Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3

Mesoscopic sliding ferroelectricity enabled photovoltaic random access memory for material-level artificial vision system

Intelligent materials with adaptive response to external stimulation lay foundation to integrate functional systems at the material level. Here, with experimental observation and numerical simulation, we report a delicate nano-electro-mechanical-opto-system naturally embedded in individual multiwall tungsten disulfide nanotubes, which generates a distinct form of in-plane van der Waals sliding ferroelectricity from the unique combination of superlubricity and piezoelectricity. The sliding ferroelectricity enables programmable photovoltaic effect using the multiwall tungsten disulfide nanotube as photovoltaic random-access memory. A complete "four-in-one" artificial vision system that synchronously achieves full functions of detecting, processing, memorizing, and powering is integrated into the nanotube devices. Both labeled supervised learning and unlabeled reinforcement learning algorithms are executable in the artificial vision system to achieve self-driven image recognition. This work provides a distinct strategy to create ferroelectricity in van der Waals materials, and demonstrates how intelligent materials can push electronic system integration at the material level.

A Room-Temperature Ferroelectric Resonant Tunneling Diode

Resonant tunneling is a quantum-mechanical effect in which electron transport is controlled by the discrete energy levels within a quantum-well (QW) structure. A ferroelectric resonant tunneling diode (RTD) exploits the switchable electric polarization state of the QW barrier to tune the device resistance. Here, the discovery of robust room-temperature ferroelectric-modulated resonant tunneling and negative differential resistance (NDR) behaviors in all-perovskite-oxide BaTiO₃ /SrRuO₃ /BaTiO₃ QW structures is reported. The resonant current amplitude and voltage are tunable by the switchable polarization of the BaTiO₃ ferroelectric with the NDR ratio modulated by ≈3 orders of magnitude and an OFF/ON resistance ratio exceeding a factor of 2 × 10⁴ . The observed NDR effect is explained an energy bandgap between Ru-t_2g and Ru-e_g orbitals driven by electron-electron correlations, as follows from density functional theory calculations. This study paves the way for ferroelectric-based quantum-tunneling devices in future oxide electronics.

Control of up-to-down/down-to-up light-induced ferroelectric polarization reversal

Light control of ferroelectric polarization is of interest for the exploitation of ferroelectric thin films in ultrafast data storage and logic functionalities. The rapidly oscillating electric field of light absorbed in a ferroelectric layer can suppress its polarization but cannot selectively reverse its direction. Here we take advantage of the built-in asymmetry at ferroelectric/electrode interfaces to break the up/down symmetry in uniaxial ferroelectrics to promote polarization reversal under illumination. It is shown that appropriate ferroelectric/metal structures allow the direction of the imprint electric field to be selected, which is instrumental for polarization reversal. This ability is further exploited by demonstrating the optical control of the resistance states in a ferroelectric capacitor.

Robust Spin-Dependent Anisotropy of Circularly Polarized Light Detection from Achiral Layered Hybrid Perovskite Ferroelectric Crystals

Circularly polarized light (CPL) detection has sparked overwhelming research interest for its widespread chiroptoelectronic and spintronic applications. Ferroelectric materials, especially emerging layered hybrid perovskite ferroelectrics, exhibiting striking bulk photovoltaic effect (BPVE) present significant possibilities for CPL detection by a distinctive working concept. Herein, for the first time, we demonstrate the realization of robust angular anisotropy of CPL detection in a new layered hybrid perovskite ferroelectric crystal (CPA)₂FAPb₂Br₇ (1, CPA is chloropropylammonium, FA is formamidinium), which crystallized in an optically active achiral polar point group. Benefiting from the notable spontaneous polarization (5.1 μC/cm²) and excellent semiconducting characteristics, single crystals of 1 exhibit remarkable BPVE under light illumination, with a high current on/off switching ratio (ca. 10³). More intriguingly, driven by the angular carrier drift originating from spin-dependent BPVE in optically active ferroelectrics, 1 displays highly sensitive self-powered CPL detection performance, showing a robust angular anisotropy factor up to 0.98, which is far more than those achieved by material intrinsic chirality. This work provides an unprecedented approach for realizing highly sensitive CPL detection, which sheds light on the further design of optically active ferroelectrics for chiral photonic applications.

Incorporating an Aromatic Cationic Spacer to Assemble 2D Polar Perovskite Crystals toward Self-Powered Detection of Quite Weak Polarized Light

Two-dimensional (2D) hybrid perovskites with intrinsic attributes of structural and optical anisotropy are holding a bright promise for polarization-sensitive photodetection. However, studies on self-powered detection to quite weak polarized light remain scarce in this 2D family. By incorporating an aromatic spacer into the 3D cubic prototype, we have successfully assembled a new 2D hybrid perovskite with a polar motif, (FPEA)₂(MA)Pb₂I₇ (FMPI, where FPEA is 4-fluorophenethylammonium and MA is methylammonium). Its unique 2D quantum-well structure allows optical absorption dichroism with a large ratio of ∼3.15, and the natural polarity results in a notable bulk photovoltaic effect. Further, centimeter-size crystals (10 × 10 × 3 mm³) of FMPI were facilely obtained by the temperature cooling method, and its crystal-based detectors enable excellent self-powered detection of quite weak polarized light, showing a notable polarization-sensitive ratio (∼1.5), extremely low detection limit (∼100 nW/cm²), and antifatigued stability. The alloyed aromatic cationic spacers facilitate the polarity and enhanced phase stability. This study paves a way for further exploration of new 2D perovskite candidates toward optoelectronic device applications.

Flexoelectricity-Enhanced Photovoltaic Effect in Self-Polarized Flexible PZT Nanowire Array Devices

In this investigation, we report the flexoelectricity-enhanced photovoltaic (FPV) effect in a flexible Pb(Zr_0.52Ti_0.48)O₃ nanowire (PZT NW) array/PDMS (polydimethylsiloxane) nanocomposite. The simulation result of density functional theory (DFT) indicated that the FPV effect in PZT NWs can be greatly affected by the interactions of the strain gradients with the internal field generated by self-polarization. We found that when the nanocomposite film was curved down, the photovoltaic current of the aligned PZT-NW/PDMS composite increased by 84.6-fold and 27.6-fold compared with the PZT-nanoparticles/PDMS and randomly aligned PZT-NW/PDMS nanocomposites at the same curvature, respectively. This is mainly ascribed to the increased flexoelectricity in the aligned PZT-NW/PDMS nanocomposite. This study will contribute to a full understanding of the influence of nanoparticle shape on the flexophotovoltaic effect of nanocomposites. It will have potential use in nanocomposites for the study of the FPV effect and associated applications.

Engineering the Defects and Microstructures in Ferroelectrics for Enhanced/Novel Properties: An Emerging Way to Cope with Energy Crisis and Environmental Pollution

In the past century, ferroelectrics are well known in electroceramics and microelectronics for their unique ferroelectric, piezoelectric, pyroelectric, and photovoltaic effects. Nowadays, the advances in understanding and tuning of these properties have greatly promoted a broader application potential especially in energy and environmental fields, by harvesting solar, mechanical, and heat energies. For example, high piezoelectricity and high pyroelectricity can be designed by defect or microstructure engineering for piezo- and pyro-catalyst, respectively. Moreover, highly piezoelectric and broadband (UV-Vis-NIR) light-responsive ferroelectrics can be designed via defect engineering, giving rise to a new concept of photoferroelectrics for efficient photocatalysis, piezocatalysis, pyrocatalysis, and related cocatalysis. This article first summarizes the recent developments in ferroelectrics in terms of piezoelectricity, pyroelectricity, and photovoltaic effects based on defect and microstructure engineering. Then, the potential applications in energy generation (i.e., photovoltaic effect, H2 generation, and self-powered multisource energy harvesting and signal sensing) and environmental protection (i.e., photo-piezo-pyro- cocatalytic dye degradation and CO2 reduction) are reviewed. Finally, the outlook and challenges are discussed. This article not only covers an overview of the state-of-art advances of ferroelectrics, but also prospects their applications in coping with energy crisis and environmental pollution.

Large-Scale Domain Engineering in Two-Dimensional Ferroelectric CuInP2S6 via Giant Flexoelectric Effect

Room-temperature ferroelectricity in two-dimensional (2D) materials is a potential for developing atomic-scale functional devices. However, as a key step for the technology implementations of 2D ferroelectrics in electronics, the controllable generation of uniform domains remains challenging at the current stage because domain engineering through an external electric field at the 2D limit inevitably leads to large leakage currents and material breakdown. Here, we demonstrate a voltage-free method, the flexoelectric effect, to artificially generate large-scale stripe domains in 2D ferroelectric CuInP₂S₆ with single domain lateral size at the scale of several hundred microns. With giant strain gradients (∼10⁶ m^-1), we mechanically switch the out-of-plane polarization in ultrathin CuInP₂S₆. The flexoelectric control of polarization is understood with a distorted Landau-Ginzburg-Devonshire double well model. Through substrate strain engineering, the stripe domain density is controllable. Our results highlight the potential of developing van der Waals ferroelectrics-based flexible electronics.

Enhanced Ferroelectric and Piezoelectric Properties in Graphene-Electroded Pb(Zr,Ti)O3 Thin Films

While using ferroelectric polarization to tune the functional properties of 2D materials has been extensively studied recently, the effects of 2D materials on the ferroelectricity and piezoelectricity of ferroelectrics are much less explored. In this work, we report markedly enhanced ferroelectric and piezoelectric properties of graphene/Pb(Zr_0.52Ti_0.48)O₃/SrRuO₃ (GR/PZT/SRO) capacitors. Compared with conventional metal-electroded ferroelectric capacitors, the GR/PZT/SRO capacitors exhibit more abrupt polarization switching, larger switchable polarization, lower leakage current, and smaller coercive voltage. Moreover, with graphene electrodes, the ferroelectric properties of PZT capacitors are much more stable against aging. The enhanced ferroelectric behaviors in GR/PZT/SRO capacitors can be attributed to an improved interface with fewer defects and inhibited growth of defective interfacial layer resulting from the graphene protection. Because of the atomic thickness and extraordinary mechanical flexibility of graphene, the piezoelectric response in PZT with graphene electrode is about four times larger than the one with an Au electrode. Our findings on the enhanced ferroelectric and piezoelectric properties of PZT with 2D electrodes advance the understanding of the 2D/PZT interface and provide solutions for developing high-performance ferroelectrics devices.

Realization of In-Plane Polarized Light Detection Based on Bulk Photovoltaic Effect in A Polar Van Der Waals Crystal

2D van der Waals materials are widely explored for in-plane polarized light detection owing to their distinctive in-plane anisotropic feature. However, most of these polarized light-sensitive devices root in their low symmetry of in-plane structure and work depending on external power sources, which greatly impedes the simplification of integrated devices and sustainable development. Bulk photovoltaic effect (BPVE), which separates photoexcited carriers via built-in electric field without an external power source and shows an angle-dependence on light polarization, is promising for self-powered polarized light detection to break through the restriction of in-plane anisotropy. Herein, a 2D lead-free van der Waals perovskite (Cl-PMA)₂ CsAgBiBr₇ (1, Cl-PMA = 4-Chlorobenzylamine) is successfully designed through the dimension reduction strategy. 1 exhibits BPVE with an open-circuited photovoltage up to ≈0.5 V. Driven by the BPVE, self-powered in-plane polarized light detection with a large polarization ratio of 1.3 is obtained for 1. As far as it is known, the first in-plane polarized light detection in hybrid perovskites based on BPVE is realized here. This work highlights the strategy of designing lead-free hybrid perovskite with BPVE and opens an avenue for exploiting in-plane highly sensitive polarized light detection in 2D van der Waals materials.

Ferroelectric photosensor network: an advanced hardware solution to real-time machine vision

Nowadays the development of machine vision is oriented toward real-time applications such as autonomous driving. This demands a hardware solution with low latency, high energy efficiency, and good reliability. Here, we demonstrate a robust and self-powered in-sensor computing paradigm with a ferroelectric photosensor network (FE-PS-NET). The FE-PS-NET, constituted by ferroelectric photosensors (FE-PSs) with tunable photoresponsivities, is capable of simultaneously capturing and processing images. In each FE-PS, self-powered photovoltaic responses, modulated by remanent polarization of an epitaxial ferroelectric Pb(Zr0.2Ti0.8)O3 layer, show not only multiple nonvolatile levels but also sign reversibility, enabling the representation of a signed weight in a single device and hence reducing the hardware overhead for network construction. With multiple FE-PSs wired together, the FE-PS-NET acts on its own as an artificial neural network. In situ multiply-accumulate operation between an input image and a stored photoresponsivity matrix is demonstrated in the FE-PS-NET. Moreover, the FE-PS-NET is faultlessly competent for real-time image processing functionalities, including binary classification between 'X' and 'T' patterns with 100% accuracy and edge detection for an arrow sign with an F-Measure of 1 (under 365 nm ultraviolet light). This study highlights the great potential of ferroelectric photovoltaics as the hardware basis of real-time machine vision.

Tailoring Interlayered Spacers of Two-Dimensional Cesium-Based Perovskite Ferroelectrics toward Exceptional Ferro-Pyro-Phototronic Effects

Ferro-pyro-phototronic (FPP) effect is a triple coupling of ferroelectricity, light-induced pyroelectricity, and photo-excitation, which holds a bright promise for next-generation modern optoelectronic devices. However, except for few oxides (e.g., BaTiO₃ ), new FPP-active candidates remain extremely scarce due to the knowledge lacking on the underlying role of three coupling components. By tailoring the interlayered spacers, the authors present a series of 2D cesium-based perovskite ferroelectrics, (A')₂ CsPb₂ Br₇ (where A'-site cation is organic spacer), showing remarkable FPP-active properties. As expected, the dynamic ordering and reorientation of spacers along with atomic displacement of Cs⁺ in the perovskite cavity lead to their ferroelectric polarizations. Particularly, exceptional FPP properties are created through this cooperation; the most FPP-active candidate (n-hexylammonium)₂ CsPb₂ Br₇ endows a giant contrast up to 1500% for photopyroelectric current to photovoltaic signal. This figure-of-merit is far beyond most inorganic oxide counterparts, such as ≈110% for BaTiO₃ . Further, the electric switching and controlling of FPP directions confirm a crucial role of ferroelectric polarization to this coupling effect. To the authors' best knowledge, this is the first study on an FPP-active candidate of 2D hybrid perovskites, which affords a new avenue to design ferroelectrics with targeted physical properties and forward their potentials to smart optoelectronic device application.

Ferroelectricity in a semiconducting all-inorganic halide perovskite

Ferroelectric semiconductors are rare materials with both spontaneous polarizations and visible light absorptions that are promising for designing functional photoferroelectrics, such as optical switches and ferroelectric photovoltaics. The emerging halide perovskites with remarkable semiconducting properties also have the potential of being ferroelectric, yet the evidence of robust ferroelectricity in the typical three-dimensional hybrid halide perovskites has been elusive. Here, we report on the investigation of ferroelectricity in all-inorganic halide perovskites, CsGeX3, with bandgaps of 1.6 to 3.3 eV. Their ferroelectricity originates from the lone pair stereochemical activity in Ge (II) that promotes the ion displacement. This gives rise to their spontaneous polarizations of ~10 to 20 μC/cm2, evidenced by both ab initio calculations and key experiments including atomic-level ionic displacement vector mapping and ferroelectric hysteresis loop measurement. Furthermore, characteristic ferroelectric domain patterns on the well-defined CsGeBr3 nanoplates are imaged with both piezo-response force microscopy and nonlinear optical microscopic method.

Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO3/BiFeO3 Multilayers

Interfaces between complex oxides provide a unique opportunity to discover novel interfacial physics and functionalities. Here, we fabricate the multilayers of itinerant ferromagnet SrRuO₃ (SRO) and multiferroic BiFeO₃ (BFO) with atomically sharp interfaces. Atomically resolved transmission electron microscopy reveals that a large ionic displacement in BFO can penetrate into SRO layers near the BFO/SRO interfaces to a depth of 2-3 unit cells, indicating the ferroelectric proximity effect. A topological Hall effect is indicated by hump-like anomalies in the Hall measurements of the multilayer with a moderate thickness of the SRO layer. With magnetic measurements, it can be further confirmed that each SRO layer in the multilayers can be divided into interfacial and middle regions, which possess different magnetic ground states. Our work highlights the key role of functional heterointerfaces in exotic properties and provides an important guideline to design spintronic devices based on magnetic skyrmions.

Manipulation of current rectification in van der Waals ferroionic CuInP2S6

Developing a single-phase self-rectifying memristor with the continuously tunable feature is structurally desirable and functionally adaptive to dynamic environmental stimuli variations, which is the pursuit of further smart memristors and neuromorphic computing. Herein, we report a van der Waals ferroelectric CuInP2S6 as a single memristor with superior continuous modulation of current and self-rectifying to different bias stimuli (sweeping speed, direction, amplitude, etc.) and external mechanical load. The synergetic contribution of controllable Cu+ ions migration and interfacial Schottky barrier is proposed to dynamically control the current flow and device performance. These outstanding sensitive features make this material possible for being superior candidate for future smart memristors with bidirectional operation mode and strong recognition to input faults and variations.

Ultra-high dielectric tuning performance and double-set resistive switching effect achieved on the Bi2NiMnO6 thin film prepared by sol-gel method

With the development of mobile terminals, tunable capacitors for signal processing and memristors for calculation have received a lot of attention. Combining a tunable capacitor and a memristor can improve the performance of mobile terminals and reduce space requirements. In this article, we report on Bi₂NiMnO₆ (BNMO) films with high dielectric tuning and nonvolatile resistive switching (RS) effects. The BNMO films are fabricated by the sol-gel method and annealed at different temperatures. It exhibits a dielectric tunability of up to 92%. This high dielectric tunability may be attributed to the modulation of the interface dipole by the electric field. When an electric field is applied, the interface dipole of the BNMO film is far away from the interface of the BNMO, and then forms a conductive channel where anions and cations are mixed. The BNMO films are found to have a double-set type effect due to its dielectric tunability properties. This work introduces an ultra-high dielectric tuning material and a new type of RS effect on BNMO thin film, which can achieve tuning and memory behavior on a device.

Materials for a Sustainable Microelectronics Future: Electric Field Control of Magnetism with Multiferroics

This article is written on behalf of many colleagues, collaborators, and researchers in the field of complex oxides as well as current and former students and postdocs who continue to enable and undertake cutting-edge research in the field of multiferroics, magnetoelectrics, and the pursuit of electric-field control of magnetism. What I present is something that is extremely exciting from both a fundamental science and applications perspective and has the potential to revolutionize our world, particularly from a sustainability perspective. To realize this potential will require numerous new innovations, both in the fundamental science arena as well as translating these scientific discoveries into real applications. Thus, this article will attempt to bridge the gap between fundamental materials physics and the actual manifestations of the physical concepts into real-life applications. I hope this article will help spur more translational research within the broad materials community.

Autonomous Design of Photoferroic Ruddlesden-Popper Perovskites for Water Splitting Devices

The use of ferroelectric materials for light-harvesting applications is a possible solution for increasing the efficiency of solar cells and photoelectrocatalytic devices. In this work, we establish a fully autonomous computational workflow to identify light-harvesting materials for water splitting devices based on properties such as stability, size of the band gap, position of the band edges, and ferroelectricity. We have applied this workflow to investigate the Ruddlesden-Popper perovskite class and have identified four new compositions, which show a theoretical efficiency above 5%.

Enabling Distributed Intelligence with Ferroelectric Multifunctionalities

Distributed intelligence involving a large number of smart sensors and edge computing are highly demanded under the backdrop of increasing cyber-physical interactive applications including internet of things. Here, the progresses on ferroelectric materials and their enabled devices promising energy autonomous sensors and smart systems are reviewed, starting with an analysis on the basic characteristics of ferroelectrics, including high dielectric permittivity, switchable spontaneous polarization, piezoelectric, pyroelectric, and bulk photovoltaic effects. As sensors, ferroelectrics can directly convert the stimuli to signals without requiring external power supply in principle. As energy transducers, ferroelectrics can harvest multiple forms of energy with high reliability and durability. As capacitors, ferroelectrics can directly store electrical charges with high power and ability of pulse-mode signal generation. Nonvolatile memories derived from ferroelectrics are able to realize digital processors and systems with ultralow power consumption, sustainable operation with intermittent power supply, and neuromorphic computing. An emphasis is made on the utilization of the multiple extraordinary functionalities of ferroelectrics to enable material-critical device innovations. The ferroelectric characteristics and synergistic functionality combinations are invaluable for realizing distributed sensors and smart systems with energy autonomy.

Photocatalytic Degradation of Cefixime Trihydrate by Bismuth Ferrite Nanoparticles

The present work was carried out to synthesize bismuth ferrite (BFO) nanoparticles by combustion synthesis, and to evaluate the photocatalytic activity of synthesized bismuth ferrite nanoparticles against cefixime trihydrate. BFO nanoparticles were successfully synthesized using bismuth (III) nitrate and iron (III) nitrate by a combustion synthesis method employing different types of fuels such as maltose, succinic acid, cinnamic acid, and lactose. The effects of the different types of fuels on the morphology and size of the bismuth ferrite nanoparticles were investigated. Characterization of the as-obtained bismuth ferrite nanoparticles was carried out by different techniques such as X-ray diffraction (XRD), scanning electron microscopy (SEM), Energy-Dispersive Spectroscopy (EDS), N₂-sorption analysis, Fourier-transform infrared spectroscopy (FT-IR), and ultraviolet-visible (UV-vis) spectroscopy. Photoluminescence studies were also carried out for the various bismuth ferrite nanoparticles obtained. Degradation of cefixime trihydrate was investigated under sunlight to evaluate the photocatalytic properties of the bismuth ferrite nanoparticles, and it was found that the bismuth ferrite nanoparticles followed first-order degradation kinetics in solar irradiation in the degradation of antibiotic, cefixime trihydrate.

Super-Flexible Freestanding BiMnO3 Membranes with Stable Ferroelectricity and Ferromagnetism

Multiferroic materials with flexibility are expected to make great contributions to flexible electronic applications, such as sensors, memories, and wearable devices. In this work, super-flexible freestanding BiMnO₃ membranes with simultaneous ferroelectricity and ferromagnetism are synthesized using water-soluble Sr₃ Al₂ O₆ as the sacrificial buffer layer. The super-flexibility of BiMnO₃ membranes is demonstrated by undergoing an ≈180° folding during an in situ bending test, which is consistent with the results of first-principles calculations. The piezoelectric signal under a bending radius of ≈500 µm confirms the stable existence of electric polarization in freestanding BiMnO₃ membranes. Moreover, the stable ferromagnetism of freestanding BiMnO₃ membranes is demonstrated after 100 times bending cycles with a bending radius of ≈2 mm. 5.1% uniaxial tensile strain is achieved in freestanding BiMnO₃ membranes, and the piezoresponse force microscopy (PFM) phase retention behaviors confirm that the ferroelectricity of membranes can survive stably up to the strain of 1.7%. These super-flexible membranes with stable ferroelectricity and ferromagnetism pave ways to the realizations of multifunctional flexible electronics.

Integrating Band Engineering and the Flexoelectric Effect Induced by a Composition Gradient for High Photocurrent Density in Bismuth Ferrite Films

Photovoltaic energy as one of the important alternatives to traditional fossil fuels has always been a research hot spot in the field of renewable and clean solar energy. Very recently, the anomalous ferroelectric photovoltaic effect in multiferroic bismuth ferrite (BiFeO₃) has attracted much attention due to the above-bandgap photovoltage and switchable photocurrent. However, its photocurrent density mostly in the magnitudes of μA/cm² resulted in a poor power conversion efficiency, which severely hampered its practical application as a photovoltaic device. In this case, a novel approach was designed to improve the photocurrent density of BiFeO₃ through the cooperative effect of the gradient distribution of oxygen vacancies and consequently induced the flexoelectric effect realized in the (La, Co) gradient-doped BiFeO₃ multilayers. Subsequent results and analysis indicated that the photocurrent density of the gradient-doped multilayer BiFeO₃ sample was nearly 3 times as much as that of the conventional doped single-layer sample. Furthermore, a possible mechanism was proposed herein to demonstrate roles of band engineering and the flexoelectric effect on the photovoltaic performance of the gradient-doped BiFeO₃ film.

Centimeter-Sized Single Crystal of a One-Dimensional Lead-Free Mixed-Cation Perovskite Ferroelectric for Highly Polarization Sensitive Photodetection

Linear dichroic anisotropic photonic materials are highly attractive due to their great potentials in many applications, which in combination with the ferroelectric properties could broaden their research and applications. However, to date, the linear dichroism conversion phenomenon has not been observed in one-dimensional (1D) large-size single-crystal materials: in particular, lead-free perovskite ferroelectric crystals. Here, we propose a new ferroelectric design strategy: namely, partial organic cation substitution for precisely designing 1D polarization-sensitive perovskite ferroelectrics. As an example, the 1D mixed-cation perovskite ferroelectric (n-propylammonium)(methylammonium)SbBr₅ was synthesized, which exhibits a fascinating ferroelectricity with a notable reversible polarization of 2.9 μC/cm² and a large ferroelectricity-driven polarization ratio of 6.9. Importantly, the single-crystalline photodetectors also exhibit superior optoelectronic anisotropic performances at the paraelectric phase, having a large photoelectric anisotropy ratio (∼35), an excellent polarization-sensitive dichroism ratio (∼1.31), highly sensitive detectivity up to ∼10⁹ Jones, and a fast response rate (∼45/68 μs). This finding provides a significant and effective pathway for the targeted design of new functional lead-free linear dichroic anisotropic photonic ferroelectrics.

Bulk Photovoltaic Effect Driven by Collective Excitations in a Correlated Insulator

We investigate the bulk photovoltaic effect, which rectifies light into electric current, in a collective quantum state with correlation driven electronic ferroelectricity. We show via explicit real-time dynamical calculations that the effect of the applied electric field on the electronic order parameter leads to a strong enhancement of the bulk photovoltaic effect relative to the values obtained in a conventional insulator. The enhancements include both resonant enhancements at sub-band-gap frequencies, arising from excitation of optically active collective modes, and broadband enhancements arising from nonresonant deformations of the electronic order. The deformable electronic order parameter produces an injection current contribution to the bulk photovoltaic effect that is entirely absent in a rigid-band approximation to a time-reversal symmetric material. Our findings establish that correlation effects can lead to the bulk photovoltaic effect and demonstrate that the collective behavior of ordered states can yield large nonlinear optical responses.

Enhancing the bulk photovoltaic effect by tuning domain walls in epitaxial BiFeO3films

In this letter, the role of domain wall (DW) on bulk photovoltaic effect (BPV) effect in BiFeO₃(BFO) films was studied by x-ray reciprocal space mapping and conductive atomic force microscope. It was found that the domain structure and DW can be tuned by controlling the epitaxial orientation of BFO film. Remarkably, under 1 sun AM 1.5 G illumination, the 109° DW enhances the transport of photogenerated carriers and simultaneously improves the conductivity and power conversion efficiency (PCE). The short-circuit current density and PCE can reach 171.15μA cm^-2and 0.1127%, respectively. Therefore, our study reveals the correlation between the DW and the BPV effect in BFO film and provides a new pathway to improve the PCE of BFO-based photovoltaic device.

Dimension effect on ferroelectricity: a first-principles study on GeS nanoribbons

Low-dimensional ferroelectricity has attracted enormous attention due to its applications in miniaturized devices and understanding the dimension effect on ferroelectricity is of significant importance. Based on first-principles calculations, we have investigated the dimension effect on the ferroelectricity of group-IV monochalcogenide MX nanoribbons. Our results reveal that H-terminated armchair GeSNRs exhibit large in-plane polarization along the ribbon direction which converges to the value of 2D GeS as the width increases, while out-of-plane polarization only arises in those with n = odd number. Interestingly, for bare A-GeSNRs, the structure with small n transforms into a paraelectric phase and the critical width for the PE/FE transition is calculated to be n = 10. On the side of zigzag GeSNRs, H-terminated ribbons possess polarization along both the out-of-plane and width directions, while bare Z-GeSNRs are expected to be polar ferromagnetic metals.

Modulation of Ferroelectric and Optical Properties of La/Co-Doped KNbO3 Ceramics

The phase transition, microscopic morphology and optical and ferroelectric properties are studied in a series of La- and Co-doped KNbO₃-based ceramics. The results show that the doping induces the transformation from the orthorhombic to the cubic phase of KNbO₃, significantly reduces the optical bandgap and simultaneously evidently improves the leakage, with a slight weakening of ferroelectric polarization. Further analysis reveals that (i) the Co doping is responsible for the obvious reduction of the bandgap, whereas it is reversed for the La doping; (ii) the slight deterioration of ferroelectricity is due to the doping-induced remarkable extrinsic defect levels and intrinsic oxygen vacancies; and (iii) the La doping can optimize the defect levels and inhibit the leakage. This investigation should both provide novel insight for exploring the bandgap engineering and ferroelectric properties of KNbO₃, and suggest its potential applications, e.g., photovoltaic and multifunctional materials.

Oxide and Organic–Inorganic Halide Perovskites with Plasmonics for Optoelectronic and Energy Applications: A Contributive Review

The ascension of halide perovskites as outstanding materials for a wide variety of optoelectronic applications has been reported in recent years. They have shown significant potential for the next generation of photovoltaics in particular, with a power conversion efficiency of 25.6% already achieved. On the other hand, oxide perovskites have a longer history and are considered as key elements in many technological applications; they have been examined in depth and applied in various fields, owing to their exceptional variability in terms of compositions and structures, leading to a large set of unique physical and chemical properties. As of today, a sound correlation between these two important material families is still missing, and this contributive review aims to fill this gap. We report a detailed analysis of the main functions and properties of oxide and organic–inorganic halide perovskite, emphasizing existing relationships amongst the specific performance and the structures.

Flexo-photovoltaic effect in MoS2

The theoretical Shockley-Queisser limit of photon-electricity conversion in a conventional p-n junction could be potentially overcome by the bulk photovoltaic effect that uniquely occurs in non-centrosymmetric materials. Using strain-gradient engineering, the flexo-photovoltaic effect, that is, the strain-gradient-induced bulk photovoltaic effect, can be activated in centrosymmetric semiconductors, considerably expanding material choices for future sensing and energy applications. Here we report an experimental demonstration of the flexo-photovoltaic effect in an archetypal two-dimensional material, MoS₂, by using a strain-gradient engineering approach based on the structural inhomogeneity and phase transition of a hybrid system consisting of MoS₂ and VO₂. The experimental bulk photovoltaic coefficient in MoS₂ is orders of magnitude higher than that in most non-centrosymmetric materials. Our findings unveil the fundamental relation between the flexo-photovoltaic effect and a strain gradient in low-dimensional materials, which could potentially inspire the exploration of new optoelectronic phenomena in strain-gradient-engineered materials.

Hybrid System Combining Two-Dimensional Materials and Ferroelectrics and Its Application in Photodetection

Photodetectors are one of the most important components for a future "Internet-of-Things" information society. Compared to the mainstream semiconductor-based photodetectors, emerging devices based on two-dimensional (2D) materials and ferroelectrics as well as their hybrid systems have been extensively studied in recent decades due to their outstanding performances and related interesting physical, electrical, and optoelectronic phenomena. In this paper, we review the photodetection based on 2D materials and ferroelectric hybrid systems. The fundamentals of 2D and ferroelectric materials as well as the interaction in the hybrid system will be introduced. Ferroelectricity modulated optoelectronic properties in the hybrid system will be discussed in detail. After the basics and figures of merit of photodetectors are summarized, the 2D-ferroelectrics devices with different structures including p-n diodes, Schottky diodes, and field-effect transistors will be reviewed and compared. The polarization of ferroelectrics offers the possibility of the modulation and enhancement of the photodetection in the hybrid detectors, which will be discussed in depth. Finally, the challenges and perspectives of the photodetectors based on 2D ferroelectrics will be proposed. This Review outlines the important aspects of the recent development of the hybrid system of 2D and ferroelectric materials, which could interact with each other and thus lead to photodetectors with higher performances. Such a Review will be helpful for the research of emerging physical phenomena and for the design of multifunctional nanoscale electronic and optoelectronic devices.

Effect of polarization rotation on the optical and photovoltaic properties of BiFeO3thin films

Visible-light-active ferroelectric materials are gaining increasing attention due to the unique ferroelectric photovoltaic effect. To boost the light harvesting capability, vast research is devoted to band gap engineering by chemical substitutions, regardless of the side effect on ferroelectric polarization. Here, we focus on how polar order affects the optical and photovoltaic properties. Using BiFeO₃as the model system, we induce the polarization rotation by A-site La substitution, which results in continuous reduction of optical anisotropy of the samples, as revealed by the concerted optical characterizations. This further causes the decrease of angular dependence of ferroelectric photovoltaic effect on the light polarization. The results demonstrate the inner connection of the ferroelectric polarization and optical anisotropy via the lattice degree of freedom.

Reversible Rectification of Microscale Ferroelectric Junctions Employing Liquid Metal Electrodes

Both ferroelectric crystals and liquid metal electrodes have attracted extensive attention for potential applications in next-generation devices and circuits. However, the interface information between ferroelectric crystals and liquid metal electrodes has so far been lacking. To better understand the optoelectronic properties of microscale ferroelectric crystals (potassium tantalate niobate, KTN) and its potential integration with liquid metal electrodes (a "printing ink" for flexible electric circuit production), microscale KTN crystals sandwiched by eutectic gallium indium (EGaIn, a liquid metal) with varied contact geometries were studied. Unlike the bulk KTN crystal junctions, the microscale KTN junctions show electrical rectifying characteristics upon light illumination, and the directionality of the rectification can be reversed by increasing the ambient temperature to a few degrees. Furthermore, a strong suppression of the current upon increasing voltage, that is, the quasi-negative differential resistance, is observed when the microscale KTN is half-enclosed by the EGaIn electrode. Our results show that trapping/detrapping of carriers affected by the crystal size and the ambient temperature is the dominant physical mechanism for these observations. These results not only facilitate a better understanding of charge transport through the microscale ferroelectric crystals but also advance the design of miniaturized hybrid devices.

Growth, Properties and Applications of Bi0.5Na0.5TiO3 Ferroelectric Nanomaterials

The emerging demands for miniaturization of electronics has driven the research into various nanomaterials. Lead-free Bi0.5Na0.5TiO3 (BNT) ferroelectric nanomaterials have drawn great interest owing to their superiorities of large remanent polarization, high pyroelectric and piezoelectric coefficients, unique photovoltaic performance and excellent dielectric properties. As attractive multifunctional ferroelectrics, BNT nanomaterials are widely utilized in various fields, such as energy harvest, energy storage, catalysis as well as sensing. The growing desire for precisely controlling the properties of BNT nanomaterials has led to significant advancements in material design and preparation approaches. BNT ferroelectric nanomaterials exhibit significant potential in fabrication of electronic devices and degradation of waste water, which pushes forward the advancement of the Internet of things and sustainable human development. This article presents an overview of research progresses of BNT ferroelectric nanomaterials, including growth, properties and applications. In addition, future prospects are discussed.

Bismuth species in the coordination sphere of transition metals: synthesis, bonding, coordination chemistry, and reactivity of molecular complexes

This contribution is focused on bismuth species in the coordination sphere of transition metals. In molecular transition metal complexes, three types of Bi-M bonding are considered, namely dative Bi→M interactions (with Bi acting as a donor), dative Bi←M interactions (with Bi acting as an acceptor) and covalent Bi-M interactions (M = transition metal). Synthetic routes to all three classes of compounds are outlined, the Bi-M bonding situation is discussed, trends in the geometric parameters and in the coordination chemistry of the compounds are addressed, and common spectroscopic properties are summarized. As an important part of this contribution, the reactivity of bismuth species in the coordination sphere of transition metal complexes in stoichiometric and catalytic reactions is highlighted.

Bromine-Substitution-Induced High-Tc Two-Dimensional Bilayered Perovskite Photoferroelectric

High-Curie-temperature (T_c) ferroelectrics have exhibited broad applications in optoelectronic devices. Recently, two-dimensional multilayered perovskite ferroelectrics with excellent photoelectric attributes are attracting increasing interest as new systems of photoferroelectrics. However, the effective tuning of the T_c value of a multilayered perovskite photoferroelectric system still remains a huge challenge. Here, by a halogen substitution strategy to introduce bromine atoms on n-propylamine cations, the hybrid perovskite photoferroelectric (3-bromopropylaminium)₂(formamidinium)Pb₂Br₇ (BFPB) with a high T_c value (348.5 K) was obtained. It is notable that BFPB adopts a two-dimensional bilayered inorganic framework, with tight linking to the organic cation by C-Br···Br-Pb halogen···halogen interactions and N-H···Br hydrogen bonds. Intriguingly, in comparison with the prototypical compound (n-propylaminium)₂(formamidinium)Pb₂Br₇, a remarkable augmentation of 85.2 K in the resulting T_c value of BFPB is clearly observed, which further broadens the temperature range of its application. In combination with the remarkable ferroelectric and semiconducting attributes, the reversible bulk photovoltaic effect was realized in single crystals of BFPB. This finding can not only enhance the hybrid perovskite ferroelectric family but also further promote the photoelectric application of ferroelectrics.

Exploring a Fatigue-Free Layered Hybrid Perovskite Ferroelectric for Photovoltaic Non-Volatile Memories

Through a functional unit-transmutation strategy, a fatigue-free layered hybrid perovskite ferroelectric (C₆ H₅ CH₂ NH₃ )₂ CsPb₂ Br₇ (BCPB) has been developed, which demonstrates stable spontaneous polarization (P_s ) of 6.5 μC cm^-2 and high Curie temperature up to 425 K. Meanwhile, BCPB shows splendid bulk photovoltaic effect (BPVE) properties with noticeable zero-bias photocurrent density (5 μA cm^-2 ), and high on/off switching ratio of current (over 3×10⁵ ); these merits even overmatch the most known ferroelectric semiconductor BiFeO₃ . The unique structure with self-regulated net electrical charged layers gives rise to the fatigue-free feature of P_s and BPVE (no significant fatigue after 10⁸ polarity switching cycles), promoting the potential applications of BCPB in photovoltaic non-volatile memories. This work offers an efficient approach for exploring fatigue-free semiconducting ferroelectrics as well as excavates their further applications in next-generation electronic devices.