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Ralaiarisoa M, Frisch J, Frégnaux M, Cacovich S, Yaïche A, Rousset J, Gorgoi M, Ceratti DR, Kodalle T, Roncoroni F, Guillemoles JF, Etcheberry A, Bouttemy M, Wilks RG, Bär M, Schulz P. Influence of X-Ray Irradiation During Photoemission Studies on Halide Perovskite-Based Devices. Small Methods 2023; 7:e2300458. [PMID: 37712197 DOI: 10.1002/smtd.202300458] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2023] [Revised: 07/31/2023] [Indexed: 09/16/2023]
Abstract
Metal halide perovskites (MHPs) are semiconductors with promising application in optoelectronic devices, particularly, in solar cell technologies. The chemical and electronic properties of MHPs at the surface and interfaces with adjacent layers dictate charge transfer within stacked devices and ultimately the efficiency of the latter. X-ray photoelectron spectroscopy is a powerful tool to characterize these material properties. However, the X-ray radiation itself can potentially affect the MHP and therefore jeopardize the reliability of the obtained information. In this work, the effect of X-ray irradiation is assessed on Cs0.05 MA0.15 FA0.8 Pb(I0.85 Br0.15 )3 (MA for CH3 NH3 , and FA for CH2 (NH2 )2 ) MHP thin-film samples in a half-cell device. There is a comparison of measurements acquired with synchrotron radiation and a conventional laboratory source for different times. Changes in composition and core levels binding energies are observed in both cases, indicating a modification of the chemical and electronic properties. The results suggest that changes observed over minutes with highly brilliant synchrotron radiation are likely occurring over hours when working with a lab-based source providing a lower photon flux. The possible degradation pathways are discussed, supported by steady-state photoluminescence analysis. The work stresses the importance of beam effect assessment at the beginning of XPS experiments of MHP samples.
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Affiliation(s)
- Maryline Ralaiarisoa
- Institut Photovoltaïque d'Île-de-France (IPVF), UMR 9006, CNRS, Ecole Polytechnique, IP Paris, Chimie Paristech, PSL, 18 Boulevard Thomas Gobert, Palaiseau, 91120, France
| | - Johannes Frisch
- Department of Interface Design, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Str. 15, 12489, Berlin, Germany
| | - Mathieu Frégnaux
- Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines, Université Paris-Saclay, CNRS, UMR 8180, 45 Avenue des États Unis, Versailles, 78000, France
| | - Stefania Cacovich
- Institut Photovoltaïque d'Île-de-France (IPVF), UMR 9006, CNRS, Ecole Polytechnique, IP Paris, Chimie Paristech, PSL, 18 Boulevard Thomas Gobert, Palaiseau, 91120, France
| | - Armelle Yaïche
- Électricité de France, Institut Photovoltaïque d'Île-de-France, 18 Boulevard Thomas Gobert, Palaiseau, 91120, France
| | - Jean Rousset
- Électricité de France, Institut Photovoltaïque d'Île-de-France, 18 Boulevard Thomas Gobert, Palaiseau, 91120, France
| | - Mihaela Gorgoi
- Energy Materials In-situ Laboratory Berlin (EMIL), Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Str. 15, 12489, Berlin, Germany
| | - Davide R Ceratti
- Institut Photovoltaïque d'Île-de-France (IPVF), UMR 9006, CNRS, Ecole Polytechnique, IP Paris, Chimie Paristech, PSL, 18 Boulevard Thomas Gobert, Palaiseau, 91120, France
- CNRS, Collège de France, UMR 7574, Chimie de la Matière Condensée de Paris, Sorbonne Université, Paris, 75005, France
| | - Tim Kodalle
- Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, 94720, USA
| | - Fabrice Roncoroni
- Molecular Foundry, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA, 94720, USA
| | - Jean-François Guillemoles
- Institut Photovoltaïque d'Île-de-France (IPVF), UMR 9006, CNRS, Ecole Polytechnique, IP Paris, Chimie Paristech, PSL, 18 Boulevard Thomas Gobert, Palaiseau, 91120, France
| | - Arnaud Etcheberry
- Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines, Université Paris-Saclay, CNRS, UMR 8180, 45 Avenue des États Unis, Versailles, 78000, France
| | - Muriel Bouttemy
- Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines, Université Paris-Saclay, CNRS, UMR 8180, 45 Avenue des États Unis, Versailles, 78000, France
| | - Regan G Wilks
- Department of Interface Design, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Str. 15, 12489, Berlin, Germany
- Energy Materials In-situ Laboratory Berlin (EMIL), Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Str. 15, 12489, Berlin, Germany
| | - Marcus Bär
- Department of Interface Design, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Str. 15, 12489, Berlin, Germany
- Energy Materials In-situ Laboratory Berlin (EMIL), Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Str. 15, 12489, Berlin, Germany
- Helmholtz Institute Erlangen-Nürnberg for Renewable Energy (HIERN), Albert-Einstein-Str. 15, 12489, Berlin, Germany
- Department of Chemistry and Pharmacy, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Egerlandstr. 3, 91058, Erlangen, Germany
| | - Philip Schulz
- Institut Photovoltaïque d'Île-de-France (IPVF), UMR 9006, CNRS, Ecole Polytechnique, IP Paris, Chimie Paristech, PSL, 18 Boulevard Thomas Gobert, Palaiseau, 91120, France
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2
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Cacovich S, Dally P, Vidon G, Legrand M, Gbegnon S, Rousset J, Puel JB, Guillemoles JF, Schulz P, Bouttemy M, Etcheberry A. In-Depth Chemical and Optoelectronic Analysis of Triple-Cation Perovskite Thin Films by Combining XPS Profiling and PL Imaging. ACS Appl Mater Interfaces 2022; 14:34228-34237. [PMID: 35245028 DOI: 10.1021/acsami.1c22286] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The investigation of chemical and optoelectronic properties of halide perovskite layers and associated interfaces is crucial to harness the full potential of perovskite solar cells. Depth-profiling photoemission spectroscopy is a primary tool to study the chemical properties of halide perovskite layers at different scales from the surface to the bulk. The technique employs ionic argon beam thinning that provides accurate layer thicknesses. However, there is an urgent need to corroborate the reliability of data on chemical properties of halide perovskite thin films to better assess their stability. The present study addresses the question of the Ar+ sputtering thinning on the surface chemical composition and the optoelectronic properties of the triple-cation mixed-halide perovskite by combining X-ray photoemission spectroscopy (XPS) and photoluminescence (PL) spectroscopy. First, XPS profiling is performed by Ar+ beam sputtering on a half-cell: glass/FTO/c-TiO2/perovskite. The resulting profiles show a very homogeneous and reproducible element distribution until near the buried interface; therefore, the layer is considered as quasihomogeneous all over its thickness, and the sputtering process is stable. Second, we evaluated a set of thinned perovskite layers representative of selected steps along the profile by means of PL imaging optical measurements in both steady-state and transient regimes to assess possible perturbation of the optical properties from the surface to bulk. Obtained PL spectra inside the resulting craters show no peak shift nor phase segregation. Accordingly, the transient PL measurements do not reveal any changes of the surface recombination rate in the sputtered areas. This demonstrates that there is no cumulative effect of sputtering nor drastic chemical and optoelectronic modifications, validating the determination of the in-depth composition of the perovskite layer. Combining XPS profiling with PL characterization can be a precise tool to be applied for an extensive study of the multiple layers and mixed organic/inorganic interfaces of photovoltaic devices.
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Affiliation(s)
- Stefania Cacovich
- CNRS, Institut Photovoltaïque d'Île de France (IPVF), UMR 9006, 18 boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Pia Dally
- Institut Photovoltaïque d'Île de France (IPVF), 18 boulevard Thomas Gobert, 91120 Palaiseau, France
- Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines, Université Paris-Saclay, CNRS, UMR 8180, 45 avenue des Etats-Unis, 78035 Versailles CEDEX, France
| | - Guillaume Vidon
- Institut Photovoltaïque d'Île de France (IPVF), 18 boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Marie Legrand
- Institut Photovoltaïque d'Île de France (IPVF), 18 boulevard Thomas Gobert, 91120 Palaiseau, France
- EDF R&D, Institut Photovoltaïque d'Île de France (IPVF), 18 boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Stéphanie Gbegnon
- Institut Photovoltaïque d'Île de France (IPVF), 18 boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Jean Rousset
- Institut Photovoltaïque d'Île de France (IPVF), 18 boulevard Thomas Gobert, 91120 Palaiseau, France
- EDF R&D, Institut Photovoltaïque d'Île de France (IPVF), 18 boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Jean-Baptiste Puel
- Institut Photovoltaïque d'Île de France (IPVF), 18 boulevard Thomas Gobert, 91120 Palaiseau, France
- EDF R&D, Institut Photovoltaïque d'Île de France (IPVF), 18 boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Jean-François Guillemoles
- CNRS, Institut Photovoltaïque d'Île de France (IPVF), UMR 9006, 18 boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Philip Schulz
- CNRS, Institut Photovoltaïque d'Île de France (IPVF), UMR 9006, 18 boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Muriel Bouttemy
- Institut Photovoltaïque d'Île de France (IPVF), 18 boulevard Thomas Gobert, 91120 Palaiseau, France
- Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines, Université Paris-Saclay, CNRS, UMR 8180, 45 avenue des Etats-Unis, 78035 Versailles CEDEX, France
| | - Arnaud Etcheberry
- Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin-en-Yvelines, Université Paris-Saclay, CNRS, UMR 8180, 45 avenue des Etats-Unis, 78035 Versailles CEDEX, France
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L'héronde M, Bouttemy M, Mercier‐Bion F, Neff D, Apchain E, Etcheberry A, Dillmann P. X‐ray photoelectron spectroscopy characterization of Cu compounds for the development of organic protection treatments dedicated to heritage Cu objects preservation. SURF INTERFACE ANAL 2020. [DOI: 10.1002/sia.6850] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Maëva L'héronde
- LAPA‐IRAMAT, NIMBE, CEA, CNRS, Université Paris‐Saclay, CEA Saclay Gif‐sur‐Yvette France
- Institut Lavoisier de Versailles (ILV), Université de Versailles Saint‐Quentin‐en‐Yvelines, CNRS, Université Paris‐Saclay Versailles France
- IPANEMA, CNRS, Ministère de la Culture, Université de Versailles Saint‐Quentin‐en‐Yvelines, Université Paris‐Saclay Gif‐sur‐Yvette France
| | - Muriel Bouttemy
- Institut Lavoisier de Versailles (ILV), Université de Versailles Saint‐Quentin‐en‐Yvelines, CNRS, Université Paris‐Saclay Versailles France
| | - Florence Mercier‐Bion
- LAPA‐IRAMAT, NIMBE, CEA, CNRS, Université Paris‐Saclay, CEA Saclay Gif‐sur‐Yvette France
| | - Delphine Neff
- LAPA‐IRAMAT, NIMBE, CEA, CNRS, Université Paris‐Saclay, CEA Saclay Gif‐sur‐Yvette France
| | - Emilande Apchain
- LAPA‐IRAMAT, NIMBE, CEA, CNRS, Université Paris‐Saclay, CEA Saclay Gif‐sur‐Yvette France
| | - Arnaud Etcheberry
- Institut Lavoisier de Versailles (ILV), Université de Versailles Saint‐Quentin‐en‐Yvelines, CNRS, Université Paris‐Saclay Versailles France
| | - Philippe Dillmann
- LAPA‐IRAMAT, NIMBE, CEA, CNRS, Université Paris‐Saclay, CEA Saclay Gif‐sur‐Yvette France
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Bourlier Y, Bouttemy M, Fregnaux M, Patard O, Gamarra P, Piotrowicz S, Delage S, Etcheberry A. In‐depth analysis of InAlN/GaN HEMT heterostructure after annealing using angle‐resolved X‐ray photoelectron spectroscopy. SURF INTERFACE ANAL 2020. [DOI: 10.1002/sia.6857] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Yoan Bourlier
- Institut Lavoisier de Versailles (ILV) Université de Versailles Saint‐Quentin en Yvelines, Université Paris‐Saclay CNRS Versailles France
| | - Muriel Bouttemy
- Institut Lavoisier de Versailles (ILV) Université de Versailles Saint‐Quentin en Yvelines, Université Paris‐Saclay CNRS Versailles France
| | - Mathieu Fregnaux
- Institut Lavoisier de Versailles (ILV) Université de Versailles Saint‐Quentin en Yvelines, Université Paris‐Saclay CNRS Versailles France
| | - Olivier Patard
- Microelectronic GaN, III‐V Lab Campus Polytechnique Palaiseau Cedex France
| | - Piero Gamarra
- Microelectronic GaN, III‐V Lab Campus Polytechnique Palaiseau Cedex France
| | | | - Sylvain Delage
- Microelectronic GaN, III‐V Lab Campus Polytechnique Palaiseau Cedex France
| | - Arnaud Etcheberry
- Institut Lavoisier de Versailles (ILV) Université de Versailles Saint‐Quentin en Yvelines, Université Paris‐Saclay CNRS Versailles France
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5
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Béchu S, Bouttemy M, Vigneron J, Lincot D, Guillemoles J, Etcheberry A. Evolution of Cu(In,Ga)Se
2
surfaces under water immersion monitored by X‐ray photoelectron spectroscopy. SURF INTERFACE ANAL 2020. [DOI: 10.1002/sia.6896] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Solène Béchu
- Institut Lavoisier de Versailles (ILV) Université Paris‐Saclay, CNRS‐UVSQ Versailles France
| | - Muriel Bouttemy
- Institut Lavoisier de Versailles (ILV) Université Paris‐Saclay, CNRS‐UVSQ Versailles France
| | - Jackie Vigneron
- Institut Lavoisier de Versailles (ILV) Université Paris‐Saclay, CNRS‐UVSQ Versailles France
| | | | | | - Arnaud Etcheberry
- Institut Lavoisier de Versailles (ILV) Université Paris‐Saclay, CNRS‐UVSQ Versailles France
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Cacovich S, Messou D, Bercegol A, Béchu S, Yaiche A, Shafique H, Rousset J, Schulz P, Bouttemy M, Lombez L. Light-Induced Passivation in Triple Cation Mixed Halide Perovskites: Interplay between Transport Properties and Surface Chemistry. ACS Appl Mater Interfaces 2020; 12:34784-34794. [PMID: 32635710 DOI: 10.1021/acsami.0c06844] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Mixed halide perovskites have attracted a strong interest in the photovoltaic community as a result of their high power conversion efficiency and the solid opportunity to realize low-cost and industry-scalable technology. Light soaking represents one of the most promising approaches to reduce non-radiative recombination processes and thus to optimize device performances. Here, we investigate the effects of 1 sun illumination on state-of-the-art triple cation halide perovskite thin films Cs0.05(MA0.14, FA0.86)0.95 Pb (I0.84, Br0.16)3 by a combined optical and chemical characterization. Competitive passivation and degradation effects on perovskite transport properties have been analyzed by spectrally and time-resolved quantitative imaging luminescence analysis and by X-ray photoemission spectroscopy (XPS). We notice a clear improvement of the optoelectronic properties of the material, with a increase of the quasi fermi level splitting and a corresponding decrease of methylammonium MA+ for short (up to 1 h) light soaking time. However, after 5 h of light soaking, phase segregation and in-depth oxygen penetration lead to a decrease of the charge mobility.
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Affiliation(s)
- Stefania Cacovich
- IPVF, Institut Photovoltaïque d'Ile-de-France, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
- École Polytechnique, IPVF, UMR 9006, CNRS, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Davina Messou
- IPVF, Institut Photovoltaïque d'Ile-de-France, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
- Université Paris-Saclay, UVSQ, CNRS, UMR 8180, Institut Lavoisier de Versailles, 78000 Versailles, France
| | - Adrien Bercegol
- IPVF, Institut Photovoltaïque d'Ile-de-France, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
- EDF R&D, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Solène Béchu
- IPVF, Institut Photovoltaïque d'Ile-de-France, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
- Université Paris-Saclay, UVSQ, CNRS, UMR 8180, Institut Lavoisier de Versailles, 78000 Versailles, France
| | - Armelle Yaiche
- IPVF, Institut Photovoltaïque d'Ile-de-France, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
- EDF R&D, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Hamza Shafique
- École Polytechnique, IPVF, UMR 9006, CNRS, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Jean Rousset
- IPVF, Institut Photovoltaïque d'Ile-de-France, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
- EDF R&D, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Philip Schulz
- IPVF, Institut Photovoltaïque d'Ile-de-France, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
- École Polytechnique, IPVF, UMR 9006, CNRS, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
| | - Muriel Bouttemy
- IPVF, Institut Photovoltaïque d'Ile-de-France, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
- Université Paris-Saclay, UVSQ, CNRS, UMR 8180, Institut Lavoisier de Versailles, 78000 Versailles, France
| | - Laurent Lombez
- IPVF, Institut Photovoltaïque d'Ile-de-France, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
- École Polytechnique, IPVF, UMR 9006, CNRS, 18 Boulevard Thomas Gobert, 91120 Palaiseau, France
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Béchu S, Aureau D, Vigneron J, Gonçalves AM, Frégnaux M, Bouttemy M, Etcheberry A. Stoichiometry loss induced by ionic bombardment of InP surfaces: A challenge for electrochemistry combined with XPS. Electrochem commun 2020. [DOI: 10.1016/j.elecom.2020.106766] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/24/2022] Open
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Bouttemy M, Grousset S, Mercier-Bion F, Neff D, Etcheberry A, Dillmann P. Multitechnique investigation of sulfur phases in the corrosion product layers of iron corroded in long-term anoxic conditions: From micrometer to nanometer scale. SURF INTERFACE ANAL 2018. [DOI: 10.1002/sia.6441] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2022]
Affiliation(s)
- Muriel Bouttemy
- ILV, Université de Versailles Saint-Quentin en Yvelines, Université Paris-Saclay; 78035 Versailles France
| | - Sophie Grousset
- LAPA-IRAMAT, NIMBE, CEA, CNRS, Université Paris-Saclay, CEA Saclay; 91191 Gif-sur-Yvette France
- IRSN, PRP-DGE/SRTG/LETIS; B.P. 17 92262 Fontenay aux Roses Cedex France
- Andra, Direction de la recherche et développement; 1-7 rue Jean-Monnet 92298 Châtenay-Malabry Cedex France
| | - Florence Mercier-Bion
- LAPA-IRAMAT, NIMBE, CEA, CNRS, Université Paris-Saclay, CEA Saclay; 91191 Gif-sur-Yvette France
| | - Delphine Neff
- LAPA-IRAMAT, NIMBE, CEA, CNRS, Université Paris-Saclay, CEA Saclay; 91191 Gif-sur-Yvette France
| | - Arnaud Etcheberry
- ILV, Université de Versailles Saint-Quentin en Yvelines, Université Paris-Saclay; 78035 Versailles France
| | - Philippe Dillmann
- LAPA-IRAMAT, NIMBE, CEA, CNRS, Université Paris-Saclay, CEA Saclay; 91191 Gif-sur-Yvette France
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Almosni S, Delamarre A, Jehl Z, Suchet D, Cojocaru L, Giteau M, Behaghel B, Julian A, Ibrahim C, Tatry L, Wang H, Kubo T, Uchida S, Segawa H, Miyashita N, Tamaki R, Shoji Y, Yoshida K, Ahsan N, Watanabe K, Inoue T, Sugiyama M, Nakano Y, Hamamura T, Toupance T, Olivier C, Chambon S, Vignau L, Geffroy C, Cloutet E, Hadziioannou G, Cavassilas N, Rale P, Cattoni A, Collin S, Gibelli F, Paire M, Lombez L, Aureau D, Bouttemy M, Etcheberry A, Okada Y, Guillemoles JF. Material challenges for solar cells in the twenty-first century: directions in emerging technologies. Sci Technol Adv Mater 2018; 19:336-369. [PMID: 29707072 PMCID: PMC5917436 DOI: 10.1080/14686996.2018.1433439] [Citation(s) in RCA: 30] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2017] [Revised: 01/15/2018] [Accepted: 01/24/2018] [Indexed: 05/23/2023]
Abstract
Photovoltaic generation has stepped up within the last decade from outsider status to one of the important contributors of the ongoing energy transition, with about 1.7% of world electricity provided by solar cells. Progress in materials and production processes has played an important part in this development. Yet, there are many challenges before photovoltaics could provide clean, abundant, and cheap energy. Here, we review this research direction, with a focus on the results obtained within a Japan-French cooperation program, NextPV, working on promising solar cell technologies. The cooperation was focused on efficient photovoltaic devices, such as multijunction, ultrathin, intermediate band, and hot-carrier solar cells, and on printable solar cell materials such as colloidal quantum dots.
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Affiliation(s)
- Samy Almosni
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
| | - Amaury Delamarre
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
| | - Zacharie Jehl
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
- Okadalab, Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Tokyo, Japan
| | - Daniel Suchet
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
- Okadalab, Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Tokyo, Japan
| | | | - Maxime Giteau
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
- Okadalab, Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Tokyo, Japan
| | - Benoit Behaghel
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- IPVF, UMR CNRS 9006, Palaiseau, France
- Centre for Nanoscience and Nanotechnology (C2N), CNRS, University Paris-Sud/Paris-Saclay, Palaiseau, France
| | - Anatole Julian
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
| | - Camille Ibrahim
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
| | - Léa Tatry
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
| | - Haibin Wang
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
| | - Takaya Kubo
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
| | - Satoshi Uchida
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Komaba Organization for Educational Excellence, Faculty of Arts and Sciences, The University of Tokyo, Tokyo, Japan
| | - Hiroshi Segawa
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Department of General Systems Studies, Graduate School of Arts and Sciences, The University of Tokyo, Tokyo, Japan
| | - Naoya Miyashita
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
- Okadalab, Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Tokyo, Japan
| | - Ryo Tamaki
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
- Okadalab, Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Tokyo, Japan
| | - Yasushi Shoji
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
- Okadalab, Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Tokyo, Japan
| | - Katsuhisa Yoshida
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
- Okadalab, Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Tokyo, Japan
| | - Nazmul Ahsan
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
- Okadalab, Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Tokyo, Japan
| | - Kentaro Watanabe
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
| | - Tomoyuki Inoue
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
| | - Masakazu Sugiyama
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
| | - Yoshiaki Nakano
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
| | - Tomofumi Hamamura
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Department of General Systems Studies, Graduate School of Arts and Sciences, The University of Tokyo, Tokyo, Japan
- University of Bordeaux, Institut des Sciences Moléculaires (ISM), CNRS (UMR 5255), Talence Cédex, France
| | - Thierry Toupance
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- University of Bordeaux, Institut des Sciences Moléculaires (ISM), CNRS (UMR 5255), Talence Cédex, France
| | - Céline Olivier
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- University of Bordeaux, Institut des Sciences Moléculaires (ISM), CNRS (UMR 5255), Talence Cédex, France
| | - Sylvain Chambon
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- University of Bordeaux, IMS, CNRS UMR 5218, Talence, France
| | - Laurence Vignau
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- University of Bordeaux, IMS, CNRS UMR 5218, Talence, France
| | - Camille Geffroy
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Université de Bordeaux, Laboratoire de Chimie des Polymères Organiques (LCPO), UMR 5629, ENSCBP, IPB, Pessac Cedex, France
| | - Eric Cloutet
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Université de Bordeaux, Laboratoire de Chimie des Polymères Organiques (LCPO), UMR 5629, ENSCBP, IPB, Pessac Cedex, France
| | - Georges Hadziioannou
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Université de Bordeaux, Laboratoire de Chimie des Polymères Organiques (LCPO), UMR 5629, ENSCBP, IPB, Pessac Cedex, France
| | - Nicolas Cavassilas
- Aix Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334, Marseille, France
| | - Pierre Rale
- Centre for Nanoscience and Nanotechnology (C2N), CNRS, University Paris-Sud/Paris-Saclay, Palaiseau, France
| | - Andrea Cattoni
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Centre for Nanoscience and Nanotechnology (C2N), CNRS, University Paris-Sud/Paris-Saclay, Palaiseau, France
| | - Stéphane Collin
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Centre for Nanoscience and Nanotechnology (C2N), CNRS, University Paris-Sud/Paris-Saclay, Palaiseau, France
| | | | | | - Laurent Lombez
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- IPVF, UMR CNRS 9006, Palaiseau, France
| | - Damien Aureau
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin (UVSQ), Université Paris-Saclay, Versailles, France
| | - Muriel Bouttemy
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin (UVSQ), Université Paris-Saclay, Versailles, France
| | - Arnaud Etcheberry
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Institut Lavoisier de Versailles (ILV), Université de Versailles Saint-Quentin (UVSQ), Université Paris-Saclay, Versailles, France
| | - Yoshitaka Okada
- NextPV, LIA RCAST-CNRS, The University of Tokyo, Tokyo, Japan
- Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo, Japan
- Okadalab, Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Tokyo, Japan
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10
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Aureau D, Frégnaux M, Njel C, Vigneron J, Bouttemy M, Gonçalves AM, Etcheberry A. XPS study during a soft and progressive sputtering of a monolayer on indium phosphide by argon cluster bombardment. SURF INTERFACE ANAL 2018. [DOI: 10.1002/sia.6436] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Damien Aureau
- Institut Lavoisier de Versailles; Université de Versailles, CEFS2 Versailles, UMR 8180 CNRS-UVSQ; 45 Avenue des Etats Unis 78035 Versailles France
| | - Mathieu Frégnaux
- Institut Lavoisier de Versailles; Université de Versailles, CEFS2 Versailles, UMR 8180 CNRS-UVSQ; 45 Avenue des Etats Unis 78035 Versailles France
| | - Christian Njel
- Institut des Sciences Analytiques et de Physico-chimie pour l'Environnement et les Materiaux; UMR 5254 Pau Aquitaine France
| | - Jackie Vigneron
- Institut Lavoisier de Versailles; Université de Versailles, CEFS2 Versailles, UMR 8180 CNRS-UVSQ; 45 Avenue des Etats Unis 78035 Versailles France
| | - Muriel Bouttemy
- Institut Lavoisier de Versailles; Université de Versailles, CEFS2 Versailles, UMR 8180 CNRS-UVSQ; 45 Avenue des Etats Unis 78035 Versailles France
| | - Anne-Marie Gonçalves
- Institut Lavoisier de Versailles; Université de Versailles, CEFS2 Versailles, UMR 8180 CNRS-UVSQ; 45 Avenue des Etats Unis 78035 Versailles France
| | - Arnaud Etcheberry
- Institut Lavoisier de Versailles; Université de Versailles, CEFS2 Versailles, UMR 8180 CNRS-UVSQ; 45 Avenue des Etats Unis 78035 Versailles France
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11
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Colombara D, Werner F, Schwarz T, Cañero Infante I, Fleming Y, Valle N, Spindler C, Vacchieri E, Rey G, Guennou M, Bouttemy M, Manjón AG, Peral Alonso I, Melchiorre M, El Adib B, Gault B, Raabe D, Dale PJ, Siebentritt S. Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers. Nat Commun 2018; 9:826. [PMID: 29483504 PMCID: PMC5827571 DOI: 10.1038/s41467-018-03115-0] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2017] [Accepted: 01/22/2018] [Indexed: 11/08/2022] Open
Abstract
Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is possible due to engineered gallium depth gradients and alkali extrinsic doping. Sodium is well known to impede interdiffusion of indium and gallium in polycrystalline Cu(In,Ga)Se2 films, thus influencing the gallium depth distribution. Here, however, sodium is shown to have the opposite effect in monocrystalline gallium-free CuInSe2 grown on GaAs substrates. Gallium in-diffusion from the substrates is enhanced when sodium is incorporated into the film, leading to Cu(In,Ga)Se2 and Cu(In,Ga)3Se5 phase formation. These results show that sodium does not decrease per se indium and gallium interdiffusion. Instead, it is suggested that sodium promotes indium and gallium intragrain diffusion, while it hinders intergrain diffusion by segregating at grain boundaries. The deeper understanding of dopant-mediated atomic diffusion mechanisms should lead to more effective chemical and electrical passivation strategies, and more efficient solar cells.
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Affiliation(s)
- Diego Colombara
- University of Luxembourg-Physics and Materials Science Research Unit. 41, rue du Brill, L-4422, Belvaux, Luxembourg.
- International Iberian Nanotechnology Laboratory-Quantum Materials Science and Technology Department, Avenida Mestre Jose Veiga, 4715, Braga, Portugal.
| | - Florian Werner
- University of Luxembourg-Physics and Materials Science Research Unit. 41, rue du Brill, L-4422, Belvaux, Luxembourg
| | - Torsten Schwarz
- Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237, Düsseldorf, Germany
| | - Ingrid Cañero Infante
- CNRS, Institut des Nanotechnologies de Lyon, CNRS UMR5270 ECL INSA UCBL CPE, 7, Avenue Jean Capelle, 69621, Villeurbanne, France
| | - Yves Fleming
- Luxembourg Institute of Science and Technology-Materials Research and Technology Department, 41, rue du Brill, L-4422, Belvaux, Luxembourg
| | - Nathalie Valle
- Luxembourg Institute of Science and Technology-Materials Research and Technology Department, 41, rue du Brill, L-4422, Belvaux, Luxembourg
| | - Conrad Spindler
- University of Luxembourg-Physics and Materials Science Research Unit. 41, rue du Brill, L-4422, Belvaux, Luxembourg
| | - Erica Vacchieri
- Ansaldo Energia, Via Nicola Lorenzi, 8, 16152, Genova, Italy
| | - Germain Rey
- University of Luxembourg-Physics and Materials Science Research Unit. 41, rue du Brill, L-4422, Belvaux, Luxembourg
| | - Mael Guennou
- Luxembourg Institute of Science and Technology-Materials Research and Technology Department, 41, rue du Brill, L-4422, Belvaux, Luxembourg
| | - Muriel Bouttemy
- Université de Verailles-Institut Lavoisier, 45 avenue des États-Unis, 78035, Versailles, France
| | - Alba Garzón Manjón
- Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237, Düsseldorf, Germany
| | - Inmaculada Peral Alonso
- University of Luxembourg-Physics and Materials Science Research Unit. 41, rue du Brill, L-4422, Belvaux, Luxembourg
| | - Michele Melchiorre
- University of Luxembourg-Physics and Materials Science Research Unit. 41, rue du Brill, L-4422, Belvaux, Luxembourg
| | - Brahime El Adib
- Luxembourg Institute of Science and Technology-Materials Research and Technology Department, 41, rue du Brill, L-4422, Belvaux, Luxembourg
| | - Baptiste Gault
- Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237, Düsseldorf, Germany
| | - Dierk Raabe
- Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237, Düsseldorf, Germany
| | - Phillip J Dale
- University of Luxembourg-Physics and Materials Science Research Unit. 41, rue du Brill, L-4422, Belvaux, Luxembourg
| | - Susanne Siebentritt
- University of Luxembourg-Physics and Materials Science Research Unit. 41, rue du Brill, L-4422, Belvaux, Luxembourg
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12
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Gallanti S, Chassaing E, Bouttemy M, Etcheberry A, Lincot D, Naghavi N. Photoelectrochemical deposition of ZnO films via nitrate ions reduction in the presence of thiourea on p-type Cu(In,Ga)Se2 semiconducting electrodes for photovoltaic applications. J APPL ELECTROCHEM 2017. [DOI: 10.1007/s10800-017-1119-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/18/2022]
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13
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Schneider N, Bouttemy M, Genevée P, Lincot D, Donsanti F. Deposition of ultra thin CuInS₂ absorber layers by ALD for thin film solar cells at low temperature (down to 150 °C). Nanotechnology 2015; 26:054001. [PMID: 25586382 DOI: 10.1088/0957-4484/26/5/054001] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Two new processes for the atomic layer deposition of copper indium sulfide (CuInS₂) based on the use of two different sets of precursors are reported. Metal chloride precursors (CuCl, InCl₃) in combination with H2S imply relatively high deposition temperature (Tdep = 380 °C), and due to exchange reactions, CuInS₂ stoechiometry was only achieved by depositing In₂S3 layers on a CuxS film. However, the use of acac- metal precursors (Cu(acac)₂, In(acac)₃) allows the direct deposition of CuInS₂ at temperature as low as 150 °C, involving in situ copper-reduction, exchange reaction and diffusion processes. The morphology, crystallographic structure, chemical composition and optical band gap of thin films were investigated using scanning electronic microscope, x-ray diffraction under grazing incidence conditions, x-ray fluorescence, energy dispersive spectrometry, secondary ion mass spectrometry, x-ray photoelectron spectroscopy and UV-vis spectroscopy. Films were implemented as ultra-thin absorbers in a typical CIS-solar cell architecture and allowed conversion efficiencies up to 2.8%.
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Affiliation(s)
- Nathanaelle Schneider
- Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), UMR 7174 EDF-CNRS-Chimie ParisTech, 6 quai Watier, F-78401, Chatou, France
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14
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Gonçalves AM, Bouttemy M, El Ali O, Eb A, Mathieu C, Vigneron J, Etcheberry A, White R, Mack P. An ARXPS study of the passivating layer formed on III-V surface by an innovative anodic treatment in liquid ammonia. SURF INTERFACE ANAL 2010. [DOI: 10.1002/sia.3547] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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15
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Wang M, Simon N, Charrier G, Bouttemy M, Etcheberry A, Li M, Boukherroub R, Szunerits S. Distinction between surface hydroxyl and ether groups on boron-doped diamond electrodes using a chemical approach. Electrochem commun 2010. [DOI: 10.1016/j.elecom.2009.12.029] [Citation(s) in RCA: 43] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/25/2022] Open
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16
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Wang M, Simon N, Decorse-Pascanut C, Bouttemy M, Etcheberry A, Li M, Boukherroub R, Szunerits S. Comparison of the chemical composition of boron-doped diamond surfaces upon different oxidation processes. Electrochim Acta 2009. [DOI: 10.1016/j.electacta.2009.05.037] [Citation(s) in RCA: 57] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
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