Miniature Integrated 2.4 GHz Rectennas Using Novel Tunnel Diodes

This work presents the design, fabrication, and measured results of a fully integrated miniature rectenna using a novel tunnel diode known as the Asymmetrical Spacer Layer Tunnel (ASPAT). The term rectenna is an abbreviation for a rectifying antenna, a device with a rectifier and antenna coexisting as a single design. The ASPAT is the centrepiece of the rectifier used for its strong temperature independence, zero bias, and high dynamic range. The antenna is designed to be impedance matched with the rectifier, eliminating the need for a matching network and saving valuable real estate on the gallium arsenide (GaAs) substrate. The antenna is fully integrated with the rectifier on a single chip, thus enabling antenna miniaturisation due to the high dielectric constant of GaAs and spiral design. This miniaturisation enables the design to be fabricated economically on a GaAs substrate whilst being comparable in size to a 15-gauge needle, thus unlocking applications in medical implants. The design presented here has a total die size of 4 × 1.2 mm², with a maximum measured output voltage of 0.97 V and a 20 dBm single-tone 2.35 GHz signal transmitted 5 cm away from the rectenna.

Molecular Precursor Route to Bournonite (CuPbSbS3) Thin Films and Powders

Quaternary metal chalcogenides have attracted attention as candidates for absorber materials for inexpensive and sustainable solar energy generation. One of these materials, bournonite (orthorhombic CuPbSbS3), has attracted much interest of late for its properties commensurate with photovoltaic energy conversion. This paper outlines the synthesis of bournonite for the first time by a discrete molecular precursor strategy. The metal dithiocarbamate complexes bis(diethyldithiocarbamato)copper (II) (Cu(S2CNEt2)2, (1)), bis(diethyldithiocarbamato)lead (II) (Pb(S2CNEt2)2, (2)), and bis(diethyldithiocarbamato)antimony (III) (Sb(S2CNEt2)3, (3)) were prepared, characterized, and employed as molecular precursors for the synthesis of bournonite powders and the thin film by solvent-less pyrolysis and spray-coat-pyrolysis techniques, respectively. The polycrystalline powders and thin films were characterized by powder X-ray diffraction (p-XRD), which could be indexed to orthorhombic CuPbSbS3. The morphology of the powder at the microscale was studied using scanning electron microscopy (SEM). Energy-dispersive X-ray spectroscopy (EDX) was used to elucidate an approximately 1:1:1:3 Cu/Pb/Sb/S elemental ratio. An optical band gap energy of 1.55 eV was estimated from a Tauc plot, which is close to the theoretical value of 1.41 eV.

Direct synthesis of nanostructured silver antimony sulfide powders from metal xanthate precursors

Silver(I) ethylxanthate [AgS2COEt] (1) and antimony(III) ethylxanthate [Sb(S2COEt)3] (2) have been synthesised, characterised and used as precursors for the preparation of AgSbS2 powders and thin films using a solvent-free melt method and spin coating technique, respectively. The as-synthesized AgSbS2 powders were characterized by powder X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) spectroscopy. The crystalline AgSbS2 powder was investigated using XRD, which shows that AgSbS2 has cuboargyrite as the dominant phase, which was also confirmed by Raman spectroscopy. SEM was also used to study the morphology of the resulting material which is potentially nanostructured. EDX spectra gives a clear indication of the presence of silver (Ag), antimony (Sb) and sulfur (S) in material, suggesting that decomposition is clean and produces high quality AgSbS2 crystalline powder, which is consistent with the XRD and Raman data. Electronic properties of AgSbS2 thin films deposited by spin coating show a p-type conductivity with measured carrier mobility of 81 cm2 V-1 s-1 and carrier concentration of 1.9 × 1015 cm-3. The findings of this study reveal a new bottom-up route to these compounds, which have potential application as absorber layers in solar cells.

Dynamic modulation of the Fermi energy in suspended graphene backgated devices

Freestanding (suspended) graphene films, with high electron mobility (up to ~200,000 cm²V^-1s^-1), good mechanical and electronic properties, could resolve many of the current issues that are hampering the upscaling of graphene technology. Thus far, attempts at reliably fabricating suspended graphene devices comprising metal contacts, have often been hampered by difficulties in exceeding sizes of 1 µm in diameter, if using UV lithography. In this work, area of suspended graphene large enough to be utilized in microelectronic devices, have been obtained by suspending a CVD graphene film over cavities, with top contacts defined through UV lithography with both wet and dry etching. An area of up to 160 µm² can be fabricated as backgated devices. The suspended areas exhibit rippling of the surfaces which simultaneously introduces both tensile and compressive strain on the graphene film. Finally, the variations of the Fermi level in the suspended graphene areas can be modulated by applying a potential difference between the top contacts and the backgate. Having achieved large area suspended graphene, in a manner compatible with CMOS fabrication processes, together with enabling the modulation of the Fermi level, are substantial steps forward in demonstrating the potential of suspended graphene-based electronic devices and sensors.

Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers

In this work, we investigate the optical properties of InAs quantum dots (QDs) capped with composite In_0.15Al_0.85As/GaAs_0.85Sb_0.15 strain-reducing layers (SRLs) by means of high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) spectroscopy at 77 K. Thin In_0.15Al_0.85As layers with thickness t = 20 Å, 40 Å, and 60 Å were inserted between the QDs and a 60-Å-thick GaAs_0.85Sb_0.15 layer. The type II emissions observed for GaAs_0.85Sb_0.15-capped InAs QDs were suppressed by the insertion of the In_0.15Al_0.85As interlayer. Moreover, the emission wavelength was blueshifted for t = 20 Å and redshifted for t ≥ 40 Å resulting from the increased confinement potential and increased strain, respectively. The ground state and excited state energy separation is increased reaching 106 meV for t = 60 Å compared to 64 meV for the QDs capped with only GaAsSb SRL. In addition, the use of the In_0.15Al_0.85As layers narrows significantly the QD spectral linewidth from 52 to 35 meV for the samples with 40- and 60-Å-thick In_0.15Al_0.85As interlayers.

A molecular precursor route to quaternary chalcogenide CFTS (Cu2FeSnS4) powders as potential solar absorber materials

In the present work we report on the synthesis of a tetragonal phase of stannite Cu₂FeSnS₄ powder from Sn(ii) and Sn(iv) using a solvent free melt method using a mixture of Cu, Fe, Sn(ii)/Sn(iv) O-ethylxanthates.

Extracting random numbers from quantum tunnelling through a single diode

Random number generation is crucial in many aspects of everyday life, as online security and privacy depend ultimately on the quality of random numbers. Many current implementations are based on pseudo-random number generators, but information security requires true random numbers for sensitive applications like key generation in banking, defence or even social media. True random number generators are systems whose outputs cannot be determined, even if their internal structure and response history are known. Sources of quantum noise are thus ideal for this application due to their intrinsic uncertainty. In this work, we propose using resonant tunnelling diodes as practical true random number generators based on a quantum mechanical effect. The output of the proposed devices can be directly used as a random stream of bits or can be further distilled using randomness extraction algorithms, depending on the application.

The synthesis and characterization of Cu2ZnSnS4 thin films from melt reactions using xanthate precursors

Kesterite, Cu₂ZnSnS₄ (CZTS), is a promising absorber layer for use in photovoltaic cells. We report the use of copper, zinc and tin xanthates in melt reactions to produce Cu₂ZnSnS₄ (CZTS) thin films. The phase of the as-produced CZTS is dependent on decomposition temperature. X-ray diffraction patterns and Raman spectra show that films annealed between 375 and 475 °C are tetragonal, while at temperatures <375 °C hexagonal material was obtained. The electrical parameters of the CZTS films have also been determined. The conduction of all films was p-type, while the other parameters differ for the hexagonal and tetragonal materials: resistivity (27.1 vs 1.23 Ω cm), carrier concentration (2.65 × 10⁺¹⁵ vs 4.55 × 10⁺¹⁷ cm^-3) and mobility (87.1 vs 11.1 cm² V^-1 s^-1). The Hall coefficients were 2.36 × 10³ versus 13.7 cm³ C^-1.

A novel low temperature soft reflow process for the fabrication of deep-submicron (<0.35 μm) T-gate pseudomorphic high electron mobility transistor structures

We report a new and simple low temperature soft reflow process using solvent vapour. The combination of this soft reflow and conventional i-line lithography enables low cost, highly efficient fabrication at the deep-submicron scale. Compared to the conventional thermal reflow process, the key benefits of the new soft reflow process are its low temperature operation (<50 °C), greater shrinkage of the structure size (up to 75%) and better controllability. Gate openings reflowed from 1 μm to 250 nm have been routinely and reproducibly achieved by utilizing the saturation characteristics of the process. The feasibility of this soft reflow process is demonstrated in the fabrication of a 350 nm T-gate pseudomorphic high electron mobility transistor. By shrinking the gate length by a factor of three (from a 1 μm initial opening), the output current is improved by 60% (500 mA mm(-1) from 300 mA mm(-1)) and f(T) and f(MAX) are increased to 70 GHz (from 20 GHz) and 120 GHz (from 40 GHz) respectively. The proposed soft reflow could potentially be applied on other compatible substrates such as polymer based material for organic or thin film devices, potentially leading to many new possible applications.

All-optoelectronic terahertz system using low-temperature-grown InGaAs photomixers

We demonstrate, for the first time, an all-optoelectronic continuous-wave terahertz photomixing system that uses low-temperature grown InGaAs devices both for emitters and coherent homodyne detectors. The system is compatible with fiber-optic excitation wavelengths, and we compare the performance to the more common LT-GaAs photomixers.

Microwave detection at 110 Ghz by nanowires with broken symmetry

By using arrays of nanowires with intentionally broken symmetry, we were able to detect microwaves up to 110 GHz at room temperature. This is, to the best of our knowledge, the highest speed that has been demonstrated in different types of novel electronic nanostructures to date. Our experiments showed a rather stable detection sensitivity over a broad frequency range from 100 MHz to 110 GHz. The novel working principle enabled the nanowires to detect microwaves efficiently without a dc bias. In principle, the need for only one high-resolution lithography step and the planar architecture allow an arbitrary number of nanowires to be made by folding a linear array as many times as required over a large area, for example, a whole wafer. Our experiment on 18 parallel nanowires showed a sensitivity of approximately 75 mV dc output/mW of nominal input power of the 110 GHz signal, even though only about 0.4% of the rf power was effectively applied to the structure because of an impedance mismatch. Because this array of nanowires operates simultaneously, low detection noise was achieved, allowing us to detect -25 dBm 110 GHz microwaves at zero bias with a standard setup.