8-inch Wafer-scale Epitaxial Monolayer MoS2

Large-scale, high-quality, and uniform monolayer MoS2 films are crucial for their applications in next-generation electronics and optoelectronics. Epitaxy is a mainstream technique for achieving high-quality MoS2 films and has been demonstrated at a wafer scale up to 4-inch. In this study, we report the epitaxial growth of 8-inch wafer-scale highly oriented monolayer MoS2 on sapphire with excellent spatial homogeneity, using a specially designed vertical chemical vapor deposition (VCVD) system. Field effect transistors (FETs) based on the as-grown 8-inch wafer-scale monolayer MoS2 film were fabricated and exhibited high performances, with an average mobility and an on/off ratio of 53.5 cm2V-1s-1 and 107, respectively. In addition, batch fabrication of logic devices and 11-stage ring oscillators were also demonstrated, showcasing excellent electrical functions. Our work may pave way of MoS2 in practical industry-scale applications. This article is protected by copyright. All rights reserved.

Observation of Strong Anisotropic Interlayer Excitons

Anisotropic interlayer excitons had been theoretically predicted to exist in two-dimensional (2D) anisotropy/isotropy van der Waals heterojunctions. However, experimental results consolidating the theoretical prediction and exploring the related anisotropic optoelectronic response have not been reported so far. Herein, strong photoluminescence (PL) of anisotropic interlayer excitons is observed in a symmetric anisotropy/isotropy/anisotropy heterojunction exemplified by 3L-ReS2/1L-MoS2/3L-ReS2 using monolayer (1L) MoS2 and trilayer (3L) ReS2 as components. Sharp interlayer exciton PL peaks centered at ∼1.64, ∼1.61, and ∼1.57 eV are only observed at low temperatures of ≤120 K and become more pronounced as the temperature decreases. These interlayer excitons exhibit strong anisotropic PL intensity variations with periodicities of 180° as functions of the incident laser polarization angles. The polarization ratios of these interlayer excitons are calculated to be 1.33-1.45. Our study gives new insight into the manipulation of excitons in 2D materials and paves a new way for a rational design of novel anisotropic optoelectronic devices.

Reduced Defect Density in MOCVD-Grown MoS2 by Manipulating the Precursor Phase

Advancements in the synthesis of large-area, high-quality two-dimensional transition metal dichalcogenides such as MoS2 play a crucial role in the development of future electronic and optoelectronic devices. The presence of defects formed by sulfur vacancies in MoS2 results in low photoluminescence emission and imparts high n-type doping behavior, thus substantially affecting material quality. Herein, we report a new method in which single-phase (liquid) precursors are used for the metal-organic chemical vapor deposition (MOCVD) growth of a MoS2 film. Furthermore, we fabricated a high-performance photodetector (PD) and achieved improved photoresponsivity and faster photoresponse in the spectral range 405-637 nm compared to those of PDs fabricated by the conventional MOCVD method. In addition, the fabricated MoS2 thin film showed a threshold voltage shift in the positive gate bias direction owing to the reduced number of S vacancy defects in the MoS2 lattice. Thus, our method significantly improved the synthesis of monolayer MoS2 and can expand the application scope of high-quality, atomically thin materials in large-scale electronic and optoelectronic devices.

CVD Synthesis of MoS2 Using a Direct MoO2 Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions

In this study, the influence of growth temperature variation on the synthesis of MoS2 using a direct MoO2 precursor was investigated. The research showed that the growth temperature had a strong impact on the resulting morphologies. Below 650 °C, no nucleation or growth of MoS2 occurred. The optimal growth temperature for producing continuous MoS2 films without intermediate-state formation was approximately 760 °C. However, when the growth temperatures exceeded 800 °C, a transition from pure MoS2 to predominantly intermediate states was observed. This was attributed to enhanced diffusion of the precursor at higher temperatures, which reduced the local S:Mo ratio. The diffusion equation was analyzed, showing how the diffusion coefficient, diffusion length, and concentration gradients varied with temperature, consistent with the experimental observations. This study also investigated the impact of increasing the MoO2 precursor amount, resulting in the formation of multilayer MoS2 domains at the outermost growth zones. These findings provide valuable insights into the growth criteria for the effective synthesis of clean and large-area MoS2, thereby facilitating its application in semiconductors and related industries.

MoS2-Plasmonic Nanocavities for Raman Spectra of Single Extracellular Vesicles Reveal Molecular Progression in Glioblastoma

Extracellular vesicles (EVs) are continually released from cancer cells into biofluids, carrying actionable molecular fingerprints of the underlying disease with considerable diagnostic and therapeutic potential. The scarcity, heterogeneity and intrinsic complexity of tumor EVs present a major technological challenge in real-time monitoring of complex cancers such as glioblastoma (GBM). Surface-enhanced Raman spectroscopy (SERS) outputs a label-free spectroscopic fingerprint for EV molecular profiling. However, it has not been exploited to detect known biomarkers at the single EV level. We developed a multiplex fluidic device with embedded arrayed nanocavity microchips (MoSERS microchip) that achieves 97% confinement of single EVs in a minute amount of fluid (<10 μL) and enables molecular profiling of single EVs with SERS. The nanocavity arrays combine two featuring characteristics: (1) An embedded MoS₂ monolayer that enables label-free isolation and nanoconfinement of single EVs due to physical interaction (Coulomb and van der Waals) between the MoS₂ edge sites and the lipid bilayer; and (2) A layered plasmonic cavity that enables sufficient electromagnetic field enhancement inside the cavities to obtain a single EV level signal resolution for stratifying the molecular alterations. We used the GBM paradigm to demonstrate the diagnostic potential of the SERS single EV molecular profiling approach. The MoSERS multiplexing fluidic achieves parallel signal acquisition of glioma molecular variants (EGFRvIII oncogenic mutation and MGMT expression) in GBM cells. The detection limit of 1.23% was found for stratifying these key molecular variants in the wild-type population. When interfaced with a convolutional neural network (CNN), MoSERS improved diagnostic accuracy (87%) with which GBM mutations were detected in 12 patient blood samples, on par with clinical pathology tests. Thus, MoSERS demonstrates the potential for molecular stratification of cancer patients using circulating EVs.

A Voltage-Tuned Terahertz Absorber Based on MoS2/Graphene Nanoribbon Structure

Terahertz frequency has promising applications in communication, security scanning, medical imaging, and industry. THz absorbers are one of the required components for future THz applications. However, nowadays, obtaining a high absorption, simple structure, and ultrathin absorber is a challenge. In this work, we present a thin THz absorber that can be easily tuned through the whole THz range (0.1-10 THz) by applying a low gate voltage (<1 V). The structure is based on cheap and abundant materials (MoS₂/graphene). Nanoribbons of MoS₂/graphene heterostructure are laid over a SiO₂ substrate with an applied vertical gate voltage. The computational model shows that we can achieve an absorptance of approximately 50% of the incident light. The absorptance frequency can be tuned through varying the structure and the substrate dimensions, where the nanoribbon width can be varied approximately from 90 nm to 300 nm, while still covering the whole THz range. The structure performance is not affected by high temperatures (500 K and above), so it is thermally stable. The proposed structure represents a low-voltage, easily tunable, low-cost, and small-size THz absorber that can be used in imaging and detection. It is an alternative to expensive THz metamaterial-based absorbers.

Exciton Lifetime and Optical Line Width Profile via Exciton-Phonon Interactions: Theory and First-Principles Calculations for Monolayer MoS2

Exciton dynamics dictates the evolution of photoexcited carriers in photovoltaic and optoelectronic devices. However, interpreting their experimental signatures is a challenging theoretical problem due to the presence of both electron-phonon and many-electron interactions. We develop and apply here a first-principles approach to exciton dynamics resulting from exciton-phonon coupling in monolayer MoS₂ and reveal the highly selective nature of exciton-phonon coupling due to the internal spin structure of excitons, which leads to a surprisingly long lifetime of the lowest-energy bright A exciton. Moreover, we show that optical absorption processes rigorously require a second-order perturbation theory approach, with photon and phonon treated on an equal footing, as proposed by Toyozawa and Hopfield. Such a treatment, thus far neglected in first-principles studies, gives rise to off-diagonal exciton-phonon self-energy, which is critical for the description of dephasing mechanisms and yields exciton line widths in excellent agreement with experiment.

A modified CVD method for the synthesis of monolayer MoS2 and photoelectric improvement by HfO2 passivation

Molybdenum disulfide (MoS2) is an emerging class of new materials with a wide range of potential practical applications. However, the uncontrollability of monolayer MoS2 synthesized by traditional chemical vapor deposition method and the low responsivity of MoS2 photodetectors limit its further development in the field of photoelectric detection. To achieve controlled growth of monolayer MoS2 and construct MoS2 photodetectors with a high responsivity, we propose a novel single crystal growth strategy of high-quality MoS2 by controlling the Mo to S vapor ratio near the substrate, and deposit a layer of hafnium oxide (HfO2) on the surface of MoS2 to enhance the performance of the pristine metal-semiconductor-metal structure photodetector. At a reverse bias of 8 V, the HfO2 passivated MoS2 photodetector features an extremely high responsivity of 1201 A/W, a response time of around 0.5 s, and a detectivity of 7.7×10^11 Jones. Meanwhile, we deeply investigate the effect of the HfO2 layer on the performance of the fabricated MoS2 photodetector and propose a physical mechanism to interpret the obtained experiment results. These results might facilitate a better understanding on the performance modulation of the MoS2 photodetectors and accelerate the development of MoS2-based optoelectronic devices.

Electrical performance of monolayer MoS2transistor with MoS2nanobelt metallic edges as electrodes

The contact electrodes have great influence on the performance of monolayer MoS₂devices. In this paper, monolayer MoS₂and MoS₂nanobelts were synthesized on SiO₂/Si substrates via the chemical vapor deposition method. By using wet and dry transfer process, MoS₂nanobelt metallic edges were designed as the source/drain contact electrodes of monolayer MoS₂field effect transistor. The 'nanobelt metallic edges' refers to the top surface of the nanobelt being metallic. Because the base planes of MoS₂nanobelt vertically stand on the substrate, which makes the layer edges form the top surface of the nanobelt. The nonlinearI_ds-V_dscharacteristics of the device indicates that the contact between the monolayer MoS₂and MoS₂metallic edges displays a Schottky-like behavior. The back-gated transfer characteristics indicate that monolayer MoS₂device with MoS₂nanobelt metallic edges as electrodes shows an n-type behavior with a mobility of ∼0.44 cm²V^-1·s^-1, a carrier concentration of ∼7.31 × 10¹¹cm^-2, and an on/off ratio of ∼10³. The results enrich the electrode materials of two-dimensional material devices and exhibit potential for future application of MoS₂metallic edges in electronic devices.

Nucleation and Growth of Monolayer MoS2 at Multisteps of MoO2 Crystals by Sulfurization

Two-dimensional (2D) materials and their heterostructures are promising for next-generation optoelectronics, spintronics, valleytronics, and electronics. Despite recent progress in various growth studies of 2D materials, mechanical exfoliation of flakes is still the most common method to obtain high-quality 2D materials because precisely controlling material growth and synthesizing a single domain during the growth process of 2D materials, for the desired shape and quality, is challenging. Here, we report the nucleation and growth behaviors of monolayer MoS₂ by sulfurizing a faceted monoclinic MoO₂ crystal. The MoS₂ layers nucleated at the thickness steps of the MoO₂ crystal and grew epitaxially with crystalline correlation to the MoO₂ surface. The epitaxially grown MoS₂ layer expands outwardly on the SiO₂ substrate, resulting in a monolayer single-crystal film, despite multiple nucleations of MoS₂ layers on the MoO₂ surface owing to several thickness steps. Although the photoluminescence of MoS₂ is quenched owing to efficient charge transfer between MoS₂ and metallic MoO₂, the MoS₂ stretched out to the SiO₂ substrate shows a high carrier mobility of (15 cm² V^-1 s^-1), indicating that a high-quality monolayer MoS₂ film can be grown using the MoO₂ crystal as a seed and precursor. Our work shows a method to grow high-quality MoS₂ using a faceted MoO₂ crystal and provides a deeper understanding of the nucleation and growth of 2D materials on a step-like surface.

Comparative Study between Sulfurized MoS2 from Molybdenum and Molybdenum Trioxide Precursors for Thin-Film Device Applications

Two-dimensional (2D) materials have been studied as an emerging class of nanomaterials owing to their attractive properties in nearly every field of science and technology. Molybdenum disulfide (MoS₂) is one of the more promising candidates of these atomically thin 2D materials for its technological potential. The facile synthesis of MoS₂ remains a matter of broad interest. In this study, MoS₂ was synthesized by chemical vapor deposition sulfurization at various temperatures (550 °C, 650 °C, and 750 °C) of either precursor molybdenum metal (Mo) or molybdenum trioxide (MoO₃) deposited on silicon/silicon dioxide (Si/SiO₂) via e-beam evaporation. Monolayer, bilayer, and few layers sulfurized samples have been grown and verified by Raman, photoluminescence spectroscopy, XRD, XPS, and AFM. MoO₃ sulfurization provided monolayer growth in comparison to Mo sulfurization under the same conditions and precursor thicknesses. Optical microscopy showed the homogeneous nature of grown samples. A main finding of this work is that MoO₃ sulfurization produced higher quality MoS₂ as compared to those grown by an Mo precursor. Device characteristics based on monolayer MoO₃ sulfurized MoS_2-x include nonvolatile resistive switching with I_on/I_off ≈ 10⁴ at a relatively low operating bias of ±1 V. In addition, field-effect transistor characteristics revealed p-type material growth with a carrier mobility ∼ 41 cm² V^-1 s^-1, which is in contrast to typically observed n-type characteristics.

Resistive switching mechanism of MoS2based atomristor

The non-volatile resistive switching process of a MoS₂based atomristor with a vertical structure is investigated by first-principles calculations. It is found that the monolayer MoS₂with a S vacancy defect (VS) could maintain an insulation characteristic and a high resistance state (HRS) is remained. As an electrode metal atom is adsorbed on the MoS₂monolayer, the semi-conductive filament is formed with the assistance ofVS. Under this condition, the atomristor presents a low resistance state (LRS). The ON state current of this semi-filament is increased close to two orders of magnitude larger than that without the filament. The energy barrier for an Au-atom to penetrate the monolayer MoS₂viaVSis as high as 6.991 eV. When it comes to a double S vacancy (VS2), the energy barrier is still amounted to 3.554 eV, which manifests the bridge-like full conductive filament cannot form in monolayer MoS₂based atomristor. The investigation here promotes the atomic level understanding of the resistive switching properties about the monolayer MoS₂based memristor. The physics behind should also work in atomristors based on other monolayer transition-metal dichalcogenides, like WSe₂and MoTe₂. The investigation will be a reference for atomristor-device design or optimization.

Efficient Optical Modulation of Exciton State Population in Monolayer MoS2 at Room Temperature

The modulation of exciton energy and state density of layer-structured transition metal dichalcogenides (TMDs) is required for diverse optoelectronic device applications. Here, the spontaneous inversion of exciton state population in monolayer MoS₂ is observed by turning the pump light power. The excitons prefer to exist in low energy state under low pump power, but reverse under high pump power. To discuss the mechanism in depth, we propose a semiclassical model by combining the rate equation and photo-exciton interaction. Considering the modifying of exciton-exciton annihilation, the spontaneous inversion of exciton state population is phenomenologically described.

Engineering the Crack Structure and Fracture Behavior in Monolayer MoS2 By Selective Creation of Point Defects

Monolayer transition-metal dichalcogenides, e.g., MoS₂ , typically have high intrinsic strength and Young's modulus, but low fracture toughness. Under high stress, brittle fracture occurs followed by cleavage along a preferential lattice direction, leading to catastrophic failure. Defects have been reported to modulate the fracture behavior, but pertinent atomic mechanism still remains elusive. Here, sulfur (S) and MoS_n point defects are selectively created in monolayer MoS₂ using helium- and gallium-ion-beam lithography, both of which reduce the stiffness of the monolayer, but enhance its fracture toughness. By monitoring the atomic structure of the cracks before and after the loading fracture, distinct atomic structures of the cracks and fracture behaviors are found in the two types of defect-containing monolayer MoS₂ . Combined with molecular dynamics simulations, the key role of individual S and MoS_n point defects is identified in the fracture process and the origin of the enhanced fracture toughness is elucidated. It is a synergistic effect of defect-induced deflection and bifurcation of cracks that enhance the energy release rate, and the formation of widen crack tip when fusing with point defects that prevents the crack propagation. The findings of this study provide insights into defect engineering and flexible device applications of monolayer MoS₂ .

Multiwavelength Optoelectronic Synapse with 2D Materials for Mixed-Color Pattern Recognition

Neuromorphic visual systems emulating biological retina functionalities have enormous potential for in-sensor computing, with prospects of making artificial intelligence ubiquitous. Conventionally, visual information is captured by an image sensor, stored by memory units, and eventually processed by the machine learning algorithm. Here, we present an optoelectronic synapse device with multifunctional integration of all the processes required for real time object identification. Ultraviolet-visible wavelength-sensitive MoS₂ FET channel with infrared sensitive PtTe₂/Si gate electrode enables the device to sense, store, and process optical data for a wide range of the electromagnetic spectrum, while maintaining a low dark current. The device exhibits optical stimulation-controlled short-term and long-term potentiation, electrically driven long-term depression, synaptic weight update for multiple wavelengths of light ranging from 300 nm in ultraviolet to 2 μm in infrared. An artificial neural network developed using the extracted weight update parameters of the device can be trained to identify both single wavelength and mixed wavelength patterns. This work demonstrates a device that could potentially be used for realizing a multiwavelength neuromorphic visual system for pattern recognition and object identification.

Resonance Photoluminescence Enhancement of Monolayer MoS2 via a Plasmonic Nanowire Dimer Optical Antenna

Two-dimensional transition-metal dichalcogenides (TMDs) such as monolayer MoS2 exhibit remarkable optical properties. However, the intrinsic absorption and emission rates of MoS2 are very low, thus severely hindering its application in electronics and photonics. Combining MoS2 with a plasmonic optical antenna is an alternative solution to enhance the emission rates of the 2D semiconductor, and this can drastically increase the photoresponsivity of the corresponding photodetector. Herein, we have constructed a plasmonic gap cavity of a nanowire dimer (NWD) system as an optical antenna to brighten the emission of MoS2 off the hot spot. Different from the conventional enhancement concept which occurred in the plasmonic hot spot, the light emission off the nanogap hot spot was thoroughly investigated. We demonstrate that this new plasmonic optical nanostructure leads to a strong enhancement due to the Purcell effect. The NWD optical antenna can trap light to the near field through a high-efficiency plasmonic gap mode (PGM); then the PL emission was enhanced drastically up to 14.5-fold due to the resonance of the plasmonic gap mode (PGM) in the NWD with the excitonic band of monolayer MoS2. Theoretical simulations reveal that this NWD can alter the efficiency of convergence and excitation, which was consistent with our experimental results. This study can provide a pathway toward enhancing and controlling PGM-enhanced light emission of TMD materials beyond the plasmonic hot spot.

Broadband, Ultra-High-Responsive Monolayer MoS2/SnS2 Quantum-Dot-Based Mixed-Dimensional Photodetector

Atomically thin two-dimensional (2D) materials have gained significant attention from the research community in the fabrication of high-performance optoelectronic devices. Even though there are various techniques to improve the responsivity of the photodetector, the key factor limiting the performance of the photodetectors is constrained photodetection spectral range in the electromagnetic spectrum. In this work, a mixed-dimensional 0D/2D SnS₂-QDs/monolayer MoS₂ hybrid is fabricated for high-performance and broadband (UV-visible-near-infrared (NIR)) photodetector. Monolayer MoS₂ is deposited on SiO₂/Si using chemical vapor deposition (CVD), and SnS₂-QDs are prepared using a low-cost solution-processing method. The high performance of the fabricated 0D/2D photodetector is ascribed to the band bending and built-in potential created at the junction of SnS₂-QDs and MoS₂, which enhances the injection and separation efficiency of the photoexcited charge carriers. The mixed-dimensional structure also suppresses the dark current of the photodetector. The decorated SnS₂-QDs on monolayer MoS₂ not only improve the performance of the device but also extends the spectral range to the UV region. Photoresponsivity of the device for UV, visible, and NIR region is found to be ∼278, ∼ 435, and ∼189 A/W, respectively. Fabricated devices showed maximum responsivity under the visible region attributed to the high absorbance of monolayer MoS₂. The response time of the fabricated device is measured as ∼100 ms. These results reveal that the development of a mixed-dimensional (0D/2D) SnS₂-QDs/MoS₂-based high-performance and broadband photodetector is technologically promising for next-generation optoelectronic applications.

Improving the photoresponse performance of monolayer MoS2photodetector via local flexoelectric effect

Strain engineering is an effective means of modulating the optical and electrical properties of two-dimensional materials. The flexoelectric effect caused by inhomogeneous strain exists in most dielectric materials, which breaks the limit of the materials' non-centrosymmetric structure for piezoelectric effect. However, there is a lack of understanding of the impact on optoelectronic behaviour of monolayer MoS₂photodetector via local flexoelectric effect triggered by biaxial strain. In this paper, we develop a probe tip (Pt)-MoS₂-Au asymmetric Schottky barrier photodetector based on conductive atomic force microscopy to investigate the impact of flexoelectric effect on the photoresponse performance. Consequently, when the probe force increases from 24 nN to 720 nN, the photocurrent, responsivity and detectivity increase 28.5 times, 29.6 times and 5.3 times at forward bias under 365 nm light illumination, respectively. These results indicate that local flexoelectric effect plays a critical role to improve the photoresponse performance of photodetector. Our approach suggests a new route to improve the performance of photodetectors by introducing local flexoelectric polarization field, offering the potential for the application of strain modulated photoelectric devices.

Using Exciton/Trion Dynamics to Spatially Monitor the Catalytic Activities of MoS2 during the Hydrogen Evolution Reaction

The adsorption and desorption of electrolyte ions strongly modulates the carrier density or carrier type on the surface of monolayer-MoS₂ catalyst during the hydrogen evolution reaction (HER). The buildup of electrolyte ions onto the surface of monolayer MoS₂ during the HER may also result in the formation of excitons and trions, similar to those observed in gate-controlled field-effect transistor devices. Using the distinct carrier relaxation dynamics of excitons and trions of monolayer MoS₂ as sensitive descriptors, an in situ microcell-based scanning time-resolved liquid cell microscope is set up to simultaneously measure the bias-dependent exciton/trion dynamics and spatially map the catalytic activity of monolayer MoS₂ during the HER. This operando probing technique used to monitor the interplay between exciton/trion dynamics and electrocatalytic activity for two-dimensional transition metal dichalcogenides provides an excellent platform to investigate the local carrier behaviors at the atomic layer/liquid electrolyte interfaces during electrocatalytic reaction.

Ultrafast carrier dynamics in a monolayer MoS2at carrier densities well above Mott density

Due to the growing interest in monolayer (ML) molybdenum disulfide (MoS₂) in several optoelectronic applications like lasers, detectors, sensors, it is important to understand the ultrafast behavior of the excited carriers in this material. In this article, a comprehensive study of the charge carrier dynamics of a monolayer MoS₂flake has been studied using transient transmission technique near A-exciton under high excitation densities well above the Mott density. Fluence dependent studies has been carried out to understand the origin of the processes which modifies its optical response under excitation. The dissociation of excitons leads to an observed fast bandgap renormalization. At later times when large number of carriers relax the remaining carriers forms excitons leading to a bleaching effect.

High-responsivity photodetector based on scrolling monolayer MoS2hybridized with carbon quantum dots

The monolayer MoS₂based photodetectors have been widely investigated, which show limited photoelectric performances due to its low light absorption and uncontrollable adsorbates. In this paper, we present a MoS₂-based hybrid nanoscrolls device, in which one-dimensional nanoscrollsof MoS₂is hybridized with carbon quantum dots (CQDs). This device architecture effectively enhanced the photodetection performance. The photoresponsivity and detectivity values of MoS₂/CQDs-NS photodetectors are respectively 1793 A W^-1and 5.97 × 10¹²Jones, which are 830-fold and 268-fold higher than those of pristine MoS₂under 300 nm illumination atV_ds = 5 V. This research indicates a significant progress in fabricating high-performance MoS₂photodetectors.

CVD Synthesis of Intermediate State-Free, Large-Area and Continuous MoS2 via Single-Step Vapor-Phase Sulfurization of MoO2 Precursor

The low evaporation temperature and carcinogen classification of commonly used molybdenum trioxide (MoO3) precursor render it unsuitable for the safe and practical synthesis of molybdenum disulfide (MoS2). Furthermore, as evidenced by several experimental findings, the associated reaction constitutes a multistep process prone to the formation of uncontrolled amounts of intermediate MoS2-yOy phase mixed with the MoS2 crystals. Here, molybdenum dioxide (MoO2), a chemically more stable and safer oxide than MoO3, was utilized to successfully grow cm-scale continuous films of monolayer MoS2. A high-resolution optical image stitching approach and Raman line mapping were used to confirm the composition and homogeneity of the material grown across the substrate. A detailed examination of the surface morphology of the continuous film revealed that, as the gas flow rate increased by an order of magnitude, the grain-boundary separation dramatically reduced, implying a transition from a kinetically to thermodynamically controlled growth. Importantly, the single-step vapor-phase sulfurization (VPS) reaction of MoO2 was shown to suppress intermediate state formations for a wide range of experimental parameters investigated and is completely absent, provided that the global S:Mo loading ratio is set higher than the stoichiometric ratio of 3:1 required by the VPS reaction.

Bandgap Engineering and Near-Infrared-II Optical Properties of Monolayer MoS2: A First-Principle Study

The fluorescence-based optical imaging in the second near-infrared region (NIR-II, 1,000-1,700 nm) has broad applications in the biomedical field, but it is still difficult to find new NIR-II fluorescence materials in the two dimension. As a crucial characteristic of the electronic structure, the band structure determines the fundamental properties of two-dimensional materials, such as their optical excitations and electronic transportation. Therefore, we calculated the electronic structures and optical properties of different crystalline phases (1T phase and 2H phase) of pure monolayer MoS2 films and found that the 1T phase has better absorption and thus better fluorescence in the NIR-II window. However, its poor stability makes the 1T-phase MoS2 less useful in vivo bioimaging. By introducing vacancy defects and doping with foreign atoms, we successfully tuned the bandgap of the monolayer 2H-MoS2 and activated it in the NIR-II. Our results show that by engineering the vacancy defects, the bandgap of the 2H phase can be tailored to around 1 eV, and there are three candidates of vacancy structures that exhibit strong absorption in the NIR-II.

Formaldehyde Molecules Adsorption on Zn Doped Monolayer MoS2: A First-Principles Calculation

Based on the first principles of density functional theory, the adsorption behavior of H2CO on original monolayer MoS2 and Zn doped monolayer MoS2 was studied. The results show that the adsorption of H2CO on the original monolayer MoS2 is very weak, and the electronic structure of the substrate changes little after adsorption. A new kind of surface single cluster catalyst was formed after Zn doped monolayer MoS2, where the ZnMo3 small clusters made the surface have high selectivity. The adsorption behavior of H2CO on Zn doped monolayer MoS2 can be divided into two situations. When the H-end of H2CO molecule in the adsorption structure is downward, the adsorption energy is only 0.11 and 0.15 eV and the electronic structure of adsorbed substrate changes smaller. When the O-end of H2CO molecule is downward, the interaction between H2CO and the doped MoS2 is strong leading to the chemical adsorption with the adsorption energy of 0.80 and 0.98 eV. For the O-end-down structure, the adsorption obviously introduces new impurity states into the band gap or results in the redistribution of the original impurity states. All of these may lead to the change of the chemical properties of the doped MoS2 monolayer, which can be used to detect the adsorbed H2CO molecules. The results show that the introduction of appropriate dopant may be a feasible method to improve the performance of MoS2 gas sensor.

Pd Nanocluster/Monolayer MoS2 Heterojunctions for Light-Induced Room-Temperature Hydrogen Sensing

Developing sensing approaches that can exploit visible light for the detection of low-concentration hydrogen at room temperatures has become increasingly important for the safe use of hydrogen in many applications. In this study, heterostructures composed of monolayer MoS₂ and Pd nanoclusters (Pd/MoS₂) acting as photo- and hydrogen-sensitizers are successfully fabricated in a facile and scalable manner. The uniform deposition of morphologically isotropic Pd nanoclusters (11.5 ± 2.2 nm) on monolayer MoS₂ produces a plethora of active heterojunctions, effectively suppressing charge carrier recombination under light illumination. The dual photo- and hydrogen-sensitizing functionality of Pd/MoS₂ can enable its use as an active sensing layer in optoelectronic hydrogen sensors. Gas-sensing examinations reveal that the sensing performance of Pd/MoS₂ is enhanced three-fold under visible light illumination (17% for 140 ppm of H₂) in comparison with dark light (5% for 140 ppm of H₂). Photoactivation is also found to enable excellent sensing reversibility and reproducibility in the obtained sensor. As a proof-of-concept, the integration of Pd nanoclusters and monolayer MoS₂ can open a new avenue for light-induced hydrogen gas sensing at room temperature.

Enhanced Electrical Performance of Monolayer MoS2 with Rare Earth Element Sm Doping

Rare earth (RE) element-doped two-dimensional (2D) transition metal dichalcogenides (TMDCs) with applications in luminescence and magnetics have received considerable attention in recent years. To date, the effect of RE element doping on the electronic properties of monolayer 2D-TMDCs remains unanswered due to challenges including the difficulty of achieving valid monolayer doping and introducing RE elements with distinct valence and atomic configurations. Herein, we report a unique strategy to grow the Sm-doped monolayer MoS₂ film by using an atmospheric pressure chemical vapor deposition method with the substrate face down on top of the growth source. A stable monolayer triangular Sm-doped MoS₂ was achieved. The threshold voltage of an Sm-doped MoS₂-based field effect transistor (FET) moved from -12 to 0 V due to the p-type character impurity state introduced by Sm ions in monolayer MoS₂. Additionally, the electrical performance of the monolayer MoS₂-based FET was improved by RE element Sm doping, including a 500% increase of the on/off current ratio and a 40% increase of the FET's mobility. The electronic property enhancement resulted from Sm doping MoS₂, which led internal lattice strain and changes in Fermi energy levels. These findings provide a general approach to synthesize RE element-doped monolayer 2D-TMDCs and to enrich their applications in electrical devices.

Adsorption of atomic hydrogen on monolayer MoS2

The adsorption of atomic hydrogen on monolayer MoS₂has been intensively studied, but the ground-state adsorption configuration remains controversial. In this study, we investigate the adsorption properties of atomic hydrogen on monolayer MoS₂systematically using first-principles density functional theory calculations. We considered all the previously proposed adsorption sites, S-top, bridge, and hollow sites. Among them, S-top is the most energetically preferred, with a tilted S-H bond. Its calculated adsorption energy is -0.72 eV. The next lowest-energy configuration is that the H atom is located at the hollow site; the adsorption energy is slightly higher than the former, by 0.22 eV. The tilting of the S-H bond contributes to the adsorption energy up to -0.29 eV, a factor unrecognized in previous first-principles studies. These results account for the discrepancy in theory. Besides, the effects of spin-polarization also change the relative energetics of possible adsorption configurations.

Many-particle induced band renormalization processes in few- and mono-layer MoS2

Band renormalization effects play a significant role for two-dimensional (2D) materials in designing a device structure and customizing their optoelectronic performance. However, the intrinsic physical mechanism about the influence of these effects cannot be revealed by general steady-state studies. Here, band renormalization effects in organic superacid treated monolayer MoS₂, untreated monolayer MoS₂and few-layer MoS₂are quantitatively analyzed by using broadband femtosecond transient absorption spectroscopy. In comparison with the untreated monolayer, organic superacid treated monolayer MoS₂maintains a direct bandgap structure with two thirds of carriers populated at K valley, even when the initial exciton density is as high as 2.05 × 10¹⁴cm^-2(under 400 nm excitations). While for untreated monolayer and few-layer MoS₂, many-particle induced band renormalizations lead to a stronger imbalance for the carrier population between K and Q valleys inkspace, and the former experiences a direct-to-indirect bandgap transition when the initial exciton density exceeds 5.0 × 10¹³cm^-2(under 400 nm excitations). Those many-particle induced band renormalization processes further suggest a band-structure-controlling method in practical 2D devices.

Plasmonic Hybrids of MoS2 and 10-nm Nanogap Arrays for Photoluminescence Enhancement

Monolayer MoS₂ has attracted tremendous interest, in recent years, due to its novel physical properties and applications in optoelectronic and photonic devices. However, the nature of the atomic-thin thickness of monolayer MoS₂ limits its optical absorption and emission, thereby hindering its optoelectronic applications. Hybridizing MoS₂ by plasmonic nanostructures is a critical route to enhance its photoluminescence. In this work, the hybrid nanostructure has been proposed by transferring the monolayer MoS₂ onto the surface of 10-nm-wide gold nanogap arrays fabricated using the shadow deposition method. By taking advantage of the localized surface plasmon resonance arising in the nanogaps, a photoluminescence enhancement of ~20-fold was achieved through adjusting the length of nanogaps. Our results demonstrate the feasibility of a giant photoluminescence enhancement for this hybrid of MoS₂/10-nm nanogap arrays, promising its further applications in photodetectors, sensors, and emitters.

Highly Enhanced Gas Sensing Performance Using a 1T/2H Heterophase MoS2 Field-Effect Transistor at Room Temperature

Monolayer MoS₂ (ML-MoS₂) with various polymorphic phases attracts growing interests for device applications in recent years. Herein, a field-effect transistor (FET) gas sensor is developed on the basis of monolayer MoS₂ with a heterophase of a 1T metallic phase and a 2H semiconducting phase. Lithium-exfoliated MoS₂ nanosheets own a monolayer structure with rich active sites for gas adsorption. With thermal annealing from 50 to 300 °C, the initial lithium-exfoliated 1T-phase MoS₂ gradually transforms into the 2H phase, during which the 1T and 2H heterophases can be modulated. The 1T/2H heterophase MoS₂ shows p-type semiconducting properties and prominent adsorption capability for NO₂ molecules. The highest response is observed for 100 °C annealed MoS₂ of a 40% 1T phase and a 60% 2H phase, which shows a sensitivity up to 25% toward 2 ppm NO₂ at room temperature in a very short time (10 s) and a lower limit of detection down to 25 ppb. This study demonstrates that the gas detection capability of ML-MoS₂ could be boosted with the heterophase construction, which brings new insights into transition-metal dichalcogenide gas sensors.

Effect of Adventitious Carbon on Pit Formation of Monolayer MoS2

Forming pits on molybdenum disulfide (MoS₂ ) monolayers is desirable for (opto)electrical, catalytic, and biological applications. Thermal oxidation is a potentially scalable method to generate pits on monolayer MoS₂ , and pits are assumed to preferentially form around undercoordinated sites, such as sulfur vacancies. However, studies on thermal oxidation of MoS₂ monolayers have not considered the effect of adventitious carbon (C) that is ubiquitous and interacts with oxygen at elevated temperatures. Herein, the effect of adventitious C on the pit formation on MoS₂ monolayers during thermal oxidation is studied. The in situ environmental transmission electron microscopy measurements herein show that pit formation is preferentially initiated at the interface between adventitious C nanoparticles and MoS₂ , rather than only sulfur vacancies. Density functional theory (DFT) calculations reveal that the C/MoS₂ interface favors the sequential adsorption of oxygen atoms with facile kinetics. These results illustrate the important role of adventitious C on pit formation on monolayer MoS₂ .

Experimental Study on Thermal Conductivity and Rectification in Suspended Monolayer MoS2

Thermal rectification is an attractive phenomenon for thermal management, which refers to a specific behavior in a heat transfer system where heat flow in one direction is stronger than that in the opposite direction under the same conditions. Two-dimensional monolayer molybdenum disulfide (MoS₂) synthesized by chemical vapor deposition (CVD) has exhibited exceptional thermal, optical, and electrical properties due to its special structure; however, the thermal rectification in monolayer MoS₂ is still not achieved by experimental measurement. Here, we successfully transferred monolayer MoS₂ samples with three geometrical morphologies to the suspended microelectrodes by the PMMA approach. Through further heating the suspended microelectrodes with AC power in the opposite directions of these three monolayer MoS₂ samples, we experimentally measured the thermal conductivity and first obtained the thermal rectification of monolayer MoS₂. The rectification coefficients of monolayer MoS₂ with three different geometrical morphologies are 10-13, 11-4, and 69-70%. Moreover, a theoretical model was also applied to discuss the dependence of thermal rectification on the geometrical asymmetry (angle and spacing). The results demonstrate that the monolayer MoS₂ has an obvious thermal rectification phenomenon owing to the asymmetric structure, and it would have great potentials in the application of thermal energy control and management.

Ultrafast electron dynamics in monolayer MoS2interacting with optical pulse influenced by exchange field and waveform

In this paper, we investigate the effect of waveform and carrier-envelope phase on the electron dynamics in monolayer MoS2interacting with an ultrashort (few-femtosecond) optical pulse in the presence of magnetic exchange field. The waveform of the zero area pulse is characterized by Hermite-Gaussian polynomials associated with time-dependent and carrier-envelope phases. Because the duration of optical pulse is less than the characteristic electron scattering time (10-100 fs), the electron dynamics is coherent, and can be described by the time-dependent Schrödinger equation. We show, that the electron transition from valence band to conduction band is a deeply irreversible dynamics, which implies quantum electron dynamics is highly nonadiabatic. We study the effect of carrier-envelope phase and exchange field on the conduction band population for two types of waveform. Electron distribution in reciprocal space gives asymmetric hot spots in differentKandK' valleys after the pulse ends (valley polarization effect), which is found to be more sensitive to carrier-envelope phase. The predicted effect provides new opportunities for the improvement of information processing in the petahertz domain and optoelectronics applications.

Enhanced Carrier-Exciton Interactions in Monolayer MoS2 under Applied Voltages

Carrier-exciton interactions in two-dimensional transition metal dichalcogenides (TMDs) is one of the crucial elements for limiting the performance of their optoelectronic devices. Here, we have experimentally studied the carrier-exciton interactions in a monolayer MoS₂-based two-terminal device. Such two-terminal device without a gate electrode is generally considered as invalid to modulate the carrier concentration in active materials, while the photoluminescence peak exhibits a red shift and decay with increasing applied voltages. Time-resolved photoluminescence spectroscopy and photoluminescence multipeak fittings verify that such changes of photoluminescence peaks result from enhanced carrier-exciton interactions with increasing electron concentration induce the charged exciton increasing. To characterize the level of the carrier-exciton interactions, a quantitative relationship between the Raman shift of out-of-plane mode and changes in electron concentration has been established using the mass action model. This work provides an appropriate supplement for understanding the carrier-exciton interactions in TMD-based two-terminal optoelectronic devices.

Effect of Compressive Prestrain on the Anti-Pressure and Anti-Wear Performance of Monolayer MoS2: A Molecular Dynamics Study

The effects of in-plane prestrain on the anti-pressure and anti-wear performance of monolayer MoS₂ have been investigated by molecular dynamics simulation. The results show that monolayer MoS₂ observably improves the load bearing capacity of Pt substrate. The friction reduction effect depends on the deformation degree of monolayer MoS₂. The anti-pressure performance of monolayer MoS₂ and Pt substrate is enhanced by around 55.02% when compressive prestrain increases by 4.03% and the anti-wear performance is notably improved as well. The improved capacities for resisting the in-plane tensile and out-of-plane compressive deformation are responsible for the outstanding lubrication mechanism of monolayer MoS₂. This study provides guidelines for optimizing the anti-pressure and anti-wear performance of MoS₂ and other two-dimension materials which are subjected to the in-plane prestrain.

Tunable Broadband Solar Energy Absorber Based on Monolayer Transition Metal Dichalcogenides Materials Using Au Nanocubes

In order to significantly enhance the absorption capability of solar energy absorbers in the visible wavelength region, a novel monolayer molybdenum disulfide (MoS₂)-based nanostructure was proposed. Local surface plasmon resonances (LSPRs) supported by Au nanocubes (NCs) can improve the absorption of monolayer MoS₂. A theoretical simulation by a finite-difference time-domain method (FDTD) shows that the absorptions of proposed MoS₂-based absorbers are above 94.0% and 99.7% at the resonant wavelengths of 422 and 545 nm, respectively. In addition, the optical properties of the proposed nanostructure can be tuned by the geometric parameters of the periodic Au nanocubes array, distributed Bragg mirror (DBR) and polarization angle of the incident light, which are of great pragmatic significance for improving the absorption efficiency and selectivity of monolayer MoS₂. The absorber is also able to withstand a wide range of incident angles, showing polarization-independence. Similar design ideas can also be implemented to other transition-metal dichalcogenides (TMDCs) to strengthen the interaction between light and MoS₂. This nanostructure is relatively simple to implement and has a potentially important application value in the development of high-efficiency solar energy absorbers and other optoelectronic devices.

Defect-Engineered Atomically Thin MoS2 Homogeneous Electronics for Logic Inverters

Ultrathin molybdenum disulfide (MoS₂ ) presents ideal properties for building next-generation atomically thin circuitry. However, it is difficult to construct logic units of MoS₂ monolayer using traditional silicon-based doping schemes, such as atomic substitution and ion implantation, as they cause lattice disruption and doping instability. An accurate and feasible electronic structure modulation strategy from defect engineering is proposed to construct homogeneous electronics for MoS₂ monolayer logic inverters. By utilizing the energy-matched electron induction of the solution process, numerous pure and lattice-stable monosulfur vacancies (V_monos ) are introduced to modulate the electronic structure of monolayer MoS₂ via a shallow trapping effect. The resulting modulation effectively reduces the electronic concentration of MoS₂ and improves the work function by 100 meV. Under modulation of V_monos , an atomically thin homogenous monolayer MoS₂ logic inverter with a voltage gain of 4 is successfully constructed. A brand-new and practical design route of defect modulation for 2D-based circuit development is provided.

Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

The two-dimensional materials can be used as the channel material of transistor, which can further decrease the size of transistor. In this paper, the molybdenum disulfide (MoS₂) is grown on the SiO₂/Si substrate by atmospheric pressure chemical vapor deposition (APCVD), and the MoS₂ is systematically characterized by the high-resolution optical microscopy, Raman spectroscopy, photoluminescence spectroscopy, and the field emission scanning electron microscopy, which can confirm that the MoS₂ is a monolayer. Then, the monolayer MoS₂ is selected as the channel material to complete the fabrication process of the back-gate field effect transistor (FET). Finally, the electrical characteristics of the monolayer MoS₂-based FET are tested to obtain the electrical performance. The switching ratio is 10³, the field effect mobility is about 0.86 cm²/Vs, the saturation current is 2.75 × 10^-7 A/μm, and the lowest gate leakage current is 10^-12 A. Besides, the monolayer MoS₂ can form the ohmic contact with the Ti/Au metal electrode. Therefore, the electrical performances of monolayer MoS₂-based FET are relatively poor, which requires the further optimization of the monolayer MoS₂ growth process. Meanwhile, it can provide the guidance for the application of monolayer MoS₂-based FETs in the future low-power optoelectronic integrated circuits.

A Critical Review on Enhancement of Photocatalytic Hydrogen Production by Molybdenum Disulfide: From Growth to Interfacial Activities

Ultrathin 2D molybdenum disulfide (MoS₂ ), which is the flagship of 2D transition-metal dichalcogenide nanomaterials, has drawn much attention in the last few years. 2D MoS₂ has been banked as an alternative to platinum for highly active hydrogen evolution reaction because of its low cost, high surface-to-volume ratio, and abundant active sites. However, when MoS₂ is used directly as a photocatalyst, contrary to public expectation, it still performs poorly due to lateral size, high recombination ratio of excitons, and low optical cross section. Besides, simply compositing MoS₂ as a cocatalyst with other semiconductors cannot satisfy the practical application, which stimulates the pursual of a comprehensive insight into recent advances in synthesis, properties, and enhanced hydrogen production of MoS₂ . Therefore, in this Review, emphasis is given to synthetic methods, phase transitions, tunable optical properties, and interfacial engineering of 2D MoS₂ . Abundant ways of band edge tuning, structural modification, and phase transition are addressed, which can generate the neoteric photocatalytic systems. Finally, the main challenges and opportunities with respect to MoS₂ being a cocatalyst and coherent light-matter interaction of MoS₂ in photocatalytic systems are proposed.

Progress in Electrocatalytic Hydrogen Evolution Based on Monolayer Molybdenum Disulfide

Energy and environmental issues raise higher demands on the development of a sustainable energy system, and the electrocatalytic hydrogen evolution is one of the most important ways to realize this goal. Two-dimensional (2D) materials represented by molybdenum disulfide (MoS2) have been widely investigated as an efficient electrocatalyst for the hydrogen evolution. However, there are still some shortcomings to restrict the efficiency of MoS2 electrocatalyst, such as the limited numbers of active sites, lower intrinsic catalytic activity and poor interlayer conductivity. In this review, the application of monolayer MoS2 and its composites with 0D, 1D, and 2D nanomaterials in the electrocatalytic hydrogen evolution were discussed. On the basis of optimizing the composition and structure, the numbers of active sites, intrinsic catalytic activity, and interlayer conductivity could be significantly enhanced. In the future, the study would focus on the structure, active site, and interface characteristics, as well as the structure-activity relationship and synergetic effect. Then, the enhanced electrocatalytic activity of monolayer MoS2 can be achieved at the macro, nano and atomic levels, respectively. This review provides a new idea for the structural design of two-dimensional electrocatalytic materials. Meanwhile, it is of great significance to promote the study of the structure-activity relationship and mechanism in catalytic reactions.

Probing the Growth Improvement of Large-Size High Quality Monolayer MoS₂ by APCVD

Two-dimensional transition metal dichalcogenides (TMDs) have attracted attention from researchers in recent years. Monolayer molybdenum disulfide (MoS₂) is the direct band gap two-dimensional crystal with excellent physical and electrical properties. Monolayer MoS₂ can effectively compensate for the lack of band gap of graphene in the field of nano-electronic devices, which is widely used in catalysis, transistors, optoelectronic devices, and integrated circuits. Therefore, it is critical to obtain high-quality, large size monolayer MoS₂. The large-area uniform high-quality monolayer MoS₂ is successfully grown on an SiO₂/Si substrate with oxygen plasma treatment and graphene quantum dot solution by atmospheric pressure chemical vapor deposition (APCVD) in this paper. In addition, the effects of substrate processing conditions, such as oxygen plasma treatment time, power, and dosage of graphene quantum dot solution on growth quality and the area of the monolayer of MoS₂, are studied systematically, which would contribute to the preparation of large-area high-quality monolayer MoS₂. Analysis and characterization of monolayer MoS₂ are carried out by Optical Microscopy, AFM, XPS, Raman, and Photoluminescence Spectroscopy. The results show that monolayer MoS₂ is a large-area, uniform, and triangular with a side length of 200 μm, and it is very effective to treat the SiO₂/Si substrate by oxygen plasma and graphene quantum dot solution, which would help the fabrication of optoelectronic devices.

Additive manufacturing of patterned 2D semiconductor through recyclable masked growth

The 2D van der Waals crystals have shown great promise as potential future electronic materials due to their atomically thin and smooth nature, highly tailorable electronic structure, and mass production compatibility through chemical synthesis. Electronic devices, such as field effect transistors (FETs), from these materials require patterning and fabrication into desired structures. Specifically, the scale up and future development of "2D"-based electronics will inevitably require large numbers of fabrication steps in the patterning of 2D semiconductors, such as transition metal dichalcogenides (TMDs). This is currently carried out via multiple steps of lithography, etching, and transfer. As 2D devices become more complex (e.g., numerous 2D materials, more layers, specific shapes, etc.), the patterning steps can become economically costly and time consuming. Here, we developed a method to directly synthesize a 2D semiconductor, monolayer molybdenum disulfide (MoS2), in arbitrary patterns on insulating SiO2/Si via seed-promoted chemical vapor deposition (CVD) and substrate engineering. This method shows the potential of using the prepatterned substrates as a master template for the repeated growth of monolayer MoS2 patterns. Our technique currently produces arbitrary monolayer MoS2 patterns at a spatial resolution of 2 μm with excellent homogeneity and transistor performance (room temperature electron mobility of 30 cm2 V-1 s-1 and on-off current ratio of 107). Extending this patterning method to other 2D materials can provide a facile method for the repeatable direct synthesis of 2D materials for future electronics and optoelectronics.

Research on the Factors Affecting the Growth of Large-Size Monolayer MoS₂ by APCVD

The transition-metal chalcogenides (TMDs) are gaining increased attention from many scientists recently. Monolayer MoS₂ is an emerging layered TMD material with many excellent physical and electrical properties. It can be widely used in catalysis, transistors, optoelectronics and integrated circuits. Here, the large-sized monolayer MoS₂ is grown on the silicon substrate with a 285-nm-thick oxide layer by atmospheric pressure chemical vapor deposition (APCVD) of sulfurized molybdenum trioxide. This method is simple and it does not require vacuum treatment. In addition, the effects of growth conditions, such as sulfur source, molybdenum source, growth temperature, and argon flow rate on the quality and area of MoS₂ are further studied systematically. These analysis results help to master the morphology and optical properties of monolayer MoS₂. The high quality, excellent performance, and large-size monolayer MoS₂ under the optimal growth condition is characterized by optical microscopy, AFM, XPS, photoluminescence, and Raman spectroscopy. The Raman spectrum and PL mapping show that the grown MoS₂ is a uniform triangular monolayer with a side length of 100 μm, which can pave the way for the applications of photodetectors and transistors.

Interface Engineering of Monolayer MoS2/GaN Hybrid Heterostructure: Modified Band Alignment for Photocatalytic Water Splitting Application by Nitridation Treatment

Interface engineering is a key strategy to deal with the two-dimensional (2D)/three-dimensional (3D) hybrid heterostructure, since the properties of this atomic-layer-thick 2D material can easily be impacted by the substrate environment. In this work, the structural, electronic, and optical properties of the 2D/3D heterostructure of monolayer MoS₂ on wurtzite GaN surface without and with nitridation interfacial layer are systematically investigated by first-principles calculation and experimental analysis. The nitridation interfacial layer can be introduced into the 2D/3D heterostructure by remote N₂ plasma treatment to GaN sample surface prior to stacking monolayer MoS₂ on top. The calculation results reveal that the 2D/3D integrated heterostructure is energetically favorable with a negative formation energy. Both interfaces demonstrate indirect band gap, which is a benefit for longer lifetime of the photoexcited carriers. Meanwhile, the conduction band edge and valence band edge of the MoS₂ side increases after nitridation treatment. The modification to band alignment is then verified by X-ray photoelectron spectroscopy measurement on MoS₂/GaN heterostructures constructed by a modified wet-transfer technique, which indicates that the MoS₂/GaN heterostructure without nitridation shows a type-II alignment with a conduction band offset (CBO) of only 0.07 eV. However, by the deployment of interface nitridation, the band edges of MoS₂ move upward for ∼0.5 eV as a result of the nitridized substrate property. The significantly increased CBO could lead to better electron accumulation capability at the GaN side. The nitridized 2D/3D heterostructure with effective interface treatment exhibits a clean band gap and substantial optical absorption ability and could be potentially used as practical photocatalyst for hydrogen generation by water splitting using solar energy.

Photonic Potentiation and Electric Habituation in Ultrathin Memristive Synapses Based on Monolayer MoS2

Monolayer of 2D transition metal dichalcogenides, with a thickness of less than 1 nm, paves a feasible path to the development of ultrathin memristive synapses, to fulfill the requirements for constructing large-scale high density 3D stacking neuromorphic chips. Herein, memristive devices based on monolayer n-MoS₂ on p-Si substrate with a large self-rectification ratio, exhibiting photonic potentiation and electric habituation, are successfully fabricated. Versatile synaptic neuromorphic functions, such as potentiation/habituation, short-term/long-term plasticity, and paired-pulse facilitation, are successfully mimicked based on the inherent persistent photoconductivity performance and the volatile resistive switching behavior. These findings demonstrate the potential applications of ultrathin transition metal dichalcogenides for memristive synapses. These memristive synapses with the combination of photonic and electric neuromorphic functions have prospective in the applications of synthetic retinas and optoelectronic interfaces for integrated photonic circuits based on mixed-mode electro-optical operation.

Piezotronic Effect Enhanced Flexible Humidity Sensing of Monolayer MoS2

We report the piezotronic effect on the performance of humidity detection based on a back-to-back Schottky contacted monolayer MoS₂ device. By introducing an upswept mechanical strain, the in-plane electrical polarization can be induced at the MoS₂/metal junction region. The polarization charges can modify the Schottky barrier height at the interface of MoS₂/metal junction, subsequently improving the sensitivity of the humidity sensing. An energy band diagram is proposed to explain the experiment phenomenon of the humidity sensor. This work provides a simple way to enhance the sensitivity of ultrathin two-dimensional-materials-based sensors by the piezotronic effect, which has great potential applications in electronic skin, human-computer interfacing, gas sensing, and environment monitoring.

First-Principles Study on the Structural and Electronic Properties of Monolayer MoS₂ with S-Vacancy under Uniaxial Tensile Strain

Monolayer molybdenum disulfide (MoS₂) has obtained much attention recently and is expected to be widely used in flexible electronic devices. Due to inevitable bending in flexible electronic devices, the structural and electronic properties would be influenced by tensile strains. Based on the density functional theory (DFT), the structural and electronic properties of monolayer MoS₂ with a sulfur (S)-vacancy is investigated by using first-principles calculations under uniaxial tensile strain loading. According to the calculations of vacancy formation energy, two types of S-vacancies, including one-sulfur and two-sulfur vacancies, are discussed in this paper. Structural analysis results indicate that the existence of S-vacancies will lead to a slightly inward relaxation of the structure, which is also verified by exploring the change of charge density of the Mo layer and the decrease of Young’s modulus, as well as the ultimate strength of monolayer MoS₂. Through uniaxial tensile strain loading, the simulation results show that the band gap of monolayer MoS₂ decreases with increased strain despite the sulfur vacancy type and the uniaxial tensile orientation. Based on the electronic analysis, the band gap change can be attributed to the π bond-like interaction between the interlayers, which is very sensitive to the tensile strain. In addition, the strain-induced density of states (DOS) of the Mo-d orbital and the S-p orbital are analyzed to explain the strain effect on the band gap.

Controlled Gas Molecules Doping of Monolayer MoS2 via Atomic-Layer-Deposited Al2O3 Films

MoS₂ as atomically thin semiconductor is highly sensitive to ambient atmosphere (e.g., oxygen, moisture, etc.) in optical and electrical properties. Here we report a controlled gas molecules doping of monolayer MoS₂ via atomic-layer-deposited Al₂O₃ films. The deposited Al₂O₃ films, in the shape of nanospheres, can effectively control the contact areas between ambient atmosphere and MoS₂ that allows precise modulation of gas molecules doping. By analyzing photoluminescence (PL) emission spectra of MoS₂ with different thickness of Al₂O₃, the doped carrier concentration is estimated at ∼2.7 × 10¹³ cm^-2 based on the mass action model. Moreover, time-dependent PL measurements indicate an incremental stability of single layer MoS₂ as the thicknesses of Al₂O₃ capping layer increase. Effective control of gas molecules doping in monolayer MoS₂ provides us a valuable insight into the applications of MoS₂ based optical and electrical devices.

Enhanced Triboelectric Nanogenerators Based on MoS2 Monolayer Nanocomposites Acting as Electron-Acceptor Layers

As one of their major goals, researchers attempting to harvest mechanical energy efficiently have continuously sought ways to integrate mature technologies with cutting-edge designs to enhance the performances of triboelectric nanogenerators (TENGs). In this research, we introduced monolayer molybdenum-disulfide (MoS₂) into the friction layer of a TENG as the triboelectric electron-acceptor layer in an attempt to dramatically enhance its output performance. As a proof of the concept, we fabricated a vertical contact-separation mode TENG containing monolayer MoS₂ as an electron-acceptor layer and found that the TENG exhibited a peak power density as large as 25.7 W/m², which is 120 times larger than that of the device without monolayer MoS₂. The mechanisms behind the performance enhancement, which are related to the highly efficient capture of triboelectric electrons in monolayer MoS₂, are discussed in detail. This study indicates that monolayer MoS₂ can be used as a functional material for efficient energy harvesting.

Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes

Monolayer MoS₂, among many other transition metal dichalcogenides, holds great promise for future applications in nanoelectronics and optoelectronics due to its ultrathin nature, flexibility, sizable band gap, and unique spin-valley coupled physics. However, careful study of these properties at low temperature has been hindered by an inability to achieve low-temperature Ohmic contacts to monolayer MoS₂, particularly at low carrier densities. In this work, we report a new contact scheme that utilizes cobalt (Co) with a monolayer of hexagonal boron nitride (h-BN) that has the following two functions: modifies the work function of Co and acts as a tunneling barrier. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kΩ.μm at a carrier density of 5.3 × 10¹²/cm². This further allows us to observe Shubnikov-de Haas oscillations in monolayer MoS₂ at much lower carrier densities compared to previous work.