Critical assessment of charge mobility extraction in FETs

Temperature-Independent Polarization of Ultrathin Phthalocyanine-Based Hybrid Organic/Inorganic Heterojunctions

The combination of organic and inorganic materials at the nanoscale to form functional hybrid structures is a powerful strategy to develop novel electronic devices. The knowledge on semiconductor thin-film polarization brings direct benefits to the hybrid organic/inorganic electronics, becoming primordial for the development of devices such as electromechanical logic gates, solar cells, miniaturized valves, organic diodes, and molecular supercapacitors, among others. Here, we report on the dielectric polarization of ultrathin organic semiconducting films-ca. 5 nm thick metal phthalocyanine ensembles (viz., CuPc, CoPc, F16CuPc)-employed to build up hybrid metal/oxide/molecule heterojunctions. Such hybrid heterostructures are fully integrated into self-rolled nanomembrane-based capacitors and further investigated by impedance spectroscopy measurements as a function of temperature (from 6 to 300 K). The dielectric polarization of the metal phthalocyanines is found to be thermally activated above a specific threshold temperature, which depends on the molecular structure. Below this threshold, the current leakage across the system is suppressed, thus evidencing intrinsic-like polarization mechanisms. The temperature-independent permittivities of the ultrathin molecular films are found to be strongly dependent on the organic/inorganic hybrid interfaces, while the calculated relaxation times are more likely related to each single-molecule polarization. Beyond the advances in determining the temperature dependence of the permittivity for ultrathin phthalocyanine films integrated within solid-state electronics, our results also support the deterministic design of novel functional devices based on nanoscale hybrid organic/inorganic heterojunctions.

Tuning Charge Transport in PVDF-Based Organic Ferroelectric Transistors: Status and Outlook

The use of polymer ferroelectric dielectrics in organic field-effect transistors (FETs) for nonvolatile memory application was demonstrated more than 15 years ago. The ferroelectric dielectric polyvinylidene fluoride (PVDF) and its copolymers are most widely used for such applications. In addition to memory applications, polymer ferroelectrics as a dielectric layer in organic FETs yield insights into interfacial transport properties. Advantages of polymer ferroelectric dielectrics are their high dielectric constant compared to other polymer dielectrics and their tunable dielectric constant with temperature. Further, the polarization strength may also be tuned by externally poling the ferroelectric dielectric layer. Thus, PVDF and its copolymers provide a unique testbed not just for investigating polarization induced transport in organic FETs, but also enhancing device performance. This article discusses recent developments of PVDF-based ferroelectric organic FETs and capacitors with a focus on tuning transport properties. It is shown that FET carrier mobilities exhibit a weak temperature dependence as long as the dielectric is in the ferroelectric phase, which is attributed to a polarization fluctuation driven process. The low carrier mobilities in PVDF-based FETs can be enhanced by tuning the poling condition of the dielectric. In particular, by using solution-processed small molecule semiconductors and other donor-acceptor copolymers, it is shown that selective poling of the PVDF-based dielectric layer dramatically improves FET properties. Finally, the prospects of further improvement in organic ferroelectric FETs and their challenges are provided.

Photosensitive n-Type Doping Using Perovskite CsPbX3 Quantum Dots for Two-Dimensional MSe2 (M = Mo and W) Field-Effect Transistors

Perovskite CsPbX₃ (X = Br, Cl, and I) nanostructures have been intensively studied as they are luminescent, photovoltaic, and photosensitizing active materials. Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) with MX₂ (M = Mo, W; X = S, Se, Te, etc.) structures have been used in flexible optoelectronic devices. In this study, perovskite green-light-emitting CsPbBr₂I₁ quantum dots (QDs) and blue-light-emitting CsPb(Cl/Br)₃-QDs are utilized to enhance the photoresponsive characteristics of 2D MSe₂ (M = Mo and W)-based field-effect transistors (FETs). From laser confocal microscopy photoluminescence (PL) experiments, PL quenching of the perovskite CsPb(Cl/Br)₃-QDs and CsPbBr₂I₁-QDs is observed after hybridization with MoSe₂ and WSe₂ layers, respectively, which reflects the charge-transfer effect. According to the characteristics of the FETs based on the WSe₂, MoSe₂, WSe₂/CsPbBr₂I₁-QDs hybrid, and MoSe₂/CsPb(Cl/Br)₃-QDs hybrid, the p-channel current (with hole mobility) is considerably decreased after the hybridization with the QDs. Notably, under incident light, the n-channel photocurrent and photoresponsivity of the FET are substantially increased, and the threshold voltage is negatively shifted owing to the hybridization with the perovskite QDs. The results show that the photosensitive n-type doping effect on the 2D MoSe₂ and WSe₂ nanosystems originates from the photogating effect by the trap states after the hybridization with various perovskite CsPbX₃-QDs.

Enhancement-mode ion-based transistor as a comprehensive interface and real-time processing unit for in vivo electrophysiology

Bioelectronic devices must be fast and sensitive to interact with the rapid, low-amplitude signals generated by neural tissue. They should also be biocompatible and soft, and should exhibit long-term stability in physiologic environments. Here, we develop an enhancement-mode, internal ion-gated organic electrochemical transistor (e-IGT) based on a reversible redox reaction and hydrated ion reservoirs within the conducting polymer channel, which enable long-term stable operation and shortened ion transit time. E-IGT transient responses depend on hole rather than ion mobility, and combine with high transconductance to result in a gain-bandwidth product that is several orders of magnitude above that of other ion-based transistors. We used these transistors to acquire a wide range of electrophysiological signals, including in vivo recording of neural action potentials, and to create soft, biocompatible, long-term implantable neural processing units for the real-time detection of epileptic discharges. E-IGTs offer a safe, reliable and high-performance building block for chronically implanted bioelectronics, with a spatiotemporal resolution at the scale of individual neurons.

Binding and electronic level alignment of π-conjugated systems on metals

We review the binding and energy level alignment of π-conjugated systems on metals, a field which during the last two decades has seen tremendous progress both in terms of experimental characterization as well as in the depth of theoretical understanding. Precise measurements of vertical adsorption distances and the electronic structure together with ab initio calculations have shown that most of the molecular systems have to be considered as intermediate cases between weak physisorption and strong chemisorption. In this regime, the subtle interplay of different effects such as covalent bonding, charge transfer, electrostatic and van der Waals interactions yields a complex situation with different adsorption mechanisms. In order to establish a better understanding of the binding and the electronic level alignment of π-conjugated molecules on metals, we provide an up-to-date overview of the literature, explain the fundamental concepts as well as the experimental techniques and discuss typical case studies. Thereby, we relate the geometric with the electronic structure in a consistent picture and cover the entire range from weak to strong coupling.

Improved Contacts and Device Performance in MoS2 Transistors Using a 2D Semiconductor Interlayer

We report a contact engineering method to minimize the Schottky barrier height (SBH) and contact resistivity of MoS₂ field-effect transistors (FETs) by using ultrathin 2D semiconductors as contact interlayers. We demonstrate that the addition of a few-layer MoSe₂ between the MoS₂ channel and Ti electrodes effectively reduces the SBH at the contacts from ∼100 to ∼25 meV, contact resistivity from ∼6 × 10^-5 to ∼1 × 10^-6 Ω cm², and current transfer length from ∼425 to ∼60 nm. The drastic reduction of SBH can be attributed to the synergy of Fermi-level pinning close to the conduction band edge of the MoSe₂ interlayer and favorable conduction-band offset between the MoSe₂ interlayer and MoS₂ channel. As a result of the improved contacts, MoS₂ FETs with Ti/MoSe₂ contacts also demonstrate higher two-terminal mobility.

Two Isomeric Azulene-Decorated Naphthodithiophene Diimide-based Triads: Molecular Orbital Distribution Controls Polarity Change of OFETs Through Connection Position

Altering the charge carrier transport polarities of organic semiconductors by molecular orbital distribution has gained great interest. Herein, we report two isomeric azulene-decorated naphthodithiophene diimide (NDTI)-based triads (e.g., NDTI-B2Az and NDTI-B6Az), in which two azulene units were connected with NDTI at the 2-position of the azulene ring in NDTI-B2Az, whereas two azulene units were incorporated with NDTI at the 6-position of the azulene ring in NDTI-B6Az. The two isomeric triads were excellently soluble in common organic solvents. Density functional theory calculations on the molecular orbital distributions of the triads reveal that the lowest unoccupied molecular orbitals are completely delocalized over the entire molecule for both NDTI-B2Az and NDTI-B6Az, indicating great potential for n-type transport behavior, whereas the highest occupied molecular orbitals are mainly delocalized over the entire molecule for NDTI-B2Az or only localized at the two terminal azulene units for NDTI-B6Az, implying great potential for p-type transport behavior for the former and a disadvantage of hole carrier transport for the latter. Under ambient conditions, solution-processed bottom-gate top-contact transistors based on NDTI-B2Az showed ambipolar field-effect transistor (FET) characteristics with high electron and hole mobilities of 0.32 (effective electron mobility ≈0.14 cm² V^-1 s^-1 according to a reliability factor of 43%) and 0.03 cm² V^-1 s^-1 (effective hole mobility ≈0.01 cm² V^-1 s^-1 according to a reliability factor of 33%), respectively, whereas a typically unipolar n-channel behavior is found for a film of NDTI-B6Az with a high electron mobility up to 0.13 cm² V^-1 s^-1 (effective electron mobility ≈0.06 cm² V^-1 s^-1 according to a reliability factor of 43%). The results indicate that the polarity change of organic FETs based on the two isomeric triads could be controlled by the molecular orbital distributions through the connection position between the azulene unit and NDTI.

100th Anniversary of Macromolecular Science Viewpoint: Recent Advances and Opportunities for Mixed Ion and Charge Conducting Polymers

Macromolecules that exhibit both electron transport and ionic mass transport (i.e., mixed conducting polymers) are ascendant with respect to both emerging application spaces and the elucidation of their fundamental physical principles. The unique coupling between the two modes of conduction puts these materials at the center of many next-generation organic electronic applications. The molecular details of this coupling are also at the epicenter of outstanding questions about how these materials function; how monomer and macromolecular chemistry dictates observable properties; and ultimately, how these macromolecular materials can be rationally designed, processed, and implemented into high-performance devices. Here, we focus on what is currently known about coupled ionic-electronic transport in these polymers and where there are open opportunities in the field. These opportunities include the syntheses of designer macromolecules, the need for significant simulation efforts that provide molecular-level insights into the mixed conduction mechanism, and the need for advanced characterization techniques for real-time monitoring of polymer morphology, as this is critical to coupled ion-charge transport processes. Considering the early stage of this important subfield of polymer science, we also present our view of how the development of mixed conductors can benefit from the lessons learned from previous polymer-based electronic devices.

Robust, high-performance n-type organic semiconductors

Organic semiconductors (OSCs) are important active materials for the fabrication of next-generation organic-based electronics. However, the development of n-type OSCs lags behind that of p-type OSCs in terms of charge-carrier mobility and environmental stability. This is due to the absence of molecular designs that satisfy the requirements. The present study describes the design and synthesis of n-type OSCs based on challenging molecular features involving a π-electron core containing electronegative N atoms and substituents. The unique π-electron system simultaneously reinforces both electronic and structural interactions. The current n-type OSCs exhibit high electron mobilities with high reliability, atmospheric stability, and robustness against environmental and heat stresses and are superior to other existing n-type OSCs. This molecular design represents a rational strategy for the development of high-end organic-based electronics.

Charge transport in high-mobility conjugated polymers and molecular semiconductors

Conjugated polymers and molecular semiconductors are emerging as a viable semiconductor technology in industries such as displays, electronics, renewable energy, sensing and healthcare. A key enabling factor has been significant scientific progress in improving their charge transport properties and carrier mobilities, which has been made possible by a better understanding of the molecular structure-property relationships and the underpinning charge transport physics. Here we aim to present a coherent review of how we understand charge transport in these high-mobility van der Waals bonded semiconductors. Specific questions of interest include estimates for intrinsic limits to the carrier mobilities that might ultimately be achievable; a discussion of the coupling between charge and structural dynamics; the importance of molecular conformations and mesoscale structural features; how the transport physics of conjugated polymers and small molecule semiconductors are related; and how the incorporation of counterions in doped films-as used, for example, in bioelectronics and thermoelectric devices-affects the electronic structure and charge transport properties.

Low Operating Voltage Organic Field-Effect Transistors with Gelatin as a Moisture-Induced Ionic Dielectric Layer: The Issues of High Carrier Mobility

We have developed low-voltage (<2 V) flexible organic field-effect transistors (OFETs) with high carrier mobility using gelatin as a moisture-induced ionic gate dielectric system. Ionic concentration in the gelatin layer depends on the relative humidity condition during the measurement. The capacitance of the dielectric layer used for the calculation of field-effect carrier mobility for the OFETs crucially depends on the frequency at which the capacitance was measured. The results of frequency-dependent gate capacitance together with the anomalous bias-stress effect have been used to determine the exact frequency at which the carrier mobility should be calculated. The observed carrier mobility of the devices is 0.33 cm²/Vs with the capacitance measured at frequency 20 mHz. It can be overestimated to 14 cm²/Vs with the capacitance measured at 100 kHz. The devices can be used as highly sensitive humidity sensors. About three orders of magnitude variation in device current have been observed on the changes in relative humidity (RH) levels from 10 to 80%. The devices show a fast response with a response and recovery times of ∼100 and ∼110 ms, respectively. The devices are flexible up to a 5 mm bending radius.

Work Function Engineering of Electrohydrodynamic-Jet-Printed PEDOT:PSS Electrodes for High-Performance Printed Electronics

Poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) has demonstrated outstanding performance as a charge transport layer or an electrode in various electronic devices, including organic solar cells, organic light-emitting diodes, and organic field-effect transistors (OFETs). The electrical properties of these devices are affected by the contact properties at the PEDOT:PSS-semiconductor junction. In this research, we performed work function (WF) engineering of electrohydrodynamic (EHD)-jet-printed PEDOT:PSS and successfully used it as an electrode to fabricate high-performance OFETs and complementary logic circuits. Two types of PEDOT:PSS materials-one with a high WF (HWF, 5.28 eV) and the other with a low WF (LWF, 4.53 eV)-were synthesized and EHD-jet-printed. The WF of PEDOT:PSS was deterministically modulated by approximately 0.75 eV through simple mixing of the two synthesized PEDOT:PSS materials in various ratios. OFETs fabricated with HWF and LWF PEDOT:PSS electrodes showed excellent electrical properties, including the ON/OFF switching ratio higher than 10⁷ and the highest carrier mobility greater than 1 cm²·V^-1·s^-1. Furthermore, the HWF and LWF PEDOT:PSS electrodes were integrated to fabricate complementary metal-oxide-semiconductor (CMOS) NOT, NOR, and NAND circuits.

Universal three-dimensional crosslinker for all-photopatterned electronics

All-solution processing of large-area organic electronics requires multiple steps of patterning and stacking of various device components. Here, we report the fabrication of highly integrated arrays of polymer thin-film transistors and logic gates entirely through a series of solution processes. The fabrication is done using a three-dimensional crosslinker in tetrahedral geometry containing four photocrosslinkable azide moieties, referred to as 4Bx. 4Bx can be mixed with a variety of solution-processable electronic materials (polymer semiconductors, polymer insulators, and metal nanoparticles) and generate crosslinked network under exposure to UV. Fully crosslinked network film can be formed even at an unprecedentedly small loading, which enables preserving the inherent electrical and structural characteristics of host material. Because the crosslinked electronic component layers are strongly resistant to chemical solvents, micropatterning the layers at high resolution as well as stacking the layers on top of each other by series of solution processing steps is possible.

To enable the large-area manufacture of solution-processed organic electronics, direct photocrosslinking processes has emerged as a promising technology solution. Here, the authors report an efficient universal crosslinking agent for micropatterning of stacked multi-layered organic electronics.

Roles of interfaces in the ideality of organic field-effect transistors

Organic field-effect transistors (OFETs) are fundamental building blocks for flexible and large-area electronics due to their superior solution-processability, flexibility and stretchability. OFETs with high ideality are essential to their practical applications. In reality, however, many OFETs still suffer from non-ideal behaviors, such as gate-dependent mobility, which thus hinders the extraction of their intrinsic performance. It is much desired to gain a comprehensive understanding of the origins of these non-idealities. OFETs are primarily interface-related devices, and hence their performance and ideality are highly dependent on the interface properties between each device component. This review will focus on the recent progress in investigating the non-ideal behaviors of OFETs. In particular, the roles of interfaces, including the organic semiconductor (OSC)/dielectric interface, OSC/electrode interface and OSC/atmosphere interface, in determining the ideality of OFETs are summarized. Viable approaches through interface optimization to improve the device ideality are also reviewed. Finally, an overview of the outstanding challenges as well as the future development directions for the construction of ideal OFETs is given.

Molecular Semiconductors for Logic Operations: Dead-End or Bright Future?

The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm² V^-1 s^-1 . However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.

Interface Engineering in Organic Field-Effect Transistors: Principles, Applications, and Perspectives

Heterogeneous interfaces that are ubiquitous in optoelectronic devices play a key role in the device performance and have led to the prosperity of today's microelectronics. Interface engineering provides an effective and promising approach to enhancing the device performance of organic field-effect transistors (OFETs) and even developing new functions. In fact, researchers from different disciplines have devoted considerable attention to this concept, which has started to evolve from simple improvement of the device performance to sophisticated construction of novel functionalities, indicating great potential for further applications in broad areas ranging from integrated circuits and energy conversion to catalysis and chemical/biological sensors. In this review article, we provide a timely and comprehensive overview of current efficient approaches developed for building various delicate functional interfaces in OFETs, including interfaces within the semiconductor layers, semiconductor/electrode interfaces, semiconductor/dielectric interfaces, and semiconductor/environment interfaces. We also highlight the major contributions and new concepts of integrating molecular functionalities into electrical circuits, which have been neglected in most previous reviews. This review will provide a fundamental understanding of the interplay between the molecular structure, assembly, and emergent functions at the molecular level and consequently offer novel insights into designing a new generation of multifunctional integrated circuits and sensors toward practical applications.

Charge transport mechanism in networks of armchair graphene nanoribbons

In graphene nanoribbons (GNRs), the lateral confinement of charge carriers opens a band gap, the key feature that enables novel graphene-based electronics. Despite great progress, reliable and reproducible fabrication of single-ribbon field-effect transistors (FETs) is still a challenge, impeding the understanding of the charge transport. Here, we present reproducible fabrication of armchair GNR-FETs based on networks of nanoribbons and analyze the charge transport mechanism using nine-atom wide and, in particular, five-atom-wide GNRs with large conductivity. We show formation of reliable Ohmic contacts and a yield of functional FETs close to unity by lamination of GNRs to electrodes. Modeling the charge transport in the networks reveals that transport is governed by inter-ribbon hopping mediated by nuclear tunneling, with a hopping length comparable to the physical GNR length. Overcoming the challenge of low-yield single-ribbon transistors by the networks and identifying the corresponding charge transport mechanism is a key step forward for functionalization of GNRs.

Long-Range Order Self-Assembly of Conjugated Block Copolymers at Inclined Air-Liquid Interfaces

Here, we report that long-range order, direction-controlled, ultrathin conjugated polymer films can be formed by the self-assembly of conjugated block copolymers (i.e., poly(3-hexylthiophene)-block-poly(ethylene glycol)) at inclined air-water interfaces. Structure analyses revealed well-aligned nanowire arrays of poly(3-hexylthiophene) with a dramatically increased ordered domain size compared to the polymer films formed on a flat water surface. The improved degree of order was attributed to the flow field created by the enhanced solvent evaporation at the top of the water contact line. Note that it is challenging to prepare such well-ordered and molecularly thin films of conjugated polymers by conventional fabrication methods. The long-range order polymer film showed hole mobility an order of magnitude higher than polymer films formed on a flat interface when implemented as an active layer of field-effect transistor devices. This study demonstrates that a simple interface modification can significantly impact the self-assembly process, structure, and function of polymer films formed at the air-liquid interface.

Role of Multivalent Interactions in Dynamic-Template-Directed Assembly of Conjugated Polymers

Dynamic-template-directed assembly is a promising method to enhance molecular ordering and electronic properties of solution-coated polymer semiconductor thin films over a large area. In this work, we establish that multicomponent dynamic templates of complementary chemistries can promote polymer crystallization through cooperative multivalent interactions. We investigate this phenomenon using a combination of templating substrates including a fluoropolymer, a hydrogen-bonded liquid, and an ionic liquid (IL). Template-dependent multiscale morphology is studied by a comprehensive set of characterization techniques to understand how introducing diverse chemical moieties modulates polymer assembly. Our results clearly confirm synergistic effects between components of complementary chemistries constituting the dynamic template. The relative degree of crystallinity is improved by 50-150% for films deposited on multicomponent dynamic templates compared to their neat constituents. In addition, macroscopic alignment is increased significantly (2-5 times) compared to single-component templates. As a result, highly anisotropic charge transport is observed with apparent hole mobilities up to 3.6 cm² V^-1 s^-1. In contrast, such a synergistic effect is not observed when using a multicomponent dynamic template of comparable chemistries (i.e., IL and polymerized IL). We elucidate the origin of this synergistic effect by using attenuated total reflectance Fourier transform infrared spectroscopy and isothermal titration calorimetry. When the dynamic template comprises two or more components interacting with complementary binding sites on the conjugated polymer (CP) (esp. backbone vs side chain), the template-polymer interactions is significantly enhanced compared to the sum of single component contributions. These results provide valuable insights into surface-directed CP crystallization during large-area solution coating. Template dynamics is rarely studied and represents a new opportunity for guiding assembly of soft functional matter.

Synthesis of Cyclopentadithiophene-Diketopyrrolopyrrole Donor-Acceptor Copolymers for High-Performance Nonvolatile Floating-Gate Memory Transistors with Long Retention Time

Organic flash memories that employ solution-processed polymer semiconductors preferentially require internal stability of their active channel layers. In this paper, a series of new donor-acceptor copolymers based on cyclopentadithiophene (CDT) and diketopyrrolopyrrole (DPP) are synthesized to obtain high performance and operational stability of nonvolatile floating-gate memory transistors with various additional donor units including thiophene, thiophene-vinylene-thiophene (CDT-DPP-TVT), selenophene, and selenophene-vinylene-selenophene. Detailed analyses on the photophysical, two-dimensional grazing incident X-ray diffraction, and bias stress stability are discussed, which reveal that the CDT-DPP-TVT exhibits excellent bias stress stability over 10⁵ s. To utilize the robust nature of CDT-DPP-TVT, floating-gate transistors are fabricated by embedding Au nanoparticles between Cytop layers as a charge storage site. The resulting memory devices reveal bistable current states with high on/off current ratio larger than 10⁴ and each state can be distinguished for more than 1 year, indicating a long retention time. Moreover, repetitive writing-reading-erasing-reading test clearly supports the reproducible memory operation with reversible and reliable electrical responses. All these results suggest that the internal stability of CDT-DPP-TVT makes this copolymer a promising material for application in reliable organic flash memory.

"Disrupt and induce" intermolecular interactions to rationally design organic semiconductor crystals: from herringbone to rubrene-like pitched π-stacking

The packing structures of organic semiconductors in the solid state play critical roles in determining the performances of their optoelectronic devices, such as organic field-effect transistors (OFETs). It is a formidable challenge to rationally design molecular packing in the solid state owing to the difficulty of controlling intermolecular interactions. Here we report a unique materials design strategy based on the β-methylthionation of acenedithiophenes to generally and selectively control the packing structures of materials to create organic semiconductors rivalling rubrene, a benchmark high-mobility material with a characteristic pitched π-stacking structure in the solid state. Furthermore, the effect of the β-methylthionation on the packing structure was analyzed by Hirshfeld surface analysis together with theoretical calculations based on symmetry-adapted perturbation theory (SAPT). The results clearly demonstrated that the β-methylthionation of acenedithiophenes can universally alter the intermolecular interactions by disrupting the favorable edge-to-face manner in the parent acenedithiophenes and simultaneously inducing face-to-face and end-to-face interactions in the β-methylthionated acenedithiophenes. This “disrupt and induce” strategy to manipulate intermolecular interactions can open a door to rational packing design based on the molecular structure.

The rational design of organic semiconductor crystals is realized by β-methylthionation of acenedithiophenes through manipulating intermolecular interactions in a “disrupt and induce” manner.

Thienoisoindigo (TII)-Based Quinoidal Small Molecules for High-Performance n-Type Organic Field Effect Transistors

A novel quinoidal thienoisoindigo (TII)-containing small molecule family with dicyanomethylene end-capping units and various alkyl chains is synthesized as n-type organic small molecules for solution-processable organic field effect transistors (OFETs). The molecular structure of the 2-hexyldecyl substituted derivative, TIIQ-b16, is determined via single-crystal X-ray diffraction and shows that the TIIQ core is planar and exhibits molecular layers stacked in a "face-to-face" arrangement with short core intermolecular distances of 3.28 Å. The very planar core structure, shortest intermolecular N···H distance (2.52 Å), existence of an intramolecular non-bonded contact between sulfur and oxygen atom (S···O) of 2.80 Å, and a very low-lying LUMO energy level of -4.16 eV suggest that TIIQ molecules should be electron transporting semiconductors. The physical, thermal, and electrochemical properties as well as OFET performance and thin film morphologies of these new TIIQs are systematically studied. Thus, air-processed TIIQ-b16 OFETs exhibit an electron mobility up to 2.54 cm2 V-1 s-1 with a current ON/OFF ratio of 105-106, which is the first demonstration of TII-based small molecules exhibiting unipolar electron transport characteristics and enhanced ambient stability. These results indicate that construction of quinoidal molecule from TII moiety is a successful approach to enhance n-type charge transport characteristics.

Electrically Controlled Localized Charge Trapping at Amorphous Fluoropolymer-Electrolyte Interfaces

Charge trapping is a long-standing problem in electrowetting on dielectric, causing reliability reduction and restricting its practical applications. Although this phenomenon is investigated macroscopically, the microscopic investigations are still lacking. In this work, the trapped charges are proven to be localized at the three-phase contact line (TPCL) region by using three detecting methods-local contact angle measurements, electrowetting (EW) probe, and Kelvin probe force microscopy. Moreover, it is demonstrated that this EW-assisted charge injection (EWCI) process can be utilized as a simple and low-cost method to deposit charges on fluoropolymer surfaces. Charge densities near the TPCL up to 0.46 mC m^-2 and line widths of the deposited charge ranging from 20 to 300 µm are achieved by the proposed EWCI method. Particularly, negative charge densities do not degrade even after a "harsh" testing with a water droplet on top of the sample surfaces for 12 h, as well as after being treated by water vapor for 3 h. These findings provide an approach for applications which desire stable and controllable surface charges.

Understanding molecular surface doping of large bandgap organic semiconductors and overcoming the contact/access resistance in organic field-effect transistors

The contact resistance (Rc) and the effective carrier mobility (μeff) are considered as the important indicators of the performance of organic field-effect transistors (OFETs). Conventionally, the contact resistance is regarded as the interface effect between the metal electrodes and the organic semiconductors, while the carrier mobility is correlated to the crystallinity and π-π stacking of the organic molecules. In the staggered OFETs, Rc is actually closely correlated to μeff through the channel sheet resistance. Besides, the accuracy of the carrier mobility directly extracted from the non-ideal transfer curves with significant contact effect is always questionable. Herein, a diffusion-lead surface doping approach is employed to improve the contact resistance and mobility issues simultaneously. By suppressing the trap states in the sublimated 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) organic semiconductor with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), we observed a 3-fold increase in the carrier mobility from 0.5 to 1.6 cm2 V-1 s-1, and the Rc also drops remarkably from 25.7 kΩ cm to 5.2 kΩ cm. Moreover, the threshold voltage (VTH), subthreshold swing (SS) and the bias stability of the OFETs are also significantly improved. Based on the detailed characterization of the C8-BTBT film upon surface doping, including X-ray diffraction (XRD) for the film crystallinity, Kelvin probe force microscopy (KPFM) for the surface potential, trap state investigation by density of states (DOS) measurement and electrical circuit modeling for partial doping analysis, we confirmed that the spontaneous charge transfer process due to the diffusion of the F4-TCNQ dopants in the C8-BTBT matrix can lead to an effective trap filling. This technique and findings can be potentially developed into a general approach for the improvement of different performance parameters of OFETs.

A Large Anisotropic Enhancement of the Charge Carrier Mobility of Flexible Organic Transistors with Strain: A Hall Effect and Raman Study

Utilizing the intrinsic mobility-strain relationship in semiconductors is critical for enabling strain engineering applications in high-performance flexible electronics. Here, measurements of Hall effect and Raman spectra of an organic semiconductor as a function of uniaxial mechanical strain are reported. This study reveals a very strong, anisotropic, and reversible modulation of the intrinsic (trap-free) charge carrier mobility of single-crystal rubrene transistors with strain, showing that the effective mobility of organic circuits can be enhanced by up to 100% with only 1% of compressive strain. Consistently, Raman spectroscopy reveals a systematic shift of the low-frequency Raman modes of rubrene to higher (lower) frequencies with compressive (tensile) strain, which is indicative of a reduction (enhancement) of thermal molecular disorder in the crystal with strain. This study lays the foundation of the strain engineering in organic electronics and advances the knowledge of the relationship between the carrier mobility, low-frequency vibrational modes, strain, and molecular disorder in organic semiconductors.

High-performance, semiconducting membrane composed of ultrathin, single-crystal organic semiconductors

Organic thin film transistors (OTFTs) are promising building blocks in next-generation electronic devices due to the compatibility with the solution process of organic semiconductors (OSCs). Generally, OTFT processes inevitably face the serious issue that the available substrates are limited to those that are solution-process compatible. In a striking contrast to conventional OTFT fabrication processes, we successfully demonstrate simple water exfoliation together with a transfer method for solution-processed organic single-crystal semiconductors. An ideal single-crystalline form can be maintained during the process, which results in excellent electronic performance. The methodology presented in this study allows the ideal production of OTFTs on a wide range of destination substrates with sufficient scalability and expands the possibility for OSCs to be employed in printed electronic devices.

Thin film transistors (TFTs) are indispensable building blocks in any electronic device and play vital roles in switching, processing, and transmitting electronic information. TFT fabrication processes inherently require the sequential deposition of metal, semiconductor, and dielectric layers and so on, which makes it difficult to achieve reliable production of highly integrated devices. The integration issues are more apparent in organic TFTs (OTFTs), particularly for solution-processed organic semiconductors due to limits on which underlayers are compatible with the printing technologies. We demonstrate a ground-breaking methodology to integrate an active, semiconducting layer of OTFTs. In this method, a solution-processed, semiconducting membrane composed of few-molecular-layer–thick single-crystal organic semiconductors is exfoliated by water as a self-standing ultrathin membrane on the water surface and then transferred directly to any given underlayer. The ultrathin, semiconducting membrane preserves its original single crystallinity, resulting in excellent electronic properties with a high mobility up to 12 cm2⋅V−1⋅s−1. The ability to achieve transfer of wafer-scale single crystals with almost no deterioration of electrical properties means the present method is scalable. The demonstrations in this study show that the present transfer method can revolutionize printed electronics and constitute a key step forward in TFT fabrication processes.

Molecularly Thin Electrolyte for All Solid-State Nonvolatile Two-Dimensional Crystal Memory

A molecularly thin electrolyte is developed to demonstrate a nonvolatile, solid-state, one-transistor (1T) memory based on an electric-double-layer (EDL) gated WSe₂ field-effect transistor (FET). The custom-designed monolayer electrolyte consists of cobalt crown ether phthalocyanine and lithium ions, which are positioned by field-effect at either the surface of the WSe₂ channel or an h-BN capping layer to achieve "1" or "0", respectively. Bistability in the monolayer electrolyte memory is significantly improved by the h-BN cap with density functional theory (DFT) calculations showing enhanced trapping of Li⁺ near h-BN due to a ∼1.34 eV increase in the absolute value of the adsorption energy compared to vacuum. The threshold voltage shift between the two states corresponds to a change in charge density of ∼2.5 × 10¹² cm^-2, and an On/Off ratio exceeding 10⁴ at a back gate voltage of 0 V. The On/Off ratio remains stable after 1000 cycles and the retention time for each state exceeds 6 h (max measured). When the write time approaches 1 ms, the On/Off ratio remains >10², showing that the monolayer electrolyte-gated FET can respond on time scales similar to existing flash memory. The data suggest that faster switching times and lower switching voltages could be feasible by top gating.

A Simple Structure Conjugated Polymer for High Mobility Organic Thin Film Transistors Processed from Nonchlorinated Solvent

Herein, a simple structure, nonchlorinated solvent processable high mobility donor-acceptor conjugated polymer, poly(2,5-bis(4-hexyldodecyl)-2,5-dihydro-3,6-di-2-thienyl-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-thiophene) (PDPPT3-HDO), is reported. The enhanced solubility in nonchlorinated solvent is realized based on a denser alkyl side chains strategy by incorporating small size comonomer thiophene. An associated benefit of thiophene comonomer is the remarkable structural simplicity of the resulting polymer, which is advantageous for industrial scaling up. The alkyl side chain density and structure of PDPPT3-HDO can efficiently control the self-assembly properties in solution and film. By bar coating from o-xylene solution, PDPPT3-HDO forms aligned films and exhibits high hole mobility of up to 9.24 cm2 V-1 s-1 in organic thin film transistors (OTFTs). Notably, the bar-coated OTFT based on PDPPT3-HDO shows a close to ideal transistor model and a high mobility reliability factor of 87%. The multiple benefits of increased side chain density strategy may encourage the design of high mobility polymers that meet the requirements of mass production of OTFT materials and devices.

Programmed Design of Highly Crystalline Organic Semiconductor Patterns with Uniaxial Alignment via Blade Coating for High-Performance Organic Field-Effect Transistors

A solution-printing technique that enables the patterning and aligning of organic semiconducting crystals is necessary for their practical application. Here, we report the facile growth of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) semiconducting crystal patterns via a novel blade-coating technique. Defining low/high shearing-speed regions alternatively in a programmed manner enables the growth of TIPS-PEN crystals in low-speed regions and their patterning in high-speed regions. Various crystal-analysis tools, including polarized UV-vis absorption spectroscopy, grazing-incidence wide-angle X-ray scattering, and near-edge X-ray absorption fine structure, reveal that a crystal grown at an optimum shearing speed is highly oriented along the shearing direction with high crystallinity, and its molecules have a more edge-on orientation for efficient lateral-charge transport. As a result, organic field-effect transistors comprised of these crystals show a high field-effect mobility of up to 1.74 cm²/(V s). In addition, various crystal patterns can be created by simply changing the programming parameters, suggesting the broad utility of the crystal patterns and printing technique.

Scalable Fabrication of Organic Single-Crystalline Wafers for Reproducible TFT Arrays

Building on significant developments in materials science and printing technologies, organic semiconductors (OSCs) promise an ideal platform for the production of printed electronic circuits. However, whether their unique solution-processing capability can facilitate the reliable mass manufacture of integrated circuits with reasonable areal coverage, and to what extent mass production of solution-processed electronic devices would allow substantial reductions in manufacturing costs, remain controversial. In the present study, we successfully manufactured a 4-inch (c.a. 100 mm) organic single-crystalline wafer via a simple, one-shot printing technique, on which 1,600 organic transistors were integrated and characterized. Owing to their single-crystalline nature, we were able to verify remarkably high reliability and reproducibility, with mobilities up to 10 cm² V⁻¹ s⁻¹, a near-zero turn-on voltage, and excellent on-off ratio of approximately 10⁷. This work provides a critical milestone in printed electronics, enabling industry-level manufacturing of OSC devices concomitantly with lowered manufacturing costs.

Understanding of Fluorination Dependence on Electron Mobility and Stability of Naphthalenediimide-Based Polymer Transistors in Environment with 100% Relative Humidity

A family of copolymers (P(NDIOD-T2Fx)) based on naphthalenediimide (NDI) and 2,2'-bithiophene (T2) units with different amounts of 3,3'-difluoro-2,2'-bithiophene (T2F) decoration were synthesized, characterized, and used in n-type organic field-effect transistors (OFETs). With increasing T2F content in the backbone, we observe increased melting and crystallization transitions, blue-shifted absorptions, and deeper-lying highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) levels, together with improved hydrophobicity. The highest electron mobility of 4.48 × 10^-1 cm² V^-1 s^-1 was obtained for P(NDIOD-T2F0) without a T2F unit, which is attributed to the larger domain grains and crystallites, as well as a more tightly packed and oriented crystalline structure, as evidenced from the morphological study. In contrast, P(NDIOD-T2F100) with the highest T2F content has superior air stability, showing greater than 25% electron mobility retention after 30 days in wet conditions of 100% relative humidity without encapsulation. Even P(NDIOD-T2F100) is able to operate normally after 30 min of immersion in water, which is due to the synergistic contributions from the deep HOMO/LUMO levels and improved hydrophobicity. This study advances our fundamental understanding of how the morphology/crystallinity, device performance, and device stability of n-type copolymers are tuned by incorporating different concentrations of T2F in the backbone, shedding light on an important modification for air- and water-stable n-type materials for future OFET applications.

Ultrahigh-Mobility and Solution-Processed Inorganic P-Channel Thin-Film Transistors Based on a Transition-Metal Halide Semiconductor

The development of p-channel devices with comparable electrical performances to their n-channel counterparts has been delayed due to the lack of p-type semiconductor materials and device optimization. In this present work, we successfully demonstrated p-channel inorganic thin-film transistors (TFTs) with high hole mobilities similar to the values of n-channel devices. To boost the device performance, the solution-processed copper iodide (CuI) semiconductor was gated by a solid polymer electrolyte. The electrolyte gating could realize electrical double layer (EDL) formation and a three-dimensional carrier transport channel and thus substantially increased charge accumulation in the channel region and realized a high mobility above 90 cm²/(V s) (45.12 ± 22.19 cm²/(V s) on average). In addition, due to the high-capacitance EDL formed by electrolyte gating, the CuI TFTs exhibited a low operation voltage below 0.5 V (V_th = -0.045 V) and a high ON current level of 0.7 mA with an ON/OFF ratio of 1.52 × 10³. We also evaluated the operational stabilities of CuI TFTs and the devices showed 80% retention under electrical/mechanical stress. All the active layers of the transistors were fabricated by solution processes at low temperatures (<100 °C), indicating their potential use for flexible, wearable, and high-performance electronic applications.

Large-Area MXene Electrode Array for Flexible Electronics

MXenes, an emerging class of two-dimensional (2D) transition metal carbides and nitrides, have potential for application as high-performance, low-cost electrodes in organic field-effect transistors (OFETs) because of their water dispersibility, high conductivity, and work-function tunability. In this study, we successfully fabricated a large-scale, uniform Ti₃C₂T_x MXene electrode array on a flexible plastic substrate for application in high-performance OFETs. The work function of the Ti₃C₂T_x MXene electrodes was also effectively modulated via chemical doping with NH₃. The fabricated OFETs with Ti₃C₂T_x MXene electrodes exhibited excellent device performance, such as a maximum carrier mobility of ∼1 cm²·V^-1·s^-1 and an on-off current ratio of ∼10⁷ for both p-type and n-type OFETs, even though all the electrode and dielectric layers were fabricated on the plastic substrate by solution processing. Furthermore, MXene-electrode-based complementary logic circuits, such as NOT, NAND, and NOR, were fabricated via integration of p-type and n-type OFETs. The proposed approach is expected to expand the application range of MXenes to other OFET-based electronic devices, such as organic light-emitting displays and electronic skins.

Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field-Effect Transistors

Over the past three decades, the mobility of organic field-effect transistors (OFETs) has been improved from 10-5 up to over 10 cm2 V-1 s-1, which reaches or has already satisfied the requirements of demanding applications. However, pronounced nonideal behaviors in current-voltage characteristics are commonly observed, which indicates that the reported mobilities may not truly reflect the device properties. Herein, a comprehensive understanding of the origins of several observed nonidealities (downward, upward, double-slope, superlinear, and humped transfer characteristics) is summarized, and how to extract comparatively reliable mobilities from nonideal behaviors in OFETs is discussed. Combining an overview of the ideal and state-of-the-art OFETs, considerable possible approaches are also provided for future OFETs.

Fluorine-Substituted Dithienylbenzodiimide-Based n-Type Polymer Semiconductors for Organic Thin-Film Transistors

Imide functionalization is one of the most effective approaches to develop electron-deficient building blocks for constructing n-type organic semiconductors. Driven by the attractive properties of imide-functionalized dithienylbenzodiimide (TBDI) and the promising device performance of TBDI-based polymers, a novel acceptor with increased electron affinity, fluorinated dithienylbenzodiimide (TFBDI), was designed with the hydrogen replaced by fluorine on the benzene core, and the synthetic challenges associated with this highly electron-deficient fluorinated imide building block are successfully overcome. TFBDI showed suppressed frontier molecular orbital energy levels as compared with TBDI. Copolymerizing this new electron-withdrawing TBDI with various donor co-units afforded a series of n-type polymer semiconductors TFBDI-T, TFBDI-Se, and TFBDI-BSe. All these TFBDI-based polymers exhibited a lower-lying lowest unoccupied molecular orbital (LUMO) energy level than the polymer analogue without fluorine. When applied in organic thin-film transistors, three polymers showed unipolar electron transport with large on-current/off-current ratios (I_on/I_off) of 10⁵-10⁷. Among them, the selenophene-based polymer TFBDI-Se with the deepest-positioned LUMO and optimal chain stacking exhibited the highest electron mobility of 0.30 cm² V^-1 s^-1. This result demonstrates that the new TFBDI is a highly attractive electron-deficient unit for enabling n-type polymer semiconductors, and the fluorination of imide-functionalized arenes offers an effective approach to develop more electron-deficient building blocks in organic electronics.

Chasing the "Killer" Phonon Mode for the Rational Design of Low-Disorder, High-Mobility Molecular Semiconductors

Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high-mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the vibrational modes and the ensuing electron-phonon coupling constants are combined with experimental measurements of the low-frequency vibrations using inelastic neutron scattering and terahertz time-domain spectroscopy. In this way, the long-axis sliding motion is identified as a "killer" phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high-mobility molecular semiconductors is suggested.

Low-Voltage, High-Performance Flexible Organic Field-Effect Transistors Based on Ultrathin Single-Crystal Microribbons

Organic field-effect transistors (OFETs) have acquired increasing attention because of their wide range of potential applications in electronics; nevertheless, high operating voltage and low carrier mobility are considered as major bottlenecks in their commercialization. In this work, we demonstrate low-voltage, flexible OFETs based on ultrathin single-crystal microribbons. Flexible OFETs fabricated with 2,7-dioctylbenzothieno[3,2-b]benzothiophene (C8-BTBT) based solution-processed ultrathin single-crystal microribbon as the semiconductor layer and high-k polymer, polysiloxane-poly(vinyl alcohol) composite as an insulator layer manifest a significantly low operating voltage of -4 V, and several devices showed a high mobility of >30 cm² V^-1 s^-1. Besides, the carrier mobility of the fabricated devices exhibits a slight degradation in static bending condition, which can be retained by 83.3% compared with its original value under a bending radius of 9 mm. As compared to the bulk C8-BTBT single-crystal-based OFET, which showed a large crack only after 50 dynamic bending cycles, our ultrathin single-crystal-based counterpart demonstrates a much better dynamic force stability. Moreover, under a 20 mm bending radius, the mobility of the device decreased by only 11.7% even after 500 bending cycles and no further decrease was observed until 1000 bending cycles. Our findings reveal that ultrathin C8-BTBT single-crystal-based flexible OFETs are promising candidates for various high-performance flexible electronic devices.

On the Role of Contact Resistance and Electrode Modification in Organic Electrochemical Transistors

Contact resistance is renowned for its unfavorable impact on transistor performance. Despite its notoriety, the nature of contact resistance in organic electrochemical transistors (OECTs) remains unclear. Here, by investigating the role of contact resistance in n-type OECTs, the first demonstration of source/drain-electrode surface modification for achieving state-of-the-art n-type OECTs is reported. Specifically, thiol-based self-assembled monolayers (SAMs), 4-methylbenzenethiol (MBT) and pentafluorobenzenethiol (PFBT), are used to investigate contact resistance in n-type accumulation-mode OECTs made from the hydrophilic copolymer P-90, where the deliberate functionalization of the gold source/drain electrodes decreases and increases the energetic mismatch at the electrode/semiconductor interface, respectively. Although MBT treatment is found to increase the transconductance three-fold, contact resistance is not found to be the dominant factor governing OECT performance. Additional morphology and surface energy investigations show that increased performance comes from SAM-enhanced source/drain electrode surface energy, which improves wetting, semiconductor/metal interface quality, and semiconductor morphology at the electrode and channel. Overall, contact resistance in n-type OECTs is investigated, whilst identifying source/drain electrode treatment as a useful device engineering strategy for achieving state of the art n-type OECTs.

Quantum localization and delocalization of charge carriers in organic semiconducting crystals

Charge carrier transport in organic semiconductors is at the heart of many revolutionary technologies ranging from organic transistors, light-emitting diodes, flexible displays and photovoltaic cells. Yet, the nature of charge carriers and their transport mechanism in these materials is still unclear. Here we show that by solving the time-dependent electronic Schrödinger equation coupled to nuclear motion for eight organic molecular crystals, the excess charge carrier forms a polaron delocalized over up to 10-20 molecules in the most conductive crystals. The polaron propagates through the crystal by diffusive jumps over several lattice spacings at a time during which it expands more than twice its size. Computed values for polaron size and charge mobility are in excellent agreement with experimental estimates and correlate very well with the recently proposed transient localization theory.

All-Perovskite Photodetector with Fast Response

Perovskites have attracted substantial attention on account of their excellent physical properties and simple preparation process. Here we demonstrated an improved photodetector based on solution-processing organic-inorganic hybrid perovskite CH3NH3PbI3-xClx layer decorated with CsPbBr3 perovskite quantum dots. The CH3NH3PbI3-xClx-CsPbBr3 photodetector was operated in a visible light region, which appeared high responsivity (R = 0.39 A/W), detectivity (D* = 5.43 × 109 Jones), carrier mobility (μp = 172 cm2 V-1 s-1 and μn = 216 cm2 V-1 s-1), and fast response (rise time 121 μs and fall time 107 μs). The CH3NH3PbI3-xClx-CsPbBr3 heterostructure is anticipated to find comprehensive applications in future high-performance photoelectronic devices.

Mitigating Meniscus Instabilities in Solution-Sheared Polymer Films for Organic Field-Effect Transistors

Semiconducting donor-acceptor copolymers are considered to be a promising material class for solution-coated, large-scale organic electronic applications. A large number of works have shown that the best-performing organic field-effect transistors (OFETs) are obtained on low-surface-energy substrates. The meniscus instabilities that occur when coating on such surfaces considerably limit the effective deposition speeds. This represents a limiting factor for the upscaling of device fabrication for mass production, an issue that needs to be addressed if organic electronic devices are ever to become commercially relevant. In this work, we present a method to increase the accessible window of coating speeds for the solution shearing of donor-acceptor semiconductor polymers for the fabrication of OFETs. By incorporating a piezo crystal that is capable of producing high-frequency vibrations into the coating head, we are able to mitigate contact line instabilities due to the depinning of the contact line, thereby suppressing the commonly encountered "stick-and-slip" phenomenon.

Spontaneous Generation of a Molecular Thin Hydrophobic Skin Layer on a Sub-20 nm, High-k Polymer Dielectric for Extremely Stable Organic Thin-Film Transistor Operation

Polymer dielectric materials with hydroxyl functionalities such as poly(4-vinylphenol) and poly(vinyl alcohol) have been utilized widely in organic thin-film transistors (OTFTs) because of their excellent insulating performance gained by hydroxyl-mediated cross-linking. However, the polar hydroxyl functionality also deleteriously affects the performance of OTFTs and significantly impairs the device stability. In this study, a sub-20 nm, high-k copolymer dielectric with hydroxyl functionality, poly(2-hydroxyethyl acrylate-co-di(ethylene glycol) divinyl ether), was synthesized in the vapor phase via initiated chemical vapor deposition. The inherently dry environment offered by the vapor-phase polymer synthesis prompted the snuggling of polar hydroxyl functionalities into the bulk polymer film to form a molecular thin hydrophobic skin layer at its surface, verified by near-edge X-ray absorption fine structure analysis. The chemical composition of the copolymer dielectric was optimized systematically to achieve high dielectric constant (k ≈ 6.2) as well as extremely low leakage current densities (less than 3 × 10^-8 A/cm² in the range of ±2 MV/cm) even with sub-20 nm thickness, leading to one of the highest capacitance (higher than 300 nF/cm²) achieved by a single polymer dielectric to date. Exploiting the structural advantage of the cross-linked high-k polymer dielectric, high-performance OTFTs were obtained. Notably, the spontaneously formed molecular thin, hydrophobic skin layer in the copolymer film substantially suppressed the hysteresis in the transistor operation. The trap analysis also suggested the formation of bulk trap with a high energy barrier and sufficiently low trap densities at the semiconductor/dielectric interface, owing to the surface skin layer. Furthermore, the OTFTs with the -OH-containing copolymer dielectric showed an unprecedentedly excellent operational stability. No apparent OTFT degradation was observed up to 50 000 s of high constant voltage stress (corresponding to the applied electric field of 1.4 MV/cm) because of the markedly suppressed interfacial trap density by the hydrophobic skin layer, together with the current compensation by the bulk hydroxyl functionalities. We believe that the surface modification-free, one-step polymer dielectric synthetic strategy will provide a new insight into the design of polymer dielectric materials for high-performance, low-power soft electronic devices with high operational stability.