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Kim SY, Zhang H, Rubio-Magnieto J. Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices. J Phys Chem Lett 2024:10087-10103. [PMID: 39331473 DOI: 10.1021/acs.jpclett.4c02170] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/29/2024]
Abstract
With the advent of the generation of artificial intelligence (AI) based on big data-processing technologies, next-generation memristor and memristive neuromorphic devices have been actively studied with great interest to overcome the von Neumann bottleneck limits. Among various candidates, halide perovskites (HPs) have been in the spotlight as potential candidates for these devices due to their unique switching characteristics with low energy consumption and flexible integration compatibility across various sources for scalability. We outline the characteristics and operating principles of HP-based memristors and their neuromorphic devices. We explain filamentary- and interface-type switching according to the type of conducting pathway occurring inside the active HP layer and the operating mechanisms depending on the species that make up this conducting pathway. We summarize the types and mechanisms of current changes beneficial for neuromorphic device applications and finally organize various suggested analysis tools and physical models to enable experimental determination of switching mechanisms from various perspectives.
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Affiliation(s)
- So-Yeon Kim
- Instituto de Tecnología Química (ITQ), Universitat Politècnica de València- Consejo Superior de Investigaciones Científicas (UPV-CSIC), 46022 València, Spain
| | - Heyi Zhang
- Instituto de Tecnología Química (ITQ), Universitat Politècnica de València- Consejo Superior de Investigaciones Científicas (UPV-CSIC), 46022 València, Spain
- Institute of Advanced Materials (INAM), Universitat Jaume I, 12006 Castelló, Spain
| | - Jenifer Rubio-Magnieto
- Instituto de Tecnología Química (ITQ), Universitat Politècnica de València- Consejo Superior de Investigaciones Científicas (UPV-CSIC), 46022 València, Spain
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2
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Liu Z, Cheng P, Kang R, Zhou J, Wang X, Zhao X, Zhao J, Zuo Z. All-Inorganic CsPbBr 3 Perovskite Planar-Type Memristors as Optoelectronic Synapses. ACS APPLIED MATERIALS & INTERFACES 2024; 16:51065-51079. [PMID: 39268654 DOI: 10.1021/acsami.4c09673] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/17/2024]
Abstract
Mimicking fundamental synaptic working principles with memristors contributes an essential step toward constructing brain-inspired, high-efficiency neuromorphic systems that surpass von Neumann system computers. Here, an electroforming-free planar-type memristor based on a CsPbBr3 single crystal is proposed and exhibits excellent resistive switching (RS) behaviors including stable endurance, ultralow power consumption, and fast switching speed. Furthermore, an optically tunable RS performance is demonstrated by manipulating irradiation intensity and wavelength. Optical analysis techniques such as steady-state photoluminescence and time-resolved photoluminescence are employed to investigate the distribution of Br ions and vacancies before and after quantitative polarization, describing migration dynamic processes to elucidate the RS mechanism. Importantly, a CsPbBr3 single crystal, as the optoelectronic synapse, shows unique potential to emulate photoenhanced synaptic functions such as excitatory postsynaptic current, paired-pulse facilitation, long-term potentiation/depression, spike-timing-dependent plasticity, spike-voltage-dependent plasticity, and learning-forgetting-relearning process with ultralow per synapse event energy consumption. A classical Pavlov's dog experiment is simulated with a combination of optical and electrical stimulation. Finally, pattern recognition with simulated artificial neural networks based on our synapse reached an accuracy of 93.11%. The special strategy and superior RS characteristics of optoelectronic synapses provide a pathway toward high-performance, energy-efficient neuromorphic electronics.
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Affiliation(s)
- Zehan Liu
- Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
| | - Pengpeng Cheng
- Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
| | - Ruyan Kang
- Institute of Novel Semiconductors, Shandong University, Jinan 250100, P. R. China
| | - Jian Zhou
- Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
| | - Xiaoshan Wang
- Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
| | - Xian Zhao
- Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
| | - Jia Zhao
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
- School of Information Science and Engineering, Shandong University, Qingdao 266237, P. R. China
| | - Zhiyuan Zuo
- Center for Optics Research and Engineering, Shandong University, Qingdao 266237, P. R. China
- Key Laboratory of Laser & Infrared System (Shandong University), Ministry of Education, Shandong University, Qingdao 266237, P. R. China
- Institute of Novel Semiconductors, Shandong University, Jinan 250100, P. R. China
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3
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Li H, Li Q, Sun T, Zhou Y, Han ST. Recent advances in artificial neuromorphic applications based on perovskite composites. MATERIALS HORIZONS 2024. [PMID: 39140168 DOI: 10.1039/d4mh00574k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
High-performance perovskite materials with excellent physical, electronic, and optical properties play a significant role in artificial neuromorphic devices. However, the development of perovskites in microelectronics is inevitably hindered by their intrinsic non-ideal properties, such as high defect density, environmental sensitivity, and toxicity. By leveraging materials engineering, integrating various materials with perovskites to leverage their mutual strengths presents great potential to enhance ion migration, energy level alignment, photoresponsivity, and surface passivation, thereby advancing optoelectronic and neuromorphic device development. This review initially provides an overview of perovskite materials across different dimensions, highlighting their physical properties and detailing their applications and metrics in two- and three-terminal devices. Subsequently, we comprehensively summarize the application of perovskites in combination with other materials, including organics, nanomaterials, oxides, ferroelectrics, and crystalline porous materials (CPMs), to develop advanced devices such as memristors, transistors, photodetectors, sensors, light-emitting diodes (LEDs), and artificial neuromorphic systems. Lastly, we outline the challenges and future research directions in synthesizing perovskite composites for neuromorphic devices. Through the review and analysis, we aim to broaden the utilization of perovskites and their composites in neuromorphic research, offering new insights and approaches for grasping the intricate physical working mechanisms and functionalities of perovskites.
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Affiliation(s)
- Huaxin Li
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Qingxiu Li
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Tao Sun
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, P. R. China.
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Xu L, Fu Y, Li Y, Zhou G, Lu X. CsPbI 3 Perovskite Quantum Dot-Based WORM Memory Device with Intrinsic Ternary States. ACS APPLIED MATERIALS & INTERFACES 2024; 16:39827-39834. [PMID: 39034650 PMCID: PMC11299139 DOI: 10.1021/acsami.4c07044] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2024] [Revised: 07/12/2024] [Accepted: 07/15/2024] [Indexed: 07/23/2024]
Abstract
The migration of mobile ionic halide vacancies is usually considered detrimental to the performance and stability of perovskite optoelectronic devices. Taking advantage of this intrinsic feature, we fabricated a CsPbI3 perovskite quantum dot (PQD)-based write-once-read-many-times (WORM) memory device with a simple sandwich structure that demonstrates intrinsic ternary states with a high ON/OFF ratio of 103:102:1 and a long retention time of 104 s. Through electrochemical impedance spectroscopy, we proved that the resistive switching is achieved by the migration of mobile iodine vacancies (VIs) under an electric field to form conductive filaments (CFs). Using in situ conductive atomic force microscopy, we further revealed that the multilevel property arises from the different activation energies for VIs to migrate at grain boundaries and grain interiors, resulting in two distinct pathways for CFs to grow. Our work highlights the potential of CsPbI3 PQD-based WORM devices, showcasing intrinsic multilevel properties achieved in a simple device structure by rationally controlling the drift of ionic defects.
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Affiliation(s)
- Luhang Xu
- Department
of Physics, The Chinese University of Hong
Kong, New Territories, Shatin, Hong Kong SAR 999077, China
| | - Yuang Fu
- Department
of Physics, The Chinese University of Hong
Kong, New Territories, Shatin, Hong Kong SAR 999077, China
| | - Yuhao Li
- Spallation
Neutron Source Science Center, Dongguan 523803, China
| | - Guodong Zhou
- College
of Integrated Circuits, Zhejiang University, Hangzhou 311200, China
| | - Xinhui Lu
- Department
of Physics, The Chinese University of Hong
Kong, New Territories, Shatin, Hong Kong SAR 999077, China
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5
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Wei H, Gong J, Liu J, He G, Ni Y, Fu C, Yang L, Guo J, Xu Z, Xu W. Thermally and Mechanically Stable Perovskite Artificial Synapse as Tuned by Phase Engineering for Efferent Neuromuscular Control. NANO LETTERS 2024. [PMID: 39023921 DOI: 10.1021/acs.nanolett.4c02240] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/20/2024]
Abstract
The doping of perovskites with mixed cations and mixed halides is an effective strategy to optimize phase stability. In this study, we introduce a cubic black phase perovskite CsyFA(1-y)Pb(BrxI(1-x))3 artificial synapse, using phase engineering by adjusting the cesium-bromide content. Low-bromine mixed perovskites are suitable to improve the electric pulse excitation sensitivity and stability of the device. Specifically, the low-bromine and low-cesium mixed perovskite (x = 0.15, y = 0.22) annealed at 373 K allows the device to maintain logic response even after 1000 mechanical flex/flat cycles. The device also shows good thermal stability up to temperatures of 333 K. We have demonstrated reflex-arc behavior with MCMHP synaptic units, capable of making sensory warnings at high frequency. This compositionally engineered, dual-mixed perovskite synaptic device provides significant potential for perceptual soft neurorobotic systems and prostheses.
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Affiliation(s)
| | - Jiangdong Gong
- School of Biomedical Engineering, Division of Life Sciences and Medicine, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Center for Intelligent Medical Equipment and Devices, Institute for Innovative Medical Devices, Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, Jiangsu 215123, People's Republic of China
| | - Jiaqi Liu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, People's Republic of China
| | | | - Yao Ni
- School of Integrated Circuits, Guangdong University of Technology, Guangzhou, Guangdong 510006, People's Republic of China
| | | | - Lu Yang
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, People's Republic of China
| | - Jiahao Guo
- School of Biomedical Engineering, Division of Life Sciences and Medicine, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- Center for Intelligent Medical Equipment and Devices, Institute for Innovative Medical Devices, Suzhou Institute for Advanced Research, University of Science and Technology of China, Suzhou, Jiangsu 215123, People's Republic of China
| | - Zhipeng Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, People's Republic of China
| | - Wentao Xu
- Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300350, People's Republic of China
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Loizos M, Rogdakis K, Luo W, Zimmermann P, Hinderhofer A, Lukić J, Tountas M, Schreiber F, Milić JV, Kymakis E. Resistive switching memories with enhanced durability enabled by mixed-dimensional perfluoroarene perovskite heterostructures. NANOSCALE HORIZONS 2024; 9:1146-1154. [PMID: 38767026 PMCID: PMC11195346 DOI: 10.1039/d4nh00104d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2024] [Accepted: 05/03/2024] [Indexed: 05/22/2024]
Abstract
Hybrid halide perovskites are attractive candidates for resistive switching memories in neuromorphic computing applications due to their mixed ionic-electronic conductivity. Moreover, their exceptional optoelectronic characteristics make them effective as semiconductors in photovoltaics, opening perspectives for self-powered memory elements. These devices, however, remain unexploited, which is related to the variability in their switching characteristics, weak endurance, and retention, which limit their performance and practical use. To address this challenge, we applied low-dimensional perovskite capping layers onto 3D mixed halide perovskites using two perfluoroarene organic cations, namely (perfluorobenzyl)ammonium and (perfluoro-1,4-phenylene)dimethylammonium iodide, forming Ruddlesden-Popper and Dion-Jacobson 2D perovskite phases, respectively. The corresponding mixed-dimensional perovskite heterostructures were used to fabricate resistive switching memories based on perovskite solar cell architectures, showing that the devices based on perfluoroarene heterostructures exhibited enhanced performance and stability in inert and ambient air atmosphere. This opens perspectives for multidimensional perovskite materials in durable self-powered memory elements in the future.
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Affiliation(s)
- Michalis Loizos
- Department of Electrical & Computer Engineering, Hellenic Mediterranean University (HMU), Heraklion 71410, Crete, Greece.
| | - Konstantinos Rogdakis
- Department of Electrical & Computer Engineering, Hellenic Mediterranean University (HMU), Heraklion 71410, Crete, Greece.
- Institute of Emerging Technologies (i-EMERGE) of HMU Research Center, Heraklion 71410, Crete, Greece
| | - Weifan Luo
- Adolphe Merkle Institute, University of Fribourg, Fribourg 1700, Switzerland.
| | - Paul Zimmermann
- Institute of Applied Physics, University of Tübingen, Tübingen 72076, Germany
| | | | - Jovan Lukić
- Adolphe Merkle Institute, University of Fribourg, Fribourg 1700, Switzerland.
| | - Marinos Tountas
- Department of Electrical & Computer Engineering, Hellenic Mediterranean University (HMU), Heraklion 71410, Crete, Greece.
| | - Frank Schreiber
- Institute of Applied Physics, University of Tübingen, Tübingen 72076, Germany
| | - Jovana V Milić
- Adolphe Merkle Institute, University of Fribourg, Fribourg 1700, Switzerland.
| | - Emmanuel Kymakis
- Department of Electrical & Computer Engineering, Hellenic Mediterranean University (HMU), Heraklion 71410, Crete, Greece.
- Institute of Emerging Technologies (i-EMERGE) of HMU Research Center, Heraklion 71410, Crete, Greece
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7
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Li B, Xia F, Du B, Zhang S, Xu L, Su Q, Zhang D, Yang J. 2D Halide Perovskites for High-Performance Resistive Switching Memory and Artificial Synapse Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2310263. [PMID: 38647431 PMCID: PMC11187899 DOI: 10.1002/advs.202310263] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2023] [Revised: 03/21/2024] [Indexed: 04/25/2024]
Abstract
Metal halide perovskites (MHPs) are considered as promising candidates in the application of nonvolatile high-density, low-cost resistive switching (RS) memories and artificial synapses, resulting from their excellent electronic and optoelectronic properties including large light absorption coefficient, fast ion migration, long carrier diffusion length, low trap density, high defect tolerance. Among MHPs, 2D halide perovskites have exotic layered structure and great environment stability as compared with 3D counterparts. Herein, recent advances of 2D MHPs for the RS memories and artificial synapses realms are comprehensively summarized and discussed, as well as the layered structure properties and the related physical mechanisms are presented. Furthermore, the current issues and developing roadmap for the next-generation 2D MHPs RS memories and artificial synapse are elucidated.
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Affiliation(s)
- Bixin Li
- School of Physics and ChemistryHunan First Normal UniversityChangsha410205China
- Shaanxi Institute of Flexible Electronics (SIFE)Northwestern Polytechnical University (NPU)Xi'anShaanxi710072China
- School of PhysicsCentral South University932 South Lushan RoadChangshaHunan410083China
| | - Fei Xia
- Shaanxi Institute of Flexible Electronics (SIFE)Northwestern Polytechnical University (NPU)Xi'anShaanxi710072China
| | - Bin Du
- School of Materials Science and EngineeringXi'an Polytechnic UniversityXi'an710048China
| | - Shiyang Zhang
- School of Physics and ChemistryHunan First Normal UniversityChangsha410205China
| | - Lan Xu
- School of Physics and ChemistryHunan First Normal UniversityChangsha410205China
| | - Qiong Su
- School of Physics and ChemistryHunan First Normal UniversityChangsha410205China
| | - Dingke Zhang
- School of Physics and Electronic EngineeringChongqing Normal UniversityChongqing401331China
| | - Junliang Yang
- School of PhysicsCentral South University932 South Lushan RoadChangshaHunan410083China
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8
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Muthu C, Resmi AN, Ajayakumar A, Ravindran NEA, Dayal G, Jinesh KB, Szaciłowski K, Vijayakumar C. Self-Assembly of Delta-Formamidinium Lead Iodide Nanoparticles to Nanorods: Study of Memristor Properties and Resistive Switching Mechanism. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304787. [PMID: 38243886 DOI: 10.1002/smll.202304787] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2023] [Revised: 12/02/2023] [Indexed: 01/22/2024]
Abstract
In the quest for advanced memristor technologies, this study introduces the synthesis of delta-formamidinium lead iodide (δ-FAPbI3) nanoparticles (NPs) and their self-assembly into nanorods (NRs). The formation of these NRs is facilitated by iodide vacancies, promoting the fusion of individual NPs at higher concentrations. Notably, these NRs exhibit robust stability under ambient conditions, a distinctive advantage attributed to the presence of capping ligands and a crystal lattice structured around face-sharing octahedra. When employed as the active layer in resistive random-access memory devices, these NRs demonstrate exceptional bipolar switching properties. A remarkable on/off ratio (105) is achieved, surpassing the performances of previously reported low-dimensional perovskite derivatives and α-FAPbI3 NP-based devices. This enhanced performance is attributed to the low off-state current owing to the reduced number of halide vacancies, intrinsic low dimensionality, and the parallel alignment of NRs on the FTO substrate. This study not only provides significant insights into the development of superior materials for memristor applications but also opens new avenues for exploring low-dimensional perovskite derivatives in advanced electronic devices.
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Affiliation(s)
- Chinnadurai Muthu
- Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695 019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201 002, India
| | - A N Resmi
- Department of Physics, Indian Institute of Space Science and Technology (IIST), Thiruvananthapuram, 695 547, India
| | - Avija Ajayakumar
- Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695 019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201 002, India
| | - N E Aswathi Ravindran
- Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695 019, India
| | - G Dayal
- Department of Physics, Indian Institute of Space Science and Technology (IIST), Thiruvananthapuram, 695 547, India
| | - K B Jinesh
- Department of Physics, Indian Institute of Space Science and Technology (IIST), Thiruvananthapuram, 695 547, India
| | - Konrad Szaciłowski
- Academic Centre for Materials and Nanotechnology, AGH University of Krakow, Mickiewicza 30, Krakow, 30 059, Poland
| | - Chakkooth Vijayakumar
- Chemical Sciences and Technology Division, CSIR-National Institute for Interdisciplinary Science and Technology (CSIR-NIIST), Thiruvananthapuram, 695 019, India
- Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201 002, India
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9
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Wang Z, Lyu M, Zhang BW, Xiao M, Zhang C, Han EQ, Wang L. Thermally Evaporated Metal Halide Perovskites and Their Analogues: Film Fabrication, Applications and Beyond. SMALL METHODS 2024:e2301633. [PMID: 38682581 DOI: 10.1002/smtd.202301633] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2023] [Revised: 04/06/2024] [Indexed: 05/01/2024]
Abstract
Metal halide perovskites emerge as promising semiconductors for optoelectronic devices due to ease of fabrication, attractive photophysical properties, their low cost, highly tunable material properties, and high performance. High-quality thin films of metal halide perovskites are the basis of most of these applications including solar cells, light-emitting diodes, photodetectors, and electronic memristors. A typical fabrication method for perovskite thin films is the solution method, which has several limitations in device reproducibility, adverse environmental impact, and utilization of raw materials. Thermal evaporation holds great promise in addressing these bottlenecks in fabricating high-quality halide perovskite thin films. It also has high compatibility with mass-production platforms that are well-established in industries. This review first introduces the basics of the thermal evaporation method with a particular focus on the critical parameters influencing the thin film deposition. The research progress of the fabrication of metal halide perovskite thin films is further summarized by different thermal evaporation approaches and their applications in solar cells and other optoelectronic devices. Finally, research challenges and future opportunities for both fundamental research and commercialization are discussed.
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Affiliation(s)
- Zitong Wang
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Miaoqiang Lyu
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Bo Wei Zhang
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Mu Xiao
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Chengxi Zhang
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - E Q Han
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Lianzhou Wang
- Nanomaterials Centre, School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, Brisbane, Queensland, 4072, Australia
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10
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Cheng M, Jiang J, Yan C, Lin Y, Mortazavi M, Kaul AB, Jiang Q. Progress and Application of Halide Perovskite Materials for Solar Cells and Light Emitting Devices. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:391. [PMID: 38470722 PMCID: PMC10933891 DOI: 10.3390/nano14050391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Revised: 02/14/2024] [Accepted: 02/16/2024] [Indexed: 03/14/2024]
Abstract
Halide perovskite materials have attracted worldwide attention in the photovoltaic area due to the rapid improvement in efficiency, from less than 4% in 2009 to 26.1% in 2023 with only a nanometer lever photo-active layer. Meanwhile, this nova star found applications in many other areas, such as light emitting, sensor, etc. This review started with the fundamentals of physics and chemistry behind the excellent performance of halide perovskite materials for photovoltaic/light emitting and the methods for preparing them. Then, it described the basic principles for solar cells and light emitting devices. It summarized the strategies including nanotechnology to improve the performance and the application of halide perovskite materials in these two areas: from structure-property relation to how each component in the devices affects the overall performance. Moreover, this review listed the challenges for the future applications of halide perovskite materials.
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Affiliation(s)
- Maoding Cheng
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
| | - Jingtian Jiang
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Chao Yan
- School of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212100, China
| | - Yuankun Lin
- Department of Physics, University of North Texas, Denton, TX 76203, USA
| | - Mansour Mortazavi
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
| | - Anupama B Kaul
- Department of Electrical Engineering, University of North Texas, Denton, TX 76207, USA
| | - Qinglong Jiang
- Department of Chemistry and Physics, University of Arkansas at Pine Bluff, Pine Bluff, AR 71601, USA
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11
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He S, Yu X, Wang J, Zhong W, Cheng B, Zhao J. Attaining inhibition of sneak current and versatile logic operations in a singular halide perovskite memristive device by introducing appropriate interface barriers. NANOSCALE 2024; 16:1102-1114. [PMID: 38008998 DOI: 10.1039/d3nr04633h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/28/2023]
Abstract
Emerging resistive switching devices hold the potential to realize densely packed passive nanocrossbar arrays, suitable for deployment as random access memory devices (ReRAMs) in both embedded and high-capacity storage applications. In this study, we have engineered ReRAMs comprising ITO/(UVO-treated) amorphous ZnO (a-ZnO)/MAPbI3/Ag which effectively mitigate cross-talk currents without additional components. Significantly, we successfully executed a comprehensive set of 12 distinct 2-input sequential logic functions in a single halide perovskite ReRAM unit for the first time. Furthermore, these logic functions are devoid of any dependency on external light sources, entail merely 1 or 2 logic steps, and showcase symmetrical operability. A superior resistive switching behavior was achieved by harmonizing the charge transport within the bulk MAPbI3 and the tunneling barriers at the interfaces. The outcomes indicate progress in mitigating cross-talk and executing multiple logic functions within a single halide perovskite ReRAM unit, offering a new perspective for the advancement of halide perovskite ReRAMs.
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Affiliation(s)
- Song He
- School of Physics Materials, Nanchang University, Jiangxi 330031, P. R. China.
| | - Xingyu Yu
- School of Physics Materials, Nanchang University, Jiangxi 330031, P. R. China.
| | - Juanjuan Wang
- School of Physics Materials, Nanchang University, Jiangxi 330031, P. R. China.
| | - WenKang Zhong
- School of Physics Materials, Nanchang University, Jiangxi 330031, P. R. China.
| | - Baochang Cheng
- School of Physics Materials, Nanchang University, Jiangxi 330031, P. R. China.
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi 330031, P. R. China
| | - Jie Zhao
- School of Physics Materials, Nanchang University, Jiangxi 330031, P. R. China.
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12
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Kim H, Kim JS, Choi J, Kim YH, Suh JM, Choi MJ, Shim YS, Kim SY, Lee TW, Jang HW. MAPbBr 3 Halide Perovskite-Based Resistive Random-Access Memories Using Electron Transport Layers for Long Endurance Cycles and Retention Time. ACS APPLIED MATERIALS & INTERFACES 2024; 16:2457-2466. [PMID: 38166386 DOI: 10.1021/acsami.3c01450] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
Recent studies have focused on exploring the potential of resistive random-access memory (ReRAM) utilizing halide perovskites as novel data storage devices. This interest stems from its notable attributes, including a high ON/OFF ratio, low operating voltages, and exceptional mechanical properties. Nevertheless, there have been reports indicating that memory systems utilizing halide perovskites encounter certain obstacles pertaining to their stability and dependability, mostly assessed through endurance and retention time. Moreover, the presence of these problems can potentially restrict their practical applicability. This study explores a resistive switching memory device utilizing MAPbBr3 perovskite, which demonstrates bipolar switching characteristics. The device fabrication procedure involves a low-temperature, all-solution process. For the purpose of enhancing the device's reliability, the utilization of TPBI(2,2',2″-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) as an electron transfer material on the MAPbBr3 switching layer was implemented for the first time. The formation and rupture of Ag filaments in the MAPbBr3 perovskite switching layer are attributed to reduction-oxidation reactions. The TPBI is involved in the regulation of filaments during the SET and RESET processes. Hence, it can be shown that the MAPbBr3 device incorporating TPBI exhibited about 1000 endurance cycles when subjected to continuous voltage pulses. Moreover, the device consistently maintained ON/OFF ratios above 107. In contrast, the original MAPbBr3 device without TPBI demonstrated a significantly lower endurance with only 90 cycles observed. In addition, the MAPbBr3 device integrated with TPBI exhibited a retention time exceeding 3 × 103 s. The findings of this research provide compelling evidence to support the notion that electron transfer materials have promise for the development of halide perovskite memory systems owing to their favorable attributes of dependability and stability.
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Affiliation(s)
- Hyojung Kim
- Department of Materials Science and Engineering Seoul National University, Seoul 08826, Republic of Korea
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
- Department of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Joo Sung Kim
- Department of Materials Science and Engineering Seoul National University, Seoul 08826, Republic of Korea
| | - Jaeho Choi
- Department of Materials Science and Engineering Seoul National University, Seoul 08826, Republic of Korea
| | - Young-Hoon Kim
- Department of Materials Science and Engineering Seoul National University, Seoul 08826, Republic of Korea
- Department of Energy Engineering, Hanyang University, Seoul 04763, Republic of Korea
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Min-Ju Choi
- Department of Materials Science and Engineering Seoul National University, Seoul 08826, Republic of Korea
| | - Young-Seok Shim
- School of Energy, Materials and Chemical Engineering, Korea University of Technology and Education, Cheonan 31253, Republic of Korea
| | - Soo Young Kim
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Tae-Woo Lee
- Department of Materials Science and Engineering Seoul National University, Seoul 08826, Republic of Korea
| | - Ho Won Jang
- Department of Materials Science and Engineering Seoul National University, Seoul 08826, Republic of Korea
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13
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Ji F, Zhang B, Chen WM, Buyanova IA, Wang F, Boschloo G. Amine Gas-Induced Reversible Optical Bleaching of Bismuth-Based Lead-Free Perovskite Thin Films. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2306391. [PMID: 38044299 PMCID: PMC10811464 DOI: 10.1002/advs.202306391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 11/09/2023] [Indexed: 12/05/2023]
Abstract
Reversible optical property changes in lead-free perovskites have recently received great interest due to their potential applications in smart windows, sensors, data encryption, and various on-demand devices. However, it is challenging to achieve remarkable color changes in their thin films. Here, methylamine gas (CH3 NH2 , MA0 ) induced switchable optical bleaching of bismuth (Bi)-based perovskite films is demonstrated for the first time. By exposure to an MA0 atmosphere, the color of Cs2 AgBiBr6 (CABB) films changes from yellow to transparent, and the color of Cs3 Bi2 I9 (CBI) films changes from dark red to transparent. More interestingly, the underlying reason is found to be the interactions between MA0 and Bi3+ with the formation of an amorphous liquefied transparent intermediate phase, which is different from that of lead-based perovskite systems. Moreover, the generality of this approach is demonstrated with other amine gases, including ethylamine (C2 H5 NH2 , EA0 ) and butylamine (CH3 (CH2 )3 NH2 , BA0 ), and another compound, Cs3 Sb2 I9 , by observing a similar reversible optical bleaching phenomenon. The potential for the application of CABB and CBI films in switchable smart windows is investigated. This study provides valuable insights into the interactions between amine gases and lead-free perovskites, opening up new possibilities for high-efficiency optoelectronic and stimuli-responsive applications of these emerging Bi-based materials.
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Affiliation(s)
- Fuxiang Ji
- Department of Chemistry‐Ångström LaboratoryPhysical ChemistryUppsala UniversityUppsalaSE‐751 20Sweden
| | - Bin Zhang
- Department of PhysicsChemistry and Biology (IFM)Linköping UniversityLinköpingSE‐58 183Sweden
| | - Weimin M Chen
- Department of PhysicsChemistry and Biology (IFM)Linköping UniversityLinköpingSE‐58 183Sweden
| | - Irina A Buyanova
- Department of PhysicsChemistry and Biology (IFM)Linköping UniversityLinköpingSE‐58 183Sweden
| | - Feng Wang
- Department of PhysicsChemistry and Biology (IFM)Linköping UniversityLinköpingSE‐58 183Sweden
| | - Gerrit Boschloo
- Department of Chemistry‐Ångström LaboratoryPhysical ChemistryUppsala UniversityUppsalaSE‐751 20Sweden
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14
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Liu X, Fan Z, Zheng Y, Zha J, Zhang Y, Zhu S, Zhang Z, Zhang X, Huang F, Liang T, Li C, Wang Q, Tan C. Controlled Synthesis of Lead-Free Double Perovskite Colloidal Nanocrystals for Nonvolatile Resistive Memory Devices. ACS APPLIED MATERIALS & INTERFACES 2023; 15:55991-56002. [PMID: 37987746 DOI: 10.1021/acsami.3c12576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2023]
Abstract
Although lead-free double perovskites such as Cs2AgBiBr6 have been widely explored, they still remain a daunting challenge for the controlled synthesis of lead-free double perovskite nanocrystals with highly tunable morphology and band structure. Here, we report the controlled synthesis of lead-free double perovskite colloidal nanocrystals including Cs2AgBiBr6 and Cs2AgInxBi1-xBr6 via a facile wet-chemical synthesis method for the fabrication of high-performance nonvolatile resistive memory devices. Cs2AgBiBr6 colloidal nanocrystals with well-defined cuboidal, hexagonal, and triangular morphologies are synthesized through a facile wet-chemical approach by tuning the reaction temperature from 150 to 190 °C. Further incorporating indium into Cs2AgBiBr6 to synthesize alloyed Cs2AgInxBi1-xBr6 nanocrystals not only can induce the indirect-to-direct bandgap transition with enhanced photoluminescence but also can improve its structural stability. After optimizing the active layers and device structure, the fabricated Ag/polymethylene acrylate@Cs2AgIn0.25Bi0.75Br6/ITO resistive memory device exhibits a low power consumption (the operating voltage is ∼0.17 V), excellent cycling stability (>10 000 cycles), and good synaptic property. Our study would enable the facile wet-chemical synthesis of lead-free double perovskite colloidal nanocrystals in a highly controllable manner for the development of high-performance resistive memory devices.
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Affiliation(s)
- Xingyu Liu
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Zhen Fan
- Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Yuhui Zheng
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Jiajia Zha
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, P. R. China
| | - Yong Zhang
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China
| | - Siyuan Zhu
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China
| | - Zhang Zhang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Xuyan Zhang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, P. R. China
| | - Fei Huang
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Tong Liang
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Chunxia Li
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Qianming Wang
- School of Chemistry, Guangzhou Key Laboratory of Analytical Chemistry for Biomedicine, South China Normal University, Guangzhou 510006, P. R. China
| | - Chaoliang Tan
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong SAR 999077, P. R. China
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15
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Wang H, Yin Y, Xu J, Li J, Bao Y, An M, Tang L, Jin S, Tian W, Yang Y. Field-Induced Transport Anisotropy in Single-Crystalline All-Inorganic Lead-Halide Perovskite Nanowires. ACS NANO 2023. [PMID: 37975813 DOI: 10.1021/acsnano.3c06944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
The dynamic crystal lattice of halide perovskites facilitates the coupled transport of ions and electrons, offering innovative concepts in semiconductor iontronic devices that surpass solar cell applications. However, a comprehensive understanding of the intricacies of coupled ionic and electronic transport at the microscale remains ambiguous, owing to the inhomogeneity in ploy-crystalline perovskite thin films. In this work, we employed one-dimensional (1D) single-crystalline CsPbBr3 nanowires (NWs) to investigate the electric field induced ionic transport. Upon poling by an external bias, the previously uniform NW exhibits highly anisotropic ionic transport, which is identified as the origin of the giant switchable photovoltaic effect by spatially resolved scanning photocurrent microscopy. The subsequent ultrafast scanning photoluminescence (PL) microscopy measurements demonstrate significant localization of photocarriers near one terminal of the device, which is attributed to the accumulation of halogen vacancies. In addition, thanks to the enhancement of the local electric field, the poled device shows a 10-fold increase of photoresponse speed. Our findings favor the scale-down of perovskite devices to the submicrometer scale, extending their applications in self-powered iontronic and optoelectronic devices.
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Affiliation(s)
- Hengshan Wang
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Yanfeng Yin
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Jiao Xu
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Jing Li
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Physics, Dalian University of Technology, No.2 Linggong Road, Dalian 116024, China
| | - Yanan Bao
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Meiqi An
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Lingzhi Tang
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Shengye Jin
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Wenming Tian
- State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China
| | - Yiming Yang
- School of Integrated Circuits, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
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16
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Li B, Zhang S, Xu L, Su Q, Du B. Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory. Polymers (Basel) 2023; 15:4374. [PMID: 38006098 PMCID: PMC10675020 DOI: 10.3390/polym15224374] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Revised: 11/07/2023] [Accepted: 11/07/2023] [Indexed: 11/26/2023] Open
Abstract
Facing the era of information explosion and the advent of artificial intelligence, there is a growing demand for information technologies with huge storage capacity and efficient computer processing. However, traditional silicon-based storage and computing technology will reach their limits and cannot meet the post-Moore information storage requirements of ultrasmall size, ultrahigh density, flexibility, biocompatibility, and recyclability. As a response to these concerns, polymer-based resistive memory materials have emerged as promising candidates for next-generation information storage and neuromorphic computing applications, with the advantages of easy molecular design, volatile and non-volatile storage, flexibility, and facile fabrication. Herein, we first summarize the memory device structures, memory effects, and memory mechanisms of polymers. Then, the recent advances in polymer resistive switching materials, including single-component polymers, polymer mixtures, 2D covalent polymers, and biomacromolecules for resistive memory devices, are highlighted. Finally, the challenges and future prospects of polymer memory materials and devices are discussed. Advances in polymer-based memristors will open new avenues in the design and integration of high-performance switching devices and facilitate their application in future information technology.
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Affiliation(s)
- Bixin Li
- School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China; (B.L.)
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), Xi’an 710072, China
- School of Physics, Central South University, 932 South Lushan Road, Changsha 410083, China
| | - Shiyang Zhang
- School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China; (B.L.)
| | - Lan Xu
- School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China; (B.L.)
| | - Qiong Su
- School of Physics and Chemistry, Hunan First Normal University, Changsha 410205, China; (B.L.)
| | - Bin Du
- School of Materials Science and Engineering, Xi’an Polytechnic University, Xi’an 710048, China
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17
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Wang H, Bao Y, Li J, Li D, An M, Tang L, Li J, Tang H, Chi Y, Xu J, Yang Y. Highly Anisotropic Polarization Induced by Electrical Poling in Single-Crystalline All-Inorganic Perovskite Nanoplates. J Phys Chem Lett 2023; 14:9943-9950. [PMID: 37903345 DOI: 10.1021/acs.jpclett.3c02394] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/01/2023]
Abstract
The coupled ionic and electronic transport in halide perovskites opens up new possibilities for semiconductor iontronic devices beyond solar cells. Nevertheless, the fundamental understanding of ionic behavior at the microscale remains vague, largely because of the inhomogeneity in polycrystalline thin films. Here, we show that the ion dynamics in single-crystalline perovskite nanoplates (NPs) are significantly different and that an external bias may induce highly anisotropic ionic transport in the NPs, thereby leading to a greatly enhanced local electric field. Using modified scanning photocurrent microscopy (SPCM), the origin of the photocurrent is pinpointed to the cathode region of the NP device, where subsequent energy dispersive spectroscopy (EDS) characterization confirms a large accumulation of halogen vacancies. In addition, the Kelvin probe force microscopy (KPFM) measurement demonstrates a strong built-in electric field within a submicron length near the cathode, which alters the local electronic structure for efficient photo carrier separation. Such field-induced ionic behavior deepens the understanding of ion dynamics in perovskites and promotes scale-down of perovskite micro- and nanoiontronic and ion-optoelectronic devices.
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Affiliation(s)
- Hengshan Wang
- School of Microelectronics, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Yanan Bao
- School of Microelectronics, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Jing Li
- School of Microelectronics, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
- Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Physics, Dalian University of Technology, No. 2 Linggong Road, Dalian 116024, China
| | - Dongwen Li
- Jilin Provincial Key Laboratory of Architectural Electricity & Comprehensive Energy Saving, School of Electrical Engineering and Computer, Jilin Jianzhu University, Changchun 130118, China
| | - Meiqi An
- School of Microelectronics, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Lingzhi Tang
- School of Microelectronics, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Jianliang Li
- School of Microelectronics, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Huayi Tang
- School of Microelectronics, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Yaodan Chi
- Jilin Provincial Key Laboratory of Architectural Electricity & Comprehensive Energy Saving, School of Electrical Engineering and Computer, Jilin Jianzhu University, Changchun 130118, China
| | - Jiao Xu
- School of Microelectronics, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
| | - Yiming Yang
- School of Microelectronics, Dalian University of Technology, No. 321 Tuqiang Road, Dalian 116620, China
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18
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Liu JY, Zhang XH, Fang H, Zhang SQ, Chen Y, Liao Q, Chen HM, Chen HP, Lin MJ. Novel Semiconductive Ternary Hybrid Heterostructures for Artificial Optoelectronic Synapses. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302197. [PMID: 37403302 DOI: 10.1002/smll.202302197] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Revised: 06/12/2023] [Indexed: 07/06/2023]
Abstract
Synaptic devices that mimic biological synapses are considered as promising candidates for brain-inspired devices, offering the functionalities in neuromorphic computing. However, modulation of emerging optoelectronic synaptic devices has rarely been reported. Herein, a semiconductive ternary hybrid heterostructure is prepared with a D-D'-A configuration by introducing polyoxometalate (POM) as an additional electroactive donor (D') into a metalloviologen-based D-A framework. The obtained material features an unprecedented porous 8-connected bcu-net that accommodates nanoscale [α-SiW12 O40 ]4- counterions, displaying uncommon optoelectronic responses. Besides, the fabricated synaptic device based on this material can achieve dual-modulation of synaptic plasticity due to the synergetic effect of electron reservoir POM and photoinduced electron transfer. And it can successfully simulate learning and memory processes similar to those in biological systems. The result provides a facile and effective strategy to customize multi-modality artificial synapses in the field of crystal engineering, which opens a new direction for developing high-performance neuromorphic devices.
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Affiliation(s)
- Jing-Yan Liu
- Key Laboratory of Molecule Synthesis and Function Discovery, and Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Xiang-Hong Zhang
- Institure of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, P. R. China
| | - Hua Fang
- Key Laboratory of Molecule Synthesis and Function Discovery, and Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Shu-Quan Zhang
- College of Zhicheng, Fuzhou University, Fuzhou, 350002, P. R. China
| | - Yong Chen
- Key Laboratory of Molecule Synthesis and Function Discovery, and Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Qing Liao
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Hong-Ming Chen
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Hui-Peng Chen
- Institure of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, P. R. China
| | - Mei-Jin Lin
- Key Laboratory of Molecule Synthesis and Function Discovery, and Fujian Provincial Key Laboratory of Advanced Inorganic Oxygenated Materials, College of Chemistry, Fuzhou University, Fuzhou, 350116, P. R. China
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350116, P. R. China
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19
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Yang X, Huang J, Gao S, Zhao Y, Huang T, Li H, Liu T, Yu Z, Cao R. Solution-Processed Hydrogen-Bonded Organic Framework Nanofilms for High-Performance Resistive Memory Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2305344. [PMID: 37540191 DOI: 10.1002/adma.202305344] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Revised: 07/27/2023] [Indexed: 08/05/2023]
Abstract
The integration of hydrogen-bonded organic frameworks (HOFs) into electronic devices holds great promise due to their high crystallinity, intrinsic porosity, and easy regeneration. However, despite their potential, the utilization of HOFs in electronic devices remains largely unexplored, primarily due to the challenges associated with fabricating high-quality films. Herein, a controlled synthesis of HOF nanofilms with smooth surface, good crystallinity, and high orientation is achieved using a solution-processed approach. The memristors exhibit outstanding bipolar switching performance with a low set voltage of 0.86 V, excellent retention of 1.64 × 104 s, and operational endurance of 60 cycles. Additionally, these robust memristors display remarkable thermal stability, maintaining their performance even at elevated temperatures of up to 200 °C. More strikingly, scratched HOF films can be readily regenerated through a simple solvent rinsing process, enabling their reuse for the fabrication of new memristors, which is difficult to achieve with traditional resistive switching materials. Additionally, a switching mechanism based on the reversible formation and annihilation of conductive filaments is revealed. This work provides novel and invaluable insights that have a significant impact on advancing the widespread adoption of HOFs as active layers in electronic devices.
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Affiliation(s)
- Xue Yang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, P. R. China
| | - Jian Huang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
- College of Chemistry and Materials Science, Fujian Normal University, Fuzhou, 350007, P. R. China
| | - Shuiying Gao
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Yanqi Zhao
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Tao Huang
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Hongfang Li
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Tianfu Liu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Zhiyang Yu
- State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fuzhou, 350002, P. R. China
| | - Rong Cao
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
- Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350108, P. R. China
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20
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Doan UTT, Le DK, Huynh TL, Ngo TT, Vo TQ, Thi MTT, Pham ATT, Tran VC, Nguyen PT, Pham NK. Tuned Transport Path of Perovskite MAPbI 3 -based Memristor Structure. Chemphyschem 2023; 24:e202300210. [PMID: 37394623 DOI: 10.1002/cphc.202300210] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Revised: 06/29/2023] [Accepted: 06/30/2023] [Indexed: 07/04/2023]
Abstract
In this study, the features of resistive random access memory (RRAM) employing a straightforward Cr/MAPbI3 /FTO three-layer structure have been examined and clarified. The device displays various resistance switching (RS) behavior at various sweep voltages between 0.5 and 5 V. The RS effect has a conversion in the direction of the SET and RESET processes during sweeping for a number of cycles at a specific voltage. The directional change of the RS processes corresponds to the dominant transition between the generation/recombination of iodide ion and vacancy in the MAPbI3 perovskite layer and the electrochemical metallization of the Cr electrode under the influence of an electric field, which results in the conductive filament (CF) formation/rupture. At each stage, these processes are controlled by specific charge conduction mechanisms, including Ohmic conduction, space-charge-limited conduction (SCLC), and variable-range hopping (VRH). By identifying the biased voltage and the quantity of voltage sweep cycles, one can take a new approach to control or modulate the pathways for effective charge transport. This new approach is made possible by an understanding of the RS characteristics and the corresponding mechanisms causing the variation of RS behavior in the structure.
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Affiliation(s)
- Uyen Tu Thi Doan
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City, 70000, Vietnam
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
- Laboratory of Advanced Materials, University of Science, Ho Chi Minh City, 70000, Vietnam
| | - Duy Khanh Le
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City, 70000, Vietnam
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
| | - Truong Lam Huynh
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City, 70000, Vietnam
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
| | - Tung Thanh Ngo
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
- Faculty of Chemistry, University of Science, Ho Chi Minh City, 70000, Vietnam
| | - Trieu Quang Vo
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City, 70000, Vietnam
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
| | - Minh Thu Tran Thi
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City, 70000, Vietnam
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
| | - Anh Tuan Thanh Pham
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
- Laboratory of Advanced Materials, University of Science, Ho Chi Minh City, 70000, Vietnam
| | - Vinh Cao Tran
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
- Laboratory of Advanced Materials, University of Science, Ho Chi Minh City, 70000, Vietnam
| | - Phuong Tuyet Nguyen
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
- Faculty of Chemistry, University of Science, Ho Chi Minh City, 70000, Vietnam
| | - Ngoc Kim Pham
- Faculty of Materials Science and Technology, University of Science, Ho Chi Minh City, 70000, Vietnam
- Vietnam National University, Ho Chi Minh City, 70000, Vietnam
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21
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Vats G, Hodges B, Ferguson AJ, Wheeler LM, Blackburn JL. Optical Memory, Switching, and Neuromorphic Functionality in Metal Halide Perovskite Materials and Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205459. [PMID: 36120918 DOI: 10.1002/adma.202205459] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2022] [Revised: 08/20/2022] [Indexed: 06/15/2023]
Abstract
Metal halide perovskite based materials have emerged over the past few decades as remarkable solution-processable optoelectronic materials with many intriguing properties and potential applications. These emerging materials have recently been considered for their promise in low-energy memory and information processing applications. In particular, their large optical cross-sections, high photoconductance contrast, large carrier-diffusion lengths, and mixed electronic/ionic transport mechanisms are attractive for enabling memory elements and neuromorphic devices that are written and/or read in the optical domain. Here, recent progress toward memory and neuromorphic functionality in metal halide perovskite materials and devices where photons are used as a critical degree of freedom for switching, memory, and neuromorphic functionality is reviewed.
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Affiliation(s)
- Gaurav Vats
- National Renewable Energy Laboratory, Golden, CO, 80401, USA
- Department of Physics and Astronomy, Katholieke Universiteit Leuven, Celestijnenlaan 200D, Leuven, B-3001, Belgium
| | - Brett Hodges
- National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | | | - Lance M Wheeler
- National Renewable Energy Laboratory, Golden, CO, 80401, USA
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22
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Torres F, Basaran AC, Schuller IK. Thermal Management in Neuromorphic Materials, Devices, and Networks. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205098. [PMID: 36067752 DOI: 10.1002/adma.202205098] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/06/2022] [Revised: 08/30/2022] [Indexed: 06/15/2023]
Abstract
Machine learning has experienced unprecedented growth in recent years, often referred to as an "artificial intelligence revolution." Biological systems inspire the fundamental approach for this new computing paradigm: using neural networks to classify large amounts of data into sorting categories. Current machine-learning schemes implement simulated neurons and synapses on standard computers based on a von Neumann architecture. This approach is inefficient in energy consumption, and thermal management, motivating the search for hardware-based systems that imitate the brain. Here, the present state of thermal management of neuromorphic computing technology and the challenges and opportunities of the energy-efficient implementation of neuromorphic devices are considered. The main features of brain-inspired computing and quantum materials for implementing neuromorphic devices are briefly described, the brain criticality and resistive switching-based neuromorphic devices are discussed, the energy and electrical considerations for spiking-based computation are presented, the fundamental features of the brain's thermal regulation are addressed, the physical mechanisms for thermal management and thermoelectric control of materials and neuromorphic devices are analyzed, and challenges and new avenues for implementing energy-efficient computing are described.
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Affiliation(s)
- Felipe Torres
- Physics Department, Faculty of Science, University of Chile, 653, Santiago, 7800024, Chile
- Center of Nanoscience and Nanotechnology (CEDENNA), Av. Ecuador 3493, Santiago, 9170124, Chile
| | - Ali C Basaran
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA, 92093, USA
| | - Ivan K Schuller
- Department of Physics and Center for Advanced Nanoscience, University of California San Diego, La Jolla, CA, 92093, USA
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23
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Haensch W, Raghunathan A, Roy K, Chakrabarti B, Phatak CM, Wang C, Guha S. Compute in-Memory with Non-Volatile Elements for Neural Networks: A Review from a Co-Design Perspective. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204944. [PMID: 36579797 DOI: 10.1002/adma.202204944] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2022] [Revised: 11/01/2022] [Indexed: 06/17/2023]
Abstract
Deep learning has become ubiquitous, touching daily lives across the globe. Today, traditional computer architectures are stressed to their limits in efficiently executing the growing complexity of data and models. Compute-in-memory (CIM) can potentially play an important role in developing efficient hardware solutions that reduce data movement from compute-unit to memory, known as the von Neumann bottleneck. At its heart is a cross-bar architecture with nodal non-volatile-memory elements that performs an analog multiply-and-accumulate operation, enabling the matrix-vector-multiplications repeatedly used in all neural network workloads. The memory materials can significantly influence final system-level characteristics and chip performance, including speed, power, and classification accuracy. With an over-arching co-design viewpoint, this review assesses the use of cross-bar based CIM for neural networks, connecting the material properties and the associated design constraints and demands to application, architecture, and performance. Both digital and analog memory are considered, assessing the status for training and inference, and providing metrics for the collective set of properties non-volatile memory materials will need to demonstrate for a successful CIM technology.
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Affiliation(s)
- Wilfried Haensch
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Anand Raghunathan
- Department of Electrical Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Kaushik Roy
- Department of Electrical Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Bhaswar Chakrabarti
- Department of Electrical Engineering, Indian Institute of Technology Madras, Chennai, Tamil Nadu, 600036, India
| | - Charudatta M Phatak
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Cheng Wang
- Department of Electrical Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Supratik Guha
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL, 60637, USA
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24
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Zhang L, Mei L, Wang K, Lv Y, Zhang S, Lian Y, Liu X, Ma Z, Xiao G, Liu Q, Zhai S, Zhang S, Liu G, Yuan L, Guo B, Chen Z, Wei K, Liu A, Yue S, Niu G, Pan X, Sun J, Hua Y, Wu WQ, Di D, Zhao B, Tian J, Wang Z, Yang Y, Chu L, Yuan M, Zeng H, Yip HL, Yan K, Xu W, Zhu L, Zhang W, Xing G, Gao F, Ding L. Advances in the Application of Perovskite Materials. NANO-MICRO LETTERS 2023; 15:177. [PMID: 37428261 PMCID: PMC10333173 DOI: 10.1007/s40820-023-01140-3] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Accepted: 05/29/2023] [Indexed: 07/11/2023]
Abstract
Nowadays, the soar of photovoltaic performance of perovskite solar cells has set off a fever in the study of metal halide perovskite materials. The excellent optoelectronic properties and defect tolerance feature allow metal halide perovskite to be employed in a wide variety of applications. This article provides a holistic review over the current progress and future prospects of metal halide perovskite materials in representative promising applications, including traditional optoelectronic devices (solar cells, light-emitting diodes, photodetectors, lasers), and cutting-edge technologies in terms of neuromorphic devices (artificial synapses and memristors) and pressure-induced emission. This review highlights the fundamentals, the current progress and the remaining challenges for each application, aiming to provide a comprehensive overview of the development status and a navigation of future research for metal halide perovskite materials and devices.
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Affiliation(s)
- Lixiu Zhang
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Luyao Mei
- School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, People's Republic of China
| | - Kaiyang Wang
- Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, 518055, People's Republic of China
| | - Yinhua Lv
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China
| | - Shuai Zhang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Yaxiao Lian
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Xiaoke Liu
- Department of Physics, Linköping University, 58183, Linköping, Sweden
| | - Zhiwei Ma
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People's Republic of China
| | - Guanjun Xiao
- State Key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People's Republic of China
| | - Qiang Liu
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, People's Republic of China
| | - Shuaibo Zhai
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, People's Republic of China
| | - Shengli Zhang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Gengling Liu
- School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, People's Republic of China
| | - Ligang Yuan
- School of Environment and Energy, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Bingbing Guo
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Ziming Chen
- Department of Chemistry, Imperial College London, London, W12 0BZ, UK
| | - Keyu Wei
- College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China
| | - Aqiang Liu
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Shizhong Yue
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
| | - Guangda Niu
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, People's Republic of China
| | - Xiyan Pan
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Jie Sun
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Yong Hua
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China
| | - Wu-Qiang Wu
- School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, People's Republic of China
| | - Dawei Di
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Baodan Zhao
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Jianjun Tian
- Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing, 100083, People's Republic of China
| | - Zhijie Wang
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
| | - Yang Yang
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, 310027, People's Republic of China
| | - Liang Chu
- School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, People's Republic of China
| | - Mingjian Yuan
- College of Chemistry, Nankai University, Tianjin, 300071, People's Republic of China
| | - Haibo Zeng
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Hin-Lap Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, 999077, People's Republic of China
| | - Keyou Yan
- School of Environment and Energy, South China University of Technology, Guangzhou, 510000, People's Republic of China
| | - Wentao Xu
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, People's Republic of China.
| | - Lu Zhu
- School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, People's Republic of China.
| | - Wenhua Zhang
- School of Materials Science and Engineering, Yunnan University, Kunming, 650091, People's Republic of China.
| | - Guichuan Xing
- Institute of Applied Physics and Materials Engineering, University of Macau, Macau, 999078, People's Republic of China.
| | - Feng Gao
- Department of Physics, Linköping University, 58183, Linköping, Sweden.
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China.
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25
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Li J, Qian Y, Li W, Yu S, Ke Y, Qian H, Lin YH, Hou CH, Shyue JJ, Zhou J, Chen Y, Xu J, Zhu J, Yi M, Huang W. Polymeric Memristor Based Artificial Synapses with Ultra-Wide Operating Temperature. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209728. [PMID: 36972150 DOI: 10.1002/adma.202209728] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2022] [Revised: 03/12/2023] [Indexed: 06/09/2023]
Abstract
Neuromorphic electronics, being inspired by how the brain works, hold great promise to the successful implementation of smart artificial systems. Among several neuromorphic hardware issues, a robust device functionality under extreme temperature is of particular importance for practical applications. Given that the organic memristors for artificial synapse applications are demonstrated under room temperature, achieving a robust device performance at extremely low or high temperature is still utterly challenging. In this work, the temperature issue is addressed by tuning the functionality of the solution-based organic polymeric memristor. The optimized memristor demonstrates a reliable performance under both the cryogenic and high-temperature environments. The unencapsulated organic polymeric memristor shows a robust memristive response under test temperature ranging from 77 to 573 K. Utilizing X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) depth profiling, the device working mechanism is unveiled by comparing the compositional profiles of the fresh and written organic polymeric memristors. A reversible ion migration induced by an applied voltage contributes to the characteristic switching behavior of the memristor. Herein, both the robust memristive response achieved at extreme temperatures and the verified device working mechanism will remarkably accelerate the development of memristors in neuromorphic systems.
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Affiliation(s)
- Jiayu Li
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Yangzhou Qian
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Wen Li
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Songcheng Yu
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Yunxin Ke
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Haowen Qian
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Yen-Hung Lin
- Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, 999077, P. R. China
| | - Cheng-Hung Hou
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - Jing-Jong Shyue
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - Jia Zhou
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Ye Chen
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Jiangping Xu
- Key Lab of Materials Chemistry for Energy Conversion & Storage of Ministry of Education, School of Chemistry & Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Jintao Zhu
- Key Lab of Materials Chemistry for Energy Conversion & Storage of Ministry of Education, School of Chemistry & Chemical Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China
| | - Mingdong Yi
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NUPT), Nanjing, 210023, P. R. China
- Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, Xi'an, 710072, P. R. China
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26
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Zhai S, Gong J, Feng Y, Que Z, Mao W, He X, Xie Y, Li X, Chu L. Multilevel resistive switching in stable all-inorganic n-i-p double perovskite memristor. iScience 2023; 26:106461. [PMID: 37091246 PMCID: PMC10119588 DOI: 10.1016/j.isci.2023.106461] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/19/2022] [Revised: 03/13/2023] [Accepted: 03/17/2023] [Indexed: 04/08/2023] Open
Abstract
Memristors are promising information storage devices for commercial applications because of their long endurance and low power consumption. Particularly, perovskite memristors have revealed excellent resistive switching (RS) properties owing to the fast ion migration and solution fabrication process. Here, an n-i-p type double perovskite memristor with "ITO/SnO2/Cs2AgBiBr6/NiOx/Ag" architecture was developed and demonstrated to reveal three resistance states because of the p-n junction electric field coupled with ion migration. The devices exhibited reliable filamentary with an on/off ratio exceeding 50. The RS characteristics remained unchanged after 1000 s read and 300 switching cycles. The synaptic functions were examined through long-term depression and potentiation measurements. Significantly, the device still worked after one year to reveal long-term stability because of the all-inorganic layers. This work indicates a novel idea for designing a multistate memristor by utilizing the p-n junction unidirectional conductivity during the forward and reverse scanning.
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Affiliation(s)
- Shuaibo Zhai
- School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Jiaqi Gong
- School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Yifei Feng
- School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Zhongbao Que
- School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Weiwei Mao
- School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Xuemin He
- School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
| | - Yannan Xie
- School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
- Corresponding author
| | - Xing’ao Li
- School of Electronic and Optical Engineering & School of Science & School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210023, China
- Corresponding author
| | - Liang Chu
- Institute of Carbon Neutrality and New Energy, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China
- The MOE Key Laboratory of Special Machine and High Voltage Apparatus, Shenyang University of Technology, Shenyang, 110870, China
- Corresponding author
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27
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Wang Y, Hong M, Venezuela J, Liu T, Dargusch M. Expedient secondary functions of flexible piezoelectrics for biomedical energy harvesting. Bioact Mater 2023; 22:291-311. [PMID: 36263099 PMCID: PMC9556936 DOI: 10.1016/j.bioactmat.2022.10.003] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/01/2022] [Revised: 10/01/2022] [Accepted: 10/03/2022] [Indexed: 11/22/2022] Open
Abstract
Flexible piezoelectrics realise the conversion between mechanical movements and electrical power by conformally attaching onto curvilinear surfaces, which are promising for energy harvesting of biomedical devices due to their sustainable body movements and/or deformations. Developing secondary functions of flexible piezoelectric energy harvesters is becoming increasingly significant in recent years via aiming at issues that cannot be addressed or mitigated by merely increasing piezoelectric efficiencies. These issues include loose interfacial contact and pucker generation by stretching, power shortage or instability induced by inadequate mechanical energy, and premature function degeneration or failure caused by fatigue fracture after cyclic deformations. Herein, the expedient secondary functions of flexible piezoelectrics to mitigate above issues are reviewed, including stretchability, hybrid energy harvesting, and self-healing. Efforts have been devoted to understanding the state-of-the-art strategies and their mechanisms of achieving secondary functions based on piezoelectric fundamentals. The link between structural characteristic and function performance is unravelled by providing insights into carefully selected progresses. The remaining challenges of developing secondary functions are proposed in the end with corresponding outlooks. The current work hopes to help and inspire future research in this promising field focusing on developing the secondary functions of flexible piezoelectric energy harvesters.
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Affiliation(s)
- Yuan Wang
- Centre for Advanced Materials Processing and Manufacturing (AMPAM), The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Min Hong
- Centre for Future Materials, University of Southern Queensland, Springfield, Queensland, 4300, Australia
| | - Jeffrey Venezuela
- Centre for Advanced Materials Processing and Manufacturing (AMPAM), The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Ting Liu
- Centre for Advanced Materials Processing and Manufacturing (AMPAM), The University of Queensland, Brisbane, Queensland, 4072, Australia
| | - Matthew Dargusch
- Centre for Advanced Materials Processing and Manufacturing (AMPAM), The University of Queensland, Brisbane, Queensland, 4072, Australia
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28
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Kumavat SR, Sonvane Y. Lead-free 2D MASnBr 3 and Ruddlesden-Popper BA 2MASn 2Br 7 as light harvesting materials. RSC Adv 2023; 13:7939-7951. [PMID: 36909767 PMCID: PMC9997451 DOI: 10.1039/d3ra00108c] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/06/2023] [Accepted: 02/28/2023] [Indexed: 03/11/2023] Open
Abstract
We have explored the structural, electronic, charge transport, and optical properties of lead-free 2D hybrid halide perovskites, MASnBr3 and Ruddlesden-Popper perovskites, BAMASn2Br7 monolayers. Under density functional theory (DFT) calculation, we applied mechanical strain, i.e., tensile and compressive strain up to 10% in both cases. The mechanical strain engineering technique is useful for a tuned bandgap of 2D MASnBr3 and 2D BAMASn2Br7. The calculated carrier mobility for the electron is 404 cm2 V-1 s-1 and for the hole is up to 800 cm2 V-1 s-1 for MASnBr3. For BAMASn2Br7 the highest carrier mobility is up to 557 cm2 V-1 s-1 for electrons and up to 779 cm2 V-1 s-1 for the hole, which is 14% and 24% higher than the reported lead-iodide based perovskites, respectively. The calculated solar cell efficiency of 2D MASnBr3 is 23.46%, which is 18% higher than the reported lead-based perovskites. Furthermore, the optical activity of the 2D MASnBr3 and 2D BAMASn2Br7 shows a high static dielectric constant of 2.48 and 2.14, respectively. This is useful to show nanodevice performance. Also, 2D MASNBr3 shows a high absorption coefficient of 15.25 × 105 cm-1 and 2D BAMASn2Br7 shows an absorption coefficient of up to 13.38 × 105 cm-1. Therefore our theoretical results suggest that the systems are under mechanical strain engineering. This is convenient for experimentalists to improve the performance of the 2D perovskites. The study supports these materials as good candidates for photovoltaic and optoelectronic device applications.
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Affiliation(s)
- Sandip R Kumavat
- Advanced Materials Lab, Department of Physics, Sardar Vallabhbhai National Institute of Technology Surat 395007 India
| | - Yogesh Sonvane
- Advanced Materials Lab, Department of Physics, Sardar Vallabhbhai National Institute of Technology Surat 395007 India
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29
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Lanza M, Hui F, Wen C, Ferrari AC. Resistive Switching Crossbar Arrays Based on Layered Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205402. [PMID: 36094019 DOI: 10.1002/adma.202205402] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2022] [Revised: 08/25/2022] [Indexed: 06/15/2023]
Abstract
Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>108 devices mm- 2 ) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices compared to traditional phase-change materials and metal oxides is that their electrical properties can be adjusted with a higher precision. Here, the key figures-of-merit and procedures to implement LM-based RS devices are defined. LM-based RS devices fabricated using methods compatible with industry are identified and discussed. The focus is on small devices (size < 9 µm2 ) arranged in crossbar structures, since larger devices may be affected by artifacts, such as grain boundaries and flake junctions. How to enhance device performance, so to accelerate the development of this technology, is also discussed.
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Affiliation(s)
- Mario Lanza
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Fei Hui
- School of Materials Science and Engineering, The Key Laboratory of Material, Processing and Mold of the Ministry of Education, Henan Key Laboratory of Advanced, Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Chao Wen
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
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Yan X, Zhao Y, Cao G, Li X, Gao C, Liu L, Ahmed S, Altaf F, Tan H, Ma X, Xie Z, Zhang H. 2D Organic Materials: Status and Challenges. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2203889. [PMID: 36683257 PMCID: PMC9982583 DOI: 10.1002/advs.202203889] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/07/2022] [Revised: 10/31/2022] [Indexed: 06/17/2023]
Abstract
In the past few decades, 2D layer materials have gradually become a central focus in materials science owing to their uniquely layered structural qualities and good optoelectronic properties. However, in the development of 2D materials, several disadvantages, such as limited types of materials and the inability to synthesize large-scale materials, severely confine their application. Therefore, further exploration of new materials and preparation methods is necessary to meet technological developmental needs. Organic molecular materials have the advantage of being customizable. Therefore, if organic molecular and 2D materials are combined, the resulting 2D organic materials would have excellent optical and electrical properties. In addition, through this combination, the free design and large-scale synthesis of 2D materials can be realized in principle. Furthermore, 2D organic materials exhibit excellent properties and unique functionalities along with great potential for developing sensors, biomedicine, and electronics. In this review, 2D organic materials are divided into five categories. The preparation methods and material properties of each class of materials are also described in detail. Notably, to comprehensively understand each material's advantages, the latest research applications for each material are presented in detail and summarized. Finally, the future development and application prospects of 2D organic materials are briefly discussed.
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Affiliation(s)
- Xiaobing Yan
- School of Life Sciences, Institute of Life Science and Green Development, Key Laboratory of Brain‐Like Neuromorphic Devices and Systems of Hebei ProvinceCollege of Electronic and Information EngineeringHebei UniversityBaoding071002China
| | - Ying Zhao
- School of Life Sciences, Institute of Life Science and Green Development, Key Laboratory of Brain‐Like Neuromorphic Devices and Systems of Hebei ProvinceCollege of Electronic and Information EngineeringHebei UniversityBaoding071002China
| | - Gang Cao
- School of Life Sciences, Institute of Life Science and Green Development, Key Laboratory of Brain‐Like Neuromorphic Devices and Systems of Hebei ProvinceCollege of Electronic and Information EngineeringHebei UniversityBaoding071002China
| | - Xiaoyu Li
- School of Life Sciences, Institute of Life Science and Green Development, Key Laboratory of Brain‐Like Neuromorphic Devices and Systems of Hebei ProvinceCollege of Electronic and Information EngineeringHebei UniversityBaoding071002China
| | - Chao Gao
- School of Life Sciences, Institute of Life Science and Green Development, Key Laboratory of Brain‐Like Neuromorphic Devices and Systems of Hebei ProvinceCollege of Electronic and Information EngineeringHebei UniversityBaoding071002China
| | - Luan Liu
- School of Life Sciences, Institute of Life Science and Green Development, Key Laboratory of Brain‐Like Neuromorphic Devices and Systems of Hebei ProvinceCollege of Electronic and Information EngineeringHebei UniversityBaoding071002China
| | - Shakeel Ahmed
- Collaborative Innovation Center for Optoelectronic Science and TechnologyInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationInstitute of Microscale OptoelectronicsCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
| | - Faizah Altaf
- Department of ChemistryWomen University Bagh Azad KashmirBagh Azad KashmirBagh12500Pakistan
- School of Materials Science and EngineeringGeorgia Institute of Technology North AvenueAtlantaGA30332USA
| | - Hui Tan
- Department of RespiratoryShenzhen Children's HospitalShenzhen518036P. R. China
| | - Xiaopeng Ma
- Department of RespiratoryShenzhen Children's HospitalShenzhen518036P. R. China
| | - Zhongjian Xie
- Institute of PediatricsShenzhen Children's HospitalShenzhenGuangdong518038P. R. China
- Shenzhen International Institute for Biomedical ResearchShenzhenGuangdong518116China
| | - Han Zhang
- Collaborative Innovation Center for Optoelectronic Science and TechnologyInternational Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of EducationInstitute of Microscale OptoelectronicsCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060P. R. China
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Yu S, Tian A, Lu Q, Xu X, Ma S, Wang X, Wang Z. Polyoxometalate-Viologen Thermochromic Hybrids for Organic Amine Detectors and Memristors with Temperature-Regulating Resistance Switching Characteristics. Inorg Chem 2023; 62:1549-1560. [PMID: 36637247 DOI: 10.1021/acs.inorgchem.2c03746] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023]
Abstract
There are relatively few reports on the combination of viologen and polyoxometalates (POMs). Herein, we successfully synthesized three viologen-POM-based compounds by in situ transformation of ligands under hydrothermal conditions, namely, {MII(1,4-cby)2[H2(γ-Mo8O26)]}·nH2O (1: M = Ni, n = 4; 2: M = Co, n = 6), and [NiII(1,3-cby)(H2O)4(β-Mo8O26)0.5]·2H2O (3) (1,4-cby·Cl = 1-(4-carboxy-benzyl)-[4,4']bipyridinyl-1-ium, 1,3-cby·Cl = 1-(3-carboxy-benzyl)-[4,4']bipyridinyl-1-ium). Isostructural compounds 1 and 2 exhibit two-dimensional (2D) layer structures with POMs as linking nodes, while compound 3 shows a one-dimensional (1D) metal-organic chain with dissociative POM anions. When the temperature increases, compounds 1-3 show good reversible thermochromism properties and also have a fluorescence quenching effect. Moreover, compounds 1-3 can also be used as detectors for organic amines, especially in the atmosphere of ammonia, ethylenediamine, and diethylamine with an obvious discoloration effect. In addition, compound 1 was used as a material for the preparation of memristors with superior properties (distinct temperature-adjusted resistive switching properties). It shows bipolar resistive switching (RS) behavior at different temperatures of 20, 50, and 100 °C. The results show that the 1-based memristor has good thermal stability, which is important for high-temperature environment applications. It also shows that crystalline viologen-POM-based compounds are ideal candidates for making memristors.
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Affiliation(s)
- Shuang Yu
- College of Chemistry and Materials Engineering, Bohai University, Jinzhou 121013, P. R. China
| | - Aixiang Tian
- College of Chemistry and Materials Engineering, Bohai University, Jinzhou 121013, P. R. China
| | - Qinghai Lu
- College of Chemistry and Materials Engineering, Bohai University, Jinzhou 121013, P. R. China
| | - Xi Xu
- College of Chemistry and Materials Engineering, Bohai University, Jinzhou 121013, P. R. China
| | - Shufang Ma
- College of Chemistry and Materials Engineering, Bohai University, Jinzhou 121013, P. R. China
| | - Xiuli Wang
- College of Chemistry and Materials Engineering, Bohai University, Jinzhou 121013, P. R. China
| | - Zhongqiang Wang
- Center for Advanced Optoelectronic Functional Materials Research, Key Laboratory to UV Light-Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun 130024, P. R. China
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Yun G, Cole T, Zhang Y, Zheng J, Sun S, Ou-yang Y, Shu J, Lu H, Zhang Q, Wang Y, Pham D, Hasan T, Li W, Zhang S, Tang SY. Electro-mechano responsive elastomers with self-tunable conductivity and stiffness. SCIENCE ADVANCES 2023; 9:eadf1141. [PMID: 36696510 PMCID: PMC9876544 DOI: 10.1126/sciadv.adf1141] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/29/2022] [Accepted: 12/27/2022] [Indexed: 06/17/2023]
Abstract
Materials with programmable conductivity and stiffness offer new design opportunities for next-generation engineered systems in soft robotics and electronic devices. However, existing approaches fail to harness variable electrical and mechanical properties synergistically and lack the ability to self-respond to environmental changes. We report an electro-mechano responsive Field's metal hybrid elastomer exhibiting variable and tunable conductivity, strain sensitivity, and stiffness. By synergistically harnessing these properties, we demonstrate two applications with over an order of magnitude performance improvement compared to state-of-the-art, including a self-triggered multiaxis compliance compensator for robotic manipulators, and a resettable, highly compact, and fast current-limiting fuse with an adjustable fusing current. We envisage that the extraordinary electromechanical properties of our hybrid elastomer will bring substantial advancements in resilient robotic systems, intelligent instruments, and flexible electronics.
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Affiliation(s)
- Guolin Yun
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei, China
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Department of Electronic, Electrical, and Systems Engineering, University of Birmingham, Birmingham, UK
| | - Tim Cole
- Department of Electronic, Electrical, and Systems Engineering, University of Birmingham, Birmingham, UK
| | - Yuxin Zhang
- Department of Electronic, Electrical, and Systems Engineering, University of Birmingham, Birmingham, UK
| | - Jiahao Zheng
- Department of Electronic, Electrical, and Systems Engineering, University of Birmingham, Birmingham, UK
| | - Shuaishuai Sun
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei, China
| | - Yiming Ou-yang
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei, China
| | - Jian Shu
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei, China
| | - Hongda Lu
- School of Mechanical, Materials, Mechatronic, and Biomedical Engineering, University of Wollongong, Wollongong, Australia
| | - Qingtian Zhang
- School of Mechanical, Materials, Mechatronic, and Biomedical Engineering, University of Wollongong, Wollongong, Australia
| | - Yongjing Wang
- Department of Mechanical Engineering, University of Birmingham, Birmingham, UK
| | - Duc Pham
- Department of Mechanical Engineering, University of Birmingham, Birmingham, UK
| | - Tawfique Hasan
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
| | - Weihua Li
- School of Mechanical, Materials, Mechatronic, and Biomedical Engineering, University of Wollongong, Wollongong, Australia
| | - Shiwu Zhang
- CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei, China
| | - Shi-Yang Tang
- Department of Electronic, Electrical, and Systems Engineering, University of Birmingham, Birmingham, UK
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Kang K, Niu W, Zhang Y, Li A, Zou X, Hu W. Dual Resistive Switching Performance Derived from Ionic Migration in Halide Perovskite Based Memory. J Phys Chem Lett 2023; 14:347-353. [PMID: 36606717 DOI: 10.1021/acs.jpclett.2c03676] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Herein, we report an environmentally stable and friendly halide perovskite based resistive random access memory device with an Ag/PMMA/(PMA)2CuBr4/FTO (PMMA = poly(methyl methacrylate); PMA = C6H5CH2NH3) architecture. The device exhibits the coexistence of two bipolar resistive switching modes, including counterclockwise and clockwise switching characteristics. The devices with both switching modes show stable endurance (>100 cycles) and long retention performance (>104 s). By applying a suitable electrical stimulation, the counterclockwise and clockwise switching behaviors are interconvertible. Furthermore, the Au/PMMA/(PMA)2CuBr4/FTO and Ag/(PMA)2CuBr4/FTO devices were fabricated to verify the origin of dual resistive switching behaviors. The similar dual resistive switching behaviors after electroforming processes of three types of memory devices suggest that the interconvertible dual resistive switching characteristics could be attributed to the ionic migration in the (PMA)2CuBr4 perovskite layer.
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Affiliation(s)
- Kaijin Kang
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Wen Niu
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Yanming Zhang
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Anlin Li
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Xingze Zou
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
| | - Wei Hu
- Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China
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Huang CY, Li H, Wu Y, Lin CH, Guan X, Hu L, Kim J, Zhu X, Zeng H, Wu T. Inorganic Halide Perovskite Quantum Dots: A Versatile Nanomaterial Platform for Electronic Applications. NANO-MICRO LETTERS 2022; 15:16. [PMID: 36580150 PMCID: PMC9800676 DOI: 10.1007/s40820-022-00983-6] [Citation(s) in RCA: 26] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/05/2022] [Accepted: 10/31/2022] [Indexed: 05/19/2023]
Abstract
Metal halide perovskites have generated significant attention in recent years because of their extraordinary physical properties and photovoltaic performance. Among these, inorganic perovskite quantum dots (QDs) stand out for their prominent merits, such as quantum confinement effects, high photoluminescence quantum yield, and defect-tolerant structures. Additionally, ligand engineering and an all-inorganic composition lead to a robust platform for ambient-stable QD devices. This review presents the state-of-the-art research progress on inorganic perovskite QDs, emphasizing their electronic applications. In detail, the physical properties of inorganic perovskite QDs will be introduced first, followed by a discussion of synthesis methods and growth control. Afterwards, the emerging applications of inorganic perovskite QDs in electronics, including transistors and memories, will be presented. Finally, this review will provide an outlook on potential strategies for advancing inorganic perovskite QD technologies.
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Affiliation(s)
- Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Hanchen Li
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Ye Wu
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Jiyun Kim
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Xiaoming Zhu
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics and Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, People's Republic of China.
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales, Sydney, 2052, Australia.
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Velpula RT, Jain B, Nguyen HPT. Low-power multilevel resistive switching in β-Ga 2O 3based RRAM devices. NANOTECHNOLOGY 2022; 34:075201. [PMID: 36399780 DOI: 10.1088/1361-6528/aca418] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/12/2022] [Accepted: 11/18/2022] [Indexed: 06/16/2023]
Abstract
In this study, multilevel switching at low-power in Ti/TiN/Ga2O3/Ti/Pt resistive random-access memory (RRAM) devices has been systematically studied. The fabricated RRAM device exhibits an excellent non-overlapping window between set and reset voltages of ∼1.1 V with a maximumRoff/Ronratio of ∼103. Moreover, to the best of our knowledge, the multi-bit storage capability of these RRAM devices with a reasonably highRoff/Ronratio is experimentally demonstrated, for the first time, for lower compliance currents at 10μA, 20μA and 50μA. The multi-bit resistive switching behavior of the Ga2O3RRAM device at a low compliance current paves the way for low-power and high-density data storage applications.
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Affiliation(s)
- Ravi Teja Velpula
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, NJ, 07102, United States of America
| | - Barsha Jain
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, NJ, 07102, United States of America
| | - Hieu Pham Trung Nguyen
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, 323 Dr Martin Luther King Jr Boulevard, Newark, NJ, 07102, United States of America
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36
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Li D, Dong X, Cheng P, Song L, Wu Z, Chen Y, Huang W. Metal Halide Perovskite/Electrode Contacts in Charge-Transporting-Layer-Free Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203683. [PMID: 36319474 PMCID: PMC9798992 DOI: 10.1002/advs.202203683] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Revised: 09/13/2022] [Indexed: 06/16/2023]
Abstract
Metal halide perovskites have drawn substantial interest in optoelectronic devices in the past decade. Perovskite/electrode contacts are crucial for constructing high-performance charge-transporting-layer-free perovskite devices, such as solar cells, field-effect transistors, artificial synapses, memories, etc. Many studies have evidenced that the perovskite layer can directly contact the electrodes, showing abundant physicochemical, electronic, and photoelectric properties in charge-transporting-layer-free perovskite devices. Meanwhile, for perovskite/metal contacts, some critical interfacial physical and chemical processes are reported, including band bending, interface dipoles, metal halogenation, and perovskite decomposition induced by metal electrodes. Thus, a systematic summary of the role of metal halide perovskite/electrode contacts on device performance is essential. This review summarizes and discusses charge carrier dynamics, electronic band engineering, electrode corrosion, electrochemical metallization and dissolution, perovskite decomposition, and interface engineering in perovskite/electrode contacts-based electronic devices for a comprehensive understanding of the contacts. The physicochemical, electronic, and morphological properties of various perovskite/electrode contacts, as well as relevant engineering techniques, are presented. Finally, the current challenges are analyzed, and appropriate recommendations are put forward. It can be expected that further research will lead to significant breakthroughs in their application and promote reforms and innovations in future solid-state physics and materials science.
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Affiliation(s)
- Deli Li
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
- Fujian cross Strait Institute of Flexible Electronics (Future Technologies)Fujian Normal UniversityFuzhou350117P. R. China
| | - Xue Dong
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
| | - Peng Cheng
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
| | - Lin Song
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
| | - Zhongbin Wu
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
| | - Yonghua Chen
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM)Nanjing Tech University30 South Puzhu RoadNanjingJiangsu211816P. R. China
| | - Wei Huang
- Frontiers Science Center for Flexible ElectronicsXi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and EngineeringNorthwestern Polytechnical University127 West Youyi RoadXi'an710072P. R. China
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM)Nanjing Tech University30 South Puzhu RoadNanjingJiangsu211816P. R. China
- Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced MaterialsNanjing University of Posts and TelecommunicationsNanjing210023P. R. China
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George T, Murugan AV. Improved Performance of the Al 2O 3-Protected HfO 2-TiO 2 Base Layer with a Self-Assembled CH 3NH 3PbI 3 Heterostructure for Extremely Low Operating Voltage and Stable Filament Formation in Nonvolatile Resistive Switching Memory. ACS APPLIED MATERIALS & INTERFACES 2022; 14:51066-51083. [PMID: 36397313 DOI: 10.1021/acsami.2c13478] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Herein, we report intriguing observations of an extremely stable nonvolatile bipolar resistive switching (NVBRS) memory device fabricated using HfO2-TiO2 topologically protected by Al2O3 as a stacked base layer for a CH3NH3PbI3 (MAPI) electrolyte layer sandwiched between Ag and fluorine-doped tin oxide (FTO) electrodes. MAPI has been successfully synthesized by a rapid microwave-solvothermal (MW-ST) method within 10 min at 120 °C without requiring any inert gas atmosphere using low-cost precursors and solvents. Subsequently, MAPI powders are dissolved in aprotic solvents (DMF/DMSO = 8:2), and a spin-coated thin film is allowed to recrystallize upon annealing at 120 °C via a solution-based nanoscale self-assembly process. The fabricated memory device with the Ag/MAPI/Al2O3/TiO2-HfO2/FTO configuration shows an enhanced resistance ratio of 105 for >104 s at an extremely lower operating voltage (SET +0.2 V, RESET -0.2 V) when compared to that of the pristine MAPI device (±1 V, 102, 104 s). We show that the memory device also exhibits a remarkable endurance of ≥3500 cycles due to the Al2O3 robust coating on the HfO2-TiO2 layer, facilitating prompt heterojunction formation. Thus, the adopted innovative strategies to prepare structurally and optically stable (∼1.5 years) MAPI under high-humid conditions could offer enhanced performance of NVBRS memory devices for medical, security, internet of things (IoT), and artificial intelligence (AI) applications.
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Affiliation(s)
- Twinkle George
- Advanced Functional Nanomaterials Research Laboratory, Centre for Nanoscience and Technology, Madanjeet School of Green Energy Technologies, Pondicherry University (A Central University), Dr. R. Vankataraman Nagar, Kalapet, Puducherry605014, India
| | - Arumugam Vadivel Murugan
- Advanced Functional Nanomaterials Research Laboratory, Centre for Nanoscience and Technology, Madanjeet School of Green Energy Technologies, Pondicherry University (A Central University), Dr. R. Vankataraman Nagar, Kalapet, Puducherry605014, India
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Shen J, Guan P, Jiang A, Fan W, Li S, Liu Y, Xu S, Cao S. A Polyanionic Strategy to Modify the Perovskite Grain Boundary for a Larger Switching Ratio in Flexible Woven Resistive Random-Access Memories. ACS APPLIED MATERIALS & INTERFACES 2022; 14:44652-44664. [PMID: 36125291 DOI: 10.1021/acsami.2c10562] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The intergranular interface modification of organic-inorganic hybrid perovskites (OHP) is an important issue to regulate the flexibility, stability, and resistive switching (RS) performance of resistive random-access memories (RRAMs). A novel strategy of polymer additives for OHP intergranular interface modification is explored in this work with the polyanionic backbone to improve the distribution of cage-shaped cavity molecules at the perovskite grain boundaries. Specifically speaking, poly(1-adamantylammonium acrylate) (PADAm) is first synthesized through the acid-base reaction of polyacrylic acid with 1-adamantylamine to simultaneously realize the introduction of a cage-shaped cavity molecule and the polyanionic backbone. Herein, organic ammonium cations 1-adamantylammonium (ADNH3+) in PADAm are applied as the cage-shaped cavity molecules to tune the dielectric property by being anchored at the perovskite grain boundaries. Meanwhile, polyacrylic anions in PADAm play the role of the polyanionic backbone to produce the more uniform distribution of ADNH3+. Simultaneously, the flexibility and stability of OHP RRAM devices are also improved due to the introduction of the polyanionic backbone. Consequently, the 4% ADNH3I-modified planar device exhibits the stable nonvolatile RS behavior with an on/off ratio of ∼104, even with one-month exposure under an ambient environment. Importantly, the introduction of PADAm in the flexible fibrous crosspoint of functional fiber Al@MAPbI3:PADAm and bare Al fiber further increases the on/off ratio to 108 due to the effectively improved distribution of hollow cage-shaped ADNH3+ at the perovskite intergranular interfaces together with the application of the fibrous crosspoint device configuration. Especially, these excellent crosspoint RRAM devices can be integrated into the woven fibrous RRAM array in the thermal plastic packaging configuration. In addition, the excellent multilevel RS behavior can also be realized in the woven fibrous RRAM array, indicating potential high-density data storage. This work provides a novel strategy of polymer additives bearing the polyanionic backbone to improve the flexibility, stability, and RS performance of perovskite RRAM devices.
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Affiliation(s)
- Junqing Shen
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Ping Guan
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Aiyun Jiang
- Huanghe Science and Technology College, Zhengzhou, Henan 450063, People's Republic of China
| | - Wentao Fan
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Shengnan Li
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Yingliang Liu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Shengang Xu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, People's Republic of China
| | - Shaokui Cao
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, People's Republic of China
- Huanghe Science and Technology College, Zhengzhou, Henan 450063, People's Republic of China
- Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, People's Republic of China
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Guan X, Lei Z, Yu X, Lin CH, Huang JK, Huang CY, Hu L, Li F, Vinu A, Yi J, Wu T. Low-Dimensional Metal-Halide Perovskites as High-Performance Materials for Memory Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2203311. [PMID: 35989093 DOI: 10.1002/smll.202203311] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Revised: 07/05/2022] [Indexed: 06/15/2023]
Abstract
Metal-halide perovskites have drawn profuse attention during the past decade, owing to their excellent electrical and optical properties, facile synthesis, efficient energy conversion, and so on. Meanwhile, the development of information storage technologies and digital communications has fueled the demand for novel semiconductor materials. Low-dimensional perovskites have offered a new force to propel the developments of the memory field due to the excellent physical and electrical properties associated with the reduced dimensionality. In this review, the mechanisms, properties, as well as stability and performance of low-dimensional perovskite memories, involving both molecular-level perovskites and structure-level nanostructures, are comprehensively reviewed. The property-performance correlation is discussed in-depth, aiming to present effective strategies for designing memory devices based on this new class of high-performance materials. Finally, the existing challenges and future opportunities are presented.
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Affiliation(s)
- Xinwei Guan
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Zhihao Lei
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Xuechao Yu
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nanotech and Nano-bionics, Chinese Academy of Science, 398 Ruoshui Road, Suzhou, 215123, China
| | - Chun-Ho Lin
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Jing-Kai Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Chien-Yu Huang
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Long Hu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
| | - Feng Li
- School of Physics, Nano Institute, ACMM, The University of Sydney, Sydney, New South Wales, 2006, Australia
| | - Ajayan Vinu
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Jiabao Yi
- Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, New South Wales, 2308, Australia
| | - Tom Wu
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, New South Wales, 2052, Australia
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40
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Gou R, Ouyang Z, Xu C, He S, Cheng S, Shi C, Zhao J, Xiao Y, Lei S, Cheng B. Actual origin and precise control of asymmetrical hysteresis in an individual CH 3NH 3PbI 3 micro/nanowire for optical memory and logic operation. NANOSCALE HORIZONS 2022; 7:1095-1108. [PMID: 35913084 DOI: 10.1039/d2nh00209d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Although CH3NH3PbI3 can present an excellent photoresponse to visible light, its application in solar cells and photodetectors is seriously hindered due to hysteresis behaviour. Moreover, for its origin, there exist different opinions. Herein, we demonstrate a route to realize precise control for the electrical transport of a single CH3NH3PbI3 micro/nanowire by constructing a two-terminal device with asymmetric Ag and C electrodes, and its hysteresis can be clearly identified as a synergistic effect of the redox reaction at the interface of the Ag electrode and the injection and ejection of holes in the interfacial traps of the C electrode rather than its bulk effect. The device can show superior bias amplitude and illumination intensity dependence of hysteresis loops with typical bipolar resistive switching features. Thus, an excellent multilevel nonvolatile optical memory can be effectively realized by the modulation of the illumination and bias, and moreover a logic OR gate operation can be successfully implemented with voltage and illumination as input signals as well. This work clearly reveals and provides a new insight of hysteresis origin that can be attributed to a synergistic effect of two asymmetrical electrode interfaces, and therefore precisely controlling its electrical transport to realize an outstanding application potential in multifunctional devices integrated with optical nonvolatile memory and logic OR gate operation.
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Affiliation(s)
- Runna Gou
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Zhiyong Ouyang
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
| | - Changsen Xu
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
| | - Song He
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Shouduan Cheng
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Cencen Shi
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
| | - Jie Zhao
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Yanhe Xiao
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Shuijin Lei
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
| | - Baochang Cheng
- School of Physics and Materials, Nanchang University, Jiangxi, 330031, P. R. China.
- Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Jiangxi, 330031, P. R. China
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41
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Yun J, Kim D. Unraveling the Role of Polydopamines in Resistive Switching in Al/Polydopamine/Al Structure for Organic Resistive Random-Access Memory. Polymers (Basel) 2022; 14:polym14152995. [PMID: 35893959 PMCID: PMC9332170 DOI: 10.3390/polym14152995] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/16/2022] [Revised: 07/06/2022] [Accepted: 07/21/2022] [Indexed: 12/02/2022] Open
Abstract
In an era of rapidly evolving artificial intelligence and 5G communications technologies, massive data storage and processing are required for the real-time operation of digital processors in conventional wearable devices. However, classical von-Neumann architecture computers are limited by bottleneck-related issues. As a solution, resistive random-access memory (RRAM) devices are being considered as next generation in-memory computing devices. Among various materials, a polydopamine (PDA) is an attractive candidate for the fabrication of wearable and flexible RRAM devices. Herein, an aluminum/PDA/aluminum structure is proposed to investigate the influence of the PDA layer on resistive switching. The resistance-switching characteristics of an Al/PDA/Al structure are investigated by changing the PDA’s coating time and an on/off ratio of 2.48 × 103 is recorded. X-ray photoelectron spectroscopy reveals the presence of an Al2O3 layer in Al/PDA/Al structure, and the contents of oxygen vacancies are changed according to PDA coating time. Conductive filaments in the PDA/Al structure are confirmed by conductive atomic-force microscopy. As an application, a flexible Al/PDA/Al structure is fabricated using polyethylene terephthalate substrate and its operation is successfully confirmed. These results describe the resistive-switching characteristics, including oxygen vacancies, of Al/PDA/Al structures and provide new ways of understanding the resistive-switching mechanism of PDA-based RRAM devices.
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Affiliation(s)
- Jonghyeon Yun
- Department of Electronics and Information Convergence Engineering, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin 17104, Korea;
- Institute for Wearable Convergence Electronics, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin 17104, Korea
| | - Daewon Kim
- Institute for Wearable Convergence Electronics, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin 17104, Korea
- Department of Electronic Engineering, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin 17104, Korea
- Correspondence:
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42
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Park Y, Lee JS. Metal Halide Perovskite-Based Memristors for Emerging Memory Applications. J Phys Chem Lett 2022; 13:5638-5647. [PMID: 35708321 DOI: 10.1021/acs.jpclett.2c01303] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
There is an increased demand for next-generation memory devices with high density and fast operation speed to replace conventional memory devices. Memristors are promising candidates for next-generation memory devices because of their scalability, stable data retention, low power consumption, and fast operation. Among the various types of memristors, halide perovskites exhibit potential as emerging materials for memristors by using hysteresis based on the movement of defects or ions in halide perovskites. However, research on the implementation of perovskite materials as memristors is in its early stages; some challenges and problems must be solved to enable the practical application of halide perovskites for next-generation memory devices. From this perspective, we highlight the recent progress in memristors that use halide perovskites. Moreover, we introduce a strategy to enhance the performance and analyze the operation mechanism of memory devices that use halide perovskites. Finally, we summarize the challenges in the development of device technology to use halide perovskites in next-generation memory devices.
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Affiliation(s)
- Youngjun Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
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43
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Deswal S, Panday R, Naphade DR, Dixit P, Praveenkumar B, Zaręba JK, Anthopoulos TD, Ogale S, Boomishankar R. Efficient Piezoelectric Energy Harvesting from a Discrete Hybrid Bismuth Bromide Ferroelectric Templated by Phosphonium Cation. Chemistry 2022; 28:e202200751. [PMID: 35357732 DOI: 10.1002/chem.202200751] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Indexed: 12/12/2022]
Abstract
Bismuth containing hybrid molecular ferroelectrics are receiving tremendous attention in recent years owing to their stable and non-toxic composition. However, these perovskite-like structures are primarily limited to ammonium cations. Herein, we report a new phosphonium based discrete perovskite-like hybrid ferroelectric with a formula [Me(Ph)3 P]3 [Bi2 Br9 ] (MTPBB) and its mechanical energy harvesting capability. The Polarization-Electric field (P-E) measurements resulted in a well-defined ferroelectric hysteresis loop with a remnant polarization value of 2.1 μC cm-2 . Piezoresponse force microscopy experiments enabled visualization of the ferroelectric domain structure and evaluation of the piezoelectric strain coefficient (d33 ) for an MTPBB single crystal and thin film sample. Furthermore, flexible devices incorporating MTPBB in polydimethylsiloxane (PDMS) matrix at various concentrations were fabricated and explored for their mechanical energy harvesting properties. The champion device with 20 wt % of MTPBB in PDMS rendered a maximum peak-to-peak open-circuit voltage of 22.9 V and a maximum power density of 7 μW cm-2 at an optimal load of 4 MΩ. Moreover, the potential of MTPBB-based devices in low power electronics was demonstrated by storing the harvested energy in various electrolytic capacitors.
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Affiliation(s)
- Swati Deswal
- Department of Chemistry and Centre for Energy Science, Indian Institute of Science Education and Research, Pune, Dr. Homi Bhabha Road, Pune, 411008, India
| | - Rishukumar Panday
- Department of Chemistry and Centre for Energy Science, Indian Institute of Science Education and Research, Pune, Dr. Homi Bhabha Road, Pune, 411008, India
| | - Dipti R Naphade
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabia
| | - Prashant Dixit
- PZT Centre, Armament Research and Development Establishment, Dr. Homi Bhabha Road, Pune, 411021, India
| | - Balu Praveenkumar
- PZT Centre, Armament Research and Development Establishment, Dr. Homi Bhabha Road, Pune, 411021, India
| | - Jan K Zaręba
- Advanced Materials Engineering and Modeling Group, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370, Wroclaw, Poland
| | - Thomas D Anthopoulos
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal, 23955-6900, Saudi Arabia
| | - Satishchandra Ogale
- Department of Physics and Centre for Energy Science, Indian Institute of Science Education and Research, Pune, Dr. Homi Bhabha Road, Pune, 411008, India.,Research Institute for Sustainable Energy (RISE), TCG Centres for Research and Education in Science and Technology (TCG-CREST), Salt Lake, Kolkata, 700091, India
| | - Ramamoorthy Boomishankar
- Department of Chemistry and Centre for Energy Science, Indian Institute of Science Education and Research, Pune, Dr. Homi Bhabha Road, Pune, 411008, India
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44
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Ge S, Huang LB, Pan C. Halide perovskite single crystals for resistive switching. Sci Bull (Beijing) 2022; 67:1018-1021. [PMID: 36546244 DOI: 10.1016/j.scib.2022.02.001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
Affiliation(s)
- Shuaipeng Ge
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China
| | - Long-Biao Huang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
| | - Caofeng Pan
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China; CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China; School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing 100049, China.
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45
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Defect Healing of MAPbI3 Perovskite Single Crystal Surface by Benzylamine. Symmetry (Basel) 2022. [DOI: 10.3390/sym14061099] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022] Open
Abstract
Controlling the surface traps in metal halide perovskites (MHPs) is essential for device performance, stability, and commercialization. Here, a facile approach is introduced to passivate the methylammonium lead iodide (MAPbI3) perovskite single crystal (PSC) surface defects by benzylamine (BA) ligand treatment, and the natural crystallographic (100) facets surface of PSC is chosen as the research platform to provide a deeper understanding of the passivation process. The confocal photoluminescence (PL) results show that the pristine three-dimensional (3D) MAPbI3 PSC surface with a symmetric emission spectrum is normally converted to a pure two-dimensional (2D) BA2PbI4, and also forms a quasi-2D Ruddlesden–Popper perovskite (RPP) BA2MAn−1PbnI3n+1 (n = 2, 3, 4, … ∞) after BA exchange with cation defects. The blue shift in the PL peak, as well as the extended exciton lifetimes of time-resolved photoluminescence (TRPL), indicate the realization of surface defect passivation. Additionally, changes in surface morphology are also investigated. The reaction starts with the formation of small, layered crystallites over the surface; as time elapses, the layered crystallites spread and merge in contact with each other, eventually resulting in smooth features. Our findings present a simple approach for MAPbI3 PSC surface defect passivation, which aims to advance MHP optimization processes toward practical perovskite device applications.
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46
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Batool S, Idrees M, Zhang SR, Han ST, Zhou Y. Novel charm of 2D materials engineering in memristor: when electronics encounter layered morphology. NANOSCALE HORIZONS 2022; 7:480-507. [PMID: 35343522 DOI: 10.1039/d2nh00031h] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The family of two-dimensional (2D) materials composed of atomically thin layers connected via van der Waals interactions has attracted much curiosity due to a variety of intriguing physical, optical, and electrical characteristics. The significance of analyzing statistics on electrical devices and circuits based on 2D materials is seldom underestimated. Certain requirements must be met to deliver scientific knowledge that is beneficial in the field of 2D electronics: synthesis and fabrication must occur at the wafer level, variations in morphology and lattice alterations must be visible and statistically verified, and device dimensions must be appropriate. The authors discussed the most recent significant concerns of 2D materials in the provided prose and attempted to highlight the prerequisites for synthesis, yield, and mechanism behind device-to-device variability, reliability, and durability benchmarking under memristors characteristics; they also indexed some useful approaches that have already been reported to be advantageous in large-scale production. Commercial applications, on the other hand, will necessitate further effort.
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Affiliation(s)
- Saima Batool
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Institute of Microscale Optoelectronics, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Muhammad Idrees
- Additive Manufacturing Institute, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Shi-Rui Zhang
- Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Su-Ting Han
- College of Electronics Science & Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
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47
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Liu Q, Gao S, Xu L, Yue W, Zhang C, Kan H, Li Y, Shen G. Nanostructured perovskites for nonvolatile memory devices. Chem Soc Rev 2022; 51:3341-3379. [PMID: 35293907 DOI: 10.1039/d1cs00886b] [Citation(s) in RCA: 30] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Perovskite materials have driven tremendous advances in constructing electronic devices owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties, flexible dimensionality engineering, and so on. Particularly, emerging nonvolatile memory devices (eNVMs) based on perovskites give birth to numerous traditional paradigm terminators in the fields of storage and computation. Despite significant exploration efforts being devoted to perovskite-based high-density storage and neuromorphic electronic devices, research studies on materials' dimensionality that has dominant effects on perovskite electronics' performances are paid little attention; therefore, a review from the point of view of structural morphologies of perovskites is essential for constructing perovskite-based devices. Here, recent advances of perovskite-based eNVMs (memristors and field-effect-transistors) are reviewed in terms of the dimensionality of perovskite materials and their potentialities in storage or neuromorphic computing. The corresponding material preparation methods, device structures, working mechanisms, and unique features are showcased and evaluated in detail. Furthermore, a broad spectrum of advanced technologies (e.g., hardware-based neural networks, in-sensor computing, logic operation, physical unclonable functions, and true random number generator), which are successfully achieved for perovskite-based electronics, are investigated. It is obvious that this review will provide benchmarks for designing high-quality perovskite-based electronics for application in storage, neuromorphic computing, artificial intelligence, information security, etc.
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Affiliation(s)
- Qi Liu
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Song Gao
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Lei Xu
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Wenjing Yue
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Chunwei Zhang
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Hao Kan
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China.
| | - Yang Li
- School of Information Science and Engineering & Shandong Provincial Key Laboratory of Network Based Intelligent Computing, University of Jinan, Jinan 250022, China. .,State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors & Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100083, China.
| | - Guozhen Shen
- State Key Laboratory for Superlattices and Microstructures Institute of Semiconductors & Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing 100083, China.
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48
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Soft X-ray characterization of halide perovskite film by scanning transmission X-ray microscopy. Sci Rep 2022; 12:4520. [PMID: 35296696 PMCID: PMC8927596 DOI: 10.1038/s41598-022-08256-3] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2021] [Accepted: 02/25/2022] [Indexed: 11/10/2022] Open
Abstract
Organic–inorganic metal halide perovskites (MHPs) have recently been receiving a lot of attention due to their newfound application in optoelectronic devices, including perovskite solar cells (PSCs) which have reached power conversion efficiencies as high as 25.5%. However, the fundamental mechanisms in PSCs, including the correlation of degradation with the excellent optoelectrical properties of the perovskite absorbers, are poorly understood. In this paper, we have explored synchrotron-based soft X-ray characterization as an effective technique for the compositional analysis of MHP thin films. Most synchrotron-based studies used for investigating MHPs so far are based on hard X-rays (5–10 keV) which include various absorption edges (Pb L-edge, I L-edge, Br K-edge, etc.) but are not suited for the analysis of the organic component in these materials. In order to be sensitive to a maximum number of elements, we have employed soft X-ray-based scanning transmission X-ray microscopy (STXM) as a spectro-microscopy technique for the characterization of MHPs. We examined its sensitivity to iodine and organic components, aging, or oxidation by-products in MHPs to make sure that our suggested method is suitable for studying MHPs. Furthermore, methylammonium triiodide with different deposition ratios of PbI2 and CH3NH3I (MAI), and different thicknesses, were characterized for chemical inhomogeneity at the nanoscale by STXM. Through these measurements, we demonstrate that STXM is very sensitive to chemical composition and homogeneity in MHPs. Thus, we highlight the utility of STXM for an in-depth analysis of physical and chemical phenomena in PSCs.
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49
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Kang M, Choi D, Bae JY, Byun M. Micro-to-Nanometer Scale Patterning of Perovskite Inks via Controlled Self-Assemblies. MATERIALS (BASEL, SWITZERLAND) 2022; 15:1521. [PMID: 35208061 PMCID: PMC8878448 DOI: 10.3390/ma15041521] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/05/2022] [Revised: 02/10/2022] [Accepted: 02/15/2022] [Indexed: 12/04/2022]
Abstract
In the past decade, perovskite materials have gained intensive interest due to their remarkable material properties in optoelectronics and photodetectors. This review highlights recent advances in micro-to-nanometer scale patterning of perovskite inks, placing an undue emphasis on recently developed approaches to harness spatially ordered and crystallographically oriented structures with unprecedented regularity via controlled self-assemblies, including blade coating, inkjet printing, and nanoimprinting. Patterning of the perovskite elements at the micro- or nanometer scale might be a key parameter for their integration in a real system. Nowadays, unconventional approaches based on irreversible solution evaporation hold an important position in the structuring and integration of perovskite materials. Herein, easier type patterning techniques based on evaporations of polymer solutions and the coffee ring effect are systematically reviewed. The recent progress in the potential applications of the patterned perovskite inks is also introduced.
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Affiliation(s)
- Misun Kang
- Department of Advanced Materials Engineering, Keimyung University, Daegu 42601, Korea;
- Department of Chemistry, Keimyung University, Daegu 42601, Korea
| | - Dooho Choi
- School of Advanced Materials Engineering, Dong-Eui University, Busan 47340, Korea;
| | - Jae Young Bae
- Department of Chemistry, Keimyung University, Daegu 42601, Korea
| | - Myunghwan Byun
- Department of Advanced Materials Engineering, Keimyung University, Daegu 42601, Korea;
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50
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Lian H, Cheng X, Hao H, Han J, Lau MT, Li Z, Zhou Z, Dong Q, Wong WY. Metal-containing organic compounds for memory and data storage applications. Chem Soc Rev 2022; 51:1926-1982. [PMID: 35083990 DOI: 10.1039/d0cs00569j] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
With the upcoming trend of Big Data era, some new types of memory technologies have emerged as substitutes for the traditional Si-based semiconductor memory devices, which are encountering severe scaling down technical obstacles. In particular, the resistance random access memory (RRAM) and magnetic random access memory (MRAM) hold great promise for the in-memory computing, which are regarded as the optimal strategy and pathway to solve the von Neumann bottleneck by high-throughput in situ data processing. As far as the active materials in RRAM and MRAM are concerned, organic semiconducting materials have shown increasing application perspectives in memory devices due to their rich structural diversity and solution processability. With the introduction of metal elements into the backbone of molecules, some new properties and phenomena will emerge accordingly. Consequently, the RRAM and MRAM devices based on metal-containing organic compounds (including the small molecular metal complexes, metallopolymers, metal-organic frameworks (MOFs) and organic-inorganic-hybrid perovskites (OIHPs)) have been widely explored and attracted intense attention. In this review, we highlight the fundamentals of RRAM and MRAM, as well as the research progress of the applications of metal-containing organic compounds in both RRAM and MRAM. Finally, we discuss the challenges and future directions for the research of organic RRAM and MRAM.
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Affiliation(s)
- Hong Lian
- MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai 200072, China.,School of Mechanical & Electronic Engineering and Automation, Shanghai University, 99 Shangda Road, Baoshan District, Shanghai 200444, China. .,MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Xiaozhe Cheng
- MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai 200072, China.,MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China.,Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China.
| | - Haotian Hao
- MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Jinba Han
- MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Mei-Tung Lau
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China. .,The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
| | - Zikang Li
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China. .,The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
| | - Zhi Zhou
- School of Chemistry and Materials Science, Hunan Agricultural University, Changsha 410128, China.
| | - Qingchen Dong
- MOE Key Laboratory of Advanced Display and System Applications, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai 200072, China.,School of Mechanical & Electronic Engineering and Automation, Shanghai University, 99 Shangda Road, Baoshan District, Shanghai 200444, China. .,MOE Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, 79 Yingze West Street, Taiyuan, 030024, China
| | - Wai-Yeung Wong
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China. .,The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
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