Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN

In this study, AlN epilayers were grown by ammonia-assisted molecular beam epitaxy on 3 nm h-BN grown on c-sapphire substrates. Their structural properties were investigated by comparing as-grown and postgrowth annealed layers. The role of annealing on the crystalline quality and surface morphology was studied as a function of AlN thickness and the annealing duration and temperature. Optimum annealing conditions were identified. The results of X-ray diffraction showed that optimization of the annealing recipe led to a significant reduction in the symmetric (0 0 0 2) and skew symmetric (1 0 -1 1) reflections, which was associated with a reduction in edge and mixed threading dislocation densities (TDDs). Furthermore, the impact on the crystalline structure of AlN and its surface was studied, and the results showed a transition from a surface with high roughness to a smoother surface morphology with a significant reduction in roughness. In addition, the annealing duration was increased at 1650 °C to further understand the impact on both AlN and h-BN, and the results showed a diffusion interplay between AlN and h-BN. Finally, an AlN layer was regrown on the top of an annealed template, which led to large terraces with atomic steps and low roughness.

Correlative investigation of Mg doping in GaN layers grown at different temperatures by atom probe tomography and off-axis electron holography

Correlation between off-axis electron holography and atom probe tomography (APT) provides morphological, chemical and electrical information about Mg doping (p-type) in gallium nitride (GaN) layers that have been grown at different temperatures at a nanometric scale. APT allows access to the three-dimensional distribution of atoms and their chemical nature. In particular, this technique allows visualisation of the Mg-rich clusters observed in p-doped GaN layers grown by metal-organic chemical vapour deposition. As the layer growth temperature increases, the cluster density decreases but their size indicted by the number of atoms increases. Moreover, APT reveals that threading dislocations are decorated with Mg atoms. Off-axis electron holography provides complementary information about the electrical activity of the Mg doping. As only a small fraction of dopant atoms are ionised at room temperature, this fraction is increased by annealing the specimen to 400 °C in situ in a transmission electron microscope (TEM). A strong reduction of the dopant electrical activity is observed for increases in the layer growth temperature. The correlation of APT with TEM-based techniques was shown to be a unique approach in order to investigate how the growth temperature affects both the chemical distribution and electrical activity of Mg dopant atoms.

Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates

The last two decades have shown an increasing need for GaN-based laser diodes (LDs), which are currently only grown on bulk GaN substrates, which remain to date very expensive and/or only available in small sizes. The ever growing laser market will expand in the coming years, thanks to the development of automotive laser lighting, high-speed Li-Fi optical data transmission, LiDAR sensing for autonomous vehicles and smart cities, head-up displays, and AR/VR systems, in addition to biomedical and further industrial applications. These emerging technologies demand for mass-production of GaN-based lasers to be produced on large-size, low-cost, and industrially compatible substrates. To address this issue, we demonstrate the first electrically injected semipolar 440 nm LD on high-quality and low-defect-density (11-22) GaN templates grown on scalable and low-cost sapphire substrates. The LDs exhibit a threshold current density of 17 kA/cm², a single facet output power of more than 200 mW at 2 A with a slope efficiency of 0.85 W/A, and a TE polarization having a ratio of 97.6%. These results enable the advancement of ultra-low-cost LDs while benefiting from the inherent advantages of semipolar GaN properties.

Al5+αSi5+δN12, a new Nitride compound

The family of III-Nitride semiconductors has been under intensive research for almost 30 years and has revolutionized lighting applications at the dawn of the 21st century. However, besides the developments and applications achieved, nitride alloys continue to fuel the quest for novel materials and applications. We report on the synthesis of a new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350 °C and 1550 °C. The structure and stoichiometry of this compound are investigated by high resolution transmission electron microscopy (TEM) techniques and energy dispersive X-Ray (EDX) spectroscopy. Results are supported by density functional theory (DFT) calculations. The identified structure is a derivative of the parent wurtzite AlN crystal where the anion sublattice is fully occupied by N atoms and the cation sublattice is the stacking of 2 different planes along <0001>: The first one exhibits a ×3 periodicity along <11–20> with 1/3 of the sites being vacant. The rest of the sites in the cation sublattice are occupied by an equal number of Si and Al atoms. Assuming a semiconducting alloy, a range of stoichiometries is proposed, Al_5+αSi_5+δN₁₂ with α being between −2/3 and 1/4 and δ between 0 and 3/4.

Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition

We report on the influence of a capping layer on the photoluminescence properties of self-assembled GaN quantum dots grown on an Al(0.5)Ga(0.5)N template. Self-assembled GaN quantum dots show a large quantum confined Stark shift and long carrier recombination time due to strong built-in spontaneous and piezoelectric polarization fields. Nevertheless, owing to strong carrier localization and suppressed nonradiative processes, these quantum dots have a high-quantum efficiency even at room temperature. Here, we show that the capping thickness has an important role on the optical properties of the GaN quantum dots. The radiative and nonradiative recombination processes of quantum dots are strongly affected by adjusting the capping thickness, and the GaN quantum dots with 12 monolayers-thick Al(0.5)Ga(0.5)N capping layer show a remarkably high internal quantum efficiency of more than 80% at room temperature. We also studied photoluminescence quenching and enhancement for surface (uncapped) quantum dots caused by photoadsorption and photodesorption of oxygen.

Filtering of Defects in Semipolar (11-22) GaN Using 2-Steps Lateral Epitaxial Overgrowth

Good-quality (11-22) semipolar GaN sample was obtained using epitaxial lateral overgrowth. The growth conditions were chosen to enhance the growth rate along the [0001] inclined direction. Thus, the coalescence boundaries stop the propagation of basal stacking faults. The faults filtering and the improvement of the crystalline quality were attested by transmission electron microscopy and low temperature photoluminescence. The temperature dependence of the luminescence polarization under normal incidence was also studied.

Anisotropic chemical etching of semipolar [1011]/[101+1] ZnO crystallographic planes: polarity versus dangling bonds

ZnO thin films grown by metal-organic vapor phase epitaxy along the nonpolar [formula: see text] direction and exhibiting semipolar [formula: see text] facets have been chemically etched with HCl. In order to get an insight into the influence of the ZnO wurtzite structure in the chemical reactivity of the material, Kelvin probe microscopy and convergent beam electron diffraction have been employed to unambiguously determine the absolute polarity of the facets, showing that [formula: see text] facets are unstable upon etching in an HCl solution and transform into [formula: see text] planes. In contrast, [formula: see text] facets undergo homogeneous chemical etching perpendicular to the initial crystallographic plane. The observed etching behavior has been explained in terms of surface oxygen dangling bond density, suggesting that the macroscopic polarity plays a secondary role in the etching process.