1
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Liu WL, Zhang X, Nie SM, Liu ZT, Sun XY, Wang HY, Ding JY, Jiang Q, Sun L, Xue FH, Huang Z, Su H, Yang YC, Jiang ZC, Lu XL, Yuan J, Cho S, Liu JS, Liu ZH, Ye M, Zhang SL, Weng HM, Liu Z, Guo YF, Wang ZJ, Shen DW. Spontaneous Ferromagnetism Induced Topological Transition in EuB_{6}. Phys Rev Lett 2022; 129:166402. [PMID: 36306743 DOI: 10.1103/physrevlett.129.166402] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2021] [Revised: 08/09/2022] [Accepted: 09/12/2022] [Indexed: 06/16/2023]
Abstract
The interplay between various symmetries and electronic bands topology is one of the core issues for topological quantum materials. Spontaneous magnetism, which leads to the breaking of time-reversal symmetry, has been proven to be a powerful approach to trigger various exotic topological phases. In this Letter, utilizing the combination of angle-resolved photoemission spectroscopy, magneto-optical Kerr effect microscopy, and first-principles calculations, we present the direct evidence on the realization of the long-sought spontaneous ferromagnetism induced topological transition in soft ferromagnetic EuB_{6}. Explicitly, we reveal the topological transition is from Z_{2}=1 topological insulator in paramagnetic state to χ=1 magnetic topological semimetal in low temperature ferromagnetic state. Our results demonstrate that the simple band structure near the Fermi level and rich topological phases make EuB_{6} an ideal platform to study the topological phase physics.
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Affiliation(s)
- W L Liu
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - X Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - S M Nie
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA
| | - Z T Liu
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - X Y Sun
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - H Y Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - J Y Ding
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Q Jiang
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - L Sun
- School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - F H Xue
- School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Z Huang
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - H Su
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Y C Yang
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Z C Jiang
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - X L Lu
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - J Yuan
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Soohyun Cho
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - J S Liu
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Z H Liu
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - M Ye
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - S L Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - H M Weng
- Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Z Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Y F Guo
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Z J Wang
- Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - D W Shen
- Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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2
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Zhang TT, Miao H, Wang Q, Lin JQ, Cao Y, Fabbris G, Said AH, Liu X, Lei HC, Fang Z, Weng HM, Dean MPM. Phononic Helical Nodal Lines with PT Protection in MoB_{2}. Phys Rev Lett 2019; 123:245302. [PMID: 31922848 DOI: 10.1103/physrevlett.123.245302] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2019] [Indexed: 06/10/2023]
Abstract
While condensed matter systems host both fermionic and bosonic quasiparticles, reliably predicting and empirically verifying topological states is only mature for Fermionic electronic structures, leaving topological Bosonic excitations sporadically explored. This is unfortunate, as Bosonic systems such as phonons offer the opportunity to assess spinless band structures where nodal lines can be realized without invoking special additional symetries to protect against spin-orbit coupling. Here we combine first-principles calculations and meV-resolution inelastic x-ray scattering to demonstrate the first realization of parity-time reversal symmetry protected helical nodal lines in the phonon spectrum of MoB_{2}. This structure is unique to phononic systems as the spin-orbit coupling present in electronic systems tends to lift the degeneracy away from high-symmetry locations. Our study establishes a protocol to accurately identify topological Bosonic excitations, opening a new route to explore exotic topological states in crystalline materials.
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Affiliation(s)
- T T Zhang
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Department of Physics, Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo 152-8551, Japan
- Tokodai Institute for Element Strategy, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama, Kanagawa 226-8503, Japan
| | - H Miao
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Q Wang
- Department of Physics and Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-devices, Renmin University of China, Beijing, China
| | - J Q Lin
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Y Cao
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - G Fabbris
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - A H Said
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - X Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - H C Lei
- Department of Physics and Beijing Key Laboratory of Opto-Electronic Functional Materials and Micro-devices, Renmin University of China, Beijing, China
| | - Z Fang
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - H M Weng
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - M P M Dean
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
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3
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Miao H, Zhang TT, Wang L, Meyers D, Said AH, Wang YL, Shi YG, Weng HM, Fang Z, Dean MPM. Observation of Double Weyl Phonons in Parity-Breaking FeSi. Phys Rev Lett 2018; 121:035302. [PMID: 30085785 DOI: 10.1103/physrevlett.121.035302] [Citation(s) in RCA: 28] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2018] [Indexed: 06/08/2023]
Abstract
Condensed matter systems have now become a fertile ground to discover emerging topological quasiparticles with symmetry protected modes. While many studies have focused on fermionic excitations, the same conceptual framework can also be applied to bosons yielding new types of topological states. Motivated by Zhang et al.'s recent theoretical prediction of double Weyl phonons in transition metal monosilicides [Phys. Rev. Lett. 120, 016401 (2018)PRLTAO0031-900710.1103/PhysRevLett.120.016401], we directly measure the phonon dispersion in parity-breaking FeSi using inelastic x-ray scattering. By comparing the experimental data with theoretical calculations, we make the first observation of double Weyl points in FeSi, which will be an ideal material to explore emerging bosonic excitations and its topologically nontrivial properties.
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Affiliation(s)
- H Miao
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - T T Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - L Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - D Meyers
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - A H Said
- Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
| | - Y L Wang
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
| | - Y G Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - H M Weng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100190, China
| | - Z Fang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100190, China
| | - M P M Dean
- Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973, USA
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4
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Rong LY, Ma JZ, Nie SM, Lin ZP, Li ZL, Fu BB, Kong LY, Zhang XZ, Huang YB, Weng HM, Qian T, Ding H, Tai RZ. Electronic structure of SrSn 2As 2 near the topological critical point. Sci Rep 2017; 7:6133. [PMID: 28733663 PMCID: PMC5522476 DOI: 10.1038/s41598-017-05386-x] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/05/2017] [Accepted: 05/30/2017] [Indexed: 11/09/2022] Open
Abstract
Topological materials with exotic quantum properties are promising candidates for quantum spin electronics. Different classes of topological materials, including Weyl semimetal, topological superconductor, topological insulator and Axion insulator, etc., can be connected to each other via quantum phase transition. For example, it is believed that a trivial band insulator can be twisted into topological phase by increasing spin-orbital coupling or changing the parameters of crystal lattice. With the results of LDA calculation and measurement by angle-resolved photoemission spectroscopy (ARPES), we demonstrate in this work that the electronic structure of SrSn2As2 single crystal has the texture of band inversion near the critical point. The results indicate the possibility of realizing topological quantum phase transition in SrSn2As2 single crystal and obtaining different exotic quantum states.
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Affiliation(s)
- L-Y Rong
- Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, China.,University of Chinese Academy of Sciences, Beijing, China
| | - J-Z Ma
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China. .,University of Chinese Academy of Sciences, Beijing, China.
| | - S-M Nie
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, China
| | - Z-P Lin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, China
| | - Z-L Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, China
| | - B-B Fu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, China
| | - L-Y Kong
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, China
| | - X-Z Zhang
- Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, China
| | - Y-B Huang
- Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, China
| | - H-M Weng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - T Qian
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - H Ding
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, China
| | - R-Z Tai
- Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, China.
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5
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Liu Y, Long YJ, Zhao LX, Nie SM, Zhang SJ, Weng YX, Jin ML, Li WM, Liu QQ, Long YW, Yu RC, Gu CZ, Sun F, Yang WG, Mao HK, Feng XL, Li Q, Zheng WT, Weng HM, Dai X, Fang Z, Chen GF, Jin CQ. Superconductivity in HfTe 5 across weak to strong topological insulator transition induced via pressures. Sci Rep 2017; 7:44367. [PMID: 28300156 PMCID: PMC5353664 DOI: 10.1038/srep44367] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/03/2016] [Accepted: 02/07/2017] [Indexed: 11/17/2022] Open
Abstract
Recently, theoretical studies show that layered HfTe5 is at the boundary of weak & strong topological insulator (TI) and might crossover to a Dirac semimetal state by changing lattice parameters. The topological properties of 3D stacked HfTe5 are expected hence to be sensitive to pressures tuning. Here, we report pressure induced phase evolution in both electronic & crystal structures for HfTe5 with a culmination of pressure induced superconductivity. Our experiments indicated that the temperature for anomaly resistance peak (Tp) due to Lifshitz transition decreases first before climbs up to a maximum with pressure while the Tp minimum corresponds to the transition from a weak TI to strong TI. The HfTe5 crystal becomes superconductive above ~5.5 GPa where the Tp reaches maximum. The highest superconducting transition temperature (Tc) around 5 K was achieved at 20 GPa. Crystal structure studies indicate that HfTe5 transforms from a Cmcm phase across a monoclinic C2/m phase then to a P-1 phase with increasing pressure. Based on transport, structure studies a comprehensive phase diagram of HfTe5 is constructed as function of pressure. The work provides valuable experimental insights into the evolution on how to proceed from a weak TI precursor across a strong TI to superconductors.
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Affiliation(s)
- Y Liu
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Y J Long
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - L X Zhao
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - S M Nie
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - S J Zhang
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Y X Weng
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - M L Jin
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - W M Li
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Q Q Liu
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - Y W Long
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - R C Yu
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - C Z Gu
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - F Sun
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China
| | - W G Yang
- Center for High Pressure Science &Technology Advanced Research, Shanghai, 201203, China
| | - H K Mao
- Center for High Pressure Science &Technology Advanced Research, Shanghai, 201203, China
| | - X L Feng
- Department of Materials Science, Jilin University, Changchun 130012, China
| | - Q Li
- Department of Materials Science, Jilin University, Changchun 130012, China
| | - W T Zheng
- Department of Materials Science, Jilin University, Changchun 130012, China
| | - H M Weng
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.,Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - X Dai
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.,Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - Z Fang
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.,Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - G F Chen
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.,Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - C Q Jin
- Institute of Physics &School of Physics of University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China.,Collaborative Innovation Center of Quantum Matter, Beijing, China
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6
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Zhang P, Ma JZ, Ishida Y, Zhao LX, Xu QN, Lv BQ, Yaji K, Chen GF, Weng HM, Dai X, Fang Z, Chen XQ, Fu L, Qian T, Ding H, Shin S. Topologically Entangled Rashba-Split Shockley States on the Surface of Grey Arsenic. Phys Rev Lett 2017; 118:046802. [PMID: 28186797 DOI: 10.1103/physrevlett.118.046802] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2016] [Indexed: 06/06/2023]
Abstract
We discover a pair of spin-polarized surface bands on the (111) face of grey arsenic by using angle-resolved photoemission spectroscopy (ARPES). In the occupied side, the pair resembles typical nearly-free-electron Shockley states observed on noble-metal surfaces. However, pump-probe ARPES reveals that the spin-polarized pair traverses the bulk band gap and that the crossing of the pair at Γ[over ¯] is topologically unavoidable. First-principles calculations well reproduce the bands and their nontrivial topology; the calculations also support that the surface states are of Shockley type because they arise from a band inversion caused by crystal field. The results provide compelling evidence that topological Shockley states are realized on As(111).
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Affiliation(s)
- Peng Zhang
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - J-Z Ma
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Y Ishida
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - L-X Zhao
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Q-N Xu
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - B-Q Lv
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - K Yaji
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - G-F Chen
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - H-M Weng
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - X Dai
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - Z Fang
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - X-Q Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, Shenyang 110016, China
| | - L Fu
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
| | - T Qian
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - H Ding
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - S Shin
- Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan
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7
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Zeng LK, Lou R, Wu DS, Xu QN, Guo PJ, Kong LY, Zhong YG, Ma JZ, Fu BB, Richard P, Wang P, Liu GT, Lu L, Huang YB, Fang C, Sun SS, Wang Q, Wang L, Shi YG, Weng HM, Lei HC, Liu K, Wang SC, Qian T, Luo JL, Ding H. Compensated Semimetal LaSb with Unsaturated Magnetoresistance. Phys Rev Lett 2016; 117:127204. [PMID: 27689296 DOI: 10.1103/physrevlett.117.127204] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2016] [Indexed: 06/06/2023]
Abstract
By combining angle-resolved photoemission spectroscopy and quantum oscillation measurements, we performed a comprehensive investigation on the electronic structure of LaSb, which exhibits near-quadratic extremely large magnetoresistance (XMR) without any sign of saturation at magnetic fields as high as 40 T. We clearly resolve one spherical and one intersecting-ellipsoidal hole Fermi surfaces (FSs) at the Brillouin zone (BZ) center Γ and one ellipsoidal electron FS at the BZ boundary X. The hole and electron carriers calculated from the enclosed FS volumes are perfectly compensated, and the carrier compensation is unaffected by temperature. We further reveal that LaSb is topologically trivial but shares many similarities with the Weyl semimetal TaAs family in the bulk electronic structure. Based on these results, we have examined the mechanisms that have been proposed so far to explain the near-quadratic XMR in semimetals.
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Affiliation(s)
- L-K Zeng
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - R Lou
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - D-S Wu
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Q N Xu
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - P-J Guo
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - L-Y Kong
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Y-G Zhong
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - J-Z Ma
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - B-B Fu
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - P Richard
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - P Wang
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - G T Liu
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - L Lu
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - Y-B Huang
- Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201204, China
| | - C Fang
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - S-S Sun
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Q Wang
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - L Wang
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Y-G Shi
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - H M Weng
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - H-C Lei
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - K Liu
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - S-C Wang
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - T Qian
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - J-L Luo
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - H Ding
- Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
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8
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Lv BQ, Muff S, Qian T, Song ZD, Nie SM, Xu N, Richard P, Matt CE, Plumb NC, Zhao LX, Chen GF, Fang Z, Dai X, Dil JH, Mesot J, Shi M, Weng HM, Ding H. Observation of Fermi-Arc Spin Texture in TaAs. Phys Rev Lett 2015; 115:217601. [PMID: 26636872 DOI: 10.1103/physrevlett.115.217601] [Citation(s) in RCA: 25] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2015] [Indexed: 06/05/2023]
Abstract
We have investigated the spin texture of surface Fermi arcs in the recently discovered Weyl semimetal TaAs using spin- and angle-resolved photoemission spectroscopy. The experimental results demonstrate that the Fermi arcs are spin polarized. The measured spin texture fulfills the requirement of mirror and time-reversal symmetries and is well reproduced by our first-principles calculations, which gives strong evidence for the topologically nontrivial Weyl semimetal state in TaAs. The consistency between the experimental and calculated results further confirms the distribution of chirality of the Weyl nodes determined by first-principles calculations.
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Affiliation(s)
- B Q Lv
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
| | - S Muff
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
- Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - T Qian
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Z D Song
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - S M Nie
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - N Xu
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
| | - P Richard
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - C E Matt
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
| | - N C Plumb
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
| | - L X Zhao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - G F Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - Z Fang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - X Dai
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - J H Dil
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
- Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - J Mesot
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
- Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
- Laboratory for Solid State Physics, ETH Zürich, CH-8093 Zürich, Switzerland
| | - M Shi
- Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
| | - H M Weng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - H Ding
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
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9
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Xu N, Biswas PK, Dil JH, Dhaka RS, Landolt G, Muff S, Matt CE, Shi X, Plumb NC, Radović M, Pomjakushina E, Conder K, Amato A, Borisenko SV, Yu R, Weng HM, Fang Z, Dai X, Mesot J, Ding H, Shi M. Direct observation of the spin texture in SmB6 as evidence of the topological Kondo insulator. Nat Commun 2014; 5:4566. [PMID: 25074332 DOI: 10.1038/ncomms5566] [Citation(s) in RCA: 175] [Impact Index Per Article: 17.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/22/2014] [Accepted: 07/01/2014] [Indexed: 11/09/2022] Open
Abstract
Topological Kondo insulators have been proposed as a new class of topological insulators in which non-trivial surface states reside in the bulk Kondo band gap at low temperature due to strong spin-orbit coupling. In contrast to other three-dimensional topological insulators, a topological Kondo insulator is truly bulk insulating. Furthermore, strong electron correlations are present in the system, which may interact with the novel topological phase. By applying spin- and angle-resolved photoemission spectroscopy, here we show that the surface states of SmB6 are spin polarized. The spin is locked to the crystal momentum, fulfilling time reversal and crystal symmetries. Our results provide strong evidence that SmB6 can host topological surface states in a bulk insulating gap stemming from the Kondo effect, which can serve as an ideal platform for investigating of the interplay between novel topological quantum states with emergent effects and competing orders induced by strongly correlated electrons.
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Affiliation(s)
- N Xu
- Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - P K Biswas
- Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - J H Dil
- 1] Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen, Switzerland [2] Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - R S Dhaka
- 1] Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen, Switzerland [2] Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - G Landolt
- 1] Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen, Switzerland [2] Physik-Institut, Universität Zürich, Winterthurerstrauss 190, CH-8057 Zürich, Switzerland
| | - S Muff
- 1] Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen, Switzerland [2] Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
| | - C E Matt
- 1] Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen, Switzerland [2] Laboratory for Solid State Physics, ETH Zürich, CH-8093, Zürich, Switzerland
| | - X Shi
- 1] Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen, Switzerland [2] Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - N C Plumb
- Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - M Radović
- 1] Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen, Switzerland [2] SwissFEL, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - E Pomjakushina
- Laboratory for Developments and Methods, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - K Conder
- Laboratory for Developments and Methods, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - A Amato
- Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - S V Borisenko
- Institute for Solid State Research, IFW Dresden, PO Box 270116, D-01171 Dresden, Germany
| | - R Yu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - H-M Weng
- 1] Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [2] Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - Z Fang
- 1] Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [2] Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - X Dai
- 1] Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [2] Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - J Mesot
- 1] Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen, Switzerland [2] Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland [3] Laboratory for Solid State Physics, ETH Zürich, CH-8093, Zürich, Switzerland
| | - H Ding
- 1] Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [2] Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
| | - M Shi
- Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
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10
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Liu ZK, Jiang J, Zhou B, Wang ZJ, Zhang Y, Weng HM, Prabhakaran D, Mo SK, Peng H, Dudin P, Kim T, Hoesch M, Fang Z, Dai X, Shen ZX, Feng DL, Hussain Z, Chen YL. A stable three-dimensional topological Dirac semimetal Cd3As2. Nat Mater 2014; 13:677-81. [PMID: 24859642 DOI: 10.1038/nmat3990] [Citation(s) in RCA: 327] [Impact Index Per Article: 32.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2013] [Accepted: 04/24/2013] [Indexed: 05/26/2023]
Abstract
Three-dimensional (3D) topological Dirac semimetals (TDSs) are a recently proposed state of quantum matter that have attracted increasing attention in physics and materials science. A 3D TDS is not only a bulk analogue of graphene; it also exhibits non-trivial topology in its electronic structure that shares similarities with topological insulators. Moreover, a TDS can potentially be driven into other exotic phases (such as Weyl semimetals, axion insulators and topological superconductors), making it a unique parent compound for the study of these states and the phase transitions between them. Here, by performing angle-resolved photoemission spectroscopy, we directly observe a pair of 3D Dirac fermions in Cd3As2, proving that it is a model 3D TDS. Compared with other 3D TDSs, for example, β-cristobalite BiO2 (ref. 3) and Na3Bi (refs 4, 5), Cd3As2 is stable and has much higher Fermi velocities. Furthermore, by in situ doping we have been able to tune its Fermi energy, making it a flexible platform for exploring exotic physical phenomena.
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Affiliation(s)
- Z K Liu
- 1] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA [2]
| | - J Jiang
- 1] Physics Department, Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, UK [2] State Key Laboratory of Surface Physics, Department of Physics, and Advanced Materials Laboratory, Fudan University, Shanghai 200433, China [3]
| | - B Zhou
- 1] Physics Department, Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, UK [2] Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA [3]
| | - Z J Wang
- 1] Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China [2]
| | - Y Zhang
- 1] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA [2] Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - H M Weng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - D Prabhakaran
- Physics Department, Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, UK
| | - S-K Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - H Peng
- Physics Department, Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, UK
| | - P Dudin
- Diamond Light Source, Didcot OX11 0DE, UK
| | - T Kim
- Diamond Light Source, Didcot OX11 0DE, UK
| | - M Hoesch
- Diamond Light Source, Didcot OX11 0DE, UK
| | - Z Fang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - X Dai
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Z X Shen
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA
| | - D L Feng
- State Key Laboratory of Surface Physics, Department of Physics, and Advanced Materials Laboratory, Fudan University, Shanghai 200433, China
| | - Z Hussain
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Y L Chen
- 1] Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA [2] Physics Department, Clarendon Laboratory, University of Oxford, Parks Road, Oxford OX1 3PU, UK [3] Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA [4] Diamond Light Source, Didcot OX11 0DE, UK
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11
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Zhu J, Zhang JL, Kong PP, Zhang SJ, Yu XH, Zhu JL, Liu QQ, Li X, Yu RC, Ahuja R, Yang WG, Shen GY, Mao HK, Weng HM, Dai X, Fang Z, Zhao YS, Jin CQ. Superconductivity in topological insulator Sb2Te3 induced by pressure. Sci Rep 2014; 3:2016. [PMID: 23783511 PMCID: PMC3687246 DOI: 10.1038/srep02016] [Citation(s) in RCA: 117] [Impact Index Per Article: 11.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2013] [Accepted: 05/17/2013] [Indexed: 11/09/2022] Open
Abstract
Topological superconductivity is one of most fascinating properties of topological quantum matters that was theoretically proposed and can support Majorana Fermions at the edge state. Superconductivity was previously realized in a Cu-intercalated Bi2Se3 topological compound or a Bi2Te3 topological compound at high pressure. Here we report the discovery of superconductivity in the topological compound Sb2Te3 when pressure was applied. The crystal structure analysis results reveal that superconductivity at a low-pressure range occurs at the ambient phase. The Hall coefficient measurements indicate the change of p-type carriers at a low-pressure range within the ambient phase, into n-type at higher pressures, showing intimate relation to superconducting transition temperature. The first principle calculations based on experimental measurements of the crystal lattice show that Sb2Te3 retains its Dirac surface states within the low-pressure ambient phase where superconductivity was observed, which indicates a strong relationship between superconductivity and topology nature.
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Affiliation(s)
- J Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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12
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Liu ZK, Zhou B, Zhang Y, Wang ZJ, Weng HM, Prabhakaran D, Mo SK, Shen ZX, Fang Z, Dai X, Hussain Z, Chen YL. Discovery of a three-dimensional topological Dirac semimetal, Na3Bi. Science 2014; 343:864-7. [PMID: 24436183 DOI: 10.1126/science.1245085] [Citation(s) in RCA: 528] [Impact Index Per Article: 52.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
Three-dimensional (3D) topological Dirac semimetals (TDSs) represent an unusual state of quantum matter that can be viewed as "3D graphene." In contrast to 2D Dirac fermions in graphene or on the surface of 3D topological insulators, TDSs possess 3D Dirac fermions in the bulk. By investigating the electronic structure of Na3Bi with angle-resolved photoemission spectroscopy, we detected 3D Dirac fermions with linear dispersions along all momentum directions. Furthermore, we demonstrated the robustness of 3D Dirac fermions in Na3Bi against in situ surface doping. Our results establish Na3Bi as a model system for 3D TDSs, which can serve as an ideal platform for the systematic study of quantum phase transitions between rich topological quantum states.
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Affiliation(s)
- Z K Liu
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USA
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13
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Zou X, Chan YC, Webb DP, Lam YW, Hu YF, Beling CD, Fung S, Weng HM. Photoinduced dehydrogenation of defects in undoped a-si:H using positron annihilation spectroscopy. Phys Rev Lett 2000; 84:769-772. [PMID: 11017368 DOI: 10.1103/physrevlett.84.769] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/1998] [Indexed: 05/23/2023]
Abstract
We report changes in variable-energy positron annihilation spectroscopy measurements on undoped hydrogenated amorphous silicon films after light soaking. The change, seen predominantly in the high momentum band of the annihilation radiation, is not reversed by thermal annealing. We suggest, following recent models of the Staebler-Wronski effect, that light exposure induces hydrogen trapped in vacancylike defects to become mobile in the Si network. The observations place constraints on models of hydrogen motion fitting macroscopic Staebler-Wronski effect kinetics and may help to achieve a definitive description of metastability in a-Si:H.
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Affiliation(s)
- X Zou
- Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
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14
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Lo I, Kao MJ, Hsu WC, Kuo KK, Chang YC, Weng HM, Chiang JC, Tsay SF. Photoinduced electron coupling in delta -doped GaAs/In0.18Ga0.82As quantum wells. Phys Rev B Condens Matter 1996; 54:4774-4779. [PMID: 9986439 DOI: 10.1103/physrevb.54.4774] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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