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Liu L, Chen R, Kong C, Deng Z, Liu G, Yan J, Qin L, Du H, Song S, Zhang X, Wang W. Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy. Materials (Basel) 2024; 17:845. [PMID: 38399096 PMCID: PMC10890182 DOI: 10.3390/ma17040845] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2024] [Revised: 02/04/2024] [Accepted: 02/08/2024] [Indexed: 02/25/2024]
Abstract
The growth of InGaAs quantum wells (QWs) epitaxially on InP substrates is of great interest due to their wide application in optoelectronic devices. However, conventional molecular beam epitaxy requires substrate temperatures between 400 and 500 °C, which can lead to disorder scattering, dopant diffusion, and interface roughening, adversely affecting device performance. Lower growth temperatures enable the fabrication of high-speed optoelectronic devices by increasing arsenic antisite defects and reducing carrier lifetimes. This work investigates the low-temperature epitaxial growth of InAs/GaAs short-period superlattices as an ordered replacement for InGaAs quantum wells, using migration-enhanced epitaxy (MEE) with low growth temperatures down to 200-250 °C. The InAs/GaAs multi-quantum wells with InAlAs barriers using MEE grown at 230 °C show good single crystals with sharp interfaces, without mismatch dislocations found. The Raman results reveal that the MEE mode enables the growth of (InAs)4(GaAs)3/InAlAs QWs with excellent periodicity, effectively reducing alloy scattering. The room temperature (RT) photoluminescence (PL) measurement shows the strong PL responses with narrow peaks, revealing the good quality of the MEE-grown QWs. The RT electron mobility of the sample grown in low-temperature MEE mode is as high as 2100 cm2/V∗s. In addition, the photoexcited band-edge carrier lifetime was about 3.3 ps at RT. The high-quality superlattices obtained confirm MEE's effectiveness for enabling advanced III-V device structures at reduced temperatures. This promises improved performance for applications in areas such as high-speed transistors, terahertz imaging, and optical communications.
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Affiliation(s)
- Linsheng Liu
- Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips/Key Laboratory of Integrated Circuits and Microsystems (Education Department of Guangxi Zhuang Autonomous Region), School of Electronic and Information Engineering/School of Integrated Circuits, Guangxi Normal University, Guilin 541004, China; (L.L.)
| | - Ruolin Chen
- Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips/Key Laboratory of Integrated Circuits and Microsystems (Education Department of Guangxi Zhuang Autonomous Region), School of Electronic and Information Engineering/School of Integrated Circuits, Guangxi Normal University, Guilin 541004, China; (L.L.)
| | - Chongtao Kong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Zhen Deng
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Guipeng Liu
- School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
| | - Jianfeng Yan
- Sino Nitride Semiconductor Co., Ltd., Dongguan 523000, China
| | - Le Qin
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Hao Du
- Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips/Key Laboratory of Integrated Circuits and Microsystems (Education Department of Guangxi Zhuang Autonomous Region), School of Electronic and Information Engineering/School of Integrated Circuits, Guangxi Normal University, Guilin 541004, China; (L.L.)
| | - Shuxiang Song
- Guangxi Key Laboratory of Brain-Inspired Computing and Intelligent Chips/Key Laboratory of Integrated Circuits and Microsystems (Education Department of Guangxi Zhuang Autonomous Region), School of Electronic and Information Engineering/School of Integrated Circuits, Guangxi Normal University, Guilin 541004, China; (L.L.)
| | - Xinhui Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Wenxin Wang
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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