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Ungerer JH, Pally A, Kononov A, Lehmann S, Ridderbos J, Potts PP, Thelander C, Dick KA, Maisi VF, Scarlino P, Baumgartner A, Schönenberger C. Strong coupling between a microwave photon and a singlet-triplet qubit. Nat Commun 2024; 15:1068. [PMID: 38316779 PMCID: PMC10844229 DOI: 10.1038/s41467-024-45235-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Accepted: 01/18/2024] [Indexed: 02/07/2024] Open
Abstract
Combining superconducting resonators and quantum dots has triggered tremendous progress in quantum information, however, attempts at coupling a resonator to even charge parity spin qubits have resulted only in weak spin-photon coupling. Here, we integrate a zincblende InAs nanowire double quantum dot with strong spin-orbit interaction in a magnetic-field resilient, high-quality resonator. The quantum confinement in the nanowire is achieved using deterministically grown wurtzite tunnel barriers. Our experiments on even charge parity states and at large magnetic fields, allow us to identify the relevant spin states and to measure the spin decoherence rates and spin-photon coupling strengths. We find an anti-crossing between the resonator mode in the single photon limit and a singlet-triplet qubit with a spin-photon coupling strength of g/2π = 139 ± 4 MHz. This coherent coupling exceeds the resonator decay rate κ/2π = 19.8 ± 0.2 MHz and the qubit dephasing rate γ/2π = 116 ± 7 MHz, putting our system in the strong coupling regime.
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Affiliation(s)
- J H Ungerer
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056, Basel, Switzerland.
- Swiss Nanoscience Institute, University of Basel, Klingelbergstrasse 82, CH-4056, Basel, Switzerland.
| | - A Pally
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056, Basel, Switzerland.
| | - A Kononov
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056, Basel, Switzerland
| | - S Lehmann
- Solid State Physics and NanoLund, Lund University, Box 118, S-22100, Lund, Sweden
| | - J Ridderbos
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056, Basel, Switzerland
- MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede, The Netherlands
| | - P P Potts
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056, Basel, Switzerland
- Swiss Nanoscience Institute, University of Basel, Klingelbergstrasse 82, CH-4056, Basel, Switzerland
| | - C Thelander
- Solid State Physics and NanoLund, Lund University, Box 118, S-22100, Lund, Sweden
| | - K A Dick
- Centre for Analysis and Synthesis, Lund University, Box 124, S-22100, Lund, Sweden
| | - V F Maisi
- Solid State Physics and NanoLund, Lund University, Box 118, S-22100, Lund, Sweden
| | - P Scarlino
- Institute of Physics and Center for Quantum Science and Engineering, Ecole Polytechnique Fédérale de Lausanne, CH-1015, Lausanne, Switzerland
| | - A Baumgartner
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056, Basel, Switzerland
- Swiss Nanoscience Institute, University of Basel, Klingelbergstrasse 82, CH-4056, Basel, Switzerland
| | - C Schönenberger
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056, Basel, Switzerland
- Swiss Nanoscience Institute, University of Basel, Klingelbergstrasse 82, CH-4056, Basel, Switzerland
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Ungerer JH, Sarmah D, Kononov A, Ridderbos J, Haller R, Cheung LY, Schönenberger C. Performance of high impedance resonators in dirty dielectric environments. EPJ Quantum Technol 2023; 10:41. [PMID: 37810533 PMCID: PMC10558395 DOI: 10.1140/epjqt/s40507-023-00199-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/13/2023] [Accepted: 09/27/2023] [Indexed: 10/10/2023]
Abstract
High-impedance resonators are a promising contender for realizing long-distance entangling gates between spin qubits. Often, the fabrication of spin qubits relies on the use of gate dielectrics which are detrimental to the quality of the resonator. Here, we investigate loss mechanisms of high-impedance NbTiN resonators in the vicinity of thermally grown SiO2 and Al2O3 fabricated by atomic layer deposition. We benchmark the resonator performance in elevated magnetic fields and at elevated temperatures and find that the internal quality factors are limited by the coupling between the resonator and two-level systems of the employed oxides. Nonetheless, the internal quality factors of high-impedance resonators exceed 103 in all investigated oxide configurations which implies that the dielectric configuration would not limit the performance of resonators integrated in a spin-qubit device. Because these oxides are commonly used for spin qubit device fabrication, our results allow for straightforward integration of high-impedance resonators into spin-based quantum processors. Hence, these experiments pave the way for large-scale, spin-based quantum computers.
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Affiliation(s)
- J. H. Ungerer
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
- Swiss Nanoscience Institute, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - D. Sarmah
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - A. Kononov
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - J. Ridderbos
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
- Present Address: NanoElectronics Group, MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - R. Haller
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - L. Y. Cheung
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
| | - C. Schönenberger
- Department of Physics, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
- Swiss Nanoscience Institute, University of Basel, Klingelbergstrasse 82, 4056 Basel, Switzerland
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Conesa-Boj S, Li A, Koelling S, Brauns M, Ridderbos J, Nguyen TT, Verheijen MA, Koenraad PM, Zwanenburg FA, Bakkers EPAM. Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires. Nano Lett 2017; 17:2259-2264. [PMID: 28231017 PMCID: PMC5391496 DOI: 10.1021/acs.nanolett.6b04891] [Citation(s) in RCA: 23] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2016] [Revised: 02/07/2017] [Indexed: 05/28/2023]
Abstract
The ability of core-shell nanowires to overcome existing limitations of heterostructures is one of the key ingredients for the design of next generation devices. This requires a detailed understanding of the mechanism for strain relaxation in these systems in order to eliminate strain-induced defect formation and thus to boost important electronic properties such as carrier mobility. Here we demonstrate how the hole mobility of [110]-oriented Ge-Si core-shell nanowires can be substantially enhanced thanks to the realization of large band offset and coherent strain in the system, reaching values as high as 4200 cm2/(Vs) at 4 K and 1600 cm2/(Vs) at room temperature for high hole densities of 1019 cm-3. We present a direct correlation of (i) mobility, (ii) crystal direction, (iii) diameter, and (iv) coherent strain, all of which are extracted in our work for individual nanowires. Our results imply [110]-oriented Ge-Si core-shell nanowires as a promising candidate for future electronic and quantum transport devices.
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Affiliation(s)
- S Conesa-Boj
- Kavli Institute of Nanoscience, Delft University of Technology , Lorentzweg 1, 2628 CJ Delft, The Netherlands
- Department of Applied Physics, TU Eindhoven , Den Dolech 2, 5612 AZ Eindhoven, The Netherlands
| | - A Li
- Kavli Institute of Nanoscience, Delft University of Technology , Lorentzweg 1, 2628 CJ Delft, The Netherlands
- Department of Applied Physics, TU Eindhoven , Den Dolech 2, 5612 AZ Eindhoven, The Netherlands
| | - S Koelling
- Department of Applied Physics, TU Eindhoven , Den Dolech 2, 5612 AZ Eindhoven, The Netherlands
| | - M Brauns
- NanoElectronics Group, MESA Institute for Nanotechnology, University of Twente , P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - J Ridderbos
- NanoElectronics Group, MESA Institute for Nanotechnology, University of Twente , P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - T T Nguyen
- NanoElectronics Group, MESA Institute for Nanotechnology, University of Twente , P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - M A Verheijen
- Kavli Institute of Nanoscience, Delft University of Technology , Lorentzweg 1, 2628 CJ Delft, The Netherlands
- Philips Innovation Services Eindhoven , High Tech Campus 11, 5656 AE Eindhoven, The Netherlands
| | - P M Koenraad
- Department of Applied Physics, TU Eindhoven , Den Dolech 2, 5612 AZ Eindhoven, The Netherlands
| | - F A Zwanenburg
- NanoElectronics Group, MESA Institute for Nanotechnology, University of Twente , P.O. Box 217, 7500 AE Enschede, The Netherlands
| | - E P A M Bakkers
- Kavli Institute of Nanoscience, Delft University of Technology , Lorentzweg 1, 2628 CJ Delft, The Netherlands
- Department of Applied Physics, TU Eindhoven , Den Dolech 2, 5612 AZ Eindhoven, The Netherlands
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