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Ribisch C, Hofbauer M, Kohneh Poushi SS, Zimmer A, Schneider-Hornstein K, Goll B, Zimmermann H. Multi-Channel Gating Chip in 0.18 µm High-Voltage CMOS for Quantum Applications. Sensors (Basel) 2023; 23:9644. [PMID: 38139490 PMCID: PMC10747136 DOI: 10.3390/s23249644] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2023] [Revised: 11/23/2023] [Accepted: 12/04/2023] [Indexed: 12/24/2023]
Abstract
A gating circuit for a photonic quantum simulator is introduced. The gating circuit uses a large excess bias voltage of up to 9.9 V and an integrated single-photon avalanche diode (SPAD). Nine channels are monolithically implemented in an application-specific integrated circuit (ASIC) including nine SPADs using 0.18 µm high-voltage CMOS technology. The gating circuit achieves rise and fall times of 480 ps and 280 ps, respectively, and a minimum full-width-at-half-maximum pulse width of 1.26 ns. Thanks to a fast and sensitive comparator, a detection threshold for avalanche events of less than 100 mV is possible. The power consumption of all nine channels is about 250 mW in total. This gating chip is used to characterize the integrated SPADs. A photon detection probability of around 50% at 9.9 V excess bias and for a wavelength of 635 nm is found.
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Affiliation(s)
- Christoph Ribisch
- Institute of Electrodynamics, Microwave and Circuit Engineering, Faculty of Electrical Engineering and Information Technology, Technische Universität Wien, 1040 Vienna, Austria; (M.H.); (S.S.K.P.); (K.S.-H.); (B.G.); (H.Z.)
| | - Michael Hofbauer
- Institute of Electrodynamics, Microwave and Circuit Engineering, Faculty of Electrical Engineering and Information Technology, Technische Universität Wien, 1040 Vienna, Austria; (M.H.); (S.S.K.P.); (K.S.-H.); (B.G.); (H.Z.)
| | - Seyed Saman Kohneh Poushi
- Institute of Electrodynamics, Microwave and Circuit Engineering, Faculty of Electrical Engineering and Information Technology, Technische Universität Wien, 1040 Vienna, Austria; (M.H.); (S.S.K.P.); (K.S.-H.); (B.G.); (H.Z.)
| | | | - Kerstin Schneider-Hornstein
- Institute of Electrodynamics, Microwave and Circuit Engineering, Faculty of Electrical Engineering and Information Technology, Technische Universität Wien, 1040 Vienna, Austria; (M.H.); (S.S.K.P.); (K.S.-H.); (B.G.); (H.Z.)
| | - Bernhard Goll
- Institute of Electrodynamics, Microwave and Circuit Engineering, Faculty of Electrical Engineering and Information Technology, Technische Universität Wien, 1040 Vienna, Austria; (M.H.); (S.S.K.P.); (K.S.-H.); (B.G.); (H.Z.)
| | - Horst Zimmermann
- Institute of Electrodynamics, Microwave and Circuit Engineering, Faculty of Electrical Engineering and Information Technology, Technische Universität Wien, 1040 Vienna, Austria; (M.H.); (S.S.K.P.); (K.S.-H.); (B.G.); (H.Z.)
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Kohneh Poushi SS, Goll B, Schneider-Hornstein K, Hofbauer M, Zimmermann H. Area and Bandwidth Enhancement of an n +/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology. Sensors (Basel) 2023; 23:3403. [PMID: 37050463 PMCID: PMC10098577 DOI: 10.3390/s23073403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/10/2023] [Revised: 03/21/2023] [Accepted: 03/22/2023] [Indexed: 06/19/2023]
Abstract
This paper presents a CMOS-integrated dot avalanche photodiode (dot-APD) that features a small central n+/p-well hemispherical cathode/p-well structure circularly surrounded by an anode ring. The dot-APD enables wide hemispherical depletion, charge collection from a large volume, and a small multiplication region. These features result in a large light-sensitive area, high responsivity and bandwidth, and exceptionally low junction capacitance. The active area can be further expanded using a multi-dot structure, which is an array of several cathode/p-well dots with a shared anode. Experimental results show that a 5 × 5 multi-dot APD with an active area of 70 μm × 70 μm achieves a bandwidth of 1.8 GHz, a responsivity of 9.7 A/W, and a capacitance of 27 fF. The structure of the multi-dot APD allows for the design of APDs in various sizes that offer high bandwidth and responsivity as an optical detector for various applications while still maintaining a small capacitance.
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Messa A, Cossu G, Presi M, Schidl S, Schneider-Hornstein K, Zimmermann H, Ciaramella E. Detecting WDM visible light signals by a single multi-color photodiode with MIMO processing. Opt Lett 2020; 45:1160-1163. [PMID: 32108795 DOI: 10.1364/ol.385641] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2019] [Accepted: 01/14/2020] [Indexed: 06/10/2023]
Abstract
For the first time, to the best of our knowledge, we experimentally demonstrate that multiple-input-multiple-output (MIMO) processing allows using a single photodiode to detect simultaneously a wavelength-division multiplexing (WDM) visible light communications (VLC) signal. The photodiode has a triple junction, and when it is illuminated by a WDM signal, the junctions produce inherently three photocurrents that are unusable for detecting any of the WDM signals. However, by means of linear MIMO processing, we are able to recover the transmitted signals exactly. Bit error rate measurements confirm the effectiveness of the proposed solution. This opens a new scenario for practical WDM-VLC systems.
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Gaberl W, Steindl B, Schneider-Hornstein K, Enne R, Zimmermann H. 0.35 μm CMOS avalanche photodiode with high responsivity and responsivity-bandwidth product. Opt Lett 2014; 39:586-589. [PMID: 24487872 DOI: 10.1364/ol.39.000586] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
A highly sensitive avalanche photodiode (APD) in 0.35 μm CMOS technology is presented. Due to a thick intrinsic absorption layer, a high responsivity at a low bias voltage, where the avalanche gain is 1, is combined with an excellent avalanche gain at high voltages to achieve a maximum overall responsivity of the APD of more than 10 kA/W. This responsivity exceeds that of other submicrometer CMOS APDs by a factor of more than 700. As a figure of merit the responsivity-bandwidth product is defined, and the achieved value of 23.46 A/W·GHz is 2.4 times higher than the values found in the literature.
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Savulimedu Veeravalli V, Polzer T, Schmid U, Steininger A, Hofbauer M, Schweiger K, Dietrich H, Schneider-Hornstein K, Zimmermann H, Voss KO, Merk B, Hajek M. An infrastructure for accurate characterization of single-event transients in digital circuits. Microprocess Microsyst 2013; 37:772-791. [PMID: 24748694 PMCID: PMC3990448 DOI: 10.1016/j.micpro.2013.04.011] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
We present the architecture and a detailed pre-fabrication analysis of a digital measurement ASIC facilitating long-term irradiation experiments of basic asynchronous circuits, which also demonstrates the suitability of the general approach for obtaining accurate radiation failure models developed in our FATAL project. Our ASIC design combines radiation targets like Muller C-elements and elastic pipelines as well as standard combinational gates and flip-flops with an elaborate on-chip measurement infrastructure. Major architectural challenges result from the fact that the latter must operate reliably under the same radiation conditions the target circuits are exposed to, without wasting precious die area for a rad-hard design. A measurement architecture based on multiple non-rad-hard counters is used, which we show to be resilient against double faults, as well as many triple and even higher-multiplicity faults. The design evaluation is done by means of comprehensive fault injection experiments, which are based on detailed Spice models of the target circuits in conjunction with a standard double-exponential current injection model for single-event transients (SET). To be as accurate as possible, the parameters of this current model have been aligned with results obtained from 3D device simulation models, which have in turn been validated and calibrated using micro-beam radiation experiments at the GSI in Darmstadt, Germany. For the latter, target circuits instrumented with high-speed sense amplifiers have been used for analog SET recording. Together with a probabilistic analysis of the sustainable particle flow rates, based on a detailed area analysis and experimental cross-section data, we can conclude that the proposed architecture will indeed sustain significant target hit rates, without exceeding the resilience bound of the measurement infrastructure.
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Affiliation(s)
| | - Thomas Polzer
- Institute of Computer Engineering, Vienna University of Technology, Treitlstrasse 1-3, A-1040 Vienna, Austria
| | - Ulrich Schmid
- Institute of Computer Engineering, Vienna University of Technology, Treitlstrasse 1-3, A-1040 Vienna, Austria
| | - Andreas Steininger
- Institute of Computer Engineering, Vienna University of Technology, Treitlstrasse 1-3, A-1040 Vienna, Austria
| | - Michael Hofbauer
- Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology,Gusshausstrasse 25/354, A-1040 Vienna, Austria
| | - Kurt Schweiger
- Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology,Gusshausstrasse 25/354, A-1040 Vienna, Austria
| | - Horst Dietrich
- Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology,Gusshausstrasse 25/354, A-1040 Vienna, Austria
| | - Kerstin Schneider-Hornstein
- Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology,Gusshausstrasse 25/354, A-1040 Vienna, Austria
| | - Horst Zimmermann
- Institute of Electrodynamics, Microwave and Circuit Engineering, Vienna University of Technology,Gusshausstrasse 25/354, A-1040 Vienna, Austria
| | - Kay-Obbe Voss
- Materials Research Group, Helmholtz Centre for Heavy Ion Research (GSI), Planckstrasse 1, D-64291 Darmstadt, Germany
| | - Bruno Merk
- Materials Research Group, Helmholtz Centre for Heavy Ion Research (GSI), Planckstrasse 1, D-64291 Darmstadt, Germany
| | - Michael Hajek
- Institute of Atomic and Subatomic Physics, Vienna University of Technology, Stadionallee 2, A-1020 Vienna, Austria
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