Transport properties of pristine few-layer black phosphorus by van der Waals passivation in an inert atmosphere

Recent progress in 2D group-VA semiconductors: from theory to experiment

This review provides recent theoretical and experimental progress in the fundamental properties, electronic modulations, fabrications and applications of 2D group-VA materials.

Black phosphorus with near-superhydrophobic properties and long-term stability in aqueous media

We present the use of a polymeric stabilizer which stymies the degradation of black phosphorus nanosheets in aqueous media as well as imparting superhydrophobic properties to immobilised nanosheets.

Organosilicon modification to enhance the stability of black phosphorus nanosheets under ambient conditions

An organosilicon agent, TMSCl, was used for the surface coordination of bare BP nanosheets to generate the more stable TMSCl@BP.

Black Phosphorus and its Biomedical Applications

Black phosphorus (BP), also known as phosphorene, has attracted recent scientific attention since its first successful exfoliation in 2014 owing to its unique structure and properties. In particular, its exceptional attributes, such as the excellent optical and mechanical properties, electrical conductivity and electron-transfer capacity, contribute to its increasing demand as an alternative to graphene-based materials in biomedical applications. Although the outlook of this material seems promising, its practical applications are still highly challenging. In this review article, we discuss the unique properties of BP, which make it a potential platform for biomedical applications compared to other 2D materials, including graphene, molybdenum disulphide (MoS2), tungsten diselenide (WSe2) and hexagonal boron nitride (h-BN). We then introduce various synthesis methods of BP and review its latest progress in biomedical applications, such as biosensing, drug delivery, photoacoustic imaging and cancer therapies (i.e., photothermal and photodynamic therapies). Lastly, the existing challenges and future perspective of BP in biomedical applications are briefly discussed.

Enhancing the ambient stability of few-layer black phosphorus by surface modification

Based on high-throughput density functional theory calculations, we investigated the adsorption characteristics of various elements across the Periodic Table on few-layer black phosphorus (BP). Using the criterion that the ratio of adsorption energy (E_ads) to bulk cohesive energy (E_coh) is greater than one (E_ads/E_coh > 1), we selected fifteen elements. The adsorption of these elements on few-layer BPs could significantly shift their conduction-band minimum (CBM) downward, suggesting the possibility of preventing the few-layer BPs from oxidation if the CBM can be shifted below the O₂/O₂⁻ redox potential. Our study offers an efficient approach to overcoming the technical barrier in the practical application of few-layer BPs by enhancing its ambient stability via surface modification.

To enhance the ambient stability of black phosphorus, fifteen elements have been selected to investigate their effects on the conduction band minimum of bP.

Growth of Black Phosphorus Nanobelts and Microbelts

Black phosphorus nanobelts are fabricated with a one-step solid-liquid-solid reaction method under ambient pressure, where red phosphorus is used as the precursor instead of white phosphorus. The thickness of the as-fabricated nanobelts ranges from micrometers to tens of nanometers as studied by scanning electron microscopy. Energy dispersive X-ray spectroscopy and X-ray diffraction indicate that the nanobelts have the composition and the structure of black phosphorus, transmission electron microscopy reveals a typical layered structure stacked along the b-axis, and scanning transmission electron microscopy with energy dispersive X-ray spectroscopy analysis demonstrates the doping of bismuth into the black phosphorus structure. The nanobelt can be directly measured in scanning tunneling microscopy in ambient conditions.

Fluorinated Phosphorene: Electrochemical Synthesis, Atomistic Fluorination, and Enhanced Stability

Phosphorene has attracted great interest due to its unique electronic and optoelectronic properties owing to its tunable direct and moderate band-gap in association with high carrier mobility. However, its intrinsic instability in air seriously hinders its practical applications, and problems of technical complexity and in-process degradation exist in currently proposed stabilization strategies. A facile pathway in obtaining and stabilizing phosphorene through a one-step, ionic liquid-assisted electrochemical exfoliation and synchronous fluorination process is reported in this study. This strategy enables fluorinated phosphorene (FP) to be discovered and large-scale, highly selective few-layer FP (3-6 atomic layers) to be obtained. The synthesized FP is found to exhibit unique morphological and optical characteristics. Possible atomistic fluorination configurations of FP are revealed by core-level binding energy shift calculations in combination with spectroscopic measurements, and the results indicate that electrolyte concentration significantly modulates the fluorination configurations. Furthermore, FP is found to exhibit enhanced air stability thanks to the antioxidation and antihydration effects of the introduced fluorine adatoms, and demonstrate excellent photothermal stability during a week of air exposure. These findings pave the way toward real applications of phosphorene-based nanophotonics.

Identification of Lattice Oxygen in Few-Layer Black Phosphorous Exfoliated in Ultrahigh Vacuum and Largely Improved Ambipolar Field-Effect Mobilities by Hydrogenation and Phosphorization

Black phosphorus (BP) has recently attracted considerable attention due to its unique structure and fascinating optical and electronic properties as well as possible applications in photothermal agents. However, its main drawback is rapid degradation in ambient environments of H₂O and O₂, which has led to much research on the improvement of its stability. Unfortunately, this research has not shown great improvement in carrier mobilities. Here, we perform scanning tunneling microscopy observations of few-layer BP (FLBP) sheets exfoliated in ultrahigh vacuum and reveal, for the first time, the existence of lattice oxygen introduced during crystal growth. As a proof-of-concept application, hydrogenation is conducted to remove the lattice oxygen atoms followed by phosphorization, which repairs the phosphorous vacancies caused by mechanical exfoliation and hydrogenation. The resulting FLBP sheets show high ambipolar field-effect mobilities of 1374 cm² V^-1 s^-1 for holes and 607 cm² V^-1 s^-1 for electrons at 2 K. After storage in air for 3 days, the hole and electron mobilities only decrease to 1181 and 518 cm² V^-1 s^-1, respectively, and no structural degradation is observed. This work suggests an effective means to improve both the mobility and stability of BP sheets rendering practical application of FLBP sheets possible.

Improved Biocompatibility of Black Phosphorus Nanosheets by Chemical Modification

Black phosphorus nanosheets (BPs) show great potential for various applications including biomedicine, thus their potential side effects and corresponding improvement strategy deserve investigation. Here, in vitro and in vivo biological effects of BPs with and without titanium sulfonate ligand (TiL4 ) modification are investigated. Compared to bare BPs, BPs with TiL4 modification (TiL4 @BPs) can efficiently escape from macrophages uptake, and reduce cytotoxicity and proinflammation. The corresponding mechanisms are also discussed. These findings may not only guide the applications of BPs, but also propose an efficient strategy to further improve the biocompatibility of BPs.

Resolving the Spatial Structures of Bound Hole States in Black Phosphorus

Understanding the local electronic properties of individual defects and dopants in black phosphorus (BP) is of great importance for both fundamental research and technological applications. Here, we employ low-temperature scanning tunnelling microscope (LT-STM) to probe the local electronic structures of single acceptors in BP. We demonstrate that the charge state of individual acceptors can be reversibly switched by controlling the tip-induced band bending. In addition, acceptor-related resonance features in the tunnelling spectra can be attributed to the formation of Rydberg-like bound hole states. The spatial mapping of the quantum bound states shows two distinct shapes evolving from an extended ellipse shape for the 1s ground state to a dumbbell shape for the 2p_x excited state. The wave functions of bound hole states can be well-described using the hydrogen-like model with anisotropic effective mass, corroborated by our theoretical calculations. Our findings not only provide new insight into the many-body interactions around single dopants in this anisotropic two-dimensional material but also pave the way to the design of novel quantum devices.

Metal-Ion-Modified Black Phosphorus with Enhanced Stability and Transistor Performance

Black phosphorus (BP), a burgeoning elemental 2D semiconductor, has aroused increasing scientific and technological interest, especially as a channel material in field-effect transistors (FETs). However, the intrinsic instability of BP causes practical concern and the transistor performance must also be improved. Here, the use of metal-ion modification to enhance both the stability and transistor performance of BP sheets is described. Ag⁺ spontaneously adsorbed on the BP surface via cation-π interactions passivates the lone-pair electrons of P thereby rendering BP more stable in air. Consequently, the Ag⁺ -modified BP FET shows greatly enhanced hole mobility from 796 to 1666 cm² V^-1 s^-1 and ON/OFF ratio from 5.9 × 10⁴ to 2.6 × 10⁶ . The mechanisms pertaining to the enhanced stability and transistor performance are discussed and the strategy can be extended to other metal ions such as Fe³⁺ , Mg²⁺ , and Hg²⁺ . Such stable and high-performance BP transistors are crucial to electronic and optoelectronic devices. The stability and semiconducting properties of BP sheets can be enhanced tremendously by this novel strategy.

Highly Efficient and Air-Stable Infrared Photodetector Based on 2D Layered Graphene-Black Phosphorus Heterostructure

The presence of a direct band gap and high carrier mobility in few-layer black phosphorus (BP) offers opportunities for using this material for infrared (IR) light detection. However, the poor air stability of BP and its large contact resistance with metals pose significant challenges to the fabrication of highly efficient IR photodetectors with long lifetimes. In this work, we demonstrate a graphene-BP heterostructure photodetector with ultrahigh responsivity and long-term stability at IR wavelengths. In our device architecture, the top layer of graphene functions not only as an encapsulation layer but also as a highly efficient transport layer. Under illumination, photoexcited electron-hole pairs generated in BP are separated and injected into graphene, significantly reducing the Schottky barrier between BP and the metal electrodes and leading to efficient photocurrent extraction. The graphene-BP heterostructure phototransistor exhibits a long-term photoresponse at near-infrared wavelength (1550 nm) with an ultrahigh photoresponsivity (up to 3.3 × 10³ A W^-1), a photoconductive gain (up to 1.13 × 10⁹), and a rise time of about 4 ms. Considering the thickness-dependent band gap in BP, this material represents a powerful photodetection platform that is able to sustain high performance in the IR wavelength regime with potential applications in remote sensing, biological imaging, and environmental monitoring.

Current progress in black phosphorus materials and their applications in electrochemical energy storage

Recently, a new two-dimensional material, single- or few-layered black phosphorus (BP), has attracted considerable attention for applications in electronics, optoelectronics, and batteries due to its unique properties, including large specific surface area, anisotropy, and tunable and direct band gaps. In particular, contributions to electrochemical energy storage devices, such as lithium and sodium ion batteries and supercapacitors, have emerged. However, critical issues remain to be explored before scaled-up commercial production of BP, such as preparation, stability, and performance. Herein, we present the first review of recent progress in BP-based electrochemical energy storage device. The preparation and electrochemical properties of black phosphorus, recent advances, potential challenges, and relevant perspectives in electrochemical energy storage, and the potential of BP are discussed in this work.

Fabrication of an ideal nanoring from a black phosphorus nanoribbon upon movable bundling carbon nanotubes

As a low dimensional material, black phosphorus (BP) continues to attract much attention from researchers due to its excellent electric properties. In particular, the one-dimensional material, in the form of a ring or tube formed from BP, has been extensively studied and found to be a perfect semiconductor. But the BP ring has never been reported in laboratories. To form an ideal ring from a rectangular BP ribbon, we choose a carbon nanotube (CNT) bundle to attract the ribbon and move one or more CNTs in the bundle to induce the unsaturated ends of the BP ribbon to become covalently bonded. Numerical experiments are applied to BP ribbons with lengths either equal to, shorter, or longer than the perimeter of the CNT bundle, to investigate the formation of a BP ring. Experiments show that if one end of the BP ribbon is attracted by a CNT, moving the other CNTs away endows the ribbon with high probability of forming an ideal ring. The conclusions drawn from these results will benefit future in situ experiments involving forming a ring from a BP ribbon.

van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices

Because of the chemical inertness of two dimensional (2D) hexagonal-boron nitride (h-BN), few atomic-layer h-BN is often used to encapsulate air-sensitive 2D crystals such as black phosphorus (BP). However, the effects of h-BN on Schottky barrier height, doping, and contact resistance are not well-known. Here, we investigate these effects by fabricating h-BN encapsulated BP transistors with cobalt (Co) contacts. In sharp contrast to directly Co contacted p-type BP devices, we observe strong n-type conduction upon insertion of the h-BN at the Co/BP interface. First-principles calculations show that this difference arises from the much larger interface dipole at the Co/h-BN interface compared to the Co/BP interface, which reduces the work function of the Co/h-BN contact. The Co/h-BN contacts exhibit low contact resistances (∼4.5 kΩ) and are Schottky barrier-free. This allows us to probe high electron mobilities (4,200 cm²/(V s)) and observe insulator-metal transitions even under two-terminal measurement geometry.

Progress on Electronic and Optoelectronic Devices of 2D Layered Semiconducting Materials

2D layered semiconducting materials (2DLSMs) represent the thinnest semiconductors, holding many novel properties, such as the absence of surface dangling bonds, sizable band gaps, high flexibility, and ability of artificial assembly. With the prospect of bringing revolutionary opportunities for electronic and optoelectronic applications, 2DLSMs have prospered over the past twelve years. From materials preparation and property exploration to device applications, 2DLSMs have been extensively investigated and have achieved great progress. However, there are still great challenges for high-performance devices. In this review, we provide a brief overview on the recent breakthroughs in device optimization based on 2DLSMs, particularly focussing on three aspects: device configurations, basic properties of channel materials, and heterostructures. The effects from device configurations, i.e., electrical contacts, dielectric layers, channel length, and substrates, are discussed. After that, the affect of the basic properties of 2DLSMs on device performance is summarized, including crystal defects, crystal symmetry, doping, and thickness. Finally, we focus on heterostructures based on 2DLSMs. Through this review, we try to provide a guide to improve electronic and optoelectronic devices of 2DLSMs for achieving practical device applications in the future.

Air stable black phosphorous in polyaniline-based nanocomposite

The greatest challenge regarding black phosphorus (BP) comes as a result of its fast degradation when exposed to ambient conditions, which has overshadowed its applications. Herein, we report a simple and efficient route towards overcoming BP deterioration by preparing a nanocomposite with the conducting polymer polyaniline (PANI). The liquid/liquid interfacial method was employed to produce transparent, freestanding and transferable thin film of BP covered by PANI, with high stability under ambient atmosphere, up to 60 days. Otherwise, the uncapped exfoliated neat BP degraded in solely 3 days under the same conditions. Characterization data show that PANI covers efficiently the BP flakes, indicating favorable interactions between the components. The results presented here can be considered a breakthrough for employing BP as thin film in different technological applications, considering the properties of BP itself or taking advantage of synergistically combining the properties of both components.

Environmental Screening Effects in 2D Materials: Renormalization of the Bandgap, Electronic Structure, and Optical Spectra of Few-Layer Black Phosphorus

Few-layer black phosphorus has recently emerged as a promising 2D semiconductor, notable for its widely tunable bandgap, highly anisotropic properties, and theoretically predicted large exciton binding energies. To avoid degradation, it has become common practice to encapsulate black phosphorus devices. It is generally assumed that this encapsulation does not qualitatively affect their optical properties. Here, we show that the contrary is true. We have performed ab initio GW and GW plus Bethe-Salpeter equation (GW-BSE) calculations to determine the quasiparticle (QP) band structure and optical spectrum of one-layer (1L) through four-layer (4L) black phosphorus, with and without encapsulation between hexagonal boron nitride and sapphire. We show that black phosphorus is exceptionally sensitive to environmental screening. Encapsulation reduces the exciton binding energy in 1L by as much as 70% and completely eliminates the presence of a bound exciton in the 4L structure. The reduction in the exciton binding energies is offset by a similarly large renormalization of the QP bandgap so that the optical gap remains nearly unchanged, but the nature of the excited states and the qualitative features of the absorption spectrum change dramatically.

Fundamental Insights into the Degradation and Stabilization of Thin Layer Black Phosphorus

Herein, we have developed a systematic study on the oxidation and passivation of mechanically exfoliated black phosphorus (BP). We analyzed the strong anisotropic behavior of BP by scanning Raman microscopy providing an accurate method for monitoring the oxidation of BP via statistical Raman spectroscopy. Furthermore, different factors influencing the environmental instability of the BP, i.e., thickness, lateral dimensions or visible light illumination, have been investigated in detail. Finally, we discovered that the degradation of few-layer BP flakes of <10 nm can be suppressed for months by using ionic liquids, paving the way for the development of BP-based technologies.

Quantum confinement in black phosphorus-based nanostructures

The modification of an idealized infinite bulk system by dimensional reduction or structural distortion results in quantum confinement effects (QCEs). For example, dimensional reduction of a black phosphorus structure leads to the realization of few-layer systems, creation of edges and surfaces, nanoribbons, quantum dots, and antidot lattices while structural distortion involves simple bending (including nanotubes) and rippling. Black phosphorus ('phosphorene' in the single-layer limit) has been of recent interest due to its relatively large charge carrier mobility and moderate semiconducting band gap, which remains direct irrespective of the number of layers. In this review the state-of-the-art properties of black phosphorus in its dimensionally reduced and structurally distorted forms are discussed, with emphasis on how quantum confinement impacts the material's properties.

Ambient Protection of Few-Layer Black Phosphorus via Sequestration of Reactive Oxygen Species

Few-layer black phosphorous (BP) has emerged as a promising candidate for next-generation nanophotonic and nanoelectronic devices. However, rapid ambient degradation of mechanically exfoliated BP poses challenges in its practical deployment in scalable devices. To date, the strategies employed to protect BP have relied upon preventing its exposure to atmospheric conditions. Here, an approach that allows this sensitive material to remain stable without requiring its isolation from the ambient environment is reported. The method draws inspiration from the unique ability of biological systems to avoid photo-oxidative damage caused by reactive oxygen species. Since BP undergoes similar photo-oxidative degradation, imidazolium-based ionic liquids are employed as quenchers of these damaging species on the BP surface. This chemical sequestration strategy allows BP to remain stable for over 13 weeks, while retaining its key electronic characteristics. This study opens opportunities to practically implement BP and other environmentally sensitive 2D materials for electronic applications.

Recovery of the Pristine Surface of Black Phosphorus by Water Rinsing and Its Device Application

Black phosphorus (BP) has attracted significant attention due to its excellent optical and electrical properties. However, the rapid degradation of BP under ambient air limits further research on its properties and implementation in various fields. This degrading behavior lowers the performance of BP-based devices and can even result in a complete failure when exposed to air for an extended period of time. In our research, the degraded surface with "bubbles" was recovered to its pristine state by rinsing with deionized water and following with post-treatments. The formation of bubbles and their optical, morphological, and electrical effects were systematically investigated by fabricating BP field-effect transistors (FETs) in conjunction with micro-Raman spectroscopy and atomic force microscopy. Water rinsing of the degraded BP flakes also allowed us to thin BP flakes down because phosphorus atoms are consumed while forming bubbles. Therefore, recovery of the pristine surface not only results in a smoother and thinner morphology but also improves device performances. After the rinsing process, field-effect mobility of the BP FET was maintained, whereas a significant enhancement in the switching behaviors was achieved in conclusion. The capability of reversing the inevitable degradation that occurs once exposed to ambient conditions can open up new opportunities for further applications of BP that was limited due to its instability.

Probing Single Vacancies in Black Phosphorus at the Atomic Level

Utilizing a combination of low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) and electronic structure calculations, we characterize the structural and electronic properties of single atomic vacancies within several monolayers of the surface of black phosphorus. We illustrate, with experimental analysis and tight-binding calculations, that we can depth profile these vacancies and assign them to specific sublattices within the unit cell. Measurements reveal that the single vacancies exhibit strongly anisotropic and highly delocalized charge density, laterally extended up to 20 atomic unit cells. The vacancies are then studied with STS, which reveals in-gap resonance states near the valence band edge and a strong p-doping of the bulk black phosphorus crystal. Finally, quasiparticle interference generated near these vacancies enables the direct visualization of the anisotropic band structure of black phosphorus.

Emerging Trends in Phosphorene Fabrication towards Next Generation Devices

The challenge of science and technology is to design and make materials that will dominate the future of our society. In this context, black phosphorus has emerged as a new, intriguing two-dimensional (2D) material, together with its monolayer, which is referred to as phosphorene. The exploration of this new 2D material demands various fabrication methods to achieve potential applications- this demand motivated this review. This article is aimed at supplementing the concrete understanding of existing phosphorene fabrication techniques, which forms the foundation for a variety of applications. Here, the major issue of the degradation encountered in realizing devices based on few-layered black phosphorus and phosphorene is reviewed. The prospects of phosphorene in future research are also described by discussing its significance and explaining ways to advance state-of-art of phosphorene-based devices. In addition, a detailed presentation on the demand for future studies to promote well-systemized fabrication methods towards large-area, high-yield and perfectly protected phosphorene for the development of reliable devices in optoelectronic applications and other areas is offered.

Solution-Based Processing of Monodisperse Two-Dimensional Nanomaterials

Exfoliation of single-layer graphene from bulk graphite and the subsequent discovery of exotic physics and emergent phenomena in the atomically thin limit has motivated the isolation of other two-dimensional (2D) layered nanomaterials. Early work on isolated 2D nanomaterial flakes has revealed a broad range of unique physical and chemical properties with potential utility in diverse applications. For example, the electronic and optical properties of 2D nanomaterials depend strongly on atomic-scale variations in thickness, enabling enhanced performance in optoelectronic technologies such as light emitters, photodetectors, and photovoltaics. Much of the initial research on 2D nanomaterials has relied on micromechanical exfoliation, which yields high-quality 2D nanomaterial flakes that are suitable for fundamental studies but possesses limited scalability for real-world applications. In an effort to overcome this limitation, solution-processing methods for isolating large quantities of 2D nanomaterials have emerged. Importantly, solution processing results in 2D nanomaterial dispersions that are amenable to roll-to-roll fabrication methods that underlie lost-cost manufacturing of thin-film transistors, transparent conductors, energy storage devices, and solar cells. Despite these advantages, solution-based exfoliation methods typically lack control over the lateral size and thickness of the resulting 2D nanomaterial flakes, resulting in polydisperse dispersions with heterogeneous properties. Therefore, post-exfoliation separation techniques are needed to achieve 2D nanomaterial dispersions with monodispersity in lateral size, thickness, and properties. In this Account, we survey the latest developments in solution-based separation methods that aim to produce monodisperse dispersions and thin films of emerging 2D nanomaterials such as graphene, boron nitride, transition metal dichalcogenides, and black phosphorus. First, we motivate the need for precise thickness control in 2D nanomaterials by reviewing thickness-dependent physical properties. Then we present a succinct survey of solution-based exfoliation methods that yield 2D nanomaterial dispersions in organic solvents and aqueous media. The Account subsequently focuses on separation methods, including a critical analysis of their relative strengths and weaknesses for 2D nanomaterials with different buoyant densities, van der Waals interactions, and chemical reactivities. Specifically, we evaluate sedimentation-based density gradient ultracentrifugation (sDGU) and isopycnic DGU (iDGU) for post-exfoliation 2D nanomaterial dispersion separation. The comparative advantages of sedimentation and isopycnic methods are presented in both aqueous and nonaqueous media for 2D nanomaterials with varying degrees of chemical reactivity. Finally, we survey methods for forming homogeneous thin films from 2D nanomaterial dispersions and emerging technologies that are likely to benefit from these structures. Overall, this Account provides not only an overview of the present state-of-the-art but also a forward-looking vision for the field of solution-processed monodisperse 2D nanomaterials.

Schottky Barriers in Bilayer Phosphorene Transistors

It is unreliable to evaluate the Schottky barrier height (SBH) in monolayer (ML) 2D material field effect transistors (FETs) with strongly interacted electrode from the work function approximation (WFA) because of existence of the Fermi-level pinning. Here, we report the first systematical study of bilayer (BL) phosphorene FETs in contact with a series of metals with a wide work function range (Al, Ag, Cu, Au, Cr, Ti, Ni, and Pd) by using both ab initio electronic band calculations and quantum transport simulation (QTS). Different from only one type of Schottky barrier (SB) identified in the ML phosphorene FETs, two types of SBs are identified in BL phosphorene FETs: the vertical SB between the metallized and the intact phosphorene layer, whose height is determined from the energy band analysis (EBA); the lateral SB between the metallized and the channel BL phosphorene, whose height is determined from the QTS. The vertical SBHs show a better consistency with the lateral SBHs of the ML phosphorene FETs from the QTS compared than that of the popular WFA. Therefore, we develop a better and more general method than the WFA to estimate the lateral SBHs of ML semiconductor transistors with strongly interacted electrodes based on the EBA for its BL counterpart. In terms of the QTS, n-type lateral Schottky contacts are formed between BL phosphorene and Cr, Al, and Cu electrodes with electron SBH of 0.27, 0.31, and 0.32 eV, respectively, while p-type lateral Schottky contacts are formed between BL phosphorene and Pd, Ti, Ni, Ag, and Au electrodes with hole SBH of 0.11, 0.18, 0.19, 0.20, and 0.21 eV, respectively. The theoretical polarity and SBHs are in good agreement with available experiments. Our study provides an insight into the BL phosphorene-metal interfaces that are crucial for designing the BL phosphorene device.

Cyclical Thinning of Black Phosphorus with High Spatial Resolution for Heterostructure Devices

A high spatial resolution, cyclical thinning method for realizing black phosphorus (BP) heterostructures is reported. This process utilizes a cyclic technique involving BP surface oxidation and vacuum annealing to create BP flakes as thin as 1.6 nm. The process also utilizes a spatially patternable mask created by evaporating Al that oxidizes to form Al₂O₃, which stabilizes the unetched BP regions and enables the formation of lateral heterostructures with spatial resolution as small as 150 nm. This thinning/patterning technique has also been used to create the first-ever lateral heterostructure BP metal oxide semiconductor field-effect transistor (MOSFET), in which half of a BP flake was thinned in order to increase its band gap. This heterostructure MOSFET showed an ON/OFF current ratio improvement of 1000× compared to homojunction MOSFETs.

Sensitive Detection of Carcinoembryonic Antigen Using Stability-Limited Few-Layer Black Phosphorus as an Electron Donor and a Reservoir

The instability of few-layer black phosphorus (FL-BP) hampers its further applications. Here, it can be demonstrated that the instability of FL-BP can also be the advantage for application in biosensor. First, gold nanoparticle/FL-BP (BP-Au) hybrid is facilely synthesized by mixing Au precursor with FL-BP. BP-Au shows outstanding catalytic activity (K = 1120 s^-1 g^-1 ) and low activation energy (17.53 kJ mol^-1 ) for reducing 4-nitrophenol, which is attributed to the electron-reservoir and electron-donor properties of FL-BP, and synergistic interaction of Au nanoparticles and FL-BP. Oxidation of FL-BP after catalytic reaction is further confirmed by transmission electron microscope, X-ray photoelectron spectroscopy, and zeta potentials. Second, the catalytic activity of BP-Au can be reversibly switched from "inactive" to "active" upon treatment with antibody and antigen in solution, thus providing a versatile platform for label-free colorimetric detection of biomarkers. The sensor shows a wide detection range (1 pg mL^-1 to -10 µg mL^-1 ), high sensitivity (0.20 pg mL^-1 ), and selectivity for detecting carcinoembryonic antigen (CEA). Finally, the biosensor has been used to detect CEA in colon and breast cancer clinical samples with satisfactory results. Therefore, the instability of BP can also be the advantage for application in detecting cancer biomarker in clinic.

Vastly enhancing the chemical stability of phosphorene by employing an electric field

Currently, a major hurdle preventing phosphorene from various electronic applications is its rapid oxidation under ambient conditions. Thus how to enhance its chemical stability by suppressing oxidation becomes an urgent task. Here, we reveal a highly effective procedure to suppress the oxidation of phosphorene by employing a suitable van der Waals (vdW) substrate and a vertical electric field. Our first-principles study shows that the phosphorene-MoSe₂ vdW heterostructure is able to reverse the stability of physisorption and chemisorption of molecular O₂ on phosphorene. With further application of a vertical electric field of -0.6 V Å^-1, the energy barrier for oxidation is able to further increase to 0.91 eV, leading to a 10⁵ times enhancement in its lifetime compared with that without using the procedure at room temperature. Our work presents a viable strategy to vastly enhance the chemical stability of phosphorene in air.

Recent Advances in Ultrathin Two-Dimensional Nanomaterials

Since the discovery of mechanically exfoliated graphene in 2004, research on ultrathin two-dimensional (2D) nanomaterials has grown exponentially in the fields of condensed matter physics, material science, chemistry, and nanotechnology. Highlighting their compelling physical, chemical, electronic, and optical properties, as well as their various potential applications, in this Review, we summarize the state-of-art progress on the ultrathin 2D nanomaterials with a particular emphasis on their recent advances. First, we introduce the unique advances on ultrathin 2D nanomaterials, followed by the description of their composition and crystal structures. The assortments of their synthetic methods are then summarized, including insights on their advantages and limitations, alongside some recommendations on suitable characterization techniques. We also discuss in detail the utilization of these ultrathin 2D nanomaterials for wide ranges of potential applications among the electronics/optoelectronics, electrocatalysis, batteries, supercapacitors, solar cells, photocatalysis, and sensing platforms. Finally, the challenges and outlooks in this promising field are featured on the basis of its current development.

Femtosecond photo-switching of interface polaritons in black phosphorus heterostructures

The possibility of hybridizing collective electronic motion with mid-infrared light to form surface polaritons has made van der Waals layered materials a versatile platform for extreme light confinement and tailored nanophotonics. Graphene and its heterostructures have attracted particular attention because the absence of an energy gap allows plasmon polaritons to be tuned continuously. Here, we introduce black phosphorus as a promising new material in surface polaritonics that features key advantages for ultrafast switching. Unlike graphene, black phosphorus is a van der Waals bonded semiconductor, which enables high-contrast interband excitation of electron-hole pairs by ultrashort near-infrared pulses. Here, we design a SiO₂/black phosphorus/SiO₂ heterostructure in which the surface phonon modes of the SiO₂ layers hybridize with surface plasmon modes in black phosphorus that can be activated by photo-induced interband excitation. Within the Reststrahlen band of SiO₂, the hybrid interface polariton assumes surface-phonon-like properties, with a well-defined frequency and momentum and excellent coherence. During the lifetime of the photogenerated electron-hole plasma, coherent hybrid polariton waves can be launched by a broadband mid-infrared pulse coupled to the tip of a scattering-type scanning near-field optical microscopy set-up. The scattered radiation allows us to trace the new hybrid mode in time, energy and space. We find that the surface mode can be activated within ∼50 fs and disappears within 5 ps, as the electron-hole pairs in black phosphorus recombine. The excellent switching contrast and switching speed, the coherence properties and the constant wavelength of this transient mode make it a promising candidate for ultrafast nanophotonic devices.

Air-stable few-layer black phosphorus phototransistor for near-infrared detection

We have demonstrated a few-layer black phosphorus (BP) phototransistor of stable operation in ambient air environment and at near-infrared light (λ = 1550 nm). The air-stable electronic and optoelectronic properties of the few-layer BP phototransistor have been achieved by a proper Al₂O₃ passivation. The optical identification method and qualitative and quantitative electrical characterizations of the few-layer BP phototransistor in dark state confirmed that the device performance was robust in ambient air, to further chemical treatments, and storage of more than six months. In addition, the low-frequency noise characterizations had revealed that the noise spectral density related to the sensitivity of phototransistor was reduced. Owing to the suppression of interaction between few-layer BP and adsorbates arising from the Al₂O₃ passivation, a fast rise time of the few-layer BP phototransistor, less than 100 μs, had been observed, demonstrating the intrinsic photoresponse properties of few-layer BP. The low dark current of ∼4 nA at the operation bias and the reasonable responsivity of ∼6 mA W^-1 were obtained under the condition lacking adsorbates interactions. Internally, the dark current and responsivity level was tunable by changing the operation bias. Our results are close to the intrinsic properties of the few-layer BP phototransistor, implying that it can be a building block of functioned few-layer BP photodetectors.

Black Phosphorus N-Type Field-Effect Transistor with Ultrahigh Electron Mobility via Aluminum Adatoms Doping

High-performance black phosphorus n-type field-effect transistors are realized using Al adatoms as effective electron donors, which achieved a record high mobility of >1495 cm² V^-1 s^-1 at 260 K. The electron mobility is corroborated to charged-impurity scattering at low temperature, whilst metallic-like conduction is observed at high gate bias with increased carrier density due to enhanced electron-phonon interactions at high temperature.

Passivation of Black Phosphorus via Self-Assembled Organic Monolayers by van der Waals Epitaxy

An effective passivation approach to protect black phosphorus (BP) from degradation based on multi-scale simulations is proposed. The self-assembly of perylene-3,4,9,10-tetracarboxylic dianhydride monolayers via van der Waals epitaxy on BP does not break the original electronic properties of BP. The passivation layer thickness is only 2 nm. This study opens up a new pathway toward fine passivation of BP.

Field Effect Optoelectronic Modulation of Quantum-Confined Carriers in Black Phosphorus

We report measurements of the infrared optical response of thin black phosphorus under field-effect modulation. We interpret the observed spectral changes as a combination of an ambipolar Burstein-Moss (BM) shift of the absorption edge due to band-filling under gate control, and a quantum confined Franz-Keldysh (QCFK) effect, phenomena that have been proposed theoretically to occur for black phosphorus under an applied electric field. Distinct optical responses are observed depending on the flake thickness and starting carrier concentration. Transmission extinction modulation amplitudes of more than two percent are observed, suggesting the potential for use of black phosphorus as an active material in mid-infrared optoelectronic modulator applications.

Photoabsorption Tolerance of Intrinsic Point Defects and Oxidation in Black Phosphorus Quantum Dots

Black phosphorus quantum dots (BPQDs) exhibit excellent optical and photothermal properties and promising applications in optoelectronics and biomedicine. However, various intrinsic structural defects and oxidation are nearly unavoidable in preparation of BPQDs and how they affect the electronic and optical properties remains unclear. Here, by employing time-dependent density functional theory, we reveal that there are two types of photoabsorption in BPQDs for both point defects and oxidation. A close structure-absorption relation is unraveled: BPQDs are defect-tolerant and show excellent photoabsorption as long as the coordination number (CN) of defective P atoms is 3. By contrast, the unsaturated or oversaturated P atoms with CN ≠ 3 create in-gap-states (IGSs) and completely quench the optical absorption. An effective way to eliminate the IGSs and repair the photoabsorption of defective BPQDs via sufficient hydrogen passivation is further proposed.

Black phosphorus nanostructures: recent advances in hybridization, doping and functionalization

This tutorial review summarizes the recent advances in BP-based nanostructures by means of hybridization, doping and functionalization.

Anisotropic carrier mobility in buckled two-dimensional GaN

Converting FGaNH to HGaNH can significantly suppress hole mobility (even close to zero) and result in a transition from p-type-like semiconductor (FGaNH) to n-type-like semiconductor (HGaNH).