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Benčina M, Junkar I, Vesel A, Mozetič M, Iglič A. Nanoporous Stainless Steel Materials for Body Implants-Review of Synthesizing Procedures. Nanomaterials (Basel) 2022; 12:2924. [PMID: 36079962 PMCID: PMC9457931 DOI: 10.3390/nano12172924] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/08/2022] [Revised: 08/18/2022] [Accepted: 08/18/2022] [Indexed: 06/15/2023]
Abstract
Despite the inadequate biocompatibility, medical-grade stainless steel materials have been used as body implants for decades. The desired biological response of surfaces to specific applications in the body is a highly challenging task, and usually not all the requirements of a biomaterial can be achieved. In recent years, nanostructured surfaces have shown intriguing results as cell selectivity can be achieved by specific surface nanofeatures. Nanoporous structures can be fabricated by anodic oxidation, which has been widely studied for titanium and its alloys, while no systematic studies are so far available for stainless steel (SS) materials. This paper reviews the current state of the art in the anodisation of SS; correlations between the parameters of anodic oxidation and the surface morphology are drawn. The results reported by various authors are scattered because of a variety of experimental configurations. A linear correlation between the pores' diameter anodisation voltage was deduced, while no correlation with other processing parameters was found obvious. The analyses of available data indicated a lack of systematic experiments, which are recommended to understand the kinetics of pore formation and develop techniques for optimal biocompatibility of stainless steel.
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Affiliation(s)
- Metka Benčina
- Department of Surface Engineering, Jožef Stefan Institute, Jamova Cesta 39, 1000 Ljubljana, Slovenia
- Laboratory of Physics, Faculty of Electrical Engineering, University of Ljubljana, 1000 Ljubljana, Slovenia
| | - Ita Junkar
- Department of Surface Engineering, Jožef Stefan Institute, Jamova Cesta 39, 1000 Ljubljana, Slovenia
| | - Alenka Vesel
- Department of Surface Engineering, Jožef Stefan Institute, Jamova Cesta 39, 1000 Ljubljana, Slovenia
| | - Miran Mozetič
- Department of Surface Engineering, Jožef Stefan Institute, Jamova Cesta 39, 1000 Ljubljana, Slovenia
| | - Aleš Iglič
- Laboratory of Physics, Faculty of Electrical Engineering, University of Ljubljana, 1000 Ljubljana, Slovenia
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Wang Y, Chen X, Xiu H, Zhuang H, Li J, Zhou Y, Liu D, Kuang Y. General In Situ Photoactivation Route with IPCE over 80% toward CdS Photoanodes for Photoelectrochemical Applications. Small 2021; 17:e2104307. [PMID: 34725925 DOI: 10.1002/smll.202104307] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/21/2021] [Revised: 09/14/2021] [Indexed: 06/13/2023]
Abstract
Cost-effective photoanodes with remarkable electronic properties are highly demanded for practical photoelectrochemical (PEC) water splitting. The ability to manipulate the surface carrier separation and recombination is pivotal for achieving high PEC performance for water splitting. Here, a facile and economical approach is reported for substantially improving the surface charge separation property of CdS photoanodes through in situ photoactivation, which significantly reduces surface charge recombination through the formation of thiosulfate ion which is favorable to the transfer of photogenerated holes and a uniform nanoporous morphology via the dissolving Cd2+ with phosphate ions on the surface of CdS. The resulting CdS electrodes through scalable particle transfer method exhibit nearly tripled photocurrents, with an incident-photon-to-current conversion efficiency (IPCE) at 480 nm exceeding 80% at 0.6 V versus reversible hydrogen electrode (RHE). And the CdS thin films prepared from chemical bath deposition display quadrupled photocurrents after the stir and PEC activation, with an IPCE of 91.7% at 455 nm and 0.6 V versus RHE. With the suppression of photocorrosion in alkaline borate buffer, the activated photoanodes show great stability for solar hydrogen production at the sacrifice of sulfite. This work brings insights into the design of nanoporous metal sulfide semiconductors for solar water splitting.
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Affiliation(s)
- Ying Wang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- Fujian Provincial Key Laboratory of Featured Biochemical and Chemical Materials, Ningde Normal University, Ningde, Fujian, 352100, China
| | - Xiuyu Chen
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
| | - Hao Xiu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
| | - Huanglong Zhuang
- Fujian Provincial Key Laboratory of Featured Biochemical and Chemical Materials, Ningde Normal University, Ningde, Fujian, 352100, China
- Fujian Province University Key Laboratory of Green Energy and Environment Catalysis, College of Chemistry and Materials, Ningde Normal University, Ningde, Fujian, 352100, China
| | - Jianming Li
- Petroleum Geology Research and Laboratory Center, Research Institute of Petroleum Exploration and Development (RIPED), PetroChina, Beijing, 100083, China
| | - Yang Zhou
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
| | - Deyu Liu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100000, China
| | - Yongbo Kuang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, 315201, China
- University of Chinese Academy of Sciences, Beijing, 100000, China
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