A universal, rapid method for clean transfer of nanostructures onto various substrates

A Double Support Layer for Facile Clean Transfer of Two-Dimensional Materials for High-Performance Electronic and Optoelectronic Devices

Clean transfer of two-dimensional (2D) materials grown by chemical vapor deposition is critical for their application in electronics and optoelectronics. Although rosin can be used as a support layer for the clean transfer of graphene grown on Cu, it has not been usable for the transfer of 2D materials grown on noble metals or for large-area transfer. Here, we report a poly(methyl methacrylate) (PMMA)/rosin double support layer that enables facile ultraclean transfer of large-area 2D materials grown on different metals. The bottom rosin layer ensures clean transfer, whereas the top PMMA layer not only screens the rosin from the transfer conditions but also improves the strength of the transfer layer to make the transfer easier and more robust. We demonstrate the transfer of monolayer WSe₂ and WS₂ single crystals grown on Au as well as large-area graphene films grown on Cu. As a result of the clean surface, the transferred WSe₂ retains the intrinsic optical properties of the as-grown sample. Moreover, it does not require annealing to form good ohmic contacts with metal electrodes, enabling high-performance field effect transistors with mobility and ON/OFF ratio ∼10 times higher than those made by PMMA-transferred WSe₂. The ultraclean graphene film is found to be a good anode for flexible organic photovoltaic cells with a high power conversion efficiency of ∼6.4% achieved.

Interlayer Difference of Bilayer-Stacked MoS2 Structure: Probing by Photoluminescence and Raman Spectroscopy

This work reports the interlayer difference of exciton and phonon performance between the top and bottom layer of a bilayer-stacked two-dimensional materials structure (BSS). Through photoluminescence (PL) and Raman spectroscopy, we find that, compared to that of the bottom layer, the top layer of BSS demonstrates PL redshift, Raman E 2 g 1 mode redshift, and lower PL intensity. Spatial inhomogeneity of PL and Raman are also observed in the BSS. Based on theoretical analysis, these exotic effects can be attributed to substrate-coupling-induced strain and doping. Our findings provide pertinent insight into film-substrate interaction, and are of great significance to researches on bilayer-stacked structures including twisted bilayer structure, Van der Waals hetero- and homo-structure.

Impact of pH on Regulating Ion Encapsulation of Graphene Oxide Nanoscroll for Pressure Sensing

Recently, graphene oxide nanoscroll (GONS) has attracted much attention due to its excellent properties. Encapsulation of nanomaterials in GONS can greatly enhance its performance while ion encapsulation is still unexplored. Herein, various ions including hydronium ion (H₃O⁺), Fe³⁺, Au³⁺, and Zn²⁺ were encapsulated in GONSs by molecular combing acidic graphene oxide (GO) solution. No GONS was obtained when the pH of the GO solution was greater than 9. A few GONSs without encapsulated ion were obtained at the pH of 5–8. When the pH decreased from 5 to 0.15, high-density GONSs with encapsulated ions were formed and the average height of GONS was increased from ~50 to ~190 nm. These results could be attributed to the varied repulsion between carboxylic acid groups located at the edges of GO nanosheets. Encapsulated metal ions were converted to nanoparticles in GONS after high-temperature annealing. The resistance-type device based on reduced GONS (rGONS) mesh with encapsulated H₃O⁺ showed good response for applied pressure from 600 to 8700 Pa, which manifested much better performance compared with that of a device based on rGONS mesh without H₃O⁺.

Fabrication and practical applications of molybdenum disulfide nanopores

Among the different developed solid-state nanopores, nanopores constructed in a monolayer of molybdenum disulfide (MoS₂) stand out as powerful devices for single-molecule analysis or osmotic power generation. Because the ionic current through a nanopore is inversely proportional to the thickness of the pore, ultrathin membranes have the advantage of providing relatively high ionic currents at very small pore sizes. This increases the signal generated during translocation of biomolecules and improves the nanopores' efficiency when used for desalination or reverse electrodialysis applications. The atomic thickness of MoS₂ nanopores approaches the inter-base distance of DNA, creating a potential candidate for DNA sequencing. In terms of geometry, MoS₂ nanopores have a well-defined vertical profile due to their atomic thickness, which eliminates any unwanted effects associated with uneven pore profiles observed in other materials. This protocol details all the necessary procedures for the fabrication of solid-state devices. We discuss different methods for transfer of monolayer MoS₂, different approaches for the creation of nanopores, their applicability in detecting DNA translocations and the analysis of translocation data through open-source programming packages. We present anticipated results through the application of our nanopores in DNA translocations and osmotic power generation. The procedure comprises four parts: fabrication of devices (2-3 d), transfer of MoS₂ and cleaning procedure (24 h), the creation of nanopores within MoS₂ (30 min) and performing DNA translocations (2-3 h). We anticipate that our protocol will enable large-scale manufacturing of single-molecule-analysis devices as well as next-generation DNA sequencing.

MoS2 Liquid Cell Electron Microscopy Through Clean and Fast Polymer-Free MoS2 Transfer

Two dimensional (2D) materials have found various applications because of their unique physical properties. For example, graphene has been used as the electron transparent membrane for liquid cell transmission electron microscopy (TEM) due to its high mechanical strength and flexibility, single-atom thickness, chemical inertness, etc. Here, we report using 2D MoS₂ as a functional substrate as well as the membrane window for liquid cell TEM, which is enabled by our facile and polymer-free MoS₂ transfer process. This provides the opportunity to investigate the growth of Pt nanocrystals on MoS₂ substrates, which elucidates the formation mechanisms of such heterostructured 2D materials. We find that Pt nanocrystals formed in MoS₂ liquid cells have a strong tendency to align their crystal lattice with that of MoS₂, suggesting a van der Waals epitaxial relationship. Importantly, we can study its impact on the kinetics of the nanocrystal formation. The development of MoS₂ liquid cells will allow further study of various liquid phenomena on MoS₂, and the polymer-free MoS₂ transfer process will be implemented in a wide range of applications.

Strategy for Fabricating Wafer-Scale Platinum Disulfide

PtS₂ is a newly developed group 10 2D layered material with high carrier mobility, wide band gap tunability, strongly bound excitons, symmetrical metallic and magnetic edge states, and ambient stability, making it attractive in nanoelectronic, optoelectronic, and spintronic fields. To the aim of application, a large-scale synthesis is necessary. For transition-metal dichalcogenide (TMD) compounds, a thermally assisted conversion method has been widely used to fabricate wafer-scale thin films. However, PtS₂ cannot be easily synthesized using the method, as the tetragonal PtS phase is more stable. Here, we use a specified quartz part to locally increase the vapor pressure of sulfur in a chemical vapor deposition furnace and successfully extend this method for the synthesis of PtS₂ thin films in a scalable and controllable manner. Moreover, the PtS and PtS₂ phases can be interchangeably converted through a proposed strategy. Field-effect transistor characterization and photocurrent measurements suggest that PtS₂ is an ambipolar semiconductor with a narrow band gap. Moreover, PtS₂ also shows excellent gas-sensing performance with a detection limit of ∼0.4 ppb for NO₂. Our work presents a relatively simple way of synthesizing PtS₂ thin films and demonstrates their promise for high-performance ultrasensitive gas sensing, broadband optoelectronics, and nanoelectronics in a scalable manner. Furthermore, the proposed strategy is applicable for making other PtX₂ compounds and TMDs which are compatible with modern silicon technologies.

Ultrasensitive and Stable Plasmonic Surface-Enhanced Raman Scattering Substrates Covered with Atomically Thin Monolayers: Effect of the Insulating Property

We demonstrated the effects of monolayer graphene and hexagonal boron nitride (h-BN) on the stability and detection performance of two types of substrates in surface-enhanced Raman scattering (SERS): a two-dimensional (2D) monolayer/Ag nanoparticle (NP) substrate and a Au NP/2D monolayer/Ag NP substrate. Graphene and h-BN, which have different electrical and chemical properties, were introduced in close contact with the metal NPs and had distinctly different effects on the plasmonic near-field interactions between metal NPs in the subnanometer-scale gap and on the electron transport behavior. A quantitative comparison was possible due to reproducible SERS signals across the entire substrates prepared by simple and inexpensive fabrication methods. The hybrid platform, an insulating h-BN monolayer covering the Ag NP substrate, ensured the long-term oxidative stability for over 80 days, which was superior to the stability achieved using conducting graphene. Additionally, a sandwich structure using an h-BN monolayer exhibited excellent SERS sensitivity with a detection limit for rhodamine 6G as low as 10^-12 M; to the best of our knowledge, this is the best SERS detection limit achieved using monolayer h-BN as a gap-control material. In this study, we suggest an efficient strategy for hybridizing the desired 2D layers with metal nanostructures for SERS applications, where the substrate stability and electromagnetic field enhancement are particularly crucial for the various applications that utilize metal/2D hybrid structures.

Direct electron-beam patterning of transferrable plasmonic gold nanoparticles using a HAuCl4/PVP composite resist

Reliable fabrication of gold nanoparticles with desirable size, geometry and spatial arrangement is essential for plasmonic applications. A common fabrication flow usually involves electron-beam lithography and a vacuum-evaporation-based lift-off process or etching. In this work, we evaluate an alternative approach to directly fabricate a plasmonic gold nanoparticle array without involving the vacuum evaporation process by using a chloroauric acid/poly(vinyl pyrrolidone) (HAuCl4/PVP) hybrid as a functional electron-beam resist. Systematic experiments were conducted to investigate the patterning behaviors in the fabrication process. With the optimized fabrication parameters, we show that the HAuCl4/PVP composite resist has a high patterning resolution and pure gold nanoparticles with tens of nanometers can be obtained after an annealing-based pyrolysis process. More particularly, compared to the patterned plasmonic gold nanoparticles obtained by conventional methods, the gold nanoparticles fabricated by our method can be transferred to soft substrates due to the absence of an adhesion layer, enabling various potential applications in flexible and stretchable optics. As an example, we demonstrated that the transferred gold nanoparticle array can be conformably assembled onto a flat gold surface to form a particle-on-film structure for surface-enhanced Raman scattering (SERS) applications.

Low-Dimensional Materials and State-of-the-Art Architectures for Infrared Photodetection

Infrared photodetectors are gaining remarkable interest due to their widespread civil and military applications. Low-dimensional materials such as quantum dots, nanowires, and two-dimensional nanolayers are extensively employed for detecting ultraviolet to infrared lights. Moreover, in conjunction with plasmonic nanostructures and plasmonic waveguides, they exhibit appealing performance for practical applications, including sub-wavelength photon confinement, high response time, and functionalities. In this review, we have discussed recent advances and challenges in the prospective infrared photodetectors fabricated by low-dimensional nanostructured materials. In general, this review systematically summarizes the state-of-the-art device architectures, major developments, and future trends in infrared photodetection.

Fabrication of Strain Gauges via Contact Printing: A Simple Route to Healthcare Sensors Based on Cross-Linked Gold Nanoparticles

In this study, we developed a novel and efficient process for the fabrication of resistive strain gauges for healthcare-related applications. First, 1,9-nonanedithiol cross-linked gold nanoparticle (GNP) films were prepared via layer-by-layer (LbL) spin-coating and subsequently transferred onto flexible polyimide foil by contact printing. Four-point bending tests revealed linear response characteristics with gauge factors of ∼14 for 4 nm GNPs and ∼26 for 7 nm GNPs. This dependency of strain sensitivity is attributed to the perturbation of charge carrier tunneling between neighboring GNPs, which becomes more efficient with increasing particle size. Fatigue tests revealed that the strain-resistance performance remained nearly the same after 10.000 strain/relaxation cycles. We demonstrate that these sensors are well suited to monitor muscle movements. Furthermore, we fabricated all-printed strain sensors by directly transferring cross-linked GNP films onto soft PDMS sheets equipped with interdigitated electrodes. Due to the low elastic modulus of poly(dimethylsiloxane) (PDMS), these sensors are easily deformed and, therefore, they respond sensitively to faint forces. When taped onto the skin above the radial artery, they enable the well-resolved and robust recording of pulse waves with diagnostically relevant details.

Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe2 monolayer

In this work, we study growth and migration of atomic defects in MoSe₂ on graphene using multiple advanced transmission electron microscopy techniques to explore defect behavior in vdW heterostructures. A MoSe₂/graphene vdW heterostructure is prepared by a direct growth of both monolayers, thereby attaining an ideal vdW interface between the monolayers. We investigate the intrinsic defects (inversion domains and grain boundaries) in synthesized MoSe₂, their evolution amid growth processing steps, and their influence on the formation and movement of extrinsic defects. Electron diffraction identifies a preferential interlayer orientation of 2° between MoSe₂ and graphene, which is caused by the presence of intrinsic IBD defects. Extrinsic defects (point and line defects) are generated by in situ electron irradiation in the MoSe₂ layer. Our results shed light on how to independently modify the MoSe₂ atomic structure in vdW heterostructures for potential utilization in device processing.

Interface Characterization and Control of 2D Materials and Heterostructures

2D materials and heterostructures have attracted significant attention for a variety of nanoelectronic and optoelectronic applications. At the atomically thin limit, the material characteristics and functionalities are dominated by surface chemistry and interface coupling. Therefore, methods for comprehensively characterizing and precisely controlling surfaces and interfaces are required to realize the full technological potential of 2D materials. Here, the surface and interface properties that govern the performance of 2D materials are introduced. Then the experimental approaches that resolve surface and interface phenomena down to the atomic scale, as well as strategies that allow tuning and optimization of interfacial interactions in van der Waals heterostructures, are systematically reviewed. Finally, a future outlook that delineates the remaining challenges and opportunities for 2D material interface characterization and control is presented.

Water-Assisted Transfer Patterning of Nanomaterials

We introduce a straightforward and cost-effective water-assisted approach to transfer patterns of nanomaterials onto diverse substrates. The transfer method relies on the hydrophobic effect and utilizes a water-soluble polymer film as a carrier to transfer hydrophobic nanomaterials from a patterned source substrate onto a target substrate. Using this approach, nanomaterials are transferred readily from solutions onto surfaces of various shapes and compositions with high fidelity for feature sizes approaching 10 microns.

Atomic-scale defects and electronic properties of a transferred synthesized MoS2 monolayer

MoS₂ monolayer samples were synthesized on a SiO₂/Si wafer and transferred to Ir(111) for nano-scale characterization. The samples were extensively characterized during every step of the transfer process, and MoS₂ on the final substrate was examined down to the atomic level by scanning tunneling microscopy (STM). The procedures conducted yielded high-quality monolayer MoS₂ of milimeter-scale size with an average defect density of 2 × 10¹³ cm^-2. The lift-off from the growth substrate was followed by a release of the tensile strain, visible in a widening of the optical band gap measured by photoluminescence. Subsequent transfer to the Ir(111) surface led to a strong drop of this optical signal but without further shifts of characteristic peaks. The electronic band gap was measured by scanning tunneling spectroscopy (STS), revealing n-doping and lateral nano-scale variations. The combined use of STM imaging and density functional theory (DFT) calculations allows us to identify the most recurring point-like defects as S vacancies.

Directed Chemical Assembly of Single and Clustered Nanoparticles with Silanized Templates

The assembly of nanoscale materials into arbitrary, organized structures remains a major challenge in nanotechnology. Herein, we report a general method for creating 2D structures by combining top-down lithography with bottom-up chemical assembly. Under optimal conditions, the assembly of gold nanoparticles was achieved in less than 30 min. Single gold nanoparticles, from 10 to 100 nm, can be placed in predetermined patterns with high fidelity, and higher-order structures can be generated consisting of dimers or trimers. It is shown that the nanoparticle arrays can be transferred to, and embedded within, polymer films. This provides a new method for the large-scale fabrication of nanoparticle arrays onto diverse substrates using wet chemistry.

Gas adsorbates are Coulomb scatterers, rather than neutral ones, in a monolayer MoS2 field effect transistor

Direct current (DC) and low-frequency (LF) noise analyses of a chemical vapor deposition (CVD)-grown monolayer MoS2 field effect transistor (FET) indicate that time-varying carrier perturbations originate from gas adsorbates. The LF noise analysis supports that the natural desorption of physisorbed gas molecules, water and oxygen, largely reduces the interface trap density (NST) under vacuum conditions (∼10-8 Torr) for 2 weeks. After a longer period of 8 months under vacuum, the carrier scattering mechanism alters, in particular for the low carrier density (Nacc) region. A decrease of both NST and the scattering parameter αSC with desorption of surface adsorbates from MoS2, explains the enhanced carrier mobility and the early turn-on of the device. The stabilized carrier behavior is verified with γ = 0.5 in the formula αSC ∝ Nacc-γ, as in Si-MOSFETs. Our results support that the gas adsorbates work as charged impurities, rather than neutral ones.

Nanopatterned High-Frequency Supporting Structures Stably Eliminate Substrate Effects Imposed on Two-Dimensional Semiconductors

Despite the outstanding physical and chemical properties of two-dimensional (2D) materials, due to their extremely thin nature, eliminating detrimental substrate effects such as serious degradation of charge-carrier mobility or light-emission yield remains a major challenge. However, previous approaches have suffered from limitations such as structural instability or the need of costly and high-temperature deposition processes. Herein, we propose a new strategy based on the insertion of high-density topographic nanopatterns as a nanogap-containing supporter between 2D materials and substrate to minimize their contact and to block the substrate-induced undesirable effects. We show that well-controlled high-frequency SiO _x nanopillar structures derived from the self-assembly of Si-containing block copolymer securely prevent the collapse or deformation of transferred MoS₂ and guarantee excellent mechanical stability. The nanogap supporters formed below monolayer MoS₂ lead to dramatic enhancement of the photoluminescence emission intensity (8.7-fold), field-effect mobility (2.0-fold, with a maximum of 4.3-fold), and photoresponsivity (12.1-fold) compared to the sample on flat SiO₂. Similar favorable effects observed for graphene strongly suggest that this simple but powerful nanogap-supporting method can be extensively applicable to a variety of low-dimensional materials and contribute to improved device performance.

Ultrathin Alumina Mask-Assisted Nanopore Patterning on Monolayer MoS2 for Highly Catalytic Efficiency in Hydrogen Evolution Reaction

Nanostructured molybdenum disulfide (MoS₂) has been considered as one of the most promising catalysts in the hydrogen evolution reaction (HER), for its approximately intermediate hydrogen binding free energy to noble metals and much lower cost. The catalytically active sites of MoS₂ are along the edges, whereas thermodynamically MoS₂ favors the presence of a two-dimensional (2-D) basal plane and the catalytically active atoms only constitute a small portion of the material. The lack of catalytically active sites and low catalytic efficiency impede its massive application. To address the issue, we have activated the basal plane of monolayer 2H MoS₂ through an ultrathin alumina mask (UTAM)-assisted nanopore arrays patterning, creating a high edge density. The introduced catalytically active sites are identified by Cu electrochemical deposition, and the hydrogen generation properties are assessed in detail. We demonstrate a remarkably improved HER performance as well as the identical catalysis of the artificial edges and the pristine metallic edges of monolayer MoS₂. Such a porous monolayer nanostructure can achieve a much higher edge atom ratio than the pristine monolayer MoS₂ flakes, which can lead to a much improved catalytic efficiency. This controllable edge engineering can also be extended to the basal plane modifications of other 2-D materials, for improving their edge-related properties.

Solution processing of two-dimensional black phosphorus

Phosphorene, or two-dimensional (2D) black phosphorus (BP) was the first synthetic 2D elemental allotrope beyond graphene to be isolated and studied. It is useful due to its high p-type carrier mobility and direct band gap that is tunable in the range ca. 0.3-2 eV thus bridging the energy gap between graphene and transition metal dichalcogenides such as molybdenum disulfide. Beyond the 'Scotch-Tape' method that was used to isolate the first samples of 2D BP for prototype studies, a range of potentially scalable solution processing techniques emerged later that can produce electronics grade material. This feature article focuses on such solution-process routes to 2D BP and highlights challenges in processing the material, mainly caused by its susceptibility to oxidation, as well as illuminating new avenues and opportunities in the area.

Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials

Designer heterostructures can now be assembled layer-by-layer with unmatched precision thanks to the recently developed deterministic placement methods to transfer two-dimensional (2D) materials. This possibility constitutes the birth of a very active research field on the so-called van der Waals heterostructures. Moreover, these deterministic placement methods also open the door to fabricate complex devices, which would be otherwise very difficult to achieve by conventional bottom-up nanofabrication approaches, and to fabricate fully-encapsulated devices with exquisite electronic properties. The integration of 2D materials with existing technologies such as photonic and superconducting waveguides and fiber optics is another exciting possibility. Here, we review the state-of-the-art of the deterministic placement methods, describing and comparing the different alternative methods available in the literature, and we illustrate their potential to fabricate van der Waals heterostructures, to integrate 2D materials into complex devices and to fabricate artificial bilayer structures where the layers present a user-defined rotational twisting angle.

Two-dimensional transition metal dichalcogenides: interface and defect engineering

This review summarizes the recent advances in understanding the effects of interface and defect engineering on the electronic and optical properties of TMDCs, as well as their applications in advanced (opto)electronic devices.

Na-Cation-Assisted Exfoliation of MX2 (M = Mo, W; X = S, Se) Nanosheets in an Aqueous Medium with the Aid of a Polymeric Surfactant for Flexible Polymer-Nanocomposite Memory Applications

2D nanosheets of transition metal dichalcogenides (TMDCs) have been attracting attention due to their sizable band gap. Facile and effective Na-cation-assisted exfoliation of TMDC (MX₂ , M = Mo, W; X = S, Se) nanosheets in an aqueous medium and their application as a composite filler in a polyvinyl alcohol (PVA) matrix are explored in this work. The presence of Na cations is highly beneficial for exfoliating defect-free and few-layer MX₂ nanosheets in water in the presence of small-sized micelles of polymeric surfactant, and significantly elevates the exfoliation yield by more than one order of magnitude compared to a conventional surfactant-assisted exfoliation. The strategy suggested in this work is very advantageous compared to both Li cation intercalation in organic solvents and conventional low-yield surfactant-assisted exfoliations. As an application of the exfoliated nanosheets, the fabrication of memory devices with the configuration of Ga-doped ZnO/MX₂ -PVA/Ag is demonstrated, and they exhibit bistable and write-once-read-many-times resistive switching behavior with a high ON/OFF current ratio of 3 × 10³ at -1.0 V (for WS₂ ) and 2.0 V (for MoS₂ ). Furthermore, MX₂ -PVA nanocomposite fibrous films and mats are successfully fabricated using an electrospinning technique, which can expand the use of TMDC nanofillers in applications involving highly flexible polymer-based MX₂ composites.

2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection

Two-dimensional materials beyond graphene and TMDs can be promising candidates for wide-spectra photodetection.

Interfacial Interactions in van der Waals Heterostructures of MoS2 and Graphene

Interfacial coupling between neighboring layers of van der Waals heterostructures (vdWHs), formed by vertically stacking more than two types of two-dimensional materials (2DMs), greatly affects their physical properties and device performance. Although high-resolution cross-sectional scanning tunneling electron microscopy can directly image the atomically sharp interfaces in the vdWHs, the interfacial coupling and lattice dynamics of vdWHs formed by two different types of 2DMs, such as semimetal and semiconductor, are not clear so far. Here, we report the ultralow-frequency Raman spectroscopy investigation on interfacial couplings in the vdWHs formed by graphene and MoS₂ flakes. Because of the significant interfacial layer-breathing couplings between MoS₂ and graphene flakes, a series of layer-breathing modes with frequencies dependent on their layer numbers are observed in the vdWHs, which can be described by the linear chain model. It is found that the interfacial layer-breathing force constant between MoS₂ and graphene, α₀^⊥(I) = 60 × 10¹⁸ N/m³, is comparable with the layer-breathing force constant of multilayer MoS₂ and graphene. The results suggest that the interfacial layer-breathing couplings in the vdWHs formed by MoS₂ and graphene flakes are not sensitive to their stacking order and twist angle between the two constituents. Our results demonstrate that the interfacial interlayer coupling in vdWHs formed by two-dimensional semimetals and semiconductors can lead to new lattice vibration modes, which not only can be used to measure the interfacial interactions in vdWHs but also is beneficial to fundamentally understand the properties of vdWHs for further engineering the vdWHs-based electronic and photonic devices.

Capillary-Force-Assisted Clean-Stamp Transfer of Two-Dimensional Materials

A simple and clean method of transferring two-dimensional (2D) materials plays a critical role in the fabrication of 2D electronics, particularly the heterostructure devices based on the artificial vertical stacking of various 2D crystals. Currently, clean transfer techniques rely on sacrificial layers or bulky crystal flakes (e.g., hexagonal boron nitride) to pick up the 2D materials. Here, we develop a capillary-force-assisted clean-stamp technique that uses a thin layer of evaporative liquid (e.g., water) as an instant glue to increase the adhesion energy between 2D crystals and polydimethylsiloxane (PDMS) for the pick-up step. After the liquid evaporates, the adhesion energy decreases, and the 2D crystal can be released. The thin liquid layer is condensed to the PDMS surface from its vapor phase, which ensures the low contamination level on the 2D materials and largely remains their chemical and electrical properties. Using this method, we prepared graphene-based transistors with low charge-neutral concentration (3 × 10¹⁰ cm^-2) and high carrier mobility (up to 48 820 cm² V^-1 s^-1 at room temperature) and heterostructure optoelectronics with high operation speed. Finally, a capillary-force model is developed to explain the experiment.

WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different band alignment

Heterostructure field-effect transistors (hetero-FETs) are experimentally demonstrated, consisting of van der Waals heterostructure channels based on a 2D semiconductor. By optimally selecting the band alignment of the heterostructure channels, different output characteristics of the hetero-FETs were achieved. In atomically thin WSe₂/MoS₂ hetero-FET with staggered energy band, the oscillating transfer characteristic and negative transconductance were realized. With near-broken-gap alignment in the MoTe₂/SnSe₂ heterostructure channel, a superior reverse-biased current was obtained in the hetero-FETs, which can be analyzed as typical tunneling current. Our study on the hetero-FET-based atomically thin van der Waals heterostructure channel, provides significant inspiration and reference to novel heterostructure FETs.

Centimeter-Scale 2D van der Waals Vertical Heterostructures Integrated on Deformable Substrates Enabled by Gold Sacrificial Layer-Assisted Growth

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum or tungsten disulfides (MoS₂ or WS₂) exhibit extremely large in-plane strain limits and unusual optical/electrical properties, offering unprecedented opportunities for flexible electronics/optoelectronics in new form factors. In order for them to be technologically viable building-blocks for such emerging technologies, it is critically demanded to grow/integrate them onto flexible or arbitrary-shaped substrates on a large wafer-scale compatible with the prevailing microelectronics processes. However, conventional approaches to assemble them on such unconventional substrates via mechanical exfoliations or coevaporation chemical growths have been limited to small-area transfers of 2D TMD layers with uncontrolled spatial homogeneity. Moreover, additional processes involving a prolonged exposure to strong chemical etchants have been required for the separation of as-grown 2D layers, which is detrimental to their material properties. Herein, we report a viable strategy to universally combine the centimeter-scale growth of various 2D TMD layers and their direct assemblies on mechanically deformable substrates. By exploring the water-assisted debonding of gold (Au) interfaced with silicon dioxide (SiO₂), we demonstrate the direct growth, transfer, and integration of 2D TMD layers and heterostructures such as 2D MoS₂ and 2D MoS₂/WS₂ vertical stacks on centimeter-scale plastic and metal foil substrates. We identify the dual function of the Au layer as a growth substrate as well as a sacrificial layer which facilitates 2D layer transfer. Furthermore, we demonstrate the versatility of this integration approach by fabricating centimeter-scale 2D MoS₂/single walled carbon nanotube (SWNT) vertical heterojunctions which exhibit current rectification and photoresponse. This study opens a pathway to explore large-scale 2D TMD van der Waals layers as device building blocks for emerging mechanically deformable electronics/optoelectronics.

Flexible Device Applications of 2D Semiconductors

Graphene-like single- or few-layer semiconductors, such as dichalcogenides and buckled nanocrystals, possess direct and tunable bandgaps, and excellent electrical, optical, mechanical and thermal properties. This unique set of desirable properties of 2D semiconductors has triggered great interest in developing ultra-thin 2D flexible electronic devices, which ranges from realizing better material quality and simplified fabrication processes, to improving device performance and expanding the application horizon. The most explored 2D flexible devices based on transition metal dichalcogenides and black phosphorous include field-effect transistors, optoelectronics, electronic sensors and supercapacitors. By taking advantage of a large portfolio of materials and properties of 2D crystals, a new generation of low-cost, high-performance, transparent, flexible and wearable devices looks attractive and promising in advancing flexible electronic technologies.

Transfer printing gold nanoparticle arrays by tuning the surface hydrophilicity of thermo-responsive poly N-isopropylacrylamide (pNIPAAm)

For the transfer of 2-D gold nanoparticle arrays between different substrates, we have developed a new method using thermo-responsive poly-N-isopropylacrylamide (pNIPAAm). By tuning the degree of surface hydrophilicity of pNIPAAm between 5 °C and 50 °C, we demonstrate the transfer of arrays extending over micron-scale areas with preservation of array properties.

Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy

We study the anisotropic electronic properties of two-dimensional (2D) SnS, an analogue of phosphorene, grown by physical vapor transport. With transmission electron microscopy and polarized Raman spectroscopy, we identify the zigzag and armchair directions of the as-grown 2D crystals. The 2D SnS field-effect transistors with a cross-Hall-bar structure are fabricated. They show heavily hole-doped (∼10¹⁹ cm^-3) conductivity with strong in-plane anisotropy. At room temperature, the mobility along the zigzag direction exceeds 20 cm² V^-1 s^-1, which can be up to 1.7 times that in the armchair direction. This strong anisotropy is then explained by the effective mass ratio along the two directions and agrees well with previous theoretical predictions. Temperature-dependent carrier density determined the acceptor energy level to be ∼45 meV above the valence band maximum. This value matches a calculated defect level of 42 meV for Sn vacancies, indicating that Sn deficiency is the main cause of the p-type conductivity.

Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes

The large polymer particle residue generated during the transfer process of graphene grown by chemical vapour deposition is a critical issue that limits its use in large-area thin-film devices such as organic light-emitting diodes. The available lighting areas of the graphene-based organic light-emitting diodes reported so far are usually <1 cm². Here we report a transfer method using rosin as a support layer, whose weak interaction with graphene, good solubility and sufficient strength enable ultraclean and damage-free transfer. The transferred graphene has a low surface roughness with an occasional maximum residue height of about 15 nm and a uniform sheet resistance of 560 Ω per square with about 1% deviation over a large area. Such clean, damage-free graphene has produced the four-inch monolithic flexible graphene-based organic light-emitting diode with a high brightness of about 10,000 cd m⁻² that can already satisfy the requirements for lighting sources and displays.

Ultraclean and damage-free transfer of graphene over large areas is crucial for the future development of flexible electronics and optoelectronics. Using a rosin-assisted method, the authors transfer graphene with an ultraclean surface and uniform small sheet resistance—a 4-inch monolithic organic light-emitting diode is demonstrated.

Room-temperature electrically driven phase transition of two-dimensional 1T-TaS2 layers

Due to the strong electron-electron and electron-phonon interactions, the transition metal dichalcogenide 1T-TaS₂ exhibits temperature dependent as well as electric field driven charge density wave (CDW) phase transitions (PTs). In this work, we investigate the thickness dependence of the electric field driven PT in 1T-TaS₂ two-dimensional (2D) flakes. Electrically driven PT between high- and low-resistance states occurs at temperatures in the range of 60-300 K. For a thin 1T-TaS₂ (≤8.8 nm) sample, only one PT is triggered, whereas thick films experience double PTs (13-17 nm) and multiple PTs (≥17.5 nm) until reaching the final low-resistance state. The multiple PTs may imply the existence of hidden nearly-commensurate charge density wave (NCCDW) states. In addition, a threshold electric field is observed, in which the low-resistance state is unable to resume the high-resistance state. Finally, we fabricate a 1T-TaS₂/graphene hybrid field effect transistor to achieve a gate-tunable PT at room temperature. Such a hybrid device might provide a new avenue for the construction of CDW-based memories based on 2D materials.

DNA Nanostructures-Mediated Molecular Imprinting Lithography

This paper describes the fabrication of polymer stamps using DNA nanostructure templates. This process creates stamps having diverse nanoscale features with dimensions ranging from several tens of nanometers to micrometers. DNA nanostructures including DNA nanotubes, stretched λ-DNA, two-dimensional (2D) DNA brick crystals with three-dimensional (3D) features, hexagonal DNA 2D arrays, and triangular DNA origami were used as master templates to transfer patterns to poly(methyl methacrylate) and poly(l-lactic acid) with high fidelity. The resulting polymer stamps were used as molds to transfer the pattern to acryloxy perfluoropolyether polymer. This work establishes an approach to using self-assembled DNA templates for applications in soft lithography.

Graphene oxide scroll meshes encapsulated Ag nanoparticles for humidity sensing

rGO–Ag scroll meshes shows 3 orders of magnitude higher humidity response compared to that of rGO scroll meshes.

Ultrathin and Atomically Flat Transition-Metal Oxide: Promising Building Blocks for Metal-Insulator Electronics

We present a new and viable template-assisted thermal synthesis method for preparing amorphous ultrathin transition-metal oxides (TMOs) such as TiO₂ and Ta₂O₅, which are converted from crystalline two-dimensional (2D) transition-metal dichalcogenides (TMDs) down to a few atomic layers. X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scanning transmission electron microscopy (STEM) were used to characterize the chemical composition and bonding, surface morphology, and atomic structure of these ultrathin amorphous materials to validate the effectiveness of our synthesis approach. Furthermore, we have fabricated metal-insulator-metal (MIM) diodes using the TiO₂ and Ta₂O₅ as ultrathin insulating layers with low potential barrier heights. Our MIM diodes show a clear transition from direct tunneling to Fowler-Nordheim tunneling, which was not observed in previously reported MIM diodes with TiO₂ or Ta₂O₅ as the insulating layer. We attribute the improved performance of our MIM diodes to the excellent flatness and low pinhole/defect densities in our TMO insulting layers converted from 2D TMDs, which enable the low-threshold and controllable electron tunneling transport. We envision that it is possible to use the ultrathin TMOs converted from 2D TMDs as the insulating layer of a wide variety of metal-insulator and field-effect electronic devices for various applications ranging from microwave mixing, parametric conversion, infrared photodetection, emissive energy harvesting, to ultrafast electronic switching.

Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide

2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal-oxide-semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS₂ n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics.

Multiscale conformal pattern transfer

We demonstrate a method for seamless transfer from a parent flat substrate of basically any lithographic top-down or bottom-up pattern onto essentially any kind of surface. The nano- or microscale patterns, spanning macroscopic surface areas, can be transferred with high conformity onto a large variety of surfaces when such patterns are produced on a thin carbon film, grown on top of a sacrificial layer. The latter allows lifting the patterns from the flat parent substrate onto a water-air interface to be picked up by the host surface of choice. We illustrate the power of this technique by functionalizing broad range of materials including glass, plastics, metals, rough semiconductors and polymers, highlighting the potential applications in in situ colorimetry of the chemistry of materials, anti-counterfeit technologies, biomolecular and biomedical studies, light-matter interactions at the nanoscale, conformal photovoltaics and flexible electronics.

Universal Transfer and Stacking of Chemical Vapor Deposition Grown Two-Dimensional Atomic Layers with Water-Soluble Polymer Mediator

Chemical vapor deposition (CVD) has shown great potential in synthesizing various high-quality two-dimensional (2D) transition metal dichalcogenides (TMDCs). However, the nondestruction transfer of these CVD-grown 2D TMDCs at a high yield remains a key challenge for applying these emerging materials in various aspects. To address this challenge, we designed a water-soluble transfer mediator consisting of two polymers, polyvinylpyrrolidone (PVP) and poly(vinyl alcohol) (PVA), which can form strong interactions with CVD-grown 2D TMDCs for the nondestruction transfer of these materials. With this mediator, we realized the physical transfer of CVD-grown MoS2 flakes and several other 2D TMDCs, including 2D alloys and heterostructures to a wide range of substrates at a high yield of >90% with well-retained properties as evidenced by various microscopic, spectroscopic, and electrical measurements. Field-effect transistors (FETs) made on thus-transferred CVD-grown MoS2 monolayers exhibited obviously higher mobility than those transferred by chemical method. We also constructed several artificial 2D crystals showing very strong interlayer coupling by the multiple transfer of CVD-grown 2D TMDCs monolayers with this approach. This transfer approach will make versatile CVD-grown 2D materials and their artificial stacks with pristine qualities easily accessible for both fundamental studies and practical applications.

Oriented Growth of Pb1- x Snx Te Nanowire Arrays for Integration of Flexible Infrared Detectors

Assembling nanowires into highly ordered arrays is crucial for developing integration circuits. Oriented growth of mid-infrared Pb1- x Snx Te nanowire arrays on bendable mica, extending the function of existing nanowire arrays, is reported. The flexible photodetectors of these nanowire arrays show a high photoresponsivity of 276 A W(-1) (at 800 nm), which is higher than many previously reported infrared nanosensors.

Controllable Growth of Large-Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film

Two-dimensional MoS₂ is a promising material for future nanoelectronics and optoelectronics. It has remained a great challenge to grow large-size crystalline and high surface coverage monolayer MoS₂. In this work, we investigate the controllable growth of monolayer MoS₂ evolving from triangular flakes to continuous thin films by optimizing the concentration of gaseous MoS₂, which has been shown a both thermodynamic and kinetic growth factor. A single-crystal monolayer MoS₂ larger than 300 μm was successfully grown by suppressing the nuclei density and supplying sufficient source. Furthermore, we present a facile process of transferring the centimeter scale MoS₂ assisted with a copper thin film. Our results show the absence of observable residues or wrinkles after we transfer MoS₂ from the growth substrates onto flat substrates using this technique, which can be further extended to transfer other two-dimensional layered materials.

Pronounced Photovoltaic Response from Multilayered Transition-Metal Dichalcogenides PN-Junctions

Transition metal dichalcogenides (TMDs) are layered semiconductors with indirect band gaps comparable to Si. These compounds can be grown in large area, while their gap(s) can be tuned by changing their chemical composition or by applying a gate voltage. The experimental evidence collected so far points toward a strong interaction with light, which contrasts with the small photovoltaic efficiencies η ≤ 1% extracted from bulk crystals or exfoliated monolayers. Here, we evaluate the potential of these compounds by studying the photovoltaic response of electrostatically generated PN-junctions composed of approximately 10 atomic layers of MoSe2 stacked onto the dielectric h-BN. In addition to ideal diode-like response, we find that these junctions can yield, under AM-1.5 illumination, photovoltaic efficiencies η exceeding 14%, with fill factors of ~70%. Given the available strategies for increasing η such as gap tuning, improving the quality of the electrical contacts, or the fabrication of tandem cells, our study suggests a remarkable potential for photovoltaic applications based on TMDs.

BN-Enabled Epitaxy of Pb(1-x)Sn(x)Se Nanoplates on SiO₂/Si for High-Performance Mid-Infrared Detection

By designing a few-layer boron nitried (BN) buffer layer, topological crystalline insulator Pb(1-x)Sn(x)Se nanoplates are directly grown on SiO2/Si, which shows high compatibility with current Si-based integrated circuit technology. Back-gated field-effect transistors of Pb(1-x)Sn(x)Se nanoplates exhibit a room-temperature carrier mobility of 0.73-4.90 cm(2) V(-1) s(-1), comparable to layered materials and molecular crystals, and high-efficiency mid-IR detection (1.9-2.0 μm).

A pentacene monolayer trapped between graphene and a substrate

A self-assembled pentacene monolayer can be fabricated between the solid-solid interface of few-layered graphene (FLG) and the mica substrate, through a diffusion-spreading method. By utilizing a transfer method that allows us to sandwich pentacene between graphene and mica, followed by controlled annealing, we enabled the diffused pentacene to be trapped in the interfaces and led to the formation of a stable monolayer. We found that the formation of a monolayer is kinetically favored by using a 2D Ising lattice gas model for pentacene trapped between the graphene-substrate interfaces. This kinetic Monte Carlo simulation results indicate that, due to the graphene substrate enclosure, the spreading of the first layer proceeds faster than the second layer, as the kinetics favors the filling of voids by molecules from the second layer. This graphene assisted monolayer assembly method provides a new avenue for the fabrication of two-dimensional monolayer structures.

Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS₂ thin film

Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell.

Ultraclean and large-area monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition

Atomically thin hexagonal boron nitride (h-BN) has been demonstrated to be an excellent dielectric layer as well as an ideal van der Waals epitaxial substrate for fabrication of two-dimensional (2D) atomic layers and their vertical heterostructures. Although many groups have obtained large-scale monolayer h-BN through low pressure chemical vapor deposition (LPCVD), it is still a challenge to grow clean monolayers without the reduction of domain size. Here we report the synthesis of large-area (4 × 2 cm(2)) high quality monolayer h-BN with an ultraclean and unbroken surface on copper foil by using LPCVD. A detailed investigation of the key factors affecting growth and transfer of the monolayer was carried out in order to eliminate the adverse effects of impurity particles. Furthermore, an optimized transfer approach allowed the nondestructive and clean transfer of the monolayer from copper foil onto an arbitrary substrate, including a flexible substrate, under mild conditions. Atomic force microscopy indicated that the root-mean-square (RMS) roughness of the monolayer h-BN on SiO2 was less than 0.269 nm for areas with fewer wrinkles. Selective area electron diffraction analysis of the h-BN revealed a pattern of hexagonal diffraction spots, which unambiguously demonstrated its highly crystalline character. Our work paves the way toward the use of ultraclean and large-area monolayer h-BN as the dielectric layer in the fabrication of high performance electronic and optoelectronic devices for novel 2D atomic layer materials.

Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering

Tuning the electronic structure of 2D materials is a very powerful asset toward tailoring their properties to suit the demands of future applications in optoelectronics. Strain engineering is one of the most promising methods in this regard. We demonstrate that even very small out-of-plane axial compression readily modifies the electronic structure of monolayer MoS2. As we show through in situ resonant and nonresonant Raman spectroscopy and photoluminescence measurements combined with theoretical calculations, the transition from direct to indirect band gap semiconductor takes place at ∼0.5 GPa, and the transition to a semimetal occurs at stress smaller than 3 GPa.