High-speed bipolar phototransistors in a 180 nm CMOS process

Several high-speed pnp phototransistors built in a standard 180 nm CMOS process are presented. The phototransistors were implemented in sizes of 40×40 μm² and 100×100 μm². Different base and emitter areas lead to different characteristics of the phototransistors. As starting material a p⁺ wafer with a p^- epitaxial layer on top was used. The phototransistors were optically characterized at wavelengths of 410, 675 and 850 nm. Bandwidths up to 92 MHz and dynamic responsivities up to 2.95 A/W were achieved. Evaluating the results, we can say that the presented phototransistors are well suited for high speed photosensitive optical applications where inherent amplification is needed. Further on, the standard silicon CMOS implementation opens the possibility for cheap integration of integrated optoelectronic circuits. Possible applications for the presented phototransistors are low cost high speed image sensors, opto-couplers, etc.

PNP PIN bipolar phototransistors for high-speed applications built in a 180 nm CMOS process

This work reports on three speed optimized pnp bipolar phototransistors build in a standard 180 nm CMOS process using a special starting wafer. The starting wafer consists of a low doped p epitaxial layer on top of the p substrate. This low doped p epitaxial layer leads to a thick space-charge region between base and collector and thus to a high -3 dB bandwidth at low collector-emitter voltages. For a further increase of the bandwidth the presented phototransistors were designed with small emitter areas resulting in a small base-emitter capacitance. The three presented phototransistors were implemented in sizes of 40 × 40 μm² and 100 × 100 μm². Optical DC and AC measurements at 410 nm, 675 nm and 850 nm were done for phototransistor characterization. Due to the speed optimized design and the layer structure of the phototransistors, bandwidths up to 76.9 MHz and dynamic responsivities up to 2.89 A/W were achieved. Furthermore simulations of the electric field strength and space-charge regions were done.