Near-zero stiffness accelerometer with buckling of tunable electrothermal microbeams

Pre-shaped microbeams, curved or inclined, are widely used in MEMS for their interesting stiffness properties. These mechanisms allow a wide range of positive and negative stiffness tuning in their direction of motion. A mechanism of pre-shaped beams with opposite curvature, connected in a parallel configuration, can be electrothermally tuned to reach a near-zero or negative stiffness behavior at the as-fabricated position. The simple structure helps incorporate the tunable spring mechanism in different designs for accelerometers, even with different transduction technologies. The sensitivity of the accelerometer can be considerably increased or tuned for different applications by electrothermally changing the stiffness of the spring mechanism. Opposite inclined beams are implemented in a capacitive micromachined accelerometer. The measurements on fabricated prototypes showed more than 55 times gain in sensitivity compared to their initial sensitivity. The experiments showed promising results in enhancing the resolution of acceleration sensing and the potential to reach unprecedent performance in micromachined accelerometers.

An interconnect-free micro-electromechanical 7-bit arithmetic device for multi-operand programmable computing

Computational power density and interconnection between transistors have grown to be the dominant challenges for the continued scaling of complementary metal-oxide-semiconductor (CMOS) technology due to limited integration density and computing power. Herein, we designed a novel, hardware-efficient, interconnect-free microelectromechanical 7:3 compressor using three microbeam resonators. Each resonator is configured with seven equal-weighted inputs and multiple driven frequencies, thus defining the transformation rules for transmitting resonance frequency to binary outputs, performing summation operations, and displaying outputs in compact binary format. The device achieves low power consumption and excellent switching reliability even after 3 × 10³ repeated cycles. These performance improvements, including enhanced computational power capacity and hardware efficiency, are paramount for moderately downscaling devices. Finally, our proposed paradigm shift for circuit design provides an attractive alternative to traditional electronic digital computing and paves the way for multioperand programmable computing based on electromechanical systems.

Hybrid 2D/CMOS microchips for memristive applications

Exploiting the excellent electronic properties of two-dimensional (2D) materials to fabricate advanced electronic circuits is a major goal for the semiconductors industry^1-2. However, most studies in this field have been limited to the fabrication and characterization of isolated large (>1µm²) devices on unfunctional SiO₂/Si substrates. Some studies integrated monolayer graphene on silicon microchips as large-area (>500µm²) interconnection³ and as channel of large transistors (~16.5µm²)^4-5, but in all cases the integration density was low, no computation was demonstrated, and manipulating monolayer 2D materials was challenging because native pinholes and cracks during transfer increase variability and reduce yield. Here we present the fabrication of high-integration-density 2D/CMOS hybrid microchips for memristive applications - CMOS stands for complementary metal oxide semiconductor. We transfer a sheet of multilayer hexagonal boron nitride (h-BN) onto the back-end-of-line (BEOL) interconnections of silicon microchips containing CMOS transistors of the 180nm node, and finalize the circuits by patterning the top electrodes and interconnections. The CMOS transistors provide outstanding control over the currents across the h-BN memristors, which allows us to achieve endurances of ~5 million cycles in memristors as small as ~0.053µm². We demonstrate in-memory computation by constructing logic gates, and measure spike-timing dependent plasticity (STDP) signals that are suitable for the implementation of spiking neural networks (SNN). The high performance and the relatively-high technology readiness level achieved represent a significant advance towards the integration of 2D materials in microelectronic products and memristive applications.

Surface Passivation of Niobium Superconducting Quantum Circuits Using Self-Assembled Monolayers

Superconducting coplanar waveguide (CPW) microwave resonators in quantum circuits are the best components for reading and changing the state of artificial atoms because of their excellent coupling to quantum systems. This coupling forms the basis of the developing circuit quantum electrodynamic architecture. In quantum processors, oscillators are used to store and transmit quantum information using microwave-frequency wave packets. However, the presence of amorphous thin-film defects is deleterious and can result in an irrevocable loss of coherent information with uncontrolled degrees of freedom. Although there has been extensive research into techniques to reduce the coherent loss of such devices, the precise structure of amorphous dielectric layers on surfaces and interfaces and their associated loss mechanism are being actively studied. In particular, planar superconducting resonators are very sensitive to defects on their surfaces, such as two-level systems in oxidized metals and nonequilibrium quasiparticles, making these devices suitable probes for the different loss mechanisms. In this work, we present the design, fabrication, and characterization of Nb CPW resonators with different surface treatments with self-assembled monolayers (SAMs), which mitigate the growth of oxides in superconducting circuits. We demonstrate SAM-passivated resonators having internal quality factors of greater than 10⁶ at a single-photon excitation power (measured at 100 mK), which were probed using scanning electron microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy to demonstrate the efficiency of our surface treatment. Finally, we compared the improvements in the experimental quality factors to those obtained by numerical simulation.