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Lan Z, Huang H, Du S, Lu Y, Sun C, Yang Y, Zhang Q, Suo Y, Qu S, Wang M, Wang X, Yan L, Cui P, Zhao Z, Li M. Cascade Reaction in Organic Hole Transport Layer Enables Efficient Perovskite Solar Cells. Angew Chem Int Ed Engl 2024:e202402840. [PMID: 38509835 DOI: 10.1002/anie.202402840] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/08/2024] [Revised: 03/03/2024] [Accepted: 03/18/2024] [Indexed: 03/22/2024]
Abstract
The doped organic hole transport layer (HTL) is crucial for achieving high-efficiency perovskite solar cells (PSCs). However, the traditional doping strategy undergoes a time-consuming and environment-dependent oxidation process, which hinders the technology upgrades and commercialization of PSCs. Here, we reported a new strategy by introducing a cascade reaction in traditional doped Spiro-OMeTAD, which can simultaneously achieve rapid oxidation and overcome the erosion of perovskite by 4-tert-butylpyridine (tBP) in organic HTL. The ideal dopant iodobenzene diacetate was utilized as the initiator that can react with Spiro to generate Spiro⋅+ radicals quickly and efficiently without the participation of ambient air, with the byproduct of iodobenzene (DB). Then, the DB can coordinate with tBP through a halogen bond to form a tBP-DB complex, minimizing the sustained erosion from tBP to perovskite. Based on the above cascade reaction, the resulting Spiro-based PSCs have a champion PCE of 25.76 % (certificated of 25.38 %). This new oxidation process of HTL is less environment-dependent and produces PSCs with higher reproducibility. Moreover, the PTAA-based PSCs obtain a PCE of 23.76 %, demonstrating the excellent applicability of this doping strategy on organic HTL.
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Affiliation(s)
- Zhineng Lan
- North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, 2 Beinong Road, Changping District, Beijing, 102206, China
| | - Hao Huang
- North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, 2 Beinong Road, Changping District, Beijing, 102206, China
| | - Shuxian Du
- North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, 2 Beinong Road, Changping District, Beijing, 102206, China
| | - Yi Lu
- North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, 2 Beinong Road, Changping District, Beijing, 102206, China
| | - Changxu Sun
- North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, 2 Beinong Road, Changping District, Beijing, 102206, China
| | - Yingying Yang
- North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, 2 Beinong Road, Changping District, Beijing, 102206, China
| | - Qiang Zhang
- North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, 2 Beinong Road, Changping District, Beijing, 102206, China
| | - Yi Suo
- North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, 2 Beinong Road, Changping District, Beijing, 102206, China
| | - Shujie Qu
- North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, 2 Beinong Road, Changping District, Beijing, 102206, China
| | - Min Wang
- North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, 2 Beinong Road, Changping District, Beijing, 102206, China
| | - Xinxin Wang
- North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, 2 Beinong Road, Changping District, Beijing, 102206, China
| | - Luyao Yan
- North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, 2 Beinong Road, Changping District, Beijing, 102206, China
| | - Peng Cui
- North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, 2 Beinong Road, Changping District, Beijing, 102206, China
| | - Zhiguo Zhao
- China Huaneng Clean Energy Research Institute, Beijing, 102209, China
| | - Meicheng Li
- North China Electric Power University, State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, 2 Beinong Road, Changping District, Beijing, 102206, China
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2
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Huang Z, Tian N, Duan S, Zhang J, Yao D, Zheng G, Yang Y, Zhou B. Interface Defects Dependent on Perovskite Annealing Temperature for NiO X-Based Inverted CsPbI 2Br Perovskite Solar Cells. ChemSusChem 2024:e202301722. [PMID: 38487956 DOI: 10.1002/cssc.202301722] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
Nickel oxide (NiOX) is an ideal inorganic hole transport material for the fabrication of inverted perovskite solar cells owing to its excellent optical and semiconductor properties. Currently, the main research on developing the performance of NiOX-based perovskite solar cells focuses on improving the conductivity of NiOX thin films and preventing the redox reactions between metal cations (Ni3+ on the surface of NiOX) and organic cations (FA+ or MA+ in the perovskite precursors) at the NiOX/perovskite interface. In this study, a new type of interface defects in NiOX-based CsPbI2Br solar cells is reported. That is the Pb2+ from CsPbI2Br perovskites can diffuse into the lattice of NiOX surface as the annealing temperature of perovskites changes. The diffusion of Pb2+ increases the ratio of Ni3+/Ni2+ on the surface of NiOX, leading to an increase in the density of trap state at the interface between NiOX and perovskites, which eventually results in a serious decline in the photovoltaic performance of solar cells.
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Affiliation(s)
- Zhaoxuan Huang
- School of Materials Science and Engineering, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, Guilin University of Technology, 12 Jiangan Road, Qixing District, Guilin, Guangxi, 541004, P. R. China
| | - Nan Tian
- School of Materials Science and Engineering, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, Guilin University of Technology, 12 Jiangan Road, Qixing District, Guilin, Guangxi, 541004, P. R. China
- Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, Guilin University of Technology, 12 Jiangan Road, Qixing District, Guilin, Guangxi, 541004, P. R. China
| | - Shiyu Duan
- School of Materials Science and Engineering, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, Guilin University of Technology, 12 Jiangan Road, Qixing District, Guilin, Guangxi, 541004, P. R. China
| | - Jicheng Zhang
- School of Materials Science and Engineering, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, Guilin University of Technology, 12 Jiangan Road, Qixing District, Guilin, Guangxi, 541004, P. R. China
| | - Disheng Yao
- School of Materials Science and Engineering, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, Guilin University of Technology, 12 Jiangan Road, Qixing District, Guilin, Guangxi, 541004, P. R. China
- Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, Guilin University of Technology, 12 Jiangan Road, Qixing District, Guilin, Guangxi, 541004, P. R. China
| | - Guoyuan Zheng
- School of Materials Science and Engineering, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, Guilin University of Technology, 12 Jiangan Road, Qixing District, Guilin, Guangxi, 541004, P. R. China
- Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, Guilin University of Technology, 12 Jiangan Road, Qixing District, Guilin, Guangxi, 541004, P. R. China
| | - Yanhan Yang
- School of Science, Xi'an University of Posts and Telecommunications, 618 West Chang'an Street, Chang'an District, Xi'an, Shaanxi, 710121, P. R. China
| | - Bing Zhou
- School of Materials Science and Engineering, Guangxi Key Laboratory of Optical and Electronic Materials and Devices, Guilin University of Technology, 12 Jiangan Road, Qixing District, Guilin, Guangxi, 541004, P. R. China
- Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of Resources, Guilin University of Technology, 12 Jiangan Road, Qixing District, Guilin, Guangxi, 541004, P. R. China
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Zhang Y, Zhou C, Lin L, Pei F, Xiao M, Yang X, Yuan G, Zhu C, Chen Y, Chen Q. Gelation of Hole Transport Layer to Improve the Stability of Perovskite Solar Cells. Nanomicro Lett 2023; 15:175. [PMID: 37428245 PMCID: PMC10333165 DOI: 10.1007/s40820-023-01145-y] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2023] [Accepted: 06/11/2023] [Indexed: 07/11/2023]
Abstract
To achieve high power conversion efficiency (PCE) and long-term stability of perovskite solar cells (PSCs), a hole transport layer (HTL) with persistently high conductivity, good moisture/oxygen barrier ability, and adequate passivation capability is important. To achieve enough conductivity and effective hole extraction, spiro-OMeTAD, one of the most frequently used HTL in optoelectronic devices, often needs chemical doping with a lithium compound (LiTFSI). However, the lithium salt dopant induces crystallization and has a negative impact on the performance and lifetime of the device due to its hygroscopic nature. Here, we provide an easy method for creating a gel by mixing a natural small molecule additive (thioctic acid, TA) with spiro-OMeTAD. We discover that gelation effectively improves the compactness of resultant HTL and prevents moisture and oxygen infiltration. Moreover, the gelation of HTL improves not only the conductivity of spiro-OMeTAD, but also the operational robustness of the devices in the atmospheric environment. In addition, TA passivates the perovskite defects and facilitates the charge transfer from the perovskite layer to HTL. As a consequence, the optimized PSCs based on the gelated HTL exhibit an improved PCE (22.52%) with excellent device stability.
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Affiliation(s)
- Ying Zhang
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Chenxiao Zhou
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Lizhi Lin
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Fengtao Pei
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Mengqi Xiao
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Xiaoyan Yang
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Guizhou Yuan
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Cheng Zhu
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Yu Chen
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China
| | - Qi Chen
- Beijing Key Laboratory of Construction Tailorable Advanced Functional Materials and Green Applications, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, People's Republic of China.
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4
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Lee CC, Iskandar J, Kurniawan A, Hsu HP, Wu YF, Cheng HM, Liu SW. Modulation of the carrier balance of lead-halide perovskite nanocrystals by polyelectrolyte hole transport layers for near-infrared light-emitting diodes. Heliyon 2022; 8:e10504. [PMID: 36132171 PMCID: PMC9483597 DOI: 10.1016/j.heliyon.2022.e10504] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/01/2022] [Revised: 08/26/2022] [Accepted: 08/26/2022] [Indexed: 11/12/2022] Open
Abstract
An alternative material, methylamine (MA)-doped poly[3-(4-carboxymethyl)thiophene-2,5-diyl] (P3CT) as hole transport layer (HTL) was investigated for efficient solution-processed near-infrared perovskite light-emitting diodes (NIR PeLEDs). The best NIR PeLEDs performance was achieved with an optimized composition ratio of the MA-doped P3CT (1:1) due to the balance of the electron and hole carrier in the active layer. The charge-balanced NIR PeLEDs exhibit the highest radiance of 858.37 W sr−1 m−2, a low turn-on voltage of 1.82 V, and an external quantum efficiency of 7.44%. Our findings show that using P3CT as an alternative HTL has the potential to significantly improve PeLED performance, allowing it to play a role in the development of practical applications in high-power NIR LEDs.
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Affiliation(s)
- Chih-Chien Lee
- Department of Electronic Engineering National Taiwan University of Science and Technology, Taipei City 106335, Taiwan
| | - Johan Iskandar
- Department of Electronic Engineering National Taiwan University of Science and Technology, Taipei City 106335, Taiwan.,Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 243303, Taiwan
| | - Ade Kurniawan
- Department of Electronic Engineering National Taiwan University of Science and Technology, Taipei City 106335, Taiwan.,Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 243303, Taiwan
| | - Hung-Pin Hsu
- Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243303, Taiwan.,Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 243303, Taiwan
| | - Ya-Fen Wu
- Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243303, Taiwan.,Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 243303, Taiwan
| | - Hsin-Ming Cheng
- Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243303, Taiwan.,Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 243303, Taiwan
| | - Shun-Wei Liu
- Department of Electronic Engineering, Ming Chi University of Technology, New Taipei City 243303, Taiwan.,Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 243303, Taiwan
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5
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Ning P, Liang J, Li L, Chen D, Qin L, Yao X, Chen H, Huang Y. In situ growth of Z-scheme CuS/CuSCN heterojunction to passivate surface defects and enhance charge transport. J Colloid Interface Sci 2021; 590:407-414. [PMID: 33561590 DOI: 10.1016/j.jcis.2020.12.126] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2020] [Revised: 12/23/2020] [Accepted: 12/30/2020] [Indexed: 11/25/2022]
Abstract
Copper thiocyanate (CuSCN) has been considered as a promising hole transport material (HTMs), attributing to its inherent stability, low-cost, and suitable energy levels. To make it more attractive in practical applications, the drawbacks of CuSCN in poor charge transport and serious defect recombination are bottlenecks that need to be overcome. In this work, we propose an effective strategy of in-situ decorating CuSCN with copper sulfide quantum dots (CuS QDs), a simple one-step electrochemical deposition process, to solve these issues. Compared with the pristine CuSCN, the constructed Z-Scheme heterojunction of CuS QDs/CuSCN can significantly promote charge transport and restrict recombination. In addition, the decorated CuS QDs can not only passivate defects of CuSCN, but also provide more contacting sites to facilitate hole injection when employing as HTM. As a result, the average bulk charge lifetime was improved from 0.37 ms to 0.47 ms, and the surface recombination rate constant was suppressed. We believe that the excellent performances will pave it toward practical device applications, including solar cells, photocatalysis, photoelectrochemical sensors, and light-emitting diodes.
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Affiliation(s)
- Pei Ning
- College of Materials and Chemistry, China Jiliang University, Hangzhou 300018, Zhejiang, China
| | - Junhui Liang
- College of Materials and Chemistry, China Jiliang University, Hangzhou 300018, Zhejiang, China.
| | - Linghui Li
- College of Materials and Chemistry, China Jiliang University, Hangzhou 300018, Zhejiang, China
| | - Da Chen
- College of Materials and Chemistry, China Jiliang University, Hangzhou 300018, Zhejiang, China.
| | - Laishun Qin
- College of Materials and Chemistry, China Jiliang University, Hangzhou 300018, Zhejiang, China
| | - Xin Yao
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou 300018, Zhejiang, China
| | - Huayu Chen
- College of Materials and Chemistry, China Jiliang University, Hangzhou 300018, Zhejiang, China
| | - Yuexiang Huang
- College of Materials and Chemistry, China Jiliang University, Hangzhou 300018, Zhejiang, China
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6
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Shalabny A, Buonocore F, Celino M, Shalev G, Zhang L, Wu W, Li P, Arbiol J, Bashouti MY. Semiconductivity Transition in Silicon Nanowires by Hole Transport Layer. Nano Lett 2020; 20:8369-8374. [PMID: 33104366 DOI: 10.1021/acs.nanolett.0c03543] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The surface of nanowires is a source of interest mainly for electrical prospects. Thus, different surface chemical treatments were carried out to develop recipes to control the surface effect. In this work, we succeed in shifting and tuning the semiconductivity of a Si nanowire-based device from n- to p-type. This was accomplished by generating a hole transport layer at the surface by using an electrochemical reaction-based nonequilibrium position to enhance the impact of the surface charge transfer. This was completed by applying different annealing pulses at low temperature (below 400 °C) to reserve the hydrogen bonds at the surface. After each annealing pulse, the surface was characterized by XPS, Kelvin probe measurements, and conductivity measured by FET based on a single Si NW. The mechanism and conclusion were supported experimentally and theoretically. To this end, this strategy has been demonstrated as an essential tool which could pave a new road for regulating semiconductivity and for other low-dimensional nanomaterials.
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Affiliation(s)
- Awad Shalabny
- Department of Solar Energy and Environmental Physics, Swiss Institute for Dryland Environmental and Energy Research, J. Blaustein Institutes for Desert Research, Ben-Gurion University of the Negev, Midreshset Ben-Gurion, Building 26, Beer-Sheva 8499000, Israel
| | | | - Massimo Celino
- ENEA, C. R. Casaccia, via Anguillarese 301, 00123 Rome, Italy
| | - Gil Shalev
- School of Electrical & Computer Engineering, Ben-Gurion University of the Negev, POB653, Beer-Sheva 8410501, Israel
| | - Lu Zhang
- School of Advanced Materials and Nanotechnology, Interdisciplinary Research Center of Smart Sensors, Xidian University, Shaanxi 710126, P.R. China
| | - Weiwei Wu
- School of Advanced Materials and Nanotechnology, Interdisciplinary Research Center of Smart Sensors, Xidian University, Shaanxi 710126, P.R. China
| | - Peixian Li
- School of Advanced Materials and Nanotechnology, Interdisciplinary Research Center of Smart Sensors, Xidian University, Shaanxi 710126, P.R. China
| | - Jordi Arbiol
- Institució Catalana de Recerca i Estudis Avançats (ICREA) and Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, 08193 Bellaterra, CAT, Spain
| | - Muhammad Y Bashouti
- Department of Solar Energy and Environmental Physics, Swiss Institute for Dryland Environmental and Energy Research, J. Blaustein Institutes for Desert Research, Ben-Gurion University of the Negev, Midreshset Ben-Gurion, Building 26, Beer-Sheva 8499000, Israel
- The IISe-Katz Institute for Nanoscale Science & Technology, Ben-Gurion University of the Negev, POB653, Building 51, Beer-Sheva 8410501, Israel
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7
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Huang S, Wang Y, Shen S, Tang Y, Yu A, Kang B, Silva SRP, Lu G. Enhancing the performance of polymer solar cells using solution-processed copper doped nickel oxide nanoparticles as hole transport layer. J Colloid Interface Sci 2018; 535:308-317. [PMID: 30316117 DOI: 10.1016/j.jcis.2018.10.013] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2018] [Revised: 09/30/2018] [Accepted: 10/05/2018] [Indexed: 11/16/2022]
Abstract
Polymer solar cells (PSCs) are considered promising energy power suppliers due to their light weight, printability, low-energy fabrication and roll-to-roll processability. Recently, the solution-processed NiOx nanoparticles have been a desirable interfacial material for hole transport in the PSCs, instead of organic semiconductors. However, pure NiOx films restrain the high performance of PSCs due to their poor electrical characteristics caused by the localized orbital distribution at the top of valence band. Therefore, metal ion doping has been explored as a method to endow NiOx nanoparticles with the appropriate electrical characteristics. Herein, we applied solution-processed Cu-doped NiOx (Cu:NiOx) nanoparticles as an efficient hole transport layer (HTL) in PSCs. The Cu-doped NiOx enhanced the electrical conductivity of the material and improved the interface contact with the active layer, which remarkably facilitated the hole extraction and effectively suppressed the carrier recombination at the interface. Thus, a higher power conversion efficiency of 7.05%, corresponding to an approximately 30% efficiency improvement compared with that of a pristine NiOx interlayer (5.44%) in poly[N- 9''-hepta-decanyl-2,7-carbazolealt-5,5-(4',7'-di-2-thienyl-2',1',3'-ben-zothiadiazole)]:[6,6]-phenyl-C71-butyric acid methyl ester (PCDTBT:PC71BM)-based PSCs, was achieved by the proposed device. The developed solution-processed Cu:NiOx nanoparticles may be an excellent alternative for interfacial materials in PSCs or other optoelectronic devices requiring HTLs.
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Affiliation(s)
- Shuai Huang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Yunhe Wang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Si Shen
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Yuting Tang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Ancan Yu
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Bonan Kang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.
| | - S Ravi P Silva
- Nanoelectronics Centre, Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom
| | - Geyu Lu
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
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8
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Tulsani SR, Rath AK. Photo-induced surface modification to improve the performance of lead sulfide quantum dot solar cell. J Colloid Interface Sci 2018; 522:120-125. [PMID: 29579563 DOI: 10.1016/j.jcis.2018.03.047] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/27/2017] [Revised: 03/09/2018] [Accepted: 03/14/2018] [Indexed: 10/17/2022]
Abstract
The solution-processed quantum dot (QD) solar cell technology has seen significant advancements in recent past to emerge as a potential contender for the next generation photovoltaic technology. In the development of high performance QD solar cell, the surface ligand chemistry has played the important role in controlling the doping type and doping density of QD solids. For instance, lead sulfide (PbS) QDs which is at the forefront of QD solar cell technology, can be made n-type or p-type respectively by using iodine or thiol as the surfactant. The advancements in surface ligand chemistry enable the formation of p-n homojunction of PbS QDs layers to attain high solar cell performances. It is shown here, however, that poor Fermi level alignment of thiol passivated p-type PbS QD hole transport layer with the n-type PbS QD light absorbing layer has rendered the photovoltaic devices from realizing their full potential. Here we develop a control surface oxidation technique using facile ultraviolet ozone treatment to increase the p-doping density in a controlled fashion for the thiol passivated PbS QD layer. This subtle surface modification tunes the Fermi energy level of the hole transport layer to deeper values to facilitate the carrier extraction and voltage generation in photovoltaic devices. In photovoltaic devices, the ultraviolet ozone treatment resulted in the average gain of 18% in the power conversion efficiency with the highest recorded efficiency of 8.98%.
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Affiliation(s)
| | - Arup Kumar Rath
- CSIR-National Chemical Laboratory, Dr. Homi Bhabha Road, Pune 411008, India.
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9
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Moon S, Khadtare S, Wong M, Han SH, Bazan GC, Choi H. Hole transport layer based on conjugated polyelectrolytes for polymer solar cells. J Colloid Interface Sci 2018; 518:21-26. [PMID: 29438860 DOI: 10.1016/j.jcis.2018.02.009] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2017] [Revised: 02/02/2018] [Accepted: 02/04/2018] [Indexed: 10/18/2022]
Abstract
We demonstrate the conjugated polyelectrolytes (CPEs) as efficient hole transport layer (HTL) of polymer solar cells. Replacing poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) with a CPEs with narrow bandgap results in both improvements in device efficiency and stability. In spite of their narrow bandgap, thin CPE films (thickness of ∼30 nm) enable sufficient light absorption within the active layer. Enhancement of device efficiency is attributed to low surface roughness, high transmittance in visible region, and reduced charge transfer resistance. Compared to the device with PEDOT:PSS, pH neutral nature of CPEs may enhance device stability under ambient condition.
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Affiliation(s)
- Sanghun Moon
- Department of Chemistry, Research Institute for Natural Sciences, Hanyang University, Seoul 133-791, Republic of Korea
| | - Shubhangi Khadtare
- Department of Chemistry, Research Institute for Natural Sciences, Hanyang University, Seoul 133-791, Republic of Korea
| | - Matthew Wong
- Center for Polymers and Organic Solids, University of California Santa Barbara, Santa Barbara, CA 93106, USA
| | - Sung-Hwan Han
- Department of Chemistry, Research Institute for Natural Sciences, Hanyang University, Seoul 133-791, Republic of Korea
| | - Guillermo C Bazan
- Center for Polymers and Organic Solids, University of California Santa Barbara, Santa Barbara, CA 93106, USA.
| | - Hyosung Choi
- Department of Chemistry, Research Institute for Natural Sciences, Hanyang University, Seoul 133-791, Republic of Korea.
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Dubey A, Adhikari N, Venkatesan S, Gu S, Khatiwada D, Wang Q, Mohammad L, Kumar M, Qiao Q. Shelf life stability comparison in air for solution processed pristine PDPP3T polymer and doped spiro-OMeTAD as hole transport layer for perovskite solar cell. Data Brief 2016; 7:139-142. [PMID: 27761487 PMCID: PMC5063754 DOI: 10.1016/j.dib.2016.02.021] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/13/2015] [Revised: 11/09/2015] [Accepted: 02/06/2016] [Indexed: 11/29/2022] Open
Abstract
This data in brief includes forward and reverse scanned current density-voltage (J-V) characteristics of perovskite solar cells with PDPP3T and spiro-OMeTAD as HTL, stability testing conditions of perovskite solar cell shelf life in air for both PDPP3T and spiro-OMeTAD as HTL as per the description in Ref. [1], and individual J-V performance parameters acquired with increasing time exposed in ambient air are shown for both type of devices using PDPP3T and spiro-OMeTAD as HTL. The data collected in this study compares the device stability with time for both PDPP3T and spiro-OMeTAD based perovskite solar cells and is directly related to our research article "solution processed pristine PDPP3T polymer as hole transport layer for efficient perovskite solar cells with slower degradation" [2].
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Affiliation(s)
- Ashish Dubey
- Center for Advanced Photovoltaics, Department of Electrical Engineering and Computer Science, South Dakota State University, Brookings, SD 57007, USA
| | - Nirmal Adhikari
- Center for Advanced Photovoltaics, Department of Electrical Engineering and Computer Science, South Dakota State University, Brookings, SD 57007, USA
| | - Swaminathan Venkatesan
- Center for Advanced Photovoltaics, Department of Electrical Engineering and Computer Science, South Dakota State University, Brookings, SD 57007, USA
| | - Shaopeng Gu
- Center for Advanced Photovoltaics, Department of Electrical Engineering and Computer Science, South Dakota State University, Brookings, SD 57007, USA
| | - Devendra Khatiwada
- Center for Advanced Photovoltaics, Department of Electrical Engineering and Computer Science, South Dakota State University, Brookings, SD 57007, USA
| | - Qi Wang
- Center for Advanced Photovoltaics, Department of Electrical Engineering and Computer Science, South Dakota State University, Brookings, SD 57007, USA
| | - Lal Mohammad
- Center for Advanced Photovoltaics, Department of Electrical Engineering and Computer Science, South Dakota State University, Brookings, SD 57007, USA
| | - Mukesh Kumar
- Functional and Renewable Energy Materials Laboratory, Department of Physics, Indian Institute of Technology Ropar, Punjab 140 001, India
| | - Qiquan Qiao
- Center for Advanced Photovoltaics, Department of Electrical Engineering and Computer Science, South Dakota State University, Brookings, SD 57007, USA
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