were the major pathways upregulated in multiple clusters. Drug repositioning studies with connectivity map showcased SRC inhibitions as potent pharmacological intervention strategy.

CONCLUSION

This study revealed the immune landscaping and pathways associated in RIAKI. Single-cell approach illustrated macrophages diversity in pathological context and suggested candidates for further therapeutic approaches.

Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

A multi-microscopy investigation of a GaN tunnel junction (TJ) grown on an InGaN-based light emitting diode (LED) has been performed. The TJ consists of a heavily Ge-doped n-type GaN layer grown by ammonia-based molecular-beam epitaxy on a heavily Mg-doped p-type GaN thin layer, grown by metalorganic vapor phase epitaxy. A correlation of atom probe tomography, electron holography and secondary ion mass spectrometry has been performed in order to investigate the nm-scale distribution of both Mg and Ge at the TJ. Experimental results reveal that Mg segregates at the TJ interface, and diffuses into the Ge-doped layer. As a result, the dopant concentration and distribution differ significantly from the nominal values. Despite this, electron holography reveals a TJ depletion width of ∼7 nm, in agreement with band diagram simulations using the experimentally determined dopant distribution.

Evidence of 2D-3D transition during the first stages of GaN growth on AlN

In order to identify the strain relaxation mechanism, Molecular Beam Epitaxy of wurtzite GaN on AlN was monitored in situ using Reflection High Energy Electron Diffraction (RHEED). In the substrate temperature range between 620°C and 720°C, a Stransky-Krastanov (SK) transition was evidenced, resulting in a 2D-3D transition after completion of 2 monolayers, with subsequent coalescence of 3D islands, eventually resulting in a smooth surface. Quantitative analysis of the RHEED pattern allowed us to determine that island formation is associated with elastic relaxation. After island coalescence, a progressive plastic relaxation is observed. The size and density of 3D islands was varied as a function of the growth parameters. AFM experiments revealed that the size of the GaN islands, about 8 nm large and 2 nm high, was small enough to expect quantum effects. It was found that capping of the islands by AlN resulted in a smooth surface after deposition of a few monolayers allowing us to grow a »superlattice» of islands by periodically repeating the process.

Compared growth mechanisms of Zn-polar ZnO nanowires on O-polar ZnO and on sapphire

Controlling the growth of zinc oxide nanowires is necessary to optimize the performance of nanowire-based devices such as photovoltaic solar cells, nano-generators, or light-emitting diodes. With this in mind, we investigate the nucleation and growth mechanisms of ZnO nanowires grown by metalorganic vapor phase epitaxy either on O-polar ZnO or on sapphire substrates. Whatever the substrate, ZnO nanowires are Zn-polar, as demonstrated by convergent beam electron diffraction. For growth on O-polar ZnO substrate, the nanowires are found to sit on O-polar pyramids. As growth proceeds, the inversion domain boundary moves up in order to remain at the top of the O-polar pyramids. For growth on sapphire substrates, the nanowires may also originate from the sapphire/ZnO interface. The presence of atomic steps and the non-polar character of sapphire could be the cause of the Zn-polar crystal nucleation on sapphire, whereas it is proposed that the segregation of aluminum impurities could account for the nucleation of inverted domains for growth on O-polar ZnO.

Core-shell multi-quantum wells in ZnO/ZnMgO nanowires with high optical efficiency at room temperature

Nanowire-based light-emitting devices require multi-quantum well heterostructures with high room temperature optical efficiencies. We demonstrate that such efficiencies can be attained through the use of ZnO/Zn((1-x))Mg(x)O core-shell quantum well heterostructures grown by metal organic vapor phase epitaxy. Varying the barrier Mg concentration from x = 0.15 to 0.3 leads to the formation of misfit induced dislocations in the multi-quantum wells. Correlatively, temperature dependent photoluminescence reveals that the radial well luminescence intensity decreases much less rapidly with increasing temperature for the lower Mg concentration. Indeed, about 54% of the 10 K intensity is retained at room temperature with x = 0.15, against 1% with x = 0.30. These results open the way to the realization of high optical efficiency nanowire-based light-emitting diodes.

Structural and Optical Characterization of High-Quality Cubic GaN Epilayers Grown on GaAs and 3C-SiC Substrates by Gas-Source MBE Using RHEED In Situ Monitoring

By monitoring RHEED reconstruction patterns during gas source molecular beam epitaxy growth, the optimization of the growth for cubic GaN was carried out successfully. Cubic GaN epilayer having a X-ray diffraction width of 16min and a low temperature photoluminescence emission width of 19meV was obtained on a 3C-SiC substrate by adjusting the effective III/V ratio in-situ during the growth, which can be inferred from the surface reconstruction transitions. It was found that the surface reconstructions of cubic GaN surfaces are good indices for the optimization of growth parameters.

Surface Reconstructions and III-V Stoichiometry: The Case of Cubic and Hexagonal GaN

Surface reconstructions for MBE grown GaN are identified. Different cases are considered according to the type of substrate or crystal symmetry and surface phase diagrams are obtained. Through different examples, it is shown how growth monitoring can be efficiently achieved through the use of surface reconstructions. Finally, from the observation that a residual arsenic overpressure in the MBE chamber changes the surface reconstructions of cubic (001) GaN grown onto 3C-SiC (001) substrates to that commonly observed for GaN growth on (001) GaAs, it is proposed that arsenic might be a surfactant for nitride growth.

A generic approach for vertical integration of nanowires

We report on the collective integration technology of vertically aligned nanowires (NWs). Si and ZnO NWs have been used in order to develop a generic technological process. Both mineral and organic planarizations of the as-grown nanowires have been achieved. Chemical vapour deposition (CVD) oxides, spin on glass (SOG), and polymer have been investigated as filling materials. Polishing and/or etching of the composite structures have been set up so as to obtain a suitable morphology for the top and bottom electrical contacts. Electrical and optical characterizations of the integrated NWs have been performed. Contacts ohmicity has been demonstrated and specific contact resistances have been reported. The photoconducting properties of polymer-integrated ZnO NWs have also been investigated in the UV-visible range through collective electrical contacts. A small increase of the resistivity in the ZnO NWs under sub-bandgap illumination has been observed and discussed. A comparison of the photoluminescence (PL) spectra at 300 K of the as-grown and SOG-integrated ZnO nanowires has shown no significant impact of the integration process on the crystal quality of the NWs.