Compact angled multimode interference duplexers for multi-gas sensing applications

A compact, low-loss 2 × 1 angled-multi-mode-interference-based duplexer is proposed as an optical component for integrating several wavelengths with high coupling efficiency. The self-imaging principle in multimode waveguides is exploited to combine two target wavelengths, corresponding to distinctive absorption lines of important trace gases. The device performance has been numerically enhanced by engineering the geometrical parameters, offering trade-offs in coupling efficiency ratios. The proposed designs are used as versatile duplexers for detecting gas combinations such as ammonia-methane, ammonia-ethane, and ammonia-carbon dioxide, enabling customization for specific sensing applications. The duplexers designed are then fabricated and characterized, with a special focus on assessing the impact of the different target wavelengths on coupling efficiency.

Highly efficient and selective integrated directional couplers for multigas sensing applications

The design and fabrication of a compact, low-loss, broadband directional coupler (DC) based duplexer operating in the near-infrared (NIR) region are demonstrated. The duplexer exhibits high selectivity and coupling efficiency (CE), for target wavelengths of 1530 nm and 1653.7 nm, making it applicable in systems for the multi-gas detection of ammonia and methane. The measured CE for the duplexer is 73% and 76% at 1530 nm and 1653.7 nm respectively. These results demonstrate the effectiveness of the duplexer as a broadband and scalable power source for highly sensitive sensing techniques, like quartz-enhanced photoacoustic spectroscopy (QEPAS). Its compact size and low-loss characteristics make it highly portable and well-suited for drone-based multi-gas detection applications.

Unlocking the monolithic integration scenario: optical coupling between GaSb diode lasers epitaxially grown on patterned Si substrates and passive SiN waveguides

Silicon (Si) photonics has recently emerged as a key enabling technology in many application fields thanks to the mature Si process technology, the large silicon wafer size, and promising Si optical properties. The monolithic integration by direct epitaxy of III-V lasers and Si photonic devices on the same Si substrate has been considered for decades as the main obstacle to the realization of dense photonics chips. Despite considerable progress in the last decade, only discrete III-V lasers grown on bare Si wafers have been reported, whatever the wavelength and laser technology. Here we demonstrate the first semiconductor laser grown on a patterned Si photonics platform with light coupled into a waveguide. A mid-IR GaSb-based diode laser was directly grown on a pre-patterned Si photonics wafer equipped with SiN waveguides clad by SiO2. Growth and device fabrication challenges, arising from the template architecture, were overcome to demonstrate more than 10 mW outpower of emitted light in continuous wave operation at room temperature. In addition, around 10% of the light was coupled into the SiN waveguides, in good agreement with theoretical calculations for this butt-coupling configuration. This work lift an important building block and it paves the way for future low-cost, large-scale, fully integrated photonic chips.

Polycrystalline silicon PhC cavities for CMOS on-chip integration

In this work, we present an on-chip 2D and 3D photonics integration solution compatible with Front End of Line integration (FEOL) using deposited polycrystalline silicon (poly:Si) for optical interconnects applications. Deposited silicon integration on a bulk silicon wafer is here discussed in all its processing steps and configurations. Moreover, results of deposited silicon high-Q Photonic Crystal (PhC) resonators are shown, demonstrating the possibility to employ optical resonators patterned on this material in the next generation of 2D and 3D integrated optical interconnects.

Long cavity photonic crystal laser in FDML operation using an akinetic reflective filter

A novel configuration of a Fourier domain mode locked (FDML) laser based on silicon photonics platform is presented in this work that exploits the narrowband reflection spectrum of a photonic crystal (PhC) cavity resonator. Configured as a linear Fabry-Perot laser, forward biasing of a p-n junction on the PhC cavity allowed for thermal tuning of the spectrum. The modulation frequency applied to the reflector equalled the inverse roundtrip time of the long cavity resulting in stable FDML operation over the swept wavelength range. An interferometric phase measurement measured the sweeping instantaneous frequency of the laser. The silicon photonics platform has potential for very compact implementation, and the electro-optic modulation method opens the possibility of modulation speeds far beyond those of mechanical filters.

Frequency modulated hybrid photonic crystal laser by thermal tuning

We demonstrate frequency modulation (FM) in an external cavity (EC) III-V/silicon laser, comprising a reflective semiconductor optical amplifier (RSOA) and a silicon nitride (SiN) waveguide vertically coupled to a 2D silicon photonic crystal (PhC) cavity. The PhC cavity acts as a tunable narrowband reflector giving wavelength selectivity. The FM was achieved by thermo-optical modulation of the reflector via a p-n junction. Single-mode operation was ensured by the short cavity length, overlapping only one longitudinal laser mode with the reflector. We investigate the effect of reflector modulation theoretically and experimentally and predict a substantial tracking of the resonator by the laser frequency with very small intensity modulation (IM).

Realization of a flat-band superprism on-chip from parallelogram lattice photonic crystals

By optimizing the dispersion curve of a parallelogram-based 2D photonic crystal superprism for constant angular group velocity dispersion over a broad bandwidth, we designed a device capable of experimentally demonstrating linear dispersion from 1500 to 1600 nm with clear separation of as many as eight channels, while maintaining a compact footprint.

Thermally stable hybrid cavity laser based on silicon nitride gratings

In this paper, we show the experimental results of a thermally stable Si₃N₄ external cavity (SiN EC) laser with high power output and the lowest SiN EC laser threshold to our knowledge. The device consists of a 250 μm sized reflective semiconductor optical amplifier butt-coupled to a passive chip based on a series of Si₃N₄ Bragg gratings acting as narrow reflectors. A threshold of 12 mA has been achieved, with a typical side-mode suppression ratio of 45 dB and measured power output higher than 3 mW. Furthermore, we achieved a mode-hop free-lasing regime in the range of 15-62 mA and wavelength thermal stability up to 80°C. This solves the challenges related to cavity resonances' thermal shift and shows the possibility for this device to be integrated in dense wavelength-division multiplexing (WDM) and heat-intensive optical interconnects technologies.

Optimizing band-edge slow light in silicon-on-insulator waveguide gratings

A systematic analysis of photonic bands and group index in silicon grating waveguides is performed, in order to optimize band-edge slow-light behavior in integrated structures with low losses. A combination of numerical methods and perturbation theory is adopted. It is shown that a substantial increase of slow light bandwidth is achieved when decreasing the internal width of the waveguide and the silicon thickness in the cladding region. It is also observed that a reduction of the internal width does not undermine the performance of an adiabatic taper.

Tight focusing of laser light using a chromium Fresnel zone plate

Using near-field scanning microscopy, we demonstrate that a 15-µm zone plate fabricated in a 70-nm chromium film sputtered on a glass substrate and having a focal length and outermost zone's width equal to the incident wavelength λ = 532 nm, focuses a circularly polarized Gaussian beam into a circular subwavelength focal spot whose diameter at the full-width of half-maximum intensity is FWHM = 0.47λ. This value is in near-accurate agreement with the FDTD-aided numerical estimate of FWHM = 0.46λ. When focusing a Gaussian beam linearly polarized along the y-axis, an elliptic subwavelength focal spot is experimentally found to measure FWHMx = 0.42λ (estimated value FWHMx = 0.40λ) and FWHMy = 0.64λ. The subwavelength focal spots presented here are the tightest among all attained so far for homogeneously polarized beams by use of non-immersion amplitude zone plates.

Photonic crystal slow light waveguides in a kagome lattice

Slow light photonic crystal waveguides tightly compress propagating light and increase interaction times, showing immense potential for all-optical delay and enhanced light-matter interactions. Yet, their practical application has largely been limited to moderate group index values (<100), due to a lack of waveguides that reliably demonstrate slower light. This limitation persists because nearly all such research has focused on a single photonic crystal lattice type: the triangular lattice. Here, we present waveguides based on the kagome lattice that demonstrate an intrinsically high group index and exhibit slow and stopped light. We experimentally demonstrate group index values of >150, limited by our measurement resolution. The kagome-lattice waveguides are an excellent starting point for further slow light engineering in photonic crystal waveguides.

Thin high numerical aperture metalens

We designed, fabricated, and characterized a thin metalens in an amorphous silicon film of diameter 30 µm, focal length equal to the incident wavelength 633 nm. The lens is capable of simultaneously manipulating the state of polarization and phase of incident light. The lens converts a linearly polarized beam into radially polarized light, producing a subwavelength focus. When illuminated with a linearly polarized Gaussian beam, the lens produces a focal spot whose size at full-width half-maximum intensity is 0.49λ and 0.55λ (λ is incident wavelength). The experimental results are in good agreement with the numerical simulation, with the simulated focal spot measuring 0.46λ and 0.52λ. This focal spot is less than all other focal spots obtained using metalenses.

Microlens-aided focusing of linearly and azimuthally polarized laser light

We have investigated a four-sector transmission polarization converter (4-SPC) for a wavelength of 633 nm, that enables the conversion of a linearly polarized incident beam into a mixture of linearly and azimuthally polarized beams. It was numerically shown that by placing a Fresnel zone plate of focal length 532 nm immediately after the 4-SPC, the incident light can be focused into an oblong subwavelength focal spot whose size is smaller than the diffraction limit (with width and breadth, respectively, measuring FWHM = 0.28λ and FWHM = 0.45λ, where λ is the incident wavelength and FWHM stands for full-width at half maximum of the intensity). After passing through the 4-SPC, light propagates in free space over a distance of 300 μm before being focused by a Fresnel zone plate (ZP), resulting in focal spot measuring 0.42λ and 0.81λ. The focal spot was measured by a near-field microscope SNOM, and the transverse E-field component of the focal spot was calculated to be 0.42λ and 0.59λ. This numerical result was verified experimentally, giving a focal spot of smaller and larger size, respectively, measuring 0.46λ and 0.57λ. To our knowledge, this is the first implementation of polarization conversion and subwavelength focusing of light using a pair of transmission micro-optic elements.

Lithographic wavelength control of an external cavity laser with a silicon photonic crystal cavity-based resonant reflector

We report the experimental demonstration of a new design for external cavity hybrid lasers consisting of a III-V semiconductor optical amplifier (SOA) with fiber reflector and a photonic crystal (PhC)-based resonant reflector on SOI. The silicon reflector is composed of an SU8 polymer bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and side-mode suppression ratios of more than 25 dB.

Tight focus of light using micropolarizer and microlens

Using a binary microlens of diameter 14 μm and focal length 532 nm (NA=0.997) in resist, we focus a 633 nm laser beam into a near-circular focal spot with dimensions (0.35 ± 0.02)λ and (0.38 ± 0.02)λ (λ is incident wavelength) at full width half-maximum intensity. The area of the focal spot is 0.105λ(2). The incident light is a mixture of linearly and radially polarized beams generated by reflecting a linearly polarized Gaussian beam at a 100  μm × 100  μm four-sector subwavelength diffractive optical microelement with a gold coating. The focusing of a linearly polarized laser beam (the other conditions being the same) is found to produce an elliptical focal spot measuring (0.40 ± 0.02)λ and (0.50 ± 0.02)λ. To our knowledge, this is the first implementation of subwavelength focusing of light using a pair of micro-optic elements (a binary microlens and a micropolarizer).

Extraction of group index of lossy photonic crystal waveguides

We present a numerical approach to extract group index in photonic crystal (PhC) waveguides using two- and three-dimensional finite-difference time-domain methods and make a quantitative study of the effects of loss on slow light propagation in PhC waveguides. PhC waveguides are simulated with varying material loss and varying PhC waveguide length. Finally, we validate our method by comparing three-dimensional simulation results with experimental results.

Experimental demonstration of original optical filter based on multiply coupled waveguides

We present an experimental demonstration of an optical filter based on multiply coupled waveguides that has previously been demonstrated only numerically. The experimental results show a good match to numerical modeling using a 2D finite-difference time-domain method that utilizes a modified effective index method (MEIM) approximation. The MEIM correctly describes both the phase and the group indices of 3D silicon wire, providing the means to study complicated and large photonic structures with moderate computer resources and simulation time. An optical filter with a set of 12 directional couplers, constructed on a SOITEC silicon-on-insulator wafer with 220 nm of silicon on a 2-μm-thick buried oxide layer, provides at optical wavelength 1.59 μm a free spectral range about 16 nm and 3 dB linewidth about 1.6 nm. These parameters are limited by the radius of curvature used (5 μm) and the small structure sizes available (40  μm×200  μm). Fabrication imperfections, such as sidewall roughness, cause moderate variations in the waveguide width, approximately 2 nm, which results in parasitic responses in the transmission spectrum of the drop spate. This effect could be decreased through improvements in technology and by decreasing the length of the connecting waveguides. Our results prove that proposed filter can be manufactured by modern CMOS compatible technology and is promising for a range of applications in photonics.

Hydrogen induced optically-active defects in silicon photonic nanocavities

We demonstrate intense room temperature photoluminescence (PL) from optically active hydrogen- related defects incorporated into crystalline silicon. Hydrogen was incorporated into the device layer of a silicon on insulator (SOI) wafer by two methods: hydrogen plasma treatment and ion implantation. The room temperature PL spectra show two broad PL bands centered at 1300 and 1500 nm wavelengths: the first one relates to implanted defects while the other band mainly relates to the plasma treatment. Structural characterization reveals the presence of nanometric platelets and bubbles and we attribute different features of the emission spectrum to the presence of these different kind of defects. The emission is further enhanced by introducing defects into photonic crystal (PhC) nanocavities. Transmission electron microscopy analyses revealed that the isotropicity of plasma treatment causes the formation of a higher defects density around the whole cavity compared to the ion implantation technique, while ion implantation creates a lower density of defects embedded in the Si layer, resulting in a higher PL enhancement. These results further increase the understanding of the nature of optically active hydrogen defects and their relation with the observed photoluminescence, which will ultimately lead to the development of intense and tunable crystalline silicon light sources at room temperature.

Optically induced indirect photonic transitions in a slow light photonic crystal waveguide

We demonstrate indirect photonic transitions in a silicon slow light photonic crystal waveguide. The transitions are driven by an optically generated refractive index front that moves along the waveguide and interacts with a signal pulse copropagating in the structure. We experimentally confirm a theoretical model which indicates that the ratio of the frequency and wave vector shifts associated with the indirect photonic transition is identical to the propagation velocity of the refractive index front. The physical origin of the transitions achieved here is fundamentally different than in previously proposed refractive index modulation concepts with fixed temporal and spatial modulation frequencies; as here, the interaction with the refractive index front results in a Doppler-like signal frequency and wave vector shift. Consequently, the bandwidth over which perfect mode frequency and wave vector matching is achieved is not intrinsically limited by the shape of the photonic bands, and tuning of the indirect photonic transitions is possible without any need for geometrical modifications of the structure. Our device is genuinely nonreciprocal, as it provides different frequency shifts for co- and counterpropagating signal and index fronts.

Planar surface implanted diffractive grating couplers in SOI

Grating couplers are used to efficiently couple light from an optical fibre to a silicon waveguide as they allow light to be coupled into or out from any location on the device without the need for cleaving. However, using the typical surface relief grating fabrication method reduces surface planarity and hence makes further processing more difficult. The ability to manufacture high quality material layers on top of a grating coupler allows multiple active optical layers to be realized for multi-layer integrated optical circuits, and may enable monolithic integration of optical and electronic circuits on separate layers. Furthermore, the nature of the refractive index change may enable removal via rapid thermal annealing for wafer scale testing applications. We demonstrate for the first time a coupling device utilising a refractive index change introduced by lattice disorder. Simulations show 44% of the power can be extracted from the waveguide by using uniform implanted gratings, which is not dissimilar to the performance of typical uniform surface relief gratings currently used. Losses determined empirically, of 5.5 dB per coupler have been demonstrated.

Experimental high numerical aperture focusing with high contrast gratings

We demonstrate high aperture (up to NA~0.64) three-dimensional focusing in free space based on wavefront-engineered diffraction gratings. The grating lens' optical response is tailored by spatially varying the grating ridge and groove width in two dimensions to achieve focal lengths of order 100 μm that are crucial for micro-optical applications. The phase profile of the lens includes multiple 2π phase jumps and was obtained by applying an algorithm for finding the optimal path for both phase and amplitude. Experimental measurements reveal a lateral spot size of 5 μm that is close to the size of a corresponding Airy disk.

Enhanced 1.54 μm emission in Y-Er disilicate thin films on silicon photonic crystal cavities

We introduce an Y-Er disilicate thin film deposited on top of a silicon photonic crystal cavity as a gain medium for active silicon photonic devices. Using photoluminescence analysis, we demonstrate that Er luminescence at 1.54 μm is enhanced by coupling with the cavity modes, and that the directionality of the Er optical emission can be controlled through far-field optimization of the cavity. We determine the maximum excitation power that can be coupled into the cavity to be 12 mW, which is limited by free carrier absorption and thermal heating. At maximum excitation, we observe that nearly 30% of the Er population is in the excited state, as estimated from the direct measurement of the emitted power. Finally, using time-resolved photoluminescence measurements, we determine a value of 2.3 for the Purcell factor of the system at room temperature. These results indicate that overcoating a silicon photonic nanostructure with an Er-rich dielectric layer is a promising method for achieving light emission at 1.54 µm wavelength on a silicon platform.

Analysis of the shape of a subwavelength focal spot for the linearly polarized light

By decomposing a linearly polarized light field in terms of plane waves, the elliptic intensity distribution across the focal spot is shown to be determined by the E-vector's longitudinal component. Considering that the Poynting vector's projection onto the optical axis (power flux) is independent of the E-vector's longitudinal component, the power flux cross section has a circular form. Using a near-field scanning optical microscope (NSOM) with a small-aperture metal tip, we show that a glass zone plate (ZP) having a focal length of one wavelength focuses a linearly polarized Gaussian beam into a weak ellipse with the Cartesian axis diameters FWHM(x)=(0.44±0.02)λ and FWHM(y)=(0.52±0.02)λ and the (depth of focus) DOF=(0.75±0.02)λ, where λ is the incident wavelength. The comparison of the experimental and simulation results suggests that NSOM with a hollow pyramidal aluminum-coated tip (with 70° apex and 100 nm diameter aperture) measures the transverse intensity, rather than the power flux or the total intensity. The conclusion that the small-aperture metal tip measures the transverse intensity can be inferred from the Bethe-Bouwkamp theory.

Highly efficient optical filter based on vertically coupled photonic crystal cavity and bus waveguide

We experimentally demonstrate a new optical filter design based on a vertically coupled photonic crystal (PhC) cavity and a bus waveguide monolithically integrated on the silicon-on-insulator platform. The use of a vertically coupled waveguide gives flexibility in the choice of the waveguide material and dimensions, dramatically lowering the insertion loss while achieving very high coupling efficiencies to wavelength scale resonators and thus allows the creation of PhC-based optical filters with very high extinction ratio (>10 dB).

Mid-infrared photonic crystal waveguides in silicon

We demonstrate the design, fabrication and characterization of mid-infrared photonic crystal waveguides on a silicon-on-insulator platform, showing guided modes in the wavelength regime between 2.9 and 3.9 µm. The characterization is performed with a proprietary intra-cavity Optical Parametric Oscillator in a free space optical setup and with a fibre coupled setup using a commercial Quantum Cascade Laser. We discuss the use of an integrated Mach-Zehnder interferometer for dispersion measurements and report a measured group velocity of up to a value of n(g) = 12, and determine the propagation loss to be 20 dB/cm.

Cascaded modulator architecture for WDM applications

Integration density, channel scalability, low switching energy and low insertion loss are the major prerequisites for on-chip WDM systems. A number of device geometries have already been demonstrated that fulfill these criteria, at least in part, but combining all of the requirements is still a difficult challenge. Here, we propose and demonstrate a novel architecture consisting of an array of photonic crystal modulators connected by a dielectric bus waveguide. The device architecture features very high scalability and the modulators operate with an AC energy consumption of less than 1fJ/bit. Furthermore, we demonstrate cascadeability and multichannel operation by using a comb laser as the source that simultaneously drives 5 channels.

Fabrication and characterization of photonic crystal slow light waveguides and cavities

Slow light has been one of the hot topics in the photonics community in the past decade, generating great interest both from a fundamental point of view and for its considerable potential for practical applications. Slow light photonic crystal waveguides, in particular, have played a major part and have been successfully employed for delaying optical signals(1-4) and the enhancement of both linear(5-7) and nonlinear devices.(8-11) Photonic crystal cavities achieve similar effects to that of slow light waveguides, but over a reduced band-width. These cavities offer high Q-factor/volume ratio, for the realization of optically(12) and electrically(13) pumped ultra-low threshold lasers and the enhancement of nonlinear effects.(14-16) Furthermore, passive filters(17) and modulators(18-19) have been demonstrated, exhibiting ultra-narrow line-width, high free-spectral range and record values of low energy consumption. To attain these exciting results, a robust repeatable fabrication protocol must be developed. In this paper we take an in-depth look at our fabrication protocol which employs electron-beam lithography for the definition of photonic crystal patterns and uses wet and dry etching techniques. Our optimised fabrication recipe results in photonic crystals that do not suffer from vertical asymmetry and exhibit very good edge-wall roughness. We discuss the results of varying the etching parameters and the detrimental effects that they can have on a device, leading to a diagnostic route that can be taken to identify and eliminate similar issues. The key to evaluating slow light waveguides is the passive characterization of transmission and group index spectra. Various methods have been reported, most notably resolving the Fabry-Perot fringes of the transmission spectrum(20-21) and interferometric techniques.(22-25) Here, we describe a direct, broadband measurement technique combining spectral interferometry with Fourier transform analysis.(26) Our method stands out for its simplicity and power, as we can characterise a bare photonic crystal with access waveguides, without need for on-chip interference components, and the setup only consists of a Mach-Zehnder interferometer, with no need for moving parts and delay scans. When characterising photonic crystal cavities, techniques involving internal sources(21) or external waveguides directly coupled to the cavity(27) impact on the performance of the cavity itself, thereby distorting the measurement. Here, we describe a novel and non-intrusive technique that makes use of a cross-polarised probe beam and is known as resonant scattering (RS), where the probe is coupled out-of plane into the cavity through an objective. The technique was first demonstrated by McCutcheon et al.(28) and further developed by Galli et al.(29).

Four-wave mixing in slow light photonic crystal waveguides with very high group index

We report efficient four-wave mixing in dispersion engineered slow light silicon photonic crystal waveguides with a flat band group index of n(g) = 60. Using only 15 mW continuous wave coupled input power, we observe a conversion efficiency of -28 dB. This efficiency represents a 30 dB enhancement compared to a silicon nanowire of the same length. At higher powers, thermal redshifting due to linear absorption was found to detune the slow light regime preventing the expected improvement in efficiency. We then overcome this thermal limitation by using oxide-clad waveguides, which we demonstrate for group indices of n_g = 30. Higher group indices may be achieved with oxide clad-waveguides, and we predict conversion efficiencies approaching -10 dB, which is equivalent to that already achieved in silicon nanowires but for a 50x shorter length.

Slow-light enhanced correlated photon pair generation in a silicon photonic crystal waveguide

We report the generation of correlated photon pairs in the telecom C-band at room temperature from a dispersion-engineered silicon photonic crystal waveguide. The spontaneous four-wave mixing process producing the photon pairs is enhanced by slow-light propagation enabling an active device length of less than 100 μm. With a coincidence to accidental ratio of 12.8 at a pair generation rate of 0.006 per pulse, this ultracompact photon pair source paves the way toward scalable quantum information processing realized on-chip.

Tight focusing with a binary microaxicon

Using a near-field scanning microscope (NT-MDT) with a 100 nm aperture cantilever held 1 μm apart from a microaxicon of diameter 14 μm and period 800 nm, we measure a focal spot resulting from the illumination by a linearly polarized laser light of wavelength λ=532 nm, with its FWHM being equal to 0.58λ, and the depth of focus being 5.6λ. The rms deviation of the focal spot intensity from the calculated value is 6%. The focus intensity is five times larger than the maximal illumination beam intensity.

Third-harmonic generation in slow-light chalcogenide glass photonic crystal waveguides

We demonstrate third-harmonic generation (THG) in a dispersion-engineered slow-light photonic crystal waveguide fabricated in AMTIR-1 chalcogenide glass. Owing to the relatively low loss and low dispersion in the slow-light (c/30) regime, combined with the high nonlinear figure of merit of the material (∼2), we obtain a relatively large conversion efficiency (1.4×10(-8)/W(2)), which is 30× higher than in comparable silicon waveguides, and observe a uniform visible light pattern along the waveguide. These results widen the number of applications underpinned by THG in slow-light platforms, such as the direct observation of the spatial evolution of the propagating mode.

Ultracompact 160 Gbaud all-optical demultiplexing exploiting slow light in an engineered silicon photonic crystal waveguide

We demonstrate all-optical demultiplexing of a high-bandwidth, time-division multiplexed 160 Gbit/s signal to 10 Gbit/s channels, exploiting slow light enhanced four-wave mixing in a dispersion engineered, 96 μm long planar photonic crystal waveguide. We report error-free (bit error rate<10⁻⁹) operation of all 16 demultiplexed channels, with a power penalty of 2.2-2.4 dB, highlighting the potential of these structures as a platform for ultracompact all-optical nonlinear processes.

Four-wave mixing in photonic crystal waveguides: slow light enhancement and limitations

We demonstrate continuous wave four-wave mixing in silicon photonic crystal waveguides of 396 μm length with a group index of ng=30. The highest observed conversion efficiency is -24 dB for 90 mW coupled input pump power. The key question we address is whether the predicted fourth power dependence of the conversion efficiency on the slowdown factor (η≈S4) can indeed be observed in this system, and how the conversion efficiency depends on device length in the presence of propagation losses. We find that the expected dependencies hold as long as both realistic losses and the variation of mode shape with slowdown factor are taken into account. Having achieved a good agreement between a simple analytical model and the experiment, we also predict structures that can achieve the same conversion efficiency as already observed in nanowires for the same input power, yet for a device length that is 50 times shorter.

Fabrication of low loss dispersion engineered chalcogenide photonic crystals

We demonstrate low loss photonic crystal waveguides in chalcogenide (Ge(33)As(12)Se(55)) glasses. The measured losses are as low as 21 dB/cm. We experimentally determine the refractive index of the thin film chalcogenide glass to be n = 2.6 and demonstrate that dispersion engineering can be performed up to a group index of ng = 40 in this relatively low refractive index contrast system.

Loss engineered slow light waveguides

Slow light devices such as photonic crystal waveguides (PhCW) and coupled resonator optical waveguides (CROW) have much promise for optical signal processing applications and a number of successful demonstrations underpinning this promise have already been made. Most of these applications are limited by propagation losses, especially for higher group indices. These losses are caused by technological imperfections ("extrinsic loss") that cause scattering of light from the waveguide mode. The relationship between this loss and the group velocity is complex and until now has not been fully understood. Here, we present a comprehensive explanation of the extrinsic loss mechanisms in PhC waveguides and address some misconceptions surrounding loss and slow light that have arisen in recent years. We develop a theoretical model that accurately describes the loss spectra of PhC waveguides. One of the key insights of the model is that the entire hole contributes coherently to the scattering process, in contrast to previous models that added up the scattering from short sections incoherently. As a result, we have already realised waveguides with significantly lower losses than comparable photonic crystal waveguides as well as achieving propagation losses, in units of loss per unit time (dB/ns) that are even lower than those of state-of-the-art coupled resonator optical waveguides based on silicon photonic wires. The model will enable more advanced designs with further loss reduction within existing technological constraints.

Low-power continuous-wave generation of visible harmonics in silicon photonic crystal nanocavities

We present the first demonstration of frequency conversion by simultaneous second- and third-harmonic generation in a silicon photonic crystal nanocavity using continuous-wave optical excitation. We observe a bright dual wavelength emission in the blue/green (450-525 nm) and red (675-790 nm) visible windows with pump powers as low as few microwatts in the telecom bands, with conversion efficiencies of ∼ 10 (-5) /W and ∼ 10/ W(2) for the second- and third-harmonic, respectively. Scaling behaviors as a function of pump power and cavity quality-factor are demonstrated for both second- and third order processes. Successful comparison of measured and calculated emission patterns indicates that third-harmonic is a bulk effect while second-harmonic is a surface-related effect at the sidewall holes boundaries. Our results are promising for obtaining practical low-power, continuous-wave and widely tunable multiple harmonic generation on a silicon chip.

Four-wave mixing in slow light engineered silicon photonic crystal waveguides

We experimentally investigate four-wave mixing (FWM) in short (80 μm) dispersion-engineered slow light silicon photonic crystal waveguides. The pump, probe and idler signals all lie in a 14 nm wide low dispersion region with a near-constant group velocity of c/30. We measure an instantaneous conversion efficiency of up to -9dB between the idler and the continuous-wave probe, with 1W peak pump power and 6 nm pump-probe detuning. This conversion efficiency is found to be considerably higher (>10 × ) than that of a Si nanowire with a group velocity ten times larger. In addition, we estimate the FWM bandwidth to be at least that of the flat band slow light window. These results, supported by numerical simulations, emphasize the importance of engineering the dispersion of PhC waveguides to exploit the slow light enhancement of FWM efficiency, even for short device lengths.

Planar photonic crystal cavities with far-field optimization for high coupling efficiency and quality factor

Different types of planar photonic crystal cavities aimed at optimizing the far-field emission pattern are designed and experimentally assessed by resonant scattering measurements. We systematically investigate the interplay between achieving the highest possible quality (Q) factor and maximizing the in- and out-coupling efficiency into a narrow emission cone. Cavities operate at telecommunications wavelengths, i.e. around approximately 1.55 microm, and are realized in silicon membranes. A strong modification of the far-field emission pattern, and therefore a substantial increase of the coupling efficiency in the vertical direction, is obtained by properly modifying the holes around L3, L5 and L7 type PhC cavities, as we predict theoretically and show experimentally. An optimal compromise yielding simultaneously a high Q-factor and a large coupling to the fundamental cavity mode is found for a L7-type cavity with a measured Q congruent with 62000, whose resonant scattering efficiency is improved by about two orders of magnitude with respect to the unmodified structure. These results are especially useful for prospective applications in light emitting devices, such as nano-lasers or single-photon sources, in which vertical in- and out-coupling of the electromagnetic field is necessarily required.

Optical signal processing on a silicon chip at 640Gb/s using slow-light

We demonstrate optical performance monitoring of in-band optical signal to noise ratio (OSNR) and residual dispersion, at bit rates of 40Gb/s, 160Gb/s and 640Gb/s, using slow-light enhanced optical third harmonic generation (THG) in a compact (80microm) dispersion engineered 2D silicon photonic crystal waveguide. We show that there is no intrinsic degradation in the enhancement of the signal processing at 640Gb/s relative to that at 40Gb/s, and that this device should operate well above 1Tb/s. This work represents a record 16-fold increase in processing speed for a silicon device, and opens the door for slow light to play a key role in ultra-high bandwidth telecommunications systems.

Nonlinear loss dynamics in a silicon slow-light photonic crystal waveguide

We directly investigate both experimentally and numerically the influence of optical nonlinear loss dynamics on a silicon waveguide based all-optical device. The dynamics of these nonlinear losses are explored through the analysis of optical limiting of an amplitude distorted 10 Gbit/s signal in a slow-light silicon photonic crystal waveguide. As the frequency of the distortion approaches the free-carrier recombination rate, free-carrier absorption reaches a steady state, leaving two-photon absorption the dominant dynamic nonlinear loss. Our results highlight the importance of engineering the free-carrier lifetime in silicon waveguides for high speed all-optical processing applications.

High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode

High speed modulation based on a compact silicon ring resonator operating in depletion mode is demonstrated. The device exhibits an electrical small signal bandwidth of 19 GHz. The device is therefore a candidate for highly compact, wide bandwidth modulators for a variety of applications.

Optical filter with very large stopband (approximately 300 nm) based on a photonic-crystal vertical-directional coupler

We have designed, fabricated, and demonstrated a vertical directional coupler based on the coupling between a polymer waveguide and a W1 photonic crystal waveguide. The filters have a bandwidth of approximately 2 nm within a stopband of Delta lambda approximately 300 nm and an on-chip insertion loss of 1 dB. This is the first (to our knowledge) demonstration of a filter with such a large stopband that overcomes the bandwidth limitation of existing filters.

Photonic crystal lens for coupling two waveguides

We report the design, fabrication, and characterization of a new nanophotonic device comprising a two-dimensional photonic crystal (PhC) lens of size 3x4 microm fabricated in silicon-on-insulator. The PhC lens is put at the output of a planar waveguide of width 4.5 microm to couple light into a planar waveguide of width 1 microm, with two waveguides being of length 5 mm. A 1 microm off-axis displacement of the smaller waveguide leads to an 8-fold reduction of output light intensity, which means that the focal spot size at output of the PhC lens in silicon is less than 1 microm. The simulation has shown that the PhC lens has maximal transmittance at 1.55 microm, with the coupling efficiency being 73%. The focal spot size of the lens in air calculated at the FWHM is 0.32lambda (where lambda is the wavelength).

Slow light enhancement of nonlinear effects in silicon engineered photonic crystal waveguides

We report nonlinear measurements on 80microm silicon photonic crystal waveguides that are designed to support dispersionless slow light with group velocities between c/20 and c/50. By launching picoseconds pulses into the waveguides and comparing their output spectral signatures, we show how self phase modulation induced spectral broadening is enhanced due to slow light. Comparison of the measurements and numerical simulations of the pulse propagation elucidates the contribution of the various effects that determine the output pulse shape and the waveguide transfer function. In particular, both experimental and simulated results highlight the significant role of two photon absorption and free carriers in the silicon waveguides and their reinforcement in the slow light regime.

Silica-embedded silicon photonic crystal waveguides

We report on the fabrication and characterization of silicon photonic crystal waveguides completely embedded in silica. These waveguides offer a robust alternative to air-membranes and are fully compatible with monolithic integration. Despite the reduced refractive index contrast compared to the air-membranes, these waveguides offer a considerable operating range of approximately 10 nm in the 1550 nm window. While the reduced index contrast weakens the perturbations due to surface roughness, we measure losses of 35 +/- 3dB/cm compared to 12 +/- 3 dB/cm for nominally identical air-membranes. Numerical analysis reveals that the difference in loss results from the different mode distribution and group index of the respective waveguide modes. Radius disorder is used as a fitting parameter in the numerical simulations with the best fits found for disorder levels of 1.4 - 1.7 nm RMS, which attest to the high quality of our structures.

High-Q microfluidic cavities in silicon-based two-dimensional photonic crystal structures

We demonstrate postprocessed microfluidic double-heterostructure cavities in silicon-based photonic crystal slab waveguides. The cavity structure is realized by selective fluid infiltration of air holes using a glass microtip, resulting in a local change of the average refractive index of the photonic crystal. The microcavities are probed by evanescent coupling from a silica nanowire. An intrinsic quality factor of 57,000 has been derived from our measurements, representing what we believe to be the largest value observed in microfluidic photonic crystal cavities to date.

Reconfigurable microfluidic photonic crystal slab cavities

We demonstrate the spectral and spatial reconfigurability of photonic crystal double-heterostructure cavities in silicon by microfluidic infiltration of selected air holes. The lengths of the microfluidic cavities are changed by adjusting the region of infiltrated holes in steps of several microns. We systematically investigate the spectral signature of these cavities, showing high Q-factor resonances for a broad range of cavity lengths. The fluid can be removed by immersing the device in toluene, offering complete reconfigurability. Our cavity writing technique allows for tolerances in the infiltration process and provides flexibility as it can be employed at any time after photonic crystal fabrication.