Red spectral shift and enhanced quantum efficiency in phonon-free photoluminescence from silicon nanocrystals

Temperature-dependent photoluminescence of surface-engineered silicon nanocrystals

In this work we report on temperature-dependent photoluminescence measurements (15–300 K), which have allowed probing radiative transitions and understanding of the appearance of various transitions. We further demonstrate that transitions associated with oxide in SiNCs show characteristic vibronic peaks that vary with surface characteristics. In particular we study differences and similarities between silicon nanocrystals (SiNCs) derived from porous silicon and SiNCs that were surface-treated using a radio-frequency (RF) microplasma system.

Mapping of Defects in Individual Silicon Nanocrystals Using Real-Space Spectroscopy

The photophysical properties of silicon semiconductor nanocrystals (SiNCs) are extremely sensitive to the presence of surface chemical defects, many of which are easily produced by oxidation under ambient conditions. The diversity of chemical structures of such defects and the lack of tools capable of probing individual defects continue to impede understanding of the roles of these defects in SiNC photophysics. We use scanning tunneling spectroscopy to study the impact of surface defects on the electronic structures of hydrogen-passivated SiNCs supported on the Au(111) surface. Spatial maps of the local electronic density of states (LDOS) produced by our measurements allowed us to identify locally enhanced defect-induced states as well as quantum-confined states delocalized throughout the SiNC volume. We use theoretical calculations to show that the LDOS spectra associated with the observed defects are attributable to Si-O-Si bridged oxygen or Si-OH surface defects.

Size-Dependent Exciton Formation Dynamics in Colloidal Silicon Quantum Dots

We report size-dependent exciton formation dynamics within colloidal silicon quantum dots (Si QDs) using time-resolved terahertz (THz) spectroscopy measurements. THz photoconductivity measurements are used to distinguish the initially created hot carriers from excitons that form at later times. At early pump/probe delays, the exciton formation dynamics are revealed by the temporal evolution of the THz transmission. We find an increase in the exciton formation time, from ∼500 to ∼900 fs, as the Si QD diameter is reduced from 7.3 to 3.4 nm and all sizes exhibit slower hot-carrier relaxation times compared to bulk Si. In addition, we determine the THz absorption cross section at early delay times is proportional to the carrier mobility while at later delays is proportional to the exciton polarizability, αX. We extract a size-dependent αX and find an ∼r(4) dependence, consistent with previous reports for quantum-confined excitons in CdSe, InAs, and PbSe QDs. The observed slowing in exciton formation time for smaller Si QDs is attributed to decreased electron-phonon coupling due to increased quantum confinement. These results experimentally verify the modification of hot-carrier relaxation rates by quantum confinement in Si QDs, which likely plays a significant role in the high carrier multiplication efficiency observed in these nanomaterials.

Silicon monoxide--a convenient precursor for large scale synthesis of near infrared emitting monodisperse silicon nanocrystals

While silicon nanocrystals (ncSi) embedded in silicon dioxide thin films have been intensively studied in physics, the potential of batch synthesis of silicon nanocrystals from the solid-state disproportionation of SiO powder has not drawn much attention in chemistry. Herein we describe some remarkable effects observed in the diffraction, microscopy and spectroscopy of SiO powder upon thermal processing in the temperature range 850-1100 °C. Quantum confinement effects and structural changes of the material related to the size of the silicon nanocrystals nucleated and grown in this way were established by Photoluminescence (PL), Raman, FTIR and UV-Visible spectroscopy, PXRD and STEM, pinpointing that the most significant disproportionation transformations happened in the temperature range between 900 and 950 °C. With this know-how a high yield synthesis was developed that produced polydispersions of decyl-capped, hexane-soluble silicon nanocrystals predominantly with near infrared (NIR) PL. Using size-selective precipitation, these polydispersions were separated into monodisperse fractions, which allowed their PL absolute quantum yield (AQY) to be studied as a function of silicon nanocrystal size. This investigation yielded volcano-shaped plots for the AQY confirming the most efficient PL wavelength for ncSi to be located at around 820-830 nm, which corresponded to a size of 3.5-4.0 nm. This work provides opportunities for applications of size-selected near infrared emitting silicon nanocrystals in biomedical imaging and photothermal therapy.

Surface plasmon enhanced photoluminescence from porous silicon nanowires decorated with gold nanoparticles

About 8-fold photoluminescence enhancement is realized in porous Si nanowires via coupling with the surface plasmon of Au nanoparticles.

Immunoassay for tumor markers in human serum based on Si nanoparticles and SiC@Ag SERS-active substrate

An immunoassay protocol is described to detect tumor markers in human serum based on a sandwich structure consisting of nano-Si immune probes and SiC@Ag SERS-active immune substrate.

White light emission and optical gains from a Si nanocrystal thin film

We report a Si nanocrystal thin film consisting of free-standing Si nanocrystals, which can emit white light and show positive optical gains for its red, green and blue (RGB) components under ultraviolet excitation. Si nanocrystals with ϕ = 2.31 ± 0.35 nm were prepared by chemical etching of Si powder, followed by filtering. After being mixed with SiO2 sol-gel and thermally annealed, a broadband photoluminescence (PL) from the thin film was observed. The RGB ratio of the PL can be tuned by changing the annealing temperature or atmosphere, which is 1.00/3.26/4.59 for the pure white light emission. The origins of the PL components could be due to differences in oxygen-passivation degree for Si nanocrystals. The results may find applications in white-light Si lasing and Si lighting.

Tunability Limit of Photoluminescence in Colloidal Silicon Nanocrystals

Luminescent silicon nanocrystals (Si NCs) have attracted tremendous research interest. Their size dependent photoluminescence (PL) shows great promise in various optoelectronic and biomedical applications and devices. However, it remains unclear why the exciton emission is limited to energy below 2.1 eV, no matter how small the nanocrystal is. Here we interpret a nanosecond transient yellow emission band at 590 nm (2.1 eV) as a critical limit of the wavelength tunability in colloidal silicon nanocrystals. In the “large size” regime (d > ~3 nm), quantum confinement dominantly determines the PL wavelength and thus the PL peak blue shifts upon decreasing the Si NC size. In the “small size” regime (d < ~2 nm) the effect of the yellow band overwhelms the effect of quantum confinement with distinctly increased nonradiative trapping. As a consequence, the photoluminescence peak does not exhibit any additional blue shift and the quantum yield drops abruptly with further decreasing the size of the Si NCs. This finding confirms that the PL originating from the quantum confined core states can only exist in the red/near infrared with energy below 2.1 eV; while the blue/green PL originates from surface related states and exhibits nanosecond transition.

Enhancement of electroluminescence from embedded Si quantum dots/SiO2multilayers film by localized-surface-plasmon and surface roughening

In this paper, we prepared a novel structure to enhance the electroluminescence intensity from Si quantum dots/SiO₂multilayers. An amorphous Si/SiO₂ multilayer film was fabricated by plasma-enhanced chemical vapor deposition on a Pt nanoparticle (NP)-coated Si nanopillar array substrate. By thermal annealing, an embedded Si quantum dot (QDs)/SiO₂ multilayer film was obtained. The result shows that electroluminescence intensity was significantly enhanced. And, the turn-on voltage of the luminescent device was reduced to 3 V. The enhancement of the light emission is due to the resonance coupling between the localized-surface-plasmon (LSP) of Pt NPs and the band-gap emission of Si QDs/SiO₂ multilayers. The other factors were the improved absorption of excitation light and the increase of light extraction ratio by surface roughening structures. These excellent characteristics are promising for silicon-based light-emitting applications.

Raman study of laser-induced heating effects in free-standing silicon nanocrystals

This paper demonstrates that free-standing silicon nanocrystals (Si NCs) have significantly different thermal conductivity properties compared to Si NCs embedded in a host matrix. The temperatures of Si NCs under laser illumination have been determined by measuring the ratio of the Anti-Stokes to Stokes intensities of the first order Si-Si transverse optical (TO) phonon mode. It is found that large free-standing Si NCs are easily heated up to ∼953 K by the laser light. The laser heating effects are reversible to a large extent, however the nature of the free-standing Si NCs is slightly modified after intensive illumination. The free-standing Si NCs can even be easily melted when exposed to a well-focused laser beam. Under these conditions, the blackbody radiation of the heated Si NCs starts to compete with the detected Raman signals. A simplified model of the heating effects is proposed to study the size dependence of the heated free-standing Si NCs with increasing laser power. It is concluded that the huge red-shift of the Si-Si TO mode observed under intensive laser illumination originates from laser-induced heating effects. In contrast, under similar illumination conditions Si NCs embedded in matrixes are hardly heated due to better thermal conductivity.

Temperature and magnetic-field dependence of radiative decay in colloidal germanium quantum dots

We conduct spectroscopic and theoretical studies of photoluminescence (PL) from Ge quantum dots (QDs) fabricated via colloidal synthesis. The dynamics of late-time PL exhibit a pronounced dependence on temperature and applied magnetic field, which can be explained by radiative decay involving two closely spaced, slowly emitting exciton states. In 3.5 nm QDs, these states are separated by ∼1 meV and are characterized by ∼82 μs and ∼18 μs lifetimes. By using a four-band formalism, we calculate the fine structure of the indirect band-edge exciton arising from the electron-hole exchange interaction and the Coulomb interaction of the Γ-point hole with the anisotropic charge density of the L-point electron. The calculations suggest that the observed PL dynamics can be explained by phonon-assisted recombination of excitons thermally distributed between the lower-energy "dark" state with the momentum projection J = ± 2 and a higher energy "bright" state with J = ± 1. A fairly small difference between lifetimes of these states is due to their mixing induced by the exchange term unique to crystals with a highly symmetric cubic lattice such as Ge.

Resonance Raman and excitation energy dependent charge transfer mechanism in halide-substituted hybrid perovskite solar cells

Organo-metal halide perovskites (OMHPs) are materials with attractive properties for optoelectronics. They made a recent introduction in the photovoltaics world by methylammonium (MA) lead triiodide and show remarkably improved charge separation capabilities when chloride and bromide are added. Here we show how halide substitution in OMHPs with the nominal composition CH3NH3PbI2X, where X is I, Br, or Cl, influences the morphology, charge quantum yield, and local interaction with the organic MA cation. X-ray diffraction and photoluminescence data demonstrate that halide substitution affects the local structure in the OMHPs with separate MAPbI3 and MAPbCl3 phases. Raman spectroscopies as well as theoretical vibration calculations reveal that this at the same time delocalizes the charge to the MA cation, which can liberate the vibrational movement of the MA cation, leading to a more adaptive organic phase. The resonance Raman effect together with quantum chemical calculations is utilized to analyze the change in charge transfer mechanism upon electronic excitation and gives important clues for the mechanism of the much improved photovoltage and photocurrent also seen in the solar cell performance for the materials when chloride compounds are included in the preparation.

Size-Dependent Photon Emission from Organometal Halide Perovskite Nanocrystals Embedded in an Organic Matrix

In recent years, organometal halide perovskite materials have attracted significant research interest in the field of optoelectronics. Here, we introduce a simple and low-temperature route for the formation of self-assembled perovskite nanocrystals in a solid organic matrix. We demonstrate that the size and photoluminescence peak of the perovskite nanocrystals can be tuned by varying the concentration of perovskite in the matrix material. The physical origin of the blue shift of the perovskite nanocrystals’ emission compared to its bulk phase is also discussed.

Carrier multiplication in silicon nanocrystals: ab initio results

One of the most important goals in the field of renewable energy is the development of original solar cell schemes employing new materials to overcome the performance limitations of traditional solar cell devices. Among such innovative materials, nanostructures have emerged as an important class of materials that can be used to realize efficient photovoltaic devices. When these systems are implemented into solar cells, new effects can be exploited to maximize the harvest of solar radiation and to minimize the loss factors. In this context, carrier multiplication seems one promising way to minimize the effects induced by thermalization loss processes thereby significantly increasing the solar cell power conversion. In this work we analyze and quantify different types of carrier multiplication decay dynamics by analyzing systems of isolated and coupled silicon nanocrystals. The effects on carrier multiplication dynamics by energy and charge transfer processes are also discussed.

Switching-on quantum size effects in silicon nanocrystals

The size-dependence of the absolute luminescence quantum yield of size-separated silicon nanocrystals reveals a "volcano" behavior, which switches on around 5 nm, peaks at near 3.7-3.9 nm, and decreases thereafter. These three regions respectively define: i) the transition from bulk to strongly quantum confined emissive silicon, ii) increasing confinement enhancing radiative recombination, and iii) increasing contributions favoring non-radiative recombination.

Nanodiamonds and silicon quantum dots: ultrastable and biocompatible luminescent nanoprobes for long-term bioimaging

Ultra-stability and low-toxicity of silicon quantum dots and fluorescent nanodiamonds for long-termin vitroandin vivobioimaging are demonstrated.

Recent advances in energy transfer in bulk and nanoscale luminescent materials: from spectroscopy to applications

We discuss optical energy transfer involving ions, QDs, molecules etc., together with the relevant applications in different areas.

The defect nature of photoluminescence from a porous silicon nanowire array

The orange luminescence in porous Si nanowires prepared by metal-assisted etching is of defect nature and can be assigned to donor–acceptor pair (DAP)-like recombination.

Intriguing properties of unusual silicon nanocrystals

Optimized structures of A: empty Si₁₈H₁₂Si; B: Si₁₉H₁₂, the 19^th Si atom situated in the center of the lattice structure, C: Si₁₈GeH₁₂, Ge atom situated in the center of the lattice structure.

The optical response of nanoclusters under confinement

We report the optical properties of metallic and semiconductor nanoclusters with various sizes as a function of confinement using real-space time dependent density functional theory (TDDFT).

Charge transfer state emission dynamics in blue-emitting functionalized silicon nanocrystals

Time-resolved photoluminescence spectroscopy reveals a charge transfer state dynamics responsible for the size-independent blue emission observed from dodecylamine and ammonia functionalized silicon nanocrystals.

Pseudo-direct bandgap transitions in silicon nanocrystals: effects on optoelectronics and thermoelectrics

While silicon nanostructures are extensively used in electronics, the indirect bandgap of silicon poses challenges for optoelectronic applications like photovoltaics and light emitting diodes (LEDs). Here, we show that size-dependent pseudo-direct bandgap transitions in silicon nanocrystals dominate the interactions between (photoexcited) charge carriers and phonons, and hence the optoelectronic properties of silicon nanocrystals. Direct measurements of the electronic density of states (DOS) for different sized silicon nanocrystals reveal that these pseudo-direct transitions, likely arising from the nanocrystal surface, can couple with the quantum-confined silicon states. Moreover, we demonstrate that since these transitions determine the interactions of charge carriers with phonons, they change the light emission, absorption, charge carrier diffusion and phonon drag (Seebeck coefficient) in nanoscaled silicon semiconductors. Therefore, these results can have important implications for the design of optoelectronics and thermoelectric devices based on nanostructured silicon.

Tailoring the Spectroscopic Properties of Semiconductor Nanowires via Surface-Plasmon-Based Optical Engineering

Semiconductor nanowires, due to their unique electronic, optical, and chemical properties, are firmly placed at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics arises due to the enhanced light-matter interactions at the nanoscale and coupling of optical modes to electronic resonances. Furthermore, confinement of light can be taken to new extremes via coupling to the surface plasmon modes of metal nanostructures integrated with nanowires, leading to interesting physical phenomena. This Perspective will examine how the optical properties of semiconductor nanowires can be altered via their integration with highly confined plasmonic nanocavities that have resulted in properties such as orders of magnitude faster and more efficient light emission and lasing. The use of plasmonic nanocavities for tailored optical absorption will also be discussed in order to understand and engineer fundamental optical properties of these hybrid systems along with their potential for novel applications, which may not be possible with purely dielectric cavities.

Nanoscale carrier multiplication mapping in a Si diode

Carrier multiplication (CM), the creation of electron-hole pairs from an excited electron, has been investigated in a silicon p-n junction by multiple probe scanning tunneling microscopy. The technique enables an unambiguous determination of the quantum yield based on the direct measurement of both electron and hole currents that are generated by hot tunneling electrons. The combined effect of impact ionization, carrier diffusion, and recombination is directly visualized from the spatial mapping of the CM efficiency. Atomically well-ordered areas of the p-n junction surface sustain the highest CM rate, demonstrating the key role of the surface in reaching high yield.

Temperature-dependent photoluminescence in light-emitting diodes

Temperature-dependent photoluminescence (TDPL), one of the most effective and powerful optical characterisation methods, is widely used to investigate carrier transport and localized states in semiconductor materials. Resonant excitation and non-resonant excitation are the two primary methods of researching this issue. In this study, the application ranges of the different excitation modes are confirmed by analysing the TDPL characteristics of GaN-based light-emitting diodes. For resonant excitation, the carriers are generated only in the quantum wells, and the TDPL features effectively reflect the intrinsic photoluminescence characteristics within the wells and offer certain advantages in characterising localized states and the quality of the wells. For non-resonant excitation, both the wells and barriers are excited, and the carriers that drift from the barriers can contribute to the luminescence under the driving force of the built-in field, which causes the existing equations to become inapplicable. Thus, non-resonant excitation is more suitable than resonant excitation for studying carrier transport dynamics and evaluating the internal quantum efficiency. The experimental technique described herein provides fundamental new insights into the selection of the most appropriate excitation mode for the experimental analysis of carrier transport and localized states in p-n junction devices.

Tailoring light-matter coupling in semiconductor and hybrid-plasmonic nanowires

Understanding interactions between light and matter is central to many fields, providing invaluable insights into the nature of matter. In its own right, a greater understanding of light-matter coupling has allowed for the creation of tailored applications, resulting in a variety of devices such as lasers, switches, sensors, modulators, and detectors. Reduction of optical mode volume is crucial to enhancing light-matter coupling strength, and among solid-state systems, self-assembled semiconductor and hybrid-plasmonic nanowires are amenable to creation of highly-confined optical modes. Following development of unique spectroscopic techniques designed for the nanowire morphology, carefully engineered semiconductor nanowire cavities have recently been tailored to enhance light-matter coupling strength in a manner previously seen in optical microcavities. Much smaller mode volumes in tailored hybrid-plasmonic nanowires have recently allowed for similar breakthroughs, resulting in sub-picosecond excited-state lifetimes and exceptionally high radiative rate enhancement. Here, we review literature on light-matter interactions in semiconductor and hybrid-plasmonic monolithic nanowire optical cavities to highlight recent progress made in tailoring light-matter coupling strengths. Beginning with a discussion of relevant concepts from optical physics, we will discuss how our knowledge of light-matter coupling has evolved with our ability to produce ever-shrinking optical mode volumes, shifting focus from bulk materials to optical microcavities, before moving on to recent results obtained from semiconducting nanowires.

Laser-induced greenish-blue photoluminescence of mesoporous silicon nanowires

Solid silicon nanowires and their luminescent properties have been widely studied, but lesser is known about the optical properties of mesoporous silicon nanowires (mp-SiNWs). In this work, we present a facile method to generate greenish-blue photoluminescence (GB-PL) by fast scanning a focused green laser beam (wavelength of 532 nm) on a close-packed array of mp-SiNWs to carry out photo-induced chemical modification. The threshold of laser power is 5 mW to excite the GB-PL, whose intensity increases with laser power in the range of 5–105 mW. The quenching of GB-PL comes to occur beyond 105 mW. The in-vacuum annealing effectively excites the GB-PL in the pristine mp-SiNWs and enhances the GB-PL of the laser-modified mp-SiNWs. A complex model of the laser-induced surface modification is proposed to account for the laser-power and post-annealing effect. Moreover, the fast scanning of focused laser beam enables us to locally tailor mp-SiNWs en route to a wide variety of micropatterns with different optical functionality, and we demonstrate the feasibility in the application of creating hidden images.

Silicon quantum dots: surface matters

Silicon quantum dots (SiQDs) hold great promise for many future technologies. Silicon is already at the core of photovoltaics and microelectronics, and SiQDs are capable of efficient light emission and amplification. This is crucial for the development of the next technological frontiers-silicon photonics and optoelectronics. Unlike any other quantum dots (QDs), SiQDs are made of non-toxic and abundant material, offering one of the spectrally broadest emission tunabilities accessible with semiconductor QDs and allowing for tailored radiative rates over many orders of magnitude. This extraordinary flexibility of optical properties is achieved via a combination of the spatial confinement of carriers and the strong influence of surface chemistry. The complex physics of this material, which is still being unraveled, leads to new effects, opening up new opportunities for applications. In this review we summarize the latest progress in this fascinating research field, with special attention given to surface-induced effects, such as the emergence of direct bandgap transitions, and collective effects in densely packed QDs, such as space separated quantum cutting.

A complex study of the fast blue luminescence of oxidized silicon nanocrystals: the role of the core

Silicon nanocrystals (SiNCs) smaller than 5 nm are a material with strong visible photoluminescence (PL). However, the physical origin of the PL, which, in the case of oxide-passivated SiNCs, is typically composed of a slow-decaying red-orange band (S-band) and of a fast-decaying blue-green band (F-band), is still not fully understood. Here we present a physical interpretation of the F-band origin based on the results of an experimental study, in which we combine temperature (4-296 K), temporally (picosecond resolution) and spectrally resolved luminescence spectroscopy of free-standing oxide-passivated SiNCs. Our complex study shows that the F-band red-shifts only by 35 meV with increasing temperature, which is almost 6 times less than the red-shift of the S-band in a similar temperature range. In addition, the F-band characteristic decay time obtained from a stretched-exponential fit decreases only slightly with increasing temperature. These data strongly suggest that the F-band arises from the core-related quasi-direct radiative recombination governed by slowly thermalizing photoholes.

Silicon nanostructures for photonics and photovoltaics

Silicon has long been established as the material of choice for the microelectronics industry. This is not yet true in photonics, where the limited degrees of freedom in material design combined with the indirect bandgap are a major constraint. Recent developments, especially those enabled by nanoscale engineering of the electronic and photonic properties, are starting to change the picture, and some silicon nanostructures now approach or even exceed the performance of equivalent direct-bandgap materials. Focusing on two application areas, namely communications and photovoltaics, we review recent progress in silicon nanocrystals, nanowires and photonic crystals as key examples of functional nanostructures. We assess the state of the art in each field and highlight the challenges that need to be overcome to make silicon a truly high-performing photonic material.

Direct observation of quantum-confined graphene-like states and novel hybrid states in graphene oxide by transient spectroscopy

Quantum-confined graphene-like electronic states are directly observed in graphene oxide and photothermally reduced graphene oxide via transient spectroscopy. An unexpected novel hybrid state arising from amorphous carbon-like peripheral structure with high sp(3) /sp(2) carbon ratio in close vicinity of confined graphene-like states is found commonly existent in various carbon nanomaterials, including graphene oxide, graphene quantum dots, and carbon dots.

Nanotechnologies for noninvasive measurement of drug release

A wide variety of chemotherapy and radiotherapy agents are available for treating cancer, but a critical challenge is to deliver these agents locally to cancer cells and tumors while minimizing side effects from systemic delivery. Nanomedicine uses nanoparticles with diameters in the range of ∼1-100 nm to encapsulate drugs and target them to tumors. The nanoparticle enhances local drug delivery efficiency to the tumors via entrapment in leaky tumor vasculature, molecular targeting to cells expressing cancer biomarkers, and/or magnetic targeting. In addition, the localization can be enhanced using triggered release in tumors via chemical, thermal, or optical signals. In order to optimize these nanoparticle drug delivery strategies, it is important to be able to image where the nanoparticles distribute and how rapidly they release their drug payloads. This Review aims to evaluate the current state of nanotechnology platforms for cancer theranostics (therapeutic and diagnostic particles) that are capable of noninvasive measurement of release kinetics.

Ultrafast biexciton spectroscopy in semiconductor quantum dots: evidence for early emergence of multiple-exciton generation

Understanding multiple-exciton generation (MEG) in quantum dots (QDs) requires in-depth measurements of transient exciton dynamics. Because MEG typically faces competing ultrafast energy-loss intra-band relaxation, it is of central importance to investigate the emerging time-scale of the MEG kinetics. Here, we present ultrafast spectroscopic measurements of the MEG in PbS QDs via probing the ground-state biexciton transients. Specifically, we directly compare the biexciton spectra with the single-exciton ones before and after the intra-band relaxation. Early emergence of MEG is evidenced by observing transient Stark shift and quasi-instantaneous linewidth broadening, both of which take place before the intra-band relaxation. Photon-density-dependent study shows that the broadened biexciton linewidth strongly depends on the MEG-induced extra-exciton generation. Long after the intra-band relaxation, the biexciton broadening is small and the single-exciton state filling is dominant.

Biocompatible fluorescent silicon nanocrystals for single-molecule tracking and fluorescence imaging

Fluorescence microscopy is used extensively in cell-biological and biomedical research, but it is often plagued by three major problems with the presently available fluorescent probes: photobleaching, blinking, and large size. We have addressed these problems, with special attention to single-molecule imaging, by developing biocompatible, red-emitting silicon nanocrystals (SiNCs) with a 4.1-nm hydrodynamic diameter. Methods for producing SiNCs by simple chemical etching, for hydrophilically coating them, and for conjugating them to biomolecules precisely at a 1:1 ratio have been developed. Single SiNCs neither blinked nor photobleached during a 300-min overall period observed at video rate. Single receptor molecules in the plasma membrane of living cells (using transferrin receptor) were imaged for ≥10 times longer than with other probes, making it possible for the first time to observe the internalization process of receptor molecules at the single-molecule level. Spatial variations of molecular diffusivity in the scale of 1-2 µm, i.e., a higher level of domain mosaicism in the plasma membrane, were revealed.

Giant photoluminescence emission in crystalline faceted Si grains

Empowering an indirect band-gap material like Si with optical functionalities, firstly light emission, represents a huge advancement constantly pursued in the realization of any integrated photonic device. We report the demonstration of giant photoluminescence (PL) emission by a newly synthesized material consisting of crystalline faceted Si grains (fg-Si), a hundred nanometer in size, assembled in a porous and columnar configuration, without any post processing. A laser beam with wavelength 632.8 nm locally produce such a high temperature, determined on layers of a given thickness by Raman spectra, to induce giant PL radiation emission. The optical gain reaches the highest value ever, 0.14 cm/W, representing an increase of 3 orders of magnitude with respect to comparable data recently obtained in nanocrystals. Giant emission has been obtained from fg-Si deposited either on glass or on flexible, low cost, polymeric substrate opening the possibility to fabricate new devices.

Assessing clinical prospects of silicon quantum dots: studies in mice and monkeys

Silicon nanocrystals can provide the outstanding imaging capabilities of toxic heavy-metal-based quantum dots without employing heavy metals and have potential for rapid progression to the clinic. Understanding the toxicity of silicon quantum dots (SiQDs) is essential to realizing this potential. However, existing studies of SiQD biocompatibility are limited, with no systematic progression from small-animal to large-animal studies that are more clinically relevant. Here, we test the response of both mice and monkeys to high intravenous doses of a nanoconstruct created using only SiQDs and FDA-approved materials. We show that (1) neither mice nor monkeys show overt signs of toxicity reflected in their behavior, body mass, or blood chemistry, even at a dose of 200 mg/kg. (2) This formulation did not biodegrade as expected. Elevated levels of silicon were present in the liver and spleen of mice three months post-treatment. (3) Histopathology three months after treatment showed adverse effects of the nanoformulation in the livers of mice, but showed no such effects in monkeys. This investigation reveals that the systemic reactions of the two animal models may have some differences and there are no signs of toxicity clearly attributable to silicon quantum dots.

Temperature dependence of time-resolved photoluminescence in closely packed alignment of Si nanodisks with SiC barriers

We study the temperature dependence of time-resolved photoluminescence (PL) in closely packed alignment of Si nanodisks (NDs) with SiC barriers, fabricated by neutral beam etching using bio-nano-templates. The PL time profile indicates three decaying components with different decay times. The PL intensities in the two slower decaying components depend strongly on temperature. These temperature dependences of the PL intensity can be quantitatively explained by a three-level model with thermal activation energies of 410 and 490 meV, depending on the PL components. The activation energies explain PL quenching due to thermal escape of electrons from individual NDs. This thermal escape affects the PL decay times above 250 K. Dark states of photo-excited carriers originating from the separate localization of electron and hole into different NDs are elucidated with the localization energies of 70 and 90 meV. In contrast, the dynamics of the fastest PL decaying component is dominated by electron tunneling among NDs, where the PL intensity and decay time are constant for temperature.

Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix

Simple processes for the preparation of semiconductor quantum dot lattices embedded in dielectric amorphous matrices play an important role in various nanotechnology applications. Of particular interest are quantum dot lattices with properties that differ significantly in different directions parallel to the material surface. Here, a simple method is demonstrated for the fabrication of an anisotropic lattice of Ge quantum dots in an amorphous Al2O3matrix by a self-assembly process. A specific deposition geometry with an oblique incidence of the Ge and Al2O3adparticles was used during magnetron sputtering deposition to achieve the desired anisotropy. The observed Ge quantum dot ordering is explained by a combination of directional diffusion of adparticles from the Ge and Al2O3targets and a shadowing process which occurs during deposition as a result of the specific surface morphology. The prepared material shows a strong anisotropy of the electrical conductivity in different directions parallel to the sample surface.

Surface-engineered silicon nanocrystals

Quantum confined silicon nanocrystals (Si-ncs) exhibit intriguing properties due to silicon's indirect bandgap and their highly reactive surfaces. In particular the interplay of quantum confinement with surface effects reveals a complex scenario, which can complicate the interpretation of Si-nc properties and prediction of their corresponding behaviour. At the same time, the complexity and interplay of the different mechanisms in Si-ncs offer great opportunities with characteristics that may not be achievable with other nano-systems. In this context, a variety of carefully surface-engineered Si-ncs are highly desirable both for improving our understanding of Si-nc photo-physics and for their successful integration in application devices. Here we firstly highlight a selection of theoretical efforts and experimental surface engineering approaches and secondly we focus on recent surface engineering results that have utilized novel plasma-liquid interactions.

On-demand hydrogen generation using nanosilicon: splitting water without light, heat, or electricity

We demonstrate that nanosize silicon (~10 nm diameter) reacts with water to generate hydrogen 1000 times faster than bulk silicon, 100 times faster than previously reported Si structures, and 6 times faster than competing metal formulations. The H(2) production rate using 10 nm Si is 150 times that obtained using 100 nm particles, dramatically exceeding the expected effect of increased surface to volume ratio. We attribute this to a change in the etching dynamics at the nanoscale from anisotropic etching of larger silicon to effectively isotropic etching of 10 nm silicon. These results imply that nanosilicon could provide a practical approach for on-demand hydrogen production without addition of heat, light, or electrical energy.

Mutlicolor electroluminescent Si quantum dots embedded in SiOx thin film MOSLED with 2.4% external quantum efficiency

The enhanced recombination and external quantum efficiency (EQE) of the multi-color metal-oxide-semiconductor light-emitting diodes (MOSLEDs) made on the SiOx film with buried Si quantum dots (Si-QDs) grown by plasma-enhanced chemical vapor deposition are demonstrated. By shrinking Si-QD size from 4.2 to 1.8 nm with increasing RF plasma power from 20 to 50 W, these MOSLEDs enhance the maximal electroluminescent (EL) power from 0.1 to 0.7 μW. This is mainly attributed to the enhanced recombination rate by enlarging the overlap between electron and hole wave-functions. As evidence, the photoluminescent lifetime is significantly shortened from 5 µs to 0.31µs due to the enhanced direct recombination in smaller Si-QDs. The corresponding power-current slope and EQE are observed to increase from 0.09 to 5.7 mW/A and from 1.9 × 10(-5) to 2.4%, respectively. The EL enhancement originates from shorter wavelength and stronger carrier confinement within Si-QDs with smaller size, as confirmed by the increased barrier height at the ITO/SiOx:Si-QD interface from 1.05 to 3.62 eV. The smaller and denser Si-QDs result in a current endurance to operate the MOSLED at breakdown edge with highest power conversion efficiency, thus providing a maximal blue-light EL power at 0.7 μW with the highest EQE of 2.4%.

Silicon coupled with plasmon nanocavity generates bright visible hot-luminescence

Due to limitations in device speed and performance of silicon-based electronics, silicon optoelectronics has been extensively studied to achieve ultrafast optical-data processing^1-3. However, the biggest challenge has been to develop an efficient silicon-based light source since indirect band-gap of silicon gives rise to extremely low emission efficiency. Although light emission in quantum-confined silicon at sub-10 nm lengthscales has been demonstrated^4-7, there are difficulties in integrating quantum structures with conventional electronics^8,9. It is desirable to develop new concepts to obtain emission from silicon at lengthscales compatible with current electronic devices (20-100 nm), which therefore do not utilize quantum-confinement effects. Here, we demonstrate an entirely new method to achieve bright visible light emission in "bulk-sized" silicon coupled with plasmon nanocavities from non-thermalized carrier recombination. Highly enhanced emission quantum efficiency (>1%) in plasmonic silicon, along with its size compatibility with present silicon electronics, provides new avenues for developing monolithically integrated light-sources on conventional microchips.

Picosecond carrier dynamics induced by coupling of wavefunctions in a Si-nanodisk array fabricated by neutral beam etching using bio-nano-templates

The picosecond carrier dynamics in a closely packed Si-nanodisk (Si-ND) array with ultrathin potential barrier fabricated by neutral beam etching using bio-nano-templates was investigated by time-resolved photoluminescence (PL). The PL decay curves were analyzed as a function of photon energy by the global fitting method. We show three spectral components with different decay times, where the systematic energy differences of the spectral peaks are clarified: 2.03 eV for the fastest decaying component with a decay time τ = 40 ps, 2.02 eV for τ = 300 ps, and 2.00 eV for τ = 1.6 ns. These energy separations ranging from 10 to 30 meV among the emissive states can be attributed to the coupling of wavefunctions of carriers between neighboring NDs.

Microscopic origin of the fast blue-green luminescence of chemically synthesized non-oxidized silicon quantum dots

The microscopic origin of the bright nanosecond blue-green photoluminescence (PL), frequently reported for synthesized organically terminated Si quantum dots (Si-QDs), has not been fully resolved, hampering potential applications of this interesting material. Here a comprehensive study of the PL from alkyl-terminated Si-QDs of 2-3 nm size, prepared by wet chemical synthesis is reported. Results obtained on the ensemble and those from the single nano-object level are compared, and they provide conclusive evidence that efficient and tunable emission arises due to radiative recombination of electron-hole pairs confined in the Si-QDs. This understanding paves the way towards applications of chemical synthesis for the development of Si-QDs with tunable sizes and bandgaps.

On the origin of photoluminescence in silicon nanocrystals: pressure-dependent structural and optical studies

A lack of consensus persists regarding the origin of photoluminescence in silicon nanocrystals. Here we report pressure-dependences of X-ray diffraction and photoluminescence from alkane-terminated colloidal particles. We determine the diamond-phase bulk modulus, observe multiple phase transitions, and importantly find a systematic photoluminescence red shift that matches the X(conduction)-to-Γ(valence) transition of bulk crystalline silicon. These results, reinforced by calculations, suggest that the efficient photoluminescence, frequently attributed to defects, arises instead from core-states that remain highly indirect despite quantum confinement.

Power-dependent spectral shift of photoluminescence from ensembles of silicon nanocrystals

: Nanocrystals are widely studied for their tunable optical properties, most importantly increased luminescence efficiency and emission energy. Quantum confinement effects are found for many different types of nanocrystals, and these introduce a relation between the emission wavelength and the size of nanocrystals. When ensembles of nanocrystals with a distribution of sizes are studied, this can have profound effects on their luminescence spectra. Here, we show how photoluminescence spectra of ensembles of silicon nanocrystals can shift under different excitation conditions, resulting from differences in absorption cross-section of the individual nanocrystal sizes. This effect, together with the fact that after a pulsed excitation a silicon nanocrystal can only emit a single photon, determines how the distribution of excited nanocrystals changes and leads to the spectral shift for different excitation powers. Next to this effect, the influence of different radiative rates in such ensembles is also addressed. These notions are important for the interpretation of photoluminescence data for silicon nanocrystals but can be extended to any nanoparticle system comprising size-distributed ensembles.