Resistive Switching Behavior in Organic-Inorganic Hybrid CH3 NH3 PbI3-x Clx Perovskite for Resistive Random Access Memory Devices

Environmentally Robust Memristor Enabled by Lead-Free Double Perovskite for High-Performance Information Storage

Memristors are emerging as a rising star of new computing and information storage techniques. However, the practical applications are severely challenged by their instability toward harsh conditions, including high moisture, high temperatures, fire, ionizing irradiation, and mechanical bending. In this work, for the first time, lead-free double perovskite Cs₂ AgBiBr₆ is utilized for environmentally robust memristors, enabling highly efficient information storage. The memory performance of the typical indium-tin-oxide/Cs₂ AgBiBr₆ /Au sandwich-like memristors is retained after 1000 switching cycles, 10⁵ s of reading, and 10⁴ times of mechanical bending, comparable to other halide perovskite memristors. Most importantly, the memristive behavior remains robust in harsh environments, including humidity up to 80%, temperatures as high as 453 K, an alcohol burner flame for 10 s, and ⁶⁰ Co γ-ray irradiation for a dosage of 5 × 10⁵ rad (SI), which is not achieved by any other memristors and commercial flash memory techniques. The realization of an environmentally robust memristor from Cs₂ AgBiBr₆ with a high memory performance will inspire further development of robust electronics using lead-free double perovskites.

Analog Memristive Characteristics of Mesoporous Silica-Titania Nanocomposite Device Concurrent with Selection Diode Property

A threshold resistive switching (RS) device concurrently demonstrating analog memristive property with mesoporous silica-titania (m-ST) nanocomposites is introduced in this study. The nanostructured m-ST layer in an Al/m-ST/Pt device was constructed by facile soft templating of evaporation-induced self-assembly (EISA) method to demonstrate nonlinear threshold RS behaviors accompanying with discrete synaptic characteristics along with adaptive motions. The EISA layer was composed of well-ordered mesopores (∼10 nm), where paths of electrical currents could be controllably guided and sequentially activated by repeated voltage sweeps. The combinational memristive behavior accompanying the shift of threshold voltage (V_th) could implicate concurrent performances of threshold RS and selection diode devices. In addition, synaptic functionalities of long-term potentiation and depression were characterized by variations of pulse timing width (7-100 ms). Physical and chemical features of the m-ST were analyzed with Fourier-transform infrared spectroscopy, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, high-resolution transmission electron microscopy, and optical microscopy to investigate the unique origin of dual operation modes of the device. The m-ST synaptic device could have potential for further development of a hybrid selection diode having both a low sneaky current loss and memristive characteristics accomplishing low level of cross-talk between RS devices.

Enhanced Switching Ratio and Long-Term Stability of Flexible RRAM by Anchoring Polyvinylammonium on Perovskite Grains

The ON/OFF ratio and long-term stability are two important issues for flexible organic-inorganic hybrid perovskite (OHP) resistive random access memory (RRAM) for practical applications. In this work, polyvinylammonium (PVAm) is applied to partially replace methylamine ions (MA⁺) to fabricate the stable and flexible polymeric OHP RRAM devices, wherein PVAm acts as nucleation sites and the template for crystalline growth of MAPbI₃ to tune the microscopic perovskite structure. Simultaneously, the multiple perovskite grain interfaces are strengthened through the long-carbochain polymeric backbone, hence producing a continuous and compact perovskite film. As a result, the PVAm-modified OHP RRAM device shows remarkable enhancement of the ON/OFF ratio, long-term stability, and flexibility compared with the unmodified OHP device. Specifically, the polymeric OHP device exhibits fast and stable nonvolatile resistive switching (RS) characteristics with an ON/OFF ratio of ∼10⁵ and a set voltage of -0.45 V under ambient conditions. Also, the distinct multilevel RS behavior can be realized in this device by controlling the compliance current in the SET process. Additionally, the unsealed polymeric OHP device manifests the striking long-term stability, which can still maintain the stable memory performance after 1 year exposure to the humid and thermal ambient environment. Furthermore, the flexible polymeric OHP device was also fabricated and affords the excellent bending endurance behavior by showing a reproducible RS property over 100-cycle bending experiments. This work provides a new perovskite-based material design strategy of polymeric OHP for stable and flexible RRAM devices with the high ON/OFF ratio.

Epitaxial Stabilization of Tetragonal Cesium Tin Iodide

A full range of optoelectronic devices has been demonstrated incorporating hybrid organic-inorganic halide perovskites including high-performance photovoltaics, light emitting diodes, and lasers. Tin-based inorganic halide perovskites, such as CsSnX₃ (X = Cl, Br, I), have been studied as promising candidates that avoid toxic lead halide compositions. One of the main obstacles for improving the properties of all-inorganic perovskites and transitioning their use to high-end electronic applications is obtaining crystalline thin films with minimal crystal defects, despite their reputation for defect tolerance in photovoltaic applications. In this study, the single-domain epitaxial growth of cesium tin iodide (CsSnI₃) on closely lattice matched single-crystal potassium chloride (KCl) substrates is demonstrated. Using in situ real-time diffraction techniques, we find a new epitaxially-stabilized tetragonal phase at room temperature that expands the possibility for controlling electronic properties. We also exploit controllable epitaxy to grow multilayer two-dimensional quantum wells and demonstrate epitaxial films in a lateral photodetector architecture. This work provides insight into the phase control during halide perovskite epitaxy and expands the selection of epitaxially accessible materials from this exciting class of compounds.

Air-Stable Lead-Free Perovskite Thin Film Based on CsBi3I10 and Its Application in Resistive Switching Devices

The development of organic-inorganic hybrid perovskite materials has been rapid in recent years; but their applications are limited by the toxicity and stability of the materials. To address these issues in the context of resistive switching devices, an inorganic lead-free perovskite namely CsBi₃I₁₀ is developed. Uniform and pinhole-free CsBi₃I₁₀ thin films can be fabricated by using CsI-rich precursor solution via a facile antisolvent-assisted spin-coating method. The nonvolatile resistive switching devices based on CsBi₃I₁₀ demonstrate a large on/off ratio (10³), reliable retention properties (10⁴ s), and endurance (150 cycles). Conductive atomic force microscopy reveals that the high- and low-resistance states are formed by breaking and formation of conductive filaments in the perovskite thin film. Because of the excellent stability of the CsBi₃I₁₀ perovskite, the devices exhibit no obvious change in resistive switching behavior even after over 2 month storage in an ambient (60% relative humidity) environment. Our work suggests that the all-inorganic lead-free CsBi₃I₁₀ perovskite has great potential in resistive switching memory as well as in other optoelectronic devices where toxicity and stability are a concern.

The effect of compositional engineering of imidazolium lead iodide on the resistive switching properties

We report here resistive switching memory characteristics of imidazolium lead iodide depending on the molar ratio of PbI2 to imidazolium iodide (ImI), that is, PbI2 : ImI = 1 : 0, 1 : 0.5, 1 : 1, 1 : 2, 1 : 3 and 0 : 1. X-ray diffraction confirms that the stoichiometric composition results in a hexagonal structure of (Im)PbI3, showing a one-dimensional face-sharing [PbI3-] chain. Bipolar resistive switching characteristics are observed regardless of the mixing ratio, where the forming process is required prior to SET and RESET processes at around +0.2 V and -0.2 V, respectively. The ON/OFF ratio is increased from 106 to 109 as the ImI content is increased due to the increased HRS associated with the pronounced insulating characteristics by ImI, whereas, the stoichiometric (Im)PbI3 exhibits 5 times longer endurance (103) and an order of magnitude longer retention time (104 s) as compared to other compositions. Multilevel data storage capability is confirmed by changing the compliance current. The low resistance state (LRS) and the high resistance state (HRS) are associated with Ohmic conduction and Schottky conduction, respectively. Density functional theory (DFT) calculation reveals that the defect formation energy of iodine vacancy is estimated to be low indicating that (Im)PbI3 has a sufficient concentration of iodide vacancy for filament formation. Further energy barrier calculations show that iodide migration preferentially occurs along the 1-dimensional [234] crystallographic direction rather than the interlayer [130] direction. A good performance of the (Im)PbI3-based memristor is thus related to the low defect formation energy of iodide vacancy and the preferential growth of the filament along the 1-dimensional chain.

Effect of interlayer spacing in layered perovskites on resistive switching memory

We report here the effect of interlayer spacing in 2-dimensional (2D) perovskites of [C6H5(CH2)nNH3]2PbI4 (anilinium (An) for n = 0, benzylammonium (BzA) for n = 1 and phenylethylammonium (PEA) for n = 2) on resistive switching properties. X-ray diffraction (XRD) reveals that the interlayer spacing of layered PbI2 is increased from 6.98 Å to 13.29 Å for (An)2PbI4, 14.20 Å for (BzA)2PbI4 and 15.92 Å for (PEA)2PbI4, which leads to a monolayer of organic cations with stacked benzene rings between inorganic PbI42- layers. All the samples in the device structure of Ag/PMMA (polymethyl methacrylate)/perovskite/Pt show bipolar switching behavior, where the SET voltage is near +0.2 V and the RESET voltage is less than -0.5 V. The ratio of LRS (low resistance state) to HRS (high resistance state), also called the ON/OFF ratio, is increased from 106 to 108 as interlayer spacing is increased due to the gradual increase in resistance in the HRS. Endurance is slightly improved from 1.3 × 102 for An to 2.2 × 102 for PEA, whereas substantial improvement in retention is observed from 2 × 103 to 5.5 × 103. This indicates that the enhanced 2D structure is beneficial to the kinetics of forming and rupturing the conducting filaments. The ohmic-like conduction mechanism in the LRS and the hopping mechanism in the HRS are observed for all three samples. This work finds that the resistive switching properties and conduction mechanism in the HRS depend on interlayer spacing in 2D perovskites.

High-Performance Nanofloating Gate Memory Based on Lead Halide Perovskite Nanocrystals

Lead halide perovskites have been extensively investigated in a host of optoelectronic devices, such as solar cells, light-emitting diodes, and photodetectors. The halogen vacancy defects arising from the halogen-poor growth environment are normally regarded as an unfavorable factor to restrict the device performance. Here, for the first time, we demonstrate the utilization of the vacancy defects in lead halide perovskite nanostructures for achieving high-performance nanofloating gate memories (NFGMs). CH₃NH₃PbBr₃ nanocrystals (NCs) were uniformly decorated on the CdS nanoribbon (NR) surface via a facile dip-coating process, forming a CdS NR/CH₃NH₃PbBr₃ NC core-shell structure. Significantly, owing to the existence of sufficient carrier trapping states in CH₃NH₃PbBr₃ NCs, the hybrid device possessed an ultralarge memory window up to 77.4 V, a long retention time of 12 000 s, a high current ON/OFF ratio of 7 × 10⁷, and a long-term air stability for 50 days. The memory window of the device is among the highest for the low-dimensional nanostructure-based NFGMs. Also, this strategy shows good universality and can be extended to other perovskite nanostructures for the construction of high-performance NFGMs. This work paves the way toward the fabrication of new-generation, high-capacity nonvolatile memories using lead halide perovskite nanostructures.

Stretchable and Ambient Stable Perovskite/Polymer Luminous Hybrid Nanofibers of Multicolor Fiber Mats and Their White LED Applications

We report the fabrication and optical/mechanical properties of perovskite/thermoplastic polyurethane (TPU)-based multicolor luminescent core-shell nanofibers and their large-scale fiber mats. One-step coaxial perovskite/TPU nanofibers had a high photoluminescence quantum yield value exceeding 23.3%, surpassing that of its uniaxial counterpart, due to the homogeneous distribution of perovskite nanoparticles (NPs) by the confinement of the TPU shell. The fabricated core-shell nanofibers exhibited a high mechanical endurance owing to the well elastic properties of TPU and maintained the luminescence intensity even under a 100% stretched state after 1000 stretching-relaxing cycles. By taking advantage of the hydrophobic nature of TPU, the ambient and moisture stability of the fabricated fibers were enhanced up to 1 month. Besides, large-area stretchable nanofibers with a dimension of 15 cm × 30 cm exhibiting various visible-light emission peaks were fabricated by changing the composition of perovskite NPs. Moreover, a large-scale luminescent and stretchable fiber mat was successfully fabricated by electrospinning. Furthermore, the white-light emission from the fabricated fibers and mats was achieved by incorporating orange-light-emitting poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] into the TPU shell and coupling the turquoise blue-light-emitting perovskite NPs in the core site. Finally, the integrity of the perovskite-based TPU fibers was realized by fabricating a light-emitting diode (LED) device containing the orange-light-emitting fibers embedded in the polyfluorene emissive layer. This work demonstrated an effective way to prepare stable and stretchable luminous nanofibers and the integration of such nanofibers into LED devices, which could facilitate the future development of wearable electronic devices.

A Highly Stretchable Liquid Metal Polymer as Reversible Transitional Insulator and Conductor

Materials with a temperature-controlled reversible electrical transition between insulator and conductor are attracting huge attention due to their promising applications in many fields. However, most of them are intrinsically rigid and require complicated fabrication processes. Here, a highly stretchable (680% strain) liquid metal polymer composite as a reversible transitional insulator and conductor (TIC), which is accompanied with huge resistivity changes (more than 4 × 10⁹ times) reversibly through a tuning temperature in a few seconds is introduced. When frozen, the insulated TIC becomes conductive and recovers after warming. Both the phase change of the liquid metal droplets and the rigidity change of the polymer contribute directly to transition between insulator and conductor. A simplified model is established to predict the expansion and connection of liquid metal droplets. Along with high stretchability, straightforward fabrication methods, rapid triggering time, large switching ratio, good repeatability, the TIC offers tremendous possibilities for numerous applications, like stretchable switches, semiconductors, temperature sensors, and resistive random-access memory. Accordingly, a system that can display numbers and letters via converting alternative TIC temperature to a binary signal on a computer is conceived and demonstrated. The present discovery suggests a general strategy for fabricating and stimulating a stretchable transitional insulator and conductor based on liquid metal and allied polymers.

Vacancy-Induced Synaptic Behavior in 2D WS2 Nanosheet-Based Memristor for Low-Power Neuromorphic Computing

Memristors with nonvolatile memory characteristics have been expected to open a new era for neuromorphic computing and digital logic. However, existing memristor devices based on oxygen vacancy or metal-ion conductive filament mechanisms generally have large operating currents, which are difficult to meet low-power consumption requirements. Therefore, it is very necessary to develop new materials to realize memristor devices that are different from the mechanisms of oxygen vacancy or metal-ion conductive filaments to realize low-power operation. Herein, high-performance and low-power consumption memristors based on 2D WS₂ with 2H phase are demonstrated, which show fast ON (OFF) switching times of 13 ns (14 ns), low program current of 1 µA in the ON state, and SET (RESET) energy reaching the level of femtojoules. Moreover, the memristor can mimic basic biological synaptic functions. Importantly, it is proposed that the generation of sulfur and tungsten vacancies and electron hopping between vacancies are dominantly responsible for the resistance switching performance. Density functional theory calculations show that the defect states formed by sulfur and tungsten vacancies are at deep levels, which prevent charge leakage and facilitate the realization of low-power consumption for neuromorphic computing application.

High-Performance Solution-Processed Organo-Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross-Bar Array Structure

Resistive random access memories can potentially open a niche area in memory technology applications by combining the advantages of the long endurance of dynamic random-access memory and the long retention time of flash memories. Recently, resistive memory devices based on organo-metal halide perovskite materials have demonstrated outstanding memory properties, such as a low-voltage operation and a high ON/OFF ratio; such properties are essential requirements for low power consumption in developing practical memory devices. In this study, a nonhalide lead source is employed to deposit perovskite films via a simple single-step spin-coating method for fabricating unipolar resistive memory devices in a cross-bar array architecture. These unipolar perovskite memory devices achieve a high ON/OFF ratio up to 10⁸ with a relatively low operation voltage, a large endurance, and long retention times. The high-yield device fabrication based on the solution-process demonstrated here will be a step toward achieving low-cost and high-density practical perovskite memory devices.

Tunable Ferroelectricity in Ruddlesden-Popper Halide Perovskites

Ruddlesden-Popper (RP) halide perovskites are the new kids on the block for high-performance perovskite photovoltaics with excellent ambient stability. The layered nature of these perovskites offers an exciting possibility of harnessing their ferroelectric property for photovoltaics. Adjacent polar domains in a ferroelectric material allow the spatial separation of electrons and holes. Presently, the structure-function properties governing the ferroelectric behavior of RP perovskites are an open question. Herein, we realize tunable ferroelectricity in 2-phenylethylammonium (PEA) and methylammonium (MA) RP perovskite (PEA)₂(MA) _n̅-1Pb _n̅I_{3 n̅+1}. Second harmonic generation (SHG) confirms the noncentrosymmetric nature of these polycrystalline thin films, whereas piezoresponse force microscopy and polarization-electric field measurements validate the microscopic and macroscopic ferroelectric properties. Temperature-dependent SHG and dielectric constant measurements uncover a phase transition temperature at around 170 °C in these films. Extensive molecular dynamics simulations support the experimental results and identified the correlated reorientation of MA molecules and ion translations as the source of ferroelectricity. Current-voltage characteristics in the dark reveal the persistence of hysteresis in these devices, which has profound implications for light-harvesting and light-emitting applications. Importantly, our findings disclose a viable approach for engineering the ferroelectric properties of RP perovskites that may unlock new functionalities for perovskite optoelectronics.

Significant THz absorption in CH3NH2 molecular defect-incorporated organic-inorganic hybrid perovskite thin film

The valid strong THz absorption at 1.58 THz was probed in the organic-inorganic hybrid perovskite thin film, CH3NH3PbI3, fabricated by sequential vacuum evaporation method. In usual solution-based methods such as 2-step solution and antisolvent, we observed the relatively weak two main absorption peaks at 0.95 and 1.87 THz. The measured absorption spectrum is analyzed by density-functional theory calculations. The modes at 0.95 and 1.87 THz are assigned to the Pb-I vibrations of the inorganic components in the tetragonal phase. By contrast, the origin of the 1.58 THz absorption is due to the structural deformation of Pb-I bonding at the grain boundary incorporated with a CH3NH2 molecular defect.

Lead-Free All-Inorganic Cesium Tin Iodide Perovskite for Filamentary and Interface-Type Resistive Switching toward Environment-Friendly and Temperature-Tolerant Nonvolatile Memories

Recently, organometallic and all-inorganic halide perovskites (HPs) have become promising materials for resistive switching (RS) nonvolatile memory devices with low power consumption because they show current-voltage hysteresis caused by fast ion migration. However, the toxicity and environmental pollution potential of lead, a common constituent of HPs, has limited the commercial applications of HP-based devices. Here, RS memory devices based on lead-free all-inorganic cesium tin iodide (CsSnI₃) perovskites with temperature tolerance are successfully fabricated. The devices exhibit reproducible and reliable bipolar RS characteristics in both Ag and Au top electrodes (TEs) with different switching mechanisms. The Ag TE devices show filamentary RS behavior with ultralow operating voltages (<0.15 V). In contrast, the Au TE devices have interface-type RS behavior with gradual resistance changes. This suggests that the RS characteristics are attributed to either the formation of metal filaments or the ion migration of defects in HPs under applied electric fields. These distinct mechanisms may permit the opportunity to design devices for specific purposes. This work will pave the way for lead-free all-inorganic HP-based nonvolatile memory for commercial application in HP-based devices.

Tunable hysteresis behaviour related to trap filling dependence of surface barrier in an individual CH3NH3PbI3 micro/nanowire

Hybrid organic-inorganic perovskite (HOIP) materials have remarkable potential in solar cells owing to their high power conversion efficiency and inexpensive preparation. However, their current-voltage (I-V) curves often exhibit hysteresis characteristics, which not only strongly affect the accuracy of measurements but also seriously impair device performance, and, moreover, their actual origin is still the subject of debate. Here, a single HOIP micro/nanowire-based two-terminal device was constructed. Not only can its hysteresis properties be accurately modulated, but also their origin can clearly be identified as variations in the surface barrier related to trap filling. Under illumination of the entire device with visible (VIS) light, two anticlockwise hysteresis loops appear symmetrically in cyclic I-V curves. Interestingly, the cyclic I-V curves can be switchably changed into asymmetrical "8"-shaped hysteresis loops with bipolar resistive switching (RS) features when only the vicinity of one electrode is illuminated. The traps located in the surface space charge region play a crucial role in the tunable hysteresis behaviour. Owing to the presence of abundant surface states, two back-to-back connected diodes related to the surface barrier can be formed in the two-terminal device. With the synergistic assistance of illumination and bias, moreover, the injection and extraction of holes in the surface space charge region can effectively modulate the surface barrier, which triggers the formation of a bipolar RS device. Accordingly, two switchable back-to-back connected bipolar RS devices were built. Regarding the tunable hysteresis with nonvolatile memory properties controlled by the synergistic action of bias and illumination, our results provide a valuable insight into the identification of its origin and, furthermore, also indicate that the HOIP materials have significant potential in nonvolatile memory applications.

Organic and hybrid resistive switching materials and devices

This review presents a timely and comprehensive summary of organic and hybrid materials for nonvolatile resistive switching memory applications in the “More than Moore” era, with particular attention on their designing principles for electronic property tuning and flexible memory performance.

pH-Modulated memristive behavior based on an edible garlic-constructed bio-electronic device

A new type of memristive memory device with an edible garlic-constructed Ag/garlic/fluorine-doped SnO₂(FTO) structure for analog neuromorphic sensor applications was designed.

Lead and HTM Free Stable Two-Dimensional Tin Perovskites with Suitable Band Gap for Solar Cell Applications

Organic-inorganic hybrid perovskites have attracted great attention over the last few years as potential light-harvesting materials for efficient and cost-effective solar cells. However, the use of lead iodide in state-of-the-art perovskite devices may demonstrate an obstacle for future commercialization due to toxicity of lead. Herein we report on the synthesis and characterization of low dimensional tin-based perovskites. We found that the use of symmetrical imidazolium-based cations such as benzimidazolium (Bn) and benzodiimidazolium (Bdi) allow the formation of 2D perovskites with relatively narrow band gaps compared to traditional -NH₃ ⁺ amino groups, with optical band gap values of 1.81 eV and 1.79 eV for Bn₂ SnI₄ and BdiSnI₄ respectively. Furthermore, we demonstrate that the optical properties in this class of perovskites can be tuned by formation of a quasi 2D perovskite with the formula Bn₂ FASn₂ I₇ . Additionally, we investigate the change in band gap in the mixed Sn/Pb solid solution Bn₂ Sn_x Pb_x-1 I₄ . Devices fabricated with Bn₂ SnI₄ show promising efficiencies of around 2.3 %.

Setup to Study the in Situ Evolution of Both Photoluminescence and Absorption during the Processing of Organic or Hybrid Semiconductors

In situ measurement techniques, applied during the solution processing of novel semiconductors such as organic semiconductors or hybrid perovskites, have become more and more important to understand their film formation. In that context, it is crucial to determine how the optical properties, namely photoluminescence (PL) and absorption, evolve during processing. However, until now PL and absorption have mostly been investigated independently, significantly reducing the potential insights into film formation dynamics. To tackle this issue we present the development of a detection system that allows simultaneous measurement of full absorption and PL spectra during solution processing of the investigated film. We also present a spin-coater system attachable to the detection system, where the temperature of the substrate on which the film is processed can be changed. We performed test measurements by spin coating the well-known conjugated polymer P3HT demonstrating the potential of this technique. By considering absorption and corresponding PL, we extract the PL quantum yield (PLQY) during processing, which decreases with substrate temperature. Furthermore, we identify a significant red shift of the PL just prior to the onset of the aggregation process, indicating the importance of chain planarization prior to solid film formation.

Organic-Inorganic Hybrid Halide Perovskites for Memories, Transistors, and Artificial Synapses

Fascinating characteristics of halide perovskites (HPs), which cannot be seen in conventional semiconductors and metal oxides, have boosted the application of HPs in electronic devices beyond optoelectronics such as solar cells, photodetectors, and light-emitting diodes. Here, recent advances in HP-based memory and logic devices such as resistive-switching memories (i.e., resistive random access memory (RRAM) or memristors), transistors, and artificial synapses are reviewed, focusing on inherently exotic properties of HPs: i) tunable bandgap, ii) facile majority carrier control, iii) fast ion migration, and iv) superflexibility. Various fabrication techniques of HP thin films from solution-based methods to vacuum processes are introduced. Up-to-date work in the field, emphasizing the compositional flexibility of HPs, suggest that HPs are promising candidates for next-generation electronic devices. Taking advantages of their unique electrical properties, low-cost and low-temperature synthesis, and compositional and mechanical flexibility, HPs have enormous potential to provide a new platform for future electronic devices and explosively intensive studies will pave the way in finding new HP materials beyond conventional silicon-based semiconductors to keep up with "More-than-Moore" times.

Reset Voltage-Dependent Multilevel Resistive Switching Behavior in CsPb1- xBi xI3 Perovskite-Based Memory Device

All-inorganic CsPb_{1- x}Bi _xI₃ perovskite film was successfully fabricated by incorporating Bi³⁺ in CsPbI₃ to stabilize the cubic lattice. Furthermore, the perovskite film was applied to manufacture a simple Ag/CsPb_{1- x}Bi _xI₃/indium tin oxide (ITO) memory device with a bipolar resistive switching behavior. Nonvolatile, reliable, and reproducible switching properties are demonstrated through retention and endurance test under fully open-air conditions. The memory device also presents highly uniform and long-term stable characteristics. Importantly, by modulating the reset stop voltages, multilevel high-resistance states are observed for the first time in lead halide perovskite memory device. The resistive switching behavior is proposed to explain the formation and partial rupture of conductive multifilament that are dominated by the migration of iodine ions and their corresponding vacancies in perovskite film. This study suggests Ag/CsPb_{1- x}Bi _xI₃/ITO device potential application for multilevel data storage in a nonvolatile memory device.

Synergies of Electrochemical Metallization and Valance Change in All-Inorganic Perovskite Quantum Dots for Resistive Switching

The in-depth understanding of ions' generation and movement inside all-inorganic perovskite quantum dots (CsPbBr₃ QDs), which may lead to a paradigm to break through the conventional von Neumann bottleneck, is strictly limited. Here, it is shown that formation and annihilation of metal conductive filaments and Br^- ion vacancy filaments driven by an external electric field and light irradiation can lead to pronounced resistive-switching effects. Verified by field-emission scanning electron microscopy as well as energy-dispersive X-ray spectroscopy analysis, the resistive switching behavior of CsPbBr₃ QD-based photonic resistive random-access memory (RRAM) is initiated by the electrochemical metallization and valance change. By coupling CsPbBr₃ QD-based RRAM with a p-channel transistor, the novel application of an RRAM-gate field-effect transistor presenting analogous functions of flash memory is further demonstrated. These results may accelerate the technological deployment of all-inorganic perovskite QD-based photonic resistive memory for successful logic application.

Interface State-Induced Negative Differential Resistance Observed in Hybrid Perovskite Resistive Switching Memory

Hybrid organic-inorganic perovskite, well-known as light-absorbing materials in solar cells, have recently attracted considerable interest for applications in resistive switching (RS) memory. A better understanding of the role of interface state in hybrid perovskite materials on RS behavior is essential for the development of practical devices. Here, we study the influence of interface state on the RS behavior of an Au/CH₃NH₃PbI₃/FTO memory device using a simple air exposure method. We observe a transition of RS hysteresis behavior with exposure time. Initially no hysteresis is apparent, but air exposure induces bipolar RS and a negative differential resistance (NDR) phenomenon. The reductions of I/Pb atomic ratio and work function on the film surface are examined using XPS spectra and Kelvin probe technique, verifying the produce of donor-type interface states (e.g., iodine vacancies) during CH₃NH₃PbI₃ film degradation. Studies on complex impedance spectroscopy confirm the responsibility of interface states in NDR behavior. Eventually, the trapping/detrapping of electrons in bulk defects and at interface states accounts for the bipolar RS behavior accompanied with the NDR effect.

A non-volatile "programmable" transparent multilevel ultra-violet perovskite photodetector

Due to their outstanding physical properties, perovskite materials are considered to be promising semiconductors for next-generation optoelectronics. However, these materials are often unstable under an ambient atmosphere and ultra-violet illumination. Therefore, the construction of an air-stable visible light transparent perovskite-based ultra-violet photodetector is still highly challenging. In this study, we go beyond the conventional operation of photodetectors by utilizing the undesired hysteresis loop in the typical current-voltage characteristics of perovskites and design a (C4H9NH3)2PbBr4-based high-performance visible transparent programmable ultra-violet photodetector. The photodetector shows multiple operating levels and can switch from one level to another with a short electric pulse. The photodetector exhibits a fast response time of ∼2 ms, good responsivity of ∼32 mA W-1 and detectivity of 8.5 × 108 Jones with a low working voltage of 0.5 V. Moreover, the photodetector shows long-term stability, and the optoelectronic performance is retained under ambient conditions. This breakthrough in the controlled tunable features opens a new avenue for the development of multipurpose transparent optoelectronic devices.

Surface Instability of Sn-Based Hybrid Perovskite Thin Film, CH3NH3SnI3: The Origin of Its Material Instability

To understand the instability of Sn-based perovskite, CH₃NH₃SnI₃, photoelectron spectroscopy with synchrotron radiation and theoretical calculations, such as density functional theory and ab initio molecular dynamics, were performed. Findings from this experimental and theoretical study highlight the crucial changes of surface-chemical states, the broken chemical bondings in Sn-I, and the depletion of a CH₃-NH₃⁺ cation on the surface region. The material instability origin of Sn-based perovskite can be explained by the chemical state instability in the surface.

Micropatterned 2D Hybrid Perovskite Thin Films with Enhanced Photoluminescence Lifetimes

The application of luminescent materials in display screens and devices requires micropatterned structures. In this work, we have successfully printed microstructures of a two-dimensional (2D), orange-colored organic/inorganic hybrid perovskite ((C₆H₅CH₂NH₃)₂PbI₄) using two different soft lithography techniques. Notably, both techniques yield microstructures with very high aspect ratios in the range of 1.5-1.8. X-ray diffraction reveals a strong preferential orientation of the crystallites along the c-axis in both patterned structures, when compared to nonpatterned, drop-casted thin films. Furthermore, (time-resolved) photoluminescence (PL) measurements reveal that the optical properties of (C₆H₅CH₂NH₃)₂PbI₄ are conserved upon patterning. We find that the larger grain sizes of the patterned films with respect to the nonpatterned film give rise to an enhanced PL lifetime. Thus, our results demonstrate easy and cost-effective ways to manufacture patterns of 2D organic/inorganic hybrid perovskites, while even improving their optical properties. This demonstrates the potential use of color-tunable 2D hybrids in optoelectronic devices.

Boosting Visible Light Absorption of Metal-Oxide-Based Phototransistors via Heterogeneous In-Ga-Zn-O and CH3NH3PbI3 Films

To broaden the availability and application of metal-oxide (M-O)-based optoelectronic devices, we suggest heterogeneous phototransistors composed of In-Ga-Zn-O (IGZO) and methylammonium lead iodide (CH₃NH₃PbI₃) layers, which act as the amplifier layer (channel layer) and absorption layer, respectively. These heterogeneous phototransistors showed low persistence photocurrent compared with IGZO-only phototransistors and exhibited high photoresponsivity of 61 A/W, photosensitivity of 3.48 × 10⁶, detectivity of 9.42 × 10¹⁰ Jones, external quantum efficiency of 154% in an optimized structure, and high photoresponsivity under water exposure via the deposition of silicon dioxide as a passivation layer. On the basis of these electrical results and various analyses, we determined that CH₃NH₃PbI₃ could be activated as a light absorption layer, current barrier, and plasma damage blocking layer, which would serve to widen the range of applications of M-O-based optoelectronic devices with high photoresponsivity and reliability under visible light illumination.

Pseudohalide-Induced 2D (CH3 NH3 )2 PbI2 (SCN)2 Perovskite for Ternary Resistive Memory with High Performance

Recently, organic-inorganic hybrid perovskites (OIHP) are studied in memory devices, but ternary resistive memory with three states based on OIHP is not achieved yet. In this work, ternary resistive memory based on hybrid perovskite is achieved with a high device yield (75%), much higher than most organic ternary resistive memories. The pseudohalide-induced 2D (CH₃ NH₃ )₂ PbI₂ (SCN)₂ perovskite thin film is prepared by using a one-step solution method and fabricated into Al/perovskite film/indium-tin oxide (glass substrate as well as flexible polyethylene terephthalate substrate) random resistive access memory (RRAM) devices. The three states have a conductivity ratio of 1:10³ :10⁷ , long retention over 10 000 s, and good endurance properties. The electrode area variation, impedance test, and current-voltage plotting show that the two resistance switches are attributable to the charge trap filling due to the effect of unscreened defect in 2D nanosheets and the formation of conductive filaments, respectively. This work paves way for stable perovskite multilevel RRAMs in ambient atmosphere.

Enhancement of memory margins in the polymer composite of [6,6]-phenyl-C61-butyric acid methyl ester and polystyrene

Memory devices based on composites of polystyrene (PS) and [6,6]-phenyl-C₆₁-butyric acid methyl ester (PCBM) were investigated with bistable resistive switching behavior. Current-voltage (I-V) curves for indium-tin-oxide (ITO)/PS + PCBM/Al devices with 33 wt% PCBM showed non-volatile, rewritable, flash memory properties with a maximum ON/OFF current ratio of 1 × 10⁴, which was 100 times larger than the ON/OFF ratio of the device with 5 wt% PCBM. For ITO/PS + PCBM/Al devices with 33 wt% PCBM, the write-read-erase-read test cycles demonstrated the bistable devices with ON and OFF states at the same voltage. The programmable ON and OFF states endured up to 10⁴ read pulses and possessed a retention time of over 10⁵ s, indicative of the memory stability of the device. In the OFF state, the I-V curve at lower voltages up to 0.45 V was attributed to the thermionic emission mechanism, and the I-V characteristics in the applied voltage above 0.5 V dominantly followed the space-charge-limited-current behaviors. In the ON state, the curve in the applied voltage range was related to an Ohmic mechanism.

Ferroelectric-mediated filamentary resistive switching in P(VDF-TrFE)/ZnO nanocomposite films

Organic ReRAMs based on ferroelectric P(VDF-TrFE) and ZnO NPs blends exhibiting bipolar resistive switching and a high ON/OFF ratio were realized using a low-cost solution process.

Nonvolatile ternary resistive switching memory devices based on the polymer composites containing zinc oxide nanoparticles

Nonvolatile ternary memory devices were fabricated from the composites polymer blends containing zinc oxide (ZnO) nanoparticles.

Defects in metal triiodide perovskite materials towards high-performance solar cells: origin, impact, characterization, and engineering

The progress of defect science in metal triiodide perovskite is critically reviewed, including the origin, impacts, characterization, and engineering.

Solution-processed resistive switching memory devices based on hybrid organic–inorganic materials and composites

We review emerging low-cost solution-processed resistive random-access memory (ReRAM) made of either hybrid nanocomposites or hybrid organo-lead halide perovskites.

Extremely Low Operating Current Resistive Memory Based on Exfoliated 2D Perovskite Single Crystals for Neuromorphic Computing

Extremely low energy consumption neuromorphic computing is required to achieve massively parallel information processing on par with the human brain. To achieve this goal, resistive memories based on materials with ionic transport and extremely low operating current are required. Extremely low operating current allows for low power operation by minimizing the program, erase, and read currents. However, materials currently used in resistive memories, such as defective HfO_x, AlO_x, TaO_x, etc., cannot suppress electronic transport (i.e., leakage current) while allowing good ionic transport. Here, we show that 2D Ruddlesden-Popper phase hybrid lead bromide perovskite single crystals are promising materials for low operating current nanodevice applications because of their mixed electronic and ionic transport and ease of fabrication. Ionic transport in the exfoliated 2D perovskite layer is evident via the migration of bromide ions. Filaments with a diameter of approximately 20 nm are visualized, and resistive memories with extremely low program current down to 10 pA are achieved, a value at least 1 order of magnitude lower than conventional materials. The ionic migration and diffusion as an artificial synapse is realized in the 2D layered perovskites at the pA level, which can enable extremely low energy neuromorphic computing.

Metal-Halide Perovskite Transistors for Printed Electronics: Challenges and Opportunities

Following the unprecedented rise in photovoltaic power conversion efficiencies during the past five years, metal-halide perovskites (MHPs) have emerged as a new and highly promising class of solar-energy materials. Their extraordinary electrical and optical properties combined with the abundance of the raw materials, the simplicity of synthetic routes, and processing versatility make MHPs ideal for cost-efficient, large-volume manufacturing of a plethora of optoelectronic devices that span far beyond photovoltaics. Herein looks beyond current applications in the field of energy, to the area of large-area electronics using MHPs as the semiconductor material. A comprehensive overview of the relevant fundamental material properties of MHPs, including crystal structure, electronic states, and charge transport, is provided first. Thereafter, recent demonstrations of MHP-based thin-film transistors and their application in logic circuits, as well as bi-functional devices such as light-sensing and light-emitting transistors, are discussed. Finally, the challenges and opportunities in the area of MHPs-based electronics, with particular emphasis on manufacturing, stability, and health and environmental concerns, are highlighted.

Memory effect behavior with respect to the crystal grain size in the organic-inorganic hybrid perovskite nonvolatile resistive random access memory

The crystal grain size of CH₃NH₃PbI₃ (MAPbI₃) organic-inorganic hybrid perovskite (OHP) film was controllable in the range from ~60 nm to ~600 nm by non-solvents inter-diffusion controlled crystallization process in dripping crystallization method for the formation of perovskite film. The MAPbI₃ OHP non-volatile resistive random access memory with ~60 nm crystal grain size exhibited >0.1 TB/in² storage capacity, >600 cycles endurance, >10⁴ s data retention time, ~0.7 V set, and ~-0.61 V re-set bias voltage.

Enhanced Endurance Organolead Halide Perovskite Resistive Switching Memories Operable under an Extremely Low Bending Radius

It was demonstrated that organolead halide perovskites (OHPs) show a resistive switching behavior with an ultralow electric field of a few kilovolts per centimeter. However, a slow switching time and relatively short endurance remain major obstacles for the realization of the next-generation memory. Here, we report a performance-enhanced OHP resistive switching device. To fabricate topologically and electronically improved OHP thin films, we added hydroiodic acid solution (for an additive) in the precursor solution of the OHP. With drastically improved morphology such as small grain size, low peak-to-valley depth, and precise thickness, the OHP thin films showed an excellent performance as insulating layers in Ag/CH₃NH₃PbI₃/Pt cells, with an endurance of over 10³ cycles, a high on/off ratio of 10⁶, and an operation speed of 640 μs and without electroforming. We suggest plausible resistive switching and conduction mechanisms with current-voltage characteristics measured at various temperatures and with different top electrodes and device structures. Beyond the extended endurance, highly flexible resistive switching devices with a minimum bending radius of 5 mm create opportunities for use in flexible and wearable electronic devices.

Structural Investigation of Cesium Lead Halide Perovskites for High-Efficiency Quantum Dot Light-Emitting Diodes

We have investigated the effect of reaction temperature of hot-injection method on the structural properties of CsPbX₃ (X: Br, I, Cl) perovskite nanocrystals (NCs) using small- and wide-angle X-ray scattering. It is confirmed that the size of the NCs decreased as the reaction temperature decreased, resulting in stronger quantum confinement. The cubic-phase perovskite NCs formed despite the fact that the reaction temperatures increased from 140 to 180 °C; however, monodispersive NC cubes that are required for densely packing self-assembly film were formed only at lower temperatures. From the X-ray scattering measurements, the spin-coated film from more monodispersive perovskite nanocubes synthesized at lower temperatures resulted in more preferred orientation. This dense-packing perovskite film with preferred orientation yielded efficient light-emitting diode (LED) performance. Thus the dense-packing structure of NC assemblies formed after spin-coating should be considered for high-efficient LEDs based on perovskite quantum dots in addition to quantum confinement effect of the quantum dots.

A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic-inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next-generation memory devices, but, for practical applications, these materials should be utilized in high-density data-storage devices. Here, nanoscale memory devices are fabricated by sequential vapor deposition of organolead halide perovskite (OHP) CH₃ NH₃ PbI₃ layers on wafers perforated with 250 nm via-holes. These devices have bipolar resistive switching properties, and show low-voltage operation, fast switching speed (200 ns), good endurance, and data-retention time >10⁵ s. Moreover, the use of sequential vapor deposition is extended to deposit CH₃ NH₃ PbI₃ as the memory element in a cross-point array structure. This method to fabricate high-density memory devices could be used for memory cells that occupy large areas, and to overcome the scaling limit of existing methods; it also presents a way to use OHPs to increase memory storage capacity.

Iodine Vacancy Redistribution in Organic-Inorganic Halide Perovskite Films and Resistive Switching Effects

Organic-inorganic halide perovskite (OHP) materials, for example, CH₃ NH₃ PbI₃ (MAPbI₃ ), have attracted significant interest for applications such as solar cells, photodectors, light-emitting diodes, and lasers. Previous studies have shown that charged defects can migrate in perovskites under an electric field and/or light illumination, potentially preventing these devices from practical applications. Understanding and control of the defect generation and movement will not only lead to more stable devices but also new device concepts. Here, it is shown that the formation/annihilation of iodine vacancies (V_I 's) in MAPbI₃ films, driven by electric fields and light illumination, can induce pronounced resistive switching effects. Due to a low diffusion energy barrier (≈0.17 eV), the V_I 's can readily drift under an electric field, and spontaneously diffuse with a concentration gradient. It is shown that the V_I diffusion process can be suppressed by controlling the affinity of the contact electrode material to I^- ions, or by light illumination. An electrical-write and optical-erase memory element is further demonstrated by coupling ion migration with electric fields and light illumination. These results provide guidance toward improved stability and performance of perovskite-based optoelectronic systems, and can lead to the development of solid-state devices that couple ionics, electronics, and optics.

Memristive property's effects on the I-V characteristics of perovskite solar cells

The unfavorable I–V characteristics of perovskite solar cells (PSCs), such as the I–V hysteresis phenomena, have been one major obstacle for their future practical application. However, corresponding analysis based on traditional theories have shown non-negligible flaws and failed for satisfactory explanation. To present a novel mechanism, here we utilize for the first time the memristive property of the perovskite material to analyze the I–V characteristics of PSCs. The obtained joint physical model and the deduced equation may help solving the long-existent mysteries of the I–V characteristics of PSCs. On the basis of our analysis and memristor theory, we also propose an original device optimization strategy for PSCs, which may help further increase their performance to the limit.

Metal Halide Perovskites as Mixed Electronic-Ionic Conductors: Challenges and Opportunities-From Hysteresis to Memristivity

Metal halide perovskites are promising candidates for many classes of different optoelectronic devices. Apart from being a semiconductor, they additionally show ionic conductivity. It expresses itself in slow response times, reversible degradation, and hysteresis in the current-voltage characteristics of solar cells. This Perspective gives a condensed overview about experiments and theory on ion migration in metal halide perovskites focusing on its effects in solar cells. Apart from being a potential stability concern for photovoltaics, ion migration paired with the excellent optoelectronic properties of this material offers opportunities for novel devices such as optically controlled memristors and switchable diodes.

Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi0.95 Co0.05 O3 Film

Perovskite ceramics and single crystals are commonly hard and brittle due to their small maximum elastic strain. Here, large-scale BaTi_0.95 Co_0.05 O₃ (BTCO) film with a SrRuO₃ (SRO) buffered layer on a 10 µm thick mica substrate is flexible with a small bending radius of 1.4 mm and semitransparent for visible light at wavelengths of 500-800 nm. Mica/SRO/BTCO/Au cells show bipolar resistive switching and the high/low resistance ratio is up to 50. The resistive-switching properties show no obvious changes after the 2.2 mm radius memory being written/erased for 360 000 cycles nor after the memory being bent to 3 mm radius for 10 000 times. Most importantly, the memory works properly at 25-180 °C or after being annealed at 500 °C. The flexible and transparent oxide resistive memory has good prospects for application in smart wearable devices and flexible display screens.