Light concentration and electron transfer in plasmonic-photonic Ag,Au modified Mo-BiVO4 inverse opal photoelectrocatalysts

Plasmonic photocatalysis based on metal-semiconductor heterojunctions is considered a key strategy to evade the inherent limitations of poor light harvesting and charge separation of semiconductor photocatalysts. It can be profitably combined with three-dimensional photonic crystals (PCs) that offer an ideal scaffold for loading plasmonic nanoparticles and a unique architecture to intensify photon capture. In this work, Mo-doped BiVO4 inverse opals were applied as visible light-responsive photonic hosts of Ag and/or Au plasmonic nanoparticles in order to exploit the synergy of plasmonic and photonic amplification effects with interfacial charge transfer for the photoelectrocatalytic degradation of recalcitrant pharmaceutical contaminants under visible light. Photoelectrochemical evaluation indicated a major contribution from hot spot-assisted local field enhancement, most pronounced for Ag/Mo-BiVO4 PCs due to the spectral overlap of the localized surface plasmon resonance with the electronic absorption and blue-edge slow photon region of Mo-BiVO4 PCs, in contrast to weak plasmonic sensitization effects for the Au-modified PCs. The diverse band alignment at the metal-semiconductor interfaces resulted in the enhanced photoelectrocatalytic degradation of tetracycline broad spectrum antibiotic by Ag/Mo-BiVO4 and the refractory ibuprofen drug by (Ag,Au)/Mo-BiVO4, attributed to the enhanced charge separation by electron transfer toward Ag nanoparticles. Combination of visible light activated semiconductor PCs and plasmonic nanoparticles with suitable band alignment and photonic band gap may provide a versatile approach for the rational design of efficient plasmonic-photonic photoeletrocatalysts.

Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion

Properly tuning the Fermi level position in topological insulators is of vital importance to tailor their spin-polarized electronic transport and to improve the efficiency of any functional device based on them. Here, we report the full in situ metal organic chemical vapor deposition (MOCVD) and study of a highly crystalline Bi2Te3/Sb2Te3 topological insulator heterostructure on top of large area (4″) Si(111) substrates. The bottom Sb2Te3 layer serves as an ideal seed layer for the growth of highly crystalline Bi2Te3 on top, also inducing a remarkable shift of the Fermi level to place it very close to the Dirac point, as visualized by angle-resolved photoemission spectroscopy. To exploit such ideal topologically protected surface states, we fabricate the simple spin-charge converter Si(111)/Sb2Te3/Bi2Te3/Au/Co/Au and probe the spin-charge conversion (SCC) by spin pumping ferromagnetic resonance. A large SCC is measured at room temperature and is interpreted within the inverse Edelstein effect, thus resulting in a conversion efficiency of λIEEE ∼ 0.44 nm. Our results demonstrate the successful tuning of the surface Fermi level of Bi2Te3 when grown on top of Sb2Te3 with a full in situ MOCVD process, which is highly interesting in view of its future technology transfer.

Co-assembled MoS2-TiO2 Inverse Opal Photocatalysts for Visible Light-Activated Pharmaceutical Photodegradation

Heterostructured photocatalytic materials in the form of photonic crystals have been attracting attention for their unique light harvesting ability that can be ideally combined with judicious compositional modifications toward the development of visible light-activated (VLA) photonic catalysts, though practical environmental applications, such as the degradation of pharmaceutical emerging contaminants, have been rarely reported. Herein, heterostructured MoS2-TiO2 inverse opal films are introduced as highly active immobilized photocatalysts for the VLA degradation of tetracycline and ciprofloxacin broad-spectrum antibiotics as well as salicylic acid. A single-step co-assembly method was implemented for the challenging incorporation of MoS2 nanosheets into the nanocrystalline inverse opal walls. Compositional tuning and photonic band gap engineering of the MoS2-TiO2 photonic films showed that integration of low amounts of MoS2 nanosheets in the inverse opal framework maintains intact the periodic macropore structure and enhances the available surface area, resulting in efficient VLA antibiotic degradation far beyond the performance of benchmark TiO2 films. The combination of broadband MoS2 visible light absorption and photonic-assisted light trapping together with the enhanced charge separation that enables the generation of reactive oxygen species via firm interfacial coupling between MoS2 nanosheets and TiO2 nanoparticles is concluded as a competent approach for pharmaceutical abatement in water bodies.

Engineering Heat Transport Across Epitaxial Lattice-Mismatched van der Waals Heterointerfaces

Artificially engineered 2D materials offer unique physical properties for thermal management, surpassing naturally occurring materials. Here, using van der Waals epitaxy, we demonstrate the ability to engineer extremely insulating thermal metamaterials based on atomically thin lattice-mismatched Bi2Se3/MoSe2 superlattices and graphene/PdSe2 heterostructures with exceptional thermal resistances (70-202 m2 K/GW) and ultralow cross-plane thermal conductivities (0.012-0.07 W/mK) at room temperature, comparable to those of amorphous materials. Experimental data obtained using frequency-domain thermoreflectance and low-frequency Raman spectroscopy, supported by tight-binding phonon calculations, reveal the impact of lattice mismatch, phonon-interface scattering, size effects, temperature, and interface thermal resistance on cross-plane heat dissipation, uncovering different thermal transport regimes and the dominant role of long-wavelength phonons. Our findings provide essential insights into emerging synthesis and thermal characterization methods and valuable guidance for the development of large-area heteroepitaxial van der Waals films of dissimilar materials with tailored thermal transport characteristics.

Significant enhancement of ferromagnetism above room temperature in epitaxial 2D van der Waals ferromagnet Fe5-δGeTe2/Bi2Te3 heterostructures

Two-dimensional (2D) van der Waals (vdW) ferromagnetic metals Fe_xGeTe₂ with x = 3-5 have raised significant interest in the scientific community. Fe₅GeTe₂ shows prospects for spintronic applications since the Curie temperature T_c has been reported near or higher than 300 K. In the present work, epitaxial Fe_5-δGeTe₂ (FGT) heterostructures were grown by Molecular Beam Epitaxy (MBE) on insulating crystalline substrates. The FGT films were combined with Bi₂Te₃ topological insulator (TI) aiming to investigate the possible beneficial effect of the TI on the magnetic properties of FGT. FGT/Bi₂Te₃ films were compared to FGT capped only with AlO_x to prevent oxidation. SQUID and MOKE measurements revealed that the growth of Bi₂Te₃ TI on FGT films significantly enhances the saturation magnetization of FGT as well as the T_c well above room temperature (RT) reaching record values of 570 K. First-principles calculations predict a shift of the Fermi level and an associated enhancement of the majority spin (primarily) as well as the total density of states at the Fermi level suggesting that effective doping of FGT from Bi₂Te₃ could explain the enhancement of ferromagnetism in FGT. It is also predicted that strain induced stabilization of a high magnetic moment phase in FGT/Bi₂Te₃ could be an alternative explanation of magnetization and T_c enhancement. Ferromagnetic resonance measurements evidence an enhanced broadening in the FGT/Bi₂Te₃ heterostructure when compared to FGT. We obtain a large spin mixing conductance of g↑↓eff = 4.4 × 10²⁰ m^-2, which demonstrates the great potential of FGT/Bi₂Te₃ systems for spin-charge conversion applications at room temperature.

Visible Light Trapping against Charge Recombination in FeOx-TiO2 Photonic Crystal Photocatalysts

Tailoring metal oxide photocatalysts in the form of heterostructured photonic crystals has spurred particular interest as an advanced route to simultaneously improve harnessing of solar light and charge separation relying on the combined effect of light trapping by macroporous periodic structures and compositional materials' modifications. In this work, surface deposition of FeOx nanoclusters on TiO2 photonic crystals is investigated to explore the interplay of slow-photon amplification, visible light absorption, and charge separation in FeOx-TiO2 photocatalytic films. Photonic bandgap engineered TiO2 inverse opals deposited by the convective evaporation-induced co-assembly method were surface modified by successive chemisorption-calcination cycles using Fe(III) acetylacetonate, which allowed the controlled variation of FeOx loading on the photonic films. Low amounts of FeOx nanoclusters on the TiO2 inverse opals resulted in diameter-selective improvements of photocatalytic performance on salicylic acid degradation and photocurrent density under visible light, surpassing similarly modified P25 films. The observed enhancement was related to the combination of optimal light trapping and charge separation induced by the FeOx-TiO2 interfacial coupling. However, an increase of the FeOx loading resulted in severe performance deterioration, particularly prominent under UV-Vis light, attributed to persistent surface recombination via diverse defect d-states.

Anisotropic Thermal Conductivity of Crystalline Layered SnSe2

The degree of thermal anisotropy affects critically key device-relevant properties of layered two-dimensional materials. Here, we systematically study the in-plane and cross-plane thermal conductivity of crystalline SnSe₂ films of varying thickness (16-190 nm) and uncover a thickness-independent thermal conductivity anisotropy ratio of about ∼8.4. Experimental data obtained using Raman thermometry and frequency domain thermoreflectance showed that the in-plane and cross-plane thermal conductivities monotonically decrease by a factor of 2.5 with decreasing film thickness compared to the bulk values. Moreover, we find that the temperature-dependence of the in-plane component gradually decreases as the film becomes thinner, and in the range from 300 to 473 K it drops by more than a factor of 2. Using the mean free path reconstruction method, we found that phonons with MFP ranging from ∼1 to 53 and from 1 to 30 nm contribute to 50% of the total in-plane and cross-plane thermal conductivity, respectively.

Ultrathin epitaxial Bi film growth on 2D HfTe2template

Among ultrathin monoelemental two-dimensional (2D) materials, bismuthene, the single layer of heavier group-VΑ element bismuth (Bi), has been predicted to have large non trivial gap. Here, we demonstrate the growth of Bi films by molecular beam epitaxy on 2D-HfTe₂template. At the initial stage of Bi deposition (1-2 bilayers, BL), both the pseudocubic Bi(110) and the hexagonal Bi(111) phases are formed. When reaching 3 BL Bi, a transformation to pure hexagonal Bi(111) occurs. The electronic band structure of 3 BL Bi(111) films was measured by angle-resolved photoemission spectroscopy showing very good matching with the density functional theory band structure calculations of 3 BL free standing Bi(111). The grown Bi(111) thin film was capped with a protective Al₂O₃layer and its stability under ambient conditions, necessary for practical applications and device fabrication, was confirmed by x-ray photoelectron spectroscopy and Raman spectroscopy.

Graphene Quantum Dot-TiO2 Photonic Crystal Films for Photocatalytic Applications

Photonic crystal structuring has emerged as an advanced method to enhance solar light harvesting by metal oxide photocatalysts along with rational compositional modifications of the materials’ properties. In this work, surface functionalization of TiO₂ photonic crystals by blue luminescent graphene quantum dots (GQDs), n–π* band at ca. 350 nm, is demonstrated as a facile, environmental benign method to promote photocatalytic activity by the combination of slow photon-assisted light trapping with GQD-TiO₂ interfacial electron transfer. TiO₂ inverse opal films fabricated by the co-assembly of polymer colloidal spheres with a hydrolyzed titania precursor were post-modified by impregnation in aqueous GQDs suspension without any structural distortion. Photonic band gap engineering by varying the inverse opal macropore size resulted in selective performance enhancement for both salicylic acid photocatalytic degradation and photocurrent generation under UV–VIS and visible light, when red-edge slow photons overlapped with the composite’s absorption edge, whereas stop band reflection was attenuated by the strong UVA absorbance of the GQD-TiO₂ photonic films. Photoelectrochemical and photoluminescence measurements indicated that the observed improvement, which surpassed similarly modified benchmark mesoporous P25 TiO₂ films, was further assisted by GQDs electron acceptor action and visible light activation to a lesser extent, leading to highly efficient photocatalytic films.

Direct versus reverse vertical two-dimensional Mo2C/graphene heterostructures for enhanced hydrogen evolution reaction electrocatalysis

Mo₂C/graphene heterostructures prepared by chemical vapor deposition have demonstrated excellent electrocatalytic activity in a hydrogen evolution reaction (HER). This is attributed to the high catalytic activity of Mo₂C while the high electrical conductivity of graphene facilitates charge transfer. In the as-grown direct vertical order, graphene is placed above the Mo₂C film. This reduces the catalytic activity of the heterostructure, since graphene in chemically inert. Here, a simple transfer method is proposed that results in the reverse order deposition of the heterostructure on the electrode. This method places graphene at the interface between Mo₂C and the electrode, enhancing charge transfer between them, which results in an overpotential of 440 mV at 10 mA cm^-2 and corresponds to ∼65 mV overpotential reduction as compared to the direct heterostructure. At the same time, when a direct Cu/Mo₂C/graphene junction with a Cu catalyst substrate is used as a working electrode, the improvement of the heterostructure HER activity is observed which is manifested in an overpotential of 275 mV at 10 mA cm^-2 with a correspondent ∼230 mV reduction. All above performances are accompanied with excellent endurance.

Advanced Photocatalysts Based on Reduced Nanographene Oxide-TiO2 Photonic Crystal Films

Surface functionalization of TiO₂ inverse opals by graphene oxide nanocolloids (nanoGO) presents a promising modification for the development of advanced photocatalysts that combine slow photon-assisted light harvesting, surface area, and mass transport of macroporous photonic structures with the enhanced adsorption capability, surface reactivity, and charge separation of GO nanosheets. In this work, post-thermal reduction of nanoGO–TiO₂ inverse opals was investigated in order to explore the role of interfacial electron transfer vs. pollutant adsorption and improve their photocatalytic activity. Photonic band gap-engineered TiO₂ inverse opals were fabricated by the coassembly technique and were functionalized by GO nanosheets and reduced under He at 200 and 500 °C. Comparative performance evaluation of the nanoGO–TiO₂ films on methylene blue photodegradation under UV-VIS and visible light showed that thermal reduction at 200 °C, in synergy with slow photon effects, improved the photocatalytic reaction rate despite the loss of nanoGO and oxygen functional groups, pointing to enhanced charge separation. This was further supported by photoluminescence spectroscopy and salicylic acid UV-VIS photodegradation, where, in the absence of photonic effects, the photocatalytic activity increased, confirming that fine-tuning of interfacial coupling between TiO₂ and reduced nanoGO is a key factor for the development of highly efficient photocatalytic films.

Mo2C/graphene heterostructures: low temperature chemical vapor deposition on liquid bimetallic Sn-Cu and hydrogen evolution reaction electrocatalytic properties

Thin 2D Mo₂C/graphene vertical heterostructures have attracted significant attention due to their potential application as electrodes in the hydrogen evolution reaction (HER) and energy storage. A common drawback in the chemical vapor deposition synthesis of these structures is the demand for high temperature growth, which should be higher than the melting temperature of the metal catalyst. The most common metallic catalyst is Cu, which has a melting temperature of 1084 °C. Here, we report the growth of thin, ∼200 nm in thickness, semitransparent micrometer-sized Mo₂C domains and Mo₂C/graphene heterostructures at lower temperatures using liquid Sn-Cu alloys. No Sn-associated defects are observed, making the alloy an appealing growth substrate. Raman spectroscopy reveals the vertical interaction between graphene and Mo₂C, as shown by the variation in the strain of the graphene film. The results demonstrate the capability to grow continuous nanometer-thin Mo₂C films at temperatures as low as 880 °C, without sacrificing the growth rate. Mo₂C films are proven to be efficient electrocatalysts for the HER. Moreover, we demonstrate the beneficial role of graphene overgrown on Mo₂C in reducing the HER overpotential values, which is attributed to more efficient charge transfer kinetics, compared to pure Mo₂C films.

Massless Dirac Fermions in ZrTe2 Semimetal Grown on InAs(111) by van der Waals Epitaxy

Single and few layers of the two-dimensional (2D) semimetal ZrTe₂ are grown by molecular beam epitaxy on InAs(111)/Si(111) substrates. Excellent rotational commensurability, van der Waals gap at the interface and moiré pattern are observed indicating good registry between the ZrTe₂ epilayer and the substrate through weak van der Waals forces. The electronic band structure imaged by angle resolved photoelectron spectroscopy shows that valence and conduction bands cross at the Fermi level exhibiting abrupt linear dispersions. The latter indicates massless Dirac Fermions which are maintained down to the 2D limit suggesting that single-layer ZrTe₂ could be considered as the electronic analogue of graphene.

Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures

van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe2/WSe2 vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates using a Bi2Se3 buffer layer. A valence band offset of 0.8 eV matches the energy gap of SnSe2 in such a way that the VB edge of WSe2 and the CB edge of SnSe2 are lined up, making this materials combination suitable for (nearly) broken gap TFETs.

Evidence for Germanene growth on epitaxial hexagonal (h)-AlN on Ag(1 1 1)

In this work, a structural analysis of Ge layers deposited by molecular beam epitaxy (MBE) on Ag(1 1 1) surfaces with and without an AlN buffer layer have been investigated by x-ray Absorption Spectroscopy (XAS) at the Ge-K edge. For the Ge layers deposited on h-AlN buffer layer on Ag(1 1 1) an interatomic Ge-Ge distance [Formula: see text] Å is found, typical of 2-Dimensional Ge layers and in agreement with the theoretical predictions for free standing low-buckled Germanene presented in literature. First principles calculations, performed in the density functional theory (DFT) framework, supported the experimental RHEED and XAS findings, providing evidence for the epitaxial 2-D Ge layer formation on h-AlN/Ag(1 1 1) template.

Epitaxial 2D MoSe2 (HfSe2) Semiconductor/2D TaSe2 Metal van der Waals Heterostructures

Molecular beam epitaxy of 2D metal TaSe2/2D MoSe2 (HfSe2) semiconductor heterostructures on epi-AlN(0001)/Si(111) substrates is reported. Electron diffraction reveals an in-plane orientation indicative of van der Waals epitaxy, whereas electronic band imaging supported by first-principles calculations and X-ray photoelectron spectroscopy indicate the presence of a dominant trigonal prismatic 2H-TaSe2 phase and a minor contribution from octahedrally coordinated TaSe2, which is present in TaSe2/AlN and TaSe2/HfSe2/AlN but notably absent in the TaSe2/MoSe2/AlN, indicating superior structural quality of TaSe2 grown on MoSe2. Apart from its structural and chemical compatibility with the selenide semiconductors, TaSe2 has a workfunction of 5.5 eV as measured by ultraviolet photoelectron spectroscopy, which matches very well with the semiconductor workfunctions, implying that epi-TaSe2 can be used for low-resistivity contacts to MoSe2 and HfSe2.

Radiological considerations and surgical planning in the treatment of giant parathyroid adenomas

Giant parathyroid adenomas constitute a rare clinical entity, particularly in the developed world. We report the case of a 53-year-old woman where the initial ultrasonography significantly underestimated the size of the lesion. The subsequent size and weight of the adenoma (7 cm diameter, 27 g) combined with the severity of the hypercalcaemia raised the suspicion for the presence of a parathyroid carcinoma. This was later disproven by the surgical and histological findings. Giant parathyroid adenomas are encountered infrequently among patients with primary hyperparathyroidism, and appear to have distinct clinical and biochemical features related to specific genomic alterations. Cross-sectional imaging is mandated in the investigation of parathyroid adenomas presenting with severe hypercalcaemia as ultrasonography alone can underestimate their size and extent. This is important since it can impact on preoperative preparation and planning as well as the consent process as a thoracic approach may prove necessary for certain cases.

Reducing the layer number of AB stacked multilayer graphene grown on nickel by annealing at low temperature

Controlling the number of layers of graphene grown by chemical vapor deposition is crucial for large scale graphene application. We propose here an etching process of graphene which can be applied immediately after growth to control the number of layers. We use nickel (Ni) foil at high temperature (T = 900 °C) to produce multilayer-AB-stacked-graphene (MLG). The etching process is based on annealing the samples in a hydrogen/argon atmosphere at a relatively low temperature (T = 450 °C) inside the growth chamber. The extent of etching is mainly controlled by the annealing process duration. Using Raman spectroscopy we demonstrate that the number of layers was reduced, changing from MLG to few-layer-AB-stacked-graphene and in some cases to randomly oriented few layer graphene near the substrate. Furthermore, our method offers the significant advantage that it does not introduce defects in the samples, maintaining their original high quality. This fact and the low temperature our method uses make it a good candidate for controlling the layer number of already grown graphene in processes with a low thermal budget.

Silicene: a review of recent experimental and theoretical investigations

Silicene is the silicon counterpart of graphene, i.e. it consists in a single layer of Si atoms with a hexagonal arrangement. We present a review of recent theoretical and experimental works on this novel two dimensional material. We discuss first the structural, electronic and vibrational properties of free-standing silicene, as predicted from first-principles calculations. We next review theoretical studies on the interaction of silicene with different substrates. The growth and experimental characterization of silicene on Ag(1 1 1) is next discussed, providing insights into the different phases or atomic arrangements of silicene observed on this metallic surface, as well as on its electronic structure. Recent experimental findings about the likely formation of hexagonal Si nanosheets on MoS2 are also highlighted.

High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy

Atomically-thin, inherently 2D semiconductors offer thickness scaling of nanoelectronic devices and excellent response to light for low-power versatile applications. Using small exfoliated flakes, advanced devices and integrated circuits have already been realized, showing great potential to impact nanoelectronics. Here, high-quality single-crystal MoSe2 is grown by molecular beam epitaxy on AlN(0001)/Si(111), showing the potential for scaling up growth to low-cost, large-area substrates for mass production. The MoSe2 layers are epitaxially aligned with the aluminum nitride (AlN) lattice, showing a uniform, smooth surface and interfaces with no reaction or intermixing, and with sufficiently high band offsets. High-quality single-layer MoSe2 is obtained, with a direct gap evidenced by angle-resolved photoemission spectroscopy and further confirmed by Raman and intense room temperature photoluminescence. The successful growth of high-quality MoSe2/Bi2Se3 multilayers on AlN shows promise for novel devices exploiting the non-trivial topological properties of Bi2Se3.

Observation of surface Dirac cone in high-quality ultrathin epitaxial Bi2Se3 topological insulator on AlN(0001) dielectric

Bi2Se3 topological insulators (TIs) are grown on AlN(0001)/Si(111) substrates by molecular beam epitaxy. In a one-step growth at optimum temperature of 300 °C, Bi2Se3 bonds strongly with AlN without forming interfacial reaction layers. This produces high epitaxial quality Bi2Se3 single crystals with a perfect registry with the substrate and abrupt interfaces, allowing thickness scaling down to three quintuple layers (QL) without jeopardizing film quality. It is found by angle-resolved photoelectron spectroscopy that, remarkably, Bi2Se3 films maintain the 3D TI properties at very low thickness of 3QL (∼2.88 nm), exhibiting top surface gapless metallic states in the form of a Dirac cone.

Structural evolution of single-layer films during deposition of silicon on silver: a first-principles study

In the quest for the construction of silicene, the silicon analogue of graphene, recent experimental studies have identified a number of distinct ultrathin Si over-layer structures on a Ag(111) surface. Here we use first-principles calculations to probe associated atomic-scale mechanisms that can give rise to this rich behavior of Si wetting layers. We find that the interaction between the Si film and the Ag substrate, neither too strong nor too weak, combined with the possibility of buckling, allows for the incorporation of a number of excess Si adatoms in continuous overlayers with a honeycomb network topology. Depending on the Si coverage, we thus obtain a hierarchy of Si mono-atomic films, in agreement with experiments.

Strain-induced changes to the electronic structure of germanium

Density functional theory calculations (DFT) are used to investigate the strain-induced changes to the electronic structure of biaxially strained (parallel to the (001), (110) and (111) planes) and uniaxially strained (along the [001], [110] and [111] directions) germanium (Ge). It is calculated that a moderate uniaxial strain parallel to the [111] direction can efficiently transform Ge to a direct bandgap material with a bandgap energy useful for technological applications.