False multiple exciton recombination and multiple exciton generation signals in semiconductor quantum dots arise from surface charge trapping

Quasi-type II CuInS2/CdS core/shell quantum dots

Ternary chalcopyrite CuInS2 quantum dots (QDs) have been extensively studied in recent years as an alternative to conventional QDs for solar energy conversion applications. However, compared with the well-established photophysics in prototypical CdSe QDs, much less is known about the excited properties of CuInS2 QDs. In this work, using ultrafast spectroscopy, we showed that both conduction band (CB) edge electrons and copper vacancy (VCu) localized holes were susceptible to surface trappings in CuInS2 QDs. These trap states could be effectively passivated by forming quasi-type II CuInS2/CdS core/shell QDs, leading to a single-exciton (with electrons delocalized among CuInS2/CdS CB and holes localized in VCu) half lifetime of as long as 450 ns. Because of reduced electron-hole overlap in quasi-type II QDs, Auger recombination of multiple excitons was also suppressed and the bi-exciton lifetime was prolonged to 42 ps in CuInS2/CdS QDs from 10 ps in CuInS2 QDs. These demonstrated advantages, including passivated trap states, long single and multiple exciton lifetimes, suggest that quasi-type II CuInS2/CdS QDs are promising materials for photovoltaic and photocatalytic applications.

Hidden role of anion exchange reactions in nucleation of colloidal nanocrystals

We show the existence and importance of anion exchange reactions in colloidal chemistry.

Ultrafast Charge Dynamics in Trap-Free and Surface-Trapping Colloidal Quantum Dots

Ultrafast transient absorption spectroscopy is used to study subnanosecond charge dynamics in CdTe colloidal quantum dots. After treatment with chloride ions, these can become free of surface traps that produce nonradiative recombination. A comparison between these dots and the same dots before treatment enables new insights into the effect of surface trapping on ultrafast charge dynamics. The surface traps typically increase the rate of electron cooling by 70% and introduce a recombination pathway that depopulates the conduction band minimum of single excitons on a subnanosecond timescale, regardless of whether the sample is stirred or flowed. It is also shown that surface trapping significantly reduces the peak bleach obtained for a particular pump fluence, which has important implications for the interpretation of transient absorption data, including the estimation of absorption cross-sections and multiple exciton generation yields.

Ultrafast Interfacial Electron and Hole Transfer from CsPbBr3 Perovskite Quantum Dots

Recently reported colloidal lead halide perovskite quantum dots (QDs) with tunable photoluminescence (PL) wavelengths covering the whole visible spectrum and exceptionally high PL quantum yields (QYs, 50-90%) constitute a new family of functional materials with potential applications in light-harvesting and -emitting devices. By transient absorption spectroscopy, we show that the high PL QYs (∼79%) can be attributed to negligible electron or hole trapping pathways in CsPbBr3 QDs: ∼94% of lowest excitonic states decayed with a single-exponential time constant of 4.5 ± 0.2 ns. Furthermore, excitons in CsPbBr3 QDs can be efficiently dissociated in the presence of electron or hole acceptors. The half-lives of electron transfer (ET) to benzoquinone and subsequent charge recombination are 65 ± 5 ps and 2.6 ± 0.4 ns, respectively. The half-lives for hole transfer (HT) to phenothiazine and the subsequent charge recombination are 49 ± 6 ps and 1.0 ± 0.2 ns, respectively. The lack of electron and hole traps and fast interfacial ET and HT rates are key properties that may enable the development of efficient lead halide perovskite QDs-based light-harvesting and -emitting devices.

Subpicosecond Exciton Dynamics and Biexcitonic Feature in Colloidal CuInS2 Nanocrystals: Role of In-Cu Antisite Defects

Charge carrier dynamics of multinary quantum dots like CuInS2 (CIS) nanocrystals (NCs) is not clearly understood, especially in ultrafast time scales. Herein we have synthesized colloidal CIS NCs that show defect-induced emission between donor (antisite) and acceptor (internal/surface) states as indicated from steady-state and time-resolved photoluminescence (PL) measurements. Subpicosecond transient absorption (TA) spectra of CIS NCs reveal a gradient of electronic states that exists above the conduction band edge. The electron cooling rate has been determined to be ∼0.1-0.15 eV/ps. The cascade of electron cooling dynamics was monitored after following the TA kinetics at different electronic states. Interestingly, the kinetics at the antisite state unveil a biexcitonic feature, which has been enlightened through a probe-induced biexciton mechanism. With progressively higher fluence (⟨N⟩), the biexciton binding energy increases, and the electron cooling to the antisite state considerably slows down. Extra energy released during Auger recombination of bi/multiexcitons are used to re-excite the electron to a further high energy level, resulting in longer electron cooling time to the antisite states.

Efficient Extraction of Trapped Holes from Colloidal CdS Nanorods

Cadmium Sulfide (CdS) nanostructures have been widely applied for solar driven H2 generations due to its suitable band gap and band edge energetics. For an efficient photoreduction reaction, hole scavenging from CdS needs to compete favorably with many recombination processes. Extensive spectroscopic studies show evidence for hole trapping in CdS nanostructures, which naturally leads the concern of extracting trapped holes from CdS in photocatalytic reactions. Here, we report a study of hole transfer dynamics from colloidal CdS nanorods (NRs) to adsorbed hole acceptor, phenothiazine (PTZ), using transient absorption spectroscopy. We show that >99% of the holes were trapped (with a time constant of 0.73 ps) in free CdS NRs to form a photoinduced transient absorption (PA) feature. In the presence of PTZ, we observed the decay of the PA feature and corresponding formation of oxidized PTZ(+) radicals, providing direct spectroscopic evidence for trapped hole transfer from CdS. The trapped holes were extracted by PTZ in 3.8 ± 1.7 ns (half-life) to form long-lived charge separated states (CdS(-)-PTZ(+)) with a half lifetime of 310 ± 50 ns. This hole transfer time is significantly faster than the slow conduction band electron-trapped hole recombination (half lifetime of 67 ± 1 ns) in free CdS NRs, leading to an extraction efficiency of 94.7 ± 9.0%. Our results show that despite rapid hole trapping in CdS NRs, efficient extraction of trapped holes by electron donors and slow recombination of the resulting charge-separated states can still be achieved to enable efficient photoreduction using CdS nanocrystals.

Atomic layer deposition in nanostructured photovoltaics: tuning optical, electronic and surface properties

Nanostructured materials offer key advantages for third-generation photovoltaics, such as the ability to achieve high optical absorption together with enhanced charge carrier collection using low cost components. However, the extensive interfacial areas in nanostructured photovoltaic devices can cause high recombination rates and a high density of surface electronic states. In this feature article, we provide a brief review of some nanostructured photovoltaic technologies including dye-sensitized, quantum dot sensitized and colloidal quantum dot solar cells. We then introduce the technique of atomic layer deposition (ALD), which is a vapor phase deposition method using a sequence of self-limiting surface reaction steps to grow thin, uniform and conformal films. We discuss how ALD has established itself as a promising tool for addressing different aspects of nanostructured photovoltaics. Examples include the use of ALD to synthesize absorber materials for both quantum dot and plasmonic solar cells, to grow barrier layers for dye and quantum dot sensitized solar cells, and to infiltrate coatings into colloidal quantum dot solar cell to improve charge carrier mobilities as well as stability. We also provide an example of monolayer surface modification in which adsorbed ligand molecules on quantum dots are used to tune the band structure of colloidal quantum dot solar cells for improved charge collection. Finally, we comment on the present challenges and future outlook of the use of ALD for nanostructured photovoltaics.

Two-state theory of binned photon statistics for a large class of waiting time distributions and its application to quantum dot blinking

A theoretical method is proposed for the calculation of the photon counting probability distribution during a bin time. Two-state fluorescence and steady excitation are assumed. A key feature is a kinetic scheme that allows for an extensive class of stochastic waiting time distribution functions, including power laws, expanded as a sum of weighted decaying exponentials. The solution is analytic in certain conditions, and an exact and simple expression is found for the integral contribution of "bright" and "dark" states. As an application for power law kinetics, theoretical results are compared with experimental intensity histograms from a number of blinking CdSe/ZnS quantum dots. The histograms are consistent with distributions of intensity states around a "bright" and a "dark" maximum. A gap of states is also revealed in the more-or-less flat inter-peak region. The slope and to some extent the flatness of the inter-peak feature are found to be sensitive to the power-law exponents. Possible models consistent with these findings are discussed, such as the combination of multiple charging and fluctuating non-radiative channels or the multiple recombination center model. A fitting of the latter to experiment provides constraints on the interaction parameter between the recombination centers. Further extensions and applications of the photon counting theory are also discussed.

Quantum yield regeneration: influence of neutral ligand binding on photophysical properties in colloidal core/shell quantum dots

This article describes an experiment designed to identify the role of specific molecular ligands in maintaining the high photoluminescence (PL) quantum yield (QY) observed in as-synthesized CdSe/CdZnS and CdSe/CdS quantum dots (QDs). Although it has been possible for many years to prepare core/shell quantum dots with near-unity quantum yield through high-temperature colloidal synthesis, purification of such colloidal particles is frequently accompanied by a reduction in quantum yield. Here, a recently established gel permeation chromatography (GPC) technique is used to remove weakly associated ligands without a change in solvent: a decrease in ensemble QY and average PL lifetime is observed. Minor components of the initial mixture that were removed by GPC are then added separately to purified QD samples to determine whether reintroduction of these components can restore the photophysical properties of the initial sample. We show that among these putative ligands trioctylphosphine and cadmium oleate can regenerate the initial high QY of all samples, but only the "L-type" ligands (trioctyphosphine and oleylamine) can restore the QY without changing the shapes of the optical spectra. On the basis of the PL decay analysis, we confirm that quenching in GPC-purified samples and regeneration in ligand-introduced samples are associated chiefly with changes in the relative population fraction of QDs with different decay rates. The reversibility of the QY regeneration process has also been studied; the introduction and removal of trioctylphosphine and oleylamine tend to be reversible, while cadmium oleate is not. Finally, isothermal titration calorimetry has been used to study the relationship between the binding strength of the neutral ligands to the surface and photophysical property changes in QD samples to which they are added.

Three-pulse femtosecond spectroscopy of PbSe nanocrystals: 1S bleach nonlinearity and sub-band-edge excited-state absorption assignment

Above band-edge photoexcitation of PbSe nanocrystals induces strong below band gap absorption as well as a multiphased buildup of bleaching in the 1Se1Sh transition. The amplitudes and kinetics of these features deviate from expectations based on biexciton shifts and state filling, which are the mechanisms usually evoked to explain them. To clarify these discrepancies, the same transitions are investigated here by double-pump-probe spectroscopy. Re-exciting in the below band gap induced absorption characteristic of hot excitons is shown to produce additional excitons with high probability. In addition, pump-probe experiments on a sample saturated with single relaxed excitons prove that the resulting 1Se1Sh bleach is not linear with the number of excitons per nanocrystal. This finding holds for two samples differing significantly in size, demonstrating its generality. Analysis of the results suggests that below band edge induced absorption in hot exciton states is due to excited-state absorption and not to shifted absorption of cold carriers and that 1Se1Sh bleach signals are not an accurate counter of sample excitons when their distribution includes multiexciton states.

Cascading electron and hole transfer dynamics in a CdS/CdTe core-shell sensitized with bromo-pyrogallol red (Br-PGR): slow charge recombination in type II regime

Ultrafast cascading hole and electron transfer dynamics have been demonstrated in a CdS/CdTe type II core-shell sensitized with Br-PGR using transient absorption spectroscopy and the charge recombination dynamics have been compared with those of CdS/Br-PGR composite materials. Steady state optical absorption studies suggest that Br-PGR forms strong charge transfer (CT) complexes with both the CdS QD and CdS/CdTe core-shell. Hole transfer from the photo-excited QD and QD core-shell to Br-PGR was confirmed by both steady state and time-resolved emission spectroscopy. Charge separation was also confirmed by detecting electrons in the conduction band of the QD and the cation radical of Br-PGR as measured from femtosecond transient absorption spectroscopy. Charge separation in the CdS/Br-PGR composite materials was found to take place in three different pathways, by transferring the photo-excited hole of CdS to Br-PGR, electron injection from the photo-excited Br-PGR to the CdS QD, and direct electron transfer from the HOMO of Br-PGR to the conduction band of the CdS QD. However, in the CdS/CdTe/Br-PGR system hole transfer from the photo-excited CdS to Br-PGR and electron injection from the photo-excited Br-PGR to CdS take place after cascading through the CdTe shell QD. Charge separation also takes place via direct electron transfer from the Br-PGR HOMO to the conduction band of CdS/CdTe. Charge recombination (CR) dynamics between the electron in the conduction band of the CdS QD and the Br-PGR cation radical were determined by monitoring the bleach recovery kinetics. The CR dynamics were found to be much slower in the CdS/CdTe/Br-PGR system than in the CdS/Br-PGR system. The formation of the strong CT complex and the separation of charges cascading through the CdTe shell help to slow down charge recombination in the type II regime.

Hole Surface Trapping Dynamics Directly Monitored by Electron Spin Manipulation in CdS Nanocrystals

A new detection technique, pump-spin orientation-probe ultrafast spectroscopy, is developed to study the hole trapping dynamics in colloidal CdS nanocrystals. The hole surface trapping process spatially separates the electron-hole pairs excited by the pump pulse, leaves the core negatively charged, and thus enhances the electron spin signal generated by the orientation pulse. The spin enhancement transients as a function of the pump-orientation delay reveal a fast and a slow hole trapping process with respective time constants of sub-10 ps and sub-100 ps, orders of magnitude faster than that of carrier recombination. The power dependence of hole trapping dynamics elucidates the saturation process and relative number of traps, and suggests that there are three subpopulations of nanoparticles related to hole surface trapping, one with the fast trapping pathway only, another with the slow trapping pathway only, and the third with both pathways together.

Sample-averaged biexciton quantum yield measured by solution-phase photon correlation

The brightness of nanoscale optical materials such as semiconductor nanocrystals is currently limited in high excitation flux applications by inefficient multiexciton fluorescence. We have devised a solution-phase photon correlation measurement that can conveniently and reliably measure the average biexciton-to-exciton quantum yield ratio of an entire sample without user selection bias. This technique can be used to investigate the multiexciton recombination dynamics of a broad scope of synthetically underdeveloped materials, including those with low exciton quantum yields and poor fluorescence stability. Here, we have applied this method to measure weak biexciton fluorescence in samples of visible-emitting InP/ZnS and InAs/ZnS core/shell nanocrystals, and to demonstrate that a rapid CdS shell growth procedure can markedly increase the biexciton fluorescence of CdSe nanocrystals.

A steady-state and time-resolved photophysical study of CdTe quantum dots in water

The exciton generation and recombination dynamics in semiconductor nanocrystals are very sensitive to small variations in dimensions, shape and surface capping. In the present work CdTe quantum dots are synthesized in water using 3-mercaptopropionic acid and 1-thioglycerol as stabilizers. Nanocrystals with an average dimension of 4.0 ± 1.0 and 3.7 ± 0.9 nm were obtained, when 3-mercaptopropionic acid or 1-thioglycerol, respectively, was used as a capping agent. The steady-state characterization shows that the two types of colloids have different luminescence behavior. In order to investigate the electronic structure and the dynamics of the exciton state, a combined study in the time domain has been carried out by using fluorescence time-correlated single photon counting and femtosecond transient absorption techniques. The electron-hole radiative recombination follows the non-exponential decay law for both colloids, which results in different average decay time values (of the order of tens of nanoseconds) for the two samples. The data demonstrate that the process is slower for 1-thioglycerol-stabilized colloids. The ultrafast transient absorption measurements are performed at two different excitation wavelengths (at the band gap and at higher energies). The spectra are dominated in both types of samples by the negative band-gap bleaching signals although transient positive absorption bands due to the electrons in the conduction band are observable. The analysis of the signals is affected by the different interactions with the defect states, due to ligand capping capacities. In particular, the data indicate that in 1-thioglycerol-stabilized colloids the non-radiative recombination processes are kinetically more competitive than the radiative recombination. Therefore the comparison of the data obtained from the two samples is interpreted in terms of the effects of the capping agents on the electronic relaxation of the colloids.

Stimulated emission and lasing from CdSe/CdS/ZnS core-multi-shell quantum dots by simultaneous three-photon absorption

Three-photon pumped stimulated emission and coherent random lasing from colloidal CdSe/CdS/ZnS core-multishell quantum dots are achieved for the first time. These results can offer new possibilities in biology and photonics, as well as at their intersection of biophotonics.

Trap-induced losses in hybrid photovoltaics

We investigate the loss mechanisms in hybrid photovoltaics based on blends of poly(3-hexylthiophene) with CdSe nanocrystals of various sizes. By combining the spectroscopic and electrical measurements on working devices as well as films, we identify that high trap-mediated recombination is responsible for the loss of photogenerated charge carriers in devices with small nanocrystals. In addition, we demonstrate that the reduced open-circuit voltage for devices with small nanocrystals is also caused by the traps.

Atomistic model of fluorescence intermittency of colloidal quantum dots

Optoelectronic applications of colloidal quantum dots demand a high emission efficiency, stability in time, and narrow spectral bandwidth. Electronic trap states interfere with the above properties but understanding of their origin remains lacking, inhibiting the development of robust passivation techniques. Here we show that surface vacancies improve the fluorescence yield compared to vacancy-free surfaces, while dynamic vacancy aggregation can temporarily turn fluorescence off. We find that infilling with foreign cations can stabilize the vacancies, inhibiting intermittency and improving quantum yield, providing an explanation of recent experimental observations.

Ultrafast charge- and energy-transfer dynamics in conjugated polymer: cadmium selenide nanocrystal blends

Hybrid nanocrystal-polymer systems are promising candidates for photovoltaic applications, but the processes controlling charge generation are poorly understood. Here, we disentangle the energy- and charge-transfer processes occurring in a model system based on blends of cadmium selenide nanocrystals (CdSe-NC) with poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylene vinylene] (MDMO-PPV) using a combination of time-resolved absorption and luminescence measurements. The use of different capping ligands (n-butylamine, oleic acid) as well as thermal annealing allows tuning of the polymer-nanocrystal interaction. We demonstrate that energy transfer from MDMO-PPV to CdSe-NCs is the dominant exciton quenching mechanism in nonannealed blends and occurs on ultrafast time scales (<1 ps). Upon thermal annealing electron transfer becomes competitive with energy transfer, with a transfer rate of 800 fs independent of the choice of the ligand. Interestingly, we find hole transfer to be much less efficient than electron transfer and to extend over several nanoseconds. Our results emphasize the importance of tuning the organic-nanocrystal interaction to achieve efficient charge separation and highlight the unfavorable hole-transfer dynamics in these blends.

Size dependence of negative trion Auger recombination in photodoped CdSe nanocrystals

We report a systematic investigation of the size dependence of negative trion (T(-)) Auger recombination rates in free-standing colloidal CdSe nanocrystals. Colloidal n-type CdSe nanocrystals of various radii have been prepared photochemically, and their trion decay dynamics have been measured using time-resolved photoluminescence spectroscopy. Trion Auger time constants spanning 3 orders of magnitude are observed, ranging from 57 ps (radius R = 1.4 nm) to 2.2 ns (R = 3.2 nm). The data reveal a substantially stronger size dependence than found for bi- or multiexciton Auger recombination in CdSe or other semiconductor nanocrystals, scaling in proportion to R(4.3).

Multiple Exciton Generation in Colloidal Nanocrystals

In a conventional solar cell, the energy of an absorbed photon in excess of the band gap is rapidly lost as heat, and this is one of the main reasons that the theoretical efficiency is limited to ~33%. However, an alternative process, multiple exciton generation (MEG), can occur in colloidal quantum dots. Here, some or all of the excess energy is instead used to promote one or more additional electrons to the conduction band, potentially increasing the photocurrent of a solar cell and thereby its output efficiency. This review will describe the development of this field over the decade since the first experimental demonstration of multiple exciton generation, including the controversies over experimental artefacts, comparison with similar effects in bulk materials, and the underlying mechanisms. We will also describe the current state-of-the-art and outline promising directions for further development.

Coherent exciton delocalization in strongly coupled quantum dot arrays

Quantum dots (QDs) coupled into disordered arrays have exhibited the intriguing property of bulk-like transport while maintaining discrete excitonic optical transitions. We have utilized ultrafast cross-polarized transient grating (CPTG) spectroscopy to measure electron-hole wave function overlap in CdSe QD films with chemically modified surfaces for tuning inter-QD electronic coupling. By comparing the CPTG decays with those of isolated QDs, we find that excitons coherently delocalize to form excited states more than 200% larger than the QD diameter.

25th anniversary article: Colloidal quantum dot materials and devices: a quarter-century of advances

Colloidal quantum dot (CQD) optoelectronics offers a compelling combination of low-cost, large-area solution processing, and spectral tunability through the quantum size effect. Since early reports of size-tunable light emission from solution-synthesized CQDs over 25 years ago, tremendous progress has been made in synthesis and assembly, optical and electrical properties, materials processing, and optoelectronic applications of these materials. Here some of the major developments in this field are reviewed, touching on key milestones as well as future opportunities.

Multiple population-period transient spectroscopy (MUPPETS) of CdSe/ZnS nanoparticles. I. Exciton and biexciton dynamics

The nonradiative relaxation of both the exciton and biexciton in CdSe/ZnS core-shell nanoparticles have complicated, nonexponential kinetics. This paper presents data on this system from multiple population-period transient spectroscopy (MUPPETS), a method for two-dimensional kinetics. An initial report of a dispersed (nonexponential) biexciton decay [J. Am. Chem. Soc. 2013, 135, 1002] is confirmed in a more rigorous analysis. Additional transient-grating data allow a quantitative treatment of the full, complex MUPPETS data set. The MUPPETS signal has a strong fluence dependence. With extrapolation to the low fluence limit, the ratio of cross sections for ground-to-exciton and exciton-to-biexciton absorption is found to be close to the predictions of the uncorrelated-electron model. The full two-dimensional MUPPETS data set is reported for the first time and is analyzed to detect heterogeneity in the exciton decay. The exciton has a substantial (>40%) nonradiative decay, but it is not due to a subset of defective particles. A surface relaxation in response to formation of the exciton is suggested. This data set is the first capable of detecting correlations between the biexciton and exciton decay mechanism. None is found.

Multiexciton annihilation and dissociation in quantum confined semiconductor nanocrystals

Recent reports of multiexciton generation (MEG), a process by which one absorbed photon generates multiple excitons, in lead chalcogenide nanocrystals (NCs) have intensified research interest in using this phenomenon to improve the efficiency of solar energy conversion. Practical implementation of MEG processes in solar cells and solar-to-fuel conversion devices requires the development of materials with higher MEG efficiencies and lower excitation thresholds than are currently available, as well as schemes for efficient multiexciton extraction before the ultrafast exciton-exciton annihilation occurs. This Account focuses on the extraction of multiexcitons by interfacial electron transfer in model NC-molecular acceptor complexes. We provide an overview of multiexciton annihilation and multiexciton dissociation (MED) processes in NC-acceptor complexes of (i) CdSe quantum dots (QDs), (ii) CdSe/CdS quasi-type II core/shell QDs, (iii) CdSe quantum confined nanorods (QRs), and (iv) PbS QDs. We show that ultrafast electron transfer to adsorbed molecular acceptors can efficiently dissociate multiexcitons generated by absorption of multiple photons in (i), (ii), and (iii). Compared to core-only CdSe QDs, the electron hole distributions in CdSe/CdS quasi-type II QDs and CdSe QRs significantly improve their MED efficiencies by simultaneously retarding Auger recombination and facilitating interfacial electron transfer. Finally, in PbS-methylene blue (MB(+)) complexes, we show that the presence of electron acceptors does not affect the MEG efficiency and electron transfer to MB(+) efficiently dissociates the multiple excitons generated in PbS QDs. Our findings demonstrate that ultrafast interfacial charge transfer can be an efficient approach for extracting multiexcitons, and wavefunction engineering in quantum confined NCs can further improve MED efficiency.

Exciton dynamics in semiconductor nanocrystals

This review article provides an overview of recent advances in the study and understanding of dynamics of excitons in semiconductor nanocrystals (NCs) or quantum dots (QDs). Emphasis is placed on the relationship between exciton dynamics and optical properties, both linear and nonlinear. We also focus on the unique aspects of exciton dynamics in semiconductor NCs as compared to those in bulk crystals. Various experimental techniques for probing exciton dynamics, particularly time-resolved laser methods, are reviewed. Relevant models and computational studies are also briefly presented. By comparing different materials systems, a unifying picture is proposed to account for the major dynamic features of excitons in semiconductor QDs. While the specific dynamic processes involved are material-dependent, key processes can be identified for all the materials that include electronic dephasing, intraband relaxation, trapping, and interband recombination of free and trapped charge carriers (electron and hole). Exciton dynamics play a critical role in the fundamental properties and functionalities of nanomaterials of interest for a variety of applications including optical detectors, solar energy conversion, lasers, and sensors. A better understanding of exciton dynamics in nanomaterials is thus important both fundamentally and technologically.

Exciton annihilation and dissociation dynamics in group II-V Cd3P2 quantum dots

Semiconductor quantum dots (QDs) have emerged as a new class of light harvesting materials for solar energy conversion due to their unique size-dependent properties. Most recent studies have focused on II-VI group (such as CdX, X = S, Se, and Te) QDs and lead salt (such as PbS, PbSe, and PbTe) QDs. In this paper, we investigate exciton dissociation and annihilation dynamics of Cd3P2 QDs, a low bulk band gap (0.55 eV) II-V group material, to explore their potential application as a light harvesting component for photoreduction systems. For Cd3P2 QDs with 1S exciton band at 650 nm, a long-lived single exciton state with lifetime of 259 ns and a high emission quantum yield of 65% were observed. In Cd3P2 QD-rhodamine B (RhB, an electron acceptor) complexes, excitons in QDs could be dissociated by ultrafast electron transfer to RhB (6.2 ps), and the charge separated state had a long lifetime (31 ns). Although the photoinduced electron transfer rate in QD-RhB complexes decreased with increasing QD size, electron transfer was observed in QDs with 1S exciton bands at wavelength as long as 1050 nm. Compared with CdSe and PbS, Cd3P2 QDs with both more strongly reducing excited states and broader absorption in the visible and near IR region can be readily achieved, making them potential photosensitizers for photodriven water or CO2 reduction reactions.

Interfacial charge separation and recombination in InP and quasi-type II InP/CdS core/shell quantum dot-molecular acceptor complexes

Recent studies of group II-VI colloidal semiconductor heterostuctures, such as CdSe/CdS core/shell quantum dots (QDs) or dot-in-rod nanorods, show that type II and quasi-type II band alignment can facilitate electron transfer and slow down charge recombination in QD-molecular electron acceptor complexes. To explore the general applicability of this wave function engineering approach for controlling charge transfer properties, we investigate exciton relaxation and dissociation dynamics in InP (a group III-V semiconductor) and InP/CdS core/shell (a heterostructure beween group III-V and II-VI semiconductors) QDs by transient absorption spectroscopy. We show that InP/CdS QDs exhibit a quasi-type II band alignment with the 1S electron delocalized throughout the core and shell and the 1S hole confined in the InP core. In InP-methylviologen (MV(2+)) complexes, excitons in the QD can be dissociated by ultrafast electron transfer to MV(2+) from the 1S electron level (with an average time constant of 11.4 ps) as well as 1P and higher electron levels (with a time constant of 0.39 ps), which is followed by charge recombination to regenerate the complex in its ground state (with an average time constant of 47.1 ns). In comparison, InP/CdS-MV(2+) complexes show similar ultrafast charge separation and 5-fold slower charge recombination rates, consistent with the quasi-type II band alignment in these heterostructures. This result demonstrates that wave function engineering in nanoheterostructures of group III-V and II-VI semiconductors provides a promising approach for optimizing their light harvesting and charge separation for solar energy conversion applications.

Universal trapping mechanism in semiconductor nanocrystals

Size tunability of the optical properties and inexpensive synthesis make semiconductor nanocrystals one of the most promising and versatile building blocks for many modern applications such as lasers, single-electron transistors, solar cells, and biological labels. The performance of these nanocrystal-based devices is however compromised by efficient trapping of the charge carriers. This process exhibits different features depending on the nanocrystal material, surface termination, size, and trap location, leading to the assumption that different mechanisms are at play in each situation. Here we revolutionize this fragmented picture and provide a unified interpretation of trapping dynamics in semiconductor nanocrystals by identifying the origins of this so far elusive detrimental process. Our findings pave the way for a general suppression strategy, applicable to any system, which can lead to a simultaneous efficiency enhancement in all nanocrystal-based technologies.

Size-dependent trap-assisted Auger recombination in semiconductor nanocrystals

The acceleration of Auger-type multicarrier recombination in semiconductor nanocrystals impedes the development of many quantum-dot photonics, solar-cell, lighting, and lasing technologies. To date, only multiexciton and charged-exciton Auger recombination channels are known to show strong size dependence in nanocrystals. Here, we report the first observation of strongly accelerated "trap-assisted" Auger recombination rates in semiconductor nanocrystals. Trap-assisted Auger recombination in ZnO nanocrystals, involving the recombination of conduction-band electrons with deeply trapped holes via nonradiative energy transfer to extra conduction-band electrons, has been probed using time-resolved photoluminescence and transient absorption spectroscopies. We demonstrate that this trap-assisted Auger recombination accelerates dramatically with decreasing nanocrystal size, having recombination times of >1 ns in the largest nanocrystals but only ~80 ps in the smallest. These trap-assisted Auger recombination rates are shown to scale with inverse nanocrystal radius squared (1/τ(Auger) ~ R(-2)). Because surface carrier traps are ubiquitous in colloidal semiconductor nanocrystals, such fast trap-assisted Auger recombination is likely more prevalent in semiconductor nanocrystal photophysics than previously recognized.

Ultrafast exciton dynamics in Type II ZnTe-ZnSe colloidal quantum dots

Ultrafast transient absorption spectroscopy is used to investigate the exciton dynamics of Type II ZnTe-ZnSe core-shell colloidal quantum dots. Surface-trapping is shown to occur within a few picosecond for hot electrons and with a few 10s of picoseconds for electrons cooled to the band-edge, and is the dominant process in the decay of the band-edge bleach for well-stirred samples pumped at moderate powers. The surface-trapped electrons produce a broad photo-induced absorption that spectrally overlaps with the band-edge, distorting and partially cancelling out the bleach feature. At high pump powers and for unstirred samples, these surface-trapped electrons can survive sufficiently long within the pumped volume to accumulate under repeated excitation of the sample, resulting in the formation of an additional exciton decay channel.

Ultrafast electron trapping at the surface of semiconductor nanocrystals: excitonic and biexcitonic processes

Aging of semiconductor nanocrystals (NCs) is well-known to attenuate the spontaneous photoluminescence from the band edge excitonic state by introduction of nonradiative trap states formed at the NC surface. In order to explore charge carrier dynamics dictated by the surface of the NC, femtosecond pump/probe spectroscopic experiments are performed on freshly synthesized and aged CdTe NCs. These experiments reveal fast electron trapping for aged CdTe NCs from the single excitonic state (X). Pump fluence dependence with excitonic state-resolved optical pumping enables directly populating the biexcitonic state (XX), which produces further accelerated electron trapping rates. This increase in electron trapping rate triggers coherent acoustic phonons by virtue of the ultrafast impulsive time scale of the surface trapping process. The observed trapping rates are discussed in terms of electron transfer theory.

Study of surface and bulk electronic structure of II-VI semiconductor nanocrystals using Cu as a nanosensor

Efficiency of the quantum dots based solar cells relies on charge transfer at the interface and hence on the relative alignment of the energy levels between materials. Despite a high demand to obtain size specific band offsets, very few studies exist where meticulous methods like photoelectron spectroscopy are used. However, semiconductor charging during measurements could result in indirect and possibly inaccurate measurements due to shift in valence and conduction band position. Here, in this report, we devise a novel method to study the band offsets by associating an atomic like state with the conduction band and hence obtaining an internal standard. This is achieved by doping copper in semiconductor nanocrystals, leading to the development of a characteristic intragap Cu-related emission feature assigned to the transition from the conduction band to the atomic-like Cu d state. Using this transition we determine the relative band alignment of II-VI semiconductor nanocrystals as a function of size in the below 10 nm size regime. The results are in excellent agreement with the available photoelectron spectroscopy data as well as the theoretical data. We further use this technique to study the excitonic band edge variation as a function of temperature in CdSe nanocrystals. Additionally, surface electronic structure of CdSe nanocrystals have been studied using quantitative measurements of absolute quantum yield and PL decay studies of the Cu related emission and the excitonic emission. The role of TOP and oleic acid as surface passivating ligand molecules has been studied for the first time.

Multiresonant Multidimensional Spectroscopy of Surface-Trapped Excitons in PbSe Quantum Dots

Recent work spectrally isolated and measured the quantum states associated with ultrafast relaxation from an initially excited 1S excitonic state to a lower energy state that is present in an inadequately capped PbSe quantum dot sample. The relaxed state was attributed to a surface-trapped exciton (STE). This letter reports the line-narrowed, multiresonant, two-dimensional spectrum of this sample. The multidimensional spectrum is unusual because diagonal peaks are absent, but there is a strong cross-peak between the 1S and STE transitions. Theoretical modeling provided values for the coherent and incoherent dynamics, the relative exciton and biexciton transition moments, the Coulombic coupling, and the homogeneous and inhomogeneous broadening. This work demonstrates the feasibility of using multiresonant methods to probe the quantum state dynamics of interface states in nanostructures.

Photoexcited electron and hole dynamics in semiconductor quantum dots: phonon-induced relaxation, dephasing, multiple exciton generation and recombination

Photoexcited dynamics of electrons and holes in semiconductor quantum dots (QD), including phonon-induced relaxation, multiple exciton generation, fission and recombination (MEG, MEF and MER), were simulated by combining ab initio time-dependent density functional theory and non-adiabatic molecular dynamics. These nonequilibrium phenomena govern the optical properties and photoexcited dynamics of QDs, determining the branching between electronic processes and thermal energy losses. Our approach accounts for QD size and shape as well as defects, core-shell distribution, surface ligands and charge trapping, which significantly influence the properties of photoexcited QDs. The method creates an explicit time-domain representation of photoinduced processes and describes various kinetic regimes owing to the non-perturbative treatment of quantum dynamics. QDs of different sizes and materials, with and without ligands, are considered. The simulations provide direct evidence that the high-frequency ligand modes on the QD surface play a pivotal role in the electron-phonon relaxation, MEG, MEF and MER. The insights reported here suggest novel routes for controlling the photoinduced processes in semiconductor QDs and lead to new design principles for increasing the efficiencies of photovoltaic devices.

Hole surface trapping in CdSe nanocrystals: dynamics, rate fluctuations, and implications for blinking

Carrier trapping is one of the main sources of performance degradation in nanocrystal-based devices. Yet the dynamics of this process is still unclear. We present a comprehensive investigation into the efficiency of hole transfer to a variety of trap sites located on the surface of the core or the shell or at the core/shell interface in CdSe nanocrystals with both organic and inorganic passivation, using the atomistic semiempirical pseudopotential approach. We separate the contribution of coupling strength and energetics in different systems and trap configurations, obtaining useful general guidelines for trapping rate engineering. We find that trapping can be extremely efficient in core-only systems, with trapping times orders of magnitude faster than radiative recombination. The presence of an inorganic shell can instead bring the trapping rates well below the typical radiative recombination rates observed in these systems.

Ultrafast exciton dynamics in InAs/ZnSe nanocrystal quantum dots

Colloidal nanocrystal quantum dots with a band gap in the near infra-red have potential application as the emitters for telecommunications or in vivo imaging, or as the photo-absorbing species in next generation solar cells or photodetectors. However, electro- and photoluminescence yields and the efficiency with which photo-generated charges can be extracted from quantum dots depend on the total rate of recombination, which can be dominated by surface-mediated processes. In this study, we use ultrafast transient absorption spectroscopy to characterise the recombination dynamics of photo-generated charges in InAs/ZnSe nanocrystal quantum dots. We find that recombination is dominated by rapid, sub-nanosecond transfer of conduction band electrons to surface states. For the size of dots studied, we also find no evidence of significant multiple exciton generation for photon energies up to 3.2 times the band gap, in agreement with our theoretical modelling.