Orthogonal Ambipolar Semiconductors with Inherently Multi-Dimensional Responses for the Discriminative Sensing of Chemical Vapors

Numerous examples of field-effect transistor (FET) biosensors and chemical sensors with good sensitivity and selectivity have now been developed. However, effectively discriminating between analytes has required either the use of receptors that selectively bind specific analytes or the fabrication of an array of sensors with varying but nonspecific responses. Both approaches exhibit significant limitations. In the first case, it can be difficult to design sufficiently specific receptors for many compounds, whereas the number of receptors required scales with the number of analytes to be detected, making it impractical to recognize many different compounds. In the second case, existing approaches to FET sensor arrays are generally material-inefficient and provide modest sensitivity. Here, we demonstrate that orthogonal ambipolar semiconductors consisting of semiconducting p-type polymers and n-type small-molecule nanowires with perpendicular in-plane orientations provide a platform with high sensitivity and inherently multi-dimensional response. This allows for discrimination between even closely related derivatives such as aromatic isomers and n-alkyl alcohols varying in length by a single carbon atom resolution using only a single sensor element.

Orthogonal Ambipolar Semiconductor Nanostructures for Complementary Logic Gates

We report orthogonal ambipolar semiconductors that exhibit hole and electron transport in perpendicular directions based on aligned films of nanocrystalline "shish-kebabs" containing poly(3-hexylthiophene) (P3HT) and N,N'-di-n-octyl-3,4,9,10-perylenetetracarboxylic diimide (PDI) as p- and n-type components, respectively. Polarized optical microscopy, scanning electron microscopy, and X-ray diffraction measurements reveal a high degree of in-plane alignment. Relying on the orientation of interdigitated electrodes to enable efficient charge transport from either the respective p- or n-channel materials, we demonstrate semiconductor films with high anisotropy in the sign of charge carriers. Films of these aligned crystalline semiconductors were used to fabricate complementary inverter devices, which exhibited good switching behavior and a high noise margin of 80% of 1/2 Vdd. Moreover, complementary "NAND" and "NOR" logic gates were fabricated and found to exhibit excellent voltage transfer characteristics and low static power consumption. The ability to optimize the performance of these devices, simply by adjusting the solution concentrations of P3HT and PDI, makes this a simple and versatile method for preparing ambipolar organic semiconductor devices and high-performance logic gates. Further, we demonstrate that this method can also be applied to mixtures of PDI with another conjugated polymer, poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene]) (PBTTT), with better hole transport characteristics than P3HT, opening the door to orthogonal ambipolar semiconductors with higher performance.