Gate-bias stability of triple-gated feedback field-effect transistors with silicon nanosheet channels

In this study, we investigate the gate-bias stability of triple-gated feedback field-effect transistors (FBFETs) with Si nanosheet channels. The subthreshold swing (SS) of FBFETs increases from 0.3 mV dec-1to 60 and 80 mV dec-1inp- andn-channel modes, respectively, when a positive bias stress (PBS) is applied for 1000 s. In contrast, the SS value does not change even after a negative bias stress (NBS) is applied for 1000 s. The difference in the switching characteristics under PBS and NBS is attributed to the ability of the interface traps to readily gain electrons from the inversion layer. The switching characteristics deteriorated by PBS are completely recovered after annealing at 300 °C for 10 min, and the characteristics remain stable even after PBS is applied again for 1000 s.

Constructing a Low-Cost Si-NSs@C/NG Composite by a Ball Milling-Catalytic Pyrolysis Method for Lithium Storage

Silicon-based composites are promising candidates as the next-generation anode materials for high-performance lithium-ion batteries (LIBs) due to their high theoretical specific capacity, abundant reserves, and reliable security. However, expensive raw materials and complicated preparation processes give silicon carbon anode a high price and poor batch stability, which become a stumbling block to its large-scale practical application. In this work, a novel ball milling-catalytic pyrolysis method is developed to fabricate a silicon nanosheet@amorphous carbon/N-doped graphene (Si-NSs@C/NG) composite with cheap high-purity micron-size silica powder and melamine as raw materials. Through systematic characterizations such as XRD, Raman, SEM, TEM and XPS, the formation process of NG and a Si-NSs@C/NG composite is graphically demonstrated. Si-NSs@C is uniformly intercalated between NG nanosheets, and these two kinds of two-dimensional (2D) materials are combined in a surface-to-surface manner, which immensely buffers the stress changes caused by volume expansion and contraction of Si-NSs. Attributed to the excellent electrical conductivity of graphene layer and the coating layer, the initial reversible specific capacity of Si-NSs@C/NG is 807.9 mAh g^-1 at 200 mA g^-1, with a capacity retention rate of 81% in 120 cycles, exhibiting great potential for application as an anode material for LIBs. More importantly, the simple and effective process and cheap precursors could greatly reduce the production cost and promote the commercialization of silicon/carbon composites.

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

In this paper, we use the spin-on-dopant technique for phosphorus doping to improve the photoelectric properties of soft-chemical-prepared silicon nanosheets. It was found that the luminescence intensity and luminescence lifetime of the doped samples was approximately 4 fold that of the undoped samples, due to passivation of the surface defects by phosphorus doping. Meanwhile, phosphorus doping combined with high-temperature heat treatment can reduce the resistivity of multilayer silicon nanosheets by 6 fold compared with that of as-prepared samples. In conclusion, our work brings soft-chemical-prepared silicon nanosheets one step closer to practical application in the field of optoelectronics.