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Mihalyuk AN, Bondarenko LV, Tupchaya AY, Gruznev DV, Solovova NY, Golyashov VA, Tereshchenko OE, Okuda T, Kimura A, Eremeev SV, Zotov AV, Saranin AA. Emergence of quasi-1D spin-polarized states in ultrathin Bi films on InAs(111)A for spintronics applications. Nanoscale 2024; 16:1272-1281. [PMID: 38126765 DOI: 10.1039/d3nr03830k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
The discovery, characterization, and control of heavy-fermion low-dimensional materials are central to nanoscience since quantum phenomena acquire an exotic and highly tunable character. In this work, through a variety of comprehensive experimental and theoretical techniques, it was observed and predicted that the synthesis of ultrathin Bi films on the InAs(111)A surface produces quasi-one-dimensional spin-polarized states, providing a platform for the realization of a unique spin-transport regime in the system. Scanning tunneling microscopy and low-energy electron diffraction measurements revealed that the InAs(111)A substrate facilitates the formation of the Bi-dimer phase of 2√3 × 3 periodicity with an admixture of the Bi-bilayer phase under submonolayer Bi deposition. X-ray photoelectron spectroscopy (XPS) measurements have shown the chemical stability of the Bi-induced phases, while spin and angle resolved photoemission spectroscopy (SARPES) observations combined with state-of-the-art DFT calculations have revealed that the electronic spectrum of the Bi-dimer phase holds a quasi-1D hole-like spin-split state at the Fermi level with advanced spin texture, whereas the Bi-bilayer phase demonstrates metallic states with large Rashba spin-splitting. The band structure of the Bi/InAs(111)A interface is discovered to hold great potential as a high-performance spintronics material fabricated in the ultimate two-dimensional limit.
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Affiliation(s)
- Alexey N Mihalyuk
- Institute of High Technologies and Advanced Materials, Far Eastern Federal University, 690950 Vladivostok, Russia.
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Leonid V Bondarenko
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Alexandra Y Tupchaya
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Dimitry V Gruznev
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | | | - Vladimir A Golyashov
- Novosibirsk State University, 630090 Novosibirsk, Russia
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russia
| | - Oleg E Tereshchenko
- Novosibirsk State University, 630090 Novosibirsk, Russia
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russia
| | - Taichi Okuda
- Hiroshima Synchrotron Radiation Center (HSRC), Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan
| | - Akio Kimura
- Hiroshima Synchrotron Radiation Center (HSRC), Hiroshima University, 2-313 Kagamiyama, Higashi-Hiroshima 739-0046, Japan
- International Institute for Sustainability with Knotted Chiral Meta Matter (SKCM2), 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan
- Graduate School of Advanced Science and Engineering, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima 739-8526, Japan
| | - Sergey V Eremeev
- Institute of Strength Physics and Materials Science, Tomsk 634055, Russia
| | - Andrey V Zotov
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
| | - Alexander A Saranin
- Institute of Automation and Control Processes FEB RAS, 690041 Vladivostok, Russia
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2
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Estyunina TP, Shikin AM, Estyunin DA, Eryzhenkov AV, Klimovskikh II, Bokai KA, Golyashov VA, Kokh KA, Tereshchenko OE, Kumar S, Shimada K, Tarasov AV. Evolution of Mn 1-xGe xBi 2Te 4 Electronic Structure under Variation of Ge Content. Nanomaterials (Basel) 2023; 13:2151. [PMID: 37513162 PMCID: PMC10384094 DOI: 10.3390/nano13142151] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 07/22/2023] [Accepted: 07/23/2023] [Indexed: 07/30/2023]
Abstract
One of the approaches to manipulate MnBi2Te4 properties is the magnetic dilution, which inevitably affects the interplay of magnetism and band topology in the system. In this work, we carried out angle-resolved photoemission spectroscopy (ARPES) measurements and density functional theory (DFT) calculations for analysing changes in the electronic structure of Mn1-xGexBi2Te4 that occur under parameter x variation. We consider two ways of Mn/Ge substitution: (i) bulk doping of the whole system; (ii) surface doping of the first septuple layer. For the case (i), the experimental results reveal a decrease in the value of the bulk band gap, which should be reversed by an increase when the Ge concentration reaches a certain value. Ab-initio calculations show that at Ge concentrations above 50%, there is an absence of the bulk band inversion of the Te pz and Bi pz contributions at the Γ-point with significant spatial redistribution of the states at the band gap edges into the bulk, suggesting topological phase transition in the system. For case (ii) of the vertical heterostructure Mn1-xGexBi2Te4/MnBi2Te4, it was shown that an increase of Ge concentration in the first septuple layer leads to effective modulation of the Dirac gap in the absence of significant topological surface states of spatial redistribution. The results obtained indicate that surface doping compares favorably compared to bulk doping as a method for the Dirac gap value modulation.
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Affiliation(s)
- Tatiana P Estyunina
- Department of Physics, Saint Petersburg State University, St. Petersburg 198504, Russia
| | - Alexander M Shikin
- Department of Physics, Saint Petersburg State University, St. Petersburg 198504, Russia
| | - Dmitry A Estyunin
- Department of Physics, Saint Petersburg State University, St. Petersburg 198504, Russia
| | | | - Ilya I Klimovskikh
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Spain
| | - Kirill A Bokai
- Department of Physics, Saint Petersburg State University, St. Petersburg 198504, Russia
| | - Vladimir A Golyashov
- Department of Physics, Saint Petersburg State University, St. Petersburg 198504, Russia
- Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol'tsovo 630559, Russia
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia
| | - Konstantin A Kokh
- Department of Physics, Saint Petersburg State University, St. Petersburg 198504, Russia
- Sobolev Institute of Geology and Mineralogy, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia
| | - Oleg E Tereshchenko
- Department of Physics, Saint Petersburg State University, St. Petersburg 198504, Russia
- Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol'tsovo 630559, Russia
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia
| | - Shiv Kumar
- Hiroshima Synchrotron Radiation Center, Hiroshima University, Hiroshima 739-0046, Japan
| | - Kenya Shimada
- Hiroshima Synchrotron Radiation Center, Hiroshima University, Hiroshima 739-0046, Japan
| | - Artem V Tarasov
- Department of Physics, Saint Petersburg State University, St. Petersburg 198504, Russia
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3
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Tanaka H, Telegin AV, Sukhorukov YP, Golyashov VA, Tereshchenko OE, Lavrov AN, Matsuda T, Matsunaga R, Akashi R, Lippmaa M, Arai Y, Ideta S, Tanaka K, Kondo T, Kuroda K. Semiconducting Electronic Structure of the Ferromagnetic Spinel HgCr_{2}Se_{4} Revealed by Soft-X-Ray Angle-Resolved Photoemission Spectroscopy. Phys Rev Lett 2023; 130:186402. [PMID: 37204880 DOI: 10.1103/physrevlett.130.186402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Revised: 02/08/2023] [Accepted: 03/22/2023] [Indexed: 05/21/2023]
Abstract
We study the electronic structure of the ferromagnetic spinel HgCr_{2}Se_{4} by soft-x-ray angle-resolved photoemission spectroscopy (SX-ARPES) and first-principles calculations. While a theoretical study has predicted that this material is a magnetic Weyl semimetal, SX-ARPES measurements give direct evidence for a semiconducting state in the ferromagnetic phase. Band calculations based on the density functional theory with hybrid functionals reproduce the experimentally determined band gap value, and the calculated band dispersion matches well with ARPES experiments. We conclude that the theoretical prediction of a Weyl semimetal state in HgCr_{2}Se_{4} underestimates the band gap, and this material is a ferromagnetic semiconductor.
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Affiliation(s)
- Hiroaki Tanaka
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | | | | | - Vladimir A Golyashov
- Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
- Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, SB RAS, Kol'tsovo 630559, Russia
| | - Oleg E Tereshchenko
- Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
- Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, SB RAS, Kol'tsovo 630559, Russia
| | - Alexander N Lavrov
- Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk 630090, Russia
| | - Takuya Matsuda
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Ryusuke Matsunaga
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Ryosuke Akashi
- Quantum Materials and Applications Research Center, National Institutes for Quantum Science and Technology, Meguro-ku, Tokyo 152-0033, Japan
| | - Mikk Lippmaa
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Yosuke Arai
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - Shinichiro Ideta
- UVSOR Facility, Institute for Molecular Science, Okazaki, Aichi 444-8585, Japan
| | - Kiyohisa Tanaka
- UVSOR Facility, Institute for Molecular Science, Okazaki, Aichi 444-8585, Japan
| | - Takeshi Kondo
- Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
- Trans-scale Quantum Science Institute, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
| | - Kenta Kuroda
- Graduate School of Advanced Science and Engineering, Hiroshima University, Higashi-hiroshima, Hiroshima 739-8526, Japan
- International Institute for Sustainability with Knotted Chiral Meta Matter (WPI-SKCM2), Hiroshima University, Higashi-hiroshima, Hiroshima 739-8526, Japan
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Kumar N, Pleshkov RS, Prathibha BS, Polkovnikov VN, Chkhalo NI, Golyashov VA, Tereshchenko OE. Correction: Depth-resolved oxidational studies of Be/Al periodic multilayers investigated by X-ray photoelectron spectroscopy. Phys Chem Chem Phys 2023; 25:3545-3546. [PMID: 36636939 DOI: 10.1039/d3cp90011h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
Correction for 'Depth-resolved oxidational studies of Be/Al periodic multilayers investigated by X-ray photoelectron spectroscopy' by Niranjan Kumar et al., Phys. Chem. Chem. Phys., 2023, 25, 1205-1213, https://doi.org/10.1039/D2CP04778K.
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Affiliation(s)
- Niranjan Kumar
- Institute for Physics of Microstructures, RAS, Afonino, Nizhny Novgorod 603087, Russia.
| | - Roman S Pleshkov
- Institute for Physics of Microstructures, RAS, Afonino, Nizhny Novgorod 603087, Russia.
| | - B S Prathibha
- BNM Institute of Technology, Bangalore, Karnataka 560070, India
| | | | - Nikolay I Chkhalo
- Institute for Physics of Microstructures, RAS, Afonino, Nizhny Novgorod 603087, Russia.
| | - Vladimir A Golyashov
- Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia.,Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, SB RAS, Kol'tsovo 630559, Russia
| | - Oleg E Tereshchenko
- Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia.,Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, SB RAS, Kol'tsovo 630559, Russia
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5
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Tereshchenko OE, Golyashov VA, Rusetsky VS, Kustov DA, Mironov AV, Demin AY. Vacuum Spin LED: First Step towards Vacuum Semiconductor Spintronics. Nanomaterials (Basel) 2023; 13:422. [PMID: 36770383 PMCID: PMC9919810 DOI: 10.3390/nano13030422] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/06/2023] [Revised: 01/14/2023] [Accepted: 01/17/2023] [Indexed: 06/18/2023]
Abstract
Improving the efficiency of spin generation, injection, and detection remains a key challenge for semiconductor spintronics. Electrical injection and optical orientation are two methods of creating spin polarization in semiconductors, which traditionally require specially tailored p-n junctions, tunnel or Schottky barriers. Alternatively, we introduce here a novel concept for spin-polarized electron emission/injection combining the optocoupler principle based on vacuum spin-polarized light-emitting diode (spin VLED) making it possible to measure the free electron beam polarization injected into the III-V heterostructure with quantum wells (QWs) based on the detection of polarized cathodoluminescence (CL). To study the spin-dependent emission/injection, we developed spin VLEDs, which consist of a compact proximity-focused vacuum tube with a spin-polarized electron source (p-GaAs(Cs,O) or Na2KSb) and the spin detector (III-V heterostructure), both activated to a negative electron affinity (NEA) state. The coupling between the photon helicity and the spin angular momentum of the electrons in the photoemission and injection/detection processes is realized without using either magnetic material or a magnetic field. Spin-current detection efficiency in spin VLED is found to be 27% at room temperature. The created vacuum spin LED paves the way for optical generation and spin manipulation in the developing vacuum semiconductor spintronics.
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Affiliation(s)
- Oleg E. Tereshchenko
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia
- Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol’tsovo 630559, Russia
| | - Vladimir A. Golyashov
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia
- Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol’tsovo 630559, Russia
| | - Vadim S. Rusetsky
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia
- CJSC “Ekran FEP”, Novosibirsk 630060, Russia
| | - Danil A. Kustov
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia
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6
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Kumar N, Pleshkov RS, Prathibha BS, Polkovnikov VN, Chkhalo NI, Golyashov VA, Tereshchenko OE. Depth-resolved oxidational studies of Be/Al periodic multilayers investigated by X-ray photoelectron spectroscopy. Phys Chem Chem Phys 2023; 25:1205-1213. [PMID: 36519592 DOI: 10.1039/d2cp04778k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/04/2022]
Abstract
The quantification of surface and subsurface oxidation of Be/Al periodic multilayer mirrors due to exposure in the ambient atmosphere was investigated by depth-resolved X-ray photoelectron spectroscopy. The contribution of oxidation was lower for the thicker layer of Al in the periodic structures since the surface was less chemically reactive for the oxidation. This was investigated by finding the depth-resolved slope of the intensity ratio of metal/oxides (Be/BeOx and Al/AlOx) by analyzing the chemical shift of Al 1s and Be 1s photoelectrons. Furthermore, a well-resolved doublet chemical shift in the O 1s spectra indicated the formation of BeOx/AlOx and BeOH/AlOH oxides. The investigation showed that the subsurface and surface regions were dominated by metal-hydroxide (BeOH/AlOH) and metal-oxide (BeOx/AlOx) bonding, respectively, analyzed by the depth-resolved chemical shifts.
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Affiliation(s)
- Niranjan Kumar
- Institute for Physics of Microstructures, RAS, Afonino, Nizhny Novgorod 603087, Russia.
| | - Roman S Pleshkov
- Institute for Physics of Microstructures, RAS, Afonino, Nizhny Novgorod 603087, Russia.
| | - B S Prathibha
- BNM Institute of Technology, Bangalore, Karnataka 560070, India
| | | | - Nikolay I Chkhalo
- Institute for Physics of Microstructures, RAS, Afonino, Nizhny Novgorod 603087, Russia.
| | - Vladimir A Golyashov
- Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia.,Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, SB RAS, Kol'tsovo 630559, Russia
| | - Oleg E Tereshchenko
- Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia.,Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, SB RAS, Kol'tsovo 630559, Russia
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7
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Rusetsky VS, Golyashov VA, Eremeev SV, Kustov DA, Rusinov IP, Shamirzaev TS, Mironov AV, Demin AY, Tereshchenko OE. New Spin-Polarized Electron Source Based on Alkali Antimonide Photocathode. Phys Rev Lett 2022; 129:166802. [PMID: 36306756 DOI: 10.1103/physrevlett.129.166802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2022] [Accepted: 09/20/2022] [Indexed: 06/16/2023]
Abstract
New spin-dependent photoemission properties of alkali antimonide semiconductor cathodes are predicted based on the detected optical spin orientation effect and DFT band structure calculations. Using these results, the Na_{2}KSb/Cs_{3}Sb heterostructure is designed as a spin-polarized electron source in combination with the Al_{0.11}Ga_{0.89}As target as a spin detector with spatial resolution. In the Na_{2}KSb/Cs_{3}Sb photocathode, spin-dependent photoemission properties were established through detection of a high degree of photoluminescence polarization and high polarization of the photoemitted electrons. It was found that the multi-alkali photocathode can provide electron beams with emittance very close to the limits imposed by the electron thermal energy. The vacuum tablet-type sources of spin-polarized electrons have been proposed for accelerators, which can exclude the construction of the photocathode growth chambers for photoinjectors.
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Affiliation(s)
- V S Rusetsky
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia
- CJSC "Ekran FEP", Novosibirsk 630060, Russia
| | - V A Golyashov
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia
- Synchrotron radiation facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol'tsovo 630559, Russia
- Novosibirsk State University, Novosibirsk 630090 Russia
| | - S V Eremeev
- Institute of Strength Physics and Materials Science, Tomsk 634055, Russia
| | - D A Kustov
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia
| | - I P Rusinov
- Tomsk State University, Tomsk 634050, Russia
| | - T S Shamirzaev
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia
- Novosibirsk State University, Novosibirsk 630090 Russia
| | - A V Mironov
- CJSC "Ekran FEP", Novosibirsk 630060, Russia
| | - A Yu Demin
- CJSC "Ekran FEP", Novosibirsk 630060, Russia
| | - O E Tereshchenko
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russia
- Synchrotron radiation facility SKIF, Boreskov Institute of Catalysis, Siberian Branch, Russian Academy of Sciences, Kol'tsovo 630559, Russia
- Novosibirsk State University, Novosibirsk 630090 Russia
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8
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Kumar N, Nezhdanov AV, Smertin RM, Polkovnikov VN, Chkhalo NI, Golyashov VA, Tereshchenko OE. A volume plasmon blueshift in thin silicon films embedded within Be/Si periodic multilayer mirrors. Phys Chem Chem Phys 2022; 24:15951-15957. [PMID: 35730555 DOI: 10.1039/d2cp01697d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Microstructural properties of the beryllium (Be) and silicon (Si) in periodic multilayer mirrors Be/Si with the variation of film thickness were comprehensively determined by Raman scattering. For the thinner films, the structure of Be evolved in the amorphous phase, and it was transformed into the polycrystalline phase for thicker films. The Si films in the periodic structure were condensed into the amorphous phase. The small fraction of nanocrystalline Si particles was distributed within the amorphous phase. A shake-up satellite peak of Si 2s photoelectrons was observed in X-ray photoelectron spectroscopy which suggested the excitation of a plasmon in Si films embedded within Be/Si periodic multilayers. The energy of plasmons was sensitive to the film thickness of Si in the periods which directly corresponds to the particle size. The binding energy of the satellite peak of Si 2s photoelectrons was blueshifted (higher energy) with a decrease in the particle size. This was explained by size dependent quantum confinement of particles.
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Affiliation(s)
- Niranjan Kumar
- Institute for Physics of Microstructures, RAS, Afonino, Nizhny Novgorod 603087, Russia.
| | - Aleksey V Nezhdanov
- Laboratory of Functional Nanomaterials, Lobachevsky State University, Nizhny Novgorod 603950, Russia
| | - Rushlan M Smertin
- Institute for Physics of Microstructures, RAS, Afonino, Nizhny Novgorod 603087, Russia.
| | | | - Nikolay I Chkhalo
- Institute for Physics of Microstructures, RAS, Afonino, Nizhny Novgorod 603087, Russia.
| | - Vladimir A Golyashov
- Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia.,Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, SB RAS, Kol'tsovo 630559, Russia
| | - Oleg E Tereshchenko
- Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia.,Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis, SB RAS, Kol'tsovo 630559, Russia
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9
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Tereshchenko OE, Golyashov VA, Rusetsky VS, Mironov AV, Demin AY, Aksenov VV. A new imaging concept in spin polarimetry based on the spin-filter effect. J Synchrotron Radiat 2021; 28:864-875. [PMID: 33949994 DOI: 10.1107/s1600577521002307] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/07/2020] [Accepted: 02/28/2021] [Indexed: 06/12/2023]
Abstract
The concept of an imaging-type 3D spin detector, based on the combination of spin-exchange interactions in the ferromagnetic (FM) film and spin selectivity of the electron-photon conversion effect in a semiconductor heterostructure, is proposed and demonstrated on a model system. This novel multichannel concept is based on the idea of direct transfer of a 2D spin-polarized electron distribution to image cathodoluminescence (CL). The detector is a hybrid structure consisting of a thin magnetic layer deposited on a semiconductor structure allowing measurement of the spatial and polarization-dependent CL intensity from injected spin-polarized free electrons. The idea is to use spin-dependent electron transmission through in-plane magnetized FM film for in-plane spin detection by measuring the CL intensity from recombined electrons transmitted in the semiconductor. For the incoming electrons with out-of-plane spin polarization, the intensity of circularly polarized CL light can be detected from recombined polarized electrons with holes in the semiconductor. In order to demonstrate the ability of the solid-state spin detector in the image-type mode operation, a spin detector prototype was developed, which consists of a compact proximity focused vacuum tube with a spin-polarized electron source [p-GaAs(Cs,O)], a negative electron affinity (NEA) photocathode and the target [semiconductor heterostructure with quantum wells also with NEA]. The injection of polarized low-energy electrons into the target by varying the kinetic energy in the range 0.5-3.0 eV and up to 1.3 keV was studied in image-type mode. The figure of merit as a function of electron kinetic energy and the target temperature is determined. The spin asymmetry of the CL intensity in a ferromagnetic/semiconductor (FM-SC) junction provides a compact optical method for measuring spin polarization of free-electron beams in image-type mode. The FM-SC detector has the potential for realizing multichannel 3D vectorial reconstruction of spin polarization in momentum microscope and angle-resolved photoelectron spectroscopy systems.
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Affiliation(s)
- Oleg E Tereshchenko
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russian Federation
| | - Vladimir A Golyashov
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russian Federation
| | - Vadim S Rusetsky
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russian Federation
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10
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Zhevstovskikh IV, Averkiev NS, Sarychev MN, Semenova OI, Golyashov VA, Tereshchenko OE. Correlation of elastic and optoelectronic properties near structural phase transition in organic-inorganic lead iodide perovskite single crystals. J Phys Condens Matter 2020; 33:045403. [PMID: 32947281 DOI: 10.1088/1361-648x/abb9bb] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/11/2020] [Accepted: 09/18/2020] [Indexed: 06/11/2023]
Abstract
The experimental evidence of the influence of the structural phase transition on the elastic and optoelectronic properties of CH3NH3PbI3single crystals has been reported. A peak in the attenuation for longitudinal and shear ultrasonic waves and a step-like anomaly in their velocity have been found near the structural the orthorhombic-to-tetragonal phase transition (160 K). The narrow hysteresis observed in the temperature dependences of the elastic properties confirms that this is the first-order phase transition. A redshift of the absorption threshold (of about 110 meV) has been revealed both in the photocurrent (PC) and in the photoluminescence (PL) spectra with increasing temperature from 140 to 160 K. In the orthorhombic phase of CH3NH3PbI3single crystals, the fine exciton structure in the PC spectrum has been found with an exciton binding energy of 19-25 meV. The peculiarities of the PC and PL spectra near the phase transition temperature (160 K) have been observed within a wider temperature range in contrast to the elastic anomalies that can be explained by the complex structure of the near-surface region. It may be essential for the further development of optoelectronic devices based on hybrid halide perovskites.
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Affiliation(s)
- Irina V Zhevstovskikh
- M N Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Ekaterinburg 620108, Russia
- Ural Federal University, Ekaterinburg 620002, Russia
| | | | | | - Olga I Semenova
- A V Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090, Russia
| | - Vladimir A Golyashov
- A V Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090, Russia
| | - Oleg E Tereshchenko
- A V Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk 630090, Russia
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11
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Golyashov VA, Rusetsky VS, Shamirzaev TS, Dmitriev DV, Kislykh NV, Mironov AV, Aksenov VV, Tereshchenko OE. Spectral detection of spin-polarized ultra low-energy electrons in semiconductor heterostructures. Ultramicroscopy 2020; 218:113076. [PMID: 32738565 DOI: 10.1016/j.ultramic.2020.113076] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/01/2020] [Revised: 07/07/2020] [Accepted: 07/11/2020] [Indexed: 10/23/2022]
Abstract
The circularly polarized cathodoluminescence (CL) technique has been used to study the free spin-polarized electron injection in semiconductor heterostructures with quantum wells (QWs). A polarized electron beam was created by the emission of optically oriented electrons from the p-GaAs(Cs,O) negative electron affinity (NEA) photocathode. The prepared beam was injected in a semiconductor QW target, which was activated by cesium and oxygen to reduce the work function. To study the spin-dependent injection, we developed a spin-detector prototype, which consists of a compact proximity focused vacuum tube with the source and target placed parallel to each other on the opposite ends of the vacuum tube (photodiode). The injection of polarized low-energy electrons into the target by varying the kinetic energy in the range of 0.5-5.0 eV and temperature in the range of 90-300 K was studied. The CL was polarized to 2 % by the injection of 20 % spin-polarized electron beam with the energy of 0.5 eV at room temperature. The asymmetry (Sherman function) of spin detection was estimated. It was shown that the dependence of the CL polarization degree on the injected electron energy is satisfactory described by the model that considers the electron spin relaxation in the heterostructure matrix and QWs. The results demonstrate that semiconductor detectors are promising for the spin-polarimetry applications based on the optical detection of free-electron spin polarization.
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Affiliation(s)
- V A Golyashov
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russian Federation; Novosibirsk State University, Novosibirsk, 630090, Russian Federation
| | - V S Rusetsky
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russian Federation; CJSC EKRAN-FEP, Novosibirsk 630060, Russian Federation
| | - T S Shamirzaev
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russian Federation; Novosibirsk State University, Novosibirsk, 630090, Russian Federation
| | - D V Dmitriev
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russian Federation
| | - N V Kislykh
- CJSC EKRAN-FEP, Novosibirsk 630060, Russian Federation
| | - A V Mironov
- CJSC EKRAN-FEP, Novosibirsk 630060, Russian Federation
| | - V V Aksenov
- CJSC EKRAN-FEP, Novosibirsk 630060, Russian Federation
| | - O E Tereshchenko
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk 630090, Russian Federation; Novosibirsk State University, Novosibirsk, 630090, Russian Federation.
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12
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Antonova IV, Nebogatikova NA, Kokh KA, Kustov DA, Soots RA, Golyashov VA, Tereshchenko OE. Electrochemically exfoliated thin Bi 2Se 3 films and van der Waals heterostructures Bi 2Se 3/graphene. Nanotechnology 2020; 31:125602. [PMID: 31778984 DOI: 10.1088/1361-6528/ab5cd5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Thin Bi2Se3 flakes with few nanometer thicknesses and sized up to 350 μm were created by using electrochemical splitting from high-quality Bi2Se3 bulk monocrystals. The dependence of film resistance on the Bi2Se3 flake thickness demonstrates that, at room temperature, the bulk conductivity becomes negligible in comparison with the surface conductivity for films with thicknesses lower than 80 nm. Unexpectedly, all these films demonstrated p-type conductivity. The doping effect with sulfur or sulfur-related radicals during electrochemical exfoliation is suggested for the p-type conductivity of the exfoliated Bi2Se3 films. The formation of 2-8 nm films was predominantly found. Van der Waals (vdW) heterostructures of Bi2Se3/Graphene/SiO2/Si were created and their properties were compared with that of Bi2Se3 on the SiO2/Si substrate. The increase of the conductivity and carrier mobility in Bi2Se3 flakes of 3-5 times was found for vdW heterostructures with graphene. Thin Bi2Se3 films are potentially interesting for applications for spintronics, nano- and optoelectronics.
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Affiliation(s)
- I V Antonova
- Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk, 630090, Russia. Novosibirsk State University, Novosibirsk, 630090, Russia. Novosibirsk State Technical University, Novosibirsk, 630073, Russia
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13
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Kaveev AK, Sokolov NS, Suturin SM, Zhiltsov NS, Golyashov VA, Kokh KA, Prosvirin IP, Tereshchenko OE, Sawada M. Crystalline structure and magnetic properties of structurally ordered cobalt–iron alloys grown on Bi-containing topological insulators and systems with giant Rashba splitting. CrystEngComm 2018. [DOI: 10.1039/c8ce00326b] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Structurally ordered metallic nanostructures on Bi-containing TI surfaces were obtained, with detailed studies of their crystalline structure and magnetic properties.
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Affiliation(s)
| | | | | | | | | | - Konstantin A. Kokh
- V.S. Sobolev Institute of Geology and Mineralogy
- Novosibirsk
- Russia
- Novosibirsk State University
- Novosibirsk 630090
| | | | - Oleg E. Tereshchenko
- A.V. Rzhanov Institute of Semiconductor Physics
- Novosibirsk
- Russia
- Novosibirsk State University
- Novosibirsk 630090
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14
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Klimovskikh II, Shikin AM, Otrokov MM, Ernst A, Rusinov IP, Tereshchenko OE, Golyashov VA, Sánchez-Barriga J, Varykhalov AY, Rader O, Kokh KA, Chulkov EV. Giant Magnetic Band Gap in the Rashba-Split Surface State of Vanadium-Doped BiTeI: A Combined Photoemission and Ab Initio Study. Sci Rep 2017; 7:3353. [PMID: 28611416 PMCID: PMC5469768 DOI: 10.1038/s41598-017-03507-0] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/07/2017] [Accepted: 04/28/2017] [Indexed: 12/01/2022] Open
Abstract
One of the most promising platforms for spintronics and topological quantum computation is the two-dimensional electron gas (2DEG) with strong spin-orbit interaction and out-of-plane ferromagnetism. In proximity to an s-wave superconductor, such 2DEG may be driven into a topologically non-trivial superconducting phase, predicted to support zero-energy Majorana fermion modes. Using angle-resolved photoemission spectroscopy and ab initio calculations, we study the 2DEG at the surface of the vanadium-doped polar semiconductor with a giant Rashba-type splitting, BiTeI. We show that the vanadium-induced magnetization in the 2DEG breaks time-reversal symmetry, lifting Kramers degeneracy of the Rashba-split surface state at the Brillouin zone center via formation of a huge gap of about 90 meV. As a result, the constant energy contour inside the gap consists of only one circle with spin-momentum locking. These findings reveal a great potential of the magnetically-doped semiconductors with a giant Rashba-type splitting for realization of novel states of matter.
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Affiliation(s)
- I I Klimovskikh
- Saint Petersburg State University, 198504, Saint Petersburg, Russia.
| | - A M Shikin
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
| | - M M Otrokov
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- Tomsk State University, 634050, Tomsk, Russia
- Donostia International Physics Center (DIPC), 20018 San Sebastián/Donostia, Basque Country, Spain
| | - A Ernst
- Max Planck Institute of Microstructure Physics, Weinberg 2, 06120, Halle, Germany
- Institut für Theoretische Physik, Johannes Kepler Universität, A 4040, Linz, Austria
| | - I P Rusinov
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- Tomsk State University, 634050, Tomsk, Russia
| | - O E Tereshchenko
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- A.V. Rzhanov Institute of Semiconductor Physics, 630090, Novosibirsk, Russia
- Novosibirsk State University, 630090, Novosibirsk, Russia
| | - V A Golyashov
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- A.V. Rzhanov Institute of Semiconductor Physics, 630090, Novosibirsk, Russia
| | - J Sánchez-Barriga
- Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Strasse 15, 12489, Berlin, Germany
| | - A Yu Varykhalov
- Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Strasse 15, 12489, Berlin, Germany
| | - O Rader
- Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Strasse 15, 12489, Berlin, Germany
| | - K A Kokh
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- Novosibirsk State University, 630090, Novosibirsk, Russia
- V.S. Sobolev Institute of Geology and Mineralogy, 630090, Novosibirsk, Russia
| | - E V Chulkov
- Saint Petersburg State University, 198504, Saint Petersburg, Russia
- Tomsk State University, 634050, Tomsk, Russia
- Donostia International Physics Center (DIPC), 20018 San Sebastián/Donostia, Basque Country, Spain
- Departamento de Física de Materiales UPV/EHU, Centro de Física de Materiales CFM - MPC and Centro Mixto CSIC-UPV/EHU, 20080 San Sebastián/Donostia, Basque Country, Spain
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