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Guan H, Zhou S, Fu S, Pu D, Chen X, Ge Y, Wang S, Wang C, Cui H, Liang J, Hu X, Meng W, Fang G, Ke W. Regulating Crystal Orientation via Ligand Anchoring Enables Efficient Wide-Bandgap Perovskite Solar Cells and Tandems. Adv Mater 2024; 36:e2307987. [PMID: 37956304 DOI: 10.1002/adma.202307987] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Revised: 10/17/2023] [Indexed: 11/15/2023]
Abstract
Wide-bandgap (WBG) perovskite solar cells have attracted considerable interest for their potential applications in tandem solar cells. However, the predominant obstacles impeding their widespread adoption are substantial open-circuit voltage (VOC ) deficit and severe photo-induced halide segregation. To tackle these challenges, a crystal orientation regulation strategy by introducing dodecyl-benzene-sulfonic-acid as an additive in perovskite precursors is proposed. This method significantly promotes the desired crystal orientation, passivates defects, and mitigates photo-induced halide phase segregation in perovskite films, leading to substantially reduced nonradiative recombination, minimized VOC deficits, and enhanced operational stability of the devices. The resulting 1.66 eV bandgap methylamine-free perovskite solar cells achieve a remarkable power conversion efficiency (PCE) of 22.40% (certified at 21.97%), with the smallest VOC deficit recorded at 0.39 V. Furthermore, the fabricated semitransparent WBG devices exhibit a competitive PCE of 20.13%. Consequently, four-terminal tandem cells comprising WBG perovskite top cells and 1.25 eV bandgap perovskite bottom cells showcase an impressive PCE of 28.06% (stabilized 27.92%), demonstrating great potential for efficient multijunction tandem solar cell applications.
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Affiliation(s)
- Hongling Guan
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
- Shenzhen Institute, Wuhan University, Shenzhen, 518055, P. R. China
| | - Shun Zhou
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Shiqiang Fu
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Dexin Pu
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Xuepeng Chen
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yansong Ge
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Shuxin Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Chen Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Hongsen Cui
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jiwei Liang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Xuzhi Hu
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Weiwei Meng
- South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Guojia Fang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Weijun Ke
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
- Shenzhen Institute, Wuhan University, Shenzhen, 518055, P. R. China
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Wang X, Zhang D, Liu B, Wu X, Jiang X, Zhang S, Wang Y, Gao D, Wang L, Wang H, Huang Z, Xie X, Chen T, Xiao Z, He Q, Xiao S, Zhu Z, Yang S. Highly Efficient Perovskite/Organic Tandem Solar Cells Enabled by Mixed-Cation Surface Modulation. Adv Mater 2023:e2305946. [PMID: 37547965 DOI: 10.1002/adma.202305946] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2023] [Revised: 07/25/2023] [Indexed: 08/08/2023]
Abstract
Perovskite/organic tandem solar cells (POTSCs) are gaining attention due to their easy fabrication, potential to surpass the S-Q limit, and superior flexibility. However, the low power conversion efficiencies (PCEs) of wide bandgap (Eg) perovskite solar cells (PVSCs) have hindered their development. This work presents a novel and effective mixed-cation passivation strategy (CE) to passivate various types of traps in wide-Eg perovskite. The complementary effect of 4-trifluoro phenethylammonium (CF3 -PEA+ , denoted as CA+ ) and ethylenediammonium (EDA2+ , denoted as EA2+ ) reduces both electron/hole defect densities and non-radiative recombination rate, resulting in a record open-circuit voltage (Voc ) of wide-Eg PVSCs (1.35 V) and a high fill factor (FF) of 83.29%. These improvements lead to a record PCE of 24.47% when applied to fabricated POTSCs, the highest PCE to date. Furthermore, unencapsulated POTSCs exhibit excellent photo and thermal stability, retaining over 90% of their initial PCE after maximum power point (MPP) tracking or exposure to 60 °C for 500 h. These findings imply that the synergic effect of surface passivators is a promising strategy to achieve high-efficiency and stable wide-Eg PVSCs and corresponding POTSCs.
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Affiliation(s)
- Xue Wang
- CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, 230026, China
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
- Center for Advanced Material Diagnostic Technology and College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, China
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Dong Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Baoze Liu
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Xin Wu
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Xiaofen Jiang
- CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, 230026, China
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Shoufeng Zhang
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Yan Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Danpeng Gao
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Lina Wang
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Haolin Wang
- CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, 230026, China
| | - Zongming Huang
- CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, 230026, China
| | - Xiangfan Xie
- Center for Advanced Material Diagnostic Technology and College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, China
| | - Tao Chen
- CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, 230026, China
| | - Zhengguo Xiao
- CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, 230026, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Shuang Xiao
- Center for Advanced Material Diagnostic Technology and College of Engineering Physics, Shenzhen Technology University, Shenzhen, 518118, China
| | - Zonglong Zhu
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, Guangdong, 518057, China
| | - Shangfeng Yang
- CAS Key Laboratory of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, Department of Materials Science and Engineering, University of Science and Technology of China, Hefei, 230026, China
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He R, Yi Z, Luo Y, Luo J, Wei Q, Lai H, Huang H, Zou B, Cui G, Wang W, Xiao C, Ren S, Chen C, Wang C, Xing G, Fu F, Zhao D. Pure 2D Perovskite Formation by Interfacial Engineering Yields a High Open-Circuit Voltage beyond 1.28 V for 1.77-eV Wide-Bandgap Perovskite Solar Cells. Adv Sci (Weinh) 2022; 9:e2203210. [PMID: 36372551 PMCID: PMC9799022 DOI: 10.1002/advs.202203210] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/31/2022] [Revised: 10/05/2022] [Indexed: 06/16/2023]
Abstract
Surface post-treatment using ammonium halides effectively reduces large open-circuit voltage (VOC ) losses in bromine-rich wide-bandgap (WBG) perovskite solar cells (PSCs). However, the underlying mechanism still remains unclear and the device efficiency lags largely behind. Here, a facile strategy of precisely tailoring the phase purity of 2D perovskites on top of 3D WBG perovskite and realizing high device efficiency is reported. The transient absorption spectra, cross-sectional confocal photoluminescence mapping, and cross-sectional Kelvin probe force microscopy are combined to demonstrate optimal defect passivation effect and surface electric-field of pure n = 1 2D perovskites formed atop 3D WBG perovskites via low-temperature annealing. As a result, the inverted champion device with 1.77-eV perovskite absorber achieves a high VOC of 1.284 V and a power conversion efficiency (PCE) of 17.72%, delivering the smallest VOC deficit of 0.486 V among WBG PSCs with a bandgap higher than 1.75 eV. This enables one to achieve a four-terminal all-perovskite tandem solar cell with a PCE exceeding 25% by combining with a 1.25-eV low-bandgap PSC.
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Affiliation(s)
- Rui He
- College of Materials Science and Engineering & Institute of New Energy and Low‐Carbon TechnologyEngineering Research Center of Alternative Energy Materials & DevicesMinistry of EducationSichuan UniversityChengdu610065P. R. China
| | - Zongjin Yi
- College of Materials Science and Engineering & Institute of New Energy and Low‐Carbon TechnologyEngineering Research Center of Alternative Energy Materials & DevicesMinistry of EducationSichuan UniversityChengdu610065P. R. China
| | - Yi Luo
- College of Materials Science and Engineering & Institute of New Energy and Low‐Carbon TechnologyEngineering Research Center of Alternative Energy Materials & DevicesMinistry of EducationSichuan UniversityChengdu610065P. R. China
| | - Jincheng Luo
- College of Materials Science and Engineering & Institute of New Energy and Low‐Carbon TechnologyEngineering Research Center of Alternative Energy Materials & DevicesMinistry of EducationSichuan UniversityChengdu610065P. R. China
| | - Qi Wei
- Joint Key Laboratory of the Ministry of EducationInstitute of Applied Physics and Materials EngineeringUniversity of MacauAvenida da Universidade, TaipaMacau999078P. R. China
| | - Huagui Lai
- Laboratory for Thin Films and PhotovoltaicsEmpa – Swiss Federal Laboratories for Materials Science and TechnologyUeberlandstrasse 129DuebendorfCH‐8600Switzerland
| | - Hao Huang
- Guangxi Key Laboratory of Processing for Non‐ferrous Metals and Featured MaterialsSchool of Resources, Environment and MaterialsGuangxi UniversityNanning530004P. R. China
| | - Bingsuo Zou
- Guangxi Key Laboratory of Processing for Non‐ferrous Metals and Featured MaterialsSchool of Resources, Environment and MaterialsGuangxi UniversityNanning530004P. R. China
| | - Guangyao Cui
- College of Materials Science and Engineering & Institute of New Energy and Low‐Carbon TechnologyEngineering Research Center of Alternative Energy Materials & DevicesMinistry of EducationSichuan UniversityChengdu610065P. R. China
| | - Wenwu Wang
- College of Materials Science and Engineering & Institute of New Energy and Low‐Carbon TechnologyEngineering Research Center of Alternative Energy Materials & DevicesMinistry of EducationSichuan UniversityChengdu610065P. R. China
| | - Chuanxiao Xiao
- Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo New Material Testing and Evaluation Center Co., LtdNingbo City315201P. R. China
| | - Shengqiang Ren
- College of Materials Science and Engineering & Institute of New Energy and Low‐Carbon TechnologyEngineering Research Center of Alternative Energy Materials & DevicesMinistry of EducationSichuan UniversityChengdu610065P. R. China
| | - Cong Chen
- College of Materials Science and Engineering & Institute of New Energy and Low‐Carbon TechnologyEngineering Research Center of Alternative Energy Materials & DevicesMinistry of EducationSichuan UniversityChengdu610065P. R. China
| | - Changlei Wang
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and TechnologyKey Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of ChinaSoochow UniversitySuzhou215006P. R. China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of EducationInstitute of Applied Physics and Materials EngineeringUniversity of MacauAvenida da Universidade, TaipaMacau999078P. R. China
| | - Fan Fu
- Laboratory for Thin Films and PhotovoltaicsEmpa – Swiss Federal Laboratories for Materials Science and TechnologyUeberlandstrasse 129DuebendorfCH‐8600Switzerland
| | - Dewei Zhao
- College of Materials Science and Engineering & Institute of New Energy and Low‐Carbon TechnologyEngineering Research Center of Alternative Energy Materials & DevicesMinistry of EducationSichuan UniversityChengdu610065P. R. China
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Zhang C, Liu C, Gao Y, Zhu S, Chen F, Huang B, Xie Y, Liu Y, Ma M, Wang Z, Wu S, Schropp REI, Mai Y. Br Vacancy Defects Healed Perovskite Indoor Photovoltaic Modules with Certified Power Conversion Efficiency Exceeding 36. Adv Sci (Weinh) 2022; 9:e2204138. [PMID: 36253155 PMCID: PMC9685472 DOI: 10.1002/advs.202204138] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2022] [Revised: 09/09/2022] [Indexed: 05/29/2023]
Abstract
Indoor photovoltaics (IPVs) are expected to power the Internet of Things ecosystem, which is attracting ever-increasing attention as part of the rapidly developing distributed communications and electronics technology. The power conversion efficiency of IPVs strongly depends on the match between typical indoor light spectra and the band gap of the light absorbing layer. Therefore, band-gap tunable materials, such as metal-halide perovskites, are specifically promising candidates for approaching the indoor illumination efficiency limit of ∼56%. However, perovskite materials with ideal band gap for indoor application generally contain high bromine (Br) contents, causing inferior open-circuit voltage (VOC ). By fabricating a series of wide-bandgap perovskites (Cs0.17 FA0.83 PbI3- x Brx , 0.6 ≤ x ≤ 1.6) with varying Br contents and related band gaps, it is found that, the high Br vacancy (VBr ) defect density is a significant reason that leading to large VOC deficits apart from the well-accepted halide segregation. The introduction of I-rich alkali metal small-molecule compounds is demonstrated to suppress the VBr and increase the VOC of perovskite IPVs up to 1.05 V under 1000 lux light-emitting diode illumination, one of the highest VOC values reported so far. More importantly, the modules are sent for independent certification and have gained a record efficiency of 36.36%.
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Affiliation(s)
- Cuiling Zhang
- Institute of New Energy TechnologyCollege of Information Science and TechnologyGuangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipmentand Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education InstitutesJinan UniversityGuangzhou510632China
| | - Chong Liu
- Institute of New Energy TechnologyCollege of Information Science and TechnologyGuangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipmentand Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education InstitutesJinan UniversityGuangzhou510632China
| | - Yanyan Gao
- Institute of New Energy TechnologyCollege of Information Science and TechnologyGuangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipmentand Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education InstitutesJinan UniversityGuangzhou510632China
| | - Shusheng Zhu
- Institute of New Energy TechnologyCollege of Information Science and TechnologyGuangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipmentand Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education InstitutesJinan UniversityGuangzhou510632China
| | - Fang Chen
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhenGuangdong518055China
| | - Boyuan Huang
- Department of Materials Science and EngineeringSouthern University of Science and TechnologyShenzhenGuangdong518055China
| | - Yi Xie
- Institute of New Energy TechnologyCollege of Information Science and TechnologyGuangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipmentand Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education InstitutesJinan UniversityGuangzhou510632China
| | - Yaqing Liu
- Institute of New Energy TechnologyCollege of Information Science and TechnologyGuangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipmentand Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education InstitutesJinan UniversityGuangzhou510632China
| | - Mengen Ma
- Institute of New Energy TechnologyCollege of Information Science and TechnologyGuangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipmentand Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education InstitutesJinan UniversityGuangzhou510632China
| | - Zhen Wang
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Optical Information Materials and TechnologySouth China Academy of Advanced Optoelectronics South China Normal UniversityGuangzhou510006China
| | - Shaohang Wu
- Institute of New Energy TechnologyCollege of Information Science and TechnologyGuangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipmentand Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education InstitutesJinan UniversityGuangzhou510632China
| | - Ruud E. I. Schropp
- Institute of New Energy TechnologyCollege of Information Science and TechnologyGuangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipmentand Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education InstitutesJinan UniversityGuangzhou510632China
| | - Yaohua Mai
- Institute of New Energy TechnologyCollege of Information Science and TechnologyGuangdong Engineering Research Center of Thin‐Film Photovoltaic Processes and Equipmentand Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education InstitutesJinan UniversityGuangzhou510632China
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Xie YM, Zeng Z, Xu X, Ma C, Ma Y, Li M, Lee CS, Tsang SW. FA-Assistant Iodide Coordination in Organic-Inorganic Wide-Bandgap Perovskite with Mixed Halides. Small 2020; 16:e1907226. [PMID: 32049427 DOI: 10.1002/smll.201907226] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2019] [Revised: 01/15/2020] [Indexed: 05/24/2023]
Abstract
Mixed-halide wide-bandgap perovskites are key components for the development of high-efficiency tandem structured devices. However, mixed-halide perovskites usually suffer from phase-impurity and high defect density issues, where the causes are still unclear. By using in situ photoluminescence (PL) spectroscopy, it is found that in methylammonium (MA+ )-based mixed-halide perovskites, MAPb(I0.6 Br0.4 )3 , the halide composition of the spin-coated perovskite films is preferentially dominated by the bromide ions (Br- ). Additional thermal energy is required to initiate the insertion of iodide ions (I- ) to achieve the stoichiometric balance. Notably, by incorporating a small amount of formamidinium ions (FA+ ) in the precursor solution, it can effectively facilitate the I- coordination in the perovskite framework during the spin-coating and improve the composition homogeneity of the initial small particles. The aggregation of these homogenous small particles is found to be essential to achieve uniform and high-crystallinity perovskite film with high Br- content. As a result, high-quality MA0.9 FA0.1 Pb(I0.6 Br0.4 )3 perovskite film with a bandgap (Eg ) of 1.81 eV is achieved, along with an encouraging power-conversion-efficiency of 17.1% and open-circuit voltage (Voc ) of 1.21 V. This work also demonstrates the in situ PL can provide a direct observation of the dynamic of ion coordination during the perovskite crystallization.
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Affiliation(s)
- Yue-Min Xie
- State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, P. R. China
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, P. R. China
| | - Zixin Zeng
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, P. R. China
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, P. R. China
| | - Xiuwen Xu
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, P. R. China
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, P. R. China
| | - Chunqing Ma
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, P. R. China
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, P. R. China
| | - Yuhui Ma
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, P. R. China
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, P. R. China
| | - Menglin Li
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, P. R. China
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, P. R. China
| | - Chun-Sing Lee
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, P. R. China
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, P. R. China
| | - Sai-Wing Tsang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, P. R. China
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, P. R. China
- City University of Hong Kong Shenzhen Research Institute, Shenzhen, 518057, P. R. China
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Kim J, Saidaminov MI, Tan H, Zhao Y, Kim Y, Choi J, Jo JW, Fan J, Quintero-Bermudez R, Yang Z, Quan LN, Wei M, Voznyy O, Sargent EH. Amide-Catalyzed Phase-Selective Crystallization Reduces Defect Density in Wide-Bandgap Perovskites. Adv Mater 2018; 30:e1706275. [PMID: 29441615 DOI: 10.1002/adma.201706275] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/29/2017] [Revised: 12/08/2017] [Indexed: 05/24/2023]
Abstract
Wide-bandgap (WBG) formamidinium-cesium (FA-Cs) lead iodide-bromide mixed perovskites are promising materials for front cells well-matched with crystalline silicon to form tandem solar cells. They offer avenues to augment the performance of widely deployed commercial solar cells. However, phase instability, high open-circuit voltage (Voc ) deficit, and large hysteresis limit this otherwise promising technology. Here, by controlling the crystallization of FA-Cs WBG perovskite with the aid of a formamide cosolvent, light-induced phase segregation and hysteresis in perovskite solar cells are suppressed. The highly polar solvent additive formamide induces direct formation of the black perovskite phase, bypassing the yellow phases, thereby reducing the density of defects in films. As a result, the optimized WBG perovskite solar cells (PSCs) (Eg ≈ 1.75 eV) exhibit a high Voc of 1.23 V, reduced hysteresis, and a power conversion efficiency (PCE) of 17.8%. A PCE of 15.2% on 1.1 cm2 solar cells, the highest among the reported efficiencies for large-area PSCs having this bandgap is also demonstrated. These perovskites show excellent phase stability and thermal stability, as well as long-term air stability. They maintain ≈95% of their initial PCE after 1300 h of storage in dry air without encapsulation.
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Affiliation(s)
- Junghwan Kim
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Makhsud I Saidaminov
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Hairen Tan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Yicheng Zhao
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Younghoon Kim
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Jongmin Choi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Jea Woong Jo
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - James Fan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Rafael Quintero-Bermudez
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Zhenyu Yang
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Li Na Quan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Mingyang Wei
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Oleksandr Voznyy
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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