1
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Yang MH, Wang CH, Lai YH, Wang CH, Chen YJ, Chen JY, Chu YH, Wu WW. Antiferroelectric Heterostructures Memristors with Unique Resistive Switching Mechanisms and Properties. NANO LETTERS 2024. [PMID: 39158148 DOI: 10.1021/acs.nanolett.4c02705] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/20/2024]
Abstract
A novel antiferroelectric material, PbSnO3 (PSO), was introduced into a resistive random access memory (RRAM) to reveal its resistive switching (RS) properties. It exhibits outstanding electrical performance with a large memory window (>104), narrow switching voltage distribution (±2 V), and low power consumption. Using high-resolution transmission electron microscopy, we observed the antiferroelectric properties and remanent polarization of the PSO thin films. The in-plane shear strains in the monoclinic PSO layer are attributed to oxygen octahedral tilts, resulting in misfit dislocations and grain boundaries at the PSO/SRO interface. Furthermore, the incoherent grain boundaries between the orthorhombic and monoclinic phases are assumed to be the primary paths of Ag+ filaments. Therefore, the RS behavior is primarily dominated by antiferroelectric polarization and defect mechanisms for the PSO structures. The RS behavior of antiferroelectric heterostructures controlled by switching spontaneous polarization and strain, defects, and surface chemistry reactions can facilitate the development of new antiferroelectric device systems.
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Affiliation(s)
- Meng-Hsuan Yang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Che-Hung Wang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Yu-Hong Lai
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Chien-Hua Wang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Yen-Jung Chen
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
| | - Jui-Yuan Chen
- Department of Materials Science and Engineering, National United University, No.1, Lienda, Miaoli City 360301, Taiwan
| | - Ying-Hao Chu
- Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Sec. 2, Guangfu Rd., East District, Hsinchu City 300044, Taiwan
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
- Future Semiconductor Technology Research Center, National Yang Ming Chiao Tung University, No. 1001, University Road, East District, Hsinchu City 30010, Taiwan
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2
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Zhang Z, Li X, Cheng Y, Li B, Wu J, Zhang L, Yin Z, Zhang X. Epitaxy of Monoclinic VO 2 on Large-Misfit 3 m Template Enabled by a Metastable Interfacial Layer. ACS OMEGA 2024; 9:30919-30925. [PMID: 39035957 PMCID: PMC11256101 DOI: 10.1021/acsomega.4c03810] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/21/2024] [Revised: 06/13/2024] [Accepted: 06/18/2024] [Indexed: 07/23/2024]
Abstract
We report the epitaxial growth of a monoclinic VO2 thin film on the CoFe2O4(111) template, assisted by an interfacial layer of the metastable orthorhombic phase. The interface between orthorhombic VO2 and CoFe2O4 is atomically sharp without noticeable interfacial diffusion. The (010)-faceted orthorhombic VO2 layer is lattice-matched to both the CoFe2O4(111) template and the monoclinic phase, although they have different surface symmetries. The occurrence of an orthorhombic VO2 thin layer significantly lowers the in-plane misfit strains of the monoclinic VO2 epilayer, along both the [100] and [001] axes. Our first-principles calculations confirm that the low-misfit orthorhombic VO2 is preferred on CoFe2O4(111) over the large-misfit monoclinic phase, at the initial growth stage. Additionally, upon increasing the film thickness to ∼8 nm, the orthorhombic phase is no longer favored, and the bulk stable monoclinic VO2 appears to minimize the free energy of the system. Moreover, we show that the metal-to-insulator transition of our VO2 epilayer can be efficiently triggered by both the temperature and Joule self-heating effect.
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Affiliation(s)
- Zhiwei Zhang
- School
of Electronic and Information Engineering, Wuyi University, Jiangmen 529020, Guangdong, China
- Key
Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Xingxing Li
- School
of Electronic and Information Engineering, Wuyi University, Jiangmen 529020, Guangdong, China
| | - Yong Cheng
- Key
Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center
of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bo Li
- Key
Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center
of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jinliang Wu
- Key
Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Ling Zhang
- Key
Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Zhigang Yin
- Key
Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center
of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xingwang Zhang
- Key
Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- Center
of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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3
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Ko D, Kim S, Yoon Y, Ma K, Seo I, Kim DH. Transfer of High-Temperature-Sputtered BiFeO 3 Thin Films onto Flexible Substrates Using α-MoO 3 Layers. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402856. [PMID: 39004889 DOI: 10.1002/smll.202402856] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2024] [Revised: 06/09/2024] [Indexed: 07/16/2024]
Abstract
Inducing external strains on highly oriented thin films transferred onto mechanically deformable substrates enables a drastic enhancement of their ferroelectric, magnetic, and electronic performances, which cannot be achieved in films on rigid single crystals. Herein, the growth and diffusion behaviors of BiFeO3 thin films grown at various temperatures is reported on α-MoO3 layers of different thicknesses using sputtering. When the BiFeO3 thin films are deposited at a high temperature, significant diffusion of Fe into α-MoO3 occurs, producing the Fe1.89Mo4.11O7 phase and suppressing the maintenance of the 2D structure of the α-MoO3 layers. Although lowering the deposition temperature alleviates the diffusion yielding the survival of the α-MoO3 layer, enabling exfoliation, the BiFeO3 is amorphous and the formation of the Fe1.89Mo4.11O7 phase cannot be suppressed at the crystallization temperature. High-temperature-grown BiFeO3 thin films are successfully transferred onto flexible substrates via mechanical exfoliation by introducing a blocking layer of Au and measured the ferroelectric properties of the transferred films.
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Affiliation(s)
- Dohyun Ko
- Department of Materials Science and Engineering, Myongji University, Yongin, 17058, Republic of Korea
| | - Sanghun Kim
- Department of Materials Science and Engineering, Myongji University, Yongin, 17058, Republic of Korea
| | - Yeomin Yoon
- Department of Materials Science and Engineering, Myongji University, Yongin, 17058, Republic of Korea
| | - Kihyun Ma
- Department of Materials Science and Engineering, Myongji University, Yongin, 17058, Republic of Korea
| | - Intae Seo
- Electronic Convergence Materials and Devices Research Center, Korea Electronics Technology Institute (KETI), Seongnam, 13509, Republic of Korea
| | - Dong Hun Kim
- Department of Materials Science and Engineering, Myongji University, Yongin, 17058, Republic of Korea
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4
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Bae IT, Foran B, Paik H. Four dimensional-scanning transmission electron microscopy study on relationship between crystallographic orientation and spontaneous polarization in epitaxial BiFeO 3. Sci Rep 2024; 14:15513. [PMID: 38969691 PMCID: PMC11226628 DOI: 10.1038/s41598-024-66382-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/07/2024] [Accepted: 07/01/2024] [Indexed: 07/07/2024] Open
Abstract
Spontaneous polarization and crystallographic orientations within ferroelectric domains are investigated using an epitaxially grown BiFeO3 thin film under bi-axial tensile strain. Four dimensional-scanning transmission electron microscopy (4D-STEM) and atomic resolution STEM techniques revealed that the tensile strain applied is not enough to cause breakdown of equilibrium BiFeO3 symmetry (rhombohedral with space group: R3c). 4D-STEM data exhibit two types of BiFeO3 ferroelectric domains: one with projected polarization vector possessing out-of-plane component only, and the other with that consisting of both in-plane and out-of-plane components. For domains with only out-of-plane polarization, convergent beam electron diffraction (CBED) patterns exhibit "extra" Bragg's reflections (compared to CBED of cubic-perovskite) that indicate rhombohedral symmetry. In addition, beam damage effects on ferroelectric property measurements were investigated by systematically changing electron energy from 60 to 300 keV.
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Affiliation(s)
- In-Tae Bae
- Microeletronics Technology Department, The Aerospace Corporation, El Segundo, CA, 90245, USA.
| | - Brendan Foran
- Microeletronics Technology Department, The Aerospace Corporation, El Segundo, CA, 90245, USA
| | - Hanjong Paik
- School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK, 73019, USA
- Center for Quantum Research and Technology, University of Oklahoma, Norman, OK, 73019, USA
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5
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Zhao Y, Ying T, Zhao L, Wu J, Pei C, Chen J, Deng J, Zhang Q, Gu L, Wang Q, Cao W, Li C, Zhu S, Zhang M, Yu N, Zhang L, Chen Y, Chen CZ, Yu T, Qi Y. Disorder-Broadened Phase Boundary with Enhanced Amorphous Superconductivity in Pressurized In 2Te 5. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401118. [PMID: 38641859 DOI: 10.1002/adma.202401118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2024] [Revised: 03/20/2024] [Indexed: 04/21/2024]
Abstract
As an empirical tool in materials science and engineering, the iconic phase diagram owes its robustness and practicality to the topological characteristics rooted in the celebrated Gibbs phase law free variables (F) = components (C) - phases (P) + 2. When crossing the phase diagram boundary, the structure transition occurs abruptly, bringing about an instantaneous change in physical properties and limited controllability on the boundaries (F = 1). Here, the sharp phase boundary is expanded to an amorphous transition region (F = 2) by partially disrupting the long-range translational symmetry, leading to a sequential crystalline-amorphous-crystalline (CAC) transition in a pressurized In2Te5 single crystal. Through detailed in situ synchrotron diffraction, it is elucidated that the phase transition stems from the rotation of immobile blocks [In2Te2]2+, linked by hinge-like [Te3]2- trimers. Remarkably, within the amorphous region, the amorphous phase demonstrates a notable 25% increase of the superconducting transition temperature (Tc), while the carrier concentration remains relatively constant. Furthermore, a theoretical framework is proposed revealing that the unconventional boost in amorphous superconductivity might be attributed to an intensified electron correlation, triggered by a disorder-augmented multifractal behavior. These findings underscore the potential of disorder and prompt further exploration of unforeseen phenomena on the phase boundaries.
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Affiliation(s)
- Yi Zhao
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Tianping Ying
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lingxiao Zhao
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Juefei Wu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Cuiying Pei
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Jing Chen
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jun Deng
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Qinghua Zhang
- Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Qi Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, China
| | - Weizheng Cao
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Changhua Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Shihao Zhu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Mingxin Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Na Yu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Lili Zhang
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201203, China
| | - Yulin Chen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, China
- Department of Physics, Clarendon Laboratory, University of Oxford, Parks Road, Oxford, OX1 3PU, UK
| | - Chui-Zhen Chen
- Institute for Advanced Study and School of Physical Science and Technology, Soochow University, Suzhou, 215006, China
| | - Tongxu Yu
- Suzhou Laboratory, Suzhou, Jiangsu, 215123, China
| | - Yanpeng Qi
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, China
- Shanghai Key Laboratory of High-resolution Electron Microscopy, ShanghaiTech University, Shanghai, 201210, China
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6
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Ghasemian MB, Zavabeti A, Allioux FM, Sharma P, Mousavi M, Rahim MA, Khayyam Nekouei R, Tang J, Christofferson AJ, Meftahi N, Rafiezadeh S, Cheong S, Koshy P, Tilley RD, McConville CF, Russo SP, Ton-That C, Seidel J, Kalantar-Zadeh K. Liquid Metal Doping Induced Asymmetry in Two-Dimensional Metal Oxides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309924. [PMID: 38263808 DOI: 10.1002/smll.202309924] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 01/09/2024] [Indexed: 01/25/2024]
Abstract
The emergence of ferroelectricity in two-dimensional (2D) metal oxides is a topic of significant technological interest; however, many 2D metal oxides lack intrinsic ferroelectric properties. Therefore, introducing asymmetry provides access to a broader range of 2D materials within the ferroelectric family. Here, the generation of asymmetry in 2D SnO by doping the material with Hf0.5Zr0.5O2 (HZO) is demonstrated. A liquid metal process as a doping strategy for the preparation of 2D HZO-doped SnO with robust ferroelectric characteristics is implemented. This technology takes advantage of the selective interface enrichment of molten Sn with HZO crystallites. Molecular dynamics simulations indicate a strong tendency of Hf and Zr atoms to migrate toward the surface of liquid metal and embed themselves within the growing oxide layer in the form of HZO. Thus, the liquid metal-based harvesting/doping technique is a feasible approach devised for producing novel 2D metal oxides with induced ferroelectric properties, represents a significant development for the prospects of random-access memories.
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Affiliation(s)
- Mohammad B Ghasemian
- School of Chemical and Biomolecular Engineering, University of Sydney, Sydney, NSW, 2006, Australia
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Ali Zavabeti
- Department of Chemical Engineering, The University of Melbourne, Parkville, VIC, 3010, Australia
- School of Science, RMIT University, Melbourne, VIC, 3000, Australia
| | - Francois-Marie Allioux
- School of Chemical and Biomolecular Engineering, University of Sydney, Sydney, NSW, 2006, Australia
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Pankaj Sharma
- ARC Center of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
- College of Science and Engineering, Flinders University, Bedford Park, Adelaide, SA, 5042, Australia
- Flinders Institute for Nanoscale Science and Technology, Flinders University, Adelaide, SA, 5042, Australia
| | - Maedehsadat Mousavi
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Md Arifur Rahim
- School of Chemical and Biomolecular Engineering, University of Sydney, Sydney, NSW, 2006, Australia
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Rasoul Khayyam Nekouei
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Jianbo Tang
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Andrew J Christofferson
- School of Science, RMIT University, Melbourne, VIC, 3000, Australia
- ARC Center of Excellence in Exciton Science, School of Science, RMIT University, Melbourne, Victoria, 3000, Australia
| | - Nastaran Meftahi
- ARC Center of Excellence in Exciton Science, School of Science, RMIT University, Melbourne, Victoria, 3000, Australia
| | - Somayeh Rafiezadeh
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Soshan Cheong
- Mark Wainwright Analytical Centre, Electron Microscope Unit, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Pramod Koshy
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Richard D Tilley
- Mark Wainwright Analytical Centre, Electron Microscope Unit, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
- School of Chemistry and Australian Centre for NanoMedicine, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Chris F McConville
- School of Science, RMIT University, Melbourne, VIC, 3000, Australia
- Institute for Frontier Materials, Deakin University, Geelong, Victoria, 3216, Australia
| | - Salvy P Russo
- ARC Center of Excellence in Exciton Science, School of Science, RMIT University, Melbourne, Victoria, 3000, Australia
| | - Cuong Ton-That
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Jan Seidel
- ARC Center of Excellence in Future Low-Energy Electronics Technologies (FLEET), University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
- School of Materials Science and Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
| | - Kourosh Kalantar-Zadeh
- School of Chemical and Biomolecular Engineering, University of Sydney, Sydney, NSW, 2006, Australia
- School of Chemical Engineering, University of New South Wales (UNSW), Sydney, NSW, 2052, Australia
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7
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He J, Liu Y, Qu J, Zhang J, Fan F, Li C. The Ferroelectric Effects of Rhombohedral and Tetragonal BiFeO 3 in Photoelectrochemical Water Splitting. J Phys Chem Lett 2024; 15:6031-6037. [PMID: 38819116 DOI: 10.1021/acs.jpclett.4c01245] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/01/2024]
Abstract
The phase of BiFeO3 (BFO) as well as its domain configuration can be tuned by strain engineering. Phase change may greatly influence the properties of the polarization field and hence charge separation. However, the photoelectrochemical properties of different BFO phases have rarely been addressed. Here, the photoelectrochemical study of tetragonal (T-) and rhombohedral (R-) phase BFO films was conducted under visible light illumination. The photocurrent density of R-BFO is 5 times that of T-BFO. A ferroelectric domain study shows that T-BFO features single domain structure in contrast to the polydomain structure of R-BFO. Higher charge separation efficiency is achieved in R-BFO, dominated by the domain walls as conducting pathways for efficient charge separation and transfer. This work provides a fundamental understanding of the photoelectrochemical properties of T- and R-BFO, offering valuable insights for the development of BFO-based materials for solar energy conversion.
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Affiliation(s)
- Jiandong He
- School of Materials Science and Engineering and National Institute for Advanced Materials, Nankai University, Tianjin 300350, People's Republic of China
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
| | - Yong Liu
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
| | - Jiangshan Qu
- Division of Energy Research Resources, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
| | - Jie Zhang
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Fengtao Fan
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
| | - Can Li
- State Key Laboratory of Catalysis, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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8
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Li T, Deng S, Liu H, Chen J. Insights into Strain Engineering: From Ferroelectrics to Related Functional Materials and Beyond. Chem Rev 2024; 124:7045-7105. [PMID: 38754042 DOI: 10.1021/acs.chemrev.3c00767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
Ferroelectrics have become indispensable components in various application fields, including information processing, energy harvesting, and electromechanical conversion, owing to their unique ability to exhibit electrically or mechanically switchable polarization. The distinct polar noncentrosymmetric lattices of ferroelectrics make them highly responsive to specific crystal structures. Even slight changes in the lattice can alter the polarization configuration and response to external fields. In this regard, strain engineering has emerged as a prevalent regulation approach that not only offers a versatile platform for structural and performance optimization within ferroelectrics but also unlocks boundless potential in various functional materials. In this review, we systematically summarize the breakthroughs in ferroelectric-based functional materials achieved through strain engineering and progress in method development. We cover research activities ranging from fundamental attributes to wide-ranging applications and novel functionalities ranging from electromechanical transformation in sensors and actuators to tunable dielectric materials and information technologies, such as transistors and nonvolatile memories. Building upon these achievements, we also explore the endeavors to uncover the unprecedented properties through strain engineering in related chemical functionalities, such as ferromagnetism, multiferroicity, and photoelectricity. Finally, through discussions on the prospects and challenges associated with strain engineering in the materials, this review aims to stimulate the development of new methods for strain regulation and performance boosting in functional materials, transcending the boundaries of ferroelectrics.
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Affiliation(s)
- Tianyu Li
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Hui Liu
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun Chen
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, China
- Hainan University, Haikou 570228, China
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9
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Zang P, Yu C, Zhang R, Yang D, Gai S, Yang P, Lin J. Revealing the Optimization Route of Piezoelectric Sonosensitizers: From Mechanism to Engineering Methods. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2401650. [PMID: 38712474 DOI: 10.1002/smll.202401650] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/02/2024] [Revised: 04/17/2024] [Indexed: 05/08/2024]
Abstract
Piezoelectric catalysis is a novel catalytic technology that has developed rapidly in recent years and has attracted extensive interest among researchers in the field of tumor therapy for its acoustic-sensitizing properties. Nevertheless, researchers are still controversial about the key technical difficulties in the modulation of piezoelectric sonosensitizers for tumor therapy applications, which is undoubtedly a major obstacle to the performance modulation of piezoelectric sonosensitizers. Clarification of this challenge will be beneficial to the design and optimization of piezoelectric sonosensitizers in the future. Here, the authors start from the mechanism of piezoelectric catalysis and elaborate the mechanism and methods of defect engineering and phase engineering for the performance modulation of piezoelectric sonosensitizers based on the energy band theory. The combined therapeutic strategy of piezoelectric sonosensitizers with enzyme catalysis and immunotherapy is introduced. Finally, the challenges and prospects of piezoelectric sonosensitizers are highlighted. Hopefully, the explorations can guide researchers toward the optimization of piezoelectric sonosensitizers and can be applied in their own research.
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Affiliation(s)
- Pengyu Zang
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Chenghao Yu
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Rui Zhang
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Dan Yang
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Shili Gai
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Piaoping Yang
- Key Laboratory of Superlight Materials and Surface Technology, Ministry of Education, College of Material Sciences and Chemical Engineering, Harbin Engineering University, Harbin, 150001, P. R. China
| | - Jun Lin
- State Key Laboratory of Rare Earth Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
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10
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Chen X, Shen ZH, Liu RL, Shen Y, Liu HX, Chen LQ, Nan CW. Programming Polarity Heterogeneity of Energy Storage Dielectrics by Bidirectional Intelligent Design. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311721. [PMID: 38224342 DOI: 10.1002/adma.202311721] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2023] [Revised: 12/31/2023] [Indexed: 01/16/2024]
Abstract
Dielectric capacitors, characterized by ultra-high power densities, are considered as fundamental energy storage components in electronic and electrical systems. However, synergistically improving energy densities and efficiencies remains a daunting challenge. Understanding the role of polarity heterogeneity at the nanoscale in determining polarization response is crucial to the domain engineering of high-performance dielectrics. Here, a bidirectional design with phase-field simulation and machine learning is performed to forward reveal the structure-property relationship and reversely optimize polarity heterogeneity to improve energy storage performance. Taking BiFeO3-based dielectrics as typical systems, this work establishes the mapping diagrams of energy density and efficiency dependence on the volume fraction, size and configuration of polar regions. Assisted by CatBoost and Wolf Pack algorithms, this work analyzes the contributions of geometric factors and intrinsic features and find that nanopillar-like polar regions show great potential in achieving both high polarization intensity and fast dipole switching. Finally, a maximal energy density of 188 J cm-3 with efficiency above 95% at 8 MV cm-1 is obtained in BiFeO3-Al2O3 systems. This work provides a general method to study the influence of local polar heterogeneity on polarization behaviors and proposes effective strategies to enhance energy storage performance by tuning polarity heterogeneity.
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Affiliation(s)
- Xiaoxiao Chen
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, China
| | - Zhong-Hui Shen
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, China
| | - Run-Lin Liu
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, China
| | - Yang Shen
- School of Materials Science and Engineering, State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing, 100084, China
| | - Han-Xing Liu
- International School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, China
| | - Long-Qing Chen
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA
| | - Ce-Wen Nan
- School of Materials Science and Engineering, State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing, 100084, China
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11
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Yu Z, Fan N, Fu Z, He B, Yan S, Cai H, Chen X, Zhang L, Zhang Y, Xu B, Wang G, Xu F. Room-temperature stabilizing strongly competing ferrielectric and antiferroelectric phases in PbZrO 3 by strain-mediated phase separation. Nat Commun 2024; 15:3438. [PMID: 38653960 DOI: 10.1038/s41467-024-47776-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/08/2023] [Accepted: 04/12/2024] [Indexed: 04/25/2024] Open
Abstract
PbZrO3 has been broadly considered as a prototypical antiferroelectric material for high-power energy storage. A recent theoretical study suggests that the ground state of PbZrO3 is threefold-modulated ferrielectric, which challenges the generally accepted antiferroelectric configuration. However, such a novel ferrielectric phase was predicted only to be accessible at low temperatures. Here, we successfully achieve the room-temperature construction of the strongly competing ferrielectric and antiferroelectric state by strain-mediated phase separation in PbZrO3/SrTiO3 thin film. We demonstrate that the phase separation occurs spontaneously in quasi-periodic stripe-like patterns under a compressive misfit strain and can be tailored by varying the film thickness. The ferrielectric phase strikingly exhibitsa threefold modulation period with a nearly up-up-down configuration, which could be stabilized and manipulated by the formation and evolution of interfacial defects under applied strain. The present results construct a fertile ground for further exploring the physical properties and applications based on the novel ferrielectric phase.
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Affiliation(s)
- Ziyi Yu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Ningbo Fan
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou, 215006, China
| | - Zhengqian Fu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China.
| | - Biao He
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Shiguang Yan
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Henghui Cai
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Xuefeng Chen
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Linlin Zhang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Yuanyuan Zhang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Science, East China Normal University, Shanghai, 200241, China
| | - Bin Xu
- Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou, 215006, China
| | - Genshui Wang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China.
| | - Fangfang Xu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructures & The Key Lab of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China.
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
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12
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Song B, Park HS, Suh J, Seo J, Kim J, Yang CH. Three-Dimensional Visualization of Oxygen-Vacancy Migration and Redistribution in Ca-Substituted BiFeO 3. ACS NANO 2024; 18:1948-1957. [PMID: 38207107 DOI: 10.1021/acsnano.3c06675] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/13/2024]
Abstract
Ionic movement has received renewed attention in recent years, particularly in the field of ferroelectric oxides, since it is intrinsically linked to chemical reaction kinetics and ferroelectric phase stability. The associated surface electrochemical processes coupled local ionic transport with an applied electric bias, exhibiting very high ionic mobility at room temperature based on a simple electrostatics scenario. However, few studies have focused on the applied-polarity dependence of ionic migration with directly visualized maps. Here, we use incorporated experiments of conductive scanning probe microscopy and time-of-flight secondary ion mass spectrometry to investigate oxygen ionic migration and cation redistribution in ionic oxides. The local concentrations of oxygen vacancies and other cation species are visualized by three-dimensional mappings, indicating that oxygen vacancies tend to be ejected toward the surface. An accumulation of oxygen vacancies and ionic redistribution strongly depend on tip polarity, thus corroborating their role in the electrochemical process. This work illustrates the interplay between ionic kinetics and electric switching.
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Affiliation(s)
- Bingqian Song
- Department of Physics, KAIST, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Daejeon 34141, Republic of Korea
| | - Heung-Sik Park
- Department of Physics, KAIST, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Daejeon 34141, Republic of Korea
| | - Jeonghun Suh
- Department of Physics, KAIST, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Daejeon 34141, Republic of Korea
| | - Jeongdae Seo
- Department of Physics, KAIST, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Daejeon 34141, Republic of Korea
| | - Jihun Kim
- Department of Physics, KAIST, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Daejeon 34141, Republic of Korea
| | - Chan-Ho Yang
- Department of Physics, KAIST, Daejeon 34141, Republic of Korea
- Center for Lattice Defectronics, KAIST, Daejeon 34141, Republic of Korea
- KAIST Institute for the NanoCentury, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
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13
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Ren J, Tang S, Guo C, Wang J, Huang H. Surface Effect of Thickness-Dependent Polarization and Domain Evolution in BiFeO 3 Epitaxial Ultrathin Films. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1074-1081. [PMID: 38149600 DOI: 10.1021/acsami.3c14561] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
With the trend of device miniaturization, ultrathin ferroelectric films are gaining more and more attention. However, understanding ferroelectricity in this nanoscale context remains a formidable challenge, primarily due to the heightened relevance of surface effects, which often leads to the loss of net polarization. Here, the influence of surface effects on the polarization as a function of thickness in ultrathin BiFeO3 films is investigated using phase-field simulations. The findings reveal a notable increase in ferroelectric polarization with increasing thickness, with a particularly discernible change occurring below the 10 nm threshold. Upon accounting for surface effects, the polarization is marginally lower than the case without such considerations, with the disparity becoming more pronounced at smaller thicknesses. Moreover, the hysteresis loop and butterfly loop of the ultrathin film were simulated, demonstrating that the ferroelectric properties of films remain robust even down to a thickness of 5 nm. Our investigations provide valuable insights into the significance of ferroelectric thin films in device miniaturization.
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Affiliation(s)
- Jing Ren
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Shiyu Tang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Changqing Guo
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Jing Wang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Houbing Huang
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
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14
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Waqar M, Chai J, Wong LM, Lim PC, Chen S, Liew WH, Wang S, Chen J, He Q, Yao K, Wang J. Large Electromechanical Response in a Polycrystalline Alkali-Deficient (K,Na)NbO 3 Thin Film on Silicon. NANO LETTERS 2023. [PMID: 38010147 DOI: 10.1021/acs.nanolett.3c03302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Abstract
The demand for large electromechanical performance in lead-free polycrystalline piezoelectric thin films is driven by the need for compact, high-performance microelectromechanical systems (MEMS) based devices operating at low voltages. Here we significantly enhance the electromechanical response in a polycrystalline lead-free oxide thin film by utilizing lattice-defect-induced structural inhomogeneities. Unlike prior observations in mismatched epitaxial films with limited low-frequency enhancements, we achieve large electromechanical strain in a polycrystalline (K,Na)NbO3 film integrated on silicon. This is achieved by inducing self-assembled Nb-rich planar faults with a nonstoichiometric composition. The film exhibits an effective piezoelectric coefficient of 565 pm V-1 at 1 kHz, surpassing those of lead-based counterparts. Notably, lattice defect growth is substrate-independent, and the large electromechanical response is extended to even higher frequencies in a polycrystalline film. Improved properties arise from unique lattice defect morphology and frequency-dependent relaxation behavior, offering a new route to remarkable electromechanical response in polycrystalline thin films.
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Affiliation(s)
- Moaz Waqar
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore 138634, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117574, Singapore
| | - Jianwei Chai
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore 138634, Singapore
| | - Lai Mun Wong
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore 138634, Singapore
| | - Poh Chong Lim
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore 138634, Singapore
| | - Shuting Chen
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore 138634, Singapore
| | - Weng Heng Liew
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore 138634, Singapore
| | - Shijie Wang
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore 138634, Singapore
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117574, Singapore
| | - Qian He
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117574, Singapore
| | - Kui Yao
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore 138634, Singapore
| | - John Wang
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore 138634, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117574, Singapore
- National University of Singapore (Chongqing) Research Institute, Chongqing 401123, People's Republic of China
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15
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Bae IT, Lingley ZR, Foran BJ, Adams PM, Paik H. Large bi-axial tensile strain effect in epitaxial BiFeO 3 film grown on single crystal PrScO 3. Sci Rep 2023; 13:19018. [PMID: 37923812 PMCID: PMC10624869 DOI: 10.1038/s41598-023-45980-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/19/2023] [Accepted: 10/26/2023] [Indexed: 11/06/2023] Open
Abstract
A BiFeO3 film is grown epitaxially on a PrScO3 single crystal substrate which imparts ~ 1.45% of biaxial tensile strain to BiFeO3 resulting from lattice misfit. The biaxial tensile strain effect on BiFeO3 is investigated in terms of crystal structure, Poisson ratio, and ferroelectric domain structure. Lattice resolution scanning transmission electron microscopy, precession electron diffraction, and X-ray diffraction results clearly show that in-plane interplanar distance of BiFeO3 is the same as that of PrScO3 with no sign of misfit dislocations, indicating that the biaxial tensile strain caused by lattice mismatch between BiFeO3 and PrScO3 are stored as elastic energy within BiFeO3 film. Nano-beam electron diffraction patterns compared with structure factor calculation found that the BiFeO3 maintains rhombohedral symmetry, i.e., space group of R3c. The pattern analysis also revealed two crystallographically distinguishable domains. Their relations with ferroelectric domain structures in terms of size and spontaneous polarization orientations within the domains are further understood using four-dimensional scanning transmission electron microscopy technique.
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Affiliation(s)
- In-Tae Bae
- Microeletronics Technology Department, The Aerospace Corporation, El Segundo, CA, 90009, USA.
| | - Zachary R Lingley
- Microeletronics Technology Department, The Aerospace Corporation, El Segundo, CA, 90009, USA
| | - Brendan J Foran
- Microeletronics Technology Department, The Aerospace Corporation, El Segundo, CA, 90009, USA
| | - Paul M Adams
- Materials Processing Department, The Aerospace Corporation, El Segundo, CA, 90009, USA
| | - Hanjong Paik
- School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK, 73019, USA
- Center for Quantum Research and Technology, University of Oklahoma, Norman, OK, 73019, USA
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16
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Xi G, Pan Z, Fang YW, Tu J, Li H, Yang Q, Liu C, Luo H, Ding J, Xu S, Deng S, Wang Q, Zheng D, Long Y, Jin K, Zhang X, Tian J, Zhang L. Anion-induced robust ferroelectricity in sulfurized pseudo-rhombohedral epitaxial BiFeO 3 thin films via polarization rotation. MATERIALS HORIZONS 2023; 10:4389-4397. [PMID: 37465904 DOI: 10.1039/d3mh00716b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/20/2023]
Abstract
Polarization rotation caused by various strains, such as substrate and/or chemical strain, is essential to control the electronic structure and properties of ferroelectric materials. This study proposes anion-induced polarization rotation with chemical strain, which effectively improves ferroelectricity. A method for the sulfurization of BiFeO3 thin films by introducing sulfur anions is presented. The sulfurized films exhibited substantial enhancement in room-temperature ferroelectric polarization through polarization rotation and distortion, with a 170% increase in the remnant polarization from 58 to 100.7 μC cm-2. According to first-principles calculations and the results of X-ray absorption spectroscopy and high-angle annular dark-field scanning transmission electron microscopy, this enhancement arose from the introduction of S atoms driving the re-distribution of the lone-pair electrons of Bi, resulting in the rotation of the polarization state from the [001] direction to the [110] or [111] one. The presented method of anion-driven polarization rotation might enable the improvement of the properties of oxide materials.
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Affiliation(s)
- Guoqiang Xi
- Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China.
| | - Zhao Pan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
| | - Yue-Wen Fang
- Centro de Física de Materiales (CSIC-UPV/EHU), Manuel de Lardizabal pasealekua 5, 20018 Donostia/San Sebastián, Spain.
- Fisika Aplikatua Saila, Gipuzkoako Ingeniaritza Eskola, University of the Basque Country (UPV/EHU), Europa Plaza 1, 20018 Donostia/San Sebastián, Spain
| | - Jie Tu
- Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China.
| | - Hangren Li
- Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China.
| | - Qianqian Yang
- Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China.
| | - Chen Liu
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Huajie Luo
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Jiaqi Ding
- Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Shuai Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
| | - Shiqing Deng
- Beijing Advanced Innovation Center for Materials Genome Engineering, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Qingxiao Wang
- Corelab, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Dongxing Zheng
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Youwen Long
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Jianjun Tian
- Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China.
| | - Linxing Zhang
- Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China.
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17
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Bae IT, Lingley Z, Foran B, Adams P, Paik H. TEM Study on Epitaxial BiFeO3 Film under Biaxial Tensile Strain. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2023; 29:1684-1685. [PMID: 37613795 DOI: 10.1093/micmic/ozad067.866] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Affiliation(s)
- In-Tae Bae
- The Aerospace Corporation, Los Angeles, CA, USA
| | | | | | - Paul Adams
- The Aerospace Corporation, Los Angeles, CA, USA
| | - Hanjong Paik
- School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK, USA
- Center for Quantum Research and Technology, University of Oklahoma, Norman, OK, USA
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18
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Gao F, Zhao X, Xun X, Huang H, Shi X, Li Q, Liu F, Gao P, Liao Q, Zhang Y. Morphotropic Phase Boundary in Polarized Organic Piezoelectric Materials. PHYSICAL REVIEW LETTERS 2023; 130:246801. [PMID: 37390419 DOI: 10.1103/physrevlett.130.246801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2022] [Accepted: 05/17/2023] [Indexed: 07/02/2023]
Abstract
Designing the morphotropic phase boundary (MPB) has been the most sought-after approach to achieve high piezoelectric performance of piezoelectric materials. However, MPB has not yet been found in the polarized organic piezoelectric materials. Here, we discover MPB with biphasic competition of β and 3/1-helical phases in the polarized piezoelectric polymer alloys (PVTC-PVT) and demonstrate a mechanism to induce MPB using the compositionally tailored intermolecular interaction. Consequently, PVTC-PVT exhibits a giant quasistatic piezoelectric coefficient of >32 pC/N while maintaining a low Young's modulus of 182 MPa, with a record-high figure of merit of piezoelectricity modulus of about 176 pC/(N·GPa) among all piezoelectric materials.
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Affiliation(s)
- Fangfang Gao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Xuan Zhao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Xiaochen Xun
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Houbing Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Xiaoming Shi
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Qi Li
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Fang Liu
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Peng Gao
- Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Qingliang Liao
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Key Laboratory for Advanced Energy Materials and Technologies, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
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19
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Xu T, Ichiki Y, Masuda K, Wang Y, Hirakata H, Shimada T. Ultrasmall Polar Skyrmions and Merons in SrTiO 3 Heterostructures by Polaron Engineering. ACS NANO 2023. [PMID: 37256728 DOI: 10.1021/acsnano.3c02481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Topological objects with skyrmionic textures in ferroelectrics, i.e., polar skyrmions, are promising technological paradigms in next-generation electronic devices. While breakthrough discoveries of stable polar skyrmions approximately ten nanometers in size have been very recently witnessed in complex systems, such a nontrivial topological order in ferroelectrics inevitably disappears below the ferroelectric critical size of several nanometers. Herein, we propose a strategy to overcome this limitation and achieve ultrasmall and isolated polar skyrmions by engineering excess-electron polarons in otherwise nonferroelectric SrTiO3 heterostructures. Our first-principle calculations demonstrate that a polaron localized at a SrTiO3 surface induces a Neel-type polar skyrmion as small as 1.8 nanometers attributed to the effect of atomic-scale surface roughness. Furthermore, we show that this polar topological structure is tunable by the choice of heterostructures and by the mechanical approach, which undergoes a phase transition to a meron state in the twisted boundary and to an antiskyrmion state in the surface with external shear strain, respectively. Such ultraminiaturization of skyrmions and their transitions unexpectedly unravels the formula of ultrasmall topological orders originating from the interplay between an electron polaron and structural symmetry breaking, which is completely different from the common mechanism of geometric confinement for larger-scale skyrmions. Our results not only provide a mechanism for the exploration of polar skyrmions and their rich topological transitions but also hold potential for ultrahigh-density memories.
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Affiliation(s)
- Tao Xu
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Yuuki Ichiki
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Kairi Masuda
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Yu Wang
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Hiroyuki Hirakata
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
| | - Takahiro Shimada
- Department of Mechanical Engineering and Science, Kyoto University, Nishikyo-ku, Kyoto 615-8540, Japan
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20
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Das A, Mrinalini M, Usami T, Pati SP, Taniyama T, Gorige V. Electric and Magnetic Tuning of Gilbert Damping Constant in LSMO/PMN-PT(011) Heterostructure. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:285801. [PMID: 37044113 DOI: 10.1088/1361-648x/accc66] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Electric field control of magnetodynamics in magnetoelectric (ME) heterostructures has
been the subject of recent interest due to its fundamental complexity and promising applications in
room temperature devices. The present work focuses on the tuning of magnetodynamic parameters
of epitaxially grown ferromagnetic (FM) La0.7Sr0.3MnO3(LSMO) on a ferro(piezo)electric (FE)
Pb(Mg0.33Nb0.67)O3-PbTiO3(PMN-PT) single crystal substrate. The uniaxial magnetic anisotropy
of LSMO on PMN-PT confirms the ME coupling at the FM/FE heterointerface. The magnitude of
the Gilbert damping constant (α) of this uniaxial LSMO film measured along the hard magnetic axis
is significantly small compared to the easy axis. Furthermore, a marked decrease in the α values of
LSMO at positive and negative electrical remanence of PMN-PT is observed, which is interpreted
in the framework of strain induced spin dependent electronic structure. The present results clearly
encourage the prospects of electric field controlled magnetodynamics, thereby realising the room
temperature spin-wave based device applications with ultra-low power consumption.
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Affiliation(s)
- Avisek Das
- School of Physics, University of Hyderabad, Gachibowli, Hyderabad 500046, India, Hyderabad, Telangana, 500046, INDIA
| | - Mrinalini Mrinalini
- School of Physics, University of Hyderabad, Gachibowli, Hyderabad 500046, India, Hyderabad, Telangana, 500046, INDIA
| | - Takamasa Usami
- Department of Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan, Nagoya, Aichi, 464-8601, JAPAN
| | - Satya Prakash Pati
- Department of Physics, Nagoya University, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602, Japan, Nagoya, 464-8601, JAPAN
| | - Tomoyasu Taniyama
- Department of Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8602, JAPAN
| | - Venkataiah Gorige
- School of Physics, University of Hyderabad, University of Hyderabad, Prof C R Rao Road, Gachibowli, Hyderabad, Telangana, 500046, INDIA
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21
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Han L, Yang X, Lun Y, Guan Y, Huang F, Wang S, Yang J, Gu C, Gu ZB, Liu L, Wang Y, Wang P, Hong J, Pan X, Nie Y. Tuning Piezoelectricity via Thermal Annealing at a Freestanding Ferroelectric Membrane. NANO LETTERS 2023; 23:2808-2815. [PMID: 36961344 DOI: 10.1021/acs.nanolett.3c00096] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Tuning the ferroelectric domain structure by a combination of elastic and electrostatic engineering provides an effective route for enhanced piezoelectricity. However, for epitaxial thin films, the clamping effect imposed by the substrate does not allow aftergrowth tuning and also limits the electromechanical response. In contrast, freestanding membranes, which are free of substrate constraints, enable the tuning of a subtle balance between elastic and electrostatic energies, giving new platforms for enhanced and tunable functionalities. Here, highly tunable piezoelectricity is demonstrated in freestanding PbTiO3 membranes, by varying the ferroelectric domain structures from c-dominated to c/a and a domains via aftergrowth thermal treatment. Significantly, the piezoelectric coefficient of the c/a domain structure is enhanced by a factor of 2.5 compared with typical c domain PbTiO3. This work presents a new strategy to manipulate the piezoelectricity in ferroelectric membranes, highlighting their great potential for nano actuators, transducers, sensors and other NEMS device applications.
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Affiliation(s)
- Lu Han
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Xinrui Yang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Yingzhuo Lun
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Yue Guan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Futao Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Shuhao Wang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, Jiangsu, People's Republic of China
| | - Jiangfeng Yang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Chenyi Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Zheng-Bin Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Lisha Liu
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, Jiangsu, People's Republic of China
| | - Yaojin Wang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, Jiangsu, People's Republic of China
| | - Peng Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
- Department of Physics, University of Warwick, Coventry CV4 7AL, U.K
| | - Jiawang Hong
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xiaoqing Pan
- Department of Physics and Astronomy, University of California, Irvine, California 92697, United States
- Department of Materials Science and Engineering, University of California, Irvine, California 92697, United States
- Irvine Materials Research Institute, University of California, Irvine, California 92697, United States
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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22
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Zhang R, Bai L, Xie X, Hu P, Wu Z, Dong H, Wen M, Wu F. Prediction of the hardest BiFeO 3 from first-principles calculations. Phys Chem Chem Phys 2023; 25:5049-5055. [PMID: 36722891 DOI: 10.1039/d2cp05817k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
Abstract
BiFeO3 is the only material with ferroelectric Curie temperature and Néel temperature higher than room temperature, making it one of the most well-studied multiferroic materials. Based on an ab initio evolutionary algorithm, we predicted a new cubic C-type antiferromagnetic structure (Fd3̄m-BiFeO3) at ambient pressure. It was found that Fd3̄m-BiFeO3 is the hardest BiFeO3 (Vickers hardness ∼ 9.12 GPa), about 78% harder than R3c-BiFeO3 (the well-known multiferroic material), which contributes to extending the life of BiFeO3 devices. In addition, Fd3̄m-BiFeO3 has the largest shear modulus (83.74 GPa) and the largest Young's modulus (214.72 GPa). Besides, we found an interesting phenomenon that among the common multiferroic materials (BiFeO3, BaTiO3, PbTiO3, SrRuO3, KNbO3, and BiMnO3), Pnma-BiMnO3 has the largest bulk modulus, and its bulk modulus is about 15% larger than that of Fd3̄m-BiFeO3. However, its Vickers hardness (4.47 GPa) is much smaller than that of Fd3̄m-BiFeO3. This is because the Vickers hardness is proportional to the shear modulus and the shear modulus of Fd3̄m-BiFeO3 is larger than that of Pnma-BiMnO3. This work provides a deeper and more comprehensive understanding of BiFeO3.
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Affiliation(s)
- Runqing Zhang
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, China.
| | - Lingling Bai
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, China.
| | - Xing Xie
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, China.
| | - Peiju Hu
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, China.
| | - Ziqiao Wu
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, China.
| | - Huafeng Dong
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, China. .,Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou, 510006, China
| | - Minru Wen
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou, 510006, China.
| | - Fugen Wu
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou, 510006, China.,School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
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23
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Chen S, Zhang Q, Rong D, Xu Y, Zhang J, Pei F, Bai H, Shang YX, Lin S, Jin Q, Hong H, Wang C, Yan W, Guo H, Zhu T, Gu L, Gong Y, Li Q, Wang L, Liu GQ, Jin KJ, Guo EJ. Braiding Lateral Morphotropic Grain Boundaries in Homogenetic Oxides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2206961. [PMID: 36281802 DOI: 10.1002/adma.202206961] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2022] [Revised: 10/14/2022] [Indexed: 06/16/2023]
Abstract
Interfaces formed by correlated oxides offer a critical avenue for discovering emergent phenomena and quantum states. However, the fabrication of oxide interfaces with variable crystallographic orientations and strain states integrated along a film plane is extremely challenging by conventional layer-by-layer stacking or self-assembling. Here, the creation of morphotropic grain boundaries (GBs) in laterally interconnected cobaltite homostructures is reported. Single-crystalline substrates and suspended ultrathin freestanding membranes provide independent templates for coherent epitaxy and constraint on the growth orientation, resulting in seamless and atomically sharp GBs. Electronic states and magnetic behavior in hybrid structures are laterally modulated and isolated by GBs, enabling artificially engineered functionalities in the planar matrix. This work offers a simple and scalable method for fabricating unprecedented innovative interfaces through controlled synthesis routes as well as providing a platform for exploring potential applications in neuromorphics, solid-state batteries, and catalysis.
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Affiliation(s)
- Shengru Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Dongke Rong
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yue Xu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jinfeng Zhang
- Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Fangfang Pei
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029, China
| | - He Bai
- Spallation Neutron Source Science Center, Dongguan, 523803, China
| | - Yan-Xing Shang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Shan Lin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Qiao Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haitao Hong
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Wensheng Yan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029, China
| | - Haizhong Guo
- Key Laboratory of Material Physics & School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China
| | - Tao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Spallation Neutron Source Science Center, Dongguan, 523803, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Lin Gu
- National Center for Electron Microscopy in Beijing and School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Yu Gong
- Department of Physics and Astronomy, College of Charleston, 58 Coming Street, Charleston, SC, 29424, USA
| | - Qian Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230029, China
| | - Lingfei Wang
- Hefei National Laboratory for Physical Science at the Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Gang-Qin Liu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Physics & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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24
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Misiurev D, Kaspar P, Holcman V. Brief Theoretical Overview of Bi-Fe-O Based Thin Films. MATERIALS (BASEL, SWITZERLAND) 2022; 15:ma15248719. [PMID: 36556529 PMCID: PMC9784397 DOI: 10.3390/ma15248719] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Revised: 11/16/2022] [Accepted: 12/05/2022] [Indexed: 05/14/2023]
Abstract
This paper will provide a brief overview of the unique multiferroic material Bismuth ferrite (BFO). Considering that Bismuth ferrite is a unique material which possesses both ferroelectric and magnetic properties at room temperature, the uniqueness of Bismuth ferrite material will be discussed. Fundamental properties of the material including electrical and ferromagnetic properties also will be mentioned in this paper. Electrical properties include characterization of basic parameters considering the electrical resistivity and leakage current. Ferromagnetic properties involve the description of magnetic hysteresis characterization. Bismuth ferrite can be fabricated in a different form. The common forms will be mentioned and include powder, thin films and nanostructures. The most popular method of producing thin films based on BFO materials will be described and compared. Finally, the perspectives and potential applications of the material will be highlighted.
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25
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Sharma Y, Paudel B, Huon A, Schneider MM, Roy P, Corey Z, Schönemann R, Jones AC, Jaime M, Yarotski DA, Charlton T, Fitzsimmons MR, Jia Q, Pettes MT, Yang P, Chen A. Induced Ferromagnetism in Epitaxial Uranium Dioxide Thin Films. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203473. [PMID: 36209382 PMCID: PMC9685444 DOI: 10.1002/advs.202203473] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 06/14/2022] [Revised: 08/08/2022] [Indexed: 06/16/2023]
Abstract
Actinide materials have various applications that range from nuclear energy to quantum computing. Most current efforts have focused on bulk actinide materials. Tuning functional properties by using strain engineering in epitaxial thin films is largely lacking. Using uranium dioxide (UO2 ) as a model system, in this work, the authors explore strain engineering in actinide epitaxial thin films and investigate the origin of induced ferromagnetism in an antiferromagnet UO2 . It is found that UO2+ x thin films are hypostoichiometric (x<0) with in-plane tensile strain, while they are hyperstoichiometric (x>0) with in-plane compressive strain. Different from strain engineering in non-actinide oxide thin films, the epitaxial strain in UO2 is accommodated by point defects such as vacancies and interstitials due to the low formation energy. Both epitaxial strain and strain relaxation induced point defects such as oxygen/uranium vacancies and oxygen/uranium interstitials can distort magnetic structure and result in magnetic moments. This work reveals the correlation among strain, point defects and ferromagnetism in strain engineered UO2+ x thin films and the results offer new opportunities to understand the influence of coupled order parameters on the emergent properties of many other actinide thin films.
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Affiliation(s)
- Yogesh Sharma
- Center for Integrated Nanotechnologies (CINT)Los Alamos National LaboratoryLos AlamosNM87545USA
- Glenn T. Seaborg InstituteLos Alamos National LaboratoryLos AlamosNM87545USA
| | - Binod Paudel
- Center for Integrated Nanotechnologies (CINT)Los Alamos National LaboratoryLos AlamosNM87545USA
| | - Amanda Huon
- Neutron Scattering DivisionOak Ridge National LaboratoryOak RidgeTN37831USA
- Materials Science and Technology DivisionOak Ridge National LaboratoryOak RidgeTN37831USA
- Present address:
Department of PhysicsSaint Joseph's UniversityPhiladelphiaPA19131USA
| | - Matthew M. Schneider
- Materials Science and Technology DivisionLos Alamos National LaboratoryLos AlamosNM87545USA
| | - Pinku Roy
- Department of Materials Design and InnovationUniversity at BuffaloThe State University of New YorkBuffaloNY14260USA
| | - Zachary Corey
- Department of Materials Design and InnovationUniversity at BuffaloThe State University of New YorkBuffaloNY14260USA
| | - Rico Schönemann
- National High Magnetic Field Laboratory (NHMFL)Los Alamos National LaboratoryLos AlamosNM87545USA
| | - Andrew C. Jones
- Center for Integrated Nanotechnologies (CINT)Los Alamos National LaboratoryLos AlamosNM87545USA
| | - Marcelo Jaime
- National High Magnetic Field Laboratory (NHMFL)Los Alamos National LaboratoryLos AlamosNM87545USA
| | - Dmitry A. Yarotski
- Center for Integrated Nanotechnologies (CINT)Los Alamos National LaboratoryLos AlamosNM87545USA
| | - Timothy Charlton
- Neutron Scattering DivisionOak Ridge National LaboratoryOak RidgeTN37831USA
| | - Michael R. Fitzsimmons
- Neutron Scattering DivisionOak Ridge National LaboratoryOak RidgeTN37831USA
- Materials Science and Technology DivisionOak Ridge National LaboratoryOak RidgeTN37831USA
- Department of Physics and AstronomyUniversity of TennesseeKnoxvilleTN37996USA
| | - Quanxi Jia
- Department of Materials Design and InnovationUniversity at BuffaloThe State University of New YorkBuffaloNY14260USA
| | - Michael T. Pettes
- Center for Integrated Nanotechnologies (CINT)Los Alamos National LaboratoryLos AlamosNM87545USA
| | - Ping Yang
- Glenn T. Seaborg InstituteLos Alamos National LaboratoryLos AlamosNM87545USA
| | - Aiping Chen
- Center for Integrated Nanotechnologies (CINT)Los Alamos National LaboratoryLos AlamosNM87545USA
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26
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Qin S, Guo Y, Kaliyev AT, Agar JC. Why it is Unfortunate that Linear Machine Learning "Works" so well in Electromechanical Switching of Ferroelectric Thin Films. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202814. [PMID: 35906007 DOI: 10.1002/adma.202202814] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2022] [Revised: 07/07/2022] [Indexed: 06/15/2023]
Abstract
Machine learning (ML) is relied on for materials spectroscopy. It is challenging to make ML models fail because statistical correlations can mimic the physics without causality. Here, using a benchmark band-excitation piezoresponse force microscopy polarization spectroscopy (BEPS) dataset the pitfalls of the so-called "better", "faster", and "less-biased" ML of electromechanical switching are demonstrated and overcome. Using a toy and real experimental dataset, it is demonstrated how linear nontemporal ML methods result in physically reasonable embedding (eigenvalues) while producing nonsensical eigenvectors and generated spectra, promoting misleading interpretations. A new method of unsupervised multimodal hyperspectral analysis of BEPS is demonstrated using long-short-term memory (LSTM) β-variational autoencoders (β-VAEs) . By including LSTM neurons, the ordinal nature of ferroelectric switching is considered. To improve the interpretability of the latent space, a variational Kullback-Leibler-divergency regularization is imposed . Finally, regularization scheduling of β as a disentanglement metric is leveraged to reduce user bias. Combining these experiment-inspired modifications enables the automated detection of ferroelectric switching mechanisms, including a complex two-step, three-state one. Ultimately, this work provides a robust ML method for the rapid discovery of electromechanical switching mechanisms in ferroelectrics and is applicable to other multimodal hyperspectral materials spectroscopies.
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Affiliation(s)
- Shuyu Qin
- Department of Computer Science and Engineering, Lehigh University, Bethlehem, PA, 18015, USA
| | - Yichen Guo
- Department of Materials Science and Engineering, Lehigh University, Bethlehem, PA, 18015, USA
| | - Alibek T Kaliyev
- Department of Computer Science and Engineering, Lehigh University, Bethlehem, PA, 18015, USA
- College of Business, Lehigh University, Bethlehem, PA, 18015, USA
| | - Joshua C Agar
- Department of Materials Science and Engineering, Lehigh University, Bethlehem, PA, 18015, USA
- Department of Mechanical Engineering and Mechanics, Drexel University, Philadelphia, PA, 19104, USA
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27
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Ouyang J, Wang X, Shao C, Cheng H, Zhu H, Ren Y. Microstructural Origin of the High-Energy Storage Performance in Epitaxial Lead-Free Ba(Zr 0.2Ti 0.8)O 3 Thick Films. MATERIALS (BASEL, SWITZERLAND) 2022; 15:6778. [PMID: 36234119 PMCID: PMC9573558 DOI: 10.3390/ma15196778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 08/22/2022] [Accepted: 08/30/2022] [Indexed: 06/16/2023]
Abstract
In our previous work, epitaxial Ba(Zr0.2Ti0.8)O3 thick films (~1-2 μm) showed an excellent energy storage performance with a large recyclable energy density (~58 J/cc) and a high energy efficiency (~92%), which was attributed to a nanoscale entangled heterophase polydomain structure. Here, we propose a detailed analysis of the structure-property relationship in these film materials, using an annealing process to illustrate the effect of nanodomain entanglement on the energy storage performance. It is revealed that an annealing-induced stress relaxation led to the segregation of the nanodomains (via detailed XRD analyses), and a degraded energy storage performance (via polarization-electric field analysis). These results confirm that a nanophase entanglement is an origin of the high-energy storage performance in the Ba(Zr0.2Ti0.8)O3 thick films.
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Affiliation(s)
- Jun Ouyang
- Institute of Advanced Energy Materials and Chemistry, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China
| | - Xianke Wang
- Institute of Advanced Energy Materials and Chemistry, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China
| | - Changtao Shao
- Shandong Industrial Ceramics Research and Design Institute, Zibo 255031, China
| | - Hongbo Cheng
- Institute of Advanced Energy Materials and Chemistry, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China
| | - Hanfei Zhu
- Institute of Advanced Energy Materials and Chemistry, School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353, China
| | - Yuhang Ren
- Physics and Astronomy, Hunter College, The City University of New York, New York, NY 10065, USA
- The Graduate Center, The City University of New York, 365 5th Avenue, New York, NY 10016, USA
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28
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Pesquera D, Fernández A, Khestanova E, Martin LW. Freestanding complex-oxide membranes. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:383001. [PMID: 35779514 DOI: 10.1088/1361-648x/ac7dd5] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Accepted: 07/01/2022] [Indexed: 06/15/2023]
Abstract
Complex oxides show a vast range of functional responses, unparalleled within the inorganic solids realm, making them promising materials for applications as varied as next-generation field-effect transistors, spintronic devices, electro-optic modulators, pyroelectric detectors, or oxygen reduction catalysts. Their stability in ambient conditions, chemical versatility, and large susceptibility to minute structural and electronic modifications make them ideal subjects of study to discover emergent phenomena and to generate novel functionalities for next-generation devices. Recent advances in the synthesis of single-crystal, freestanding complex oxide membranes provide an unprecedented opportunity to study these materials in a nearly-ideal system (e.g. free of mechanical/thermal interaction with substrates) as well as expanding the range of tools for tweaking their order parameters (i.e. (anti-)ferromagnetic, (anti-)ferroelectric, ferroelastic), and increasing the possibility of achieving novel heterointegration approaches (including interfacing dissimilar materials) by avoiding the chemical, structural, or thermal constraints in synthesis processes. Here, we review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for further exploiting their functionalities in technologically relevant devices.
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Affiliation(s)
- David Pesquera
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Abel Fernández
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
| | | | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America
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29
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Meng W, Pal A, Bachilo SM, Weisman RB, Nagarajaiah S. Next-generation 2D optical strain mapping with strain-sensing smart skin compared to digital image correlation. Sci Rep 2022; 12:11226. [PMID: 35781288 PMCID: PMC9250928 DOI: 10.1038/s41598-022-15332-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/02/2022] [Accepted: 06/22/2022] [Indexed: 11/09/2022] Open
Abstract
This study reports next generation optical strain measurement with "strain-sensing smart skin" (S4) and a comparison of its performance against the established digital image correlation (DIC) method. S4 measures strain-induced shifts in the emission wavelengths of single-wall carbon nanotubes embedded in a thin film on the specimen. The new S4 film improves spectral uniformity of the nanotube sensors, avoids the need for annealing at elevated temperatures, and allows for parallel DIC measurements. Noncontact strain maps measured with the S4 films and point-wise scanning were directly compared to those from DIC on acrylic, concrete, and aluminum test specimens, including one with subsurface damage. Strain features were more clearly revealed with S4 than with DIC. Finite element method simulations also showed closer agreement with S4 than with DIC results. These findings highlight the potential of S4 strain measurement technology as a promising alternative or complement to existing technologies, especially when accumulated strains must be detected in structures that are not under constant observation.
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Affiliation(s)
- Wei Meng
- Department of Civil and Environmental Engineering, Rice University, Houston, TX, 77005, USA
| | - Ashish Pal
- Department of Civil and Environmental Engineering, Rice University, Houston, TX, 77005, USA
| | - Sergei M Bachilo
- Department of Chemistry, Rice University, Houston, TX, 77005, USA
| | - R Bruce Weisman
- Department of Chemistry, Rice University, Houston, TX, 77005, USA.,Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Satish Nagarajaiah
- Department of Civil and Environmental Engineering, Rice University, Houston, TX, 77005, USA. .,Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA. .,Department of Mechanical Engineering, Rice University, Houston, TX, 77005, USA.
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30
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Fernandez A, Acharya M, Lee HG, Schimpf J, Jiang Y, Lou D, Tian Z, Martin LW. Thin-Film Ferroelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108841. [PMID: 35353395 DOI: 10.1002/adma.202108841] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2021] [Revised: 03/03/2022] [Indexed: 06/14/2023]
Abstract
Over the last 30 years, the study of ferroelectric oxides has been revolutionized by the implementation of epitaxial-thin-film-based studies, which have driven many advances in the understanding of ferroelectric physics and the realization of novel polar structures and functionalities. New questions have motivated the development of advanced synthesis, characterization, and simulations of epitaxial thin films and, in turn, have provided new insights and applications across the micro-, meso-, and macroscopic length scales. This review traces the evolution of ferroelectric thin-film research through the early days developing understanding of the roles of size and strain on ferroelectrics to the present day, where such understanding is used to create complex hierarchical domain structures, novel polar topologies, and controlled chemical and defect profiles. The extension of epitaxial techniques, coupled with advances in high-throughput simulations, now stands to accelerate the discovery and study of new ferroelectric materials. Coming hand-in-hand with these new materials is new understanding and control of ferroelectric functionalities. Today, researchers are actively working to apply these lessons in a number of applications, including novel memory and logic architectures, as well as a host of energy conversion devices.
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Affiliation(s)
- Abel Fernandez
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Megha Acharya
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Han-Gyeol Lee
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Jesse Schimpf
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Yizhe Jiang
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Djamila Lou
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Zishen Tian
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
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31
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Zhang MH, Shen C, Zhao C, Dai M, Yao FZ, Wu B, Ma J, Nan H, Wang D, Yuan Q, da Silva LL, Fulanović L, Schökel A, Liu P, Zhang H, Li JF, Zhang N, Wang K, Rödel J, Hinterstein M. Deciphering the phase transition-induced ultrahigh piezoresponse in (K,Na)NbO 3-based piezoceramics. Nat Commun 2022; 13:3434. [PMID: 35701480 PMCID: PMC9197837 DOI: 10.1038/s41467-022-31158-x] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Accepted: 06/07/2022] [Indexed: 11/19/2022] Open
Abstract
Here, we introduce phase change mechanisms in lead-free piezoceramics as a strategy to utilize attendant volume change for harvesting large electrostrain. In the newly developed (K,Na)NbO3 solid-solution at the polymorphic phase boundary we combine atomic mapping of the local polar vector with in situ synchrotron X-ray diffraction and density functional theory to uncover the phase change and interpret its underlying nature. We demonstrate that an electric field-induced phase transition between orthorhombic and tetragonal phases triggers a dramatic volume change and contributes to a huge effective piezoelectric coefficient of 1250 pm V−1 along specific crystallographic directions. The existence of the phase transition is validated by a significant volume change evidenced by the simultaneous recording of macroscopic longitudinal and transverse strain. The principle of using phase transition to promote electrostrain provides broader design flexibility in the development of high-performance piezoelectric materials and opens the door for the discovery of high-performance future functional oxides. Functional oxides with coexisting states of comparable energy typically exhibit extraordinary responses to external stimuli. Here, the authors demonstrate that coexisting phase structures provide large electric field-triggered volume change.
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Affiliation(s)
- Mao-Hua Zhang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China.,Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt, Germany
| | - Chen Shen
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt, Germany
| | - Changhao Zhao
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt, Germany
| | - Mian Dai
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt, Germany
| | - Fang-Zhou Yao
- Center of Advanced Ceramic Materials and Devices, Yangtze Delta Region Institute of Tsinghua University, Jiaxing, China
| | - Bo Wu
- Physics Department, Southwest Minzu University, Chengdu, China.
| | - Jian Ma
- Physics Department, Southwest Minzu University, Chengdu, China
| | - Hu Nan
- School of Microelectronics, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Dawei Wang
- School of Microelectronics, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, China
| | - Qibin Yuan
- School of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi'an, China
| | - Lucas Lemos da Silva
- Institute for Applied Materials, Karlsruhe Institute of Technology, Karlsruhe, Germany
| | - Lovro Fulanović
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt, Germany
| | | | - Peitao Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, China
| | - Hongbin Zhang
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt, Germany
| | - Jing-Feng Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Nan Zhang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, China.
| | - Ke Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China. .,Wuzhen Laboratory, Jiaxing, China.
| | - Jürgen Rödel
- Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt, Germany
| | - Manuel Hinterstein
- Institute for Applied Materials, Karlsruhe Institute of Technology, Karlsruhe, Germany
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32
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Multilevel polarization switching in ferroelectric thin films. Nat Commun 2022; 13:3159. [PMID: 35672404 PMCID: PMC9174202 DOI: 10.1038/s41467-022-30823-5] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/13/2022] [Accepted: 05/19/2022] [Indexed: 11/11/2022] Open
Abstract
Ferroic order is characterized by hystereses with two remanent states and therefore inherently binary. The increasing interest in materials showing non-discrete responses, however, calls for a paradigm shift towards continuously tunable remanent ferroic states. Device integration for oxide nanoelectronics furthermore requires this tunability at the nanoscale. Here we demonstrate that we can arbitrarily set the remanent ferroelectric polarization at nanometric dimensions. We accomplish this in ultrathin epitaxial PbZr0.52Ti0.48O3 films featuring a dense pattern of decoupled nanometric 180° domains with a broad coercive-field distribution. This multilevel switching is achieved by driving the system towards the instability at the morphotropic phase boundary. The phase competition near this boundary in combination with epitaxial strain increases the responsiveness to external stimuli and unlocks new degrees of freedom to nano-control the polarization. We highlight the technological benefits of non-binary switching by demonstrating a quasi-continuous tunability of the non-linear optical response and of tunnel electroresistance. Setting any polarization value in ferroelectric thin films is a key step for their implementation in neuromorphic devices. Here, the authors demonstrate continuous modulation of the remanent polarization at the nanoscale in PbZr0.52Ti0.48O3 films.
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Waqar M, Wu H, Chen J, Yao K, Wang J. Evolution from Lead-Based to Lead-Free Piezoelectrics: Engineering of Lattices, Domains, Boundaries, and Defects Leading to Giant Response. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106845. [PMID: 34799944 DOI: 10.1002/adma.202106845] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2021] [Revised: 09/14/2021] [Indexed: 06/13/2023]
Abstract
Piezoelectric materials are known to mankind for more than a century, with numerous advancements made in both scientific understandings and practical applications. In the last two decades, in particular, the research on piezoelectrics has largely been driven by the constantly changing technological demand, and the drive toward a sustainable society. Hence, environmental-friendly "lead-free piezoelectrics" have emerged in the anticipation of replacing lead-based counterparts with at least comparable performance. However, there are still obstacles to be overcome for realizing this objective, while the efforts in this direction already seem to culminate. Therefore, novel structural strategies need to be designed to address these issues and for further breakthrough in this field. Here, various strategies to enhance piezoelectric properties in lead-free systems with fundamental and historical context, and from atomic to macroscopic scale, are explored. The main challenges currently faced in the transition from lead-based to lead-free piezoelectrics are identified and key milestones for future research in this field are suggested. These include: i) decoding the fundamental mechanisms; ii) large temperature-stable piezoresponse; and iii) fabrication-friendly and tailorable composition. Strategic insights and general guidelines for the synergistic design of new piezoelectric materials for obtaining a large piezoelectric response are also provided.
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Affiliation(s)
- Moaz Waqar
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore, 138634, Singapore
- Integrative Sciences and Engineering Programme, National University of Singapore, Singapore, 119077, Singapore
| | - Haijun Wu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
| | - Kui Yao
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore, 138634, Singapore
| | - John Wang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore
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34
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Twisted oxide lateral homostructures with conjunction tunability. Nat Commun 2022; 13:2565. [PMID: 35538081 PMCID: PMC9090740 DOI: 10.1038/s41467-022-30321-8] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/22/2021] [Accepted: 04/13/2022] [Indexed: 11/28/2022] Open
Abstract
Epitaxial growth is of significant importance over the past decades, given it has been the key process of modern technology for delivering high-quality thin films. For conventional heteroepitaxy, the selection of proper single crystal substrates not only facilitates the integration of different materials but also fulfills interface and strain engineering upon a wide spectrum of functionalities. Nevertheless, the lattice structure, regularity and crystalline orientation are determined once a specific substrate is chosen. Here, we reveal the growth of twisted oxide lateral homostructure with controllable in-plane conjunctions. The twisted lateral homostructures with atomically sharp interfaces can be composed of epitaxial “blocks” with different crystalline orientations, ferroic orders and phases. We further demonstrate that this approach is universal for fabricating various complex systems, in which the unconventional physical properties can be artificially manipulated. Our results establish an efficient pathway towards twisted lateral homostructures, adding additional degrees of freedom to design epitaxial films. It is challenging to construct lateral homostructures with controllable geometry and repeated alternating configurations. Here the authors develop a generic approach for fabricating twisted lateral homostructures with tunable crystal orientation, epitaxial constrain, and phase stability.
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35
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Ziatdinov MA, Liu Y, Morozovska AN, Eliseev EA, Zhang X, Takeuchi I, Kalinin SV. Hypothesis Learning in Automated Experiment: Application to Combinatorial Materials Libraries. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201345. [PMID: 35279893 DOI: 10.1002/adma.202201345] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2022] [Revised: 03/08/2022] [Indexed: 06/14/2023]
Abstract
Machine learning is rapidly becoming an integral part of experimental physical discovery via automated and high-throughput synthesis, and active experiments in scattering and electron/probe microscopy. This, in turn, necessitates the development of active learning methods capable of exploring relevant parameter spaces with the smallest number of steps. Here, an active learning approach based on conavigation of the hypothesis and experimental spaces is introduced. This is realized by combining the structured Gaussian processes containing probabilistic models of the possible system's behaviors (hypotheses) with reinforcement learning policy refinement (discovery). This approach closely resembles classical human-driven physical discovery, when several alternative hypotheses realized via models with adjustable parameters are tested during an experiment. This approach is demonstrated for exploring concentration-induced phase transitions in combinatorial libraries of Sm-doped BiFeO3 using piezoresponse force microscopy, but it is straightforward to extend it to higher-dimensional parameter spaces and more complex physical problems once the experimental workflow and hypothesis generation are available.
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Affiliation(s)
- Maxim A Ziatdinov
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Yongtao Liu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Anna N Morozovska
- Institute of Physics, National Academy of Sciences of Ukraine, 46, pr. Nauky, Kyiv, 03028, Ukraine
| | - Eugene A Eliseev
- Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, Krjijanovskogo 3, Kyiv, 03142, Ukraine
| | - Xiaohang Zhang
- Department of Materials Science and Engineering, University of Maryland, College Park, MD, 20742, USA
| | - Ichiro Takeuchi
- Department of Materials Science and Engineering, University of Maryland, College Park, MD, 20742, USA
| | - Sergei V Kalinin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
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36
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Chuliá-Jordán R, Juarez-Perez EJ. Short Photoluminescence Lifetimes Linked to Crystallite Dimensions, Connectivity, and Perovskite Crystal Phases. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2022; 126:3466-3474. [PMID: 35242269 PMCID: PMC8883521 DOI: 10.1021/acs.jpcc.1c08867] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/10/2021] [Revised: 01/31/2022] [Indexed: 06/14/2023]
Abstract
Time-correlated single photon counting has been conducted to gain further insights into the short photoluminescence lifetimes (nanosecond) of lead iodide perovskite (MAPbI3) thin films (∼100 nm). We analyze three different morphologies, compact layer, isolated island, and connected large grain films, from 14 to 300 K using a laser excitation power of 370 nJ/cm2. Lifetime fittings from the Generalized Berberan-Santos decay model range from 0.5 to 6.5 ns, pointing to quasi-direct bandgap emission despite the three different sample strains. The high energy band emission for the isolated-island morphology shows fast recombination rate centers up to 4.8 ns-1, compared to the less than 2 ns-1 for the other two morphologies, similar to that expected in a good quality single crystal of MAPbI3. Low-temperature measurements on samples reflect a huge oscillator strength in this material where the free exciton recombination dominates, explaining the fast lifetimes, the low thermal excitation, and the thermal escape obtained.
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Affiliation(s)
- Raquel Chuliá-Jordán
- Instituto
de Ciencia de los Materiales, Universitat
de València, C/Catedrático J. Beltrán, 2, Paterna 46980, Spain
| | - Emilio J. Juarez-Perez
- ARAID
Foundation, Instituto de Nanociencia y Materiales de Aragón
(INMA), CSIC - Universidad de Zaragoza, Zaragoza 50009, Spain
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Zhu K, Ge G, Yan F, Lin J, Bai H, Li G, Jiang H, Shen B, Zhai J, Chou X. Morphotropic Relaxor Boundary Construction Highly Boosts the Piezoelectric Properties of Bi-Based Lead-Free Thin Films. ACS APPLIED MATERIALS & INTERFACES 2022; 14:8115-8125. [PMID: 35119814 DOI: 10.1021/acsami.1c18936] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
To achieve large electrostrain and low hysteresis, we further optimized a morphotropic phase boundary (MPB) by modulating its local polar symmetries. The construction of a morphotropic relaxor boundary (MRB) in thin films can be achieved by suitable introduction of Bi(Fe0.95Mn0.03Ti0.02)O3 into (Bi0.5Na0.5)TiO3-SrTiO3 to form a solid solution. The designed thin film achieves surprising piezoelectric properties with an inverse piezoelectric coefficient of 179.7 pm V-1 and negligible hysteresis. The composition of two relaxors with different local polar symmetries (tetragonal nanoregions and rhombohedral nanoregions), namely, an MRB, and the coexistence of multiscale domain structures can greatly weaken the anisotropy of polarization, degrade the energy barrier, attenuate the discontinuity of polarization, and achieve a large electrostrain and low hysteresis. The domain dynamics of the PNRs under the action of an external excitation field are analyzed to clarify the enhancement mechanism. This construction of MRBs is feasible for producing lead-free piezoelectric films with high-voltage electrical properties and low hysteresis, and various experimental design and theoretical references are provided.
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Affiliation(s)
- Kun Zhu
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Guanglong Ge
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Fei Yan
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Jinfeng Lin
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Hairui Bai
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Guohui Li
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Haitao Jiang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Bo Shen
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Jiwei Zhai
- Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, Functional Materials Research Laboratory, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China
| | - Xiujian Chou
- Key Laboratory of Instrumentation and Dynamic Measurement of Ministry of Education, North University of China, Taiyuan 030051, China
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38
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Sando D. Strain and orientation engineering in ABO 3perovskite oxide thin films. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:153001. [PMID: 35042194 DOI: 10.1088/1361-648x/ac4c61] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2021] [Accepted: 01/18/2022] [Indexed: 06/14/2023]
Abstract
Perovskite oxides with chemical formula ABO3are widely studied for their properties including ferroelectricity, magnetism, strongly correlated physics, optical effects, and superconductivity. A thriving research direction using such materials is through their integration as epitaxial thin films, allowing many novel and exotic effects to be discovered. The integration of the thin film on a single crystal substrate, however, can produce unique and powerful effects, and can even induce phases in the thin film that are not stable in bulk. The substrate imposed mechanical boundary conditions such as strain, crystallographic orientation, octahedral rotation patterns, and symmetry can also affect the functional properties of perovskite films. Here, the author reviews the current state of the art in epitaxial strain and orientation engineering in perovskite oxide thin films. The paper begins by introducing the effect of uniform conventional biaxial strain, and then moves to describe how the substrate crystallographic orientation can induce symmetry changes in the film materials. Various material case studies, including ferroelectrics, magnetically ordered materials, and nonlinear optical oxides are covered. The connectivity of the oxygen octahedra between film and substrate depending on the strain level as well as the crystallographic orientation is then discussed. The review concludes with open questions and suggestions worthy of the community's focus in the future.
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Affiliation(s)
- Daniel Sando
- School of Materials Science and Engineering, UNSW Sydney, Kensington, 2052, Australia
- ARC Centre of Excellence in Future Low Energy Electronics Technologies (FLEET), UNSW Sydney, Kensington, 2052, Australia
- Mark Wainwright Analytical Centre, UNSW Sydney, Kensington, 2052, Australia
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Mundy JA, Grosso BF, Heikes CA, Ferenc Segedin D, Wang Z, Shao YT, Dai C, Goodge BH, Meier QN, Nelson CT, Prasad B, Xue F, Ganschow S, Muller DA, Kourkoutis LF, Chen LQ, Ratcliff WD, Spaldin NA, Ramesh R, Schlom DG. Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering. SCIENCE ADVANCES 2022; 8:eabg5860. [PMID: 35108054 PMCID: PMC8809685 DOI: 10.1126/sciadv.abg5860] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO3. By confining thin layers of BiFeO3 in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.
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Affiliation(s)
- Julia A. Mundy
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
| | | | - Colin A. Heikes
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD 20878, USA
| | - Dan Ferenc Segedin
- Department of Physics, Harvard University, Cambridge, MA 02138, USA
- Department of Physics, University of California, Berkeley, Berkeley, CA 94720, USA
| | - Zhe Wang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
| | - Yu-Tsun Shao
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
| | - Cheng Dai
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Berit H. Goodge
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
| | - Quintin N. Meier
- Department of Materials, ETH Zürich, Zürich CH-8093, Switzerland
| | - Christopher T. Nelson
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA
| | - Bhagwati Prasad
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA
| | - Fei Xue
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | | | - David A. Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
| | - Lena F. Kourkoutis
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
| | - Long-Qing Chen
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - William D. Ratcliff
- NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD 20878, USA
- Department of Materials Science and Engineering, University of Maryland, College Park, MD 20742, USA
| | | | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA
- Department of Physics, University of California, Berkeley, Berkeley, CA 94720, USA
- Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Darrell G. Schlom
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
- Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, USA
- Corresponding author.
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Liu Y, Ziatdinov M, Kalinin SV. Exploring Causal Physical Mechanisms via Non-Gaussian Linear Models and Deep Kernel Learning: Applications for Ferroelectric Domain Structures. ACS NANO 2022; 16:1250-1259. [PMID: 34964598 DOI: 10.1021/acsnano.1c09059] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Rapid emergence of multimodal imaging in scanning probe, electron, and optical microscopies has brought forth the challenge of understanding the information contained in these complex data sets, targeting the intrinsic correlations between different channels, and further exploring the underpinning causal physical mechanisms. Here, we develop such an analysis framework for Piezoresponse Force Microscopy. We argue that under certain conditions, we can bootstrap experimental observations with the prior knowledge of materials structure to get information on certain nonobserved properties, and demonstrate linear causal analysis for PFM observables. We further demonstrate that the strength of individual causal links between complex descriptors can be ascertained using the deep kernel learning (DKL) model. In this DKL analysis, we use the prior information on domain structure within the image to predict the physical properties. This analysis demonstrates the correlative relationships between morphology, piezoresponse, elastic property, etc., at nanoscale. The prediction of morphology and other physical parameters illustrates a mutual interaction between surface condition and physical properties in ferroelectric materials. This analysis is universal and can be extended to explore the correlative relationships of other multichannel data sets, and allow for high-fidelity reconstruction of underpinning functionalities and physical mechanisms.
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Affiliation(s)
- Yongtao Liu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Maxim Ziatdinov
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Sergei V Kalinin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
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Ramesh R. Materials for a Sustainable Microelectronics Future: Electric Field Control of Magnetism with Multiferroics. J Indian Inst Sci 2022; 102:489-511. [PMID: 35035127 PMCID: PMC8749116 DOI: 10.1007/s41745-021-00277-7] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/02/2021] [Accepted: 11/23/2021] [Indexed: 11/30/2022]
Abstract
This article is written on behalf of many colleagues, collaborators, and researchers in the field of complex oxides as well as current and former students and postdocs who continue to enable and undertake cutting-edge research in the field of multiferroics, magnetoelectrics, and the pursuit of electric-field control of magnetism. What I present is something that is extremely exciting from both a fundamental science and applications perspective and has the potential to revolutionize our world, particularly from a sustainability perspective. To realize this potential will require numerous new innovations, both in the fundamental science arena as well as translating these scientific discoveries into real applications. Thus, this article will attempt to bridge the gap between fundamental materials physics and the actual manifestations of the physical concepts into real-life applications. I hope this article will help spur more translational research within the broad materials community.
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Affiliation(s)
- R Ramesh
- Department of Physics and Department of Materials Science and Engineering, University of California, Berkeley, USA.,Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, USA
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42
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Zhang Y, Qu W, Peng G, Zhang C, Liu Z, Liu J, Li S, Wu H, Meng L, Gao L. Seeing Structural Mechanisms of Optimized Piezoelectric and Thermoelectric Bulk Materials through Structural Defect Engineering. MATERIALS 2022; 15:ma15020487. [PMID: 35057205 PMCID: PMC8780573 DOI: 10.3390/ma15020487] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/06/2021] [Revised: 12/28/2021] [Accepted: 01/05/2022] [Indexed: 02/04/2023]
Abstract
Aberration-corrected scanning transmission electron microscopy (AC-STEM) has evolved into the most powerful characterization and manufacturing platform for all materials, especially functional materials with complex structural characteristics that respond dynamically to external fields. It has become possible to directly observe and tune all kinds of defects, including those at the crucial atomic scale. In-depth understanding and technically tailoring structural defects will be of great significance for revealing the structure-performance relation of existing high-property materials, as well as for foreseeing paths to the design of high-performance materials. Insights would be gained from piezoelectrics and thermoelectrics, two representative functional materials. A general strategy is highlighted for optimizing these functional materials’ properties, namely defect engineering at the atomic scale.
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Affiliation(s)
- Yang Zhang
- Instrumental Analysis Center of Xi’an Jiaotong University, Xi’an Jiaotong University, Xi’an 710049, China; (L.M.); (L.G.)
- Correspondence:
| | - Wanbo Qu
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Guyang Peng
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Chenglong Zhang
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Ziyu Liu
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Juncheng Liu
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Shurong Li
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Haijun Wu
- State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China; (W.Q.); (G.P.); (C.Z.); (Z.L.); (J.L.); (S.L.); (H.W.)
| | - Lingjie Meng
- Instrumental Analysis Center of Xi’an Jiaotong University, Xi’an Jiaotong University, Xi’an 710049, China; (L.M.); (L.G.)
| | - Lumei Gao
- Instrumental Analysis Center of Xi’an Jiaotong University, Xi’an Jiaotong University, Xi’an 710049, China; (L.M.); (L.G.)
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Mangamma G, Das BK, Ramachandran B, Ramachandra Rao MS, Sairam TN. Interplay of piezoresponse and magnetic behavior in Bi0.9A0.1FeO2.95 (A = Ba, Ca) and Bi0.9Ba0.05Ca0.05FeO2.95 co-doped ceramics. RSC Adv 2022; 12:2443-2453. [PMID: 35425236 PMCID: PMC8979133 DOI: 10.1039/d1ra08141a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/06/2021] [Accepted: 01/01/2022] [Indexed: 11/21/2022] Open
Abstract
In the pristine as well as the doped BiFeO3 samples, ferroelectric domains show switching behavior. The regions marked by yellow color loops show either 71° or 109°-domains, whereas those marked by white loops are 180°-domains.
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Affiliation(s)
- G. Mangamma
- Materials Science Group, Indira Gandhi Centre for Atomic Research & Homi Bhabha National Institute, Kalpakkam, Tamil Nadu, 603102, India
| | - B. K. Das
- Materials Science Group, Indira Gandhi Centre for Atomic Research & Homi Bhabha National Institute, Kalpakkam, Tamil Nadu, 603102, India
| | - B. Ramachandran
- Department of Physics, Nano Functional Materials Technology and MSRC, Indian Institute of Technology Madras, Chennai, 600036, Tamil Nadu, India
| | - M. S. Ramachandra Rao
- Department of Physics, Nano Functional Materials Technology and MSRC, Indian Institute of Technology Madras, Chennai, 600036, Tamil Nadu, India
| | - T. N. Sairam
- Materials Science Group, Indira Gandhi Centre for Atomic Research & Homi Bhabha National Institute, Kalpakkam, Tamil Nadu, 603102, India
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44
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Kelley KP, Morozovska AN, Eliseev EA, Sharma V, Yilmaz DE, van Duin ACT, Ganesh P, Borisevich A, Jesse S, Maksymovych P, Balke N, Kalinin SV, Vasudevan RK. Oxygen Vacancy Injection as a Pathway to Enhancing Electromechanical Response in Ferroelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106426. [PMID: 34647655 DOI: 10.1002/adma.202106426] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/16/2021] [Revised: 10/01/2021] [Indexed: 06/13/2023]
Abstract
Since their discovery in late 1940s, perovskite ferroelectric materials have become one of the central objects of condensed matter physics and materials science due to the broad spectrum of functional behaviors they exhibit, including electro-optical phenomena and strong electromechanical coupling. In such disordered materials, the static properties of defects such as oxygen vacancies are well explored but the dynamic effects are less understood. In this work, the first observation of enhanced electromechanical response in BaTiO3 thin films is reported driven via dynamic local oxygen vacancy control in piezoresponse force microscopy (PFM). A persistence in peizoelectricity past the bulk Curie temperature and an enhanced electromechanical response due to a created internal electric field that further enhances the intrinsic electrostriction are explicitly demonstrated. The findings are supported by a series of temperature dependent band excitation PFM in ultrahigh vacuum and a combination of modeling techniques including finite element modeling, reactive force field, and density functional theory. This study shows the pivotal role that dynamics of vacancies in complex oxides can play in determining functional properties and thus provides a new route toward- achieving enhanced ferroic response with higher functional temperature windows in ferroelectrics and other ferroic materials.
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Affiliation(s)
- Kyle P Kelley
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Anna N Morozovska
- Institute of Physics, National Academy of Science of Ukraine, pr. Nauki 46, Kyiv, 03028, Ukraine
| | - Eugene A Eliseev
- Institute for Problems of Materials Science, National Academy of Science of Ukraine, Krjijanovskogo 3, Kyiv, 03142, Ukraine
| | - Vinit Sharma
- National Institute for Computational Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
- Joint Institute for Computational Sciences, University of Tennessee, Knoxville, TN, 37996, USA
| | - Dundar E Yilmaz
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Adri C T van Duin
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Panchapakesan Ganesh
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Albina Borisevich
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Stephen Jesse
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Peter Maksymovych
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Nina Balke
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Sergei V Kalinin
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Rama K Vasudevan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
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45
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Rubab SF, Nazir S. Interplay between Spin-Orbital Coupling and Electron-Correlation: Induction of Phase Transitions and Giant Magnetic Anisotropy in Strained LaSr_{1−x}Ca_xNiReO_6. Phys Chem Chem Phys 2022; 24:17174-17184. [DOI: 10.1039/d2cp01673g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In recent decades, 3d-5d based double perovskite oxides (DPO) have received considerable attention due to the existence of the Mott-insulating (MI) state, which is owing to the spin-orbit coupling (SOC)...
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46
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Paull O, Xu C, Cheng X, Zhang Y, Xu B, Kelley KP, de Marco A, Vasudevan RK, Bellaiche L, Nagarajan V, Sando D. Anisotropic epitaxial stabilization of a low-symmetry ferroelectric with enhanced electromechanical response. NATURE MATERIALS 2022; 21:74-80. [PMID: 34556828 DOI: 10.1038/s41563-021-01098-w] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2020] [Accepted: 08/06/2021] [Indexed: 06/13/2023]
Abstract
Piezoelectrics interconvert mechanical energy and electric charge and are widely used in actuators and sensors. The best performing materials are ferroelectrics at a morphotropic phase boundary, where several phases coexist. Switching between these phases by electric field produces a large electromechanical response. In ferroelectric BiFeO3, strain can create a morphotropic-phase-boundary-like phase mixture and thus generate large electric-field-dependent strains. However, this enhanced response occurs at localized, randomly positioned regions of the film. Here, we use epitaxial strain and orientation engineering in tandem-anisotropic epitaxy-to craft a low-symmetry phase of BiFeO3 that acts as a structural bridge between the rhombohedral-like and tetragonal-like polymorphs. Interferometric displacement sensor measurements reveal that this phase has an enhanced piezoelectric coefficient of ×2.4 compared with typical rhombohedral-like BiFeO3. Band-excitation frequency response measurements and first-principles calculations provide evidence that this phase undergoes a transition to the tetragonal-like polymorph under electric field, generating an enhanced piezoelectric response throughout the film and associated field-induced reversible strains. These results offer a route to engineer thin-film piezoelectrics with improved functionalities, with broader perspectives for other functional oxides.
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Affiliation(s)
- Oliver Paull
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, New South Wales, Australia
| | - Changsong Xu
- Department of Physics and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Xuan Cheng
- Department of Biochemistry and Molecular Biology, Monash University, Clayton, Victoria, Australia
| | - Yangyang Zhang
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, New South Wales, Australia
| | - Bin Xu
- Department of Physics and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
- School of Physical Science and Technology, Soochow University, Suzhou, China
| | - Kyle P Kelley
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Alex de Marco
- Department of Biochemistry and Molecular Biology, Monash University, Clayton, Victoria, Australia
- ARC Centre of Excellence in Advanced Molecular Imaging, Monash University, Clayton, Victoria, Australia
| | - Rama K Vasudevan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Laurent Bellaiche
- Department of Physics and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, USA
| | - Valanoor Nagarajan
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, New South Wales, Australia.
| | - Daniel Sando
- School of Materials Science and Engineering, University of New South Wales Sydney, Kensington, New South Wales, Australia.
- Mark Wainwright Analytical Centre, University of New South Wales Sydney, Kensington, New South Wales, Australia.
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47
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Mun J, Peng W, Roh CJ, Lee S, Matsumura S, Lee JS, Noh TW, Kim M. In Situ Cryogenic HAADF-STEM Observation of Spontaneous Transition of Ferroelectric Polarization Domain Structures at Low Temperatures. NANO LETTERS 2021; 21:8679-8686. [PMID: 34644077 DOI: 10.1021/acs.nanolett.1c02729] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Precise determination of atomic structures in ferroelectric thin films and their evolution with temperature is crucial for fundamental study and design of functional materials. However, this has been impeded by the lack of techniques applicable to a thin-film geometry. Here we use cryogenic scanning transmission electron microscopy (STEM) to observe the atomic structure of a BaTiO3 film on a (111)-SrTiO3 substrate under varying temperatures. Our study explicitly proves a structure transition from a complex polymorphic nanodomain configuration at room temperature transitioning to a homogeneous ground-state rhombohedral structure of BaTiO3 below ∼250 K, which was predicted by phase-field simulation. More importantly, another unexpected transition is revealed, a transition to complex nanodomains below ∼105 K caused by an altered mechanical boundary condition due to the antiferrodistortive phase transition of the SrTiO3 substrate. This study demonstrates the power of cryogenic STEM in elucidating structure-property relationships in numerous functional materials at low temperatures.
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Affiliation(s)
- Junsik Mun
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Wei Peng
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Chang Jae Roh
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Sangmin Lee
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
| | - Syo Matsumura
- Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395, Japan
| | - Jong Seok Lee
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea
| | - Tae Won Noh
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Miyoung Kim
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea
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48
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Zhu K, Song B, Ge G, Lin J, Yan F, Xu L, Yan H, Shen B, Zhai J, Chou X. Construction of multi-domain coexistence enhanced piezoelectric properties of Bi0.5Na0.5TiO3-based thin films. Ann Ital Chir 2021. [DOI: 10.1016/j.jeurceramsoc.2021.05.050] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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49
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Kelley KP, Ren Y, Dasgupta A, Kavle P, Jesse S, Vasudevan RK, Cao Y, Martin LW, Kalinin SV. Probing Metastable Domain Dynamics via Automated Experimentation in Piezoresponse Force Microscopy. ACS NANO 2021; 15:15096-15103. [PMID: 34495651 DOI: 10.1021/acsnano.1c05455] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The dynamics of complex topological defects in ferroelectric materials is explored using automated experimentation in piezoresponse force microscopy. Specifically, a complex trigger system (i.e., "FerroBot") is employed to study metastable domain-wall dynamics in Pb0.6Sr0.4TiO3 thin films. Several regimes of superdomain wall dynamics have been identified, including smooth domain-wall motion and significant reconfiguration of the domain structures. We have further demonstrated that microscopic mechanisms of the domain-wall dynamics can be identified; i.e., domain-wall bending can be separated from irreversible domain reconfiguration regimes. In conjunction, phase-field modeling was used to corroborate the observed mechanisms. As such, the observed superdomain dynamics can provide a model system for classical ferroelectric dynamics, much like how colloidal crystals provide a model system for atomic and molecular systems.
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Affiliation(s)
- Kyle P Kelley
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Yao Ren
- Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019, United States
| | - Arvind Dasgupta
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, California 94720, United States
| | - Pravin Kavle
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, California 94720, United States
| | - Stephen Jesse
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Rama K Vasudevan
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Ye Cao
- Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019, United States
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California Berkeley, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Sergei V Kalinin
- The Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
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50
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Dubnack O, Müller FA. Oxidic 2D Materials. MATERIALS 2021; 14:ma14185213. [PMID: 34576436 PMCID: PMC8469416 DOI: 10.3390/ma14185213] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2021] [Revised: 09/07/2021] [Accepted: 09/08/2021] [Indexed: 11/18/2022]
Abstract
The possibility of producing stable thin films, only a few atomic layers thick, from a variety of materials beyond graphene has led to two-dimensional (2D) materials being studied intensively in recent years. By reducing the layer thickness and approaching the crystallographic monolayer limit, a variety of unexpected and technologically relevant property phenomena were observed, which also depend on the subsequent arrangement and possible combination of individual layers to form heterostructures. These properties can be specifically used for the development of multifunctional devices, meeting the requirements of the advancing miniaturization of modern manufacturing technologies and the associated need to stabilize physical states even below critical layer thicknesses of conventional materials in the fields of electronics, magnetism and energy conversion. Differences in the structure of potential two-dimensional materials result in decisive influences on possible growth methods and possibilities for subsequent transfer of the thin films. In this review, we focus on recent advances in the rapidly growing field of two-dimensional materials, highlighting those with oxidic crystal structure like perovskites, garnets and spinels. In addition to a selection of well-established growth techniques and approaches for thin film transfer, we evaluate in detail their application potential as free-standing monolayers, bilayers and multilayers in a wide range of advanced technological applications. Finally, we provide suggestions for future developments of this promising research field in consideration of current challenges regarding scalability and structural stability of ultra-thin films.
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Affiliation(s)
- Oliver Dubnack
- Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena, Germany;
| | - Frank A. Müller
- Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena, Germany;
- Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena, Germany
- Correspondence:
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