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Wang Y, Zha Y, Bao C, Hu F, Di Y, Liu C, Xing F, Xu X, Wen X, Gan Z, Jia B. Monolithic 2D Perovskites Enabled Artificial Photonic Synapses for Neuromorphic Vision Sensors. Adv Mater 2024; 36:e2311524. [PMID: 38275007 DOI: 10.1002/adma.202311524] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Revised: 01/23/2024] [Indexed: 01/27/2024]
Abstract
Neuromorphic visual sensors (NVS) based on photonic synapses hold a significant promise to emulate the human visual system. However, current photonic synapses rely on exquisite engineering of the complex heterogeneous interface to realize learning and memory functions, resulting in high fabrication cost, reduced reliability, high energy consumption and uncompact architecture, severely limiting the up-scaled manufacture, and on-chip integration. Here a photo-memory fundamental based on ion-exciton coupling is innovated to simplify synaptic structure and minimize energy consumption. Due to the intrinsic organic/inorganic interface within the crystal, the photodetector based on monolithic 2D perovskite exhibits a persistent photocurrent lasting about 90 s, enabling versatile synaptic functions. The electrical power consumption per synaptic event is estimated to be≈1.45 × 10-16 J, one order of magnitude lower than that in a natural biological system. Proof-of-concept image preprocessing using the neuromorphic vision sensors enabled by photonic synapse demonstrates 4 times enhancement of classification accuracy. Furthermore, getting rid of the artificial neural network, an expectation-based thresholding model is put forward to mimic the human visual system for facial recognition. This conceptual device unveils a new mechanism to simplify synaptic structure, promising the transformation of the NVS and fostering the emergence of next generation neural networks.
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Affiliation(s)
- Yun Wang
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Yanfang Zha
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Chunxiong Bao
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Fengrui Hu
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Yunsong Di
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Cihui Liu
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Fangjian Xing
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Xingyuan Xu
- State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, P. R. China
| | - Xiaoming Wen
- Centre for Atomaterials and Nanomanufacturing, School of Science, RMIT University, Melbourne, Victoria, 3000, Australia
| | - Zhixing Gan
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, P. R. China
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China
- College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, P. R. China
| | - Baohua Jia
- Centre for Atomaterials and Nanomanufacturing, School of Science, RMIT University, Melbourne, Victoria, 3000, Australia
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Zhang L, Zhang Y, Liu F, Chen Q, Lian Y, Ma Q. On-Chip Photonic Synapses with All-Optical Memory and Neural Network Computation. Micromachines (Basel) 2022; 14:74. [PMID: 36677135 PMCID: PMC9862829 DOI: 10.3390/mi14010074] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/08/2022] [Revised: 12/22/2022] [Accepted: 12/22/2022] [Indexed: 06/17/2023]
Abstract
Inspired by the human brain, neural network computing was expected to break the bottleneck of traditional computing, but the integrated design still faces great challenges. Here, a readily integrated membrane-system photonic synapse was demonstrated. By pre-pulse training at 1064 nm (cutoff wavelength), the photonic synapse can be regulated both excitatory and inhibitory at tunable wavelengths (1200-2000 nm). Furthermore, more weights and memory functions were shown through the photonic synapse integrated network. Additionally, the digital recognition function of the single-layer perceptron neural network constructed by photonic synapses has been successfully demonstrated. Most of the biological synaptic functions were realized by the photonic synaptic network, and it had the advantages of compact structure, scalable, adjustable wavelength, and so on, which opens up a new idea for the study of the neural synaptic network.
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Affiliation(s)
- Lulu Zhang
- MOE Key Laboratory of Trans-Scale Laser Manufacturing Technology, Beijing University of Technology, Beijing 100124, China
- Beijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, China
- Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Yongzhi Zhang
- MOE Key Laboratory of Trans-Scale Laser Manufacturing Technology, Beijing University of Technology, Beijing 100124, China
- Beijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, China
- Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Furong Liu
- MOE Key Laboratory of Trans-Scale Laser Manufacturing Technology, Beijing University of Technology, Beijing 100124, China
- Beijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, China
- Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Qingyuan Chen
- MOE Key Laboratory of Trans-Scale Laser Manufacturing Technology, Beijing University of Technology, Beijing 100124, China
- Beijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, China
- Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Yangbo Lian
- MOE Key Laboratory of Trans-Scale Laser Manufacturing Technology, Beijing University of Technology, Beijing 100124, China
- Beijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, China
- Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
| | - Quanlong Ma
- MOE Key Laboratory of Trans-Scale Laser Manufacturing Technology, Beijing University of Technology, Beijing 100124, China
- Beijing Engineering Research Center of Laser Technology, Beijing University of Technology, Beijing 100124, China
- Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
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Kumar M, Abbas S, Kim J. All-Oxide-Based Highly Transparent Photonic Synapse for Neuromorphic Computing. ACS Appl Mater Interfaces 2018; 10:34370-34376. [PMID: 30207159 DOI: 10.1021/acsami.8b10870] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
The neuromorphic system processes enormous information even with very low energy consumption, which practically can be achieved with photonic artificial synapse. Herein, a photonic artificial synapse is demonstrated based on an all-oxide highly transparent device. The device consists of conformally grown In2O3/ZnO thin films on a fluorine-doped tin oxide/glass substrate. The device showed a loop opening in current-voltage characteristics, which was attributed to charge trapping/detrapping. Ultraviolet illumination-induced versatile features such as short-term/long-term plasticity and paired-pulse facilitation were truly confirmed. Further, photonic potentiation and electrical habituation were implemented. This study paves the way to develop a device in which current can be modulated under the action of optical stimuli, serving as a fundamental step toward the realization of low-cost synaptic behavior.
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Wang Y, Lv Z, Chen J, Wang Z, Zhou Y, Zhou L, Chen X, Han ST. Photonic Synapses Based on Inorganic Perovskite Quantum Dots for Neuromorphic Computing. Adv Mater 2018; 30:e1802883. [PMID: 30063261 DOI: 10.1002/adma.201802883] [Citation(s) in RCA: 161] [Impact Index Per Article: 26.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2018] [Revised: 06/21/2018] [Indexed: 05/22/2023]
Abstract
Inspired by the biological neuromorphic system, which exhibits a high degree of connectivity to process huge amounts of information, photonic memory is expected to pave a way to overcome the von Neumann bottleneck for nonconventional computing. Here, a photonic flash memory based on all-inorganic CsPbBr3 perovskite quantum dots (QDs) is demonstrated. The heterostructure formed between the CsPbBr3 QDs and semiconductor layer serves as a basis for optically programmable and electrically erasable characteristics of the memory device. Furthermore, synapse functions including short-term plasticity, long-term plasticity, and spike-rate-dependent plasticity are emulated at the device level. The photonic potentiation and electrical habituation are implemented and the synaptic weight exhibits multiple wavelength response from 365, 450, 520 to 660 nm. These results may locate the stage for further thrilling novel advances in perovskite-based memories.
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Affiliation(s)
- Yan Wang
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ziyu Lv
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jinrui Chen
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Zhanpeng Wang
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Li Zhou
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Xiaoli Chen
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
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