1
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Sestoft JE, Marnauza M, Olsteins D, Kanne T, Schlosser RD, Chen IJ, Grove-Rasmussen K, Nygård J. Shadowed versus Etched Superconductor-Semiconductor Junctions in Al/InAs Nanowires. NANO LETTERS 2024. [PMID: 38865258 DOI: 10.1021/acs.nanolett.4c02055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2024]
Abstract
Hybrid semiconductor-superconductor nanowires have emerged as a cornerstone in modern quantum devices. Integrating such nanowires into hybrid devices typically requires extensive postgrowth processing which may affect device performance unfavorably. Here, we present a technique for in situ shadowing superconductors on nanowires and compare the structural and electronic properties of Al junctions formed by shadowing versus etching. Based on transmission electron microscopy, we find that typical etching procedures lead to atomic-scale surface roughening. This surface perturbation may cause a reduction of the electron mobility as demonstrated in transport measurements. Further, we display advanced shadowing geometries aiding in the pursuit of bringing fabrication of hybrid devices in situ. Finally, we give examples of shadowed junctions exploited in various device geometries that exhibit high-quality quantum transport signatures.
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Affiliation(s)
- Joachim E Sestoft
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Mikelis Marnauza
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Dags Olsteins
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Thomas Kanne
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Rasmus D Schlosser
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - I-Ju Chen
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Kasper Grove-Rasmussen
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Jesper Nygård
- Center for Quantum Devices and Nano-science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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2
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Zheng H, Cheung LY, Sangwan N, Kononov A, Haller R, Ridderbos J, Ciaccia C, Ungerer JH, Li A, Bakkers EP, Baumgartner A, Schönenberger C. Coherent Control of a Few-Channel Hole Type Gatemon Qubit. NANO LETTERS 2024; 24:7173-7179. [PMID: 38848282 PMCID: PMC11194827 DOI: 10.1021/acs.nanolett.4c00770] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2024] [Revised: 05/03/2024] [Accepted: 05/06/2024] [Indexed: 06/09/2024]
Abstract
Gatemon qubits are the electrically tunable cousins of superconducting transmon qubits. In this work, we demonstrate the full coherent control of a gatemon qubit based on hole carriers in a Ge/Si core/shell nanowire, with the longest coherence times in group IV material gatemons to date. The key to these results is a high-quality Josephson junction obtained using a straightforward and reproducible annealing technique. We demonstrate that the transport through the narrow junction is dominated by only two quantum channels, with transparencies up to unity. This novel qubit platform holds great promise for quantum information applications, not only because it incorporates technologically relevant materials, but also because it provides new opportunities, like an ultrastrong spin-orbit coupling in the few-channel regime of Josephson junctions.
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Affiliation(s)
- Han Zheng
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Luk Yi Cheung
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Nikunj Sangwan
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Artem Kononov
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Roy Haller
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Joost Ridderbos
- MESA+
Institute for Nanotechnology University of Twente, 7500 AE Enschede, The Netherlands
| | - Carlo Ciaccia
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Jann Hinnerk Ungerer
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
| | - Ang Li
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Erik P.A.M. Bakkers
- Department
of Applied Physics, Eindhoven University
of Technology, 5600 MB Eindhoven, The Netherlands
| | - Andreas Baumgartner
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
- Swiss
Nanoscience Institute, University of Basel, 4056 Basel, Switzerland
| | - Christian Schönenberger
- Quantum-
and Nanoelectronics Lab, Department of Physics, University of Basel, 4056 Basel, Switzerland
- Swiss
Nanoscience Institute, University of Basel, 4056 Basel, Switzerland
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3
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Levajac V, Barakov H, Mazur GP, van Loo N, Kouwenhoven LP, Nazarov YV, Wang JY. Supercurrent in the Presence of Direct Transmission and a Resonant Localized State. PHYSICAL REVIEW LETTERS 2024; 132:176304. [PMID: 38728734 DOI: 10.1103/physrevlett.132.176304] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2023] [Revised: 01/25/2024] [Accepted: 04/02/2024] [Indexed: 05/12/2024]
Abstract
We study the current-phase relation (CPR) of an InSb-Al nanowire Josephson junction in parallel magnetic fields up to 700 mT. At high magnetic fields and in narrow voltage intervals of a gate under the junction, the CPR exhibits π shifts. The supercurrent declines within these gate intervals and shows asymmetric gate voltage dependence above and below them. We detect these features sometimes also at zero magnetic field. The observed CPR properties are reproduced by a theoretical model of supercurrent transport via interference between direct transmission and a resonant localized state.
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Affiliation(s)
- Vukan Levajac
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Hristo Barakov
- Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ Delft, The Netherlands
| | - Grzegorz P Mazur
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Nick van Loo
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Leo P Kouwenhoven
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Yuli V Nazarov
- Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ Delft, The Netherlands
| | - Ji-Yin Wang
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands
- Beijing Academy of Quantum Information Sciences, 100193 Beijing, China
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4
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Li R, Song W, Miao W, Yu Z, Wang Z, Yang S, Gao Y, Wang Y, Chen F, Geng Z, Yang L, Xu J, Feng X, Wang T, Zang Y, Li L, Shang R, Xue Q, He K, Zhang H. Selective-Area-Grown PbTe-Pb Planar Josephson Junctions for Quantum Devices. NANO LETTERS 2024; 24:4658-4664. [PMID: 38563608 DOI: 10.1021/acs.nanolett.4c00900] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/04/2024]
Abstract
Planar Josephson junctions are predicted to host Majorana zero modes. The material platforms in previous studies are two-dimensional electron gases (InAs, InSb, InAsSb, and HgTe) coupled to a superconductor such as Al or Nb. Here, we introduce a new material platform for planar JJs, the PbTe-Pb hybrid. The semiconductor, PbTe, was grown as a thin film via selective area epitaxy. The Josephson junction was defined by a shadow wall during the deposition of superconductor Pb. Scanning transmission electron microscopy reveals a sharp semiconductor-superconductor interface. Gate-tunable supercurrents and multiple Andreev reflections are observed. A perpendicular magnetic field causes interference patterns of the switching current, exhibiting Fraunhofer-like and SQUID-like behaviors. We further demonstrate a prototype device for Majorana detection wherein phase bias and tunneling spectroscopy are applicable.
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Affiliation(s)
- Ruidong Li
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Wenyu Song
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Wentao Miao
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zehao Yu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zhaoyu Wang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Shuai Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yichun Gao
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Yuhao Wang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Fangting Chen
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Zuhan Geng
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Lining Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Jiaye Xu
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Xiao Feng
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Hefei National Laboratory, Hefei 230088, China
| | - Tiantian Wang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Hefei National Laboratory, Hefei 230088, China
| | - Yunyi Zang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Hefei National Laboratory, Hefei 230088, China
| | - Lin Li
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
| | - Runan Shang
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Hefei National Laboratory, Hefei 230088, China
| | - Qikun Xue
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Hefei National Laboratory, Hefei 230088, China
- Southern University of Science and Technology, Shenzhen 518055, China
| | - Ke He
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Hefei National Laboratory, Hefei 230088, China
| | - Hao Zhang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
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5
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Shani L, Chaaban J, Nilson A, Clerc E, Menning G, Riggert C, Lueb P, Rossi M, Badawy G, Bakkers EPAM, Pribiag VS. Thermal scanning probe and laser lithography for patterning nanowire based quantum devices. NANOTECHNOLOGY 2024; 35:255302. [PMID: 38467064 DOI: 10.1088/1361-6528/ad3257] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2023] [Accepted: 03/10/2024] [Indexed: 03/13/2024]
Abstract
Semiconductor nanowire (NW) quantum devices offer a promising path for the pursuit and investigation of topologically-protected quantum states, and superconducting and spin-based qubits that can be controlled using electric fields. Theoretical investigations into the impact of disorder on the attainment of dependable topological states in semiconducting nanowires with large spin-orbit coupling andg-factor highlight the critical need for improvements in both growth processes and nanofabrication techniques. In this work, we used a hybrid lithography tool for both the high-resolution thermal scanning probe lithography and high-throughput direct laser writing of quantum devices based on thin InSb nanowires with contact spacing of 200 nm. Electrical characterization demonstrates quasi-ballistic transport. The methodology outlined in this study has the potential to reduce the impact of disorder caused by fabrication processes in quantum devices based on 1D semiconductors.
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Affiliation(s)
- Lior Shani
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455, United States of America
| | - Jana Chaaban
- Heidelberg Instruments Nano AG, Zurich, Switzerland
| | - Alec Nilson
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455, United States of America
| | - Eliott Clerc
- Heidelberg Instruments Nano AG, Zurich, Switzerland
| | - Gavin Menning
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455, United States of America
| | - Colin Riggert
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455, United States of America
| | - Pim Lueb
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Marco Rossi
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Ghada Badawy
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Erik P A M Bakkers
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Vlad S Pribiag
- School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455, United States of America
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6
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Badawy G, Bakkers EPAM. Electronic Transport and Quantum Phenomena in Nanowires. Chem Rev 2024; 124:2419-2440. [PMID: 38394689 PMCID: PMC10941195 DOI: 10.1021/acs.chemrev.3c00656] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/10/2023] [Revised: 01/26/2024] [Accepted: 02/08/2024] [Indexed: 02/25/2024]
Abstract
Nanowires are natural one-dimensional channels and offer new opportunities for advanced electronic quantum transport experiments. We review recent progress on the synthesis of nanowires and methods for the fabrication of hybrid semiconductor/superconductor systems. We discuss methods to characterize their electronic properties in the context of possible future applications such as topological and spin qubits. We focus on group III-V (InAs and InSb) and group IV (Ge/Si) semiconductors, since these are the most developed, and give an outlook on other potential materials.
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Affiliation(s)
- Ghada Badawy
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
| | - Erik P. A. M. Bakkers
- Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
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7
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Ryu Y, Jeong J, Suh J, Kim J, Choi H, Cha J. Utilizing Gate-Controlled Supercurrent for All-Metallic Tunable Superconducting Microwave Resonators. NANO LETTERS 2024; 24:1223-1230. [PMID: 38232153 DOI: 10.1021/acs.nanolett.3c04080] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/19/2024]
Abstract
Hybridizing a microwave mode with a quantum state requires precise frequency matching of a superconducting microwave resonator and the corresponding quantum object. However, fabrication always brings imperfections in geometry and material properties, causing deviations from the desired operating frequencies. An effective and universal strategy for their resonant coupling is to tune the frequency of a resonator, as quantum states like phonons are hardly tunable. Here, we demonstrate gate-tunable, titanium-nitride (TiN)-based superconducting resonators by implementing a nanowire inductor whose kinetic inductance is tuned via the gate-controlled supercurrent (GCS) effect. We investigate their responses for different gate biases and observe 4% (∼150 MHz) frequency tuning with decreasing internal quality factors. We also perform temperature-controlled experiments to support phonon-related mechanisms in the GCS effect and the resonance tuning. The GCS effect-based method proposed in this study provides an effective route for locally tunable resonators that can be employed in various hybrid quantum devices.
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Affiliation(s)
- Younghun Ryu
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, South Korea
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
| | - Jinhoon Jeong
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, South Korea
| | - Junho Suh
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea
| | - Jihwan Kim
- Agency For Defense Development (ADD), Daejeon 34186, South Korea
| | - Hyoungsoon Choi
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
- Graduate School of Quantum Science and Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
| | - Jinwoong Cha
- Quantum Technology Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, South Korea
- Graduate School of Quantum Science and Technology, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South Korea
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8
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Valentini M, Sagi O, Baghumyan L, de Gijsel T, Jung J, Calcaterra S, Ballabio A, Aguilera Servin J, Aggarwal K, Janik M, Adletzberger T, Seoane Souto R, Leijnse M, Danon J, Schrade C, Bakkers E, Chrastina D, Isella G, Katsaros G. Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium. Nat Commun 2024; 15:169. [PMID: 38167818 PMCID: PMC10762135 DOI: 10.1038/s41467-023-44114-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Accepted: 11/30/2023] [Indexed: 01/05/2024] Open
Abstract
Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as topological superconductivity and protected qubits. In this work, we engineer the induced superconductivity in two-dimensional germanium hole gas by varying the distance between the quantum well and the aluminum. We demonstrate a hard superconducting gap and realize an electrically and flux tunable superconducting diode using a superconducting quantum interference device (SQUID). This allows to tune the current phase relation (CPR), to a regime where single Cooper pair tunneling is suppressed, creating a [Formula: see text] CPR. Shapiro experiments complement this interpretation and the microwave drive allows to create a diode with ≈ 100% efficiency. The reported results open up the path towards integration of spin qubit devices, microwave resonators and (protected) superconducting qubits on the same silicon technology compatible platform.
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Affiliation(s)
- Marco Valentini
- Institute of Science and Technology Austria, Klosterneuburg, Austria.
| | - Oliver Sagi
- Institute of Science and Technology Austria, Klosterneuburg, Austria
| | - Levon Baghumyan
- Institute of Science and Technology Austria, Klosterneuburg, Austria
| | - Thijs de Gijsel
- Institute of Science and Technology Austria, Klosterneuburg, Austria
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | - Jason Jung
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | | | - Andrea Ballabio
- L-NESS, Physics Department, Politecnico di Milano, Como, Italy
| | | | - Kushagra Aggarwal
- Institute of Science and Technology Austria, Klosterneuburg, Austria
- Department of Materials, University of Oxford, Oxford, UK
| | - Marian Janik
- Institute of Science and Technology Austria, Klosterneuburg, Austria
| | | | - Rubén Seoane Souto
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
- Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas (ICMM-CSIC), Madrid, Spain
| | - Martin Leijnse
- NanoLund and Solid State Physics, Lund University, Lund, Sweden
| | - Jeroen Danon
- Department of Physics, Norwegian University of Science and Technology, Trondheim, Norway
| | - Constantin Schrade
- Hearne Institute for Theoretical Physics, Department of Physics and Astronomy, Louisiana State University, Baton Rouge, USA
| | - Erik Bakkers
- Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands
| | | | - Giovanni Isella
- L-NESS, Physics Department, Politecnico di Milano, Como, Italy
| | - Georgios Katsaros
- Institute of Science and Technology Austria, Klosterneuburg, Austria.
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9
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Matsuo S, Imoto T, Yokoyama T, Sato Y, Lindemann T, Gronin S, Gardner GC, Nakosai S, Tanaka Y, Manfra MJ, Tarucha S. Phase-dependent Andreev molecules and superconducting gap closing in coherently-coupled Josephson junctions. Nat Commun 2023; 14:8271. [PMID: 38092786 PMCID: PMC10719386 DOI: 10.1038/s41467-023-44111-3] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/02/2023] [Accepted: 11/30/2023] [Indexed: 12/17/2023] Open
Abstract
The Josephson junction (JJ) is an essential element of superconducting (SC) devices for both fundamental and applied physics. The short-range coherent coupling of two adjacent JJs forms Andreev molecule states (AMSs), which provide a new ingredient to engineer exotic SC phenomena such as topological SC states and Andreev qubits. Here we provide tunneling spectroscopy measurements on a device consisting of two electrically controllable planar JJs sharing a single SC electrode. We discover that Andreev spectra in the coupled JJ are highly modulated from those in the single JJs and possess phase-dependent AMS features reproduced in our numerical calculation. Notably, the SC gap closing due to the AMS formation is experimentally observed. Our results help in understanding SC transport derived from the AMS and promoting the use of AMS physics to engineer topological SC states and quantum information devices.
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Affiliation(s)
- Sadashige Matsuo
- Center for Emergent Matter Science, RIKEN, Saitama, 351-0198, Japan.
| | - Takaya Imoto
- Center for Emergent Matter Science, RIKEN, Saitama, 351-0198, Japan
- Department of Applied Physics, Tokyo University of Science, Tokyo, 162-8601, Japan
| | - Tomohiro Yokoyama
- Department of Materials Engineering Science, Osaka University, Osaka, 560-8531, Japan.
| | - Yosuke Sato
- Center for Emergent Matter Science, RIKEN, Saitama, 351-0198, Japan
| | - Tyler Lindemann
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana, IN, 47907, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, IN, 47907, USA
| | - Sergei Gronin
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, IN, 47907, USA
| | - Geoffrey C Gardner
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, IN, 47907, USA
| | - Sho Nakosai
- Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan
| | - Yukio Tanaka
- Department of Applied Physics, Nagoya University, Nagoya, 464-8603, Japan
| | - Michael J Manfra
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana, IN, 47907, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, IN, 47907, USA
- School of Materials Engineering, Purdue University, West Lafayette, Indiana, IN, 47907, USA
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, IN, 47907, USA
| | - Seigo Tarucha
- Center for Emergent Matter Science, RIKEN, Saitama, 351-0198, Japan.
- RIKEN Center for Quantum Computing, RIKEN, Saitama, 351-0198, Japan.
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10
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Olšteins D, Nagda G, Carrad DJ, Beznasyuk DV, Petersen CEN, Martí-Sánchez S, Arbiol J, Jespersen TS. Cryogenic multiplexing using selective area grown nanowires. Nat Commun 2023; 14:7738. [PMID: 38007553 PMCID: PMC10676361 DOI: 10.1038/s41467-023-43551-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Accepted: 11/13/2023] [Indexed: 11/27/2023] Open
Abstract
Bottom-up grown nanomaterials play an integral role in the development of quantum technologies but are often challenging to characterise on large scales. Here, we harness selective area growth of semiconductor nanowires to demonstrate large-scale integrated circuits and characterisation of large numbers of quantum devices. The circuit consisted of 512 quantum devices embedded within multiplexer/demultiplexer pairs, incorporating thousands of interconnected selective area growth nanowires operating under deep cryogenic conditions. Multiplexers enable a range of new strategies in quantum device research and scaling by increasing the device count while limiting the number of connections between room-temperature control electronics and the cryogenic samples. As an example of this potential we perform a statistical characterization of large arrays of identical quantum dots thus establishing the feasibility of applying cross-bar gating strategies for efficient scaling of future selective area growth quantum circuits. More broadly, the ability to systematically characterise large numbers of devices provides new levels of statistical certainty to materials/device development.
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Affiliation(s)
- Dāgs Olšteins
- Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100, Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark
| | - Gunjan Nagda
- Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100, Copenhagen, Denmark
| | - Damon J Carrad
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark
| | - Daria V Beznasyuk
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark
| | - Christian E N Petersen
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, Spain
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, Barcelona, Catalonia, Spain
- ICREA, Passeig de Lluís Companys 23, 08010, Barcelona, Catalonia, Spain
| | - Thomas S Jespersen
- Center For Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100, Copenhagen, Denmark.
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800, Kongens Lyngby, Denmark.
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11
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Haxell DZ, Coraiola M, Sabonis D, Hinderling M, Ten Kate SC, Cheah E, Krizek F, Schott R, Wegscheider W, Belzig W, Cuevas JC, Nichele F. Microwave-induced conductance replicas in hybrid Josephson junctions without Floquet-Andreev states. Nat Commun 2023; 14:6798. [PMID: 37884490 PMCID: PMC10603169 DOI: 10.1038/s41467-023-42357-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/12/2023] [Accepted: 10/09/2023] [Indexed: 10/28/2023] Open
Abstract
Light-matter coupling allows control and engineering of complex quantum states. Here we investigate a hybrid superconducting-semiconducting Josephson junction subject to microwave irradiation by means of tunnelling spectroscopy of the Andreev bound state spectrum and measurements of the current-phase relation. For increasing microwave power, discrete levels in the tunnelling conductance develop into a series of equally spaced replicas, while the current-phase relation changes amplitude and skewness, and develops dips. Quantitative analysis of our results indicates that conductance replicas originate from photon assisted tunnelling of quasiparticles into Andreev bound states through the tunnelling barrier. Despite strong qualitative similarities with proposed signatures of Floquet-Andreev states, our study rules out this scenario. The distortion of the current-phase relation is explained by the interaction of Andreev bound states with microwave photons, including a non-equilibrium Andreev bound state occupation. The techniques outlined here establish a baseline to study light-matter coupling in hybrid nanostructures and distinguish photon assisted tunnelling from Floquet-Andreev states in mesoscopic devices.
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Affiliation(s)
| | - Marco Coraiola
- IBM Research Europe-Zurich, 8803, Rüschlikon, Switzerland
| | | | | | | | - Erik Cheah
- Laboratory for Solid State Physics, ETH Zürich, 8093, Zürich, Switzerland
| | - Filip Krizek
- IBM Research Europe-Zurich, 8803, Rüschlikon, Switzerland
- Laboratory for Solid State Physics, ETH Zürich, 8093, Zürich, Switzerland
| | - Rüdiger Schott
- Laboratory for Solid State Physics, ETH Zürich, 8093, Zürich, Switzerland
| | - Werner Wegscheider
- Laboratory for Solid State Physics, ETH Zürich, 8093, Zürich, Switzerland
| | - Wolfgang Belzig
- Fachbereich Physik, Universität Konstanz, D-78457, Konstanz, Germany
| | - Juan Carlos Cuevas
- Fachbereich Physik, Universität Konstanz, D-78457, Konstanz, Germany
- Departamento de Física Teórica de la Materia Condensada and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E-28049, Madrid, Spain
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12
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Haxell D, Coraiola M, Sabonis D, Hinderling M, ten Kate SC, Cheah E, Krizek F, Schott R, Wegscheider W, Nichele F. Zeeman- and Orbital-Driven Phase Shifts in Planar Josephson Junctions. ACS NANO 2023; 17:18139-18147. [PMID: 37694539 PMCID: PMC10540266 DOI: 10.1021/acsnano.3c04957] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2023] [Accepted: 08/25/2023] [Indexed: 09/12/2023]
Abstract
We perform supercurrent and tunneling spectroscopy measurements on gate-tunable InAs/Al Josephson junctions (JJs) in an in-plane magnetic field and report on phase shifts in the current-phase relation measured with respect to an absolute phase reference. The impact of orbital effects is investigated by studying multiple devices with different superconducting lead sizes. At low fields, we observe gate-dependent phase shifts of up to φ0 = 0.5π, which are consistent with a Zeeman field coupling to highly transmissive Andreev bound states via Rashba spin-orbit interaction. A distinct phase shift emerges at larger fields, concomitant with a switching current minimum and the closing and reopening of the superconducting gap. These signatures of an induced phase transition, which might resemble a topological transition, scale with the superconducting lead size, demonstrating the crucial role of orbital effects. Our results elucidate the interplay of Zeeman, spin-orbit, and orbital effects in InAs/Al JJs, giving improved understanding of phase transitions in hybrid JJs and their applications in quantum computing and superconducting electronics.
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Affiliation(s)
| | - Marco Coraiola
- IBM
Research Europe−Zurich, 8803 Rüschlikon, Switzerland
| | | | | | | | - Erik Cheah
- Laboratory
for Solid State Physics, ETH Zürich, 8093 Zürich, Switzerland
| | - Filip Krizek
- IBM
Research Europe−Zurich, 8803 Rüschlikon, Switzerland
- Laboratory
for Solid State Physics, ETH Zürich, 8093 Zürich, Switzerland
- Institute
of Physics, Czech Academy of Sciences, 162 00 Prague, Czech Republic
| | - Rüdiger Schott
- Laboratory
for Solid State Physics, ETH Zürich, 8093 Zürich, Switzerland
| | - Werner Wegscheider
- Laboratory
for Solid State Physics, ETH Zürich, 8093 Zürich, Switzerland
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13
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Wesdorp JJ, Grünhaupt L, Vaartjes A, Pita-Vidal M, Bargerbos A, Splitthoff LJ, Krogstrup P, van Heck B, de Lange G. Dynamical Polarization of the Fermion Parity in a Nanowire Josephson Junction. PHYSICAL REVIEW LETTERS 2023; 131:117001. [PMID: 37774257 DOI: 10.1103/physrevlett.131.117001] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2022] [Revised: 01/22/2023] [Accepted: 07/14/2023] [Indexed: 10/01/2023]
Abstract
Josephson junctions in InAs nanowires proximitized with an Al shell can host gate-tunable Andreev bound states. Depending on the bound state occupation, the fermion parity of the junction can be even or odd. Coherent control of Andreev bound states has recently been achieved within each parity sector, but it is impeded by incoherent parity switches due to excess quasiparticles in the superconducting environment. Here, we show that we can polarize the fermion parity dynamically using microwave pulses by embedding the junction in a superconducting LC resonator. We demonstrate polarization up to 94%±1% (89%±1%) for the even (odd) parity as verified by single shot parity readout. Finally, we apply this scheme to probe the flux-dependent transition spectrum of the even or odd parity sector selectively, without any postprocessing or heralding.
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Affiliation(s)
- J J Wesdorp
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ, Delft, Netherlands
| | - L Grünhaupt
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ, Delft, Netherlands
| | - A Vaartjes
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ, Delft, Netherlands
| | - M Pita-Vidal
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ, Delft, Netherlands
| | - A Bargerbos
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ, Delft, Netherlands
| | - L J Splitthoff
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2628 CJ, Delft, Netherlands
| | - P Krogstrup
- NNF Quantum Computing Programme, Niels Bohr Institute, University of Copenhagen, Denmark
| | - B van Heck
- Microsoft Quantum Lab Delft, 2628 CJ, Delft, Netherlands
- Leiden Institute of Physics, Universiteit Leiden, Niels Bohrweg 2, 2333 CA Leiden, Netherlands
- Dipartimento di Fisica, Sapienza Università di Roma, P.le Aldo Moro 2, 00185 Roma, Italy
| | - G de Lange
- Microsoft Quantum Lab Delft, 2628 CJ, Delft, Netherlands
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14
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Yu S, Chen L, Pan Y, Wang Y, Zhang D, Wu G, Fan X, Liu X, Wu L, Zhang L, Peng W, Ren J, Wang Z. Gate-Tunable Critical Current of the Three-Dimensional Niobium Nanobridge Josephson Junction. NANO LETTERS 2023; 23:8043-8049. [PMID: 37592211 DOI: 10.1021/acs.nanolett.3c02015] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/19/2023]
Abstract
Recent studies have shown that the critical currents of several metallic superconducting nanowires and Dayem bridges can be locally tuned by using a gate voltage (Vg). Here, we report a gate-tunable Josephson junction structure constructed from a three-dimensional (3D) niobium nanobridge junction (NBJ) with a voltage gate on top. Measurements up to 6 K showed that the critical current of this structure can be tuned to zero by increasing Vg. The critical gate voltage was reduced to 16 V and may possibly be reduced further by reducing the thickness of the insulation layer between the gate and the NBJ. Furthermore, the flux modulation generated by Josephson interference of two parallel 3D NBJs can also be tuned by using Vg in a similar manner. Therefore, we believe that this gate-tunable Josephson junction structure is promising for superconducting circuit fabrication at high integration levels.
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Affiliation(s)
- Shujie Yu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Lei Chen
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Yinping Pan
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Yue Wang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Denghui Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Guangting Wu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Xinxin Fan
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaoyu Liu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Ling Wu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Lu Zhang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Wei Peng
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Jie Ren
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Zhen Wang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology(SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
- School of Physical Science and Technology, Shanghai Tech University, Shanghai 200031, China
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15
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Haxell D, Coraiola M, Hinderling M, ten Kate SC, Sabonis D, Svetogorov AE, Belzig W, Cheah E, Krizek F, Schott R, Wegscheider W, Nichele F. Demonstration of the Nonlocal Josephson Effect in Andreev Molecules. NANO LETTERS 2023; 23:7532-7538. [PMID: 37552598 PMCID: PMC10450812 DOI: 10.1021/acs.nanolett.3c02066] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2023] [Revised: 07/24/2023] [Indexed: 08/10/2023]
Abstract
We perform switching current measurements of planar Josephson junctions (JJs) coupled by a common superconducting electrode with independent control over the two superconducting phase differences. We observe an anomalous phase shift in the current-phase relation of a JJ as a function of gate voltage or phase difference in the second JJ. This demonstrates the nonlocal Josephson effect, and the implementation of a φ0-junction which is tunable both electrostatically and magnetically. The anomalous phase shift is larger for shorter distances between the JJs and vanishes for distances much longer than the superconducting coherence length. Results are consistent with the hybridization of Andreev bound states, leading to the formation of an Andreev molecule. Our devices constitute a realization of a tunable superconducting phase source and could enable new coupling schemes for hybrid quantum devices.
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Affiliation(s)
- Daniel
Z. Haxell
- IBM
Research Europe−Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Marco Coraiola
- IBM
Research Europe−Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - Manuel Hinderling
- IBM
Research Europe−Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | | | - Deividas Sabonis
- IBM
Research Europe−Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | | | - Wolfgang Belzig
- Fachbereich
Physik, Universität Konstanz, D-78457 Konstanz, Germany
| | - Erik Cheah
- Solid
State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland
| | - Filip Krizek
- Fachbereich
Physik, Universität Konstanz, D-78457 Konstanz, Germany
- Solid
State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland
| | - Rüdiger Schott
- Solid
State Physics Laboratory, ETH Zürich, 8093 Zürich, Switzerland
| | | | - Fabrizio Nichele
- IBM
Research Europe−Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
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16
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Goswami A, Mudi SR, Dempsey C, Zhang P, Wu H, Zhang B, Mitchell WJ, Lee JS, Frolov SM, Palmstrøm CJ. Sn/InAs Josephson Junctions on Selective Area Grown Nanowires with in Situ Shadowed Superconductor Evaporation. NANO LETTERS 2023; 23:7311-7318. [PMID: 37561818 DOI: 10.1021/acs.nanolett.3c01320] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/12/2023]
Abstract
Superconductor-semiconductor nanowire hybrid structures are useful in fabricating devices for quantum information processing. While selective area growth (SAG) offers the flexibility to grow semiconductor nanowires in arbitrary geometries, in situ evaporation of superconductors ensures pristine superconductor-semiconductor interfaces, resulting in strong induced superconductivity in the semiconducting nanowire. In this work, we used high-aspect-ratio SiOx dielectric walls to in situ evaporate islands of superconductor tin on in-plane InAs SAG nanowires. Our technique enables customization in the designs of such hybrid nanostructures, while simultaneously performing the nanowire and superconductor growth without breaking vacuum. Using this technique, we grew super(S)-normal(N)-super(S), NS, and SNSNS junctions. We performed cryogenic electron transport measurements revealing the presence of gate and field tunable supercurrents. We further measured the superconducting gap and critical fields in the hybrid nanostructures and the crossover from 2e to 1e periodicity in the SNSNS junctions as a proof of the usability of these hybrid nanostructures.
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Affiliation(s)
- Aranya Goswami
- Electrical and Computer Engineering Department, University of California, Santa Barbara, Santa Barbara, California 93106, United States
| | - Sanchayeta R Mudi
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Connor Dempsey
- Electrical and Computer Engineering Department, University of California, Santa Barbara, Santa Barbara, California 93106, United States
| | - Po Zhang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Hao Wu
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Bomin Zhang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - William J Mitchell
- Nanofabrication facility, University of California, Santa Barbara, Santa Barbara, California 93106, United States
| | - Joon Sue Lee
- California NanoSystems Institute, University of California Santa Barbara, Santa Barbara, California 93106, United States
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Sergey M Frolov
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Christopher J Palmstrøm
- Electrical and Computer Engineering Department, University of California, Santa Barbara, Santa Barbara, California 93106, United States
- Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106, United States
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17
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Schwarz M, Vethaak TD, Derycke V, Francheteau A, Iniguez B, Kataria S, Kloes A, Lefloch F, Lemme M, Snyder JP, Weber WM, Calvet LE. The Schottky barrier transistor in emerging electronic devices. NANOTECHNOLOGY 2023; 34:352002. [PMID: 37100049 DOI: 10.1088/1361-6528/acd05f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 04/25/2023] [Indexed: 06/16/2023]
Abstract
This paper explores how the Schottky barrier (SB) transistor is used in a variety of applications and material systems. A discussion of SB formation, current transport processes, and an overview of modeling are first considered. Three discussions follow, which detail the role of SB transistors in high performance, ubiquitous and cryogenic electronics. For high performance computing, the SB typically needs to be minimized to achieve optimal performance and we explore the methods adopted in carbon nanotube technology and two-dimensional electronics. On the contrary for ubiquitous electronics, the SB can be used advantageously in source-gated transistors and reconfigurable field-effect transistors (FETs) for sensors, neuromorphic hardware and security applications. Similarly, judicious use of an SB can be an asset for applications involving Josephson junction FETs.
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Affiliation(s)
| | - Tom D Vethaak
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg, Sweden
| | - Vincent Derycke
- Université Paris-Saclay, CEA, CNRS, NIMBE, LICSEN, Gif-sur-Yvette, F-91191, France
| | | | | | | | | | - Francois Lefloch
- University Grenoble Alps, GINP, CEA-IRIG-PHELIQS, Grenoble, France
| | | | | | - Walter M Weber
- Technische Universität Wien, Institute of Solid State Electronics, Vienna, Austria
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18
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Ibabe A, Gómez M, Steffensen GO, Kanne T, Nygård J, Yeyati AL, Lee EJH. Joule spectroscopy of hybrid superconductor-semiconductor nanodevices. Nat Commun 2023; 14:2873. [PMID: 37208316 DOI: 10.1038/s41467-023-38533-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/06/2023] [Accepted: 05/05/2023] [Indexed: 05/21/2023] Open
Abstract
Hybrid superconductor-semiconductor devices offer highly tunable platforms, potentially suitable for quantum technology applications, that have been intensively studied in the past decade. Here we establish that measurements of the superconductor-to-normal transition originating from Joule heating provide a powerful spectroscopical tool to characterize such hybrid devices. Concretely, we apply this technique to junctions in full-shell Al-InAs nanowires in the Little-Parks regime and obtain detailed information of each lead independently and in a single measurement, including differences in the superconducting coherence lengths of the leads, inhomogeneous covering of the epitaxial shell, and the inverse superconducting proximity effect; all-in-all constituting a unique fingerprint of each device with applications in the interpretation of low-bias data, the optimization of device geometries, and the uncovering of disorder in these systems. Besides the practical uses, our work also underscores the importance of heating in hybrid devices, an effect that is often overlooked.
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Affiliation(s)
- A Ibabe
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Madrid, Spain
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, Madrid, Spain
| | - M Gómez
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Madrid, Spain
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, Madrid, Spain
| | - G O Steffensen
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, Madrid, Spain
- Departamento de Física Teórica de la Materia Condensada, Universidad Autónoma de Madrid, Madrid, Spain
| | - T Kanne
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - J Nygård
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - A Levy Yeyati
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, Madrid, Spain
- Departamento de Física Teórica de la Materia Condensada, Universidad Autónoma de Madrid, Madrid, Spain
| | - E J H Lee
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Madrid, Spain.
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, Madrid, Spain.
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19
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Klein DR, Xia LQ, MacNeill D, Watanabe K, Taniguchi T, Jarillo-Herrero P. Electrical switching of a bistable moiré superconductor. NATURE NANOTECHNOLOGY 2023; 18:331-335. [PMID: 36717710 DOI: 10.1038/s41565-022-01314-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2022] [Accepted: 12/22/2022] [Indexed: 06/18/2023]
Abstract
Electrical control of superconductivity is critical for nanoscale superconducting circuits including cryogenic memory elements1-4, superconducting field-effect transistors (FETs)5-7 and gate-tunable qubits8-10. Superconducting FETs operate through continuous tuning of carrier density, but no bistable superconducting FET, which could serve as a new type of cryogenic memory element, has been reported. Recently, gate hysteresis and resultant bistability in Bernal-stacked bilayer graphene aligned to its insulating hexagonal boron nitride gate dielectrics were discovered11,12. Here we report the observation of this same hysteresis in magic-angle twisted bilayer graphene (MATBG) with aligned boron nitride layers. This bistable behaviour coexists alongside the strongly correlated electron system of MATBG without disrupting its correlated insulator or superconducting states. This all-van der Waals platform enables configurable switching between different electronic states of this rich system. To illustrate this new approach, we demonstrate reproducible bistable switching between the superconducting, metallic and correlated insulator states of MATBG using gate voltage or electric displacement field. These experiments unlock the potential to broadly incorporate this new switchable moiré superconductor into highly tunable superconducting electronics.
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Affiliation(s)
- Dahlia R Klein
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel.
| | - Li-Qiao Xia
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - David MacNeill
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba, Japan
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20
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Elfeky B, Cuozzo JJ, Lotfizadeh N, Schiela WF, Farzaneh SM, Strickland WM, Langone D, Rossi E, Shabani J. Evolution of 4π-Periodic Supercurrent in the Presence of an In-Plane Magnetic Field. ACS NANO 2023; 17:4650-4658. [PMID: 36800544 PMCID: PMC10018771 DOI: 10.1021/acsnano.2c10880] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/01/2022] [Accepted: 02/15/2023] [Indexed: 06/18/2023]
Abstract
In the presence of a 4π-periodic contribution to the current phase relation, for example in topological Josephson junctions, odd Shapiro steps are expected to be missing. While missing odd Shapiro steps have been observed in several material systems and interpreted in the context of topological superconductivity, they have also been observed in topologically trivial junctions. Here, we study the evolution of such trivial missing odd Shapiro steps in Al-InAs junctions in the presence of an in-plane magnetic field Bθ. We find that the odd steps reappear at a crossover Bθ value, exhibiting an in-plane field angle anisotropy that depends on spin-orbit coupling effects. We interpret this behavior by theoretically analyzing the Andreev bound state spectrum and the transitions induced by the nonadiabatic dynamics of the junction and attribute the observed anisotropy to mode-to-mode coupling. Our results highlight the complex phenomenology of missing Shapiro steps and the underlying current phase relations in planar Josephson junctions designed to realize Majorana states.
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Affiliation(s)
- Bassel
Heiba Elfeky
- Center
for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, United States
| | - Joseph J. Cuozzo
- Department
of Physics, William & Mary, Williamsburg, Virginia 23187, United States
| | - Neda Lotfizadeh
- Center
for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, United States
| | - William F. Schiela
- Center
for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, United States
| | - Seyed M. Farzaneh
- Center
for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, United States
| | - William M. Strickland
- Center
for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, United States
| | - Dylan Langone
- Center
for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, United States
| | - Enrico Rossi
- Department
of Physics, William & Mary, Williamsburg, Virginia 23187, United States
| | - Javad Shabani
- Center
for Quantum Information Physics, Department of Physics, New York University, New York, New York 10003, United States
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21
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Haxell DZ, Cheah E, Křížek F, Schott R, Ritter MF, Hinderling M, Belzig W, Bruder C, Wegscheider W, Riel H, Nichele F. Measurements of Phase Dynamics in Planar Josephson Junctions and SQUIDs. PHYSICAL REVIEW LETTERS 2023; 130:087002. [PMID: 36898094 DOI: 10.1103/physrevlett.130.087002] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2022] [Revised: 09/15/2022] [Accepted: 01/19/2023] [Indexed: 06/18/2023]
Abstract
We experimentally investigate the stochastic phase dynamics of planar Josephson junctions (JJs) and superconducting quantum interference devices (SQUIDs) defined in epitaxial InAs/Al heterostructures, and characterized by a large ratio of Josephson energy to charging energy. We observe a crossover from a regime of macroscopic quantum tunneling to one of phase diffusion as a function of temperature, where the transition temperature T^{*} is gate-tunable. The switching probability distributions are shown to be consistent with a small shunt capacitance and moderate damping, resulting in a switching current which is a small fraction of the critical current. Phase locking between two JJs leads to a difference in switching current between that of a JJ measured in isolation and that of the same JJ measured in an asymmetric SQUID loop. In the case of the loop, T^{*} is also tuned by a magnetic flux.
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Affiliation(s)
- D Z Haxell
- IBM Research Europe-Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - E Cheah
- Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland
| | - F Křížek
- IBM Research Europe-Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
- Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland
| | - R Schott
- Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland
| | - M F Ritter
- IBM Research Europe-Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - M Hinderling
- IBM Research Europe-Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - W Belzig
- Fachbereich Physik, Universität Konstanz, D-78457 Konstanz, Germany
| | - C Bruder
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland
| | - W Wegscheider
- Solid State Physics Laboratory, ETH Zurich, 8093 Zurich, Switzerland
| | - H Riel
- IBM Research Europe-Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
| | - F Nichele
- IBM Research Europe-Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
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22
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Butseraen G, Ranadive A, Aparicio N, Rafsanjani Amin K, Juyal A, Esposito M, Watanabe K, Taniguchi T, Roch N, Lefloch F, Renard J. A gate-tunable graphene Josephson parametric amplifier. NATURE NANOTECHNOLOGY 2022; 17:1153-1158. [PMID: 36280762 DOI: 10.1038/s41565-022-01235-9] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2022] [Accepted: 09/07/2022] [Indexed: 06/16/2023]
Abstract
With a large portfolio of elemental quantum components, superconducting quantum circuits have contributed to advances in microwave quantum optics1. Of these elements, quantum-limited parametric amplifiers2-4 are essential for low noise readout of quantum systems whose energy range is intrinsically low (tens of μeV)5,6. They are also used to generate non-classical states of light that can be a resource for quantum enhanced detection7. Superconducting parametric amplifiers, such as quantum bits, typically use a Josephson junction as a source of magnetically tunable and dissipation-free non-linearity. In recent years, efforts have been made to introduce semiconductor weak links as electrically tunable non-linear elements, with demonstrations of microwave resonators and quantum bits using semiconductor nanowires8,9, a two-dimensional electron gas10, carbon nanotubes11 and graphene12,13. However, given the challenge of balancing non-linearity, dissipation, participation and energy scale, parametric amplifiers have not yet been implemented with a semiconductor weak link. Here, we demonstrate a parametric amplifier leveraging a graphene Josephson junction and show that its working frequency is widely tunable with a gate voltage. We report gain exceeding 20 dB and noise performance close to the standard quantum limit. Our results expand the toolset for electrically tunable superconducting quantum circuits. They also offer opportunities for the development of quantum technologies such as quantum computing, quantum sensing and for fundamental science14.
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Affiliation(s)
- Guilliam Butseraen
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Arpit Ranadive
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Nicolas Aparicio
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Kazi Rafsanjani Amin
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
- Université Grenoble Alpes, CEA, LETI, Grenoble, France
| | - Abhishek Juyal
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - Martina Esposito
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
- CNR-SPIN Complesso di Monte S. Angelo, Napoli, Italy
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Nicolas Roch
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France
| | - François Lefloch
- Université Grenoble Alpes, CEA, Grenoble INP, IRIG-PHELIQS, Grenoble, France
| | - Julien Renard
- Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, Grenoble, France.
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23
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Sarkar J, Salunkhe KV, Mandal S, Ghatak S, Marchawala AH, Das I, Watanabe K, Taniguchi T, Vijay R, Deshmukh MM. Quantum-noise-limited microwave amplification using a graphene Josephson junction. NATURE NANOTECHNOLOGY 2022; 17:1147-1152. [PMID: 36309589 DOI: 10.1038/s41565-022-01223-z] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/29/2022] [Accepted: 08/18/2022] [Indexed: 06/16/2023]
Abstract
Josephson junctions (JJs) and their tunable properties, including their nonlinearities, play an important role in superconducting qubits and amplifiers. JJs together with the circuit quantum electrodynamics architecture form many key components of quantum information processing1. In quantum circuits, low-noise amplification of feeble microwave signals is essential, and Josephson parametric amplifiers (JPAs)2 are the widely used devices. The existing JPAs are based on Al-AlOx-Al tunnel junctions realized in a superconducting quantum interference device geometry, where magnetic flux is the knob for tuning the frequency. Recent experimental realizations of two-dimensional (2D) van der Waals JJs3-5 provide an opportunity to implement various circuit quantum electrodynamics devices6-8 with the added advantage of tuning the junction properties and the operating point using a gate potential. While other components of a possible 2D van der Waals circuit quantum electrodynamics architecture have been demonstrated, a quantum-noise-limited amplifier, an essential component, has not been realized, to the best of our knowledge. Here we implement a quantum-noise-limited JPA using a graphene JJ, that has a linear resonance gate tunability of 3.5 GHz. We report 24 dB amplification with 10 MHz bandwidth and -130 dBm saturation power, a performance on par with the best single-junction JPAs2,9. Importantly, our gate-tunable JPA works in the quantum-limited noise regime, which makes it an attractive option for highly sensitive signal processing. Our work has implications for novel bolometers; the low heat capacity of graphene together with JJ nonlinearity can result in an extremely sensitive microwave bolometer embedded inside a quantum-noise-limited amplifier. In general, this work will open up the exploration of scalable device architectures of 2D van der Waals materials by integrating a sensor with the quantum amplifier.
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Affiliation(s)
- Joydip Sarkar
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India
| | - Kishor V Salunkhe
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India
| | - Supriya Mandal
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India
| | - Subhamoy Ghatak
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India
| | - Alisha H Marchawala
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India
| | - Ipsita Das
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - R Vijay
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India.
| | - Mandar M Deshmukh
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India.
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24
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Portolés E, Iwakiri S, Zheng G, Rickhaus P, Taniguchi T, Watanabe K, Ihn T, Ensslin K, de Vries FK. A tunable monolithic SQUID in twisted bilayer graphene. NATURE NANOTECHNOLOGY 2022; 17:1159-1164. [PMID: 36280761 DOI: 10.1038/s41565-022-01222-0] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2022] [Accepted: 09/05/2022] [Indexed: 06/16/2023]
Abstract
Magic-angle twisted bilayer graphene (MATBG) hosts a number of correlated states of matter that can be tuned by electrostatic doping1-4. Transport5,6 and scanning-probe7-9 experiments have shown evidence for band, correlated and Chern insulators along with superconductivity. This variety of in situ tunable states has allowed for the realization of tunable Josephson junctions10-12. However, although phase-coherent phenomena have been measured10-12, no control of the phase difference of the superconducting condensates has been demonstrated so far. Here we build on previous gate-defined junction realizations and form a superconducting quantum interference device13 (SQUID) in MATBG, where the superconducting phase difference is controlled through the magnetic field. We observe magneto-oscillations of the critical current, demonstrating long-range coherence of superconducting charge carriers with an effective charge of 2e. We tune to both asymmetric and symmetric SQUID configurations by electrostatically controlling the critical currents through the junctions. This tunability allows us to study the inductances in the device, finding values of up to 2 μH. Furthermore, we directly probe the current-phase relation of one of the junctions of the device. Our results show that complex devices in MATBG can be realized and used to reveal the properties of the material. We envision our findings, together with the established history of applications SQUIDs have14-16, will foster the development of a wide range of devices such as phase-slip junctions17 or high kinetic inductance detectors18.
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Affiliation(s)
- Elías Portolés
- Solid State Physics Laboratory, ETH Zurich, Zurich, Switzerland.
| | - Shuichi Iwakiri
- Solid State Physics Laboratory, ETH Zurich, Zurich, Switzerland
| | - Giulia Zheng
- Solid State Physics Laboratory, ETH Zurich, Zurich, Switzerland
| | - Peter Rickhaus
- Solid State Physics Laboratory, ETH Zurich, Zurich, Switzerland
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Thomas Ihn
- Solid State Physics Laboratory, ETH Zurich, Zurich, Switzerland
- Quantum Center, ETH Zurich, Zurich, Switzerland
| | - Klaus Ensslin
- Solid State Physics Laboratory, ETH Zurich, Zurich, Switzerland.
- Quantum Center, ETH Zurich, Zurich, Switzerland.
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25
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Chirolli L, Yao NY, Moore JE. SWAP Gate between a Majorana Qubit and a Parity-Protected Superconducting Qubit. PHYSICAL REVIEW LETTERS 2022; 129:177701. [PMID: 36332252 DOI: 10.1103/physrevlett.129.177701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/07/2022] [Accepted: 09/15/2022] [Indexed: 06/16/2023]
Abstract
High fidelity quantum information processing requires a combination of fast gates and long-lived quantum memories. In this Letter, we propose a hybrid architecture, where a parity-protected superconducting qubit is directly coupled to a Majorana qubit, which plays the role of a quantum memory. The superconducting qubit is based upon a π-periodic Josephson junction realized with gate-tunable semiconducting wires, where the tunneling of individual Cooper pairs is suppressed. One of the wires additionally contains four Majorana zero modes that define a qubit. We demonstrate that this enables the implementation of a SWAP gate, allowing for the transduction of quantum information between the topological and conventional qubit. This architecture combines fast gates, which can be realized with the superconducting qubit, with a topologically protected Majorana memory.
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Affiliation(s)
- Luca Chirolli
- Department of Physics, University of California Berkeley, Berkeley, California 94720, USA
- Istituto Nanoscienze-CNR, I-56127 Pisa, Italy
| | - Norman Y Yao
- Department of Physics, University of California Berkeley, Berkeley, California 94720, USA
- Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
| | - Joel E Moore
- Department of Physics, University of California Berkeley, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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26
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Choi MS, Ali N, Ngo TD, Choi H, Oh B, Yang H, Yoo WJ. Recent Progress in 1D Contacts for 2D-Material-Based Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202408. [PMID: 35594170 DOI: 10.1002/adma.202202408] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2022] [Revised: 05/17/2022] [Indexed: 06/15/2023]
Abstract
Recent studies have intensively examined 2D materials (2DMs) as promising materials for use in future quantum devices due to their atomic thinness. However, a major limitation occurs when 2DMs are in contact with metals: a van der Waals (vdW) gap is generated at the 2DM-metal interfaces, which induces metal-induced gap states that are responsible for an uncontrollable Schottky barrier (SB), Fermi-level pinning (FLP), and high contact resistance (RC ), thereby substantially lowering the electronic mobility of 2DM-based devices. Here, vdW-gap-free 1D edge contact is reviewed for use in 2D devices with substantially suppressed carrier scattering of 2DMs with hexagonal boron nitride (hBN) encapsulation. The 1D contact further enables uniform carrier transport across multilayered 2DM channels, high-density transistor integration independent of scaling, and the fabrication of double-gate transistors suitable for demonstrating unique quantum phenomena of 2DMs. The existing 1D contact methods are reviewed first. As a promising technology toward the large-scale production of 2D devices, seamless lateral contacts are reviewed in detail. The electronic, optoelectronic, and quantum devices developed via 1D contacts are subsequently discussed. Finally, the challenges regarding the reliability of 1D contacts are addressed, followed by an outlook of 1D contact methods.
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Affiliation(s)
- Min Sup Choi
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, 16419, Korea
| | - Nasir Ali
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, 16419, Korea
| | - Tien Dat Ngo
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, 16419, Korea
| | - Hyungyu Choi
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, 16419, Korea
| | - Byungdu Oh
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, 16419, Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Korea
| | - Won Jong Yoo
- SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon, 16419, Korea
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27
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Carrad DJ, Stampfer L, Ols Teins DG, Petersen CEN, Khan SA, Krogstrup P, Jespersen TS. Photon-Assisted Tunneling of High-Order Multiple Andreev Reflections in Epitaxial Nanowire Josephson Junctions. NANO LETTERS 2022; 22:6262-6267. [PMID: 35862144 DOI: 10.1021/acs.nanolett.2c01840] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the origin of the energy spectrum of such hybrids is therefore a crucial goal. Here, we study Josephson junctions defined by shadow epitaxy on InAsSb/Al nanowires. The devices exhibit gate-tunable supercurrents at low temperatures and multiple Andreev reflections (MARs) at finite voltage bias. Under microwave irradiation, photon-assisted tunneling (PAT) of MARs produces characteristic oscillating sidebands at quantized energies, which depend on MAR order, n, in agreement with a recently suggested modification of the classical Tien-Gordon equation. The scaling of the quantized energy spacings with microwave frequency provides independent confirmation of the effective charge, ne, transferred by the nth-order tunneling process. The measurements suggest PAT as a powerful method for assigning the origin of low-energy spectral features in hybrid Josephson devices.
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Affiliation(s)
- Damon James Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800 Kgs. Lyngby, Denmark
| | - Lukas Stampfer
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Da Gs Ols Teins
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | | | - Sabbir A Khan
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Danish National Metrology Institute, Kogle Alle 5, 2970 Hørsholm, Denmark
| | - Peter Krogstrup
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Thomas Sand Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800 Kgs. Lyngby, Denmark
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28
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McLauchlan CK, Béri B. Fermion-Parity-Based Computation and Its Majorana-Zero-Mode Implementation. PHYSICAL REVIEW LETTERS 2022; 128:180504. [PMID: 35594115 DOI: 10.1103/physrevlett.128.180504] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/27/2021] [Accepted: 03/29/2022] [Indexed: 06/15/2023]
Abstract
Majorana zero modes (MZMs) promise a platform for topologically protected fermionic quantum computation. However, creating multiple MZMs and generating (directly or via measurements) the requisite transformations (e.g., braids) pose significant challenges. We introduce fermion-parity-based computation (FPBC): a measurement-based scheme, modeled on Pauli-based computation, that uses efficient classical processing to virtually increase the number of available MZMs and which, given magic state inputs, operates without transformations. FPBC requires all MZM parities to be measurable, but this conflicts with constraints in proposed MZM hardware. We thus introduce a design in which all parities are directly measurable and which is hence well suited for FPBC. While developing FPBC, we identify the "logical braid group" as the fermionic analog of the Clifford group.
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Affiliation(s)
| | - Benjamin Béri
- DAMTP, University of Cambridge, Wilberforce Road, Cambridge CB3 0WA, United Kingdom
- T.C.M. Group, Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom
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29
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Catto G, Liu W, Kundu S, Lahtinen V, Vesterinen V, Möttönen M. Microwave response of a metallic superconductor subject to a high-voltage gate electrode. Sci Rep 2022; 12:6822. [PMID: 35474123 PMCID: PMC9042855 DOI: 10.1038/s41598-022-10833-5] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/05/2022] [Accepted: 04/11/2022] [Indexed: 11/11/2022] Open
Abstract
Processes that lead to the critical-current suppression and change of impedance of a superconductor under the application of an external voltage is an active area of research, especially due to various possible technological applications. In particular, field-effect transistors and radiation detectors have been developed in the recent years, showing the potential for precision and sensitivity exceeding their normal-metal counterparts. In order to describe the phenomenon that leads to the critical-current suppression in metallic superconducting structures, a field-effect hypothesis has been formulated, stating that an electric field can penetrate the metallic superconductor and affect its characteristics. The existence of such an effect would imply the incompleteness of the underlying theory, and hence indicate an important gap in the general comprehension of superconductors. In addition to its theoretical value, a complete understanding of the phenomenon underneath the electric-field response of the superconductor is important in the light of the related technological applications. In this paper, we study the change of the characteristics of a superconductor implementing a coplanar-waveguide resonator as a tank circuit, by relating our measurements to the reactance and resistance of the material. Namely, we track the state of the superconductor at different voltages and resulting leakage currents of a nearby gate electrode which is not galvanically connected to the resonator. By comparing the effects of the leakage current and of a change in the temperature of the system, we conclude that the observed behaviour in the superconductor is mainly caused by the heat that is deposited by the leakage current, and bearing the experimental uncertainties, we are not able to observe the effect of the applied electric field in our sample. In addition, we present a relatively good quantitative agreement between the Mattis–Bardeen theory of a heated superconductor and the experimental observations. Importantly, we do not claim this work to nullify the results of previous works, but rather to provide inspiration for future more thorough experiments and analysis using the methods presented here.
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Affiliation(s)
- Giacomo Catto
- QCD Labs, QTF Centre of Excellence, Department of Applied Physics, Aalto University, P.O. Box 13500, 00076, Aalto, Finland.
| | - Wei Liu
- QCD Labs, QTF Centre of Excellence, Department of Applied Physics, Aalto University, P.O. Box 13500, 00076, Aalto, Finland. .,IQM, Keilaranta 19, 02150, Espoo, Finland.
| | - Suman Kundu
- QCD Labs, QTF Centre of Excellence, Department of Applied Physics, Aalto University, P.O. Box 13500, 00076, Aalto, Finland
| | - Valtteri Lahtinen
- QCD Labs, QTF Centre of Excellence, Department of Applied Physics, Aalto University, P.O. Box 13500, 00076, Aalto, Finland
| | - Visa Vesterinen
- QTF Centre of Excellence, VTT Technical Research Centre of Finland Ltd, P.O. Box 1000, 02044, Espoo, Finland
| | - Mikko Möttönen
- QCD Labs, QTF Centre of Excellence, Department of Applied Physics, Aalto University, P.O. Box 13500, 00076, Aalto, Finland.,QTF Centre of Excellence, VTT Technical Research Centre of Finland Ltd, P.O. Box 1000, 02044, Espoo, Finland
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30
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Schmitt TW, Connolly MR, Schleenvoigt M, Liu C, Kennedy O, Chávez-Garcia JM, Jalil AR, Bennemann B, Trellenkamp S, Lentz F, Neumann E, Lindström T, de Graaf SE, Berenschot E, Tas N, Mussler G, Petersson KD, Grützmacher D, Schüffelgen P. Integration of Topological Insulator Josephson Junctions in Superconducting Qubit Circuits. NANO LETTERS 2022; 22:2595-2602. [PMID: 35235321 DOI: 10.1021/acs.nanolett.1c04055] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe exotic quasiparticle excitations. Recent proposals for using circuit quantum electrodynamics (cQED) to detect topological superconductivity motivate the integration of novel topological materials in such circuits. Here, we report on the realization of superconducting transmon qubits implemented with (Bi0.06Sb0.94)2Te3 topological insulator (TI) JJs using ultrahigh vacuum fabrication techniques. Microwave losses on our substrates, which host monolithically integrated hardmasks used for the selective area growth of TI nanostructures, imply microsecond limits to relaxation times and, thus, their compatibility with strong-coupling cQED. We use the cavity-qubit interaction to show that the Josephson energy of TI-based transmons scales with their JJ dimensions and demonstrate qubit control as well as temporal quantum coherence. Our results pave the way for advanced investigations of topological materials in both novel Josephson and topological qubits.
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Affiliation(s)
- Tobias W Schmitt
- Institute for Semiconductor Nanoelectronics, Peter Grünberg Institute 9, Forschungszentrum Jülich & Jülich-Aachen Research Alliance (JARA), Forschungszentrum Jülich and RWTH Aachen University, 52428 Jülich, Germany
- JARA-Institute for Green IT, Peter Grünberg Institute 10, Forschungszentrum Jülich and RWTH Aachen University, 52062 Aachen, Germany
| | - Malcolm R Connolly
- Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom
- London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, London WC1H 0AH, United Kingdom
| | - Michael Schleenvoigt
- Institute for Semiconductor Nanoelectronics, Peter Grünberg Institute 9, Forschungszentrum Jülich & Jülich-Aachen Research Alliance (JARA), Forschungszentrum Jülich and RWTH Aachen University, 52428 Jülich, Germany
| | - Chenlu Liu
- Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom
| | - Oscar Kennedy
- London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, London WC1H 0AH, United Kingdom
| | - José M Chávez-Garcia
- Microsoft Quantum Lab Copenhagen and Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Abdur R Jalil
- Institute for Semiconductor Nanoelectronics, Peter Grünberg Institute 9, Forschungszentrum Jülich & Jülich-Aachen Research Alliance (JARA), Forschungszentrum Jülich and RWTH Aachen University, 52428 Jülich, Germany
| | - Benjamin Bennemann
- Institute for Semiconductor Nanoelectronics, Peter Grünberg Institute 9, Forschungszentrum Jülich & Jülich-Aachen Research Alliance (JARA), Forschungszentrum Jülich and RWTH Aachen University, 52428 Jülich, Germany
| | - Stefan Trellenkamp
- Helmholtz Nano Facility, Forschungszentrum Jülich, 52428 Jülich, Germany
| | - Florian Lentz
- Helmholtz Nano Facility, Forschungszentrum Jülich, 52428 Jülich, Germany
| | - Elmar Neumann
- Helmholtz Nano Facility, Forschungszentrum Jülich, 52428 Jülich, Germany
| | - Tobias Lindström
- National Physical Laboratory, Teddington TW11 0LW, United Kingdom
| | | | - Erwin Berenschot
- MESA+ Institute, University of Twente, 7500AE Enschede, The Netherlands
| | - Niels Tas
- MESA+ Institute, University of Twente, 7500AE Enschede, The Netherlands
| | - Gregor Mussler
- Institute for Semiconductor Nanoelectronics, Peter Grünberg Institute 9, Forschungszentrum Jülich & Jülich-Aachen Research Alliance (JARA), Forschungszentrum Jülich and RWTH Aachen University, 52428 Jülich, Germany
| | - Karl D Petersson
- Microsoft Quantum Lab Copenhagen and Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Detlev Grützmacher
- Institute for Semiconductor Nanoelectronics, Peter Grünberg Institute 9, Forschungszentrum Jülich & Jülich-Aachen Research Alliance (JARA), Forschungszentrum Jülich and RWTH Aachen University, 52428 Jülich, Germany
- JARA-Institute for Green IT, Peter Grünberg Institute 10, Forschungszentrum Jülich and RWTH Aachen University, 52062 Aachen, Germany
| | - Peter Schüffelgen
- Institute for Semiconductor Nanoelectronics, Peter Grünberg Institute 9, Forschungszentrum Jülich & Jülich-Aachen Research Alliance (JARA), Forschungszentrum Jülich and RWTH Aachen University, 52428 Jülich, Germany
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31
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Badawy G, Zhang B, Rauch T, Momand J, Koelling S, Jung J, Gazibegovic S, Moutanabbir O, Kooi BJ, Botti S, Verheijen MA, Frolov SM, Bakkers EPAM. Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105722. [PMID: 35182039 PMCID: PMC9036012 DOI: 10.1002/advs.202105722] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2021] [Revised: 01/20/2022] [Indexed: 06/09/2023]
Abstract
Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, that is, strong spin-orbit interaction and large Landé g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topological particles research. Here, the combination of the II-VI cadmium telluride (CdTe) with the III-V InSb in the form of core-shell (InSb-CdTe) nanowires is investigated and potential applications based on the electronic structure of the InSb-CdTe interface and the epitaxy of CdTe on the InSb nanowires are explored. The electronic structure of the InSb-CdTe interface using density functional theory is determined and a type-I band alignment is extracted with a small conduction band offset ( ⩽0.3 eV). These results indicate the potential application of these shells for surface passivation or as tunnel barriers in combination with superconductors. In terms of structural quality, it is demonstrated that the lattice-matched CdTe can be grown epitaxially on the InSb nanowires without interfacial strain or defects. These shells do not introduce disorder to the InSb nanowires as indicated by the comparable field-effect mobility measured for both uncapped and CdTe-capped nanowires.
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Affiliation(s)
- Ghada Badawy
- Applied Physics DepartmentEindhoven University of TechnologyEindhoven5600 MBNetherlands
| | - Bomin Zhang
- Department of Physics and AstronomyUniversity of PittsburghPittsburghPA15260USA
| | - Tomáš Rauch
- Institut für Festkörpertheorie und ‐optikFriedrich‐Schiller‐Universität JenaJena07743Germany
| | - Jamo Momand
- Zernike Institute for Advanced MaterialsUniversity of GroningenGroningen9747 AGNetherlands
| | - Sebastian Koelling
- Department of Engineering PhysicsEcole Polytechnique de MontréalC.P. 6079, Succ. Centre‐VilleMontréalQuébecH3C 3A7Canada
| | - Jason Jung
- Applied Physics DepartmentEindhoven University of TechnologyEindhoven5600 MBNetherlands
| | - Sasa Gazibegovic
- Applied Physics DepartmentEindhoven University of TechnologyEindhoven5600 MBNetherlands
| | - Oussama Moutanabbir
- Department of Engineering PhysicsEcole Polytechnique de MontréalC.P. 6079, Succ. Centre‐VilleMontréalQuébecH3C 3A7Canada
| | - Bart J. Kooi
- Zernike Institute for Advanced MaterialsUniversity of GroningenGroningen9747 AGNetherlands
| | - Silvana Botti
- Institut für Festkörpertheorie und ‐optikFriedrich‐Schiller‐Universität JenaJena07743Germany
| | - Marcel A. Verheijen
- Eurofins Material Science Netherlands B.V.High Tech Campus 11Eindhoven5656 AENetherlands
| | - Sergey M. Frolov
- Department of Physics and AstronomyUniversity of PittsburghPittsburghPA15260USA
| | - Erik P. A. M. Bakkers
- Applied Physics DepartmentEindhoven University of TechnologyEindhoven5600 MBNetherlands
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32
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Telesio F, Carrega M, Cappelli G, Iorio A, Crippa A, Strambini E, Giazotto F, Serrano-Ruiz M, Peruzzini M, Heun S. Evidence of Josephson Coupling in a Few-Layer Black Phosphorus Planar Josephson Junction. ACS NANO 2022; 16:3538-3545. [PMID: 35099941 PMCID: PMC8945388 DOI: 10.1021/acsnano.1c09315] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/21/2021] [Accepted: 01/26/2022] [Indexed: 06/14/2023]
Abstract
Setting up strong Josephson coupling in van der Waals materials in close proximity to superconductors offers several opportunities both to inspect fundamental physics and to develop cryogenic quantum technologies. Here we show evidence of Josephson coupling in a planar few-layer black phosphorus junction. The planar geometry allows us to probe the junction behavior by means of external gates, at different carrier concentrations. Clear signatures of Josephson coupling are demonstrated by measuring supercurrent flow through the junction at milli-Kelvin temperatures. Manifestation of a Fraunhofer pattern with a transverse magnetic field is also reported, confirming the Josephson coupling. These findings represent evidence of proximity Josephson coupling in a planar junction based on a van der Waals material beyond graphene and will expedite further studies, exploiting the peculiar properties of exfoliated black phosphorus thin flakes.
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Affiliation(s)
- Francesca Telesio
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | | | - Giulio Cappelli
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Andrea Iorio
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Alessandro Crippa
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Elia Strambini
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Francesco Giazotto
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | | | | | - Stefan Heun
- NEST,
Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
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33
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Phan D, Senior J, Ghazaryan A, Hatefipour M, Strickland WM, Shabani J, Serbyn M, Higginbotham AP. Detecting Induced p±ip Pairing at the Al-InAs Interface with a Quantum Microwave Circuit. PHYSICAL REVIEW LETTERS 2022; 128:107701. [PMID: 35333085 DOI: 10.1103/physrevlett.128.107701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 12/15/2021] [Accepted: 01/31/2022] [Indexed: 06/14/2023]
Abstract
Superconductor-semiconductor hybrid devices are at the heart of several proposed approaches to quantum information processing, but their basic properties remain to be understood. We embed a two-dimensional Al-InAs hybrid system in a resonant microwave circuit, probing the breakdown of superconductivity due to an applied magnetic field. We find a fingerprint from the two-component nature of the hybrid system, and quantitatively compare with a theory that includes the contribution of intraband p±ip pairing in the InAs, as well as the emergence of Bogoliubov-Fermi surfaces due to magnetic field. Separately resolving the Al and InAs contributions allows us to determine the carrier density and mobility in the InAs.
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Affiliation(s)
- D Phan
- IST Austria, Am Campus 1, 3400 Klosterneuburg, Austria
| | - J Senior
- IST Austria, Am Campus 1, 3400 Klosterneuburg, Austria
| | - A Ghazaryan
- IST Austria, Am Campus 1, 3400 Klosterneuburg, Austria
| | - M Hatefipour
- Department of Physics, New York University, New York, New York 10003, USA
| | - W M Strickland
- Department of Physics, New York University, New York, New York 10003, USA
| | - J Shabani
- Department of Physics, New York University, New York, New York 10003, USA
| | - M Serbyn
- IST Austria, Am Campus 1, 3400 Klosterneuburg, Austria
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34
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Stampfer L, Carrad DJ, Olsteins D, Petersen CEN, Khan SA, Krogstrup P, Jespersen TS. Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108878. [PMID: 35050545 DOI: 10.1002/adma.202108878] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2021] [Revised: 12/29/2021] [Indexed: 06/14/2023]
Abstract
Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of half-shell InAsSb/Al nanowires is studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibit periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution is tunable by a gate potential as expected from electrostatic models.
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Affiliation(s)
- Lukas Stampfer
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
| | - Damon J Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
| | - Dags Olsteins
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
| | - Christian E N Petersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
| | - Sabbir A Khan
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
- Microsoft Quantum Materials Lab Copenhagen, Lyngby, 2800, Denmark
| | - Peter Krogstrup
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
- Microsoft Quantum Materials Lab Copenhagen, Lyngby, 2800, Denmark
| | - Thomas S Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, Copenhagen, 2100, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, Lyngby, 2800, Denmark
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35
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Alfieri A, Anantharaman SB, Zhang H, Jariwala D. Nanomaterials for Quantum Information Science and Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109621. [PMID: 35139247 DOI: 10.1002/adma.202109621] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.
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Affiliation(s)
- Adam Alfieri
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Huiqin Zhang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
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36
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Zhang P, Wu H, Chen J, Khan SA, Krogstrup P, Pekker D, Frolov SM. Signatures of Andreev Blockade in a Double Quantum Dot Coupled to a Superconductor. PHYSICAL REVIEW LETTERS 2022; 128:046801. [PMID: 35148137 DOI: 10.1103/physrevlett.128.046801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2021] [Revised: 10/01/2021] [Accepted: 01/07/2022] [Indexed: 06/14/2023]
Abstract
We investigate an electron transport blockade regime in which a spin triplet localized in the path of current is forbidden from entering a spin-singlet superconductor. To stabilize the triplet, a double quantum dot is created electrostatically near a superconducting Al lead in an InAs nanowire. The quantum dot closest to the normal lead exhibits Coulomb diamonds, and the dot closest to the superconducting lead exhibits Andreev bound states and an induced gap. The experimental observations compare favorably to a theoretical model of Andreev blockade, named so because the triplet double dot configuration suppresses Andreev reflections. Observed leakage currents can be accounted for by finite temperature. We observe the predicted quadruple level degeneracy points of high current and a periodic conductance pattern controlled by the occupation of the normal dot. Even-odd transport asymmetry is lifted with increased temperature and magnetic field. This blockade phenomenon can be used to study spin structure of superconductors. It may also find utility in quantum computing devices that use Andreev or Majorana states.
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Affiliation(s)
- Po Zhang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA
| | - Hao Wu
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA
| | - Jun Chen
- Department of Electrical and Computer Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA
| | - Sabbir A Khan
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Peter Krogstrup
- Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - David Pekker
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA
| | - Sergey M Frolov
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA
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37
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Ritter M, Schmid H, Sousa M, Staudinger P, Haxell DZ, Mueed MA, Madon B, Pushp A, Riel H, Nichele F. Semiconductor Epitaxy in Superconducting Templates. NANO LETTERS 2021; 21:9922-9929. [PMID: 34788993 PMCID: PMC8662718 DOI: 10.1021/acs.nanolett.1c03133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/13/2021] [Revised: 11/10/2021] [Indexed: 06/13/2023]
Abstract
Integration of high-quality semiconductor-superconductor devices into scalable and complementary metal-oxide-semiconductor compatible architectures remains an outstanding challenge, currently hindering their practical implementation. Here, we demonstrate growth of InAs nanowires monolithically integrated on Si inside lateral cavities containing superconducting TiN elements. This technique allows growth of hybrid devices characterized by sharp semiconductor-superconductor interfaces and with alignment along arbitrary crystallographic directions. Electrical characterization at low temperature reveals proximity induced superconductivity in InAs via a transparent interface.
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Affiliation(s)
- Markus
F. Ritter
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
| | - Heinz Schmid
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
| | - Marilyne Sousa
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
| | | | - Daniel Z. Haxell
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
| | - M. A. Mueed
- IBM
Almaden Research Center, San Jose, California 95120, United States
| | - Benjamin Madon
- IBM
Almaden Research Center, San Jose, California 95120, United States
| | - Aakash Pushp
- IBM
Almaden Research Center, San Jose, California 95120, United States
| | - Heike Riel
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
| | - Fabrizio Nichele
- IBM
Research Europe, Säumerstrasse
4, 8803 Rüschlikon, Switzerland
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38
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Bjergfelt MS, Carrad DJ, Kanne T, Johnson E, Fiordaliso EM, Jespersen TS, Nygård J. Superconductivity and Parity Preservation in As-Grown In Islands on InAs Nanowires. NANO LETTERS 2021; 21:9875-9881. [PMID: 34807620 DOI: 10.1021/acs.nanolett.1c02487] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We report in situ synthesis of crystalline indium islands on InAs nanowires grown by molecular beam epitaxy. Structural analysis by transmission electron microscopy showed that In crystals grew in a tetragonal body-centered crystal structure within two families of orientations relative to wurtzite InAs. The crystalline islands had lengths < 500 nm and low-energy surfaces, suggesting that growth was driven mainly by surface energy minimization. Electrical transport through In/InAs devices exhibited Cooper pair charging, evidencing charge parity preservation and a pristine In/InAs interface, with an induced superconducting gap ∼ 0.45 meV. Cooper pair charging persisted to temperatures > 1.2 K and magnetic fields ∼ 0.7 T, demonstrating that In/InAs hybrids belong to an expanding class of semiconductor/superconductor hybrids operating over a wider parameter space than state-of-the-art Al-based hybrids. Engineering crystal morphology while isolating single islands using shadow epitaxy provides an interesting alternative to previous semiconductor/superconductor hybrid morphologies and device geometries.
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Affiliation(s)
- Martin Saurbrey Bjergfelt
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Damon J Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kongens Lyngby Denmark
| | - Thomas Kanne
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Erik Johnson
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- DTU Mechanical Engineering, Technical University of Denmark, 2800 Kongens Lyngby Denmark
| | | | - Thomas Sand Jespersen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
- Department of Energy Conversion and Storage, Technical University of Denmark, 2800 Kongens Lyngby Denmark
| | - Jesper Nygård
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
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39
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Elalaily T, Kürtössy O, Scherübl Z, Berke M, Fülöp G, Lukács IE, Kanne T, Nygård J, Watanabe K, Taniguchi T, Makk P, Csonka S. Gate-Controlled Supercurrent in Epitaxial Al/InAs Nanowires. NANO LETTERS 2021; 21:9684-9690. [PMID: 34726405 PMCID: PMC8631737 DOI: 10.1021/acs.nanolett.1c03493] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/08/2021] [Revised: 10/20/2021] [Indexed: 06/13/2023]
Abstract
Gate-controlled supercurrent (GCS) in superconducting nanobridges has recently attracted attention as a means to create superconducting switches. Despite the clear advantages for applications, the microscopic mechanism of this effect is still under debate. In this work, we realize GCS for the first time in a highly crystalline superconductor epitaxially grown on an InAs nanowire. We show that the supercurrent in the epitaxial Al layer can be switched to the normal state by applying ≃±23 V on a bottom gate insulated from the nanowire by a crystalline hBN layer. Our extensive study of the temperature and magnetic field dependencies suggests that the electric field is unlikely to be the origin of GCS in our device. Though hot electron injection alone cannot explain our experimental findings, a very recent non-equilibrium phonons based picture is compatible with most of our results.
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Affiliation(s)
- Tosson Elalaily
- Department
of Physics and Nanoelectronics “Momentum” Research Group
of the Hungarian Academy of Sciences, Budapest
University of Technology and Economics, Budafoki ut 8, 1111 Budapest, Hungary
- Department
of Physics, Faculty of Science, Tanta University, Al-Geish Street, 31527 Tanta, Gharbia, Egypt
| | - Olivér Kürtössy
- Department
of Physics and Nanoelectronics “Momentum” Research Group
of the Hungarian Academy of Sciences, Budapest
University of Technology and Economics, Budafoki ut 8, 1111 Budapest, Hungary
| | - Zoltán Scherübl
- Department
of Physics and Nanoelectronics “Momentum” Research Group
of the Hungarian Academy of Sciences, Budapest
University of Technology and Economics, Budafoki ut 8, 1111 Budapest, Hungary
- Université
Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, 38000 Grenoble, France
| | - Martin Berke
- Department
of Physics and Nanoelectronics “Momentum” Research Group
of the Hungarian Academy of Sciences, Budapest
University of Technology and Economics, Budafoki ut 8, 1111 Budapest, Hungary
| | - Gergö Fülöp
- Department
of Physics and Nanoelectronics “Momentum” Research Group
of the Hungarian Academy of Sciences, Budapest
University of Technology and Economics, Budafoki ut 8, 1111 Budapest, Hungary
| | - István Endre Lukács
- Center
for Energy Research, Institute of Technical
Physics and Material Science, Konkoly-Thege Miklós út 29-33., H-1121 Budapest, Hungary
| | - Thomas Kanne
- Center for
Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen, Denmark
| | - Jesper Nygård
- Center for
Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen, Denmark
| | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Péter Makk
- Department
of Physics and Nanoelectronics “Momentum” Research Group
of the Hungarian Academy of Sciences, Budapest
University of Technology and Economics, Budafoki ut 8, 1111 Budapest, Hungary
| | - Szabolcs Csonka
- Department
of Physics and Nanoelectronics “Momentum” Research Group
of the Hungarian Academy of Sciences, Budapest
University of Technology and Economics, Budafoki ut 8, 1111 Budapest, Hungary
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40
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Kürtössy O, Scherübl Z, Fülöp G, Lukács IE, Kanne T, Nygård J, Makk P, Csonka S. Andreev Molecule in Parallel InAs Nanowires. NANO LETTERS 2021; 21:7929-7937. [PMID: 34538054 PMCID: PMC8517978 DOI: 10.1021/acs.nanolett.1c01956] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/19/2021] [Indexed: 06/13/2023]
Abstract
Coupling individual atoms fundamentally changes the state of matter: electrons bound to atomic cores become delocalized turning an insulating state to a metallic one. A chain of atoms could lead to more exotic states if the tunneling takes place via the superconducting vacuum and can induce topologically protected excitations like Majorana or parafermions. Although coupling a single atom to a superconductor is well studied, the hybridization of two sites with individual tunability was not reported yet. The peculiar vacuum of the Bardeen-Cooper-Schrieffer (BCS) condensate opens the way to annihilate or generate two electrons from the bulk resulting in a so-called Andreev molecular state. By employing parallel nanowires with an Al shell, two artificial atoms were created at a minimal distance with an epitaxial superconducting link between. Hybridization via the BCS vacuum was observed and the spectrum of an Andreev molecule as a function of level positions was explored for the first time.
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Affiliation(s)
- Olivér Kürtössy
- Department
of Physics and Nanoelectronics “Momentum” Research Group
of the Hungarian Academy of Sciences, Budapest
University of Technology and Economics, Budafoki út 8, 1111 Budapest, Hungary
| | - Zoltán Scherübl
- Department
of Physics and Nanoelectronics “Momentum” Research Group
of the Hungarian Academy of Sciences, Budapest
University of Technology and Economics, Budafoki út 8, 1111 Budapest, Hungary
- University
of Grenoble Alpes, CEA, Grenoble INP, IRIG, PHELIQS, 38000 Grenoble, France
| | - Gergö Fülöp
- Department
of Physics and Nanoelectronics “Momentum” Research Group
of the Hungarian Academy of Sciences, Budapest
University of Technology and Economics, Budafoki út 8, 1111 Budapest, Hungary
| | - István Endre Lukács
- Center
for Energy Research, Institute of Technical
Physics and Material Science, Konkoly-Thege Miklós út 29-33, H-1121, Budapest, Hungary
| | - Thomas Kanne
- Center
for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Jesper Nygård
- Center
for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark
| | - Péter Makk
- Department
of Physics and Nanoelectronics “Momentum” Research Group
of the Hungarian Academy of Sciences, Budapest
University of Technology and Economics, Budafoki út 8, 1111 Budapest, Hungary
| | - Szabolcs Csonka
- Department
of Physics and Nanoelectronics “Momentum” Research Group
of the Hungarian Academy of Sciences, Budapest
University of Technology and Economics, Budafoki út 8, 1111 Budapest, Hungary
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41
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Delaforce J, Sistani M, Kramer RBG, Luong MA, Roch N, Weber WM, den Hertog MI, Robin E, Naud C, Lugstein A, Buisson O. Al-Ge-Al Nanowire Heterostructure: From Single-Hole Quantum Dot to Josephson Effect. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101989. [PMID: 34365674 DOI: 10.1002/adma.202101989] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/12/2021] [Revised: 05/31/2021] [Indexed: 06/13/2023]
Abstract
Superconductor-semiconductor-superconductor heterostructures are attractive for both fundamental studies of quantum phenomena in low-dimensional hybrid systems as well as for future high-performance low power dissipating nanoelectronic and quantum devices. In this work, ultrascaled monolithic Al-Ge-Al nanowire heterostructures featuring monocrystalline Al leads and abrupt metal-semiconductor interfaces are used to probe the low-temperature transport in intrinsic Ge (i-Ge) quantum dots. In particular, demonstrating the ability to tune the Ge quantum dot device from completely insulating, through a single-hole-filling quantum dot regime, to a supercurrent regime, resembling a Josephson field effect transistor with a maximum critical current of 10 nA at a temperature of 390 mK. The realization of a Josephson field-effect transistor with high junction transparency provides a mechanism to study sub-gap transport mediated by Andreev states. The presented results reveal a promising intrinsic Ge-based architecture for hybrid superconductor-semiconductor devices for the study of Majorana zero modes and key components of quantum computing such as gatemons or gate tunable superconducting quantum interference devices.
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Affiliation(s)
- Jovian Delaforce
- Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France
| | - Masiar Sistani
- Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria
| | - Roman B G Kramer
- Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France
| | - Minh A Luong
- Université Grenoble Alpes, CEA, IRIG-DEPHY, F-38054, Grenoble, 38054, France
| | - Nicolas Roch
- Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France
| | - Walter M Weber
- Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria
| | | | - Eric Robin
- Université Grenoble Alpes, CEA, IRIG-DEPHY, F-38054, Grenoble, 38054, France
| | - Cecile Naud
- Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France
| | - Alois Lugstein
- Institute of Solid State Electronics, TU Wien, Gußhausstraße 25-25a, Vienna, 1040, Austria
| | - Olivier Buisson
- Institut NEEL UPR2940, Université Grenoble Alpes, CNRS, Grenoble, 38042, France
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42
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Bobkova IV, Bobkov AM, Silaev MA. Dynamic Spin-Triplet Order Induced by Alternating Electric Fields in Superconductor-Ferromagnet-Superconductor Josephson Junctions. PHYSICAL REVIEW LETTERS 2021; 127:147701. [PMID: 34652200 DOI: 10.1103/physrevlett.127.147701] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2021] [Accepted: 09/01/2021] [Indexed: 06/13/2023]
Abstract
Dynamic states offer extended possibilities to control the properties of quantum matter. Recent efforts are focused on studying the ordered states which appear exclusively under the time-dependent drives. Here, we demonstrate a class of systems which feature dynamic spin-triplet superconducting order stimulated by the alternating electric field. The effect is based on the interplay of ferromagnetism, interfacial spin-orbital coupling, and the condensate motion driven by the field, which converts hidden static p-wave order, produced by the joint action of the ferromagnetism and the spin-orbital coupling, into dynamic s-wave equal-spin-triplet correlations. We demonstrate that the critical current of Josephson junctions hosting these states is proportional to the electromagnetic power, supplied either by the external irradiation or by the ac current source. Based on these unusual properties we propose the scheme of a Josephson transistor which can be switched by the ac voltage and demonstrates an even-numbered sequence of Shapiro steps. Combining the photoactive Josephson junctions with recently discovered Josephson phase batteries we find photomagnetic SQUID devices which can generate spontaneous magnetic fields while being exposed to irradiation.
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Affiliation(s)
- I V Bobkova
- Institute of Solid State Physics, Chernogolovka, Moscow region, 142432 Russia
- Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- National Research University Higher School of Economics, Moscow 101000, Russia
| | - A M Bobkov
- Institute of Solid State Physics, Chernogolovka, Moscow region, 142432 Russia
| | - M A Silaev
- Moscow Institute of Physics and Technology, Dolgoprudny 141700, Russia
- Department of Physics, Nanoscience Center, University of Jyväskylä, 40014 Jyväskylä, Finland
- Institute for Physics of Microstructures, Russian Academy of Sciences, 603950 Nizhny Novgorod, GSP-105, Russia
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43
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Environment-induced overheating phenomena in Au-nanowire based Josephson junctions. Sci Rep 2021; 11:15274. [PMID: 34315993 PMCID: PMC8316400 DOI: 10.1038/s41598-021-94720-5] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/25/2021] [Accepted: 07/14/2021] [Indexed: 11/08/2022] Open
Abstract
Unlike conventional planar Josephson junctions, nanowire-based devices have a bridge geometry with a peculiar coupling to environment that can favor non-equilibrium electronic phenomena. Here we measure the influence of the electron bath overheating on critical current of several bridge-like junctions built on a single Au-nanowire. Using the Usadel theory and applying the two-fluid description for the normal and superconducting components of the flowing currents, we reveal and explain the mutual influence of the neighbouring junctions on their characteristics through various processes of the electron gas overheating. Our results provide additional ways to control nanowire-based superconducting devices.
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44
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Hays M, Fatemi V, Bouman D, Cerrillo J, Diamond S, Serniak K, Connolly T, Krogstrup P, Nygård J, Levy Yeyati A, Geresdi A, Devoret MH. Coherent manipulation of an Andreev spin qubit. Science 2021; 373:430-433. [PMID: 34437115 DOI: 10.1126/science.abf0345] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2021] [Accepted: 05/27/2021] [Indexed: 01/26/2023]
Abstract
Two promising architectures for solid-state quantum information processing are based on electron spins electrostatically confined in semiconductor quantum dots and the collective electrodynamic modes of superconducting circuits. Superconducting electrodynamic qubits involve macroscopic numbers of electrons and offer the advantage of larger coupling, whereas semiconductor spin qubits involve individual electrons trapped in microscopic volumes but are more difficult to link. We combined beneficial aspects of both platforms in the Andreev spin qubit: the spin degree of freedom of an electronic quasiparticle trapped in the supercurrent-carrying Andreev levels of a Josephson semiconductor nanowire. We performed coherent spin manipulation by combining single-shot circuit-quantum-electrodynamics readout and spin-flipping Raman transitions and found a spin-flip time T S = 17 microseconds and a spin coherence time T 2E = 52 nanoseconds. These results herald a regime of supercurrent-mediated coherent spin-photon coupling at the single-quantum level.
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Affiliation(s)
- M Hays
- Department of Applied Physics, Yale University, New Haven, CT 06520, USA.
| | - V Fatemi
- Department of Applied Physics, Yale University, New Haven, CT 06520, USA.
| | - D Bouman
- QuTech and Delft University of Technology, 2600 GA Delft, Netherlands.,Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands
| | - J Cerrillo
- Área de Física Aplicada, Universidad Politécnica de Cartagena, E-30202 Cartagena, Spain.,Departamento de Física Teórica de la Materia Condensada C-V, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
| | - S Diamond
- Department of Applied Physics, Yale University, New Haven, CT 06520, USA
| | - K Serniak
- Department of Applied Physics, Yale University, New Haven, CT 06520, USA
| | - T Connolly
- Department of Applied Physics, Yale University, New Haven, CT 06520, USA
| | - P Krogstrup
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
| | - J Nygård
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark
| | - A Levy Yeyati
- Departamento de Física Teórica de la Materia Condensada C-V, Universidad Autónoma de Madrid, E-28049 Madrid, Spain.,Condensed Matter Physics Center (IFIMAC) and Instituto Nicolás Cabrera, Universidad Autónoma de Madrid, E-28049 Madrid, Spain
| | - A Geresdi
- QuTech and Delft University of Technology, 2600 GA Delft, Netherlands.,Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, Netherlands.,Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE 41296 Gothenburg, Sweden
| | - M H Devoret
- Department of Applied Physics, Yale University, New Haven, CT 06520, USA.
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45
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Ramezani M, Sampaio IC, Watanabe K, Taniguchi T, Schönenberger C, Baumgartner A. Superconducting Contacts to a Monolayer Semiconductor. NANO LETTERS 2021; 21:5614-5619. [PMID: 34161104 PMCID: PMC8283752 DOI: 10.1021/acs.nanolett.1c00615] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2021] [Revised: 06/02/2021] [Indexed: 05/28/2023]
Abstract
We demonstrate superconducting vertical interconnect access (VIA) contacts to a monolayer of molybdenum disulfide (MoS2), a layered semiconductor with highly relevant electronic and optical properties. As a contact material we use MoRe, a superconductor with a high critical magnetic field and high critical temperature. The electron transport is mostly dominated by a single superconductor/normal conductor junction with a clear superconductor gap. In addition, we find MoS2 regions that are strongly coupled to the superconductor, resulting in resonant Andreev tunneling and junction-dependent gap characteristics, suggesting a superconducting proximity effect. Magnetoresistance measurements show that the bandstructure and the high intrinsic carrier mobility remain intact in the bulk of the MoS2. This type of VIA contact is applicable to a large variety of layered materials and superconducting contacts, opening up a path to monolayer semiconductors as a platform for superconducting hybrid devices.
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Affiliation(s)
- Mehdi Ramezani
- Department
of Physics, University of Basel, CH-4056, Basel, Switzerland
- Swiss
Nanoscience Institute, University of Basel, CH-4056, Basel, Switzerland
| | | | - Kenji Watanabe
- Research
Center for Functional Materials, National
Institute for Material Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International
Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Christian Schönenberger
- Department
of Physics, University of Basel, CH-4056, Basel, Switzerland
- Swiss
Nanoscience Institute, University of Basel, CH-4056, Basel, Switzerland
| | - Andreas Baumgartner
- Department
of Physics, University of Basel, CH-4056, Basel, Switzerland
- Swiss
Nanoscience Institute, University of Basel, CH-4056, Basel, Switzerland
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46
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Rodan-Legrain D, Cao Y, Park JM, de la Barrera SC, Randeria MT, Watanabe K, Taniguchi T, Jarillo-Herrero P. Highly tunable junctions and non-local Josephson effect in magic-angle graphene tunnelling devices. NATURE NANOTECHNOLOGY 2021; 16:769-775. [PMID: 33941915 DOI: 10.1038/s41565-021-00894-4] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2020] [Accepted: 03/10/2021] [Indexed: 05/12/2023]
Abstract
Magic-angle twisted bilayer graphene (MATBG) has recently emerged as a highly tunable two-dimensional material platform exhibiting a wide range of phases, such as metal, insulator and superconductor states. Local electrostatic control over these phases may enable the creation of versatile quantum devices that were previously not achievable in other single-material platforms. Here we engineer Josephson junctions and tunnelling transistors in MATBG, solely defined by electrostatic gates. Our multi-gated device geometry offers independent control of the weak link, barriers and tunnelling electrodes. These purely two-dimensional MATBG Josephson junctions exhibit non-local electrodynamics in a magnetic field, in agreement with the Pearl theory for ultrathin superconductors. Utilizing the intrinsic bandgaps of MATBG, we also demonstrate monolithic edge tunnelling spectroscopy within the same MATBG devices and measure the energy spectrum of MATBG in the superconducting phase. Furthermore, by inducing a double-barrier geometry, the devices can be operated as a single-electron transistor, exhibiting Coulomb blockade. With versatile functionality encompassed within a single material, these MATBG tunnelling devices may find applications in graphene-based tunable superconducting qubits, on-chip superconducting circuits and electromagnetic sensing.
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Affiliation(s)
- Daniel Rodan-Legrain
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Yuan Cao
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA.
| | - Jeong Min Park
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | | | - Mallika T Randeria
- Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kenji Watanabe
- National Institute for Materials Science, Tsukuba, Japan
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47
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Kanne T, Marnauza M, Olsteins D, Carrad DJ, Sestoft JE, de Bruijckere J, Zeng L, Johnson E, Olsson E, Grove-Rasmussen K, Nygård J. Epitaxial Pb on InAs nanowires for quantum devices. NATURE NANOTECHNOLOGY 2021; 16:776-781. [PMID: 33972757 DOI: 10.1038/s41565-021-00900-9] [Citation(s) in RCA: 20] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2020] [Accepted: 03/11/2021] [Indexed: 05/21/2023]
Abstract
Semiconductor-superconductor hybrids are widely used to realize complex quantum phenomena, such as topological superconductivity and spins coupled to Cooper pairs. Accessing new, exotic regimes at high magnetic fields and increasing operating temperatures beyond the state-of-the-art requires new, epitaxially matched semiconductor-superconductor materials. One challenge is the generation of favourable conditions for heterostructural formation between materials with the desired properties. Here we harness an increased knowledge of metal-on-semiconductor growth to develop InAs nanowires with epitaxially matched, single-crystal, atomically flat Pb films with no axial grain boundaries. These highly ordered heterostructures have a critical temperature of 7 K and a superconducting gap of 1.25 meV, which remains hard at 8.5 T, and therefore they offer a parameter space more than twice as large as those of alternative semiconductor-superconductor hybrids. Additionally, InAs/Pb island devices exhibit magnetic field-driven transitions from a Cooper pair to single-electron charging, a prerequisite for use in topological quantum computation. Semiconductor-Pb hybrids potentially enable access to entirely new regimes for a number of different quantum systems.
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Affiliation(s)
- Thomas Kanne
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark.
| | - Mikelis Marnauza
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Dags Olsteins
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Damon J Carrad
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Joachim E Sestoft
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Joeri de Bruijckere
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Lunjie Zeng
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
| | - Erik Johnson
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Eva Olsson
- Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
| | - Kasper Grove-Rasmussen
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark
| | - Jesper Nygård
- Center for Quantum Devices & Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen, Denmark.
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48
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Chirolli L, Moore JE. Enhanced Coherence in Superconducting Circuits via Band Engineering. PHYSICAL REVIEW LETTERS 2021; 126:187701. [PMID: 34018786 DOI: 10.1103/physrevlett.126.187701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2020] [Accepted: 04/06/2021] [Indexed: 06/12/2023]
Abstract
In superconducting circuits interrupted by Josephson junctions, the dependence of the energy spectrum on offset charges on different islands is 2e periodic through the Aharonov-Casher effect and resembles a crystal band structure that reflects the symmetries of the Josephson potential. We show that higher-harmonic Josephson elements described by a cos(2φ) energy-phase relation provide an increased freedom to tailor the shape of the Josephson potential and design spectra featuring multiplets of flat bands and Dirac points in the charge Brillouin zone. Flat bands provide noise-insensitive energy levels, and consequently, engineering band pairs with flat spectral gaps can help improve the coherence of the system. We discuss a modified version of a flux qubit that achieves, in principle, no decoherence from charge noise and introduce a flux qutrit that shows a spin-1 Dirac spectrum and is simultaneously quite robust to both charge and flux noise.
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Affiliation(s)
- Luca Chirolli
- Department of Physics, University of California, Berkeley, California 94720, USA
- Istituto Nanoscienze-CNR, I-56127 Pisa, Italy
| | - Joel E Moore
- Department of Physics, University of California, Berkeley, California 94720, USA
- Lawrence Berkeley National Laboratory, Materials Sciences Division, Berkeley, California 94720, USA
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49
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de Leon NP, Itoh KM, Kim D, Mehta KK, Northup TE, Paik H, Palmer BS, Samarth N, Sangtawesin S, Steuerman DW. Materials challenges and opportunities for quantum computing hardware. Science 2021; 372:372/6539/eabb2823. [PMID: 33859004 DOI: 10.1126/science.abb2823] [Citation(s) in RCA: 65] [Impact Index Per Article: 21.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Quantum computing hardware technologies have advanced during the past two decades, with the goal of building systems that can solve problems that are intractable on classical computers. The ability to realize large-scale systems depends on major advances in materials science, materials engineering, and new fabrication techniques. We identify key materials challenges that currently limit progress in five quantum computing hardware platforms, propose how to tackle these problems, and discuss some new areas for exploration. Addressing these materials challenges will require scientists and engineers to work together to create new, interdisciplinary approaches beyond the current boundaries of the quantum computing field.
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Affiliation(s)
- Nathalie P de Leon
- Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
| | - Kohei M Itoh
- School of Fundamental Science and Technology, Keio University, Yokohama 223-8522, Japan
| | - Dohun Kim
- Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Karan K Mehta
- Department of Physics, Institute for Quantum Electronics, ETH Zürich, 8092 Zürich, Switzerland
| | - Tracy E Northup
- Institut für Experimentalphysik, Universität Innsbruck, 6020 Innsbruck, Austria
| | - Hanhee Paik
- IBM Quantum, IBM T. J. Watson Research Center, Yorktown Heights, NY 10598, USA.
| | - B S Palmer
- Laboratory for Physical Sciences, University of Maryland, College Park, MD 20740, USA.,Quantum Materials Center, University of Maryland, College Park, MD 20742, USA
| | - N Samarth
- Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Sorawis Sangtawesin
- School of Physics and Center of Excellence in Advanced Functional Materials, Suranaree University of Technology, Nakhon Ratchasima 30000, Thailand
| | - D W Steuerman
- Kavli Foundation, 5715 Mesmer Avenue, Los Angeles, CA 90230, USA
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50
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Wind L, Sistani M, Song Z, Maeder X, Pohl D, Michler J, Rellinghaus B, Weber WM, Lugstein A. Monolithic Metal-Semiconductor-Metal Heterostructures Enabling Next-Generation Germanium Nanodevices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:12393-12399. [PMID: 33683092 PMCID: PMC7975277 DOI: 10.1021/acsami.1c00502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/09/2021] [Accepted: 02/23/2021] [Indexed: 06/12/2023]
Abstract
Low-dimensional Ge is perceived as a promising building block for emerging optoelectronic devices. Here, we present a wafer-scale platform technology enabling monolithic Al-Ge-Al nanostructures fabricated by a thermally induced Al-Ge exchange reaction. Transmission electron microscopy confirmed the purity and crystallinity of the formed Al segments with an abrupt interface to the remaining Ge segment. In good agreement with the theoretical value of bulk Al-Ge Schottky junctions, a barrier height of 200 ± 20 meV was determined. Photoluminescence and μ-Raman measurements proved the optical quality of the Ge channel embedded in the monolithic Al-Ge-Al heterostructure. Together with the wafer-scale accessibility, the proposed fabrication scheme may give rise to the development of key components of a broad spectrum of emerging Ge-based devices requiring monolithic metal-semiconductor-metal heterostructures with high-quality interfaces.
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Affiliation(s)
- Lukas Wind
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, Vienna 1040, Austria
| | - Masiar Sistani
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, Vienna 1040, Austria
| | - Zehao Song
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, Vienna 1040, Austria
| | - Xavier Maeder
- Swiss
Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkerstrasse 39, Thun 3602, Switzerland
| | - Darius Pohl
- Dresden
Center for Nanoanalysis, Technische Universität
Dresden, Helmholtzstraße
18, Dresden 01069, Germany
| | - Johann Michler
- Swiss
Federal Laboratories for Materials Science and Technology, Laboratory for Mechanics of Materials and Nanostructures, Feuerwerkerstrasse 39, Thun 3602, Switzerland
| | - Bernd Rellinghaus
- Dresden
Center for Nanoanalysis, Technische Universität
Dresden, Helmholtzstraße
18, Dresden 01069, Germany
| | - Walter M. Weber
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, Vienna 1040, Austria
| | - Alois Lugstein
- Institute
of Solid State Electronics, Technische Universität
Wien, Gußhausstraße 25-25a, Vienna 1040, Austria
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