Base-stabilized Gallium Sulfides and Selenides Supported by a Bis(oxazolinyl)(phenyl)methanide Ligand: Trapping Singly Base-Stabilized Gallium Chalcogenide

Gallylene supported by a bis(oxazolinyl)(phenyl)methanide (Boxm) ligand was synthesized and structurally characterized. The reaction of this gallylene with triphenylphosphine sulfide/selenide yielded dimeric gallium sulfide and selenide. These compounds could be converted to monomeric terminal sulfide and selenide by coordination of an external Lewis base such as an N-heterocyclic carbene (NHC or IMe4) and 4-dimethylaminopyridiene (DMAP). These doubly-base-stabilized gallium sulfide/selenide reacted with phenyl isocyanate to give the corresponding cycloadducts by releasing the Lewis base, indicating the formation of a single-base-stabilized gallium sulfide/selenide intermediate.

A Hybrid Pulsed Laser Deposition Approach to Grow Thin Films of Chalcogenides

Vapor-pressure mismatched materials such as transition metal chalcogenides have emerged as electronic, photonic, and quantum materials with scientific and technological importance. However, epitaxial growth of vapor-pressure mismatched materials are challenging due to differences in the reactivity, sticking coefficient, and surface adatom mobility of the mismatched species constituting the material, especially sulfur containing compounds. Here, a novel approach is reported to grow chalcogenides-hybrid pulsed laser deposition-wherein an organosulfur precursor is used as a sulfur source in conjunction with pulsed laser deposition to regulate the stoichiometry of the deposited films. Epitaxial or textured thin films of sulfides with variety of structure and chemistry such as alkaline metal chalcogenides, main group chalcogenides, transition metal chalcogenides, and chalcogenide perovskites are demonstrated, and structural characterization reveal improvement in thin film crystallinity, and surface and interface roughness compared to the state-of-the-art. The growth method can be broadened to other vapor-pressure mismatched chalcogenides such as selenides and tellurides. This work opens up opportunities for broader epitaxial growth of chalcogenides, especially sulfide-based thin film technological applications.

Excellent Nonlinear Optical M[M4 Cl][Ga11 S20 ] (M = A/Ba, A = K, Rb) Achieved by Unusual Cationic Substitution Strategy

The typical chalcopyrite AgGaQ2 (Q = S, Se) are commercial infrared (IR) second-order nonlinear optical (NLO) materials; however, they suffer from unexpected laser-induced damage thresholds (LIDTs) primairy due to their narrow band gaps. Herein, what sets this apart from previously reported chemical substitutions is the utilization of an unusual cationic substitution strategy, represented by [[SZn4 ]S12 + [S4 Zn13 ]S24 + 11ZnS4 ⇒ MS12 + [M4 Cl]S24 + 11GaS4 ], in which the covalent Sx Zny units in the diamond-like sphalerite ZnS are synergistically replaced by cationic Mx Cly units, resulting in two novel salt-inclusion sulfides, M[M4 Cl][Ga11 S20 ] (M = A/Ba, A = K, 1; Rb, 2). As expected, the introduction of mixed cations in the GaS4 anionic frameworks of 1 and 2 leads to wide band gaps (3.04 and 3.01 eV), which exceeds the value of AgGaS2 , facilitating the improvement of high LIDTs (9.4 and 10.3 × AgGaS2 @1.06 µm, respectively). Furthermore, compounds 1 and 2 exhibit moderate second-harmonic generation intensities (0.84 and 0.78 × AgGaS2 @2.9 µm, respectively), mainly originating from the orderly packing tetrahedral GaS4 units. Importantly, this study demonstrates the successful application of the cationic substitution strategy based on diamond-like structures to provide a feasible chemical design insight for constructing high-performance NLO materials.

Synthesis and crystal structure of Ba2Y0.87(1)Mn1.71(1)Te5

We report the structural characterization of a new quaternary telluride, Ba2Y0.87(1)Mn1.71(1)Te5, which was synthesized by the direct reaction of the elements inside a vacuum-sealed fused-silica tube. The quaternary phase is the first member of the Ba-M-Mn-Te system (M = Sc and Y). The composition and structure of the phase were elucidated using SEM-EDX (scanning electron microscopy-energy dispersive X-ray spectrometry) and single-crystal X-ray diffraction (SCXRD) studies. The title phase is nonstoichiometric and crystallizes in the monoclinic system (space group C2/m) having the refined unit-cell parameters a = 15.1466 (8), b = 4.5782 (3), c = 10.6060 (7) Å and β = 116.956 (2)°, with two formula units (Z = 2). The pseudo-two-dimensional crystal structure of Ba2Y0.87(1)Mn1.71(1)Te5 consists of distorted YTe6 octahedra and MnTe4 tetrahedra as the building blocks of the structure. The YTe6 octahedra are arranged to form infinite one-dimensional chains by sharing edges along the [010] direction. These chains are further connected to the MnTe4 tetrahedra along the c axis to create layered two-dimensional polyanionic [Y0.87(1)Mn1.71(1)Te5]4- units. The stuffing of Ba2+ cations in between the layers of [Y0.87(1)Mn1.71(1)Te5]4- anions brings the charge neutrality of the structure. Each Ba atom in the structure sits at the centre of a distorted monocapped trigonal prism-like polyhedron of seven Te atoms.

Three-in-One Strategy Constructing the First High-Performance Nonlinear Optical Sulfide Crystallizing with the P43 Space Group

The balance between large nonlinear optical (NLO) effect and wide bandgap is the key scientific issue for the exploration of infrared NLO materials. Targeting this issue, two new pentanary chalcogenides KGaGe1.37 Sn0.63 S6 (1) and KGaGe1.37 Sn0.63 Se6 (2) are obtained by the three-in-one strategy, viz. three types of fourfold-coordinated metal elements co-occupying the same site. They crystallize in the tetragonal P43 (1) and monoclinic Cc (2) space group. Their structures can be evolved from benchmark AgGaS2 (AGS) by suitable substitution. Remarkably, 1 is the first NLO sulfide crystallizing with the P43 space group, representing a new structure-type NLO material. The structural relationship between 1 and 2 and the evolution from 1, 2 to AGS are also analyzed. Both 1 and 2 show balanced NLO properties. Specifically, 1 exhibits phase-matchable SHG response of 0.6 × AGS, a wide bandgap of 3.50 eV, and a high laser damage threshold of 6.24 × AGS. Theoretical calculation results suggest that the Ga/Ge/Sn element ratios of the co-occupied sites of 1 and 2 are the most appropriate for stabilizing the structures. The strategy adopted here will provide some inspiration for exploring new high-performance NLO materials.

Nonlinear Optical Sulfides LiMGa8 S14 (M = Rb/Ba, Cs/Ba) Created by Li+ Driven 2D Centrosymmetric to 3D Noncentrosymmetric Transformation

Cations that can regulate the configuration of anion group are greatly important but regularly unheeded. Herein, the structural transformation from 2D CS to 3D noncentrosymmetric (NCS, which is the prerequisite for second-order NLO effect) is rationally designed to newly afford two sulfides LiMGa8 S14 (M = Rb/Ba, 1; Cs/Ba, 2) by introducing the smallest alkali metal Li+ cation into the interlamination of 2D centrosymmetric (CS) RbGaS2 . The unusual frameworks of 1 and 2 are constructed from C2 -type [Ga4 S11 ] supertetrahedrons in a highly parallel arrangement. 1 and 2 display distinguished NLO performances, including strong phase-matchable second-harmonic generation (SHG) intensities (0.8 and 0.9 × AgGaS2 at 1910 nm), wide optical band gaps (3.24 and 3.32 eV), and low coefficient of thermal expansion for favorable laser-induced damage thresholds (LIDTs, 4.7, and 7.6 × AgGaS2 at 1064 nm), which fulfill the criteria of superior NLO candidates (SHG intensity >0.5 × AGS and band gap >3.0 eV). Remarkably, 1 and 2 melt congruently at 873.8 and 870.5 °C, respectively, which endows them with the potential of growing bulk crystals by the Bridgeman-Stockbarge method. This investigated system provides a new avenue for the structural evolution from layered CS to 3D NCS of NLO materials.

Accurate X-ray diffraction data required for proper evaluation of bond valence sums and global instability indexes: redetermination of the crystal structures of diamond-like Cu2CdSiS4 and Cu2HgSnS4 as a case study

Our calculations of the global instability index (G) values for some diamond-like materials with the general formula I2-II-IV-VI4 have indicated that the structures may be unstable or incorrectly determined. To compute the G value of a given compound, the bond valence sums (BVSs) must first be calculated using a crystal structure. Two examples of compounds with high G values, based on data from the literature, are the wurtz-stannite-type dicopper cadmium silicon tetrasulfide (Cu2CdSiS4) and the stannite-type dicopper mercury tin tetrasulfide (Cu2HgSnS4), which were first reported in 1967 and 1965, respectively. In the present study, Cu2CdSiS4 and Cu2HgSnS4 were prepared by solid-state synthesis at 1000 and 900 °C, respectively. The phase purity was assessed by powder X-ray diffraction. Optical diffuse reflectance UV/Vis/NIR spectroscopy was used to estimate the optical bandgaps of 2.52 and 0.83 eV for Cu2CdSiS4 and Cu2HgSnS4, respectively. The structures were solved and refined using single-crystal X-ray diffraction data. The structure type of Cu2CdSiS4 was confirmed, where Cd2+, Si4+ and two of the three crystallographically unique S2- ions lie on a mirror plane. The structure type of Cu2HgSnS4 was also verified, where all ions lie on special positions. The S2- ion resides on a mirror plane, the Cu+ ion is situated on a fourfold rotary inversion axis and both the Hg2+ and the Sn4+ ions are located on the intersection of a fourfold rotary inversion axis, a mirror plane and a twofold rotation axis. Using the crystal structures solved and refined here, the G values were reassessed and found to be in the range that indicates reasonable strain for a stable crystal structure. This work, together with some examples gathered from the literature, shows that accurate data collected on modern instrumentation should be used to reliably calculate BVSs and G values.

Boosting Thermoelectric Performance in Epitaxial GeTe Film/Si by Domain Engineering and Point Defect Control

This study demonstrates a simultaneous realization of ultralow thermal conductivity and high thermoelectric power factor in epitaxial GeTe thin films/Si substrates by a combination of the interface introduction by domain engineering and the suppression of Ge vacancy generation by point defect control. We formed epitaxial Te-poor GeTe thin films having low-angle grain boundaries with a misorientation angle close to 0° or twin interfaces with a misorientation angle close to 180°. The control of interfaces and point defects gave rise to ultralow lattice thermal conductivity of ∼0.7 ± 0.2 W m^-1 K^-1. This value was the same in the order of magnitude as the theoretical minimum lattice thermal conductivity of ∼0.5 W m^-1 K^-1 calculated by the Cahill-Pohl model. At the same time, the GeTe thin films exhibited a high thermoelectric power factor because of the suppression of Ge vacancy generation and a small contribution of grain boundary carrier scattering. The outstanding combined technique of domain engineering and point defect control can be a great approach for developing high-performance thermoelectric films.

Ab initio calculation of mechanical, electronic and optical characteristics of chalcogenide perovskite BaZrS3 at high pressures

A theoretical examination of the structural, elastic, electronic and optical properties of the chalcogenide perovskite BaZrS₃ under pressures of 0 and 20 GPa was performed using density functional theory ab initio calculations. The lattice constants of the BaZrS₃ structure are well reproduced from our first-principles calculations and are in excellent agreement with experimental measurements. Moreover, the values of mechanical parameters, such as the elastic constant, increased under applied pressure. The electronic parameters indicate that the chalcogenide perovskite BaZrS₃ has a direct band gap of 1.75 eV. To understand the optical response, the real and imaginary parts of the dielectric function of BaZrS₃ have been studied, as well as the absorption coefficient, reflectivity and extinction coefficient. The induced pressure is found to enhance the optical parameters in the different energy regions. Our calculations predict that the studied chalcogenide perovskite BaZrS₃ could be a candidate in photovoltaic, optoelectronic and mechanical applications.

Y2Te3: A New n-Type Thermoelectric Material

Rare-earth chalcogenides Re_3-xCh₄ (Re = La, Pr, Nd, Ch = S, Se, and Te) have been extensively studied as high-temperature thermoelectric (TE) materials owing to their low lattice thermal conductivity (κ_L) and tunable electron carrier concentration via cation vacancies. In this work, we introduce Y₂Te₃, a rare-earth chalcogenide with a rocksalt-like vacancy-ordered structure, as a promising n-type TE material. We computationally evaluate the transport properties, optimized TE performance, and doping characteristics of Y₂Te₃. Combined with a low κ_L, multiple low-lying conduction band valleys yield a high n-type TE quality factor. We find that a maximum figure of merit zT > 1 can be achieved when Y₂Te₃ is optimally doped to an electron concentration of 1-2 × 10²⁰ cm^-3. We use defect calculations to show that Y₂Te₃ is n-type dopable under Y-rich growth conditions, which suppress the formation of acceptor-like cation vacancies. Furthermore, we propose that optimal n-type doping can be achieved with halogens (Cl, Br, and I), with I being the most effective dopant. Our computational results as well as experimental results reported elsewhere motivate further optimization of Y₂Te₃ as an n-type TE material.

Probing the charge transfer mechanisms in type-II Cs2AgBiBr6-CdSe composite system: ultrafast insights

Lead-free halide-based double perovskites (DPs) have established themselves as the emerging nontoxic alternatives for photovoltaic (PV) applications thus substituting the long-standing lead halide perovskites. Among the prospective lead-free DPs, Cs₂AgBiBr₆has gained immense popularity owing to the fascinating properties demonstrated by them including low carrier effective mass and microsecond lifetime for electron-hole recombination. Nevertheless, the large, indirect bandgap remains the prime hurdle that restrains commercialization of the Cs₂AgBiBr₆DPs based PV devices. A rational solution could be designing its heterostructure with another suitable material that could mitigate the inadequacies of Cs₂AgBiBr₆DPs. With this line of thought, herein we synthesized a composite of Cs₂AgBiBr₆DPs with CdSe NCs and then performed transient absorption (TA) spectroscopic measurements to introspect its photophysical aspects. Executing excitation energy-dependent studies clearly reveal the carrier transfer efficiency to be strongly pump-dependent. Upon exciting with 350 nm pump, in compliance with the energy band alignment and tendency of both the constituents to be photoexcited across their bandgap, there is a bidirectional transfer of hot electrons anticipated in the composite system. Nevertheless, the TA outcomes indicate the transfer of hot electrons from CdSe to Cs₂AgBiBr₆to be more favorable out of the bidirectional pathways. Employing further lower pump energies (480 nm) when only CdSe NCs are capable of being excited, the transfer efficiency of the electrons from CdSe to Cs₂AgBiBr₆is noticed to be fairly low. Besides this, when the pump wavelength is tuned to 530 nm i.e. quite close to the CdSe band edge, no electron transfer is noticeable despite the anticipation from thermodynamic feasibility. Thus, as reflected by the TA kinetics, electron transfer is discerned to be more efficient from the hot states rather than the band edges. Most advantageously, charge separation is successfully achieved in this never explored composite architecture which eases the carrier extraction and minimizes the otherwise prevalent fast recombination processes.

Alkaline-Earth Chalcogenide Nanocrystals: Solution-Phase Synthesis, Surface Chemistry, and Stability

Increasing demand for effective energy conversion materials and devices has renewed interest in semiconductors comprised of earth-abundant and biocompatible elements. Alkaline-earth sulfides doped with rare earth ions are versatile optical materials. However, relatively little is known about controlling the dimensionality, surface chemistry, and inherent optical properties of the undoped versions of alkaline-earth mono- and polychalcogenides. We describe the colloidal synthesis of alkaline-earth chalcogenide nanocrystals through the reaction of metal carboxylates with carbon disulfide or selenourea. Systematic exploration of the synthetic phase space allows us to tune particle sizes over a wide range using a mixture of commercially available carboxylate precursors. Solid-state NMR spectroscopy confirms the phase purity of the selenide compositions. Surface characterization reveals that bridging carboxylates and amines preferentially terminate the surface of the nanocrystals. While these materials are colloidally stable in the mother solution, the selenides are susceptible to oxidation over time, eventually degrading to selenium metal through polyselenide intermediates. As part of these investigations, we have developed the colloidal syntheses of barium di- and triselenides, two among few reported nanocrystalline alkaline-earth polychalcogenides. Electronic structure calculations reveal that both materials are indirect band gap semiconductors. The colloidal chemistry presented here may enable the synthesis of more complex, multinary chalcogenide materials containing alkaline-earth elements.

In Situ Chalcogen Leaching Manipulates Reactant Interface toward Efficient Amine Electrooxidation

Engineering the reaction interface is necessary for advancing various electrocatalytic processes. However, most designed catalysts tend to be ineffective due to the inevitable structural reconstruction. Here we utilize that operando electrocatalysis variations (i.e., chalcogen leaching) manipulate the reactant interface toward amine electrooxidation. Taking chalcogen-doped Ni(OH)₂ as an example, operando techniques uncover that chalcogens leach from the matrix and then adsorb on the surface of NiOOH as chalcogenates during the electrooxidation process. The charged chalcogenates will induce the local electric field that pushes the polar amines through the inner Helmholtz plane to enrich on the catalyst surface. Meanwhile, the polarization effect of chalcogenates and amines boost amino C-N bond activation for dehydrogenation into nitrile C≡N bonds. Under the promotion effect of surface-adsorbed chalcogenate ions, our catalysts display over 99.5% propionitrile selectivity at the low potential of 1.317 V with an ultrahigh current density. This finding highlights the use of operando changes of catalysts to rationally design efficient catalysts and further clarifies the underlying role of chalcogen atoms in the electrooxidation process.

The Combination of Structure Prediction and Experiment for the Exploration of Alkali-Earth Metal-Contained Chalcopyrite-Like IR Nonlinear Optical Material

Design and fabrication of new infrared (IR) nonlinear optical (NLO) materials with balanced properties are urgently needed since commercial chalcopyrite-like (CL) NLO crystals are suffering from their intrinsic drawbacks. Herein, the first defect-CL (DCL) alkali-earth metal (AEM) selenide IR NLO material, DCL-MgGa2 Se4 , has been rationally designed and fabricated by a structure prediction and experiment combined strategy. The introduction of AEM tetrahedral unit MgSe4 effectively widens the band gap of DCL compounds. The title compound exhibits a wide band gap of 2.96 eV, resulting in a high laser induced damage threshold (LIDT) of ≈3.0 × AgGaS2 (AGS). Furthermore, the compound shows a suitable second harmonic generation (SHG) response (≈0.9 × AGS) with a type-I phase-matching (PM) behavior and a wide IR transparent range. The results indicate that DCL-MgGa2 Se4 is a promising mid-to-far IR NLO material and give some insights into the design of new CL compound with outstanding IR NLO properties based on the AEM tetrahedra and the structure predication and experiment combined strategy.

Effects of Preparation Procedures and Porosity on Thermoelectric Bulk Samples of Cu2SnS3 (CTS)

The thermoelectric behavior and stability of Cu₂SnS₃ (CTS) has been investigated in relation to different preparations and sintering conditions, leading to different microstructures and porosities. The studied system is CTS in its cubic polymorph, produced in powder form via a bottom-up approach based on high-energy reactive milling. The as-milled powder was sintered in two batches with different synthesis conditions to produce bulk CTS samples: manual cold pressing followed by traditional sintering (TS), or open die pressing (ODP). Despite the significant differences in densities, ~75% and ~90% of the theoretical density for TS and ODP, respectively, we observed no significant difference in electrical transport. The stable, best performing TS samples reached zT ~0.45, above 700 K, whereas zT reached ~0.34 for the best performing ODP in the same conditions. The higher zT of the TS sintered sample is due to the ultra-low thermal conductivity (κ ~0.3–0.2 W/mK), three-fold lower than ODP in the entire measured temperature range. The effect of porosity and production conditions on the transport properties is highlighted, which could pave the way to produce high-performing TE materials.

Isolation of Cyclic Aluminium Polysulfides by Stepwise Sulfurization

Despite the notable progress in aluminium chalcogenides, their sulfur congeners have rarely been isolated under mild conditions owing to limited synthetic precursors and methods. Herein, facile isolation of diverse molecular aluminium sulfides is achievable, by the reaction of N‐heterocyclic carbene‐stabilized terphenyl dihydridoaluminium (1) with various thiation reagents. Different to the known dihydridoaluminium 1^Tipp, 1 features balanced stability and reactivity at the Al center. It is this balance that enables the first monomeric aluminium hydride hydrogensulfide 2, the six‐membered cyclic aluminium polysulfide 4 and the five‐membered cyclic aluminium polysulfide 6 to be isolated, by reaction with various equivalents of elemental sulfur. Moreover, a rare aluminium heterocyclic sulfide with Al−S−P five‐membered ring (7) was obtained in a controlled manner. All new compounds were fully characterized by multinuclear NMR spectroscopy and elemental analysis. Their structures were confirmed by single‐crystal X‐ray diffraction studies.

A New Synthetic Methodology in the Preparation of Bimetallic Chalcogenide Clusters via Cluster-to-Cluster Transformations

A decanuclear silver chalcogenide cluster, [Ag₁₀(Se){Se₂P(OⁱPr)₂}₈] (2) was isolated from a hydride-encapsulated silver diisopropyl diselenophosphates, [Ag₇(H){Se₂P(OⁱPr)₂}₆], under thermal condition. The time-dependent NMR spectroscopy showed that 2 was generated at the first three hours and the hydrido silver cluster was completely consumed after thirty-six hours. This method illustrated as cluster-to-cluster transformations can be applied to prepare selenide-centered decanuclear bimetallic clusters, [Cu_xAg_10-x(Se){Se₂P(OⁱPr)₂}₈] (x = 0-7, 3), via heating [Cu_xAg_7-x(H){Se₂P(OⁱPr)₂}₆] (x = 1-6) at 60 °C. Compositions of 3 were accurately confirmed by the ESI mass spectrometry. While the crystal 2 revealed two un-identical [Ag₁₀(Se){Se₂P(OⁱPr)₂}₈] structures in the asymmetric unit, a co-crystal of [Cu₃Ag₇(Se){Se₂P(OⁱPr)₂}₈]_0.6[Cu₄Ag₆(Se){Se₂P(OⁱPr)₂}₈]_0.4 ([3a]_0.6[3b]_0.4) was eventually characterized by single-crystal X-ray diffraction. Even though compositions of 2, [3a]_0.6[3b]_0.4 and the previous published [Ag₁₀(Se){Se₂P(OEt)₂}₈] (1) are quite similar (10 metals, 1 Se^2-, 8 ligands), their metal core arrangements are completely different. These results show that different synthetic methods by using different starting reagents can affect the structure of the resulting products, leading to polymorphism.

Highly Distorted [HgS4] Motif-Driven Structural Symmetry Degradation and Strengthened Second-Harmonic Generation Response in the Defect Diamond-Like Chalcogenide Hg3P2S8

Chalcogenides with diamond-like (DL) structures are a treasury of infrared nonlinear optical (NLO) materials. Here, a ternary Hg-based chalcogenide with a defect DL structure, Hg₃P₂S₈, is synthesized by solid-state reaction. Driven by the highly distorted [HgS₄] tetrahedra, this compound displays an interesting structural symmetry degradation from tetragonal to orthorhombic compared with its analogue Zn₃P₂S₈. Meanwhile, the overall performances of Hg₃P₂S₈ are quite remarkable, including a very strong phase-matchable second-harmonic generation (SHG) response (4.2 × AgGaS₂), large band gap (2.77 eV), wide IR transparent range (0.45-16.7 μm), and high laser-induced damage threshold (4 × AGS). Furthermore, the theoretical analysis and local dipole moment calculations elucidate that the highly distorted [HgS₄] tetrahedra contribute a lot to the enhancement of the SHG effect. This discovery will motivate the exploration of other DL Hg-based chalcogenides serving as high-performing mid-IR NLO materials.

Integration of the Rhombohedral BiSb(0001) Topological Insulator on a Cubic GaAs(001) Substrate

Bismuth-antimony alloy (Bi_1 - xSb_x) is the first reported 3D topological insulator (TI). Among many TIs reported to date, it remains the most promising for spintronic applications thanks to its large conductivity, its colossal spin Hall angle, and the possibility to build low-current spin-orbit-torque magnetoresistive random access memories. Nevertheless, the 2D integration of TIs on industrial standards is lacking. In this work, we report the integration of high-quality rhombohedral BiSb(0001) topological insulators on a cubic GaAs(001) substrate. We demonstrate a clear epitaxial relationship at the interface, a fully relaxed TI layer, and the growth of a rhombohedral matrix on top of the cubic substrate. The antimony composition of the Bi_1 - xSb_x layer is perfectly controlled and covers almost the whole TI window. For optimized growth conditions, the sample generates a semiconductor band structure at room temperature in the bulk and exhibits metallic surface states at 77 K.

Advances in Photonic Devices Based on Optical Phase-Change Materials

Phase-change materials (PCMs) are important photonic materials that have the advantages of a rapid and reversible phase change, a great difference in the optical properties between the crystalline and amorphous states, scalability, and nonvolatility. With the constant development in the PCM platform and integration of multiple material platforms, more and more reconfigurable photonic devices and their dynamic regulation have been theoretically proposed and experimentally demonstrated, showing the great potential of PCMs in integrated photonic chips. Here, we review the recent developments in PCMs and discuss their potential for photonic devices. A universal overview of the mechanism of the phase transition and models of PCMs is presented. PCMs have injected new life into on-chip photonic integrated circuits, which generally contain an optical switch, an optical logical gate, and an optical modulator. Photonic neural networks based on PCMs are another interesting application of PCMs. Finally, the future development prospects and problems that need to be solved are discussed. PCMs are likely to have wide applications in future intelligent photonic systems.

Synthesis, crystal structure, and electronic structure of Li2PbSiS4: a quaternary thiosilicate with a compressed chalcopyrite-like structure

The new quaternary thiosilicate, Li₂PbSiS₄ (dilithium lead silicon tetrasulfide), was prepared in an evacuated fused-silica tube via high-temperature, solid-state synthesis at 800 °C, followed by slow cooling. The crystal structure was solved and refined using single-crystal X-ray diffraction data. By strict definition, the title compound crystallizes in the stannite structure type; however, this type of structure can also be described as a compressed chalcopyrite-like structure. The Li⁺ cation lies on a crystallographic fourfold rotoinversion axis, while the Pb²⁺ and Si⁴⁺ cations reside at the intersection of the fourfold rotoinversion axis with a twofold axis and a mirror plane. The Li⁺ and Si⁴⁺ cations in this structure are tetrahedrally coordinated, while the larger Pb²⁺ cation adopts a distorted eight-coordinate dodecahedral coordination. These units join together via corner- and edge-sharing to create a dense, three-dimensional structure. Powder X-ray diffraction indicates that the title compound is the major phase of the reaction product. Electronic structure calculations, performed using the full potential linearized augmented plane wave method within density functional theory (DFT), indicate that Li₂PbSiS₄ is a semiconductor with an indirect bandgap of 2.22 eV, which compares well with the measured optical bandgap of 2.51 eV. The noncentrosymmetric crystal structure and relatively wide bandgap designate this compound to be of interest for IR nonlinear optics.

Stress-Induced In Situ Modification of Transition Temperature in VO2 Films Capped by Chalcogenide

We attempted to modify the monoclinic–rutile structural phase transition temperature (T_tr) of a VO₂ thin film in situ through stress caused by amorphous–crystalline phase change of a chalcogenide layer on it. VO₂ films on C- or R-plane Al₂O₃ substrates were capped by Ge₂Sb₂Te₅ (GST) films by means of rf magnetron sputtering. T_tr of the VO₂ layer was evaluated through temperature-controlled measurements of optical reflection intensity and electrical resistance. Crystallization of the GST capping layer was accompanied by a significant drop in T_tr of the VO₂ layer underneath, either with or without a SiN_x diffusion barrier layer between the two. The shift of T_tr was by ~30 °C for a GST/VO₂ bilayered sample with thicknesses of 200/30 nm, and was by ~6 °C for a GST/SiN_x/VO₂ trilayered sample of 200/10/6 nm. The lowering of T_tr was most probably caused by the volume reduction in GST during the amorphous–crystalline phase change. The stress-induced in in situ modification of T_tr in VO₂ films could pave the way for the application of nonvolatile changes of optical properties in optoelectronic devices.

Lithium-Doping Effects in Cu(In,Ga)Se2 Thin-Film and Photovoltaic Properties

The beneficial effects of heavy alkali metals such as K, Rb, and Cs in enhancing Cu(In,Ga)Se₂ (CIGS) photovoltaic efficiencies are widely known, though the detailed mechanism is still open for discussion. In the present work, the effects of the lightest alkali metal, Li, on CIGS thin-film and device properties are focused upon and compared to the effects of heavy alkali metals. Till date, the beneficial effects of elemental Li on Cu₂ZnSnS₄ photovoltaic devices in enhancing efficiencies have been reported. On the other hand, it is shown in the present work that the beneficial effects of Li on CIGS are not so significant. In contrast to the effects of Na or Rb in enhancing CIGS(112) growth orientation, Li was revealed not to affect CIGS growth orientation. The most distinctive feature observed between Li and other alkali metals was the elemental depth profile in CIGS films. Namely, Na and heavier alkali metals show a concentration peak near the surface (relatively Cu-poor) region of CIGS films, whereas elemental Li showed no such trend, suggesting that Li has no significant effect on CIGS surface modification. Nonetheless, Li was found to have some effect in enhancing the PL peak intensity and photovoltaic performance of CIGS, though the effect is relatively small in comparison to that obtained with other alkali metals.

Chimeric supramolecular synthons in Ph2Te2(I2)Se

Iodination of Ph₂Te₂Se by molecular iodine is directed towards the Te atom and yields {diiodo[(phenyltellanyl)selanyl]-λ⁴-tellanyl}benzene, PhTeSeTeI₂Ph or C₁₂H₁₀I₂SeTe₂. The molecule can be considered as a chimera of PhTeSeR, PhTeSeTePh and R'TeI₂Ph fragments. The crystal structure features a complex interplay of the supramolecular synthons Te...π(Ph), Se...Te and I...Te, combining molecules into a three-dimensional framework. Their combination affords long-range supramolecular synthons which are fused in a way resembling the mythological chimera and could be defined as chimeric supramolecular synthons. The energies of the intermolecular interactions have also been calculated and analyzed.

Improved Thermoelectric Performance through Double Substitution in Shandite-Type Mixed-Metal Sulfides

Substitution of tin by indium in shandite-type phases, A₃Sn₂S₂ with mixed Co/Fe occupancy of the A-sites is used to tune the Fermi level within a region of the density of states in which there are sharp, narrow bands of predominantly metal d-character. Materials of general formula Co_2.5+x Fe_0.5-x Sn_2--yIn _y S₂ (x = 0, 0.167; 0.0 ≤ y ≤ 0.7) have been prepared by solid-state reaction and the products characterized by powder X-ray diffraction. Electrical-transport property data reveal that the progressive depopulation of the upper conduction band as tin is replaced by indium increases the electrical resistivity, and the weakly temperature-dependent ρ(T) becomes more semiconducting in character. Concomitant changes in the negative Seebeck coefficient, the temperature dependence of which becomes increasingly linear, suggests the more highly substituted materials are n-type degenerate semiconductors. The power factors of the substituted phases, while increased, exhibit a weak temperature dependence. The observed reductions in thermal conductivity are principally due to reductions in the charge-carrier contribution on hole doping. A maximum figure-of-merit of (ZT)_max = 0.29 is obtained for the composition Co_2.667Fe_0.333Sn_1.6In_0.4S₂ at 573 K: among the highest values for an n-type sulfide at this temperature.

Comparison of the Electrical Response of Cu and Ag Ion-Conducting SDC Memristors Over the Temperature Range 6 K to 300 K

Electrical performance of self-directed channel (SDC) ion-conducting memristors which use Ag and Cu as the mobile ion source are compared over the temperature range of 6 K to 300 K. The Cu-based SDC memristors operate at temperatures as low as 6 K, whereas Ag-based SDC memristors are damaged if operated below 125 K. It is also observed that Cu reversibly diffuses into the active Ge2Se3 layer during normal device shelf-life, thus changing the state of a Cu-based memristor over time. This was not observed for the Ag-based SDC devices. The response of each device type to sinusoidal excitation is provided and shows that the Cu-based devices exhibit hysteresis lobe collapse at lower frequencies than the Ag-based devices. In addition, the pulsed response of the device types is presented.

Transparent and Hybrid Multilayer Films with Improved Thermoelectric Performance by Chalcogenide-Interlayer-Induced Transport Enhancement

Transparent thermoelectric thin films for efficient heat energy conversion can be extensively applied in healthcare and small electronics. We report a strategy for the fabrication of organic/inorganic hybrid multilayer films with improved thermoelectric performances. As an organic layer, a highly conductive poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is deposited after a solvent treatment. An inorganic interlayer consisting of PEDOT-coated SnSeTe nanosheets (PEDOT-SnSeTe nanosheets) is introduced between the PEDOT:PSS layers to fabricate an alternately deposited PEDOT:PSS/PEDOT-SnSeTe nanosheets/PEDOT:PSS (PSP) multilayer film. To demonstrate the interlayer-induced thermoelectric behaviors, the thermoelectric properties and corresponding carrier transport properties of single-layer, bilayer, and multilayer films are investigated. The inorganic layer influences the intrinsic conduction toward a favorable value for an improved thermoelectric transport. A considerably increased thermoelectric power factor of 110 μW·m^-1·K^-2 is achieved for a PSP multilayer film fabricated at 4000 rpm, greatly higher than that of the PEDOT:PSS and solution-mixed SnSeTe/PEDOT:PSS composite film. The multilayer strategy proposed in this study is promising for the fabrication of transparent and hybrid thin-film thermoelectrics with high thermoelectric performances.

Sb₂S₃@PPy Coaxial Nanorods: A Versatile and Robust Host Material for Reversible Storage of Alkali Metal Ions

Chalcogenides have attracted great attention as functional materials in optics, electronics, and energy-related applications due to their typical semiconductor properties. Among those chalcogenides, Sb₂S₃ holds great promise in energy storage field, especially as an anode material for alkali metal (Li, Na, and K) batteries. In this work, a one-dimensional coaxial Sb₂S₃@PPy is investigated as a versatile and robust anode in three kinds of alkali metal batteries for the first time, and the energy storage mechanism of these batteries is systematically discussed. As an anode material for sodium ion batteries (SIBs) and potassium ion batteries (KIBs), Sb₂S₃@PPy exhibits high reversible capacity and impressive cycle lifespan. Sb₂S₃@PPy anode demonstrates an adsorption behavior that has a significant influence on its sodium storage behavior, providing a universal model for studying the application of chalcogenide compounds.

A HfO₂/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation

Volatile programmable metallization cell is a promising threshold switching selector with excellent characteristics and simple structures. However, the large variation of threshold voltage is a major problem for practical application. In this work, we propose a dual-layer structure to increase selectivity and improve the threshold voltage variation. Compared to single-layer devices, this dual-layer device exhibits higher selectivity (>10⁷) and better threshold voltage uniformity with less than 5% fluctuation during 200 DC switching. The improvement is attributed to good control on the location of the filament formation and rupture after introducing a HfO₂ layer. It is deduced that a major factor consists of the difference of Ag ions mobility between SiTe and HfO₂ due to the grain boundary quantity.

Bimolecular Cross-Metathesis of a Tetrasubstituted Alkene with Allylic Sulfones

Exquisite control of catalytic metathesis reactivity is possible through ligand‐based variation of ruthenium carbene complexes. Sterically hindered alkenes, however, remain a generally recalcitrant class of substrates for intermolecular cross‐metathesis. Allylic chalcogenides (sulfides and selenides) have emerged as “privileged” substrates that exhibit enhanced turnover rates with the commercially available second‐generation ruthenium catalyst. Increased turnover rates are advantageous when competing catalyst degradation is limiting, although specific mechanisms have not been defined. Herein, we describe facile cross‐metathesis of allylic sulfone reagents with sterically hindered isoprenoid alkene substrates. Furthermore, we demonstrate the first example of intermolecular cross‐metathesis of ruthenium carbenes with a tetrasubstituted alkene. Computational analysis by combined coupled cluster/DFT calculations exposes a favorable energetic profile for metallacyclobutane formation from chelating ruthenium β‐chalcogenide carbene intermediates. These results establish allylic sulfones as privileged reagents for a substrate‐based strategy of cross‐metathesis derivatization.

Influence of Substrates on the Long-Range Order of Photoelectrodeposited Se-Te Nanostructures

The long-range order of anisotropic phototropic Se-Te films grown electrochemically at room temperature under uniform-intensity, polarized, incoherent, near-IR illumination has been investigated using crystalline (111)-oriented Si substrates doped degenerately with either p- or n-type dopants. Fourier-transform (FT) analysis was performed on large-area images obtained with a scanning electron microscope, and peak shapes in the FT spectra were used to determine the pattern fidelity in the deposited Se-Te films. Under nominally identical illumination conditions, phototropic films grown on p⁺-Si(111) exhibited a higher degree of anisotropy and a more well-defined pattern period than phototropic films grown on n⁺-Si(111). Similar differences in the phototropic Se-Te deposit morphology and pattern fidelity on p⁺-Si versus n⁺-Si were observed when the deposition rate and current densities were controlled for by adjusting the deposition parameters and illumination conditions. The doping-related effects of the Si substrate on the pattern fidelity of the phototropic Se-Te deposits are ascribable to an electrical effect produced by the different interfacial junction energetics between Se-Te and p⁺-Si versus n⁺-Si that influences the dynamic behavior during phototropic growth at the Se-Te/Si interface.

Large-Area Broadband Near-Perfect Absorption from a Thin Chalcogenide Film Coupled to Gold Nanoparticles

Perfect absorbers that can efficiently absorb electromagnetic waves over a broad spectral range are crucial for energy harvesting, light detection, and optical camouflage. Recently, perfect absorbers based on a metasurface have attracted intensive attention. However, high-performance metasurface absorbers in the visible spectra require strict fabrication tolerances, and this is a formidable challenge. Moreover, fabricating subwavelength meta-atoms requires a top-down approach, thus limiting their scalability and spectral applicability. Here, we introduce a plasmonic nearly perfect absorber that exhibits a measured polarization-insensitive absorptance of ∼92% across the spectral region from 400 to 1000 nm. The absorber is realized via a one-step self-assembly deposition of 50 nm gold (Au) nanoparticle (NP) clusters onto a 35 nm-thick Ge₂Sb₂Te₅ (GST225) chalcogenide film. An excellent agreement between the measured and theoretically simulated absorptance was found. The coalescence of the lossy GST225 dielectric layer and high density of localized surface plasmon resonance modes induced by the randomly distributed Au NPs play a vital role in obtaining the nearly perfect absorptance. The exceptionally high absorptance together with large-area high-throughput self-assembly fabrication demonstrates their potential for industrial-scale manufacturability and consequential widespread applications in thermophotovoltaics, photodetection, and sensing.

Influence of the Chalcogen Element on the Filament Stability in CuIn(Te,Se,S)2/Al2O3 Filamentary Switching Devices

In this paper, we report on the use of CuInX₂ (X = Te, Se, S) as a cation supply layer in filamentary switching applications. Being used as absorber layers in solar cells, we take advantage of the reported Cu ionic conductivity of these materials to investigate the effect of the chalcogen element on filament stability. In situ X-ray diffraction showed material stability attractive for back-end-of-line in semiconductor industry. When integrated in 580 μm diameter memory cells, more volatile switching was found at low compliance current using CuInS₂ and CuInSe₂ compared to CuInTe₂, which is ascribed to the natural tendency for Cu to diffuse back from the switching layer to the cation supply layer because of the larger difference in electrochemical potential using Se or S. Low-current and scaled behavior was also confirmed using conductive atomic force microscopy. Hence, by varying the chalcogen element, a method is presented to modulate the filament stability.

Fabrication of Polyaniline-Coated SnSeS Nanosheet/Polyvinylidene Difluoride Composites by a Solution-Based Process and Optimization for Flexible Thermoelectrics

The fabrication of dodecylbenzenesulfonic acid-doped polyaniline (PANI)-coated SnSe_0.8S_0.2 (PANI-SnSeS) nanosheets and their application to flexible thermoelectric composite films are demonstrated. The thermoelectric power factor of PANI-SnSeS nanosheets was optimized by manipulating the number of PANI coating cycles, and changes in their electrical conductivity and Seebeck coefficients were investigated and analyzed by considering carrier transport properties. An optimized, solution-based procedure for introducing inorganic nanoparticles comprising PANI-SnSeS nanosheets into a polyvinylidene fluoride (PVDF) matrix maximized the power factor. A composite film with a PANI-SnSeS nanosheet-to-PVDF weight ratio of 2:1 showed outstanding durability and thermoelectric performance, exhibiting a maximum power factor of ∼134 μW/m·K² at 400 K. These results demonstrate that the incorporation of conductive PANI into SnSeS nanosheets can facilitate high-performance flexible thermoelectric applications.

Chalcogenide Aerogels as Sorbents for Noble Gases (Xe, Kr)

High-surface-area molybdenum sulfide (MoS_x) and antimony sulfide (SbS_x) chalcogels were studied for Xe/Kr gas separation. The intrinsic soft Lewis basic character of the chalcogel framework is a unique property among the large family of porous materials and lends itself to a potential new approach toward the selective separation of Xe over Kr. Among these chalcogels, MoS_x shows the highest Xe and Kr uptake, reaching 0.69 mmol g^-1 (1.05 mmol cm^-3) and 0.28 mmol g^-1 (0.42 mmol cm^-3) respectively, at 273 K and 1 bar. The corresponding isosteric heat of adsorption at zero coverage (Q_st⁰) is 22.8 and 18.6 kJ mol^-1 and both are the highest among the selected chalcogels. The IAST (10:90) Xe/Kr selectivity at 273 K for MoS_x is 6.0, whereas for SbS_x chalcogels, it varies in the range 2.0-2.8. The higher formal charge of molybdenum, Mo⁴⁺, in MoS_x versus that of antimony, Sb³⁺, in SbS_x coupled with its larger atomic size could induce higher polarizability in the MoS_x framework and therefore higher Xe/Kr selectivity.

Metasurfaces Based on Phase-Change Material as a Reconfigurable Platform for Multifunctional Devices

Integration of phase-change materials (PCMs) into electrical/optical circuits has initiated extensive innovation for applications of metamaterials (MMs) including rewritable optical data storage, metasurfaces, and optoelectronic devices. PCMs have been studied deeply due to their reversible phase transition, high endurance, switching speed, and data retention. Germanium-antimony-tellurium (GST) is a PCM that has amorphous and crystalline phases with distinct properties, is bistable and nonvolatile, and undergoes a reliable and reproducible phase transition in response to an optical or electrical stimulus; GST may therefore have applications in tunable photonic devices and optoelectronic circuits. In this progress article, we outline recent studies of GST and discuss its advantages and possible applications in reconfigurable metadevices. We also discuss outlooks for integration of GST in active nanophotonic metadevices.

An Application of Chalcogenide Alloy Other than Storage Memory Field

BACKGROUND

The necessity to handle mechanical functionality at nanoscale has recently motivated the prosperity of the nanoelectromechanical systems (NEMs). The fabrication of NEMS strongly depends on the so-called "topdown" techniques that are however limited by the resolution of electronbeam lithography. Meanwhile, the size of the NEMS needs to be shrunk continuously in order to further enhance the system performance. As a result, current research interest has been dedicated to "bottomup" techniques or even a hybridization of two aforementioned approaches, leading to the presence of the nanowire-based NEMs. Here, we presented some recent patent for nanowire-based NEMS.

METHODS

We investigate the resonant frequency and the frequency tuneability of the nanowire-based nanoelectromechanical system using Ge2Sb2Te5 media. By varying the nanowire dimensions, corresponding resonant frequencies and frequency tuneability are calculated using an established mechanical model.

RESULTS

We theoretically study the frequency tuneability of the nanowire-based NEMs using GST media. The resonant frequencies and the corresponding frequency tuneabilities for different nanowire dimensions are investigated using a developed mechanical model, and a previously established electrothermal model is performed to imitate the frequency tuning behavior of the system along with the phase-change phenomenon. By carefully controlling the amorphous fraction of the active region, a very high resonant frequency can be tuned within an ultra-high adjustable bandwidth. In addition, the merits of the phase-change memories including great scalability, low power consumption, fast transition time, and non-volatility can be also found on the proposed system. These results will open up a route for designing the next generation NEMs, and also pioneer a new application field for the GST media.

CONCLUSIONS

Today phase-change materials have received a wide range of applications from nonvolatile memories to neuromorphic networks due to its unique combinations of structural, electrical, and thermal properties. However, as the mechanical properties of phase-change materials exhibits a remarkable difference between the amorphous and crystalline phases, the feasibility of continuously changing the resonant frequency of the nanowires based on phase-change materials becomes viable.

Vacancy-Contained Tetragonal Na3SbS4 Superionic Conductor

Tetragonal Na₃SbS₄ is synthesized as a new sodium superionic conductor. The discovery of Na vacancies experimentally verifies previous theoretical predictions. Na vacancies, distorted cubic sulphur sublattices and large Na atomic displacement parameters lead to the ionic conductivity as high as 3 mS cm^-1, a value significantly higher than those of state-of-the-art sodium sulfide electrolytes.

Crystal structure of chlorido-[trans-1-(di-phenyl-phosphane-thioyl-κS)-2-(di-phenyl-phosphano-yl)ethene]gold(I) di-chloro-methane hemisolvate

The title compound crystallizes with a trans-O—P⋯P—S geometry of the groups either side of the C=C double bond.

The title compound, [AuCl(C₂₆H₂₂OP₂S)]·0.5CH₂Cl₂, crystallizes with a trans-O—P⋯P—S geometry of the groups either side of the C=C double bond, which prevents any intra­molecular contact between the Au and O atoms. The Au^I atom exhibits a nearly linear coordination [Cl—Au—S = 177.55 (4)°]. The mol­ecules associate to form broad ribbons parallel to the c axis via two C—H⋯O, one C—H⋯Cl(Au) and one Au⋯Cl inter­action.

Effects of Carbon Allotrope Interface on the Photoactivity of Rutile One-Dimensional (1D) TiO2 Coated with Anatase TiO2 and Sensitized with CdS Nanocrystals

The assembly of a large-bandgap one-dimensional (1D) oxide-conductive carbon-chalcogenide nanocomposite and its surface, optical, and photoelectrochemical properties are presented. Microscopy, surface analysis, and optical spectroscopy results are reported to provide insights into the assembly of the nanostructure. We have investigated (i) how the various carbon allotropes (C60), reduced graphene oxide (RGO), carbon nanotubes (CNTs), and graphene quantum dots (GQDs) can be integrated at the interface of the 1D TiO2 and zero-dimensional (0D) CdS nanocrystals; (ii) the carbon allotrope and CdS loading effects; (iii) the impact of the carbon allotrope presence on 0D CdS nanocrystals; and (iv) how they promote light absorbance. Subsequently, the functioning of the integrated nanostructured assembly in a photoelectrochemical cell has been systematically investigated. These studies include (i) chronoamperometry, (ii) impedance measurements or EIS, and (iii) linear sweep voltammetry. The results indicate that the presence of a GQD interface shows the most enhancement in the photoelectrochemical properties. The optimized photocurrent values were respectively noted to be 2.8, 2.2, 1.9, and 1.6 mA/cm(2), indicating JGQD > JRGO > JCNT > Jfullerene. Furthermore, the annealing conditions have indicated that ammonia treatment leads to an increase in the photoelectrochemical responses when using any form of the carbon allotropes.

Morphological Expression of the Coherence and Relative Phase of Optical Inputs to the Photoelectrodeposition of Nanopatterned Se-Te Films

Highly anisotropic and ordered nanoscale lamellar morphologies can be spontaneously generated over macroscopic areas, without the use of a photomask or any templating agents, via the photoelectrodeposition of Se-Te alloy films. To form such structures, the light source can be a single, linearly polarized light source that need not necessarily be highly coherent. In this work, the variation in the morphologies produced by this deposition process was evaluated in response to differences in the coherence and relative phase between multiple simultaneous linearly polarized illumination inputs. Specifically, the morphologies of photoelectrodeposits were evaluated when two tandem same-wavelength sources with discrete linear polarizations, both either mutually incoherent or mutually coherent (with defined phase differences), were used. Additionally, morphologies were simulated via computer modeling of the interfacial light scattering and absorption during the photoelectrochemical growth process. The morphologies that were generated using two coherent, in-phase sources were equivalent to those generated using only a single source. In contrast, the use of two coherent, out-of-phase sources produced a range of morphological patterns. For small out-of-phase addition of orthogonal polarization components, lamellar-type patterns were observed. When fully out-of-phase orthogonal sources (circular polarization) were used, an isotropic, mesh-type pattern was instead generated, similar to that observed when unpolarized illumination was utilized. In intermediate cases, anisotropic lamellar-type patterns were superimposed on the isotropic mesh-type patterns, and the relative height between the two structures scaled with the amount of out-of-phase addition of the orthogonal polarization components. Similar results were obtained when two incoherent sources were utilized. In every case, the long axis of the lamellar-type morphology component aligned parallel to the intensity-weighted average polarization orientation. The observations consistently agreed with computer simulations, indicating that the observed morphologies were fully determined by the nature of the illumination utilized during the growth process. The collective data thus indicated that the photoelectrodeposition process exhibits sensitivity toward the coherency, relative phase, and polarization orientations of all optical inputs and that this sensitivity is physically expressed in the morphology of the deposit.

Expanding the Repertoire of Molecular Linkages to Silicon: Si-S, Si-Se, and Si-Te Bonds

Silicon is the foundation of the electronics industry and is now the basis for a myriad of new hybrid electronics applications, including sensing, silicon nanoparticle-based imaging and light emission, photonics, and applications in solar fuels, among others. From interfacing of biological materials to molecular electronics, the nature of the chemical bond plays important roles in electrical transport and can have profound effects on the electronics of the underlying silicon itself, affecting its work function, among other things. This work describes the chemistry to produce ≡Si-E bonds (E = S, Se, and Te) through very fast microwave heating (10-15 s) and direct thermal heating (hot plate, 2 min) through the reaction of hydrogen-terminated silicon surfaces with dialkyl or diaryl dichalcogenides. The chemistry produces surface-bound ≡Si-SR, ≡Si-SeR, and ≡Si-TeR groups. Although the interfacing of molecules through ≡Si-SR and ≡Si-SeR bonds is known, to the best of our knowledge, the heavier chalcogenide variant, ≡Si-TeR, has not been described previously. The identity of the surface groups was determined by Fourier transform infrared (FTIR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and depth profiling with time-of-flight-secondary ionization mass spectrometry (ToF-SIMS). Possible mechanisms are outlined, and the most likely, based upon parallels with well-established molecular literature, involve surface silyl radicals or dangling bonds that react with either the alkyl or aryl dichalcogenide directly, REER, or its homolysis product, the alkyl or aryl chalcogenyl radical, RE· (where E = S, Se, and Te).

Polarization Control of Morphological Pattern Orientation During Light-Mediated Synthesis of Nanostructured Se-Te Films

The template-free growth of well ordered, highly anisotropic lamellar structures has been demonstrated during the photoelectrodeposition of Se-Te films, wherein the orientation of the pattern can be directed by orienting the linear polarization of the incident light. This control mechanism was investigated further herein by examining the morphologies of films grown photoelectrochemically using light from two simultaneous sources that had mutually different linear polarizations. Photoelectrochemical growth with light from two nonorthogonally polarized same-wavelength sources generated lamellar morphologies in which the long axes of the lamellae were oriented parallel to the intensity-weighted average polarization orientation. Simulations of light scattering at the solution-film interface were consistent with this observation. Computer modeling of these growths using combined full-wave electromagnetic and Monte Carlo growth simulations successfully reproduced the experimental morphologies and quantitatively agreed with the pattern orientations observed experimentally by considering only the fundamental light-material interactions during growth. Deposition with light from two orthogonally polarized same-wavelength as well as different-wavelength sources produced structures that consisted of two intersecting sets of orthogonally oriented lamellae in which the relative heights of the two sets could be varied by adjusting the relative source intensities. Simulations of light absorption were performed in analogous, idealized intersecting lamellar structures and revealed that the lamellae preferentially absorbed light polarized with the electric field vector along their long axes. These data sets cumulatively indicate that anisotropic light scattering and light absorption generated by the light polarization produces the anisotropic morphology and that the resultant morphology is a function of all illumination inputs despite differing polarizations.

Self-Optimizing Photoelectrochemical Growth of Nanopatterned Se-Te Films in Response to the Spectral Distribution of Incident Illumination

Photoelectrochemical growth of Se-Te films spontaneously produces highly ordered, nanoscale lamellar morphologies with periodicities that can be tuned by varying the illumination wavelength during deposition. This phenomenon has been characterized further herein by determining the morphologies of photoelectrodeposited Se-Te films in response to tailored spectral illumination profiles. Se-Te films grown under illumination from four different sources, having similar average wavelengths but having spectral bandwidths that spanned several orders of magnitude, all nevertheless produced similar structures which had a single, common periodicity as quantitatively identified via Fourier analysis. Film deposition using simultaneous illumination from two narrowband sources, which differed in average wavelength by several hundred nanometers, resulted in a structure with only a single periodicity intermediate between the periods observed when either source alone was used. This single periodicity could be varied by manipulating the relative intensity of the two sources. An iterative model that combined full-wave electromagnetic effects with Monte Carlo growth simulations, and that considered only the fundamental light-material interactions during deposition, was in accord with the morphologies observed experimentally. Simulations of light absorption and concentration in idealized lamellar arrays, in conjunction with all of the available data, additionally indicated that a self-optimization of the periodicity of the nanoscale pattern, resulting in the maximization of the anisotropy of interfacial light absorption in the three-dimensional structure, is consistent with the observed growth process of such films.

Structural Origin of the Band Gap Anomaly of Quaternary Alloy Cd(x)Zn(1-x)S(y)Se(1-y) Nanowires, Nanobelts, and Nanosheets in the Visible Spectrum

Single-crystalline alloy II-VI semiconductor nanostructures have been used as functional materials to propel photonic and optoelectronic device performance in a broad range of the visible spectrum. Their functionality depends on the stable modulation of the direct band gap (Eg), which can be finely tuned by controlling the properties of alloy composition, crystallinity, and morphology. We report on the structural correlation of the optical band gap anomaly of quaternary alloy CdxZn1-xSySe1-y single-crystalline nanostructures that exhibit different morphologies, such as nanowires (NWs), nanobelts (NBs), and nanosheets (NSs), and cover a wide range of the visible spectrum (Eg = 1.96-2.88 eV). Using pulsed laser deposition, the nanostructures evolve from NWs via NBs to NSs with decreasing growth temperature. The effects of the growth temperature are also reflected in the systematic variation of the composition. The alloy nanostructures firmly maintain single crystallinity of the hexagonal wurtzite and the nanoscale morphology, with no distortion of lattice parameters, satisfying the virtual crystal model. For the optical properties, however, we observed distinct structure-dependent band gap anomalies: the disappearance of bowing for NWs and maximum and slightly reduced bowing for NBs and NSs, respectively. We tried to uncover the underlying mechanism that bridges the structural properties and the optical anomaly using an empirical pseudopotential model calculation of electronic band structures. From the calculations, we found that the optical bowings in NBs and NSs were due to residual strain, by which they are also distinguishable from each other: large for NBs and small for NSs. To explain the origin of the residual strain, we suggest a semiempirical model that considers intrinsic atomic disorder, resulting from the bond length mismatch, combined with the strain relaxation factor as a function of the width-to-thickness ratio of the NBs or NSs. The model agreed well with the observed optical bowing of the alloy nanostructures in which a mechanism for the maximum bowing for NBs is explained. The present systematic study on the structural-optical properties correlation opens a new perspective to understand the morphology- and composition-dependent unique optical properties of II-VI alloy nanostructures as well as a comprehensive strategy to design a facile band gap modulation method of preparing photoconverting and photodetecting materials.

Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers

Understanding the interfacial electrical properties between metallic electrodes and low-dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced crossover of electrical contact at Au/MoS2 interfaces. For MoS2 thicker than 5 layers, the contact resistivity slightly decreases with reducing MoS2 thickness. By contrast, the contact resistivity sharply increases with reducing MoS2 thickness below 5 layers, mainly governed by the quantum confinement effect. We find that the interfacial potential barrier can be finely tailored from 0.3 to 0.6 eV by merely varying MoS2 thickness. A full evolution diagram of energy level alignment is also drawn to elucidate the thickness scaling effect. The finding of tailoring interfacial properties with channel thickness represents a useful approach controlling the metal/semiconductor interfaces which may result in conceptually innovative functionalities.

Inelastic Neutron Scattering Investigation in Glassy SiSe2: Complex Dynamics at the Atomic Scale

A detailed investigation of the THz dynamics in glassy SiSe2 by means of neutron inelastic scattering is presented. To carefully map the translational dynamics and the region of the boson peak, we carried out two different experiments with sharp and broad resolutions coupled with a narrow and a wide kinematic range, respectively. Data show a complex pattern of excitations made up of three components. The most intense one is the prolongation of the longitudinal acoustic mode while two other modes appear in the boson peak region below 3 meV. We propose an interaction model that allows for a consistent identification of the nature of these modes.

Chalcogenide glass optical waveguides for infrared biosensing

Due to the remarkable properties of chalcogenide (Chg) glasses, Chg optical waveguides should play a significant role in the development of optical biosensors. This paper describes the fabrication and properties of chalcogenide fibres and planar waveguides. Using optical fibre transparent in the mid-infrared spectral range we have developed a biosensor that can collect information on whole metabolism alterations, rapidly and in situ. Thanks to this sensor it is possible to collect infrared spectra by remote spectroscopy, by simple contact with the sample. In this way, we tried to determine spectral modifications due, on the one hand, to cerebral metabolism alterations caused by a transient focal ischemia in the rat brain and, in the other hand, starvation in the mouse liver. We also applied a microdialysis method, a well known technique for in vivo brain metabolism studies, as reference. In the field of integrated microsensors, reactive ion etching was used to pattern rib waveguides between 2 and 300 μm wide. This technique was used to fabricate Y optical junctions for optical interconnections on chalcogenide amorphous films, which can potentially increase the sensitivity and stability of an optical micro-sensor. The first tests were also carried out to functionalise the Chg planar waveguides with the aim of using them as (bio)sensors.