Magnetic Nanoplatelet-Based Spin Memory Device Operating at Ambient Temperatures

There is an increasing demand for realizing a simple Si based universal memory device working at ambient temperatures. In principle, nonvolatile magnetic memory can operate at low power consumption and high frequencies. However, in order to compete with existing memory technology, size reduction and simplification of the used material systems are essential. In this work, the chiral-induced spin selectivity effect is used along with 30-50 nm ferromagnetic nanoplatelets in order to realize a simple magnetic memory device. The vertical memory is Si compatible, easy to fabricate, and in principle can be scaled down to a single nanoparticle size. Results show clear dual magnetization behavior with threefold enhancement between the one and zero states. The magnetization of the device is accompanied with large avalanche like noise that is ascribed to the redistribution of current densities due to spin accumulation inducing coupling effects between the different nanoplatelets.

Observation of current-induced, long-lived persistent spin polarization in a topological insulator: A rechargeable spin battery

Topological insulators (TIs), with their helically spin-momentum-locked topological surface states (TSSs), are considered promising for spintronics applications. Several recent experiments in TIs have demonstrated a current-induced electronic spin polarization that may be used for all-electrical spin generation and injection. We report spin potentiometric measurements in TIs that have revealed a long-lived persistent electron spin polarization even at zero current. Unaffected by a small bias current and persisting for several days at low temperature, the spin polarization can be induced and reversed by a large "writing" current applied for an extended time. Although the exact mechanism responsible for the observed long-lived persistent spin polarization remains to be better understood, we speculate on possible roles played by nuclear spins hyperfine-coupled to TSS electrons and dynamically polarized by the spin-helical writing current. Such an electrically controlled persistent spin polarization with unprecedented long lifetime could enable a rechargeable spin battery and rewritable spin memory for potential applications in spintronics and quantum information.

Enhanced Magnetization of Cobalt Defect Clusters Embedded in TiO2-δ Films

High magnetizations are desirable for spintronic devices that operate by manipulating electronic states using built-in magnetic fields. However, the magnetic moment in promising dilute magnetic oxide nanocomposites is very low, typically corresponding to only fractions of a Bohr magneton for each dopant atom. In this study, we report a large magnetization formed by ion implantation of Co into amorphous TiO_2-δ films, producing an inhomogeneous magnetic moment, with certain regions producing over 2.5 μ_B per Co, depending on the local dopant concentration. Polarized neutron reflectometry was used to depth-profile the magnetization in the Co:TiO_2-δ nanocomposites, thus confirming the pivotal role of the cobalt dopant profile inside the titania layer. X-ray photoemission spectra demonstrate the dominant electronic state of the implanted species is Co⁰, with a minor fraction of Co²⁺. The detected magnetizations have seldom been reported before and lie near the upper limit set by Hund's rules for Co⁰, which is unusual because the transition metal's magnetic moment is usually reduced in a symmetric 3D crystal-field environment. Low-energy positron annihilation lifetime spectroscopy indicates that defect structures within the titania layer are strongly modified by the implanted Co. We propose that a clustering motif is promoted by the affinity of the positively charged implanted species to occupy microvoids native to the amorphous host. This provides a seed for subsequent doping and nucleation of nanoclusters within an unusual local environment.

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

Silicon carbide is a promising platform for single photon sources, quantum bits (qubits), and nanoscale sensors based on individual color centers. Toward this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400-1400 nm diameters. We obtain high collection efficiency of up to 22 kcounts/s optical saturation rates from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.

Optical Control of Spin Polarization in Monolayer Transition Metal Dichalcogenides

Optical excitation could generate electrons' spin polarization in some semiconductors with the control of the field polarization. In this article, we report a series of spin-resolved photocurrent experiments on monolayer tungsten disulfide. The experiments demonstrate that the optical excitations with the same helicity could generate opposite spin polarization around the Fermi level by tuning the excitation energy. The mechanism lies in the valley-dependent optical selection rules, the giant spin-orbit coupling, and spin-valley locking in monolayer transition metal dichalcogenides (TMDs). These exotic features make monolayer TMDs promising candidates for conceptual semiconductor-based spintronics.

Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes

We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlO _x spin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density (J) region, whereas it increases steeply and reaches close to the pure CP when J > 100 A/cm² There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent reabsorption, spin-induced birefringence, and optical spin-axis conversion are suggested to account for the observed experimental results.

High-Performance THz Emitters Based on Ferromagnetic/Nonmagnetic Heterostructures

A low-cost, intense, broadband, noise resistive, magnetic field controllable, flexible, and low power driven THz emitter based on thin nonmagnetic/ferromagnetic metallic heterostructures is demonstrated. The THz emission origins from the inverse spin Hall Effect. The proposed devices are not only promising for a wide range of THz equipment, but also offer an alternative approach to characterize the spin-orbit interaction in nonmagnetic/ferromagnetic bilayers.

Heteroepitaxy of Fe3O4/Muscovite: A New Perspective for Flexible Spintronics

Spintronics has captured a lot of attention since it was proposed. It has been triggering numerous research groups to make their efforts on pursuing spin-related electronic devices. Recently, flexible and wearable devices are in a high demand due to their outstanding potential in practical applications. In order to introduce spintronics into the realm of flexible devices, we demonstrate that it is feasible to grow epitaxial Fe₃O₄ film, a promising candidate for realizing spintronic devices based on tunneling magnetoresistance, on flexible muscovite. In this study, the heteroepitaxy of Fe₃O₄/muscovite is characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. The chemical composition and magnetic feature are investigated by a combination of X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. The electrical and magnetic properties are examined to show the preservation of the primitive properties of Fe₃O₄. Furthermore, various bending tests are performed to show the tunability of functionalities and to confirm that the heterostructures retain the physical properties under repeated cycles. These results illustrate that the Fe₃O₄/muscovite heterostructure can be a potential candidate for the applications in flexible spintronics.

Strong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayers

The electronic and optoelectronic properties of two-dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current-induced spin current and spin-orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS₂ or WSe₂)/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials.

Exchange Bias Effects in Iron Oxide-Based Nanoparticle Systems

The exploration of exchange bias (EB) on the nanoscale provides a novel approach to improving the anisotropic properties of magnetic nanoparticles for prospective applications in nanospintronics and nanomedicine. However, the physical origin of EB is not fully understood. Recent advances in chemical synthesis provide a unique opportunity to explore EB in a variety of iron oxide-based nanostructures ranging from core/shell to hollow and hybrid composite nanoparticles. Experimental and atomistic Monte Carlo studies have shed light on the roles of interface and surface spins in these nanosystems. This review paper aims to provide a thorough understanding of the EB and related phenomena in iron oxide-based nanoparticle systems, knowledge of which is essential to tune the anisotropic magnetic properties of exchange-coupled nanoparticle systems for potential applications.

Relay-Like Exchange Mechanism through a Spin Radical between TbPc2 Molecules and Graphene/Ni(111) Substrates

We investigate the electronic and magnetic properties of TbPc₂ single ion magnets adsorbed on a graphene/Ni(111) substrate, by density functional theory (DFT), ab initio complete active space self-consistent field calculations, and X-ray magnetic circular dichroism (XMCD) experiments. Despite the presence of the graphene decoupling layer, a sizable antiferromagnetic coupling between Tb and Ni is observed in the XMCD experiments. The molecule-surface interaction is rationalized by the DFT analysis and is found to follow a relay-like communication pathway, where the radical spin on the organic Pc ligands mediates the interaction between Tb ion and Ni substrate spins. A model Hamiltonian which explicitly takes into account the presence of the spin radical is then developed, and the different magnetic interactions at play are assessed by first-principle calculations and by comparing the calculated magnetization curves with XMCD data. The relay-like mechanism is at the heart of the process through which the spin information contained in the Tb ion is sensed and exploited in carbon-based molecular spintronics devices.

Spintronic Nanodevices for Bioinspired Computing

Bioinspired hardware holds the promise of low-energy, intelligent, and highly adaptable computing systems. Applications span from automatic classification for big data management, through unmanned vehicle control, to control for biomedical prosthesis. However, one of the major challenges of fabricating bioinspired hardware is building ultra-high-density networks out of complex processing units interlinked by tunable connections. Nanometer-scale devices exploiting spin electronics (or spintronics) can be a key technology in this context. In particular, magnetic tunnel junctions (MTJs) are well suited for this purpose because of their multiple tunable functionalities. One such functionality, non-volatile memory, can provide massive embedded memory in unconventional circuits, thus escaping the von-Neumann bottleneck arising when memory and processors are located separately. Other features of spintronic devices that could be beneficial for bioinspired computing include tunable fast nonlinear dynamics, controlled stochasticity, and the ability of single devices to change functions in different operating conditions. Large networks of interacting spintronic nanodevices can have their interactions tuned to induce complex dynamics such as synchronization, chaos, soliton diffusion, phase transitions, criticality, and convergence to multiple metastable states. A number of groups have recently proposed bioinspired architectures that include one or several types of spintronic nanodevices. In this paper, we show how spintronics can be used for bioinspired computing. We review the different approaches that have been proposed, the recent advances in this direction, and the challenges toward fully integrated spintronics complementary metal-oxide-semiconductor (CMOS) bioinspired hardware.

Proximity-Induced Spin Polarization of Graphene in Contact with Half-Metallic Manganite

The role of proximity contact with magnetic oxides is of particular interest from the expectations of the induced spin polarization and weak interactions at the graphene/magnetic oxide interfaces, which would allow us to achieve efficient spin-polarized injection in graphene-based spintronic devices. A combined approach of topmost-surface-sensitive spectroscopy utilizing spin-polarized metastable He atoms and ab initio calculations provides us direct evidence for the magnetic proximity effect in the junctions of single-layer graphene and half-metallic manganite La0.7Sr0.3MnO3 (LSMO). It is successfully demonstrated that in the graphene/LSMO junctions a sizable spin polarization is induced at the Fermi level of graphene in parallel to the spin polarization direction of LSMO without giving rise to a significant modification in the π band structure.

Toward Versatile Sr2FeMoO6-Based Spintronics by Exploiting Nanoscale Defects

To actualize the high spintronic application potential of complex magnetic oxides, it is essential to fabricate these materials as thin films with the best possible magnetic and electrical properties. Sr2FeMoO6 is an outstanding candidate for such applications, but presently no thin film synthesis route, which would preserve the magnetic properties of bulk Sr2FeMoO6, is currently known. In order to address this problem, we present a comprehensive experimental and theoretical study where we link the magnetic and half metallic properties of Sr2FeMoO6 thin films to lattice strain, Fe-Mo antisite disorder and oxygen vacancies. We find the intrinsic effect of strain on the magnetic properties to be very small, but also that an increased strain will significantly stabilize the Sr2FeMoO6 lattice against the formation of antisite disorder and oxygen vacancies. These defects, on the other hand, are recognized to drastically influence the magnetism of Sr2FeMoO6 in a nonlinear manner. On the basis of the findings, we propose strain manipulation and reductive annealing as optimization pathways for improving the spintronic functionality of Sr2FeMoO6.

Spin Selective Charge Transport through Cysteine Capped CdSe Quantum Dots

This work demonstrates that chiral imprinted CdSe quantum dots (QDs) can act as spin selective filters for charge transport. The spin filtering properties of chiral nanoparticles were investigated by magnetic conductive-probe atomic force microscopy (mCP-AFM) measurements and magnetoresistance measurements. The mCP-AFM measurements show that the chirality of the quantum dots and the magnetic orientation of the tip affect the current-voltage curves. Similarly, magnetoresistance measurements demonstrate that the electrical transport through films of chiral quantum dots correlates with the chiroptical properties of the QD. The spin filtering properties of chiral quantum dots may prove useful in future applications, for example, photovoltaics, spintronics, and other spin-driven devices.

Asymmetric Hysteresis for Probing Dzyaloshinskii-Moriya Interaction

The interfacial Dzyaloshinskii-Moriya interaction (DMI) is intimately related to the prospect of superior domain-wall dynamics and the formation of magnetic skyrmions. Although some experimental efforts have been recently proposed to quantify these interactions and the underlying physics, it is still far from trivial to address the interfacial DMI. Inspired by the reported tilt of the magnetization of the side edge of a thin film structure, we here present a quasi-static, straightforward measurement tool. By using laterally asymmetric triangular-shaped microstructures, it is demonstrated that interfacial DMI combined with an in-plane magnetic field yields a unique and significant shift in magnetic hysteresis. By systematic variation of the shape of the triangular objects combined with a droplet model for domain nucleation, a robust value for the strength and sign of interfacial DMI is obtained. This method gives immediate and quantitative access to DMI, enabling a much faster exploration of new DMI systems for future nanotechnology.

Interface-driven topological Hall effect in SrRuO3-SrIrO3 bilayer

Electron transport coupled with magnetism has attracted attention over the years. Among them, recently discovered is topological Hall effect (THE), originating from scalar spin chirality, that is, the solid angle subtended by the spins. THE is found to be a promising tool for probing the Dzyaloshinskii-Moriya (DM) interaction and consequent magnetic skyrmions. This interaction arises from broken inversion symmetry and hence can be artificially introduced at interface; this concept is lately verified in metal multilayers. However, there are few attempts to investigate such DM interaction at interface through electron transport. We clarified how the transport properties couple with interface DM interaction by fabricating the epitaxial oxide interface. We observed THE in epitaxial bilayers consisting of ferromagnetic SrRuO3 and paramagnetic SrIrO3 over a wide region of both temperature and magnetic field. The magnitude of THE rapidly decreases with the thickness of SrRuO3, suggesting that the interface DM interaction plays a significant role. Such interaction is expected to realize a 10-nm-sized Néel-type magnetic skyrmion. The present results established that the high-quality oxide interface enables us to tune the effective DM interaction; this can be a step toward future topological electronics.

Sulfur Doping Induces Strong Ferromagnetic Ordering in Graphene: Effect of Concentration and Substitution Mechanism

Imprinting ferromagnetism to a graphene structure by substitution of carbon atoms with sulfur is reported. S-doped graphene (4.2 at%) shows strong ferromagnetic properties with saturation magnetization exceeding 5.5 emu g(-1) at 2 K, which is among the highest values reported for any sp-based system. The remarkable magnetic response is attributed to delocalization of electrons from sulfur injected into the graphene conduction band.

Ferromagnetism: Sulfur Doping Induces Strong Ferromagnetic Ordering in Graphene: Effect of Concentration and Substitution Mechanism (Adv. Mater. 25/2016)

R. Zbořil and co-workers show that doping a graphene lattice with sulfur induces magnetic centers which display ferromagnetic order below ≈62 K. As described on page 5045, sulfur doping promotes magnetically active configurations resembling the gamma-thiothiapyrone motif. Enhanced magnetic properties of sulfur-doped graphene are attributed to two unpaired electrons from each sulfur atom injected into the graphene conducting band where they are delocalized between the S and C atoms.

Flexible MgO Barrier Magnetic Tunnel Junctions

Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components.

Current-Induced Spin Polarization in Topological Insulator-Graphene Heterostructures

Further development of the field of all-electric spintronics requires the successful integration of spin transport channels with spin injector/generator elements. While with the advent of graphene and related 2D materials high performance spin channel materials are available, the use of nanostructured spin generators remains a major challenge. Especially promising for the latter purpose are 3D topological insulators, whose 2D surface states host massless Dirac Fermions with spin-momentum locking. Here, we demonstrate injection of spin-polarized current from a topological insulator into graphene, enabled by its intimate coupling to an ultrathin Bi2Te2Se nanoplatelet within a van der Waals epitaxial heterostructure. The spin switching signal, whose magnitude scales inversely with temperature, is detectable up to ∼15 K. Our findings establish topological insulators as prospective future components of spintronic devices wherein spin manipulation is achieved by purely electrical means.

Active Morphology Control for Concomitant Long Distance Spin Transport and Photoresponse in a Single Organic Device

Long distance spin transport and photoresponse are demonstrated in a single F16 CuPc spin valve. By introducing a low-temperature strategy for controlling the morphology of the organic layer during the fabrication of a molecular spin valve, a large spin-diffusion length up to 180 nm is achieved at room temperature. Magnetoresistive and photoresponsive signals are simultaneously observed even in an air atmosphere.

Direct imaging of magnetic field-driven transitions of skyrmion cluster states in FeGe nanodisks

Magnetic skyrmion is a nanosized magnetic whirl with nontrivial topology, which is highly relevant for applications on future memory devices. To enable the applications, theoretical efforts have been made to understand the dynamics of individual skyrmions in magnetic nanostructures. However, directly imaging the evolution of highly geometrically confined individual skyrmions is challenging. Here, we report the magnetic field-driven dynamics of individual skyrmions in FeGe nanodisks with diameters on the order of several skyrmion sizes by using Lorentz transmission electron microscopy. In contrast to the conventional skyrmion lattice in bulk, a series of skyrmion cluster states with different geometrical configurations and the field-driven cascading phase transitions are identified at temperatures far below the magnetic transition temperature. Furthermore, a dynamics, namely the intermittent jumps between the neighboring skyrmion cluster states, is found at elevated temperatures, at which the thermal energy competes with the energy barrier between the skyrmion cluster states.

Manipulating spin-polarized photocurrents in 2D transition metal dichalcogenides

Manipulating spin polarization of electrons in nonmagnetic semiconductors by means of electric fields or optical fields is an essential theme of the conceptual nonmagnetic semiconductor-based spintronics. Here we experimentally demonstrate an electric method of detecting spin polarization in monolayer transition metal dichalcogenides (TMDs) generated by circularly polarized optical pumping. The spin-polarized photocurrent is achieved through the valley-dependent optical selection rules and the spin-valley locking in monolayer WS2, and electrically detected by a lateral spin-valve structure with ferromagnetic contacts. The demonstrated long spin-valley lifetime, the unique valley-contrasted physics, and the spin-valley locking make monolayer WS2 an unprecedented candidate for semiconductor-based spintronics.

Probing the Buried Magnetic Interfaces

Understanding magnetism in ferromagnetic metal/semiconductor (FM/SC) heterostructures is important to the development of the new-generation spin field-effect transistor. Here, we report an element-specific X-ray magnetic circular dichroism study of the interfacial magnetic moments for two FM/SC model systems, namely, Co/GaAs and Ni/GaAs, which was enabled using a specially designed FM1/FM2/SC superstructure. We observed a robust room temperature magnetization of the interfacial Co, while that of the interfacial Ni was strongly diminished down to 5 K because of hybridization of the Ni d(eg) and GaAs sp(3) states. The validity of the selected method was confirmed by first-principles calculations, showing only small deviations (<0.02 and <0.07 μB/atom for Co/GaAs and Ni/GaAs, respectively) compared to the real FM/SC interfaces. Our work proved that the electronic structure and magnetic ground state of the interfacial FM2 is not altered when the topmost FM2 is replaced by FM1 and that this model is applicable generally for probing the buried magnetic interfaces in the advanced spintronic materials..