Dielectrics for Two-Dimensional Transition-Metal Dichalcogenide Applications

Despite over a decade of intense research efforts, the full potential of two-dimensional transition-metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications. Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.

Morphology Engineering of Hybrid Supercapacitor Electrodes from Hierarchical Stem-like Carbon Networks with Flower-like MoS2 Structures

There is a critical need to develop high-performance supercapacitors that can complement and even rival batteries for energy storage. This work introduces a strategy to drastically enhance the energy storage performance of a supercapacitor by engineering electrode morphologies with ternary composites offering distinct benefits for the energy storage application. The electrodes were fabricated with conductive networks of carbon nanotubes (CNTs) coated with a zeolitic imidazole framework (ZIF) for high ion diffusivity and ion-accumulating molybdenum disulfide (MoS₂) with various morphologies. These include flower-like (fMoS₂), stacked-plate (pMoS₂), and exfoliated-flake (eMoS₂) structures from topochemical synthesis. CNT-ZIF-fMoS₂ demonstrates an excellent energy density, reaching almost 80 Wh/kg, and a maximum power density of approximately 3000 W/kg in a half-cell. This is far superior to the electrodes containing pMoS₂ and eMoS₂ and attributed to the increased surface area and the faradaic reactivity offered by fMoS₂. Additionally, the CNT-ZIF-fMoS₂ electrode demonstrates exceptional stability with an ∼78% of capacitance retention over 10,000 cycles. This work suggests that the electrode morphologies can dominate the energy storage behaviors and that the heteromaterial approach may be crucial in designing next-generation supercapacitors.

Nature-Inspired Design of Nano-Architecture-Aligned Ni5P4-Ni2P/NiS Arrays for Enhanced Electrocatalytic Activity of Hydrogen Evolution Reaction (HER)

The projection of developing sustainable and cost-efficient electrocatalysts for hydrogen production is booming. However, the full potential of electrocatalysts fabricated from earth-abundant metals has yet to be exploited to replace Pt-group metals due to inadequate efficiency and insufficient design strategies to meet the ever-increasing demands for renewable energies. To improve the electrocatalytic performance, the primary challenge is to optimize the structure and electronic properties by enhancing the intrinsic catalytic activity and expanding the active catalytic surface area. Herein, we report synthesizing a 3D nanoarchitecture of aligned Ni₅P₄-Ni₂P/NiS (plate/nanosheets) using a phospho-sulfidation process. The durability and unique design of prickly pear cactus in desert environments by adsorbing moisture through its extensive surface and ability to bear fruits at the edges of leaves inspire this study to adopt a similar 3D architecture and utilize it to design an efficient heterostructure catalyst for HER activity. The catalyst comprises two compartments of the vertically aligned Ni₅P₄-Ni₂P plates and the NiS nanosheets, resembling the role of leaves and fruits in the prickly pear cactus. The Ni₅P₄-Ni₂P plates deliver charges to the interface areas, and the NiS nanosheets significantly influence H_ad and transfer electrons for the HER activity. Indeed, the synergistic presence of heterointerfaces and the epitaxial NiS nanosheets can substantially improve the catalytic activity compared to nickel phosphide catalysts. Notably, the onset overpotential of the best-modified ternary catalysts exhibits (35 mV) half the potential required for nickel phosphide catalysts. This promising catalyst demonstrates 70 and 115 mV overpotentials to attain current densities of 10 and 100 mA cm^-2, respectively. The obtained Tafel slope is 50 mV dec^-1, and the measured double-layer capacitance from cyclic voltammetry (CV) for the best ternary electrocatalyst is 13.12 mF cm^-2, 3 times more than the nickel phosphide electrocatalyst. Further, electrochemical impedance spectroscopy (EIS) at the cathodic potentials reveals that the lowest charge transfer resistance is linked to the best ternary electrocatalyst, ranging from 430 to 1.75 Ω cm^-2. This improvement can be attributed to the acceleration of the electron exchangeability at the interfaces. Our findings demonstrate that the epitaxial NiS nanosheets expand the active catalytic surface area and simultaneously elevate the intrinsic catalytic activity by introducing heterointerfaces, which leads to accommodating more H_ad at the interfaces.

Amorphization-Modulated Metal Sulfides with Boosted Active Sites and Kinetics for Efficient Enzymatic Colorimetric Biodetection

Colorimetric biosensing has become a popular sensing method for the portable detection of a variety of biomarkers. Artificial biocatalysts can replace traditional natural enzymes in the fields of enzymatic colorimetric biodetection; however, the exploration of new biocatalysts with efficient, stable, and specific biosensing reactions has remained challenging so far. Here, to enhance the active sites and overcome the sluggish kinetics of metal sulfides, the creation of an amorphous RuS₂ (a-RuS₂ ) biocatalytic system is reported, which can dramatically boost the peroxidase-mimetic activity of RuS₂ for the enzymatic detection of diverse biomolecules. Due to the existence of abundant accessible active sites and mildly surface oxidation, the a-RuS₂ biocatalyst displays a twofold V_max value and much higher reaction kinetics/turnover number (1.63 × 10^-2 s^-1 ) compared to that of the crystallized RuS₂ . Noticeably, the a-RuS₂ -based biosensor shows an extremely low detection limit of H₂ O₂ (3.25 × 10^-6 m), l-cysteine (3.39 × 10^-6 m), and glucose (9.84 × 10^-6 m), respectively, thus showing superior detection sensitivity to many currently reported peroxidase-mimetic nanomaterials. This work offers a new path to create highly sensitive and specific colorimetric biosensors in detecting biomolecules and also provides valuable insights for engineering robust enzyme-like biocatalysts via amorphization-modulated design.

Liquid-Metal-Printed Ultrathin Oxides for Atomically Smooth 2D Material Heterostructures

Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOTs), excellent gate control, and low leakage currents. Here, large-area liquid-metal-printed ultrathin Ga₂O₃ dielectrics for 2D electronics and optoelectronics are reported. The atomically smooth Ga₂O₃/WS₂ interfaces enabled by the conformal nature of liquid metal printing are directly visualized. Atomic layer deposition compatibility with high-k Ga₂O₃/HfO₂ top-gate dielectric stacks on a chemical-vapor-deposition-grown monolayer WS₂ is demonstrated, achieving EOTs of ∼1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultrascaled low-power logic circuits. These results show that liquid-metal-printed oxides can bridge a crucial gap in dielectric integration of 2D materials for next-generation nanoelectronics.

Multilayer In-Plane Heterostructures Based on Transition Metal Dichalcogenides for Advanced Electronics

In-plane heterostructures of transition metal dichalcogenides (TMDCs) have attracted much attention for high-performance electronic and optoelectronic devices. To date, mainly monolayer-based in-plane heterostructures have been prepared by chemical vapor deposition (CVD), and their optical and electrical properties have been investigated. However, the low dielectric properties of monolayers prevent the generation of high concentrations of thermally excited carriers from doped impurities. To solve this issue, multilayer TMDCs are a promising component for various electronic devices due to the availability of degenerate semiconductors. Here, we report the fabrication and transport properties of multilayer TMDC-based in-plane heterostructures. The multilayer in-plane heterostructures are formed through CVD growth of multilayer MoS₂ from the edges of mechanically exfoliated multilayer flakes of WSe₂ or Nb_xMo_1-xS₂. In addition to the in-plane heterostructures, we also confirmed the vertical growth of MoS₂ on the exfoliated flakes. For the WSe₂/MoS₂ sample, an abrupt composition change is confirmed by cross-sectional high-angle annular dark-field scanning transmission electron microscopy. Electrical transport measurements reveal that a tunneling current flows at the Nb_xMo_1-xS₂/MoS₂ in-plane heterointerface, and the band alignment is changed from a staggered gap to a broken gap by electrostatic electron doping of MoS₂. The formation of a staggered gap band alignment of Nb_xMo_1-xS₂/MoS₂ is also supported by first-principles calculations.

Metal functionalization of two-dimensional nanomaterials for electrochemical carbon dioxide reduction

With the mechanical exfoliation of graphene in 2004, researchers around the world have devoted significant efforts to the study of two-dimensional (2D) nanomaterials. Nowadays, 2D nanomaterials are being developed into a large family with varieties of structures and derivatives. Due to their fascinating electronic, chemical, and physical properties, 2D nanomaterials are becoming an important type of catalyst for the electrochemical carbon dioxide reduction reaction (CO₂RR). Here, we review the recent progress in electrochemical CO₂RR using 2D nanomaterial-based catalysts. First, we briefly describe the reaction mechanism of electrochemical CO₂ reduction to single-carbon (C₁) and multi-carbon (C₂₊) products. Then, we discuss the strategies and principles for applying metal materials to functionalize 2D nanomaterials, such as graphene-based materials, metal-organic frameworks (MOFs), and transition metal dichalcogenides (TMDs), as well as applications of resultant materials in the electrocatalytic CO₂RR. Finally, we summarize the present research advances and highlight the current challenges and future opportunities of using metal-functionalized 2D nanomaterials in the electrochemical CO₂RR.

Unveiling Charge-Transport Mechanisms in Electronic Devices Based on Defect-Engineered MoS2 Covalent Networks

Device performance of solution-processed 2D semiconductors in printed electronics has been limited so far by structural defects and high interflake junction resistance. Covalently interconnected networks of transition metal dichalcogenides potentially represent an efficient strategy to overcome both limitations simultaneously. Yet, the charge-transport properties in such systems have not been systematically researched. Here, the charge-transport mechanisms of printed devices based on covalent MoS₂ networks are unveiled via multiscale analysis, comparing the effects of aromatic versus aliphatic dithiolated linkers. Temperature-dependent electrical measurements reveal hopping as the dominant transport mechanism: aliphatic systems lead to 3D variable range hopping, unlike the nearest neighbor hopping observed for aromatic linkers. The novel analysis based on percolation theory attributes the superior performance of devices functionalized with π-conjugated molecules to the improved interflake electronic connectivity and formation of additional percolation paths, as further corroborated by density functional calculations. Valuable guidelines for harnessing the charge-transport properties in MoS₂ devices based on covalent networks are provided.

In Situ Porousized MoS2 Nano Islands Enhance HER/OER Bifunctional Electrocatalysis

2D molybdenum disulfide (MoS₂ ) is developed as a potential alternative non-precious metal electrocatalyst for energy conversion. It is well known that 2D MoS₂ has three main phases 2H, 1T, and 1T'. However, the most stable 2H-phase shows poor electrocatalysis in its basal plane, compared with its edge sites. In this work, a facile one-step hydrothermal-driven in situ porousizing of MoS₂ into self-supporting nano islands to maximally expose the edges of MoS₂ grains for efficient utilization of the active stable sites at the edges of MoS₂ is reported. The results show that such active, aggregation-free nano islands greatly enhance MoS₂ 's hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) bifunctional electrocatalytic activities. At a low overpotential of 248 and 300 mV, the porous MoS₂ nano islands can generate a current density of 10 mA cm^-2 in HER and OER, which is much better than typical nanosheet morphology. Surprisingly, the porous MoS₂ nano islands even exhibit better performance than the current commercial RuO₂ catalyst in OER. This discovery will be another effective strategy to promote robust 2H-phase, instead of 1T/1T'-phase, MoS₂ to achieve efficient endurable bifunctional HER/OER, which is expected to further replace precious metal catalysts in industry.

Reconfigurable Two-Dimensional Air-Gap Barristors

Reconfigurable logic circuits implemented by two-dimensional (2D) ambipolar semiconductors provide a prospective solution for the post-Moore era. It is still a challenge for ambipolar nanomaterials to realize reconfigurable polarity control and rectification with a simplified device structure. Here, an air-gap barristor based on an asymmetric stacking sequence of the electrode contacts was developed to resolve these issues. For the 2D ambipolar channel of WSe₂, the barristor can not only be reconfigured as an n- or p-type unipolar transistor but also work as a switchable diode. The air gap around the bottom electrode dominates the reconfigurable behaviors by widening the Schottky barrier here, thus blocking the injection of both electrons and holes. The electrical performances can be improved by optimizing the electrode materials, which achieve an on/off ratio of 10⁴ for the transistor and a rectifying ratio of 10⁵ for the diode. A complementary inverter and a switchable AND/OR logic gate were constructed by using the air-gap barristors as building blocks. This work provides an efficient approach with great potential for low-dimensional reconfigurable electronics.

Investigation of semiconductor properties of Co/Si(111)-7 × 7 by AFM/KPFS

Studies of the physics underlying carrier transport characteristics and band bending of semiconductors are critical for developing new types of devices. In this work, we investigated the physical properties of Co ring-like cluster (RC) reconstruction with a low Co coverage on a Si(111)-7 × 7 surface at atomic resolution by atomic force microscopy/Kelvin probe force microscopy at 78 K. We compared the applied bias dependence of frequency shift between two types of structure: Si(111)-7 × 7 and Co-RC reconstructions. As a result, the accumulation, depletion, and reversion layers were identified in the Co-RC reconstruction by bias spectroscopy. For the first time, we found that Co-RC reconstruction on the Si(111)-7 × 7 surface shows semiconductor properties by Kelvin probe force spectroscopy. The findings of this study are useful for developing new materials for semiconductor devices.

Reversible Electrical Control of Interfacial Charge Flow across van der Waals Interfaces

Bond-free integration of two-dimensional (2D) materials yields van der Waals (vdW) heterostructures with exotic optical and electronic properties. Manipulating the splitting and recombination of photogenerated electron-hole pairs across the vdW interface is essential for optoelectronic applications. Previous studies have unveiled the critical role of defects in trapping photogenerated charge carriers to modulate the photoconductive gain for photodetection. However, the nature and role of defects in tuning interfacial charge carrier dynamics have remained elusive. Here, we investigate the nonequilibrium charge dynamics at the graphene-WS₂ vdW interface under electrochemical gating by operando optical-pump terahertz-probe spectroscopy. We report full control over charge separation states and thus photogating field direction by electrically tuning the defect occupancy. Our results show that electron occupancy of the two in-gap states, presumably originating from sulfur vacancies, can account for the observed rich interfacial charge transfer dynamics and electrically tunable photogating fields, providing microscopic insights for optimizing optoelectronic devices.

Defect engineering of two-dimensional materials for advanced energy conversion and storage

In the global trend towards carbon neutrality, sustainable energy conversion and storage technologies are of vital significance to tackle the energy crisis and climate change. However, traditional electrode materials gradually reach their property limits. Two-dimensional (2D) materials featuring large aspect ratios and tunable surface properties exhibit tremendous potential for improving the performance of energy conversion and storage devices. To rationally control the physical and chemical properties for specific applications, defect engineering of 2D materials has been investigated extensively, and is becoming a versatile strategy to promote the electrode reaction kinetics. Simultaneously, exploring the in-depth mechanisms underlying defect action in electrode reactions is crucial to provide profound insight into structure tailoring and property optimization. In this review, we highlight the cutting-edge advances in defect engineering in 2D materials as well as their considerable effects in energy-related applications. Moreover, the confronting challenges and promising directions are discussed for the development of advanced energy conversion and storage systems.

One-pot synthesis of boron-doped cobalt oxide nanorod coupled with reduced graphene oxide for sodium ion batteries

Heteroatom doping is one of the feasible strategies to improve electrode efficiency. Meanwhile, graphene helps to optimize structure and improve conductivity of the electrode. Here, we synthesized a composite of boron-doped cobalt oxide nanorods coupled with reduced graphene oxide by a one-step hydrothermal method and investigated its electrochemical performance for sodium ion storage. Because of the activated boron and conductive graphene, the assembled sodium-ion battery shows excellent cycling stability with a high initial reversible capacity of 424.8 mAh g^-1, which is maintained as high as 444.2 mAh g^-1 after 50 cycles at a current density of 100 mA g^-1. The electrodes also exhibit excellent rate performance with 270.5 mAh g^-1 at 2000 mA g^-1, and retain 96% of the reversible capacity upon recovery from 100 mA g^-1. This study shows that boron doping can increase the capacity of cobalt oxides and graphene can stabilize structure and improve conductivity of the active electrode material, which are essential for achieving satisfactory electrochemical performance. Therefore, the doping of boron and introduction of graphene may be one of the promising means to optimize the electrochemical performance of anode materials.

Graphene quantum dots: A comprehensive overview

Because of their prospective applications and exceptional features, graphene quantum dots (GQDs) have gotten a lot of recognition as a new class of fluorescent carbon materials. One of the carbon family’s newest superstars is the GQD. Due to its exceptional optoelectrical qualities, it has sparked a lot of curiosity since its debut in 2008. Two of the most important traits are a band gap that is not zero, biocompatibility, and highly changeable characteristics. GQDs have several important characteristics. GQDs have shown potential in a variety of fields, for instance, catalysis, sensing, energy devices, drug delivery, bioimaging, photothermal, and photodynamic therapy. Because this area constantly evolves, it is vital to recognize emerging GQD concerns in the current breakthroughs, primarily since some specific uses and developments in the case of GQDs synthesis have not been thoroughly investigated through previous studies. The current results in the properties, synthesis, as well as benefits of GQDs are discussed in this review study. As per the findings of this research, the GQD’s future investigation is boundless, mainly if the approaching investigation focuses on purifying simplicity and environmentally friendly synthesis, as well as boosting photoluminescence quantum output and manufacturing output of GQDs.

High-Entropy Enhanced Microwave Attenuation in Titanate Perovskites

High-entropy oxides (HEOs), which incorporate multiple-principal cations into single-phase crystals and interact with diverse metal ions, extend the border for available compositions and unprecedented properties. Herein, a high-entropy-stabilized (Ca_0.2 Sr_0.2 Ba_0.2 La_0.2 Pb_0.2 )TiO₃  perovskite is reported, and the effective absorption bandwidth (90% absorption) improves almost two times than that of BaTiO₃ . The results demonstrate that the regulation of entropy configuration can yield significant grain boundaries, oxygen defects, and an ultradense distorted lattice. These characteristics give rise to strong interfacial and defect-induced polarizations, thus synergistically contributing to the dielectric attenuation performance. Moreover, the large strains derived from the strong lattice distortions in the high-entropy perovskite offer varied transport for electron carriers. The high-entropy-enhanced positive/negative charges accumulation around grain boundaries and strain-concentrated location, quantitatively validated by electron holography, results in unusual dielectric polarization loss. This study opens up an effective avenue for designing strong microwave absorption materials to satisfy the increasingly demanding requirements of advanced and integrated electronics. This work also offers a paradigm for improving other interesting properties for HEOs through entropy engineering.

Passivated Interfacial Traps of Monolayer MoS2 with Bipolar Electrical Pulse

Heterogeneous integration of monolayers is an emergent route of spatially combining materials with available platforms for unprecedented properties. A long-standing challenge along this route is to manipulate interfacial configurations of each unit in stacking architecture. A monolayer of transition metal dichalcogenides (TMDs) offers an embodiment of studying interface engineering of integrated systems because optoelectronic performances generally trade off with each other due to interfacial trap states. While ultrahigh photoresponsivity of TMDs phototransistors has been realized, a long response time commonly appears and hinders applications. Here, fundamental processes in excitation and relaxation of the photoresponse are studied and correlated with interfacial traps of the monolayer MoS₂. A mechanism for the onset of saturation photocurrent and the reset behavior in the monolayer photodetector is illustrated based on device performances. Electrostatic passivation of interfacial traps is achieved with the bipolar gate pulse and significantly reduces the response time for photocurrent to reach saturated states. This work paves the way toward fast-speed and ultrahigh-gain devices of stacked two-dimensional monolayers.

Trends in energy and charge transfer in 2D and integrated perovskite heterostructures

Two-dimensional (2D) van der Waals (vdW) heterostructured transition metal dichalcogenides (TMDs) open up new possibilities for a wide range of optoelectronic applications. Interlayer couplings are responsible for several fascinating physics phenomena, which are in addition to the multifunctionalities that have been discovered in the field of optoelectronics. These couplings can influence the overall charge, or the energy transfer processes via stacking, separation, and dielectric angles. This focused review article summarizes the most recent and promising strategies for interlayer exciton emission in 2D or integrated perovskites and TMD heterostructures. These types of devices require a thorough comprehension and effective control of interlayer couplings in order to realize their functionalities and improve performance, which is demonstrated in this article with the energy or charge transfer mechanisms in the individual devices. An ideal platform for examining the interlayer coupling and the related physical processes is provided by a summary of the recent research findings in 2D perovskites and TMDs. Furthermore, it would encourage more investigation into the comprehension and regulation of excitonic effects and the related optoelectronic applications in vdW heterostructures over a broad spectral response range. Finally, the current challenges and prospects are summarized in this paper.

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.

Two-dimensional MBenes with ordered metal vacancies for surface-enhanced Raman scattering

As an emerging class of two-dimensional (2D) materials, MBenes show enormous potential for optoelectronic applications. However, their use in molecular sensing as surface-enhanced Raman scattering (SERS)-active material is unknown. Herein, for the first time, we develop a brand-new high-performance MBene SERS platform. Ordered vacancy-triggered highly sensitive SERS platform with outstanding signal uniformity based on a 2D Mo_4/3B₂ MBene material was designed. The 2D Mo_4/3B₂ MBene presented superior SERS activity to most of the semiconductor SERS substrates, showing a remarkable Raman enhancement factor of 3.88 × 10⁶ and an ultralow detection limit of 1 × 10^-9 M. The underlying SERS mechanism is revealed from systematic experiments and density functional theory calculations that the ultrahigh SERS sensitivity of 2D Mo_4/3B₂ MBene is derived from the efficient photoinduced charge transfer process between MBene substrates and adsorbed molecules. The abundant electronic density of states near the Fermi level of 2D Mo_4/3B₂ MBene enables its Raman enhancement by a factor of 100 000 times higher than that of the bulk MoB. Consequently, the 2D Mo_4/3B₂ MBene could accurately detect various trace chemical analytes. Moreover, with ordered metal vacancies in the 2D Mo_4/3B₂ MBene, uniform charge transfer sites are formed, resulting in an outstanding signal uniformity with a relative standard deviation down to 6.0%. This work opens up a new horizon for the high-performance SERS platform based on MBene materials, which holds great promise in the field of chemical sensing.

Effect of vacancy defects on the electronic and mechanical properties of two-dimensional MoSi2N4

MoSi₂N₄ is a recently fabricated 2-dimensional indirect bandgap semiconductor material that has attracted interest in various fields due to its promising properties. A defect-based thorough and reliable investigation of its physical properties is indispensable in this regard to explore its industrial applications in the future. In this work, a comprehensive vacancy defect-based analysis of the electronic and mechanical characteristics of this material is conducted with varying defect percentages. We have analyzed the gradual change in electronic properties of MoSi₂N₄ by performing first-principles density functional theory-based investigation and presented a detailed analysis for point vacancies ranging from 0.297% to 14.29%, revealing the transition of this monolayer from the semiconductor to metal phase. The gradual change in mechanical properties due to the defect introduction has also been reported and analyzed, where the Young's modulus, Poisson ratio, elastic constant, etc. are calculated by the stress-strain method using Matrix Sets (OHESS). Further, we extend the investigation to the exploration of thermal and topological characteristics and report the triviality of the MoSi₂N₄ material as well as the effect on specific heat, entropy, and free energy with respect to temperature. We believe that the results presented in this study could assist the process of incorporating MoSi₂N₄ in future 2D electronics.

Fast, specific, and ultrasensitive antibiotic residue detection by monolayer WS2-based field-effect transistor sensor

Antibiotic residues cause increasing concern in environmental ecology and public health, which needs efficient analysis strategy for monitoring and control. In this study, a fast, specific, and ultrasensitive sensor based on field-effect transistor (FET) has been proposed for the detection of ampicillin (AMP). The sensor involves monolayer tungsten disulfide (WS₂) nanosheet as the sensing channel, single-stranded DNA (ssDNA) as the sensing probe, and gold nanoparticle (Au NP) as the linker. The WS₂/Au/ssDNA FET sensor responds rapidly to AMP in a wide linear detection range (10^-12-10^-6 M) and has low limit of detection (0.556 pM), which meets the permissible standards of AMP in water and food. The sensing mechanism study suggests that the excellent sensor response results from the increased number of negative charges in the Debye length and the consequent accumulation of holes in WS₂ channel after the addition of AMP. Moreover, satisfactory sensing performance was confirmed in real water samples, indicating the potential application of the proposed method in practical AMP detection. The reported FET sensing strategy provides new insights in antibiotic analysis for risk assessment and control.

Structure, stability, and electronic and optical properties of TMDC-coinage metal composites: vertical atomically thin self-assembly of Au clusters

Composites of metal clusters supported on transition metal dichalcogenides (TMDCs) often provide promising opportunities for applications in nanoelectronics, catalysis, sensing, etc. In the present investigation, a systematic attempt has been made to unveil the structure and stability of coinage M₆ clusters supported on TMDC (MoS₂ and WS₂) monolayers. The more prominent objective is to explore potential candidates that stabilize the two-dimensional (2D) M₆ clusters on their surface. Periodic energy decomposition analysis (pEDA) was carried out to probe the various interaction energy (IE) components that govern the stability of the M₆ clusters in the composites. Attention has also been devoted to unravelling the electronic and optical properties of these TMDCs/M₆ composites. Moreover, ab initio molecular dynamics (AIMD) simulations were performed to scrutinize the dynamic behaviour of Au cluster on WS₂ monolayer. The results reveal that the coinage M₆ clusters form energetically more stable composites on MoS₂ than WS₂ monolayer. It is worth mentioning that WS₂ promotes the stability of 2D M₆ clusters. Inclusion of dispersion correction marginally altered the geometries of the TMDCs/M₆ composites but its impact on the IE values was significant. AIMD simulation explicitly emphasizes that the WS₂ surface preferentially facilitates the vertical 2D self-assembling of Au atoms and, interestingly, the planarity is mostly retained during the course of simulations. The adsorption of coinage M₆ clusters substantially influences the electronic and optical properties of the TMDCs. HSE06 calculation confirms that the decrease in energy gap is more pronounced in MoS₂/M₆ composites. The outcomes of this study render fundamental insights into the various TMDCs/M₆ composites that would certainly be worthwhile probing for diverse practical applications.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Phase-Transformation Nanoparticles Synchronously Boosting Mechanical and Electromagnetic Performance of SiBCN Ceramics

Precursor-derived silicoboron carbonitride ceramic (PDC-SiBCN) has attracted significant attention as an advanced electromagnetic (EM) wave-absorbing material. However, the inherent porous and brittle characteristics limit its application as a structural load component in an EM interference environment. In this study, phase-transformation HfO₂ nanoparticles were incorporated into PDC-SiBCN to reduce volume shrinkage, improve bonding interactions, and control structural defects, simultaneously boosting the plastic deformation and EM performance of brittle ceramics. The obtained HfO₂/SiBCN ceramic showed enhanced flexural strength of up to 430.1% compared with that of the pure SiBCN ceramic. Furthermore, the HfO₂/SiBCN ceramic also demonstrated excellent high-temperature EM absorption. The minimum reflection coefficient (RC_min) could reach -45.26 dB, and the effective absorption bandwidth (EAB) covered 2.80 GHz of the X band at 2.28 mm thickness at room temperature. Furthermore, the RC_min can still reach -44.83 dB, and the EAB can cover 2.4 GHz at 1.58 mm even at 1073 K. This work shows that phase-transformation nanoparticles could simultaneously improve the deformation ability and EM wave absorption properties of SiBCN ceramics. The results could guide the design and preparation of PDCs with strong carrying capacity and excellent EM absorption, even in harsh environments.

Nanoscale Control of DNA-Linked MoS2-Quantum Dot Heterostructures

The ability to control the assembly of mixed-dimensional heterostructures with nanoscale control is key for the fabrication of novel nanohybrid systems with new functionalities, particularly for optoelectronics applications. Herein we report a strategy to control the assembly of heterostructures and tune their electronic coupling employing DNA as a linker. We functionalized MoS2 nanosheets (NSs) with biotin-terminated dsDNA employing three different chemical strategies, namely, thiol, maleimide, and aryl diazonium. This allowed us to then tether streptavidinated quantum dots (QDs) to the DNA functionalized MoS2 surface via biotin-avidin recognition. Nanoscale control over the separation between QDs and NSs was achieved by varying the number of base pairs (bp) constituting the DNA linker, between 10, 20, and 30 bp, corresponding to separations of 3.4, 6.8, and 13.6 nm, respectively. Spectroscopic data confirmed the successful functionalization, while atomic force and transmission electron microscopy were employed to image the nanohybrids. In solution steady-state and time-resolved photoluminescence demonstrated the electronic coupling between the two nanostructures, that in turn was observed to progressively scale as a function of DNA linker employed and hence distance between the two nanomoieties in the hybrids.

Anisotropic Carrier Mobility and Spectral Fingerprints of Two-Dimensional γ-Phosphorus Carbide with Antisite Defects

We apply density functional theory to study carrier mobility in a γ-phosphorus carbide monolayer. Although previous calculations predicted high and anisotropic mobility in this material, we show that the mobility can be significantly influenced by common antisite defects. We demonstrate that at equilibrium concentrations defects do not inhibit carrier mobility up to temperatures of 1000 K. However, defects can change the mobility at high nonequilibrium concentrations of about 10^-4 to 10^-2 defects per atom. At the low end of this concentration range, defects act as traps for charge carriers and inhibit their mobility. At the high end of this range, defects change the effective carrier masses and deformation potentials, and they can lead to both an increase and a decrease in mobility. We also report the Raman and IR spectra associated with antisite defects. We predict new vibrational modes and shifts of the existing modes due to the defects.

Two-dimensional H- and F-BX (X = O, S, Se, and Te) photocatalysts with ultrawide bandgap and enhanced photocatalytic performance for water splitting

We theoretically propose a type of monolayer structure, H- or F-BX (X = As, Sb; Y = P, As), produced by surface hydrogenation or fluorination, with high stability, large band structures and high light absorption for photocatalytic water splitting. Based on first-principles calculations with the HSE06 functional, the electronic properties and optical properties were explored to reveal their potential performance in semiconductor devices. Additionally, owing to the Janus structure and high electronegativity of the monolayers, our calculations showed that surface fluorination can easily create an internal electric field compared with surface hydrogenation, which results in different trends of increasing bandgaps in monolayer H- and F-BX. We also found that the monolayers H- and F-BX have suitable band edges and high solar to hydrogen (STH) efficiency, enabling them to be photocatalysts for water splitting. Our work not only proposes eight monolayer semiconductors for expanding the number of two-dimensional semiconductors, but also provides a guide for how to regulate semiconductors for application in photocatalytic water splitting by using surface hydrogenation and fluorination.

Van der Waals-Interface-Dominated All-2D Electronics

The interface is the device. As the feature size rapidly shrinks, silicon-based electronic devices are facing multiple challenges of material performance decrease and interface quality degradation. Ultrathin 2D materials are considered as potential candidates in future electronics by their atomically flat surfaces and excellent immunity to short-channel effects. Moreover, due to naturally terminated surfaces and weak van der Waals (vdW) interactions between layers, 2D materials can be freely stacked without the lattice matching limit to form high-quality heterostructure interfaces with arbitrary components and twist angles. Controlled interlayer band alignment and optimized interfacial carrier behavior allow all-2D electronics based on 2D vdW interfaces to exhibit more comprehensive functionality and better performance. Especially, achieving the same computing capacity of multiple conventional devices with small footprint all-2D devices is considered to be the key development direction of future electronics. Herein, the unique properties of all-2D vdW interfaces and their construction methods are systematically reviewed and the main performance contributions of different vdW interfaces in 2D electronics are summarized, respectively. Finally, the recent progress and challenges for all-2D vdW electronics are discussed, and how to improve the compatibility of 2D material devices with silicon-based industrial technology is pointed out as a critical challenge.

Microwave Facilitated Covalent Organic Framework/Transition Metal Dichalcogenide Heterostructures

Organic/inorganic heterostructures present a versatile platform for creating materials with new functionalities and hybrid properties. In particular, junctions between two dimensional materials have demonstrated utility in next generation electronic, optical, and optoelectronic devices. This work pioneers a microwave facilitated synthesis process to readily incorporate few-layer covalent organic framework (COF) films onto monolayer transition metal dichalcogenides (TMDC). Preferential microwave excitation of the monolayer TMDC flakes result in selective attachment of COFs onto the van der Waals surface with film thicknesses between 1 and 4 nm. The flexible process is extended to multiple TMDCs (MoS₂, MoSe₂, MoSSe) and several well-known COFs (TAPA-PDA COF, TPT-TFA-COF, and COF-5). Photoluminescence studies reveal a power-dependent defect formation in the TMDC layer, which facilitates electronic coupling between the materials at higher TMDC defect densities. This coupling results in a shift in the A-exciton peak location of MoSe₂, with a red or blue shift of 50 or 19 meV, respectively, depending upon the electron donating character of the few-layer COF films. Moreover, optoelectronic devices fabricated from the COF-5/TMDC heterostructure present an opportunity to tune the PL intensity and control the interaction dynamics within inorganic/organic heterostructures.

Surface Passivation of Layered MoSe2 via van der Waals Stacking of Amorphous Hydrocarbon

Development of efficient surface passivation methods for semiconductor devices is crucial to counter the degradation in their electrical performance owing to scattering or trapping of carriers in the channels induced by molecular adsorption from the ambient environment. However, conventional dielectric deposition involves the formation of additional interfacial defects associated with broken covalent bonds, resulting in accidental electrostatic doping or enhanced hysteretic behavior. In this study, centimeter-scaled van der Waals passivation of transition metal dichalcogenides (TMDCs) is demonstrated by stacking hydrocarbon (HC) dielectrics onto MoSe₂ field-effect transistors (FETs), thereby enhancing the electric performance and stability of the device, accompanied with the suppression of chemical disorder at the HC/TMDCs interface. The stacking of HC onto MoSe₂ FETs enhances the carrier mobility of MoSe₂ FET by over 50% at the n-branch, and a significant decrease in hysteresis, owing to the screening of molecular adsorption. The electron mobility and hysteresis of the HC/MoSe₂ FETs are verified to be nearly intact compared to those of the fabricated HC/MoSe₂ FETs after exposure to ambient environment for 3 months. Consequently, the proposed design can act as a model for developing advanced nanoelectronics applications based on layered materials for mass production.

Ferroelectrics-Integrated Two-Dimensional Devices toward Next-Generation Electronics

Ferroelectric materials play an important role in a wide spectrum of semiconductor technologies and device applications. Two-dimensional (2D) van der Waals (vdW) ferroelectrics with surface-insensitive ferroelectricity that is significantly different from their traditional bulk counterparts have further inspired intensive interest. Integration of ferroelectrics into 2D-layered-material-based devices is expected to offer intriguing working principles and add desired functionalities for next-generation electronics. Herein, fundamental properties of ferroelectric materials that are compatible with 2D devices are introduced, followed by a critical review of recent advances on the integration of ferroelectrics into 2D devices. Representative device architectures and corresponding working mechanisms are discussed, such as ferroelectrics/2D semiconductor heterostructures, 2D ferroelectric tunnel junctions, and 2D ferroelectric diodes. By leveraging the favorable properties of ferroelectrics, a variety of functional 2D devices including ferroelectric-gated negative capacitance field-effect transistors, programmable devices, nonvolatile memories, and neuromorphic devices are highlighted, where the application of 2D vdW ferroelectrics is particularly emphasized. This review provides a comprehensive understanding of ferroelectrics-integrated 2D devices and discusses the challenges of applying them into commercial electronic circuits.

Nanocavity-induced trion emission from atomically thin WSe2

Exciton is a bosonic quasiparticle consisting of a pair of electron and hole, with promising potentials for optoelectronic device applications, such as exciton transistors, photodetectors and light emitting devices. However, the charge-neutral nature of excitons renders them challenging to manipulate using electronics. Here we present the generation of trions, a form of charged excitons, together with enhanced exciton resonance in monolayer WSe₂. The excitation of the trion quasiparticles is achieved by the hot carrier transport from the integrated gold plasmonic nanocavity, formed by embedding monolayer WSe₂ between gold nanoparticles and a gold film. The nanocavity-induced negatively charged trions provide a promising route for the manipulation of excitons, essential for the construction of all-exciton information processing circuits.

On-Surface Synthesis toward Two-Dimensional Polymers

Two-dimensional (2D) polymers have garnered widespread interest because of their intriguing physicochemical properties. Envisaged applications in fields including nanodevices, solid-state chemistry, physical organic chemistry, and condensed matter physics, however, demand high-quality and large-scale production. In this perspective, we first introduce exotic band structures of organic frameworks holding honeycomb, kagome, and Lieb lattices. We further discuss how mesoscale ordered 2D polymers can be synthesized by means of choosing suitable monomers and optimizing growth conditions. We describe successful polymerization strategies to introducing a non-benzenoid subunit into a π-conjugated carbon lattice via delicately designed monomer precursors. Also, to obviate transfer and restore the intrinsic properties of π-conjugated polymers, new paradigms of aryl-aryl coupling on inert surfaces are discussed. Recent achievements in the photopolymerization demonstrate the need for monomer design. We conclude the potential applications of these organic networks and project the future possibilities in providing new insights into on-surface polymerization.

Performance improvement in monolayered SnS2 double-gate field-effect transistors via point defect engineering

Owing to the relatively high carrier mobility and on/off current ratio, monolayered SnS₂ has the advantage of suppressing drain-to-source tunneling for short channels, rendering it a promising candidate in field-effect transistor (FET) applications. To extend the scaling limit of the channel length, we propose to rationally modulate the electronic properties of monolayered SnS₂ through the customized design of point defects and simulate its performance limit in sub-5 nm double-gate FETs (DGFETs), using density functional theory combined with nonequilibrium Green's function formalism. Among all types of point defects, the Se atom as a substitutional dopant (Se_S) can nondegenerately inject electrons into each monolayered (ML) SnS₂ 2 × 4 × 1 supercell, whereas the Sn vacancy (V_Sn) defect exhibits an opposite doping effect. By adjusting the lateral Schottky barrier height between electrodes and the channel region, the on-state current (I_on), on/off ratio, delay time, and power-delay product in the formed n-type Se_S-doped SnS₂ and p-type V_Sn-doped SnS₂ DGFETs with a channel length of 4.5 nm have been remarkably improved, fulfilling the requirements of the International Technology Roadmap for Semiconductors (ITRS) for high-performance applications in the 2028 horizon. Our work unveils the great significance of point defect engineering for applications in ultimately scaled electronics.

Pectin-assisted one-pot synthesis of MoS2 nanocomposites for resistive switching memory application

Developing simple, large-scale, and environmentally-friendly ways to prepare two-dimensional (2D) semiconductive hexagonal phase MoS₂ (2H-MoS₂) nanocomposites remains a significant challenge. Herein, we propose a facile and green method for preparing few-layer MoS₂ nanosheets via a pectin-assisted one-pot synthesis (PAOS), where pectin serves as the surfactant and stabilizer to assist the direct exfoliation of bulk MoS₂ into few-layered semiconductive 2H-MoS₂ nanosheets in water, as well as a second functional part to produce the 2H-MoS₂/pectin nanocomposites simultaneously. Based on the facilely prepared 2H-MoS₂/pectin nanocomposites, extraordinary flash memory devices with a typical bistable electrical switching and nonvolatile rewritable memory effect were realized, achieving a low threshold voltage below 2.0 V, a high ON/OFF ratio as high as 5 × 10², and a retention time longer than 10⁴ s. Systematic investigations reveal that the electrical transition is due to the charge trapping and detrapping behaviors of the 2D 2H-MoS₂/pectin nanocomposites. These findings through PAOS not only offer a general route for efficiently preparing 2H-MoS₂ nanosheets and nanocomposites, but also reveal the great potential of 2D MoS₂-based materials in rectifying the electronic properties for high-performance memory devices.

Recent progress in 2D hybrid heterostructures from transition metal dichalcogenides and organic layers: properties and applications in energy and optoelectronics fields

Atomically thin transition metal dichalcogenides (TMDs) present extraordinary optoelectronic, electrochemical, and mechanical properties that have not been accessible in bulk semiconducting materials. Recently, a new research field, 2D hybrid heteromaterials, has emerged upon integrating TMDs with molecular systems, including organic molecules, polymers, metal-organic frameworks, and carbonaceous materials, that can tailor the TMD properties and exploit synergetic effects. TMD-based hybrid heterostructures can meet the demands of future optoelectronics, including supporting flexible, transparent, and ultrathin devices, and energy-based applications, offering high energy and power densities with long cycle lives. To realize such applications, it is necessary to understand the interactions between the hybrid components and to develop strategies for exploiting the distinct benefits of each component. Here, we provide an overview of the current understanding of the new phenomena and mechanisms involved in TMD/organic hybrids and potential applications harnessing such valuable materials in an insightful way. We highlight recent discoveries relating to multicomponent hybrid materials. Finally, we conclude this review by discussing challenges related to hybrid heteromaterials and presenting future directions and opportunities in this research field.

MoS2 Defect Healing for High-Performance Chemical Sensing of Polycyclic Aromatic Hydrocarbons

The increasing population and industrial development are responsible for environmental pollution. Among toxic chemicals, polycyclic aromatic hydrocarbons (PAHs) are highly carcinogenic contaminants resulting from the incomplete combustion of organic materials. Two-dimensional materials, such as transition metal dichalcogenides (TMDCs), are ideal sensory scaffolds, combining high surface-to-volume ratio with physical and chemical properties that are strongly susceptible to environmental changes. TMDCs can be integrated in field-effect transistors (FETs), which can operate as high-performance chemical detectors of (non)covalent interaction with small molecules. Here, we have developed MoS₂-based FETs as platforms for PAHs sensing, relying on the affinity of the planar polyaromatic molecules for the basal plane of MoS₂ and the structural defects in its lattice. X-ray photoelectron spectroscopy analysis, photoluminescence measurements, and transfer characteristics showed a notable reduction in the defectiveness of MoS₂ and a p-type doping upon exposure to PAHs solutions, with a magnitude determined by the correlation between the ionization energies (E_I) of the PAH and that of MoS₂. Naphthalene, endowed with the higher E_I among the studied PAHs, exhibited the highest output. We observed a log-log correlation between MoS₂ doping and naphthalene concentration in water in a wide range (10^-9-10^-6 M), as well as a reversible response to the analyte. Naphthalene concentrations as low as 0.128 ppb were detected, being below the limits imposed by health regulations for drinking water. Furthermore, our MoS₂ devices can reversibly detect vapors of naphthalene with both an electrical and optical readout, confirming that our architecture could operate as a dual sensing platform.

Generation and Detection of Strain-Localized Excitons in WS2 Monolayer by Plasmonic Metal Nanocrystals

Excitons in a transition-metal dichalcogenide (TMDC) monolayer can be modulated through strain with spatial and spectral control, which offers opportunities for constructing quantum emitters for applications in on-chip quantum communication and information processing. Strain-localized excitons in TMDC monolayers have so far mainly been observed under cryogenic conditions because of their subwavelength emission area, low quantum yield, and thermal-fluctuation-induced delocalization. Herein, we demonstrate both generation and detection of strain-localized excitons in WS₂ monolayer through a simple plasmonic structure design, where WS₂ monolayer covers individual Au nanodisks or nanorods. Enhanced emission from the strain-localized excitons of the deformed WS₂ monolayer near the plasmonic hotspots is observed at room temperature with a photoluminescence energy redshift up to 200 meV. The emission intensity and peak energy of the strain-localized excitons can be adjusted by the nanodisk size. Furthermore, the excitation and emission polarization of the strain-localized excitons are modulated by anisotropic Au nanorods. Our results provide a promising strategy for constructing nonclassical integrated light sources, high-sensitivity strain sensors, or tunable nanolasers for future dense nanophotonic integrated circuits.

In-plane strain engineering in ultrathin noble metal nanosheets boosts the intrinsic electrocatalytic hydrogen evolution activity

Strain has been shown to modulate the electronic structure of noble metal nanomaterials and alter their catalytic performances. Since strain is spatially dependent, it is challenging to expose the active strained interfaces by structural engineering with atomic precision. Herein, we report a facile method to manipulate the planar strain in ultrathin noble metal nanosheets by constructing amorphous–crystalline phase boundaries that can expose the active strained interfaces. Geometric-phase analysis and electron diffraction profile demonstrate the in-plane amorphous–crystalline boundaries can induce about 4% surface tensile strain in the nanosheets. The strained Ir nanosheets display substantially enhanced intrinsic activity toward the hydrogen evolution reaction electrocatalysis with a turnover frequency value 4.5-fold higher than the benchmark Pt/C catalyst. Density functional theory calculations verify that the tensile strain optimizes the d-band states and hydrogen adsorption properties of the strained Ir nanosheets to improve catalysis. Furthermore, the in-plane strain engineering method is demonstrated to be a general approach to boost the hydrogen evolution performance of Ru and Rh nanosheets.

While inducing strain to noble metal nanomaterials can modulate catalytic activities, the strain is often spatially dependent. Here, authors manipulate the planar strain in noble metal nanosheets for hydrogen evolution electrocatalysis by constructing amorphous–crystalline phase boundaries.

Transition Metal Dichalcogenides for High−Performance Aqueous Zinc Ion Batteries

Aqueous zinc ion batteries (ZIBs) with cost—effectiveness, air stability, and remarkable energy density have attracted increasing attention for potential energy storage system applications. The unique electrical properties and competitive layer spacing of transition metal dichalcogenides (TMDs) provide dramatical freedom for facilitating ion diffusion and intercalation, making TMDs suitable for ZIB cathode materials. The recently updated advance of TMDs for high−performance ZIB cathode materials have been summarized in this review. In particular, the key modification strategies of TMDs for realizing the full potential in ZIBs are highlighted. Finally, the insights for further development of TMDs as ZIB cathodes are proposed, to guide the research directions related to the design of aqueous ZIBs while approaching the theoretical performance metrics.

High Anisotropic Optoelectronics in Monolayer Binary M8X12 (M = Mo, W; X = S, Se, Te)

Exploring high performance and excellent ambient stability in two-dimensional (2D) monolayer photoelectric materials is motivated by not only practical applications but also scientific interest. Here, a new 2D monolayer W8Se12 structure is synthesized via in situ electron-beam irradiation on 2D WSe2. Moreover, we systematically studied the photoelectric properties of the class of monolayer M8X12 (M = Mo, W; X = S, Se, and Te) materials by first principles. The results indicated that Mo8S12, Mo8Se12, W8S12, and W8Se12 monolayers possess desirable direct band gaps and remarkable anisotropic optical absorption in visible light, while Mo8Te12 and W8Te12 monolayers are metals. Impressively, the monolayer W8Se12 can result in a direct-indirect-metal transition under uniaxial strain. In addition, they show high anisotropic carrier mobilities (up to 104 cm2 V-1 s-1), significantly over those of transition-metal dichalcogenides. These new binary monolayer M8X12 structures can effectively broaden the 2D material family and may provide four potential candidates in photoelectric applications.

Local electronic structure analysis by ab initio elongation method: A benchmark using DNA block polymers

The ab initio elongation (ELG) method based on a polymerization concept is a feasible way to perform linear-scaling electronic structure calculations for huge aperiodic molecules while maintaining computational accuracy. In the method, the electronic structures are sequentially elongated by repeating (1) the conversion of canonical molecular orbitals (CMOs) to region-localized MOs (RLMOs), that is, active RLMOs localized onto a region close to an attacking monomer or frozen RLMOs localized onto the remaining region, and the subsequent (2) partial self-consistent-field calculations for an interaction space composed of the active RLMOs and the attacking monomer. For each ELG process, one can obtain local CMOs for the interaction space and the corresponding local orbital energies. Local site information, such as the local highest-occupied/lowest-unoccupied MOs, can be acquired with linear-scaling efficiency by correctly including electronic effects from the frozen region. In this study, we performed a local electronic structure analysis using the ELG method for various DNA block polymers with different sequential patterns. This benchmark aimed to confirm the effectiveness of the method toward the efficient detection of a singular local electronic structure in unknown systems as a future practical application. We discussed the high-throughput efficiency of our method and proposed a strategy to detect singular electronic structures by combining with a machine learning technique.

Doped 2D SnS materials derived from liquid metal-solution for tunable optoelectronic devices

Gas-liquid reaction phenomena on liquid-metal solvents can be used to form intriguing 2D materials with large lateral dimensions, where the free energies of formation determine the final product. A vast selection of elements can be incorporated into the liquid metal-based nanostructures, offering a versatile platform for fabricating novel optoelectronic devices. While conventional doping techniques of semiconductors present several challenges for 2D materials. Liquid metals provide a facile route for obtaining doped 2D semiconductors. In this work, we successfully demonstrate that the doping of 2D SnS can be realized in a glove box containing a diluted H₂S gas. Low melting point elements such as Bi and In are alloyed with base liquid Sn in varying concentrations, resulting in the doping of 2D SnS layers incorporating Bi and In sulphides. Optoelectronic properties for photodetectors and piezoelectronics can be fine-tuned through the controlled introduction of selective migration doping. The structural modification of 2D SnS results in a 22.6% enhancement of the d₁₁ piezoelectric coefficient. In addition, photodetector response times have increased by several orders of magnitude. Doping methods using liquid metals have significantly changed the photodiode and piezoelectric device performances, providing a powerful approach to tune optoelectronic device outputs.

Two-Dimensional Material-Based Electrochemical Sensors/Biosensors for Food Safety and Biomolecular Detection

Two-dimensional materials (2DMs) exhibited great potential for applications in materials science, energy storage, environmental science, biomedicine, sensors/biosensors, and others due to their unique physical, chemical, and biological properties. In this review, we present recent advances in the fabrication of 2DM-based electrochemical sensors and biosensors for applications in food safety and biomolecular detection that are related to human health. For this aim, firstly, we introduced the bottom-up and top-down synthesis methods of various 2DMs, such as graphene, transition metal oxides, transition metal dichalcogenides, MXenes, and several other graphene-like materials, and then we demonstrated the structure and surface chemistry of these 2DMs, which play a crucial role in the functionalization of 2DMs and subsequent composition with other nanoscale building blocks such as nanoparticles, biomolecules, and polymers. Then, the 2DM-based electrochemical sensors/biosensors for the detection of nitrite, heavy metal ions, antibiotics, and pesticides in foods and drinks are introduced. Meanwhile, the 2DM-based sensors for the determination and monitoring of key small molecules that are related to diseases and human health are presented and commented on. We believe that this review will be helpful for promoting 2DMs to construct novel electronic sensors and nanodevices for food safety and health monitoring.

Surface Engineering of Defective and Porous Ir Metallene with Polyallylamine for Hydrogen Evolution Electrocatalysis

The design of defects and porous structures into metallene with functional surfaces is highly desired to improve its permeability, surface area, and active sites, but remains a great challenge. In this work, polyallylamine-encapsulated Ir metallene with defects and porous structure (Ir@PAH metallene) is easily fabricated by a one-step wet chemical reduction method. The Ir@PAH metallene exhibits excellent hydrogen evolution reaction (HER) performance with an overpotential of only 14 mV at 10 mA cm^-2 , a low Tafel slope of 31.2 mV dec^-1 , and almost no activity decay after stability test. The abundant defects and pores as well as several-atomic-layer nanosheet structures of Ir@PAH metallene provide a large specific surface area, high conductivity, and efficient mass transport/diffusion. In addition, surface-functionalized PAH molecules can modulate the electronic structure through strong Ir-N interaction and act as proton carriers to capture hydrogen ions, which is very beneficial for the HER in acidic media. This work provides a useful strategy for the synthesis of the defective and porous metallene with functionalized surfaces for various catalytic applications.

Improved Temporal Response of MoS2 Photodetectors by Mild Oxygen Plasma Treatment

Temporal response is an important factor limiting the performance of two-dimensional (2D) material photodetectors. The deep trap states caused by intrinsic defects are the main factor to prolong the response time. In this work, it is demonstrated that the trap states in 2D molybdenum disulfide (MoS₂) can be efficiently modulated by defect engineering through mild oxygen plasma treatment. The response time of the few-layer MoS₂ photodetector is accelerated by 2–3 orders of magnitude, which is mainly attributed to the deep trap states that can be easily filled when O₂ or oxygen ions are chemically bonded with MoS₂ at sulfur vacancies (SV) sites. We characterized the defect engineering of plasma-exposed MoS₂ by Raman, PL and electric properties. Under the optimal processing conditions of 30 W, 50 Pa and 30 s, we found 30-fold enhancements in photoluminescence (PL) intensity and a nearly 2-fold enhancement in carrier field-effect mobility, while the rise and fall response times reached 110 ms and 55 ms, respectively, at the illumination wavelength of 532 nm. This work would, therefore, offer a practical route to improve the performance of 2D dichalcogenide-based devices for future consideration in optoelectronics research.