Self-Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs

Self-Assembly Nanopillar/Superlattice Hierarchical Structure: Boosting AlGaN Crystalline Quality and Achieving High-Performance Ultraviolet Avalanche Photodetector

As a burgeoning wide-band gap semiconductor material, AlxGa1-xN alloy has attracted great attention for versatile applications due to its superior properties. However, its poor crystalline quality has restricted the employment of AlGaN on electronic devices for a long time. Herein, we proposed a nanopillar/superlattice hierarchical structure for AlGaN epitaxy to boost the crystalline quality. The scale-controllable AlN nanopillar template is fabricated from a nickel self-assembly process. AlGaN initiates the epitaxial laterally overgrowth mode based on the nanopatterned template. In addition, the AlxGa1-xN/AlyGa1-yN superlattice structure could effectively block the propagation of threading dislocation segments. The kinetics of the dislocation and epitaxy process in the hierarchical structure is intuitively demonstrated and analyzed. Consequently, the dislocation density of AlGaN grown by this method is significantly reduced by more than 30 times compared to the AlN template. No threading dislocation segments were observed in the 4 μm TEM field of view. Moreover, based on the hierarchical structure, we also fabricated an AlGaN ultraviolet avalanche photodiode (APD). The APD exhibits superior performance, achieving a maximum gain of 1.3 × 105 and high responsivity of 1.46 A/W at 324 nm. The reliability of the nanopillar/superlattice AlGaN epitaxial procedure is anticipated to shed new light on the nitride semiconductor material, further bringing a breakthrough to wide-band gap electronic devices.

The era of nano-bionic: 2D materials for wearable and implantable body sensors

Nano-bionics have the potential of revolutionizing modern medicine. Among nano-bionic devices, body sensors allow to monitor in real-time the health of patients, to achieve personalized medicine, and even to restore or enhance human functions. The advent of two-dimensional (2D) materials is facilitating the manufacturing of miniaturized and ultrathin bioelectronics, that can be easily integrated in the human body. Their unique electronic properties allow to efficiently transduce physical and chemical stimuli into electric current. Their flexibility and nanometric thickness facilitate the adaption and adhesion to human body. The low opacity permits to obtain transparent devices. The good cellular adhesion and reduced cytotoxicity are advantageous for the integration of the devices in vivo. Herein we review the latest and more significant examples of 2D material-based sensors for health monitoring, describing their architectures, sensing mechanisms, advantages and, as well, the challenges and drawbacks that hampers their translation into commercial clinical devices.

Application of Nanostructured TiO2 in UV Photodetectors: A Review

As a wide-bandgap semiconductor material, titanium dioxide (TiO₂ ), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting-edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and low-cost fabrication, the construction of high-performance photodetectors (PDs) based on TiO₂ nanostructures is being extensively developed. An elaborate microtopography and device configuration is the most widely used strategy to achieve efficient TiO₂ -based PDs with high photoelectric performances; however, a deep understanding of all the key parameters that influence the behavior of photon-generated carriers, is also highly required to achieve improved photoelectric performances, as well as their ultimate functional applications. Herein, an in-depth illustration of the electrical and optical properties of TiO₂ nanostructures in addition to the advances in the technological issues such as preparation, microdefects, p-type doping, bandgap engineering, heterojunctions, and functional applications are presented. Finally, a future outlook for TiO₂ -based PDs, particularly that of further functional applications is provided. This work will systematically illustrate the fundamentals of TiO₂ and shed light on the preparation of more efficient TiO₂ nanostructures and heterojunctions for future photoelectric applications.

GaN/MgI2 van der Waals heterostructure: a two-factor tunable photocatalyst for hydrogen evolution

With the increasing environmental pollution and energy crisis, it is significant to develop environmentally friendly and adjustable photocatalysts for water splitting. Here we explored the optoelectronic properties of several H-GaN/MgI₂ vdW heterostructures by regulating different polarization surfaces and numbers of GaN layers. Our results demonstrate that all structures, except 2L-Ga-GaN/MgI₂, exhibit excellent physical stability. Moreover, the band structures and band edge positions demonstrate that only the heterostructure of 3L-Ga-GaN/MgI₂ with both suitable band alignment (type-II) and an acceptable band gap (∼1.92 eV) is most satisfactory for water splitting. Additionally, the absorption coefficient of the 3L-Ga-GaN/MgI₂ heterostructure can reach over ∼10⁵ cm^-1, which has further confirmed its excellent advantage in photocatalysis. Finally, in the case of 6% external strain for the 3L-Ga-GaN/MgI₂ heterostructure, a rollover in band alignment (from type-II to type-I) is exhibited. These promising features of the GaN/MgI₂ vdW heterostructure give a new paradigm for developing novel efficient and adjustable photocatalytic water-splitting materials.

Non-Ultrawide Bandgap Semiconductor GaSe Nanobelts for Sensitive Deep Ultraviolet Light Photodetector Application

In this paper, the authors report the fabrication of a sensitive deep ultraviolet (DUV) photodetector by using an individual GaSe nanobelt with a thickness of 52.1 nm, which presents the highest photoresponse at 265 nm illumination with a responsivity and photoconductive gain of about 663 A W^-1 and 3103 at a 3 V bias, respectively, comparable to or even better than other reported devices based on conventional wide bandgap semiconductors. According to the simulation, this photoelectric property is associated with the wavelength-dependent absorption coefficient of the GaSe crystal, for which incident light with shorter wavelengths will be absorbed near the surface, while light with longer wavelengths will have a larger penetration depth, leading to a blueshift of the absorption edge with decreasing thickness. Further finite element method (FEM) simulation reveals that the relatively thin GaSe nanobelt exhibits an enhanced transversal standing wave pattern compared to its thicker counterpart at a wavelength of 265 nm, leading to an enhanced light-matter interaction and thereby more efficient photocurrent generation. The device can also function as an effective image sensor with acceptable spatial resolution. This work will shed light on the facile fabrication of a high-performance DUV photodetector from non-ultrawide bandgap semiconductors.

A high-performance polarization-sensitive and stable self-powered UV photodetector based on a dendritic crystal lead-free metal-halide CsCu2I3/GaN heterostructure

Polarization-sensitive photodetectors are the core of optics applications and have been successfully demonstrated in photodetectors based on the newly-emerging metal-halide perovskites. However, achieving high polarization sensitivity is still extremely challenging. In addition, most of the previously reported photodetectors were concentrated on 1D lead-halide perovskites and 2D asymmetric intrinsic structure materials, but suffered from being external bias driven, lead-toxicity, poor stability and complex processes, severely limiting their practical applications. Here, we demonstrate a high-performance polarization-sensitive and stable polarization-sensitive UV photodetector based on a dendritic crystal lead-free metal-halide CsCu₂I₃/GaN heterostructure. By combining the anisotropic morphology and asymmetric intrinsic structure of CsCu₂I₃ dendrites with the isotropic material GaN film, a high specific surface area and built-in electric field are achieved, exhibiting an ultra-high polarization selectivity up to 28.7 and 102.8 under self-driving mode and -3 V bias, respectively. To our knowledge, such a high polarization selectivity has exceeded those of all of the reported perovskite-based devices, and is comparable to, or even superior to, those of the conventional 2D heterostructure materials. Interestingly, the unsealed device shows outstanding stability, and can be stored for over 2 months, and effectively maintained the performance even after repeated heating (373K)-cooling (300K) for different periods of time in ambient air, indicating a remarkable temperature tolerance and desired compatibility for applications under harsh conditions. Such excellent performance and simple method strongly show that the CsCu₂I₃/GaN heterojunction photodetector has great potential in practical applications with high polarization-sensitivity. This work provides a new insight into designing novel high-performance polarization-sensitive optoelectronic devices.

In Situ Fabrication of PdSe2/GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic Ratio

Polarization-sensitive ultraviolet (UV) photodetection is of great technological importance for both civilian and military applications. Two-dimensional (2D) group-10 transition-metal dichalcogenides (TMDs), especially palladium diselenide (PdSe₂), are promising candidates for polarized photodetection due to their low-symmetric crystal structure. However, the lack of an efficient heterostructure severely restricts their applications in UV-polarized photodetection. Here, we develop a PdSe₂/GaN Schottky junction by in situ van der Waals growth for highly polarization-sensitive UV photodetection. Owing to the high-quality junction, the device exhibits an appealing UV detection performance in terms of a large responsivity of 249.9 mA/W, a high specific detectivity, and a fast response speed. More importantly, thanks to the puckered structure of the PdSe₂ layer, the device is highly sensitive to polarized UV light with a large dichroic ratio up to 4.5, which is among the highest for 2D TMD material-based UV polarization-sensitive photodetectors. These findings further enable the demonstration of the outstanding polarized UV imaging capability of the Schottky junction, as well as its utility as an optical receiver for secure UV optical communication. Our work offers a strategy to fabricate the PdSe₂-based heterostructure for high-performance polarization-sensitive UV photodetection.

Patterning of Wafer-Scale MXene Films for High-Performance Image Sensor Arrays

As a rapidly growing family of 2D transition metal carbides and nitrides, MXenes are recognized as promising materials for the development of future electronics and optoelectronics. So far, the reported patterning methods for MXene films lack efficiency, resolution, and compatibility, resulting in limited device integration and performance. Here, a high-performance MXene image sensor array fabricated by a wafer-scale combination patterning method of an MXene film is reported. This method combines MXene centrifugation, spin-coating, photolithography, and dry-etching and is highly compatible with mainstream semiconductor processing, with a resolution up to 2 µm, which is at least 100 times higher than other large-area patterning methods reported previously. As a result, a high-density integrated array of 1024-pixel Ti₃ C₂ T_x /Si photodetectors with a detectivity of 7.73 × 10¹⁴ Jones and a light-dark current ratio (I_light /I_dark ) of 6.22 × 10⁶ , which is the ultrahigh value among all reported MXene-based photodetectors, is fabricated. This patterning technique paves a way for large-scale high-performance MXetronics compatible with mainstream semiconductor processes.

Vertical 1D/2D Heterojunction Architectures for Self-Powered Photodetection Application: GaN Nanorods Grown on Transition Metal Dichalcogenides

Van der Waals (vdW) heterojunctions based on two-dimensional (2D) transition metal dichalcogenide (TMD) materials have attracted the attention of researchers to conduct fundamental investigations on emerging physical phenomena and expanding diverse nano-optoelectronic devices. Herein, the quasi-van der Waals epitaxial (QvdWE) growth of vertically aligned one-dimensional (1D) GaN nanorod arrays (NRAs) on TMDs/Si substrates is reported, and their vdW heterojunctions in the applications of high-performance self-powered photodetection are demonstrated accordingly. Such 1D/2D hybrid systems fully combine the advantages of the strong light absorption of 1D GaN nanoarrays and the excellent electrical properties of 2D TMD materials, boosting the photogenerated current density, which demonstrates a light on/off ratio above 10⁵. The device exhibits a competitive photovoltaic photoresponsivity over 10 A W^-1 under a weak detectable light signal without any external bias, which is attributed to the efficient photogenerated charge separation under the strong built-in potential from the type-II band alignment of GaN NRAs/TMDs. This work presents a QvdWE route to prepare 1D/2D heterostructures for the fabrication of self-powered photodetectors, which shows promising potentials for practical applications of space communications, sensing networks, and environmental monitoring.

Ferro-Pyro-Phototronic Effect in Monocrystalline 2D Ferroelectric Perovskite for High-Sensitive, Self-Powered, and Stable Ultraviolet Photodetector

2D hybrid perovskite ferroelectrics have drawn great attention in the field of photodetection, because the spontaneous polarization-induced built-in electric field can separate electron-hole pairs, and makes self-powered photodetection possible. However, most of the 2D hybrid perovskite-based photodetectors focused on the detection of visible light, and only a few reports realized the self-powered and sensitive ultraviolet (UV) detection using wide bandgap hybrid perovskites. Here, 2D ferroelectric PMA₂PbCl₄ monocrystalline microbelt (MMB)-based PDs are demonstrated. By using the ferro-pyro-phototronic effect, the self-powered Ag/Bi/2D PMA₂PbCl₄ MMB/Bi/Ag PDs show a high photoresponsivity up to 9 A/W under 320 nm laser illumination, which is much higher than those of previously reported self-powered UV PDs. Compared with responsivity induced by the photovoltaic effect, the responsivity induced by the ferro-pyro-phototronic effect is 128 times larger. The self-powered PD also shows fast response and recovery speed, with the rise time and fall time of 162 and 226 μs, respectively. More importantly, the 2D PMA₂PbCl₄ MMB-based PDs with Bi/Ag electrode exhibit significant stability when subjected to high humidity, continuous laser illumination, and thermal conditions. Our findings would shed light on the ferro-pyro-phototronic-effect-based devices, and provide a good method for high-performance UV detection.

Schottky-type GaN-based UV photodetector with atomic-layer-deposited TiN thin film as electrodes

In this work, a GaN-based UV photodetector with an asymmetric electrode structure was fabricated by atomic layer deposition (ALD) of TiN layers. The thickness of the TiN can be monitored in situ by a quartz crystal microbalance (QCM) and precisely controlled through the modulation of deposition cycles. During the ALD process, periodic variation in the QCM frequency was observed and correlated to the physical adsorption, chemical bonding, and the excessive precursor exhaust, which included tetrakis(dimethylamino)titanium (TDMAT) and N sources. The asymmetric TiN/GaN/TiN photodetector showed excellent photosensing performance, with a UV-visible rejection ratio of 173, a responsivity of 4.25 A/W, a detectivity of 1.1×10¹³ Jones, and fast response speeds (a rise time of 69 μs and a decay time of 560 μs). Moreover, the device exhibits high stability, with an attenuation of only approximately 0.5% after 360 nm light irradiation for 157 min. This result indicates the potential of TiN as a transparent contact electrode for GaN-based optoelectronic devices.

Flexible 2D Cu Metal: Organic Framework@MXene Film Electrode with Excellent Durability for Highly Selective Electrocatalytic NH3 Synthesis

Electrocatalytic nitrate reduction to ammonia (ENRA) is an effective strategy to resolve environmental and energy crisis, but there are still great challenges to achieve high activity and stability synergistically for practical application in a fluid environment. The flexible film electrode may solve the abovementioned problem of practical catalytic application owing to the advantages of low cost, light weight, eco-friendliness, simple and scalable fabrication, extensive structural stability, and electrocatalytic reliability. Herein, 2D hybridization copper 1,4-benzenedi-carboxylate (CuBDC) has been grown on electronegative MXene nanosheets (Ti₃C₂T_x) seamlessly to prepare a 2D flexible CuBDC@Ti₃C₂T_x electrode for ENRA. The flexible electrode simultaneously exhibits high Faradaic efficiency (86.5%) and excellent stability for NH₃ synthesis, which are comparable to previously reported nanomaterials toward ENRA. Especially, the flexible electrode maintains outstanding FE _NH3 toward ENRA after the bending, twisting, folding, and crumpling tests, indicating excellent electroconductibility, high stability, and durability. This work not only provides mild permeation-mediated strategy to fabricate a flexible electrode but also explores the practical applications of the electrode with effectively environmental adaptability in solving global environmental contamination and energy crisis by effective ENRA.

Programmable fabrication of a miniaturized photodetector with thermal stability via femtosecond laser direct writing

With the ever-increasing sophistication of integration of electronic devices, the problem of heat accumulation has become ever more serious. Here, a miniaturized photodetector with thermal stability was fabricated by combining the excellent characteristics of femtosecond laser direct writing (FsLDW) and silicon (Si). The sensing part of the photodetector is a Si microwire composed of Si nanoparticles and the sensing area is only 300 μm². As a result, the photodetector can work stably at a temperature as high as 100°C and the response speed of the photodetector becomes notably faster at high temperatures. Furthermore, an image sensor was successfully fabricated by integrating 16 photodetectors and the image sensor can also work stably at high temperatures. This work demonstrates the potential for application of photodetectors based on Si microwires prepared by FsLDW under harsh conditions.

Two-dimensional Ti3C2 MXene-based nanostructures for emerging optoelectronic applications

Since the first discovery of Ti₃C₂ in 2011, two-dimensional (2D) transition-metal carbides, carbonitrides and nitrides, known as MXenes, have attracted significant attention. Due to their outstanding electronic, optical, mechanical, and thermal properties, versatile structures and surface chemistries, Ti₃C₂ MXenes have emerged as new candidates with great potential for applications in optoelectronic devices, such as photovoltaics, photodetectors and photoelectrochemical devices. The excellent metallic conductivity, high anisotropic carrier mobility, good structural and chemical stabilities, high optical transmittance, excellent mechanical strength, tunable work functions, and wide range of optical absorption properties of Ti₃C₂ MXene nanostructures are the key to their success in a number of electronic and photonic device applications. Herein, we summarize the fundamental properties and preparation of pure Ti₃C₂ MXenes, functionalized Ti₃C₂ MXenes and their hybrid nanocomposites, as well as their optoelectronic applications. In the end, the perspective and current challenges of Ti₃C₂ MXenes toward the development of advanced MXene-based nanostructures are briefly discussed for future optoelectronic applications.

High performance polarization-sensitive self-powered imaging photodetectors based on a p-Te/n-MoSe2 van der Waals heterojunction with strong interlayer transition

In-plane anisotropic two-dimensional (2D) materials offer great opportunities for developing novel polarization sensitive photodetectors without being in conjunction with filters and polarizers. However, owing to low linear dichroism ratio and insufficient optical absorption of the few layer 2D materials, the comprehensive performance of the present polarization sensitive photodetectors based on 2D materials is still lower than the practical application requirements. In this work, after systematic investigation of the structural, vibrational, and optical anisotropies of layer-structured Te nanosheets, a novel polarization-sensitive self-powered imaging photodetector with high comprehensive performance based on a p-Te/n-MoSe₂ van der Waals heterojunction (vdWH) with strong interlayer transition is proposed. Owing to the high rectification ratio (10⁴) of the diode, the device shows excellent photovoltaic characteristics. As examples, the photodetectors exhibited an ultrahigh on/off ratio of 10⁵ at a relatively weak light intensity (4.73 mw cm^-2), and the highest responsivity of the device could reach 2106 mA W^-1 without any power supply. In particular, benefitting from the excellent dichroism properties of Te nanosheets synthesized in this work, the anisotropic ratio of the photocurrent (I_max/I_min) could reach as high as 16.39 (405 nm, 24.2 mw cm^-2). This value obtained under zero bias voltage is much greater than that of present 2D material photodetectors even at a bias voltage. In addition, the highest detectivity is 2.91 × 10¹³ Jones at a low bias voltage of -0.08 V. This work provides a novel building block for high resolution polarization-sensitive photodetection of weak signals in complex environments.

Ultrafast Speed, Dark Current Suppression, and Self-Powered Enhancement in TiO2-Based Ultraviolet Photodetectors by Organic Layers and Ag Nanowires Regulation

TiO₂-based photodetectors (PDs) have been hotspots in recent years for their excellent thermal stabilities and optoelectronic performance under ultraviolet (UV) light. However, the high dark current caused by defects in TiO₂ films has limited the detectivity (D) of these PDs. Here, the dark current of a TiO₂-based PD was effectively reduced by 3 magnitudes (from 0.1 mA to 20 nA) and D was increased to 1.2 × 10¹⁴ Jones by introducing PC71BM. The TiO₂/PC71BM heterojunction also made the PD self-powered, and by further introducing an interface layer of PEDOT:PSS and finely optimizing the electrode Ag nanowires (Ag NWs), the self-powered responsivity (R) was increased to 33 mA/W. Ultrafast rise/decay times (129 ns/1 ms at -1 V and 0.06 s/<1 μs at 0 V) were achieved. This work successfully applied an organic-inorganic heterojunction, an organic interface, and Ag NWs to suppress the dark current and enhance the self-powered photocurrent/R of inorganic PDs, providing a feasible strategy in high-performance UV PDs' design.

Pt/(InGa)2O3/n-Si Heterojunction-Based Solar-Blind Ultraviolet Photovoltaic Detectors with an Ideal Absorption Cutoff Edge of 280 nm

Ga₂O₃ is a popular material for research on solar-blind ultraviolet detectors. However, its absorption cutoff edge is 253 nm, which is not an ideal cutoff edge of 280 nm. In this work, by adjusting the ratio of In/Ga elements in the films, a high-quality (In_0.11Ga_0.89)₂O₃ film with an absorption cutoff edge of 280 nm was obtained, which owns a uniform surface and preferred orientation. On this basis, a solar-blind ultraviolet photovoltaic detector was constructed based on the Pt/(In_0.11Ga_0.89)₂O₃/n-Si heterojunction. When the device is exposed to 254 nm UV light, its open-circuit voltage (V_OC) can reach 354 mV. Under 0 V bias, the device has a responsivity of 0.48 mA/W with a rise time of 0.47 s and a decay time of 0.37 s; under -7 V bias, the device achieves a responsivity of 16.96 mA/W with a rise time of 0.17 s and a decay time of 0.33 s. The spectral response characteristics of the device show that it has a selective response to solar-blind ultraviolet light (cutoff wavelength is 280 nm) with a rejection ratio (R_{254 nm}/R_{310 nm}), which is greater by more than two orders of magnitude. This work provides a good reference for adjusting the band gap of Ga₂O₃-based films and broadening their application fields.

The Photodetectors Based on Lateral Monolayer MoS2/WS2 Heterojunctions

Monolayer transition metal dichalcogenides (TMDs) show promising potential for next-generation optoelectronics due to excellent light capturing and photodetection capabilities. Photodetectors, as important components of sensing, imaging and communication systems, are able to perceive and convert optical signals to electrical signals. Herein, the large-area and high-quality lateral monolayer MoS2/WS2 heterojunctions were synthesized via the one-step liquid-phase chemical vapor deposition approach. Systematic characterization measurements have verified good uniformity and sharp interfaces of the channel materials. As a result, the photodetectors enhanced by the photogating effect can deliver competitive performance, including responsivity of ~ 567.6 A/W and detectivity of ~ 7.17 × 1011 Jones. In addition, the 1/f noise obtained from the current power spectrum is not conductive to the development of photodetectors, which is considered as originating from charge carrier trapping/detrapping. Therefore, this work may contribute to efficient optoelectronic devices based on lateral monolayer TMD heterostructures.