Direct low-temperature nanographene CVD synthesis over a dielectric insulator

Transfer free graphene growth on SiO2 substrate at 250 °C

Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO₂ covered Si (SiO₂/Si) substrate at 250 °C based on a solid-liquid-solid reaction. The key to this approach is the catalyst metal, which is not popular for graphene growth by chemical vapor deposition. A catalyst metal film of 500 nm thick was deposited onto an amorphous C (50 nm thick) coated SiO₂/Si substrate. The sample was then annealed at 250 °C under vacuum condition. Raman spectra measured after the removal of the catalyst by chemical etching showed intense G and 2D peaks together with a small D and intense SiO₂ related peaks, confirming the transfer free growth of multilayer graphene on SiO₂/Si. The domain size of the graphene confirmed by optical microscope and atomic force microscope was about 5 μm in an average. Thus, this approach will open up a new route for transfer free graphene growth at low temperatures.

Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition

Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω·sq^-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies.

Self-Terminating Confinement Approach for Large-Area Uniform Monolayer Graphene Directly over Si/SiOx by Chemical Vapor Deposition

To synthesize graphene by chemical vapor deposition (CVD) both in large area and with uniform layer number directly over Si/SiO_x has proven challenging. The use of catalytically active metal substrates, in particular Cu, has shown far greater success and therefore is popular. That said, for electronics applications it requires a transfer procedure, which tends to damage and contaminate the graphene. Thus, the direct fabrication of uniform graphene on Si/SiO_x remains attractive. Here we show a facile confinement CVD approach in which we simply "sandwich" two Si wafers with their oxide faces in contact to form uniform monolayer graphene. A thorough examination of the material reveals it comprises faceted grains despite initially nucleating as round islands. Upon clustering, they facet to minimize their energy. This behavior leads to faceting in polygons, as the system aims to ideally form hexagons, the lowest energy form, much like the hexagonal cells in a beehive, which requires the minimum wax. This process also leads to a near minimal total grain boundary length per unit area. This fact, along with the high graphene quality, is reflected in its electrical performance, which is highly comparable with graphene formed over other substrates, including Cu. In addition, the graphene growth is self-terminating. Our CVD approach is easily scalable and will make graphene formation directly on Si wafers competitive against that from metal substrates, which suffer from transfer. Moreover, this CVD route should be applicable for the direct synthesis of other 2D materials and their van der Waals heterostructures.

Metal-catalyst-free growth of graphene on insulating substrates by ammonia-assisted microwave plasma-enhanced chemical vapor deposition

We study the metal-catalyst-free growth of uniform and continuous graphene on different insulating substrates by microwave plasma-enhanced chemical vapor deposition (PECVD) with a gas mixture of C₂H₂, NH₃, and H₂ at a temperature of 700–750 °C.

Polyolefin/graphene nanocomposites: a review

The present article is mainly focused on literature studies centred on polyolefin (especially PE and PP) nanocomposites based on graphene and its derivatives.

As-grown graphene/copper nanoparticles hybrid nanostructures for enhanced intensity and stability of surface plasmon resonance

The transfer-free fabrication of the high quality graphene on the metallic nanostructures, which is highly desirable for device applications, remains a challenge. Here, we develop the transfer-free method by direct chemical vapor deposition of the graphene layers on copper (Cu) nanoparticles (NPs) to realize the hybrid nanostructures. The graphene as-grown on the Cu NPs permits full electric contact and strong interactions, which results in a strong localization of the field at the graphene/copper interface. An enhanced intensity of the localized surface plasmon resonances (LSPRs) supported by the hybrid nanostructures can be obtained, which induces a much enhanced fluorescent intensity from the dye coated hybrid nanostructures. Moreover, the graphene sheets covering completely and uniformly on the Cu NPs act as a passivation layer to protect the underlying metal surface from air oxidation. As a result, the stability of the LSPRs for the hybrid nanostructures is much enhanced compared to that of the bare Cu NPs. The transfer-free hybrid nanostructures with enhanced intensity and stability of the LSPRs will enable their much broader applications in photonics and optoelectronics.

Controllable Synthesis of Graphene by Plasma-Enhanced Chemical Vapor Deposition and Its Related Applications

Graphene and its derivatives hold a great promise for widespread applications such as field-effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low-cost, scalable, and controllable manner. Plasma-enhanced chemical vapor deposition (PECVD) is a low-temperature, controllable, and catalyst-free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed.

Ultra-smooth glassy graphene thin films for flexible transparent circuits

Large-area graphene thin films are prized in flexible and transparent devices. We report on a type of glassy graphene that is in an intermediate state between glassy carbon and graphene and that has high crystallinity but curly lattice planes. A polymer-assisted approach is introduced to grow an ultra-smooth (roughness, <0.7 nm) glassy graphene thin film at the inch scale. Owing to the advantages inherited by the glassy graphene thin film from graphene and glassy carbon, the glassy graphene thin film exhibits conductivity, transparency, and flexibility comparable to those of graphene, as well as glassy carbon-like mechanical and chemical stability. Moreover, glassy graphene-based circuits are fabricated using a laser direct writing approach. The circuits are transferred to flexible substrates and are shown to perform reliably. The glassy graphene thin film should stimulate the application of flexible transparent conductive materials in integrated circuits.

Fabrication of a Contamination-Free Interface between Graphene and TiO2 Single Crystals

The uniform and seamless interface between graphene and semiconductors, that is, without adsorbates or contamination in between, is of importance for optimizing the electronic and catalytic performances of the combined system. In this work, we try to synthesize graphene directly over atomically flat TiO₂ single-crystal surfaces using chemical vapor deposition (CVD) with acetylene as the carbon source. The facile synthetic conditions facilitate the formation of ultrathin polycrystalline graphene films with nanosize domains, while reasonably maintaining the terrace-and-step morphologies of the TiO₂ surfaces. The established recipe can thus lead to the construction of a contamination-free interface between graphene and reducible oxides and also provide a well-defined platform for further investigations into the physicochemical properties of the graphene-oxide complex system from an atomic/molecular level.

Direct CVD Graphene Growth on Semiconductors and Dielectrics for Transfer-Free Device Fabrication

Graphene is the most broadly discussed and studied two-dimensional material because of its preeminent physical, mechanical, optical, and thermal properties. Until now, metal-catalyzed chemical vapor deposition (CVD) has been widely employed for the scalable production of high-quality graphene. However, in order to incorporate the graphene into electronic devices, a transfer process from metal substrates to targeted substrates is inevitable. This process usually results in contamination, wrinkling, and breakage of graphene samples - undesirable in graphene-based technology and not compatible with industrial production. Therefore, direct graphene growth on desired semiconductor and dielectric substrates is considered as an effective alternative. Over the past years, there have been intensive investigations to realize direct graphene growth using CVD methods without the catalytic role of metals. Owing to the low catalytic activity of non-metal substrates for carbon precursor decomposition and graphene growth, several strategies have been designed to facilitate and engineer graphene fabrication on semiconductors and insulators. Here, those developed strategies for direct CVD graphene growth on semiconductors and dielectrics for transfer-free fabrication of electronic devices are reviewed. By employing these methods, various graphene-related structures can be directly prepared on desired substrates and exhibit excellent performance, providing versatile routes for varied graphene-based materials fabrication.

Aromatic Character of Irregular-Shaped Nanographenes

We found that the Clar sextet formula with the maximum number of sextet rings cannot always be defined meaningfully for large irregular-shaped PAHs. It is true that edge structure is always a primary determinant of the PAH aromaticity pattern. In large PAH molecules, every edge structure modifies the aromaticity pattern near the edge, but its influence fades on going away from the edge. It follows that different textures of the aromaticity pattern appear near different edges. As a result, the entire aromaticity pattern does not always match with a single Clar formula or a single weighted superposed Clar formula. Such an unusual feature of aromaticity patterns could not have been observed distinctly if we had not explored the aromaticity patterns of large irregular-shaped PAH molecules systematically. We used the superaromatic stabilization energy (SSE) as a local aromaticity index, which is the only index of this kind not disturbed by the aromaticity of adjacent benzene rings.

Large-scale nanoelectromechanical switches based on directly deposited nanocrystalline graphene on insulating substrates

The direct growth of graphene on insulating substrate is highly desirable for the commercial scale integration of graphene due to the potential lower cost and better process control. We report a simple, direct deposition of nanocrystalline graphene (NCG) on insulating substrates via catalyst-free plasma-enhanced chemical vapor deposition at relatively low temperature of ∼800 °C. The parametric study of the process conditions that we conducted reveals the deposition mechanism and allows us to grow high quality films. Based on such film, we demonstrate the fabrication of a large-scale array of nanoelectromechanical (NEM) switches using regular thin film process techniques, with no transfer required. Thanks to ultra-low thickness, good uniformity, and high Young's modulus of ∼0.86 TPa, NCG is considered as a promising material for high performance NEM devices. The high performance is highlighted for the NCG switches, e.g. low pull-in voltage <3 V, reversible operations, minimal leakage current of ∼1 pA, and high on/off ratio of ∼10(5).

Graphene Coating of Silicon Nanoparticles with CO2 -Enhanced Chemical Vapor Deposition

Understanding the growth of graphene over Si species is becoming ever more important as the huge potential for the combination of these two materials becomes more apparent, not only for device fabrication but also in energy applications, particularly in Li-ion batteries. Thus, the drive for the direct fabrication of graphene over Si is crucial because indirect approaches, by their very nature, require processing steps that, in general, contaminate, damage, and are costly. In this work, the direct chemical vapor deposition growth of few-layer graphene over Si nanoparticles is systematically explored through experiment and theory with the use of a reducer, H2 or the use of a mild oxidant, CO2 combined with CH4 . Unlike the case of CH4 , with the use of CO2 as a mild oxidant in the reaction, the graphene layers form neatly over the surface and encapsulate the Si particles. SiC formation is also prevented. These structures show exceptionally good electrochemical performance as high capacity anodes for lithium-ion batteries. Density functional theory studies show the presence of CO2 not only prevents SiC formation but helps enhance the catalytic activity of the particles by maintaining an SiOx surface. In addition, CO2 can enhance graphitization.

Construction of 3D nanostructure hierarchical porous graphitic carbons by charge-induced self-assembly and nanocrystal-assisted catalytic graphitization for supercapacitors

A smart and sustainable strategy based on charge-induced self-assembly and nanocrystal-assisted catalytic graphitization is explored for the efficient construction of 3D nanostructure hierarchical porous graphitic carbons from the pectin biopolymer.

A facile method for transparent carbon nanosheets heater based on polyimide

Transparent carbon nanosheet film heaters are fabricated by spin-coating of poly(amic acid) on quartz substrates following by carbonization process. These thin films show the transparency of 55–90% at 550 nm and sheet resistance of 14.7 to 1.6 kΩ sq⁻¹.

The evolution of hierarchical porosity in self-templated nitrogen-doped carbons and its effect on oxygen reduction electrocatalysis

Pyrolitic self-templating synthesis is an effective method for creating hierarchically porous N-doped carbons.

Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers

Chemical vapor deposition (CVD) is a scalable method able to synthesize MoS2 and WS2 monolayers. In this work, we reduced the synthesis temperature by 200 °C only by introducing tellurium (Te) into the CVD process. The as-synthesized MoS2 and WS2 monolayers show high phase purity and crystallinity. The optical and electrical performance of these materials is comparable to those synthesized at higher temperatures. We believe this work will accelerate the industrial synthesis of these semiconducting monolayers.

A Simple Synthesis of an N-Doped Carbon ORR Catalyst: Hierarchical Micro/Meso/Macro Porosity and Graphitic Shells

Replacing platinum as an oxygen reduction catalyst is an important scientific and technological challenge. Herein we report a simple synthesis of a complex carbon with very good oxygen reduction reaction (ORR) activity at pH 13. Pyrolysis of magnesium nitrilotriacetate yields a carbon with hierarchical micro/meso/macro porosity, resulting from in situ templating by spontaneously forming MgO nanoparticles and from etching by pyrolysis gases. The mesopores are lined with highly graphitic shells. The high ORR activity is attributed to a good balance between high specific surface area and mass transport through the hierarchical porosity, and to improved electronic conductivity through the graphitic shells. This novel carbon has a high surface area (1320 m(2) g(-1) ), and high nitrogen content for a single precursor synthesis (∼6 %). Importantly, its synthesis is both cheap and easily scalable.

Growth, Quantitative Growth Analysis, and Applications of Graphene on γ-Al2O3 catalysts

The possibilities offered by catalytic γ-Al2O3 substrates are explored, and the mechanism governing graphene formation thereon is elucidated using both numerical simulations and experiments. The growth scheme offers metal-free synthesis at low temperature, grain-size customization, large-area uniformity of electrical properties, single-step preparation of graphene/dielectric structures, and readily detachable graphene. We quantify based on thermodynamic principles the activation energies associated with graphene nucleation/growth on γ-Al2O3, verifying the low physical and chemical barriers. Importantly, we derive a universal equation governing the adsorption-based synthesis of graphene over a wide range of temperatures in both catalytic and spontaneous growth regimes. Experimental results support the equation, highlighting the catalytic function of γ-Al2O3 at low temperatures. The synthesized graphene is manually incorporated as a 'graphene sticker' into an ultrafast mode-locked laser.

Direct growth of ultrafast transparent single-layer graphene defoggers

The idea flat surface, superb thermal conductivity and excellent optical transmittance of single-layer graphene promise tremendous potential for graphene as a material for transparent defoggers. However, the resistance of defoggers made from conventional transferred graphene increases sharply once both sides of the film are covered by water molecules which, in turn, leads to a temperature drop that is inefficient for fog removal. Here, the direct growth of large-area and continuous graphene films on quartz is reported, and the first practical single-layer graphene defogger is fabricated. The advantages of this single-layer graphene defogger lie in its ultrafast defogging time for relatively low input voltages and excellent defogging robustness. It can completely remove fog within 6 s when supplied a safe voltage of 32 V. No visible changes in the full defogging time after 50 defogging cycles are observed. This outstanding performance is attributed to the strong interaction forces between the graphene films and the substrates, which prevents the permeation of water molecules. These directly grown transparent graphene defoggers are expected to have excellent prospects in various applications such as anti-fog glasses, auto window and mirror defogging.

Copper nanowire-graphene core-shell nanostructure for highly stable transparent conducting electrodes

A copper nanowire-graphene (CuNW-G) core-shell nanostructure was successfully synthesized using a low-temperature plasma-enhanced chemical vapor deposition process at temperatures as low as 400 °C for the first time. The CuNW-G core-shell nanostructure was systematically characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, Raman, and X-ray photoelectron spectroscopy measurements. A transparent conducting electrode (TCE) based on the CuNW-G core-shell nanostructure exhibited excellent optical and electrical properties compared to a conventional indium tin oxide TCE. Moreover, it showed remarkable thermal oxidation and chemical stability because of the tight encapsulation of the CuNW with gas-impermeable graphene shells. The potential suitability of CuNW-G TCE was demonstrated by fabricating bulk heterojunction polymer solar cells. We anticipate that the CuNW-G core-shell nanostructure can be used as an alternative to conventional TCE materials for emerging optoelectronic devices such as flexible solar cells, displays, and touch panels.

Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems

We present the science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems, targeting an evolution in technology, that might lead to impacts and benefits reaching into most areas of society. This roadmap was developed within the framework of the European Graphene Flagship and outlines the main targets and research areas as best understood at the start of this ambitious project. We provide an overview of the key aspects of graphene and related materials (GRMs), ranging from fundamental research challenges to a variety of applications in a large number of sectors, highlighting the steps necessary to take GRMs from a state of raw potential to a point where they might revolutionize multiple industries. We also define an extensive list of acronyms in an effort to standardize the nomenclature in this emerging field.

Comparing graphene growth on Cu(111) versus oxidized Cu(111)

The epitaxial growth of graphene on catalytically active metallic surfaces via chemical vapor deposition (CVD) is known to be one of the most reliable routes toward high-quality large-area graphene. This CVD-grown graphene is generally coupled to its metallic support resulting in a modification of its intrinsic properties. Growth on oxides is a promising alternative that might lead to a decoupled graphene layer. Here, we compare graphene on a pure metallic to graphene on an oxidized copper surface in both cases grown by a single step CVD process under similar conditions. Remarkably, the growth on copper oxide, a high-k dielectric material, preserves the intrinsic properties of graphene; it is not doped and a linear dispersion is observed close to the Fermi energy. Density functional theory calculations give additional insight into the reaction processes and help explaining the catalytic activity of the copper oxide surface.

Large-scale and patternable graphene: direct transformation of amorphous carbon film into graphene/graphite on insulators via Cu mediation engineering and its application to all-carbon based devices

Chemical vapour deposition of graphene was the preferred way to synthesize graphene for multiple applications. However, several problems related to transfer processes, such as wrinkles, cleanness and scratches, have limited its application at the industrial scale. Intense research was triggered into developing alternative synthesis methods to directly deposit graphene on insulators at low cost with high uniformity and large area. In this work, we demonstrate a new concept to directly achieve growth of graphene on non-metal substrates. By exposing an amorphous carbon (a-C) film in Cu gaseous molecules after annealing at 850 °C, the carbon (a-C) film surprisingly undergoes a noticeable transformation to crystalline graphene. Furthermore, the thickness of graphene could be controlled, depending on the thickness of the pre-deposited a-C film. The transformation mechanism was investigated and explained in detail. This approach enables development of a one-step process to fabricate electrical devices made of all carbon material, highlighting the uniqueness of the novel approach for developing graphene electronic devices. Interestingly, the carbon electrodes made directly on the graphene layer by our approach offer a good ohmic contact compared with the Schottky barriers usually observed on graphene devices using metals as electrodes.

Direct synthesis of graphene from adsorbed organic solvent molecules over copper

We show the direct synthesis of graphene from adsorbed organic solvent molecules over copper by annealing in hydrogen.

Structural design of graphene for use in electrochemical energy storage devices

This review elucidates the structural design methodologies toward high-performance graphene-based electrode materials for electrochemical energy storage devices.

Electronics based on two-dimensional materials

The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.

Direct growth of patterned graphene on SiO2 substrates without the use of catalysts or lithography

We demonstrate a one-step fabrication of patterned graphene on SiO2 substrates through a process free from catalysts, transfer, and lithography. By simply placing a shadow mask during the plasma enhanced chemical vapor deposition (PECVD) of graphene, an arbitrary shape of graphene can be obtained on SiO2 substrate. The formation of graphene underneath the shadow mask was effectively prevented by the low-temperature, catalyst-free process. Growth conditions were optimized to form polycrystalline graphene on SiO2 substrates and the crystalline structure was characterized by Raman spectroscopy and transmission electron microscopy (TEM). Patterned graphene on SiO2 functions as a field-effect device by itself. Our method is compatible with present device processing techniques, and should be highly desirable for the proliferation of graphene applications.

Catalytic transparency of hexagonal boron nitride on copper for chemical vapor deposition growth of large-area and high-quality graphene

Graphene transferred onto h-BN has recently become a focus of research because of its excellent compatibility with large-area device applications. The requirements of scalability and clean fabrication, however, have not yet been satisfactorily addressed. The successful synthesis of graphene/h-BN on a Cu foil and DFT calculations for this system are reported, which demonstrate that a thin h-BN film on Cu foil is an excellent template for the growth of large-area and high-quality graphene. Such material can be grown on thin h-BN films that are less than 3 nm thick, as confirmed by optical microscopy and Raman spectroscopy. We have evaluated the catalytic growth mechanism and the limits on the CVD growth of high-quality and large-area graphene on h-BN film/Cu by performing Kelvin probe force microscopy and DFT calculations for various thicknesses of h-BN.

Nitrogen-doped graphene/carbon nanotube hybrids: in situ formation on bifunctional catalysts and their superior electrocatalytic activity for oxygen evolution/reduction reaction

There is a growing interest in oxygen electrode catalysts for oxygen reduction reaction (ORR) and oxygen evolution reaction (OER), as they play a key role in a wide range of renewable energy technologies such as fuel cells, metal-air batteries, and water splitting. Nevertheless, the development of highly-active bifunctional catalysts at low cost for both ORR and OER still remains a huge challenge. Herein, we report a new N-doped graphene/single-walled carbon nanotube (SWCNT) hybrid (NGSH) material as an efficient noble-metal-free bifunctional electrocatalyst for both ORR and OER. NGSHs were fabricated by in situ doping during chemical vapor deposition growth on layered double hydroxide derived bifunctional catalysts. Our one-step approach not only provides simultaneous growth of graphene and SWCNTs, leading to the formation of three dimensional interconnected network, but also brings the intrinsic dispersion of graphene and carbon nanotubes and the dispersion of N-containing functional groups within a highly conductive scaffold. Thus, the NGSHs possess a large specific surface area of 812.9 m(2) g(-1) and high electrical conductivity of 53.8 S cm(-1) . Despite of relatively low nitrogen content (0.53 at%), the NGSHs demonstrate a high ORR activity, much superior to two constituent components and even comparable to the commercial 20 wt% Pt/C catalysts with much better durability and resistance to crossover effect. The same hybrid material also presents high catalytic activity towards OER, rendering them high-performance cheap catalysts for both ORR and OER. Our result opens up new avenues for energy conversion technologies based on earth-abundant, scalable, noble-metal-free catalysts.

Direct growth of self-crystallized graphene and graphite nanoballs with Ni vapor-assisted growth: from controllable growth to material characterization

A directly self-crystallized graphene layer with transfer-free process on arbitrary insulator by Ni vapor-assisted growth at growth temperatures between 950 to 1100 °C via conventional chemical vapor deposition (CVD) system was developed and demonstrated. Domain sizes of graphene were confirmed by Raman spectra from ~12 nm at growth temperature of 1000 °C to ~32 nm at growth temperature of 1100 °C, respectively. Furthermore, the thickness of the graphene is controllable, depending on deposition time and growth temperature. By increasing growth pressure, the growth of graphite nano-balls was preferred rather than graphene growth. The detailed formation mechanisms of graphene and graphite nanoballs were proposed and investigated in detail. Optical and electrical properties of graphene layer were measured. The direct growth of the carbon-based materials with free of the transfer process provides a promising application at nanoelectronics.

Direct growth of graphene on quartz substrates for label-free detection of adenosine triphosphate

We demonstrate that continuous, uniform graphene films can be directly synthesized on quartz substrates using a two-temperature-zone chemical vapor deposition system and that their layers can be controlled by adjusting the precursor partial pressure. Raman spectroscopy and transmission electron microscopy confirm the formation of monolayer graphene with a grain size of ∼100 nm. Hall measurements show a room-temperature carrier mobility above 1500 cm2 V(-1) s(-1). The optical transmittance and conductance of the graphene films are comparable to those of transferred metal-catalyzed graphene. The method avoids the complicated and skilled post-growth transfer process and allows the graphene to be directly incorporated into a fully functional biosensor for label-free detection of adenosine triphosphate (ATP). This device shows a fast response time of a few milliseconds and achieves a high sensitivity to ATP molecules over a very wide range from 0.002 to 5 mM.

Direct growth of high-quality graphene on high-κ dielectric SrTiO₃ substrates

High-quality monolayer graphene was synthesized on high-κ dielectric single crystal SrTiO3 (STO) substrates by a facile metal-catalyst-free chemical vapor deposition process. The as-grown graphene sample was suitable for fabricating a high performance field-effect transistor (FET), followed by a far lower operation voltage compared to that of a SiO2-gated FET and carrier motilities of approximately 870-1050 cm(2)·V(-1)·s(-1) in air at rt. The directly grown high-quality graphene on STO makes it a perfect candidate for designing transfer-free, energy-saving, and batch production of FET arrays.

Direct integration of polycrystalline graphene into light emitting diodes by plasma-assisted metal-catalyst-free synthesis

The integration of graphene into devices is a challenging task because the preparation of a graphene-based device usually includes graphene growth on a metal surface at elevated temperatures (∼1000 °C) and a complicated postgrowth transfer process of graphene from the metal catalyst. Here we report a direct integration approach for incorporating polycrystalline graphene into light emitting diodes (LEDs) at low temperature by plasma-assisted metal-catalyst-free synthesis. Thermal degradation of the active layer in LEDs is negligible at our growth temperature, and LEDs could be fabricated without a transfer process. Moreover, in situ ohmic contact formation is observed between DG and p-GaN resulting from carbon diffusion into the p-GaN surface during the growth process. As a result, the contact resistance is reduced and the electrical properties of directly integrated LEDs outperform those of LEDs with transferred graphene electrodes. This relatively simple method of graphene integration will be easily adoptable in the industrialization of graphene-based devices.

A universal transfer route for graphene

Often synthetic graphene requires transfer onto an arbitrary substrate prior to use because the substrate it was originally synthesized on is inappropriate for either electrical measurement or characterization. While a variety of routes have been developed they are substrate dependant and often involve the use of harsh treatments. Here we present a facile and cheap route that can be applied to graphene over any substrate. This universal transfer route is based on a wet chemical reaction producing gaseous species which can intercalate between the substrate and the graphene and thus gently delaminate the two.

Few-layer graphene shells and nonmagnetic encapsulates: a versatile and nontoxic carbon nanomaterial

In this work a simple and scalable approach to coat nonmagnetic nanoparticles with few-layer graphene is presented. In addition, the easy processing of such nanoparticles to remove their core, leaving only the 3D graphene nanoshell, is demonstrated. The samples are comprehensively characterized, as are their versatility in terms of functionalization and as a material for electrochemical storage. Indeed, these 3D graphene nanostructures are easily functionalized much as is found with carbon nanotubes and planar graphene. Electrochemical investigations indicate these nanostructures are promising for stable long-life battery applications. Finally, initial toxicological investigations suggest no acute health risk from these 3D graphene nanostructures.

Copper-vapor-assisted chemical vapor deposition for high-quality and metal-free single-layer graphene on amorphous SiO2 substrate

We report that high-quality single-layer graphene (SLG) has been successfully synthesized directly on various dielectric substrates including amorphous SiO2/Si by a Cu-vapor-assisted chemical vapor deposition (CVD) process. The Cu vapors produced by the sublimation of Cu foil that is suspended above target substrates without physical contact catalyze the pyrolysis of methane gas and assist nucleation of graphene on the substrates. Raman spectra and mapping images reveal that the graphene formed on a SiO2/Si substrate is almost defect-free and homogeneous single layer. The overall quality of graphene grown by Cu-vapor-assisted CVD is comparable to that of the graphene grown by regular metal-catalyzed CVD on a Cu foil. While Cu vapor induces the nucleation and growth of SLG on an amorphous substrate, the resulting SLG is confirmed to be Cu-free by synchrotron X-ray photoelectron spectroscopy. The SLG grown by Cu-vapor-assisted CVD is fabricated into field effect transistor devices without transfer steps that are generally required when SLG is grown by regular CVD process on metal catalyst substrates. This method has overcome two important hurdles previously present when the catalyst-free CVD process is used for the growth of SLG on fused quartz and hexagonal boron nitride substrates, that is, high degree of structural defects and limited size of resulting graphene, respectively.

Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates

By using two-stage, metal-catalyst-free chemical vapor deposition (CVD), it is demonstrated that high-quality polycrystalline graphene films can directly grow on silicon nitride substrates. The carrier mobility can reach about 1500 cm(2) V(-1) s(-1) , which is about three times the value of those grown on SiO(2) /Si substrates, and also is better than some examples of metal-catalyzed graphene, reflecting the good quality of the graphene lattice.

Understanding the catalyst-free transformation of amorphous carbon into graphene by current-induced annealing

We shed light on the catalyst-free growth of graphene from amorphous carbon (a–C) by current-induced annealing by witnessing the mechanism both with in-situ transmission electron microscopy and with molecular dynamics simulations. Both in experiment and in simulation, we observe that small a–C clusters on top of a graphene substrate rearrange and crystallize into graphene patches. The process is aided by the high temperatures involved and by the van der Waals interactions with the substrate. Furthermore, in the presence of a–C, graphene can grow from the borders of holes and form a seamless graphene sheet, a novel finding that has not been reported before and that is reproduced by the simulations as well. These findings open up new avenues for bottom-up engineering of graphene-based devices.

van der Waals epitaxial growth of graphene on sapphire by chemical vapor deposition without a metal catalyst

van der Waals epitaxial growth of graphene on c-plane (0001) sapphire by CVD without a metal catalyst is presented. The effects of CH(4) partial pressure, growth temperature, and H(2)/CH(4) ratio were investigated and growth conditions optimized. The formation of monolayer graphene was shown by Raman spectroscopy, optical transmission, grazing incidence X-ray diffraction (GIXRD), and low voltage transmission electron microscopy (LVTEM). Electrical analysis revealed that a room temperature Hall mobility above 2000 cm(2)/V·s was achieved, and the mobility and carrier type were correlated to growth conditions. Both GIXRD and LVTEM studies confirm a dominant crystal orientation (principally graphene [10-10] || sapphire [11-20]) for about 80-90% of the material concomitant with epitaxial growth. The initial phase of the nucleation and the lateral growth from the nucleation seeds were observed using atomic force microscopy. The initial nuclei density was ~24 μm(-2), and a lateral growth rate of ~82 nm/min was determined. Density functional theory calculations reveal that the binding between graphene and sapphire is dominated by weak dispersion interactions and indicate that the epitaxial relation as observed by GIXRD is due to preferential binding of small molecules on sapphire during early stages of graphene formation.

Graphene/single-walled carbon nanotube hybrids: one-step catalytic growth and applications for high-rate Li-S batteries

The theoretically proposed graphene/single-walled carbon nanotube (G/SWCNT) hybrids by placing SWCNTs among graphene planes through covalent C-C bonding are expected to have extraordinary physical properties and promising engineering applications. However, the G/CNT hybrids that have been fabricated differ greatly from the proposed G/SWCNT hybrids because either the covalent C-C bonding is not well constructed or only multiwalled CNTs/carbon nanofibers rather than SWCNTs are available in the hybrids. Herein, a novel G/SWCNT hybrid was successfully fabricated by a facile catalytic growth on layered double hydroxide (LDH) at a high temperature over 950 °C. The thermally stable Fe nanoparticles and the uniform structure of the calcined LDH flakes are essential for the simultaneously catalytic deposition of SWCNTs and graphene. The SWCNTs and the CVD-grown graphene, as well as the robust connection between the SWCNTs and graphene, facilitated the construction of a high electrical conductive pathway. The internal spaces between the two stacked graphene layers and among SWCNTs offer room for sulfur storage. Therefore, the as obtained G/SWCNT-S cathode exhibited excellent performance in Li-S batteries with a capacity as high as 650 mAh g(-1) after 100 cycles even at a high current rate of 5 C. Such a novel G/SWCNT hybrid can serve not only as a prototype to shed light on the chemical principle of G/CNT synthesis but also as a platform for their further applications in the area of nanocomposites, heterogeneous catalysis, drug delivery, electrochemical energy storage, and so on.