Cascade Reaction in Organic Hole Transport Layer Enables Efficient Perovskite Solar Cells

The doped organic hole transport layer (HTL) is crucial for achieving high-efficiency perovskite solar cells (PSCs). However, the traditional doping strategy undergoes a time-consuming and environment-dependent oxidation process, which hinders the technology upgrades and commercialization of PSCs. Here, we reported a new strategy by introducing a cascade reaction in traditional doped Spiro-OMeTAD, which can simultaneously achieve rapid oxidation and overcome the erosion of perovskite by 4-tert-butylpyridine (tBP) in organic HTL. The ideal dopant iodobenzene diacetate was utilized as the initiator that can react with Spiro to generate Spiro⋅+ radicals quickly and efficiently without the participation of ambient air, with the byproduct of iodobenzene (DB). Then, the DB can coordinate with tBP through a halogen bond to form a tBP-DB complex, minimizing the sustained erosion from tBP to perovskite. Based on the above cascade reaction, the resulting Spiro-based PSCs have a champion PCE of 25.76 % (certificated of 25.38 %). This new oxidation process of HTL is less environment-dependent and produces PSCs with higher reproducibility. Moreover, the PTAA-based PSCs obtain a PCE of 23.76 %, demonstrating the excellent applicability of this doping strategy on organic HTL.

Interface Defects Dependent on Perovskite Annealing Temperature for NiOX-Based Inverted CsPbI2Br Perovskite Solar Cells

Nickel oxide (NiOX) is an ideal inorganic hole transport material for the fabrication of inverted perovskite solar cells owing to its excellent optical and semiconductor properties. Currently, the main research on developing the performance of NiOX-based perovskite solar cells focuses on improving the conductivity of NiOX thin films and preventing the redox reactions between metal cations (Ni3+ on the surface of NiOX) and organic cations (FA+ or MA+ in the perovskite precursors) at the NiOX/perovskite interface. In this study, a new type of interface defects in NiOX-based CsPbI2Br solar cells is reported. That is the Pb2+ from CsPbI2Br perovskites can diffuse into the lattice of NiOX surface as the annealing temperature of perovskites changes. The diffusion of Pb2+ increases the ratio of Ni3+/Ni2+ on the surface of NiOX, leading to an increase in the density of trap state at the interface between NiOX and perovskites, which eventually results in a serious decline in the photovoltaic performance of solar cells.

Gelation of Hole Transport Layer to Improve the Stability of Perovskite Solar Cells

To achieve high power conversion efficiency (PCE) and long-term stability of perovskite solar cells (PSCs), a hole transport layer (HTL) with persistently high conductivity, good moisture/oxygen barrier ability, and adequate passivation capability is important. To achieve enough conductivity and effective hole extraction, spiro-OMeTAD, one of the most frequently used HTL in optoelectronic devices, often needs chemical doping with a lithium compound (LiTFSI). However, the lithium salt dopant induces crystallization and has a negative impact on the performance and lifetime of the device due to its hygroscopic nature. Here, we provide an easy method for creating a gel by mixing a natural small molecule additive (thioctic acid, TA) with spiro-OMeTAD. We discover that gelation effectively improves the compactness of resultant HTL and prevents moisture and oxygen infiltration. Moreover, the gelation of HTL improves not only the conductivity of spiro-OMeTAD, but also the operational robustness of the devices in the atmospheric environment. In addition, TA passivates the perovskite defects and facilitates the charge transfer from the perovskite layer to HTL. As a consequence, the optimized PSCs based on the gelated HTL exhibit an improved PCE (22.52%) with excellent device stability.

Modulation of the carrier balance of lead-halide perovskite nanocrystals by polyelectrolyte hole transport layers for near-infrared light-emitting diodes

An alternative material, methylamine (MA)-doped poly[3-(4-carboxymethyl)thiophene-2,5-diyl] (P3CT) as hole transport layer (HTL) was investigated for efficient solution-processed near-infrared perovskite light-emitting diodes (NIR PeLEDs). The best NIR PeLEDs performance was achieved with an optimized composition ratio of the MA-doped P3CT (1:1) due to the balance of the electron and hole carrier in the active layer. The charge-balanced NIR PeLEDs exhibit the highest radiance of 858.37 W sr⁻¹ m⁻², a low turn-on voltage of 1.82 V, and an external quantum efficiency of 7.44%. Our findings show that using P3CT as an alternative HTL has the potential to significantly improve PeLED performance, allowing it to play a role in the development of practical applications in high-power NIR LEDs.

In situ growth of Z-scheme CuS/CuSCN heterojunction to passivate surface defects and enhance charge transport

Copper thiocyanate (CuSCN) has been considered as a promising hole transport material (HTMs), attributing to its inherent stability, low-cost, and suitable energy levels. To make it more attractive in practical applications, the drawbacks of CuSCN in poor charge transport and serious defect recombination are bottlenecks that need to be overcome. In this work, we propose an effective strategy of in-situ decorating CuSCN with copper sulfide quantum dots (CuS QDs), a simple one-step electrochemical deposition process, to solve these issues. Compared with the pristine CuSCN, the constructed Z-Scheme heterojunction of CuS QDs/CuSCN can significantly promote charge transport and restrict recombination. In addition, the decorated CuS QDs can not only passivate defects of CuSCN, but also provide more contacting sites to facilitate hole injection when employing as HTM. As a result, the average bulk charge lifetime was improved from 0.37 ms to 0.47 ms, and the surface recombination rate constant was suppressed. We believe that the excellent performances will pave it toward practical device applications, including solar cells, photocatalysis, photoelectrochemical sensors, and light-emitting diodes.

Semiconductivity Transition in Silicon Nanowires by Hole Transport Layer

The surface of nanowires is a source of interest mainly for electrical prospects. Thus, different surface chemical treatments were carried out to develop recipes to control the surface effect. In this work, we succeed in shifting and tuning the semiconductivity of a Si nanowire-based device from n- to p-type. This was accomplished by generating a hole transport layer at the surface by using an electrochemical reaction-based nonequilibrium position to enhance the impact of the surface charge transfer. This was completed by applying different annealing pulses at low temperature (below 400 °C) to reserve the hydrogen bonds at the surface. After each annealing pulse, the surface was characterized by XPS, Kelvin probe measurements, and conductivity measured by FET based on a single Si NW. The mechanism and conclusion were supported experimentally and theoretically. To this end, this strategy has been demonstrated as an essential tool which could pave a new road for regulating semiconductivity and for other low-dimensional nanomaterials.

Enhancing the performance of polymer solar cells using solution-processed copper doped nickel oxide nanoparticles as hole transport layer

Polymer solar cells (PSCs) are considered promising energy power suppliers due to their light weight, printability, low-energy fabrication and roll-to-roll processability. Recently, the solution-processed NiO_x nanoparticles have been a desirable interfacial material for hole transport in the PSCs, instead of organic semiconductors. However, pure NiO_x films restrain the high performance of PSCs due to their poor electrical characteristics caused by the localized orbital distribution at the top of valence band. Therefore, metal ion doping has been explored as a method to endow NiO_x nanoparticles with the appropriate electrical characteristics. Herein, we applied solution-processed Cu-doped NiO_x (Cu:NiO_x) nanoparticles as an efficient hole transport layer (HTL) in PSCs. The Cu-doped NiO_x enhanced the electrical conductivity of the material and improved the interface contact with the active layer, which remarkably facilitated the hole extraction and effectively suppressed the carrier recombination at the interface. Thus, a higher power conversion efficiency of 7.05%, corresponding to an approximately 30% efficiency improvement compared with that of a pristine NiO_x interlayer (5.44%) in poly[N- 9''-hepta-decanyl-2,7-carbazolealt-5,5-(4',7'-di-2-thienyl-2',1',3'-ben-zothiadiazole)]:[6,6]-phenyl-C₇₁-butyric acid methyl ester (PCDTBT:PC₇₁BM)-based PSCs, was achieved by the proposed device. The developed solution-processed Cu:NiO_x nanoparticles may be an excellent alternative for interfacial materials in PSCs or other optoelectronic devices requiring HTLs.

Photo-induced surface modification to improve the performance of lead sulfide quantum dot solar cell

The solution-processed quantum dot (QD) solar cell technology has seen significant advancements in recent past to emerge as a potential contender for the next generation photovoltaic technology. In the development of high performance QD solar cell, the surface ligand chemistry has played the important role in controlling the doping type and doping density of QD solids. For instance, lead sulfide (PbS) QDs which is at the forefront of QD solar cell technology, can be made n-type or p-type respectively by using iodine or thiol as the surfactant. The advancements in surface ligand chemistry enable the formation of p-n homojunction of PbS QDs layers to attain high solar cell performances. It is shown here, however, that poor Fermi level alignment of thiol passivated p-type PbS QD hole transport layer with the n-type PbS QD light absorbing layer has rendered the photovoltaic devices from realizing their full potential. Here we develop a control surface oxidation technique using facile ultraviolet ozone treatment to increase the p-doping density in a controlled fashion for the thiol passivated PbS QD layer. This subtle surface modification tunes the Fermi energy level of the hole transport layer to deeper values to facilitate the carrier extraction and voltage generation in photovoltaic devices. In photovoltaic devices, the ultraviolet ozone treatment resulted in the average gain of 18% in the power conversion efficiency with the highest recorded efficiency of 8.98%.

Hole transport layer based on conjugated polyelectrolytes for polymer solar cells

We demonstrate the conjugated polyelectrolytes (CPEs) as efficient hole transport layer (HTL) of polymer solar cells. Replacing poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) with a CPEs with narrow bandgap results in both improvements in device efficiency and stability. In spite of their narrow bandgap, thin CPE films (thickness of ∼30 nm) enable sufficient light absorption within the active layer. Enhancement of device efficiency is attributed to low surface roughness, high transmittance in visible region, and reduced charge transfer resistance. Compared to the device with PEDOT:PSS, pH neutral nature of CPEs may enhance device stability under ambient condition.

Shelf life stability comparison in air for solution processed pristine PDPP3T polymer and doped spiro-OMeTAD as hole transport layer for perovskite solar cell

This data in brief includes forward and reverse scanned current density-voltage (J-V) characteristics of perovskite solar cells with PDPP3T and spiro-OMeTAD as HTL, stability testing conditions of perovskite solar cell shelf life in air for both PDPP3T and spiro-OMeTAD as HTL as per the description in Ref. [1], and individual J-V performance parameters acquired with increasing time exposed in ambient air are shown for both type of devices using PDPP3T and spiro-OMeTAD as HTL. The data collected in this study compares the device stability with time for both PDPP3T and spiro-OMeTAD based perovskite solar cells and is directly related to our research article "solution processed pristine PDPP3T polymer as hole transport layer for efficient perovskite solar cells with slower degradation" [2].