Nonlinear Optics with 2D Layered Materials

Performance of integrated optical switches based on 2D materials and beyond

Applications of optical switches, such as signal routing and data-intensive computing, are critical in optical interconnects and optical computing. Integrated optical switches enabled by two-dimensional (2D) materials and beyond, such as graphene and black phosphorus, have demonstrated many advantages in terms of speed and energy consumption compared to their conventional silicon-based counterparts. Here we review the state-of-the-art of optical switches enabled by 2D materials and beyond and organize them into several tables. The performance tables and future projections show the frontiers of optical switches fabricated from 2D materials and beyond, providing researchers with an overview of this field and enabling them to identify existing challenges and predict promising research directions.

2D Material Optoelectronics for Information Functional Device Applications: Status and Challenges

Graphene and the following derivative 2D materials have been demonstrated to exhibit rich distinct optoelectronic properties, such as broadband optical response, strong and tunable light-mater interactions, and fast relaxations in the flexible nanoscale. Combining with optical platforms like fibers, waveguides, grating, and resonators, these materials has spurred a variety of active and passive applications recently. Herein, the optical and electrical properties of graphene, transition metal dichalcogenides, black phosphorus, MXene, and their derivative van der Waals heterostructures are comprehensively reviewed, followed by the design and fabrication of these 2D material-based optical structures in implementation. Next, distinct devices, ranging from lasers to light emitters, frequency convertors, modulators, detectors, plasmonic generators, and sensors, are introduced. Finally, the state-of-art investigation progress of 2D material-based optoelectronics offers a promising way to realize new conceptual and high-performance applications for information science and nanotechnology. The outlook on the development trends and important research directions are also put forward.

Vertically-oriented MoS2 nanosheets for nonlinear optical devices

Transition metal dichalcogenides such as MoS₂ represent promising candidates for building blocks of ultra-thin nanophotonic devices. For such applications, vertically-oriented MoS₂ (v-MoS₂) nanosheets could be advantageous as compared to conventional horizontal MoS₂ (h-MoS₂) given that their inherent broken symmetry would favor an enhanced nonlinear response. However, the current lack of a controllable and reproducible fabrication strategy for v-MoS₂ limits the exploration of this potential. Here we present a systematic study of the growth of v-MoS₂ nanosheets based on the sulfurization of a pre-deposited Mo-metal seed layer. We demonstrate that the sulfurization process at high temperatures is driven by the diffusion of sulfur from the vapor-solid interface to the Mo seed layer. Furthermore, we verify an enhanced nonlinear response in the resulting v-MoS₂ nanostructures as compared to their horizontal counterparts. Our results represent a stepping stone towards the fabrication of low-dimensional TMD-based nanostructures for versatile nonlinear nanophotonic devices.

Few-layer metal monochalcogenide saturable absorbers for high-energy Q-switched pulse generation

Two-dimensional layered materials have been widely utilized as nonlinear absorption materials to transfer continue-wave into pulse trains in fiber laser systems. Here, we prepare robust GaSe/GeSe composites with high power bearing capacity as saturable absorbers (SAs) and then investigate their nonlinear optical properties via broadband Z-scan measurement at 800 nm and 1550 nm, respectively. The modulation depths of GaSe/GeSe based SAs are measured to be 11.97% and 7.69% at 1550 nm. After incorporating the GaSe/GeSe SAs into an Erbium-doped fiber laser cavity, passively Q-switched pulse trains could be obtained with repetition rates changing from 83.58 to 136.78 kHz (70.41 to 161.65 kHz). The maximum output power and pulse energy are 52.1 mW/370.67 nJ (GaSe) and 21.6 mW/133.74 nJ (GeSe) under the maximum pump power of 600 mW. The results indicate that GaSe and GeSe possess outstanding thermal stability and could be employed as remarkable saturable absorption materials for high-energy pulses generation.

Precise control of the interlayer twist angle in large scale MoS2 homostructures

Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction—twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS₂ homostructures via the combination of wafer-scale highly-oriented monolayer MoS₂ growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS₂ homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS₂ homostructures, where 30° twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics.

Interlayer twist angle between vertically stacked 2D material layers can trigger exciting fundamental physics. Here, the authors report precise control of interlayer twist angle of stacked centimeter scale multilayer MoS₂ homostructures that enables continuous change in their indirect bandgap, Moiré phonons and electrical properties.

In2Se3 nanosheets for harmonic mode-locked fiber laser

Two-dimensional materials with a sheet structure have excellent optical, electrical and mechanical properties, and have attracted much attention in recent years, especially In₂Se₃ (the N-type semiconductor compound), which has a rapid development in the fields of materials science and optical communication. In this paper, the nonlinear saturation absorption characteristics of In₂Se₃ are studied. The In₂Se₃ nanosheet dispersion can be used in ultrafast photonics applications. The nonlinear absorption is measured by power dependent method, and the modulation depth and saturation intensity are 3.8% and 246.6 MW cm^-2, respectively. More importantly, In₂Se₃ is used as a saturable absorber (SA) in a passively mode-locked erbium-doped fiber laser. The proposed mode-locked fiber laser is demenstrated with a center wavelength of 1529.4 nm, a fundamental frequency of 5.9 MHz, a spectral width of 3.96 nm, a pulse width of 1.38 ps, and a signal-to-noise ratio of 55 dB. For the first time, harmonic mode-locking with a high-repetition rate of 431 MHz is achieved when the pump power is 360 mW corresponding to 73rd-order harmonic mode locking. It can be seen that In₂Se₃ is indeed a new excellent photonic material, which can be used in fiber optic communication, SAs photonics, laser material processing and light modulators.

Nonlinear Optics in Dielectric Guided-Mode Resonant Structures and Resonant Metasurfaces

Nonlinear optics is an important area of photonics research for realizing active optical functionalities such as light emission, frequency conversion, and ultrafast optical switching for applications in optical communication, material processing, precision measurements, spectroscopic sensing and label-free biological imaging. An emerging topic in nonlinear optics research is to realize high efficiency optical functionalities in ultra-small, sub-wavelength length scale structures by leveraging interesting optical resonances in surface relief metasurfaces. Such artificial surfaces can be engineered to support high quality factor resonances for enhanced nonlinear optical interaction by leveraging interesting physical mechanisms. The aim of this review article is to give an overview of the emerging field of nonlinear optics in dielectric based sub-wavelength periodic structures to realize efficient harmonic generators, wavelength mixers, optical switches etc. Dielectric metasurfaces support the realization of high quality-factor resonances with electric field concentrated either inside or in the vicinity of the dielectric media, while at the same time operate at high optical intensities without damage. The periodic dielectric structures considered here are broadly classified into guided-mode resonant structures and resonant metasurfaces. The basic physical mechanisms behind guided-mode resonances, electromagnetically-induced transparency like resonances and bound-states in continuum resonances in periodic photonic structures are discussed. Various nonlinear optical processes studied in such structures with example implementations are also reviewed. Finally, some future directions of interest in terms of realizing large-area metasurfaces, techniques for enhancing the efficiency of the nonlinear processes, heterogenous integration, and extension to non-conventional wavelength ranges in the ultra-violet and infrared region are discussed.

2D Layered Graphene Oxide Films Integrated with Micro-Ring Resonators for Enhanced Nonlinear Optics

Layered 2D graphene oxide (GO) films are integrated with micro-ring resonators (MRRs) to experimentally demonstrate enhanced nonlinear optics. Both uniformly coated (1-5 layers) and patterned (10-50 layers) GO films are integrated on complementary-metal-oxide-semiconductor (CMOS)-compatible doped silica MRRs using a large-area, transfer-free, layer-by-layer GO coating method with precise control of the film thickness. The patterned devices further employ photolithography and lift-off processes to enable precise control of the film placement and coating length. Four-wave-mixing (FWM) measurements for different pump powers and resonant wavelengths show a significant improvement in efficiency of ≈7.6 dB for a uniformly coated device with 1 GO layer and ≈10.3 dB for a patterned device with 50 GO layers. The measurements agree well with theory, with the enhancement in FWM efficiency resulting from the high Kerr nonlinearity and low loss of the GO films combined with the strong light-matter interaction within the MRRs. The dependence of GO's third-order nonlinearity on layer number and pump power is also extracted from the FWM measurements, revealing interesting physical insights about the evolution of the GO films from 2D monolayers to quasi bulk-like behavior. These results confirm the high nonlinear optical performance of integrated photonic resonators incorporated with 2D layered GO films.

Asymptotic Pairwise Dispersion Corrections Can Describe Layered Materials Accurately

A recent study by Tawfik et al. [ Phys. Rev. Mater. 2018, 2, 034005] found that few density functionals, none of which are asymptotic pairwise dispersion methods, describe the geometry and binding of layered materials accurately. Here, we show that the exchange-hole dipole moment (XDM) dispersion model attains excellent results for graphite, hexagonal BN, and transition-metal dichalcogenides. Contrary to what has been argued, successful modeling of layered materials does not necessitate meta-GGA exchange, nonlocal correlation functionals, or the inclusion of three-body dispersion terms. Rather, a GGA functional, combined with a simple asymptotic pairwise dispersion correction, can be reliably used, provided that it properly accounts for the geometric dependence of the dispersion coefficients. The overwhelming contribution to the variation of the pairwise dispersion coefficients comes from the immediate vicinity of an atom and is already present for single layers. Longer-range and interlayer effects are examined in detail for graphite.

Controllable coupling between an ultra-high-Q microtoroid cavity and a graphene monolayer for optical filtering and switching applications

Whispering-gallery-mode optical microresonators have found impactful applications in various areas due to their remarkable properties such as ultra-high quality factor (Q-factor), small mode volume, and strong evanescent field. Among these applications, controllable tuning of the optical Q-factor is vital for on-chip optical modulation and various opto-electronic devices. Here, we report an experimental demonstration with a hybrid structure formed by an ultra-high-Q microtoroid cavity and a graphene monolayer. Thanks to the strong interaction of the evanescent wave with the graphene, the structure allows the Q-factor to be controllably varied in the range of 3.9 × 10⁵ ∼ 6.2 × 10⁷ by engineering optical absorption via changing the gap distance in between. At the same time, a resonant wavelength shift of 32 pm was also observed. Besides, the scheme enables us to approach the critical coupling with a coupling depth of 99.6%. As potential applications in integrated opto-electronic devices, we further use the system to realize a tunable optical filter with tunable bandwidth from 116.5 MHz to 2.2 GHz as well as an optical switch with a maximal extinction ratio of 31 dB and response time of 21 ms.

Controlling Defects in Continuous 2D GaS Films for High-Performance Wavelength-Tunable UV-Discriminating Photodetectors

A chemical vapor deposition method is developed for thickness-controlled (one to four layers), uniform, and continuous films of both defective gallium(II) sulfide (GaS): GaS_0.87 and stoichiometric GaS. The unique degradation mechanism of GaS_0.87 with X-ray photoelectron spectroscopy and annular dark-field scanning transmission electron microscopy is studied, and it is found that the poor stability and weak optical signal from GaS are strongly related to photo-induced oxidation at defects. An enhanced stability of the stoichiometric GaS is demonstrated under laser and strong UV light, and by controlling defects in GaS, the photoresponse range can be changed from vis-to-UV to UV-discriminating. The stoichiometric GaS is suitable for large-scale, UV-sensitive, high-performance photodetector arrays for information encoding under large vis-light noise, with short response time (<66 ms), excellent UV photoresponsivity (4.7 A W^-1 for trilayer GaS), and 26-times increase of signal-to-noise ratio compared with small-bandgap 2D semiconductors. By comprehensive characterizations from atomic-scale structures to large-scale device performances in 2D semiconductors, the study provides insights into the role of defects, the importance of neglected material-quality control, and how to enhance device performance, and both layer-controlled defective GaS_0.87 and stoichiometric GaS prove to be promising platforms for study of novel phenomena and new applications.

Continuous Wave Sum Frequency Generation and Imaging of Monolayer and Heterobilayer Two-Dimensional Semiconductors

We report continuous-wave second harmonic and sum frequency generation from two-dimensional transition metal dichalcogenide monolayers and their heterostructures with pump irradiances several orders of magnitude lower than those of conventional pulsed experiments. The high nonlinear efficiency originates from above-gap excitons in the band nesting regions, as revealed by wavelength-dependent second order optical susceptibilities quantified in four common monolayer transition metal dichalcogenides. Using sum frequency excitation spectroscopy and imaging, we identify and distinguish one- and two-photon resonances in both monolayers and heterobilayers. Data for heterostructures reveal responses from constituent layers accompanied by nonlinear signal correlated with interlayer transitions. We demonstrate spatial mapping of heterogeneous interlayer coupling by sum frequency and second harmonic confocal microscopy on heterobilayer MoSe₂/WSe₂.

ε-InSe single crystals grown by a horizontal gradient freeze method

Indium selenide (InSe) single crystals have been considered as promising candidates for future optical, electrical, and optoelectronic device applications.

Halide Perovskites for Nonlinear Optics

Halide perovskites provide an ideal platform for engineering highly promising semiconductor materials for a wide range of applications in optoelectronic devices, such as photovoltaics, light-emitting diodes, photodetectors, and lasers. More recently, increasing research efforts have been directed toward the nonlinear optical properties of halide perovskites because of their unique chemical and electronic properties, which are of crucial importance for advancing their applications in next-generation photonic devices. Here, the current state of the art in the field of nonlinear optics (NLO) in halide perovskite materials is reviewed. Halide perovskites are categorized into hybrid organic/inorganic and pure inorganic ones, and their second-, third-, and higher-order NLO properties are summarized. The performance of halide perovskite materials in NLO devices such as upconversion lasers and ultrafast laser modulators is analyzed. Several potential perspectives and research directions of these promising materials for nonlinear optics are presented.

Efficient training and design of photonic neural network through neuroevolution

Recently, optical neural networks (ONNs) integrated into photonic chips have received extensive attention because they are expected to implement the same pattern recognition tasks in electronic platforms with high efficiency and low power consumption. However, there are no efficient learning algorithms for the training of ONNs on an on-chip integration system. In this article, we propose a novel learning strategy based on neuroevolution to design and train ONNs. Two typical neuroevolution algorithms are used to determine the hyper-parameters of ONNs and to optimize the weights (phase shifters) in the connections. To demonstrate the effectiveness of the training algorithms, the trained ONNs are applied in classification tasks for an iris plants dataset, a wine recognition dataset and modulation formats recognition. The calculated results demonstrate that the accuracy and stability of the training algorithms based on neuroevolution are competitive with other traditional learning algorithms. In comparison to previous works, we introduce an efficient training method for ONNs and demonstrate their broad application prospects in pattern recognition, reinforcement learning and so on.

Functionalized Hybridization of 2D Nanomaterials

The discovery of graphene and subsequent verification of its unique properties have aroused great research interest to exploit diversified graphene-analogous 2D nanomaterials with fascinating physicochemical properties. Through either physical or chemical doping, linkage, adsorption, and hybridization with other functional species into or onto them, more novel/improved properties are readily created to extend/expand their functionalities and further achieve great performance. Here, various functionalized hybridizations by using different types of 2D nanomaterials are overviewed systematically with emphasis on their interaction formats (e.g., in-plane or inter plane), synergistic properties, and enhanced applications. As the most intensely investigated 2D materials in the post-graphene era, transition metal dichalcogenide nanosheets are comprehensively investigated through their element doping, physical/chemical functionalization, and nanohybridization. Meanwhile, representative hybrids with more types of nanosheets are also presented to understand their unique surface structures and address the special requirements for better applications. More excitingly, the van der Waals heterostructures of diverse 2D materials are specifically summarized to add more functionality or flexibility into 2D material systems. Finally, the current research status and faced challenges are discussed properly and several perspectives are elaborately given to accelerate the rational fabrication of varied and talented 2D hybrids.

Second-harmonic generation in multilayer hexagonal boron nitride flakes

In this Letter, we report the second-harmonic generation (SHG) from thick hexagonal boron nitride (hBN) flakes with approximately 109-111 layers. The resulting effective second-order susceptibility is similar to previously reported few-layer experiments. This confirms that thick hBN flakes can serve as a platform for nonlinear optics, which is useful because thick flakes are easy to exfoliate while retaining a large size. We also show spatial second-harmonic maps revealing that SHG remains a useful tool for the characterization of the layer structure, even in the case of a large number of layers.

Controlling second-harmonic diffraction by nano-patterning MoS2 monolayers

Monolayers of transition metal dichalcogenides have a strong second-order nonlinear response enabling second-harmonic generation. Here, we control the spatial radiation properties of the generated second harmonic by patterning MoS₂ monolayers using focused ion beam milling. We observe diffraction of the second harmonic into the zero and first diffraction orders via an inscribed one-dimensional grating. Additionally, we included a fork-like singularity into the grating to create a vortex beam in the first diffraction order.

Rapid and Low-Temperature Salt-Templated Production of 2D Metal Oxide/Oxychloride/Hydroxide

2D materials have played an important role in electronics, sensors, optics, electrocatalysis, and energy storage. Many methods for the preparation of 2D materials have been explored. It is crucial to develop a high-yield, rapid, and low-temperature method to synthesize 2D materials. A general, fast (5 min), and low-temperature (≈100 °C) salt (CoCl₂ ·6H₂ O)-templated method is proposed to prepare series of 2D metal oxides/oxychlorides/hydroxides in large scale, such as MoO₃ , SnO₂ , SiO₂ , BiOCl, Sb₄ O₅ Cl₂ , Zn₂ Co₃ (OH)₁₀ 2H₂ O, and ZnCo₂ O₄ . The as-synthesized 2D materials possess an ultrathin feature (2-7 nm) and large aspect ratios. Additionally, these 2D metal oxides/oxychlorides/hydroxides exhibit good electrochemical properties in energy storage (lithium/sodium-ion batteries) and electrocatalysis (hydrogen/oxygen evolution reaction).

Ultrafast Field-Emission Electron Sources Based on Nanomaterials

The search for electron sources with simultaneous optimal spatial and temporal resolution has become an area of intense activity for a wide variety of applications in the emerging fields of lightwave electronics and attosecond science. Most recently, increasing efforts are focused on the investigation of ultrafast field-emission phenomena of nanomaterials, which not only are fascinating from a fundamental scientific point of view, but also are of interest for a range of potential applications. Here, the current state-of-the-art in ultrafast field-emission, particularly sub-optical-cycle field emission, based on various nanostructures (e.g., metallic nanotips, carbon nanotubes) is reviewed. A number of promising nanomaterials and possible future research directions are also established.

Giant Valley Coherence at Room Temperature in 3R WS2 with Broken Inversion Symmetry

Breaking the space-time symmetries in materials can markedly influence their electronic and optical properties. In 3R-stacked transition metal dichalcogenides, the explicitly broken inversion symmetry enables valley-contrasting Berry curvature and quantization of electronic angular momentum, providing an unprecedented platform for valleytronics. Here, we study the valley coherence of 3R WS₂ large single-crystal with thicknesses ranging from monolayer to octalayer at room temperature. Our measurements demonstrate that both A and B excitons possess robust and thickness-independent valley coherence. The valley coherence of direct A (B) excitons can reach 0.742 (0.653) with excitation conditions on resonance with it. Such giant and thickness-independent valley coherence of large single-crystal 3R WS₂ at room temperature would provide a firm foundation for quantum manipulation of the valley degree of freedom and practical application of valleytronics.

Second harmonic generation in Janus MoSSe a monolayer and stacked bulk with vertical asymmetry

A recently synchronized Janus TMD material with broken out-of-plane symmetry offers a vertical dipole to enhance nonlinear optical behavior. Here, by comparing the second harmonic generation properties of MoS₂ and MoSSe monolayers, we investigated the nonzero out-of-plane SHG susceptibilities of a Janus MoSSe 2D material. A three-fold enhancement of out-of-plane SHG susceptibilities exists in three stacked bulks of Janus MoSSe compared to that in the monolayer. A sensitivity to their stack pattern is also found. The broken out-of-plane symmetry, vertical dipole, and intrinsic tunable electronic properties of Janus two-dimensional materials make MoSSe a promising nanomaterial for nonlinear optical devices.

Broadband Nonlinear Optical Response of Single-Crystalline Bismuth Thin Film

Bismuth (Bi), a topological material, where many interesting condensed matter phenomena have been observed, possesses unique physical properties when its thickness is reduced to thin film. Here, we prepared the highly stable, single-crystalline, continuous Bi thin film via the vapor deposition (VD) method and found that the Bi thin film can exhibit broadband, ultrafast nonlinear optical response with low saturable intensity ranging from the near-infrared to mid-infrared spectral range under strong excitation. Moreover, we demonstrated that the Bi thin film was favorable to act as a nonlinear pulse modulator toward a high performance pulsed laser operating in optical communication and mid-infrared wavelengths. The experimental results highlight the prospects of Bi thin film as broadband pulsed modulators and may open new avenues toward advanced Bi-based broadband photonic devices.

Photonic-crystal-based broadband graphene saturable absorber

The enhanced saturable absorption (SA) of a one-dimensional (1D) photonic crystal (PC) made from polymers and graphene composites by spin coating is observed. It shows obvious bandgaps at two wavelengths in transmittance. Femtosecond Z-scan measurement at 515 nm and 1030 nm reveals a distinct enhancement in the effective nonlinear absorption coefficient β_eff for graphene nanoflakes embedded in the PC, when compared with the bulk graphene-polymer composite. The effect is studied in a wide range of laser intensities. Graphene inclusion into a 1D PC remarkably decreases the SA threshold and saturation intensity, providing a desired solution for an advanced all-optical laser mode-locking device.

Third-harmonic generation in multilayer Tin Diselenide under the influence of Fabry-Perot interference effects

Two-dimensional layered materials are in general known to exhibit strong layer dependent nonlinear optical response owing to the crystal symmetry and associated phase matching considerations. Here we report up-conversion of 1550 nm incident light using third-harmonic generation (THG) in multilayered tin di-selenide (SnSe₂) and study its thickness dependence by simultaneously acquiring spatially-resolved images in the forward and backward propagation direction. We find good agreement between the experimental measurements and a coupled-wave equation model we have developed when including the effect of Fabry-Perot interference between the SnSe₂ layer and the surrounding medium. We extract the magnitude of the third order electronic nonlinear optical susceptibility of SnSe₂, for the first time to our knowledge, by comparing its nonlinear response with a glass substrate and find this to be ∼1500 times higher than that of glass. We also study the polarization dependence and find good agreement with the expected angular dependence of nonlinear polarization considering the crystal symmetry of SnSe₂. The large nonlinear optical susceptibility of multi-layer SnSe₂ makes it a promising material for studying nonlinear optical effects. This work demonstrates that in addition to the large inherent nonlinear optical susceptibility, the high refractive index of these materials and optical absorption above the bandgap strongly influence the overall nonlinear optical response and its thickness dependence characteristics.

Atomically Thin Nonlinear Transition Metal Dichalcogenide Holograms

Nonlinear holography enables optical beam generation and holographic image reconstruction at new frequencies other than the excitation fundamental frequency, providing pathways toward unprecedented applications in optical information processing and data security. So far, plasmonic metasurfaces with the thickness of tens of nanometers have been mostly adopted for realizing nonlinear holograms with the potential of on-chip integration but suffering from low conversion efficiency and high absorption loss. Here, we report a nonlinear transition metal dichalcogenide (TMD) hologram with high conversion efficiency and atomic thickness made of only single nanopatterned tungsten disulfide (WS₂) monolayer, for producing optical vortex beams and Airy beams as well as reconstructing complex holographic images at the second harmonic (SH) frequency. Our concept of nonlinear TMD holograms paves the way toward not only the understanding of light-matter interactions at the atomic level but the integration of functional TMD-based devices with atomic thickness into the next-generation photonic circuits for optical communication, high-density optical data storage, and information security.

A polarized nonlinear optical response in a topological insulator Bi2Se3-Au nanoantenna hybrid-structure for all-optical switching

Nonlinear plasmons are becoming an appealing and intriguing research area due to their remarkable light concentration and manipulation abilities. In this work, the nonlinear absorption (NLA) phenomena of polarized nanoantenna arrays coupled with the low dimensional topological insulator Bi2Se3 are studied at different excitation wavelengths. Our experimental results indicate that a significant enhancement in the linear absorption coefficient is achieved by localized surface plasmon (LSP) resonance, with enhancement factors that are 10- and 8-fold in magnitude for the cases of 800 nm (y polarization) and 970 nm (x polarization), respectively. Moreover, by polarization sensitive studies under 800 nm laser excitation, this new Bi2Se3-Au nanoantenna hybrid-structure exhibits adverse absorption responses of enhancement and suppression compared to pure Bi2Se3 film, providing excellent potential for applications in information converters. In particular, under 800 nm pump light (10 GW cm-2), the transmittance intensity of 450 nm or 1064 nm continuous wave (CW) probe light alters back and forth when the polarization direction changes by 90°. Thus, "ON" and "OFF" modes of this Bi2Se3-Au nanoantenna hybrid structure-based switch are achieved by using 450 nm and 1064 nm light, respectively, with a corresponding modulation depth of 3.4% and 21.9%, which can be applied in versatile photonic devices.

Interlayer excitons in bilayer MoS2 under uniaxial tensile strain

Atomically thin semiconducting transition metal dichalcogenides (TMDCs) have unique mechanical and optical properties. They are extremely flexible and exhibit a strong optical absorption at their excitonic resonances. Excitons in TMDC monolayers are strongly influenced by mechanical strain. Their energy shifts and even their line widths change. In bilayers, intralayer excitons with electrons and holes residing in the same layer also shift their energy with the applied strain. Recently, interlayer excitons with electrons and holes in different layers have been observed in bilayer MoS₂ at room temperature. Here, we report on the behavior of interlayer excitons in bilayer MoS₂ under uniaxial tensile strain of up to 1.6%. By recording the differential transmission spectra for different strain values, we derive a gauge factor of -47 meV per % for the energy shift of the interlayer exciton, which is similar to -49 meV per % for the intralayer A and B excitons. Our finding confirms the origin of the interlayer exciton at the K point in the Brillouin zone, with the electron located in one layer and the hole delocalized over two layers. Furthermore, our work paves the way for future straintronic devices based on interlayer excitons.

Dissolved Oxygen and Visible Light Irradiation Drive the Structural Alterations and Phytotoxicity Mitigation of Single-Layer Molybdenum Disulfide

Understanding environmental fate is a prerequisite for the safe application of nanoparticles. However, the fundamental persistence and environmental transformation of single-layer molybdenum disulfide (SLMoS₂, a 2D nanosheet attracting substantial attention in various fields) remain largely unknown. The present work found that the dissolution of SLMoS₂ was pH and dissolved oxygen dependent and that alterations in phase composition significantly occur under visible light irradiation. The 1T phase was preferentially oxidized to yield soluble species (MoO₄^2- and SO₄^2-), and the 2H phase remained as a residual. The transformed SLMoS₂ exhibited a ribbon-like and multilayered structure and low colloidal stability due to the loss of surface charge. Dissolved oxygen competitively captured the electrons of SLMoS₂ to generate superoxide radicals and accelerated the dissolution of nanosheets. Compared to pristine 1T-phase SLMoS₂, the transformed 2H-phase SLMoS₂ could not easily enter algal cells and induced a low developmental inhibition, oxidative stress, plasmolysis, photosynthetic toxicity and metabolic perturbation. The downregulation of amino acids and upregulation of unsaturated fatty acids contributed to the higher toxicity of 1T-phase SLMoS₂. The dissolved ions did not induce apparent phytotoxicity. The connections between environmental transformation (phase change and ion release) and phytotoxicity provide insights into the safe design and evaluation of 2D nanomaterials.

Tunable Modal Birefringence in a Low-Loss Van Der Waals Waveguide

van der Waals (vdW) crystals are promising candidates for integrated phase retardation applications due to their large optical birefringence. Among the two major types of vdW materials, the hyperbolic vdW crystals are inherently inadequate for optical retardation applications since the supported polaritonic modes are exclusively transverse-magnetic (TM) polarized and relatively lossy. Elliptic vdW crystals, on the other hand, represent a superior choice. For example, molybdenum disulfide (MoS₂ ) is a natural uniaxial vdW crystal with extreme elliptic anisotropy in the frequency range of optical communication. Both transverse-electric (TE) polarized ordinary and TM polarized extraordinary waveguide modes can be supported in MoS₂ microcrystals with suitable thicknesses. In this work, low-loss transmission of these guided modes is demonstrated with nano-optical imaging at the near-infrared (NIR) wavelength (1530 nm). More importantly, by combining theoretical calculations and NIR nanoimaging, the modal birefringence between the orthogonally polarized TE and TM modes is shown to be tunable in both sign and magnitude via varying the thickness of the MoS₂ microcrystal. This tunability represents a unique new opportunity to control the polarization behavior of photons with vdW materials.

Nonlayered Two-Dimensional Defective Semiconductor γ-Ga2S3 toward Broadband Photodetection

Two-dimensional (2D) materials exhibit high sensitivity to structural defects due to the nature of interface-type materials, and the corresponding structural defects can effectively modulate their inherent properties in turn, giving them a wide application range in high-performance and functional devices. 2D γ-Ga₂S₃ is a defective semiconductor with outstanding optoelectronic properties. However, its controllable preparation has not been implemented yet, which hinders exploring its potential applications. In this work, we introduce nonlayered γ-Ga₂S₃ into the 2D materials family, which was successfully synthesized via the space-confined chemical vapor deposition method. Its intriguing defective structure are revealed by high-resolution transmission electron microscopy and temperature-dependent cathodoluminescence spectra, which endow the γ-Ga₂S₃-based device with a broad photoresponse from the ultraviolet to near-infrared region and excellent photoelectric conversion capability. Simultaneously, the device also exhibits excellent ultraviolet detection ability ( R_λ = 61.3 A W^-1, I_on /I_off = 851, EQE = 2.17× 10⁴ %, D* = 1.52× 10¹⁰ Jones @350 nm), and relatively fast response (15 ms). This work provides a feasible way to fabricate ultrathin nonlayered materials and explore the potential applications of a 2D defective semiconductor in high-performance broadband photodetection, which also suggests a promising future of defect creation in optimizing photoelectric properties.

Second-harmonic optical vortex conversion from WS2 monolayer

Wavelength, polarization and orbital angular momentum of light are important degrees of freedom for processing and encoding information in optical communication. Over the years, the generation and conversion of orbital angular momentum in nonlinear optical media has found many novel applications in the context of optical communication and quantum information processing. With that hindsight, here orbital angular momentum conversion of optical vortices through second-harmonic generation from only one atomically thin WS₂ monolayer is demonstrated at room temperature. Moreover, it is shown that the valley-contrasting physics associated with the nonlinear optical selection rule in WS₂ monolayer precisely determines the output circular polarization state of the generated second-harmonic vortex. These results pave the way for building future miniaturized valleytronic devices with atomic-scale thickness for many applications such as chiral photon emission, nonlinear beam generation, optoelectronics, and quantum computing.

Be2CO3F2 Monolayer: A Flexible Ultraviolet Nonlinear Optical Material via Rational Design

Multifunctional monolayer materials with attractive properties and novel applications are of present research interest. In this contribution, we design a new monolayer Be₂CO₃F₂ (BCF) by taking a KBe₂BO₃F₂ unique crystal that is able to produce a high energetic laser by a direct second harmonic generation method, as a parent. The cohesive energy, positive phonon modes, and elastic constants reveal that the BCF monolayer is dynamically and mechanically stable, and the appropriate cleavage energy predicts the experimental realization possibility. The property investigations demonstrated that the monolayer BCF has the significantly superiority in flexibility over the representative flexible optoelectronic material MoS₂ based on the calculation of Young's modulus. Additionally, the monolayer BCF possesses both a large band gap (5.2 eV) and a second harmonic generation response. These results demonstrate that the monolayer BCF may provide better applications as a promising multifunctional material in the flexible nonlinear optical fields. We hope that this research will pave a new way for designing new generation multifunctional devices.

Anisotropic Enhancement of Second-Harmonic Generation in Monolayer and Bilayer MoS2 by Integrating with TiO2 Nanowires

The ability to design and enhance the nonlinear optical responses in two-dimensional (2D) transition-metal dichalcogenides (TMDCs) is both of fundamental interest and highly desirable for developing TMDC-based nonlinear optical applications, such as nonlinear convertors and optical modulators. Here, we report for the first time a strong anisotropic enhancement of optical second-harmonic generation (SHG) in monolayer molybdenum disulfide (MoS₂) by integrating with one-dimensional (1D) titanium dioxide nanowires (NWs). The SHG signal from the MoS₂/NW hybrid structures is over 2 orders of magnitude stronger than that in the bare monolayer MoS₂. Polarized SHG measurements revealed a giant anisotropy in SHG response of the MoS₂/NW hybrid. The pattern of the anisotropic SHG depends highly on the stacking angle between the nanowire direction and the MoS₂ crystal orientation, which is attributed to the 1D NW-induced directional strain fields in the layered MoS₂. A similar effect has also been observed in bilayer MoS₂/NW hybrid structure, further proving the proposed scenario. This work provides an effective approach to selectively and directionally designing the nonlinear optical response of layered TMDCs, paving the way for developing high-performance, anisotropic nonlinear photonic nanodevices.

Nonlinear Optical Response in Graphene/WX2 (X = S, Se, and Te) van der Waals Heterostructures

Light-frequency conversion based on two-dimensional (2D) materials is of great importance for modern nano- and integrated photonics. Herein, we report both the intrinsic (from the pure WX₂ (X = S, Se, and Te)) and extrinsic (from the interface of graphene/WX₂) second-order nonlinear coefficient tensor from graphene/WX₂ van der Waals (vdW) heterostructures by first-principles calculations. The prominent peaks in the dispersion relation of the intrinsic second-order nonlinear coefficient in monolayer WX₂ are due to the Van Hove singularity in the high-symmetry point or along the high-symmetry line with high joint density of states. The enhanced nonlinear optical response in the infrared band can be achieved in graphene/WS₂ vdW heterostructures, resulting from the interlayer charge transfer between graphene and WS₂. The value of the intrinsic second-order nonlinear coefficients of graphene/WSe₂ vdW heterostructures is 1.5 times larger than that of pure monolayer WSe₂ at the band gap energy of monolayer WSe₂ because of the enhanced carrier generation after the heterostructure formation. Different from pure monolayer WX₂, azimuthal angle-dependent second harmonic generation from graphene/WX₂ vdW heterostructures exhibits extraordinary rotational symmetry at different photon energies, which can be used to deduce the extrinsic second-order nonlinear coefficient. These results pave the way for the nonlinear optical coefficient design based on 2D heterostructures for nonlinear nanophotonics and integrated devices.

Universal Imaging of Full Strain Tensor in 2D Crystals with Third-Harmonic Generation

Quantitatively mapping and monitoring the strain distribution in 2D materials is essential for their physical understanding and function engineering. Optical characterization methods are always appealing due to unique noninvasion and high-throughput advantages. However, all currently available optical spectroscopic techniques have application limitation, e.g., photoluminescence spectroscopy is for direct-bandgap semiconducting materials, Raman spectroscopy is for ones with Raman-active and strain-sensitive phonon modes, and second-harmonic generation spectroscopy is only for noncentrosymmetric ones. Here, a universal methodology to measure the full strain tensor in any 2D crystalline material by polarization-dependent third-harmonic generation is reported. This technique utilizes the third-order nonlinear optical response being a universal property in 2D crystals and the nonlinear susceptibility has a one-to-one correspondence to strain tensor via a photoelastic tensor. The photoelastic tensor of both a noncentrosymmetric D_3h WS₂ monolayer and a centrosymmetric D_3d WS₂ bilayer is successfully determined, and the strain tensor distribution in homogenously strained and randomly strained monolayer WS₂ is further mapped. In addition, an atlas of photoelastic tensors to monitor the strain distribution in 2D materials belonging to all 32 crystallographic point groups is provided. This universal characterization on strain tensor should facilitate new functionality designs and accelerate device applications in 2D-materials-based electronic, optoelectronic, and photovoltaic devices.

Strong Single- and Two-Photon Luminescence Enhancement by Nonradiative Energy Transfer across Layered Heterostructure

The strong light-matter interaction in monolayer transition metal dichalcogenides (TMDs) is promising for nanoscale optoelectronics with their direct band gap nature and the ultrafast radiative decay of the strongly bound excitons these materials host. However, the impeded amount of light absorption imposed by the ultrathin nature of the monolayers impairs their viability in photonic applications. Using a layered heterostructure of a monolayer TMD stacked on top of strongly absorbing, nonluminescent, multilayer SnSe₂, we show that both single-photon and two-photon luminescence from the TMD monolayer can be enhanced by a factor of 14 and 7.5, respectively. This is enabled through interlayer dipole-dipole coupling induced nonradiative Förster resonance energy transfer (FRET) from SnSe₂ underneath, which acts as a scavenger of the light unabsorbed by the monolayer TMD. The design strategy exploits the near-resonance between the direct energy gap of SnSe₂ and the excitonic gap of monolayer TMD, the smallest possible separation between donor and acceptor facilitated by van der Waals heterojunction, and the in-plane orientation of dipoles in these layered materials. The FRET-driven uniform single- and two-photon luminescence enhancement over the entire junction area is advantageous over the local enhancement in quantum dot or plasmonic structure integrated 2D layers and is promising for improving quantum efficiency in imaging, optoelectronic, and photonic applications.

Phase Identification and Strong Second Harmonic Generation in Pure ε-InSe and Its Alloys

Two-dimensional material indium selenide (InSe) has offered a new platform for fundamental research in virtue of its emerging fascinating properties. Unlike 2H-phase transition-metal dichalcogenides (TMDs), ε phase InSe with a hexagonal unit cell possesses broken inversion symmetry in all the layer numbers, and predicted to have a strong second harmonic generation (SHG) effect. In this work, we find that the as-prepared pure InSe, alloyed InSe_{1- x}Te _x and InSe_{1- x}S _x ( x = 0.1 and 0.2) are ε phase structures and exhibit excellent SHG performance from few-layer to bulk-like dimension. This high SHG efficiency is attributed to the noncentrosymmetric crystal structure of the ε-InSe system, which has been clearly verified by aberration-corrected scanning transmission electron microscopy (STEM) images. The experimental results show that the SHG intensities from multilayer pure ε-InSe and alloyed InSe_0.9Te_0.1 and InSe_{1- x}S _x ( x = 0.1 and 0.2) are around 1-2 orders of magnitude higher than that of the monolayer TMD systems and even superior to that of GaSe with the same thickness. The estimated nonlinear susceptibility χ⁽²⁾ of ε-InSe is larger than that of ε-GaSe and monolayer TMDs. Our study provides first-hand information about the phase identification of ε-InSe and indicates an excellent candidate for nonlinear optical (NLO) applications as well as the possibility of engineering SHG response by alloying.

8.8 GHz Q-switched mode-locked waveguide lasers modulated by PtSe2 saturable absorber

We demonstrate high-repetition-rate fundamentally Q-switched mode-locked Nd:YAG waveguide laser modulated by platinum diselenide (PtSe₂) saturable absorber. The laser operation platform is a femtosecond laser-written monolithic Nd:YAG waveguide, and the saturable absorber is large-area few-layer PtSe₂ that possesses relatively lower saturation intensity and higher modulation depth in comparison with graphene. With the superb ultrafast nonlinear saturable absorption properties of as-synthesized PtSe₂, the waveguide laser could operate at ~8.8 GHz repetition rate and ~27 ps pulse duration, while maintaining a relatively high slope efficiency of 26% and high stability with signal-to-noise ratio (SNR) up to 54 dB. Our work indicates the promising applications of laser-written Nd:YAG waveguides and atomically thin PtSe₂ for on-chip integration of GHz laser sources toward higher repetition rates and shorter pulse duration.

Gas identification with graphene plasmons

Identification of gas molecules plays a key role a wide range of applications extending from healthcare to security. However, the most widely used gas nano-sensors are based on electrical approaches or refractive index sensing, which typically are unable to identify molecular species. Here, we report label-free identification of gas molecules SO₂, NO₂, N₂O, and NO by detecting their rotational-vibrational modes using graphene plasmon. The detected signal corresponds to a gas molecule layer adsorbed on the graphene surface with a concentration of 800 zeptomole per μm², which is made possible by the strong field confinement of graphene plasmons and high physisorption of gas molecules on the graphene nanoribbons. We further demonstrate a fast response time (<1 min) of our devices, which enables real-time monitoring of gaseous chemical reactions. The demonstration and understanding of gas molecule identification using graphene plasmonic nanostructures open the door to various emerging applications, including in-breath diagnostics and monitoring of volatile organic compounds.

High photoresponsivity and broadband photodetection with a band-engineered WSe2/SnSe2 heterostructure

van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe2/SnSe2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W-1 and 4.4 × 1010 Jones and those at 1550 nm are ∼80 A W-1 and 1.4 × 1010 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.

Polarization dependent plasmonic modes in elliptical graphene disk arrays

Plasmonic modes at mid-infrared wavelengths in elliptical graphene disk arrays were studied. Theoretically, analytical expressions for the modes and their dependence on the size, Fermi energy and the permittivity of substrate materials of the ellipses were derived. Experimentally, the elliptical graphene disks were fabricated and their plasmonic modes were characterized with the polarization-resolved extinction spectra. Both experimental and analytical results show that two electrical dipole modes, whose dipole moments are orthogonal to each other and along the major and minor axis of the ellipse respectively, exist in the elliptical disks. By adjusting the polarization directions of the incident light, the two orthogonal plasmonic modes could be excited either together or separately, showing that the optical properties of elliptical graphene disks are highly polarization dependent. By using ultraviolet illumination to change the Fermi energy of the elliptical graphene disks, the two modes can be tuned dynamically. Moreover, the highly polarization dependent modes are able to couple with the surface phonons of the substrate, leading to polarized plasmon-phonon polaritons. Thus the elliptical graphene disks can provide more degrees of freedom to design the mid-infrared polarization-resolved photonic devices.

Broadly Tunable Plasmons in Doped Oxide Nanoparticles for Ultrafast and Broadband Mid-Infrared All-Optical Switching

Plasmons in conducting nanostructures offer the means to efficiently manipulate light at the nanoscale with subpicosecond speed in an all-optical operation fashion, thus allowing for construction of high performance all-optical signal-processing devices. Here, by exploiting the ultrafast nonlinear optical properties of broadly tunable mid-infrared (MIR) plasmons in solution-processed, degenerately doped oxide nanoparticles, we demonstrate ultrafast all-optical switching in the MIR region, which features subpicosecond response speed (with recovery time constant of <400 fs) as well as an ultrabroadband response spectral range (covering 3.0-5.0 μm). Furthermore, with the degenerately doped nanoparticles as Q-switch, pulsed fiber lasers covering 2.0-3.5 μm were constructed, of which a watt-level fiber laser at 3.0 μm band shows superior overall performance among previously reported passively Q-switched fiber lasers at the same band. Notably, the degenerately doped nanoparticles show great potential to work in the spectral range over 3.0 μm, which is beyond the accessibility of commercially available but expensive semiconducting saturable absorber mirror (SESAM). Our work demonstrates a versatile while cost-effective material solution to ultrafast photonics in the technologically important MIR region.

Two-photon absorption and non-resonant electronic nonlinearities of layered semiconductor TlGaS2

The ultrafast nonlinear optical properties of bulk TlGaS₂ crystal, a semiconductor with a layered structure, are studied by combining intensity dependent transmission, time-resolved transient absorption, and optical Kerr effect coupled to optical heterodyne detection. TlGaS₂ demonstrates obvious two-photon absorption and electronic nonlinearities at 800 nm. The two-photon absorption coefficient and the nonlinear refractive index are determined to be of the order of 10^-10 cm/W and 10^-14 cm²/W, respectively. Furthermore, both the real and imaginary parts of the complex third-order susceptibility tensor elements are extracted. The large ultrafast optical nonlinearities make TlGaS₂ a promising material for application in photonic techniques.

Tailoring the nonlinear optical performance of two-dimensional MoS2 nanofilms via defect engineering

Defect engineering plays a key role in determining the catalytic and optical properties of two-dimensional (2D) materials such as molybdenum disulfide (MoS2) in their practical applications in optical and photonic devices. Here, we report a direct strategy for the fabrication of wafer-scale 2D MoS2 nanofilms with tunable sulfur (S) vacancies and crystallinity by a modified solvothermal method via a polyelectrolyte-assisted annealing process. Our results demonstrate that the S vacancies in MoS2 nanofilms can induce saturable absorption (SA) in MoS2 by introducing new energy bands within the band gap of MoS2, and the crystallinity has a significant effect on the two-photon absorption (TPA) coefficient of MoS2 nanofilms. The SA responses in MoS2 will gradually dominate the nonlinear optical (NLO) behavior of MoS2 with a lower saturable intensity along with increasing the S vacancies. The TPA coefficient of the MoS2 nanofilms with increased crystallinity is improved to (4.3 ± 0.5) × 102 cm GW-1 on increasing the crystallinity of MoS2 films, over four times larger than that of their counterpart with relatively low crystallinity. Additionally, the damage threshold of MoS2 nanofilms after polyelectrolyte-assisted annealing treatment is greatly improved to ∼74.1 GW cm-2 compared to ∼32.6 GW cm-2 of their counterpart with few S vacancies and relatively low crystallinity, due to the increased crystallinity and partial oxidation of MoS2. This work sheds light on how the defects tailor the nonlinear optical properties of 2D MoS2 nanofilms and affords an effective strategy for defect engineering via a polyelectrolyte-assisted annealing process, which can be applied to other 2D transition metal dichalcogenides.

Active synchronization and modulation of fiber lasers with a graphene electro-optic modulator

We report the synchronization of two actively Q-switched fiber lasers operating at 1.5 μm and 2 μm with a shared broadband graphene electro-optic modulator. Two graphene monolayer sheets separated with a high-kHfO₂ dielectric layer are configured to enable broadband light modulation. The graphene electro-optic modulator is shared by two optical fiber laser cavities (i.e., an erbium-doped fiber laser cavity and a thulium/holmium-codoped fiber laser cavity) to actively Q-switch the two lasers, resulting in stable synchronized pulses at 1.5 μm and 2 μm with a repetition rate ranging from 46 kHz to 56 kHz.

Characterization of the second- and third-harmonic optical susceptibilities of atomically thin tungsten diselenide

We report the first detailed characterization of the sheet third-harmonic optical susceptibility, χ⁽³⁾_s, of tungsten diselenide (WSe₂). With a home-built multiphoton microscope setup developed to study harmonics generation, we map the second and third-harmonic intensities as a function of position in the sample, pump power and polarization angle, for single- and few-layers flakes of WSe₂. We register a value of |χ⁽³⁾_s| ≈ 0.9 × 10^-28 m³ V^-2 at a fundamental excitation frequency of ℏω = 0.8 eV, which is comparable in magnitude to the third-harmonic susceptibility of other group-VI transition metal dichalcogenides. The simultaneously recorded sheet second-harmonic susceptibility is found to be |χ⁽²⁾_s| ≈ 0.7 × 10^-19 m² V^-1 in very good agreement on the order of magnitude with recent reports for WSe₂, which asserts the robustness of our values for |χ⁽³⁾_s|.

Wavelength and pulse duration tunable ultrafast fiber laser mode-locked with carbon nanotubes

Ultrafast lasers with tunable parameters in wavelength and time domains are the choice of light source for various applications such as spectroscopy and communication. Here, we report a wavelength and pulse-duration tunable mode-locked Erbium doped fiber laser with single wall carbon nanotube-based saturable absorber. An intra-cavity tunable filter is employed to continuously tune the output wavelength for 34 nm (from 1525 nm to 1559 nm) and pulse duration from 545 fs to 6.1 ps, respectively. Our results provide a novel light source for various applications requiring variable wavelength or pulse duration.