n-type colloidal semiconductor nanocrystals

Photoinduced Surface Charging in Iron-Carbonyl-Functionalized Colloidal Semiconductor Nanocrystals

Organometallic surface functionalization of colloidal CdSe and CdS nanocrystals using iron tetracarbonyl moieties is demonstrated to enable study of in situ colloidal nanocrystal surface redox chemistry. Spectroscopic measurements of the surface-bound metal carbonyl C-O stretches were used to elucidate the coordination environments and local symmetry of surface sites. The C-O stretching frequencies of these fragments were correlated to the electric field induced by nanocrystal surface charges and shift in energy upon surface reduction or oxidation. These measurements revealed that CdSe nanocrystals can accumulate multiple surface electrons under supra-band gap photoexcitation, a process likely relevant to photoactivated nanocrystal processes such as photobrightening. These surface charges are stable for hours and decay extremely slowly under anaerobic conditions.

Electrochemical Modulation of the Photophysics of Surface-Localized Trap States in Core/Shell/(Shell) Quantum Dot Films

In this work, we systematically study the spectroelectrochemical response of CdSe quantum dots (QDs), CdSe/CdS core/shell QDs with varying CdS shell thicknesses, and CdSe/CdS/ZnS core/shell/shell QDs in order to elucidate the influence of localized surface trap states on the optoelectronic properties. By correlating the differential absorbance and the photoluminescence upon electrochemically raising the Fermi level, we reveal that trap states near the conduction band (CB) edge give rise to nonradiative recombination pathways regardless of the CdS shell thickness, evidenced by quenching of the photoluminescence before the CB edge is populated with electrons. This points in the direction of shallow trap states localized on the CdS shell surface that give rise to nonradiative recombination pathways. We suggest that these shallow trap states reduce the quantum yield because of enhanced hole trapping when the Fermi level is raised electrochemically. We show that these shallow trap states are removed when additional wide band gap ZnS shells are grown around the CdSe/CdS core/shell QDs.

Long-Lived Negative Photocharging in Colloidal CdSe Quantum Dots Revealed by Coherent Electron Spin Precession

Photoinduced charging in CdSe colloidal quantum dots (QDs) is investigated by time-resolved pump-probe spectroscopy that is sensitive to electron spin polarization. This technique monitors the coherent spin dynamics of optically oriented electrons precessing around an external magnetic field. By addition of 1-octanethiol to the CdSe QD solution in toluene, an extremely long-lived negative photocharging is detected that lives up to 1 month in an N₂ atmosphere and hours in an air atmosphere at room temperature. 1-Octanethiol not only acts as a hole acceptor but also results in a reduction of the oxygen-induced photo-oxidation in CdSe QDs, allowing air-stable negative photocharging. Two types of negative photocharging states with different spin precession frequencies and very different lifetimes are identified. These findings have important implications for understanding the photophysical processes in colloidal nanostructures.

On the Stability of Permanent Electrochemical Doping of Quantum Dot, Fullerene, and Conductive Polymer Films in Frozen Electrolytes for Use in Semiconductor Devices

Semiconductor films that allow facile ion transport can be electronically doped via electrochemistry, where the amount of injected charge can be controlled by the potential applied. To apply electrochemical doping to the design of semiconductor devices, the injected charge has to be stabilized to avoid unintentional relaxation back to the intrinsic state. Here, we investigate methods to increase the stability of electrochemically injected charges in thin films of a wide variety of semiconductor materials, namely inorganic semiconductors (ZnO NCs, CdSe NCs, and CdSe/CdS core/shell NCs) and organic semiconductors (P3DT, PCBM, and C60). We show that by charging the semiconductors at elevated temperatures in solvents with melting points above room temperature, the charge stability at room temperature increases greatly, from seconds to days. At reduced temperature (-75 °C when using succinonitrile as electrolyte solvent) the injected charge becomes entirely stable on the time scale of our experiments (up to several days). Other high melting point solvents such as dimethyl sulfone, ethylene carbonate, and poly(ethylene glycol) (PEG) also offer increased charge stability at room temperature. Especially the use of PEG increases the room temperature charge stability by several orders of magnitude compared to using acetonitrile. We discuss how this improvement of the charge stability is related to the immobilization of electrolyte ions and impurities. While the electrolyte ions are immobilized, conductivity measurements show that electrons in the semiconductor films remain mobile. These results highlight the potential of using solidified electrolytes to stabilize injected charges, which is a promising step toward making semiconductor devices based on electrochemically doped semiconductor thin films.

Preparation and Specific Capacitance Properties of Sulfur, Nitrogen Co-Doped Graphene Quantum Dots

Sulfur, nitrogen co-doped graphene quantum dots (S, N-GQDs) with high crystallinity were obtained by a top-down strategy. The as-prepared S, N-GQDs were investigated and the results indicate that S, N-GQDs exhibit a transverse dimension about 20 nm and a topographic height of 1-2 layers graphene. The incorporation of S, N can effectively reduce the layers of GQDs and strip the graphene sheets. Moreover, the S, N-GQDs reveal an absorption band located at 405 nm and exhibit an adjustable fluorescence characteristic in the excitation-visible range. Meanwhile, the S, N-GQDs shows a high specific capacitance of 362.60 F g-1 at a fixed scan rate of 5 mV s -1. This high performance is ascribed to the additional high pseudocapacitance provided by the doped S, N and the doping state acting as a trap state to enhance the charge storage capacity. The high specific capacitance advantages of S, N-GQDs illustrate their potential prospects in the capacitors.

Role of Surface Reduction in the Formation of Traps in n-Doped II-VI Semiconductor Nanocrystals: How to Charge without Reducing the Surface

The efficiency of nanocrystal (NC)-based devices is often limited by the presence of surface states that lead to localized energy levels in the bandgap. Yet, a complete understanding of the nature of these traps remains challenging. Although theoretical modeling has greatly improved our comprehension of the NC surface, several experimental studies suggest the existence of metal-based traps that have not yet been found with theoretical methods. Since there are indications that these metal-based traps form in the presence of excess electrons, the present work uses density functional theory (DFT) calculations to study the effects of charging II-VI semiconductor NCs with either full or imperfect surface passivation. It is found that charge injection can lead to trap-formation via two pathways: metal atom ejection from perfectly passivated NCs or metal-metal dimer-formation in imperfectly passivated NCs. Fully passivated CdTe NCs are observed to be stable up to a charge of two electrons. Further reduction leads to charge localization on a surface Cd atom and the formation of in-gap states. The effects of suboptimal passivation are probed by charging NCs where an X-type ligand is removed from the (100) plane. In this case, injection of even one electron leads to Cd-dimerization and trap-formation. Addition of an L-type amine ligand prevents this dimer-formation and is suggested to also prevent trapping of photoexcited electrons in charge neutral NCs. The results presented in this work are generalized to NCs of different sizes and other II-VI semiconductors. This has clear implications for n-doping II-VI semiconductor NCs without introducing surface traps due to metal ion reduction. The possible effect of these metal ion localized traps on the photoluminescence efficiency of neutral NCs is also discussed.

Engineering Auger recombination in colloidal quantum dots via dielectric screening

Auger recombination is the main non-radiative decay pathway for multi-carrier states of colloidal quantum dots, which affects performance of most of their optical and optoelectronic applications. Outstanding single-exciton properties of CdSe/CdS core/shell quantum dots enable us to simultaneously study the two basic types of Auger recombination channels-negative trion and positive trion channels. Though Auger rates of positive trion are regarded to be much faster than that of negative trion for II-VI quantum dots in literature, our experiments find the two rates can be inverted for certain core/shell geometries. This is confirmed by theoretical calculations as a result of geometry-dependent dielectric screening. By varying the core/shell geometry, both types of Auger rates can be independently tuned for ~ 1 order of magnitude. Experimental and theoretical findings shed new light on designing quantum dots with necessary Auger recombination characteristics for high-power light-emitting-diodes, lasers, single-molecular tracking, super-resolution microscope, and advanced quantum light sources.

Electron-Promoted X-Type Ligand Displacement at CdSe Quantum Dot Surfaces

Quantum dot surfaces are redox active and are known to influence the electronic properties of nanocrystals, yet the molecular-level changes in surface chemistry that occur upon addition of charge are not well understood. In this paper, we report a systematic study monitoring changes in surface coordination chemistry in 3.4 nm CdSe quantum dots upon remote chemical doping by the radical anion reductant sodium naphthalenide (Na[C₁₀H₈]). These studies reveal a new mechanism for charge-balancing the added electrons that localize on surface states through loss of up to ca. 5% of the native anionic carboxylate ligands, as quantified through a combination of UV-vis absorption, ¹H NMR, and FTIR spectroscopies. A new method for distinguishing between reduction of surface metal and chalcogenide ions by monitoring ligand loss and optical changes upon doping is introduced. This work emphasizes the importance of studying changes in surface chemistry with remote chemical doping and is more broadly contextualized within the redox reactivity of the QD surface.

Stepwise Two-Photon-Induced Electron Transfer from Higher Excited States of Noncovalently Bound Porphyrin-CdS/ZnS Core/Shell Nanocrystals

There has been an increasing amount of interest in stepwise two-photon-absorption (2PA)-induced photochemical reactions because of their extremely lower power thresholds compared to that of the simultaneous process and drastic reaction enhancements in some cases. However, stepwise 2PA-induced photochemical reactions were reported only in single chromophores and covalently bound bichromophores and there are few reports on these reactions in noncovalently bound systems because of weak electronic interactions among chromophores. This study demonstrated the stepwise 2PA-induced electron transfer from higher excited states in noncovalently bound protoporphyrin IX·CdS/ZnS core/shell nanocrystals (NCs). The electron transfer from higher excited states of porphyrin to CdS NCs successfully overcomes the activation barrier associated with the wide bandgap ZnS shell, indicating that a high reduction potential can be obtained with the stepwise 2PA process. The concept presented in this study can be applied to various noncovalently bound multichromophore systems to explore nonlinear photoresponses.

Tunable Electron-Injection Channels of Heterostructured ZnSe@CdTe Nanocrystals for Surface-Chemistry-Involved Electrochemiluminescence

Tunable charge transfer in and out of nanocrystals (NCs) is crucial to their profound light-emitting applications. Herein a convenient strategy toward tunable electron-injection channels of NCs was achieved by partially coating highly passivated CdTe NCs with unperfected ZnSe shell. Potential- and spectrum-resolved electrochemiluminescence (ECL) characterizations proved that radiative charge recombination for ECL of the heterostructured ZnSe@CdTe NCs only occurred within CdTe core, whereas configurational ions in ECL solution could electrostatically or chemically change the surface states of both the ZnSe shell and the uncoated CdTe core, resulting in tunable electron-injection channels for ECL of ZnSe@CdTe NCs. S^2- anion postponed the electron-injection channel for ECL of ZnSe@CdTe NCs from -1.44 to -1.58 V, Zn²⁺ cation presented two electron-injection channels for ECL at -1.53 and -1.22 V, respectively, whereas Cd²⁺ cation enabled three electron-injection channels for ECL at -1.53, -1.18, and -0.95 V, respectively. The "valve"-like role of configurational ions on the electron-injection channels of ZnSe@CdTe NCs is promising to design novel electrochemiluminophores.

Energy level tuned indium arsenide colloidal quantum dot films for efficient photovoltaics

We introduce indium arsenide colloidal quantum dot films for photovoltaic devices, fabricated by two-step surface modification. Native ligands and unwanted oxides on the surface are peeled off followed by passivating with incoming atomic or short ligands. The near-infrared-absorbing n-type indium arsenide colloidal quantum dot films can be tuned in energy-level positions up to 0.4 eV depending on the surface chemistry, and consequently, they boost collection efficiency when used in various emerging solar cells. As an example, we demonstrate p-n junction between n-type indium arsenide and p-type lead sulfide colloidal quantum dot layers, which leads to a favorable electronic band alignment and charge extraction from both colloidal quantum dot layers. A certified power conversion efficiency of 7.92% is achieved without additionally supporting carrier transport layers. This study provides richer materials to explore for high-efficiency emerging photovoltaics and will broaden research interest for various optoelectronic applications using the n-type covalent nanocrystal arrays.

Conduction Band Fine Structure in Colloidal HgTe Quantum Dots

HgTe colloidal quantum dots (QDs) are of interest because quantum confinement of semimetallic bulk HgTe allows one to synthetically control the bandgap throughout the infrared. Here, we synthesize highly monodisperse HgTe QDs and tune their doping both chemically and electrochemically. The monodispersity of the QDs was evaluated using small-angle X-ray scattering (SAXS) and suggests a diameter distribution of ∼10% across multiple batches of different sizes. Electron-doped HgTe QDs display an intraband absorbance and bleaching of the first two excitonic features. We see splitting of the intraband peaks corresponding to electronic transitions from the occupied 1S_e state to a series of nondegenerate 1P_e states. Spectroelectrochemical studies reveal that the degree of splitting and relative intensity of the intraband features remain constant across doping levels up to two electrons per QD. Theoretical modeling suggests that the splitting of the 1P_e level arises from spin-orbit coupling and reduced QD symmetry. The fine structure of the intraband transitions is observed in the ensemble studies due to the size uniformity of the as-synthesized QDs and strong spin-orbit coupling inherent to HgTe.

Electron Transfer into Electron-Accumulated Nanocrystals: Mimicking Intermediate Events in Multielectron Photocatalysis II

The overall efficiency of multielectron photocatalytic reactions is often much lower than the charge-separation yield reported for the first charge-transfer (CT) event. Our recent study has partially linked this gap to CT from charge-accumulated light harvesters. Another possible intermediate event lowering the efficiency is CT into charge-accumulated nanocatalysts. To study this event, we built a "toy" system using nanocrystal quantum dots (QDs) doped with extra electrons to mimick charge-accumulated nanocatalysts. We measured electron transfer (ET) from photoexcited molecular light harvesters into doped QDs using transient absorption spectroscopy. The measurements reveal that the pre-existing electron slows down ET from 37.8 ± 2.2 ps in the neutral sample to 93.4 ± 8.6 ps in the singly doped sample, accelerates charge recombination (CR) from 7.02 ± 0.84 to 3.69 ± 0.25 ns, and lowers the electron-injection yield by ∼14%. This study uncovers yet another possible intermediate event lowering the efficiency of multielectron photocatalysis.

Spectroscopy of Surface-State p-Doped CdSe/CdS Quantum Dots

Transient absorption (TA) and time-resolved photoluminescence (PL) spectroscopies have been used to provide direct spectroscopic evidence for the recently reported phenomenon of thermal "surface charging" in II-VI quantum dots (QDs). In these studies, zincblende CdSe cores are synthesized by standard methods, and a thin CdS shell deposited by the decomposition of Cd(DDTC)₂, resulting in core/shell QDs with chalcogenide-rich surfaces. Following ligand exchange with oleylamine, these QDs have empty low-lying surface states that can be thermally populated from the valence band. At room temperature, the surface charging equilibrium results in some fraction of the particles having a hole in the valence band, i.e., the surface acceptor states make the particle p-type. Photoexcitation of the surface charged state results in what is essentially a positive trion, which can undergo a fast Auger recombination. Both PL and TA (bleach recovery) kinetics of the CdSe/CdS QDs show a 70 ps decay component, which is assigned to Auger recombination. The empty nonbonding surface orbitals are passivated by ligation with a trialkylphosphine, and the fast decay component is absent when tributylphosphine is present. The comparison of the TA and PL kinetics shows that the relative amplitude of the 70 ps component is a factor of about 1.5 greater in the TA than in the PL. They also show that the fast component in the PL spectrum is shifted about 6 nm to the blue of the exciton luminescence. The above observations can be understood in terms of the trion versus exciton spectroscopy and strongly support the assignment of the 70 ps transient to the decay of a trion formed from the surface charged state.

Cation Effects on the Reduction of Colloidal ZnO Nanocrystals

The effects of a variety of monatomic cations (H⁺, Li⁺, Na⁺, K⁺, Mg²⁺, and Ca²⁺) and larger cations (decamethylcobaltocenium and tetrabutylammonium) on the reduction of colloidal ZnO nanocrystals (NCs) are described. Suspensions of "TOPO"-capped ZnO NCs in toluene/THF were treated with controlled amounts of one-electron reductants (CoCp*₂ or sodium benzophenone anion radical) and cations. Equilibria were quickly established and the extent of NC reduction was quantified via observation of the characteristic near-IR absorbance of conduction band electrons. Addition of excess reductant with or without added cations led to a maximum average number of electrons per ZnO NC, which was dependent on the NC volume and on the nature of the cation. Electrons are transferred to the ZnO NCs in a stoichiometric way, roughly one electron per monovalent cation and roughly two electrons per divalent cation. This shows that cations are charge-balancing the added electrons in ZnO NCs. Overall, our experiments provide insight into the thermodynamics of charge storage and relate the colloidal chemistry of ZnO with bulk oxide semiconductors. They indicate that the apparent band energies of colloidal ZnO are highly dependent on cation/electrolyte composition and concentration, as is known for bulk interfaces, and that electrons and cations are added stoichiometrically to balance charge, similar to the behavior of Li⁺-batteries.

"Intact" Carrier Doping by Pump-Pump-Probe Spectroscopy in Combination with Interfacial Charge Transfer: A Case Study of CsPbBr3 Nanocrystals

Carrier doping is important for semiconductor nanocrystals (NCs) as it offers a new knob to tune NCs' functionalities, in addition to size and shape control. Also, extensive studies on NC devices have revealed that under operating conditions NCs are often unintentionally doped with electrons or holes. Thus, it is essential to be able to control the doping of NCs and study the carrier dynamics of doped NCs. The extension of previously reported redox-doping methods to chemically sensitive materials, such as recently introduced perovskite NCs, has remained challenging. We introduce an "intact" carrier-doping method by performing pump-pump-probe transient absorption spectroscopy on NC-acceptor complexes. The first pump pulse is used to trigger charge transfer from the NC to the acceptor, leading to NCs doped with a band edge carrier; the following pump-probe pulses measure the dynamics of carrier-doped NCs. We performed this measurement on CsPbBr₃ NCs and deduced positive and negative trion lifetimes of 220 ± 50 and 150 ± 40 ps, respectively, for 10 nm diameter NCs, both dominated by Auger recombination. It also allowed us to identify randomly photocharged excitons in CsPbBr₃ NCs as positive trions.

Plasmon-induced carrier polarization in semiconductor nanocrystals

Spintronics ¹ and valleytronics ² are emerging quantum electronic technologies that rely on using electron spin and multiple extrema of the band structure (valleys), respectively, as additional degrees of freedom. There are also collective properties of electrons in semiconductor nanostructures that potentially could be exploited in multifunctional quantum devices. Specifically, plasmonic semiconductor nanocrystals^3-10 offer an opportunity for interface-free coupling between a plasmon and an exciton. However, plasmon-exciton coupling in single-phase semiconductor nanocrystals remains challenging because confined plasmon oscillations are generally not resonant with excitonic transitions. Here, we demonstrate a robust electron polarization in degenerately doped In₂O₃ nanocrystals, enabled by non-resonant coupling of cyclotron magnetoplasmonic modes ¹¹ with the exciton at the Fermi level. Using magnetic circular dichroism spectroscopy, we show that intrinsic plasmon-exciton coupling allows for the indirect excitation of the magnetoplasmonic modes, and subsequent Zeeman splitting of the excitonic states. Splitting of the band states and selective carrier polarization can be manipulated further by spin-orbit coupling. Our results effectively open up the field of plasmontronics, which involves the phenomena that arise from intrinsic plasmon-exciton and plasmon-spin interactions. Furthermore, the dynamic control of carrier polarization is readily achieved at room temperature, which allows us to harness the magnetoplasmonic mode as a new degree of freedom in practical photonic, optoelectronic and quantum-information processing devices.

The Role of Dopant Ions on Charge Injection and Transport in Electrochemically Doped Quantum Dot Films

Control over the charge density is very important for implementation of colloidal semiconductor nanocrystals into various optoelectronic applications. A promising approach to dope nanocrystal assemblies is charge injection by electrochemistry, in which the charge compensating electrolyte ions can be regarded as external dopant ions. To gain insight into the doping mechanism and the role of the external dopant ions, we investigate charge injection in ZnO nanocrystal assemblies for a large series of charge compensating electrolyte ions with spectroelectrochemical and electrochemical transistor measurements. We show that charge injection is limited by the diffusion of cations in the nanocrystal films as their diffusion coefficient are found to be ∼7 orders of magnitude lower than those of electrons. We further show that the rate of charge injection depends strongly on the cation size and cation concentration. Strikingly, the onset of electron injection varies up to 0.4 V, depending on the size of the electrolyte cation. For the small ions Li⁺ and Na⁺ the onset is at significantly less negative potentials. For larger ions (K⁺, quaternary ammonium ions) the onset is always at the same, more negative potential, suggesting that intercalation may take place for Li⁺ and Na⁺. Finally, we show that the nature of the charge compensating cation does not affect the source-drain electronic conductivity and mobility, indicating that shallow donor levels from intercalating ions fully hybridize with the quantum confined energy levels and that the reorganization energy due to intercalating ions does not strongly affect electron transport in these nanocrystal assemblies.

Halogens in the Synthesis of Colloidal Semiconductor Nanocrystals

In this review, we highlight the role of halogenated compounds in the colloidal synthesis of nanostructured semiconductors. Halogen-containing metallic salts used as precursors and halogenated hydrocarbons used as ligands allow stabilizing different shapes and crystal phases, and enable the formation of colloidal systems with different dimensionality. We summarize recent reports on the tremendous influence of these compounds on the physical properties of nanocrystals, like field-effect mobility and solar cell performance and outline main analytical methods for the nanocrystal surface control.

Measuring the Electronic Structure of Nanocrystal Thin Films Using Energy-Resolved Electrochemical Impedance Spectroscopy

Use of nanocrystal thin films as active layers in optoelectronic devices requires tailoring of their electronic band structure. Here, we demonstrate energy-resolved electrochemical impedance spectroscopy (ER-EIS) as a method to quantify the electronic structure in nanocrystal thin films. This technique is particularly well-suited for nanocrystal-based thin films as it allows for in situ assessment of electronic structure during solution-based deposition of the thin film. Using well-studied lead sulfide nanocrystals as an example, we show that ER-EIS can be used to probe the energy position and number density of defect or dopant states as well as the modification of energy levels in nanocrystal solids that results through the exchange of surface ligands. This work highlights that ER-EIS is a sensitive and fast method to measure the electronic structure of nanocrystal thin films and enables their optimization in optoelectronic devices.

Localized Surface Plasmon Resonance in Semiconductor Nanocrystals

Localized surface plasmon resonance (LSPR) in semiconductor nanocrystals (NCs) that results in resonant absorption, scattering, and near field enhancement around the NC can be tuned across a wide optical spectral range from visible to far-infrared by synthetically varying doping level, and post synthetically via chemical oxidation and reduction, photochemical control, and electrochemical control. In this review, we will discuss the fundamental electromagnetic dynamics governing light matter interaction in plasmonic semiconductor NCs and the realization of various distinctive physical properties made possible by the advancement of colloidal synthesis routes to such NCs. Here, we will illustrate how free carrier dielectric properties are induced in various semiconductor materials including metal oxides, metal chalcogenides, metal nitrides, silicon, and other materials. We will highlight the applicability and limitations of the Drude model as applied to semiconductors considering the complex band structures and crystal structures that predominate and quantum effects that emerge at nonclassical sizes. We will also emphasize the impact of dopant hybridization with bands of the host lattice as well as the interplay of shape and crystal structure in determining the LSPR characteristics of semiconductor NCs. To illustrate the discussion regarding both physical and synthetic aspects of LSPR-active NCs, we will focus on metal oxides with substantial consideration also of copper chalcogenide NCs, with select examples drawn from the literature on other doped semiconductor materials. Furthermore, we will discuss the promise that LSPR in doped semiconductor NCs holds for a wide range of applications such as infrared spectroscopy, energy-saving technologies like smart windows and waste heat management, biomedical applications including therapy and imaging, and optical applications like two photon upconversion, enhanced luminesence, and infrared metasurfaces.

Resistance Switching and Memristive Hysteresis in Visible-Light-Activated Adsorbed ZnO Thin Films

The discovery of resistance switching memristors marks a paradigm shift in the search for alternative non-volatile memory components in the semiconductor industry. Normally a dielectric in these bistable memory cells changes its resistance with an applied electric field or current, albeit retaining the resistive state based on the history of the applied field. Despite showing immense potential, sustainable growth of this new memory technology is bogged down by several factors including cost, intricacies of design, lack of efficient tunability, and issues with scalability and eco-friendliness. Here, we demonstrate a simple arrangement wherein an ethanol-adsorbed ZnO thin film exhibits orders of magnitude change in resistance when activated by visible light. We show that there exists two stable ohmic states, one in the dark and the other in the illuminated regime, as well as a significant delay in the transition between these saturated states. We also demonstrate that visible light acts as a non-invasive tuning parameter for the bistable resistive states. Furthermore, a pinched hysteresis I-V response observed in these devices indicate what seems to be a new type of memristive behaviour.

The role of surface ligands in determining the electronic properties of quantum dot solids and their impact on photovoltaic figure of merits

Surface chemistry plays a crucial role in determining the electronic properties of quantum dot solids and may well be the key to mitigate loss processes involved in quantum dot solar cells. Surface ligands help to maintain the shape and size of the individual dots in solid films, to preserve the clean energy band gap of the individual particles and to control charge carrier conduction across solid films, in turn regulating their performance in photovoltaic applications. In this report, we show that the changes in size, shape and functional groups of small chain organic ligands enable us to modulate mobility, dielectric constant and carrier doping density of lead sulfide quantum dot solids. Furthermore, we correlate these results with performance, stability and recombination processes in the respective photovoltaic devices. Our results highlight the critical role of surface chemistry in the electronic properties of quantum dots. The role of the size, functionality and the surface coverage of the ligands in determining charge transport properties and the stability of quantum dot solids have been discussed. Our findings, when applied in designing new ligands with higher mobility and improved passivation of quantum dot solids, can have important implications for the development of high-performance quantum dot solar cells.

Frontier challenges in doping quantum dots: synthesis and characterization

Impurity doping in semiconductor quantum dots (QDs) has numerous prospects in implementing and altering their properties and technologies. Herein, we review the state-of-the-art doping techniques arising from colloidal synthesis methods. We first discuss the advantages and challenges involved in doping; we then discuss various doping techniques, including clustering of dopants as well as expulsion out of the lattice due to self-purification. Some of these techniques have been shown to open up a new generation of robust doped semiconductor quantum dots with cluster-free doping which will be suitable for various spin-based solid-state device technologies and overcome the longstanding challenges of controlled impurity doping. Further, we discuss inhibitors such as defects, clustering and interfaces, followed by current open questions. These include pathways to obtain uniform doping in the required radial position with unprecedented control over the dopant concentration and the size of the QDs.

We discuss state-of-the-art doping strategies for colloidal quantum dots, their principle, advantages and challenges in implementing the strategies.

Self-doped colloidal semiconductor nanocrystals with intraband transitions in steady state

The tunable bandgap energy has been recognized as a prominent feature of the colloidal semiconductor nanocrystal, also called the colloidal quantum dot (CQD).

Deciphering Charging Status, Absolute Quantum Efficiency, and Absorption Cross Section of Multicarrier States in Single Colloidal Quantum Dots

Upon photo- or electrical-excitation, colloidal quantum dots (QDs) are often found in multicarrier states due to multiphoton absorption, photocharging, or imbalanced carrier injection of the QDs. While many of these multicarrier states are observed in single-dot spectroscopy, their properties are not well studied due to random charging/discharging, emission intensity intermittency, and uncontrolled surface defects of single QDs. Here we report in situ deciphering of the charging status, precisely assessing the absorption cross section, and determining the absolute emission quantum yield of monoexciton and biexciton states for neutral, positively charged, and negatively charged single core/shell CdSe/CdS QDs. We uncover very different photon statistics of the three charge states in single QDs and unambiguously identify their charge signs together with the information on their photoluminescence decay dynamics. We then show their distinct photoluminescence saturation behaviors and evaluate the absolute values of absorption cross sections and quantum efficiencies of monoexcitons and biexcitons. We demonstrate that the addition of an extra hole or electron in a QD not only changes its emission properties but also varies its absorption cross section.

Towards zero-threshold optical gain using charged semiconductor quantum dots

Colloidal semiconductor quantum dots are attractive materials for the realization of solution-processable lasers. However, their applications as optical-gain media are complicated by a non-unity degeneracy of band-edge states, because of which multiexcitons are required to achieve the lasing regime. This increases the lasing thresholds and leads to very short optical gain lifetimes limited by nonradiative Auger recombination. Here, we show that these problems can be at least partially resolved by employing not neutral but negatively charged quantum dots. By applying photodoping to specially engineered quantum dots with impeded Auger decay, we demonstrate a considerable reduction of the optical gain threshold due to suppression of ground-state absorption by pre-existing carriers. Moreover, by injecting approximately one electron per dot on average, we achieve a more than twofold reduction in the amplified spontaneous emission threshold, bringing it to the sub-single-exciton level. These measurements indicate the feasibility of 'zero-threshold' gain achievable by completely blocking the band-edge state with two electrons.

Size-dependent donor and acceptor states in codoped Si nanocrystals studied by scanning tunneling spectroscopy

The electrical and optical properties of semiconductor nanocrystals (NCs) can be controlled, in addition to size and shape, by doping. However, such a process is not trivial in NCs due to the high formation energy of dopants there. Nevertheless, it has been shown theoretically that in the case of B and P (acceptor/donor) codoped Si-NCs the formation energy is reduced relative to that of single type doping. Previous comprehensive measurements on ensembles of such codoped Si-NCs have pointed to the presence of donor and acceptor states within the energy gap. However, such a conjecture has not been directly verified previously. Following that, we investigate here the electronic properties of B and P codoped Si-NCs via Scanning Tunneling Spectroscopy. We monitored the quantum confinement effect in this system, for which the energy gap changed from ∼1.4 eV to ∼1.8 eV with the decrease of NC diameter from 8.5 to 3.5 nm. Importantly, all spectra showed two in-gap band-states, one close to the conduction band edge and the other to the valence band edge, which we attribute to the P and B dopant levels, respectively. The energy separation between these dopants states decrease monotonically with increasing NC diameter, in parallel to the decrease of the conduction-to-valence bands separation. A fundamental quantity that is derived directly for these Si-NCs is the intrinsic like position of the Fermi energy, a non-trivial result that is very relevant for understanding the system. Following the above results we suggest an explanation for the character and the origin of the dopants bands.

Heterovalent Doping in Colloidal Semiconductor Nanocrystals: Cation-Exchange-Enabled New Accesses to Tuning Dopant Luminescence and Electronic Impurities

Heterovalent doping in colloidal semiconductor nanocrystals (CSNCs), with provisions of extra electrons (n-type doping) or extra holes (p-type doping), could enhance their performance of optical and electronical properties. In view of the challenges imposed by the intrinsic self-purification, self-quenching, and self-compensation effects of CSNCs, we outline the progress on heterovalent doping in CSNCs, with particular focus on the cation-exchange-enabled tuning of dopant luminescence and electronic impurities. Thus, the well-defined substitutional or interstitial heterovalent doping in a deep position of an isolated nanocrystal has been fulfilled. We also envision that new coordination ligand-initiated cation exchange would bring about more choices of heterovalent dopants. With the aid of high-resolution characterization methods, the accurate atom-specific dopant location and distribution could be confirmed clearly. Finally, new applications, some of the remaining unanswered questions, and future directions of this field are presented.

Superposition Principle in Auger Recombination of Charged and Neutral Multicarrier States in Semiconductor Quantum Dots

Application of colloidal semiconductor quantum dots (QDs) in optical and optoelectronic devices is often complicated by unintentional generation of extra charges, which opens fast nonradiative Auger recombination pathways whereby the recombination energy of an exciton is quickly transferred to the extra carrier(s) and ultimately dissipated as heat. Previous studies of Auger recombination have primarily focused on neutral and, more recently, negatively charged multicarrier states. Auger dynamics of positively charged species remains more poorly explored due to difficulties in creating, stabilizing, and detecting excess holes in the QDs. Here we apply photochemical doping to prepare both negatively and positively charged CdSe/CdS QDs with two distinct core/shell interfacial profiles ("sharp" versus "smooth"). Using neutral and charged QD samples we evaluate Auger lifetimes of biexcitons, negative and positive trions (an exciton with an extra electron or a hole, respectively), and multiply negatively charged excitons. Using these measurements, we demonstrate that Auger decay of both neutral and charged multicarrier states can be presented as a superposition of independent elementary three-particle Auger events. As one of the manifestations of the superposition principle, we observe that the biexciton Auger decay rate can be presented as a sum of the Auger rates for independent negative and positive trion pathways. By comparing the measurements on the QDs with the "sharp" versus "smooth" interfaces, we also find that while affecting the absolute values of Auger lifetimes, manipulation of the shape of the confinement potential does not lead to violation of the superposition principle, which still allows us to accurately predict the biexciton Auger lifetimes based on the measured negative and positive trion dynamics. These findings indicate considerable robustness of the superposition principle as applied to Auger decay of charged and neutral multicarrier states, suggesting its generality to quantum-confined nanocrystals of arbitrary compositions and complexities.

Synthesis and Spectroscopy of Silver-Doped PbSe Quantum Dots

Electronic impurity doping of bulk semiconductors is an essential component of semiconductor science and technology. Yet there are only a handful of studies demonstrating control of electronic impurities in semiconductor nanocrystals. Here, we studied electronic impurity doping of colloidal PbSe quantum dots (QDs) using a postsynthetic cation exchange reaction in which Pb is exchanged for Ag. We found that varying the concentration of dopants exposed to the as-synthesized PbSe QDs controls the extent of exchange. The electronic impurity doped QDs exhibit the fundamental spectroscopic signatures associated with injecting a free charge carrier into a QD under equilibrium conditions, including a bleach of the first exciton transition and the appearance of a quantum-confined, low-energy intraband absorption feature. Photoelectron spectroscopy confirms that Ag acts as a p-type dopant for PbSe QDs and infrared spectroscopy is consistent with k·p calculations of the size-dependent intraband transition energy. We find that to bleach the first exciton transition by an average of 1 carrier per QD requires that approximately 10% of the Pb be replaced by Ag. We hypothesize that the majority of incorporated Ag remains at the QD surface and does not interact with the core electronic states of the QD. Instead, the excess Ag at the surface promotes the incorporation of <1% Ag into the QD core where it causes p-type doping behavior.

Colloidal Synthesis of Te-Doped Bi Nanoparticles: Low-Temperature Charge Transport and Thermoelectric Properties

Electronically doped nanoparticles formed by incorporation of impurities have been of great interest because of their controllable electrical properties. However, the development of a strategy for n-type or p-type doping on sub-10 nm-sized nanoparticles under the quantum confinement regime is very challenging using conventional processes, owing to the difficulty in synthesis. Herein, we report the colloidal chemical synthesis of sub-10 nm-sized tellurium (Te)-doped Bismuth (Bi) nanoparticles with precisely controlled Te content from 0 to 5% and systematically investigate their low-temperature charge transport and thermoelectric properties. Microstructural characterization of nanoparticles demonstrates that Te ions are successfully incorporated into Bi nanoparticles rather than remaining on the nanoparticle surfaces. Low-temperature Hall measurement results of the hot-pressed Te-doped Bi-nanostructured materials, with grain sizes ranging from 30 to 60 nm, show that the charge transport properties are governed by the doping content and the related impurity and nanoscale grain boundary scatterings. Furthermore, the low-temperature thermoelectric properties reveal that the electrical conductivity and Seebeck coefficient expectedly change with the Te content, whereas the thermal conductivity is significantly reduced by Te doping because of phonon scattering at the sites arising from impurities and nanoscale grain boundaries. Accordingly, the 1% Te-doped Bi sample exhibits a higher figure-of-merit ZT by ∼10% than that of the undoped sample. The synthetic strategy demonstrated in this study offers the possibility of electronic doping of various quantum-confined nanoparticles for diverse applications.

Chemical Synthesis, Doping, and Transformation of Magic-Sized Semiconductor Alloy Nanoclusters

Nanoclusters are important prenucleation intermediates for colloidal nanocrystal synthesis. In addition, they exhibit many intriguing properties originating from their extremely small size lying between molecules and typical nanocrystals. However, synthetic control of multicomponent semiconductor nanoclusters remains a daunting goal. Here, we report on the synthesis, doping, and transformation of multielement magic-sized clusters, generating the smallest semiconductor alloys. We use Lewis acid-base reactions at room temperature to synthesize alloy clusters containing three or four types of atoms. Mass spectrometry reveals that the alloy clusters exhibit "magic-size" characteristics with chemical formula of ZnxCd13-xSe13 (x = 0-13) whose compositions are tunable between CdSe and ZnSe. Successful doping of these clusters creates a new class of diluted magnetic semiconductors in the extreme quantum confinement regime. Furthermore, the important role of these alloy clusters as prenucleation intermediates is demonstrated by low temperature transformation into quantum alloy nanoribbons and nanorods. Our study will facilitate the understanding of these novel diluted magnetic semiconductor nanoclusters, and offer new possibilities for the controlled synthesis of nanomaterials at the prenucleation stage, consequently producing novel multicomponent nanomaterials that are difficult to synthesize.

Extremely Slow Spontaneous Electron Trapping in Photodoped n-Type CdSe Nanocrystals

The trapping dynamics of conduction-band electrons in colloidal degenerately doped n-CdSe nanocrystals prepared by photochemical reduction (photodoping) were measured by direct optical methods. The nanocrystals show spontaneous electron trapping with distributed kinetics that extend to remarkably long timescales. Shifts in nanocrystal band-edge potentials caused by quantum confinement and surface ion stoichiometry were also measured by spectroelectrochemical techniques, and their relationship to the slow electron trapping is discussed. The very long electron-trapping timescales observed in these measurements are more consistent with atomic rearrangement than with fundamental electron-transfer processes. Such slow and broadly distributed electron-trapping dynamics are reminiscent of the well-known distributed dynamics of nanocrystal photoluminescence blinking, and potential relationships between the two phenomena are discussed.

Building devices from colloidal quantum dots

The continued growth of mobile and interactive computing requires devices manufactured with low-cost processes, compatible with large-area and flexible form factors, and with additional functionality. We review recent advances in the design of electronic and optoelectronic devices that use colloidal semiconductor quantum dots (QDs). The properties of materials assembled of QDs may be tailored not only by the atomic composition but also by the size, shape, and surface functionalization of the individual QDs and by the communication among these QDs. The chemical and physical properties of QD surfaces and the interfaces in QD devices are of particular importance, and these enable the solution-based fabrication of low-cost, large-area, flexible, and functional devices. We discuss challenges that must be addressed in the move to solution-processed functional optoelectronic nanomaterials.

Selenium Redox Reactivity on Colloidal CdSe Quantum Dot Surfaces

Understanding the structural and compositional origins of midgap states in semiconductor nanocrystals is a longstanding challenge in nanoscience. Here, we report a broad variety of reagents useful for photochemical reduction of colloidal CdSe quantum dots, and we establish that these reactions proceed via a dark surface prereduction step prior to photoexcitation. Mechanistic studies relying on the specific properties of various reductants lead to the proposal that this surface prereduction occurs at oxidized surface selenium sites. These results demonstrate the use of small-molecule inorganic chemistries to control the physical properties of colloidal QDs and provide microscopic insights into the identities and reactivities of their localized surface species.

Electronic Processes within Quantum Dot-Molecule Complexes

The subject of this review is the colloidal quantum dot (QD) and specifically the interaction of the QD with proximate molecules. It covers various functions of these molecules, including (i) ligands for the QDs, coupled electronically or vibrationally to localized surface states or to the delocalized states of the QD core, (ii) energy or electron donors or acceptors for the QDs, and (iii) structural components of QD assemblies that dictate QD-QD or QD-molecule interactions. Research on interactions of ligands with colloidal QDs has revealed that ligands determine not only the excited state dynamics of the QD but also, in some cases, its ground state electronic structure. Specifically, the article discusses (i) measurement of the electronic structure of colloidal QDs and the influence of their surface chemistry, in particular, dipolar ligands and exciton-delocalizing ligands, on their electronic energies; (ii) the role of molecules in interfacial electron and energy transfer processes involving QDs, including electron-to-vibrational energy transfer and the use of the ligand shell of a QD as a semipermeable membrane that gates its redox activity; and (iii) a particular application of colloidal QDs, photoredox catalysis, which exploits the combination of the electronic structure of the QD core and the chemistry at its surface to use the energy of the QD excited state to drive chemical reactions.

Digital Doping in Magic-Sized CdSe Clusters

Magic-sized semiconductor clusters represent an exciting class of materials located at the boundary between quantum dots and molecules. It is expected that replacing single atoms of the host crystal with individual dopants in a one-by-one fashion can lead to unique modifications of the material properties. Here, we demonstrate the dependence of the magneto-optical response of (CdSe)13 clusters on the discrete number of Mn(2+) ion dopants. Using time-of-flight mass spectrometry, we are able to distinguish undoped, monodoped, and bidoped cluster species, allowing for an extraction of the relative amount of each species for a specific average doping concentration. A giant magneto-optical response is observed up to room temperature with clear evidence that exclusively monodoped clusters are magneto-optically active, whereas the Mn(2+) ions in bidoped clusters couple antiferromagnetically and are magneto-optically passive. Mn(2+)-doped clusters therefore represent a system where magneto-optical functionality is caused by solitary dopants, which might be beneficial for future solotronic applications.