Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3

Unique Design Strategy for Dual Phase Transition That Successfully Validates Dual Switch Implementation in the Dielectric Material

Dual phase transition/switch materials are a critical cornerstone of information storage and sensing. However, they are difficult to design successfully, and compared with materials showing single-switchable phase transitions, the dual ones retain many challenges by far. Therefore, the significance of a general strategy is far greater than an accidental success. Here, an efficient strategy combining branchlike Et₃R and trunklike benzylamine analogues successfully validates dual-switch implementation in the dielectric materials. This inevitable success is based on our treelike analogue mentioned above in which amines with multiple branches can achieve a temperature-induced phase change. Exactly, (BCDA)₂ZnBr₄ [BCDA = benzyl-(2-chloroethyl)dimethylammonium] proves the regularity and undergoes two reversible phase transitions at 295.4 and 340.8 K, respectively. Variable-temperature single-crystal X-ray diffraction revealed that the generation of double phase transitions is caused by progressive changes of treelike BCDA⁺ as the temperature rises. Because the permittivity ε' of (BCDA)₂ZnBr₄ abruptly changed near the phase-transition temperatures, such physical properties make it have latent applicability. In short, the success of our strategy will inspire researches to discover more interesting dual phase transition/switch materials.

Enantiomorphic Perovskite Ferroelectrics with Circularly Polarized Luminescence

Materials with circularly polarized luminescence (CPL) activity have immense potential applications in molecular switches, optical sensors, information storage, asymmetric photosynthesis, 3D optical displays, biological probe, and spintronic devices. However, the achiral architectures of most of the luminophores severely limit their practical needs. Within this context, molecular ferroelectrics with striking chemical variability and structure-property flexibility bring light to the assembly of CPL-active ferroelectric materials. Herein, we report organic-inorganic perovskite enantiomorphic ferroelectrics, (R)- and (S)-3-(fluoropyrrolidinium)MnBr₃, undergoing a 222F2-type ferroelectric phase transition at 273 K. Their mirror relationships are verified by both single-crystal X-ray diffraction and vibrational circular dichroism (VCD). Furthermore, the corresponding Cotton effect for two chiral crystals was captured by mirror CPL activity. This may be assigned to the inducing interaction between the achiral luminescent perovskite framework and chiral organic components. As far as we know, this is the first molecular ferroelectric with CPL activity. Accordingly, this will inspire intriguing research in molecular ferroelectrics with CPL activity and holds great potential for the development of new optoelectronic devices.

A Three-Dimensional Lead Halide Perovskite-Related Ferroelectric

Three-dimensional (3D) organic-inorganic lead halides represented by [CH₃NH₃]PbI₃ perovskite have attracted great interest for their diverse functional properties and promising optoelectronic applications. However, 3D lead halides are still very rare and their ferroelectricity remains controversial. Here, we report an unprecedented 3D lead halide perovskite-related ferroelectric [2-trimethylammonioethylammonium]Pb₂Cl₆ ([TMAEA]Pb₂Cl₆), which contains a 3D lead chloride framework of corner- and edge-sharing PbCl₆ octahedral, with the [TMAEA]⁺ cations occupying the voids of the framework. [TMAEA]Pb₂Cl₆ shows a ferroelectric-to-paraelectric phase transition with the Curie temperature as high as 412 K, a typical ferroelectric hysteresis loop at 293 K with a spontaneous polarization of 1 μC/cm², and a clear ferroelectric domain switching. To the best of our knowledge, [TMAEA]Pb₂Cl₆ is the first 3D lead halide showing such an excellent ferroelectricity. Additionally, it also exhibits a semiconducting property with a direct band gap of 3.43 eV. This finding enriches the family of 3D hybrid lead halides and inspires the exploration of 3D lead halide ferroelectrics.

Ferroelectric-Semiconductor Solar Cells: An Alternative Configuration With High-Efficiency

The power generation of conventional solar cells suffers from their low open-circuit voltages that are restricted by the bandgap of employed semiconductors. We propose a novel photovoltaic cell based on the combination of ferroelectric materials and conventional semiconductors to overcome this restriction. In the proposed configuration, a semiconductor slab sandwiched between two parallel polarized ferroelectric materials attains an electric field parallel to the interfaces leading to an above-bandgap voltage across the semiconductor. Furthermore, the configuration allows the charge carriers produced in the semiconductor to be transported within the semiconductor to the contacts without having to cross the semiconductor-ferroelectric interface. The power generation is expected to be higher than those of conventional solar cells and previously studied combined designs: (i) Firstly because its open-circuit voltage can be much higher, as it is not restricted by the bandgap of the semiconductor material; (ii) secondly because certain unfavorable carrier transport processes, such as carrier tunneling through the interface and carrier transport through the low-mobility ferroelectric material, are not part of the circuit.

Polar columnar assemblies of subphthalocyanines

In this small review article, we provide an overview of the different self-assembled systems and materials created so far by rationally organizing fluorosubphthalocyanines in a non-centrosymmetric fashion, which allows access to novel polarly ordered liquid crystalline materials that can be aligned in the presence of electric fields and that exhibit permanent or switchable ([Formula: see text] ferroelectric) polarization.

Enhanced photovoltaic response of lead-free ferroelectric solar cells based on (K,Bi)(Nb,Yb)O3 films

Herein, we firstly present the (K,Bi)(Nb,Yb)O₃ inorganic ferroelectric photovoltaic (FPV) film, in which a nearly ideal bandgap of ∼1.45 eV in the center of the solar spectrum and the co-existence of oxygen vacancies as well as ferroelectric polarization were confirmed. Furthermore, a novel cell structure is successfully fabricated by combining charge-transporting TiO₂ nanoparticles, the perovskite sensitizer and a light-absorbing oxide hole p-type NiO conductor to realize a 1 V open circuit voltage, which can be increased to 1.56 V by adjusting the test bias near the coercive voltage. Additionally, under simulated standard AM 1.5G illumination, a fill factor of 86% and a power conversion efficiency of 0.85% are achieved via oxygen vacancy electromigration and polarization switching modulation. It is shown that the obtained power conversion efficiency is one to three orders of magnitude higher than those of pure BiFeO₃ and Pb(Zr,Ti)O₃. The enhanced PV effects are well elucidated using the transformation from a Schottky-like barrier to Ohmic contacts caused by polarization switching and oxygen vacancies. Building upon the above studies, deep insights into the bandgap tunability and PV effects in ferroelectric films with high oxygen vacancy concentration are provided and will facilitate a new versatile route for exploring high PV performance based on inorganic ferroelectric films.

Cubic NaSbS2 as an Ionic-Electronic Coupled Semiconductor for Switchable Photovoltaic and Neuromorphic Device Applications

The recent emergence of lead halide perovskites as ionic-electronic coupled semiconductors motivates the investigation of alternative solution-processable materials with similar modulatable ionic and electronic transport properties. Here, a novel semiconductor-cubic NaSbS₂ -for ionic-electronic coupled transport is investigated through a combined theoretical and experimental approach. The material exhibits mixed ionic-electronic conductivity in inert atmosphere and superionic conductivity in humid air. It is shown that post deposition electronic reconfigurability in this material enabled by an electric field induces ionic segregation enabling a switchable photovoltaic effect. Utilizing post-perturbation of the ionic composition of the material via electrical biasing and persistent photoconductivity, multistate memristive synapses with higher-order weight modulations are realized for neuromorphic computing, opening up novel applications with such ionic-electronic coupled materials.

Internal-Field-Enhanced Charge Separation in a Single-Domain Ferroelectric PbTiO3 Photocatalyst

Ferroelectric materials with spontaneous polarization-induced internal electric fields have drawn increasing attention in solar fuel production due to the intrinsic polarized structure. However, the origination of charge separation in these materials at the nano/microlevel is ambiguous owing to the complexity of the multielectric fields. Besides, the observed charge separation ability is far from theoretical expectation. Herein, by spatially resolved surface photovoltage spectroscopy, it is clearly demonstrated that the depolarization field in single-domain ferroelectric PbTiO₃ (PTO) nanoplates is the main driving force for charge separation and it can effectively drive photogenerated electrons and holes to the positive and negative polarization facets, respectively. Moreover, the charge separation ability of PTO nanoplates increases with increasing particle size along the polarization direction, due to the increasing potential difference between the opposite polarization facets. Furthermore, this driving force for charge separation directly contributes to the enhancement of the photocatalytic hydrogen evolution reaction activity in ferroelectrics. Finally, it is proved that the screening field compensates part of the depolarization field and can be diminished by adding a dielectric layer on the ferroelectric surface. These findings demonstrate the importance of increasing the depolarization field and decreasing the screening field for efficient charge separation in ferroelectric semiconductor photocatalysts.

Mechanical writing of in-plane ferroelectric vortices by tip-force and their coupled chirality

Recent experiments have demonstrated the existence of vortex or flux-closure domains in ferroelectric nanostructures, which are attractive to develop high-density data storage and novel configurable electronic devices. However, it remains challenging to stabilize in-plane vortex or flux-closure domains in ferroelectric film for the absence of a lateral geometry confinement. Based on a 3D phase field model, here we show that stabilization of isolated or interacting in-plane vortices in ferroelectric film can be achieved via applying a mechanical tip-force. The formation of such dipole vortices is caused by a conjoint effect of the tip-force-induced depolarization effect and in-plane strain. The effects of factors like film thickness, misfit strain, tip force and temperature on the vortex formation are systematically revealed and summarized as phase diagrams. The interaction between tip-induced vortices is also investigated. It is found that as the two tips get closer than the critical distance, the two initially isolated vortices become coupled, with identical or opposite chirality, depending on the distance between the two tips. A maximum data storage density of isolated in-plane vortices in ferroelectric thin film is estimated to be ~1 Tb in^-2. Our work thus demonstrates a mechanical strategy to stabilize dipole vortices, and provides a comprehensive insight into the characteristics of ferroelectric film under a mechanical tip force.

Progress in BiFeO3-based heterostructures: materials, properties and applications

BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.

Multiferroics beyond electric-field control of magnetism

Multiferroic materials, with their combined and coupled magnetism and ferroelectricity, provide a playground for studying new physics and chemistry as well as a platform for the development of novel devices and technologies. Based on my July 2017 Royal Society Inaugural Lecture, I review recent progress and propose future directions in the fundamentals and applications of multiferroics, with a focus on initially unanticipated developments outside of the core activity of electric-field control of magnetism.

Trilayered Lead Chloride Perovskite Ferroelectric Affording Self-Powered Visible-Blind Ultraviolet Photodetection with Large Zero-Bias Photocurrent

Perovskite ferroelectrics, in which the spontaneous polarization (P_s) is conducive to the separation of photoexcited charge carriers, have shown great potential for self-powered photodetection. Nevertheless, such self-powered ferroelectric photodetectors are mostly dominated by traditional inorganic oxides and exhibit relatively small zero-bias photocurrent, which limit their further application. Herein, we present a wide-bandgap 2D trilayered lead chloride hybrid perovskite ferroelectric, EA₄Pb₃Cl₁₀ (1, EA = ethylammonium), which shows a notable P_s of ∼4.5 μC/cm² and a high Curie temperature (415 K) beyond that of BaTiO₃ (393 K). Significantly, benefiting from the wide bandgap of 3.39 eV, a self-powered visible-blind ultraviolet (UV) photodetector has been successfully realized, with a zero-bias photocurrent as high as 18.6 μA/cm², which is nearly 2 orders of magnitude larger than those of mostly conventional inorganic ferroelectrics. As a pioneering study, this work offers an efficient approach for exploring wide-bandgap perovskite ferroelectrics and will excavate their application in the field of self-powered visible-blind UV photodetection.

Ti3C2-MXene/Bismuth Ferrite Nanohybrids for Efficient Degradation of Organic Dyes and Colorless Pollutants

The current environmental and potable water crisis requires technological advancement to tackle the issues caused by different organic pollutants. Herein, we report the degradation of organic pollutants such as Congo Red and acetophenone from aqueous media using visible light irradiation. To harvest the solar energy for photocatalysis, we fabricated a nanohybrid system composed of bismuth ferrite nanoparticles with two-dimensional (2D) MXene sheets, namely, the BiFeO3 (BFO)/Ti3C2 (MXene) nanohybrid, for enhanced photocatalytic activity. The hybrid BFO/MXene is fabricated using a simple and low-cost double-solvent solvothermal method. The SEM and TEM images showed that the BFO nanoparticles are attached onto the surface of 2D MXene sheets. The photocatalytic degradation achieved by the hybrid is found to be 100% in 42 min for the organic dye (Congo Red) and 100% for the colorless aqueous pollutant (acetophenone) in 150 min. The BFO/MXene hybrid system exhibited a large surface area of 147 m2 g-1 measured via the Brunauer-Emmett-Teller sorption-desorption technique, which is found to be the largest among all BFO nanoparticles and derivatives. The photoluminescence spectra indicate a low electron-hole recombination rate. Fast and efficient degradation of organic molecules is caused by two factors: larger surface area and lower electron-hole recombination rate, which makes the BFO/MXene nanohybrid a highly efficient photocatalyst and a promising candidate for many future applications.

Real-time studies of ferroelectric domain switching: a review

Ferroelectric materials have been utilized in a broad range of electronic, optical, and electromechanical applications and hold the promise for the design of future high-density nonvolatile memories and multifunctional nano-devices. The applications of ferroelectric materials stem from the ability to switch polarized domains by applying an electric field, and therefore a fundamental understanding of the switching dynamics is critical for design of practical devices. In this review, we summarize the progress in the study of the microscopic process of ferroelectric domain switching using recently developed in situ transmission electron microscopy (TEM). We first briefly introduce the instrumentation, experimental procedures, imaging mechanisms, and analytical methods of the state-of-the-art in situ TEM techniques. The application of these techniques to studying a wide range of complex switching phenomena, including domain nucleation, domain wall motion, domain relaxation, domain-defect interaction, and the interplay between different types of domains, is demonstrated. The underlying physics of these dynamic processes are discussed.

Antiferroelectric to Antiferroelectric-Relaxor Phase Transition in Calcium Strontium Sulfoaluminate

Structural phase transitions of calcium strontium sulfoaluminate series, (Ca_1-xSr_x)₈[AlO₂]₁₂(SO₄)₂ ((CS)AS-x) with x = 0.80-1.00, are systematically investigated by powder X-ray diffraction, dielectric measurements, and pyroelectric measurements, to clarify a phase diagram of (CS)AS-x (x = 0.80-1.00). A pure strontium sulfoaluminate, (CS)AS-1.00, is found to undergo three phase transitions, which take place successively on cooling from a prototypical cubic phase with the symmetry of Im3̅m. Though the room-temperature phase of (CS)AS-1.00 was previously reported to be of polar Pcc2, the pyroelectric measurements clarified a nonpolar character of the crystal symmetry. The dielectric measurements suggest a possibility of an antiferroelectric ground state of (CS)AS-x in the Sr-rich compositions. As x decreases, the ground state changes to a short-range-ordered state, implying a unique phase transition from the antiferroelectric state to the antiferroelectric-relaxor state. The present study provides an intriguing playground for designing new ferro/antiferroelectric materials.

Ultra-wide temperature electronic synapses based on self-rectifying ferroelectric memristors

Memristors have been intensively studied in recent years as promising building blocks for next-generation nonvolatile memory, artificial neural networks and brain-inspired computing systems. However, most memristors cannot simultaneously function in extremely low and high temperatures, limiting their use for many harsh environment applications. Here, we demonstrate that the memristors based on high-Curie temperature ferroelectrics can resolve these issues. Excellent synaptic learning and memory functions can be achieved in BiFeO₃ (BFO)-based ferroelectric memristors in an ultra-wide temperature range. Correlation between electronic transport and ferroelectric properties is established by the coincidence of resistance and ferroelectricity switch and the direct visualization of local current and domain distributions. The interfacial barrier modification by the reversal of ferroelectric polarization leads to a robust resistance switching behavior. Various synaptic functions including long-term potentiation/depression, consecutive potentiation/depression and spike-timing dependent plasticity have been realized in the BFO ferroelectric memristors over an extremely wide temperature range of -170 °C ∼ 300 °C, which even can be extended to 500 °C due to the robust ferroelectricity of BFO at high temperatures. Our findings illustrate that the BFO ferroelectric memristors are promising candidates for ultra-wide temperature electronic synapse in extreme or harsh environments.

Vertical ferroelectric switching by in-plane sliding of two-dimensional bilayer WTe2

Based on first-principles calculations, we studied the ferroelectric properties of bilayer 1T'-WTe₂. In this work, we discovered that the polarization stems from uncompensated out-of-plane interlayer charge transfer, which can be switched upon interlayer sliding of an in-plane translation. Our differential charge density results also confirmed that such ferroelectricity in the bilayer WTe₂ is derived from interlayer charge transfer. The ferroelectric polarization directions further control the spin texture of the bilayer WTe₂, which may have important applications in spintronics. Therefore, we propose a spin field effect transistor (spin-FET) design that may effectively improve the spin-polarized injection rate. In addition, the lattice strain has been found to have an important influence on the ferroelectric properties of the bilayer WTe₂. One can effectively increase the polarization with a maximum at 3% tensile strain, whereas a 3% compressive strain can transform the bilayer WTe₂ from the ferroelectric to paraelectric phase.

Low value for the static background dielectric constant in epitaxial PZT thin films

Ferroelectrics are intensively studied materials due to their unique properties with high potential for applications. Despite all efforts devoted to obtain the values of ferroelectric material constants, the problem of the magnitude of static dielectric constant remains unsolved. In this article it is shown that the value of the static dielectric constant at zero electric field and with negligible contribution from the ferroelectric polarization (also called static background dielectric constant, or just background dielectric constant) can be very low (between 10 and 15), possibly converging towards the value in the optical domain. It is also found that the natural state of an ideal, mono-domain, epitaxial ferroelectric is that of full depletion with constant capacitance at voltages outside the switching domain. The findings are based on experimental results obtained from a new custom method designed to measure the capacitance-voltage characteristic in static conditions, as well from Rayleigh analysis. These results have important implications in future analysis of conduction mechanisms in ferroelectrics and theoretical modeling of ferroelectric-based devices.

Mutual Insight on Ferroelectrics and Hybrid Halide Perovskites: A Platform for Future Multifunctional Energy Conversion

An insight into the analogies, state-of-the-art technologies, concepts, and prospects under the umbrella of perovskite materials (both inorganic-organic hybrid halide perovskites and ferroelectric perovskites) for future multifunctional energy conversion and storage devices is provided. Often, these are considered entirely different branches of research; however, considering them simultaneously and holistically can provide several new opportunities. Recent advancements have highlighted the potential of hybrid perovskites for high-efficiency solar cells. The intrinsic polar properties of these materials, including the potential for ferroelectricity, provide additional possibilities for simultaneously exploiting several energy conversion mechanisms such as the piezoelectric, pyroelectric, and thermoelectric effect and electrical energy storage. The presence of these phenomena can support the performance of perovskite solar cells. The energy conversion using these effects (piezo-, pyro-, and thermoelectric effect) can also be enhanced by a change in the light intensity. Thus, there lies a range of possibilities for tuning the structural, electronic, optical, and magnetic properties of perovskites to simultaneously harvest energy using more than one mechanism to realize an improved efficiency. This requires a basic understanding of concepts, mechanisms, corresponding material properties, and the underlying physics involved with these effects.

Domain and Switching Control of the Bulk Photovoltaic Effect in Epitaxial BiFeO3 Thin Films

Absence of inversion symmetry is the underlying origin of ferroelectricity, piezoelectricity, and the bulk photovoltaic (BPV) effect, as a result of which they are inextricably linked. However, till now, only the piezoelectric effects (inverse) have been commonly utilized for probing ferroelectric characteristics such as domain arrangements and resultant polarization orientation. The bulk photovoltaic effect, despite sharing same relation with the symmetry as piezoelectricity, has been mostly perceived as an outcome of ferroelectricity and not as a possible analytical method. In this work, we investigate the development of BPV characteristics, i.e. amplitude and angular dependency of short-circuit current, as the ferroelastic domain arrangement is varied by applying electric fields in planar devices of BiFeO₃ films. A rather sensitive co-dependency was observed from measurements on sample with ordered and disordered domain arrangements. Analysis of the photovoltaic response manifested in a mathematical model to estimate the proportion of switched and un-switched regions. The results unravel the potential utility of BPV effect to trace the orientation of the polarization vectors (direction and amplitude) in areas much larger than that can be accommodated in probe-based techniques.

Pulse-Driven Nonvolatile Perovskite Memory with Photovoltaic Read-Out Characteristics

This paper presents a unique GdFe_0.8Ni_0.2O₃ perovskite thin film for use in pulse-controlled nonvolatile memory devices (combined with a SrTiO₃ (STO) substrate) without the need for an electrical-stressing read-out process. The use of pulse voltage imposes permanent downward/upward polarization states on GFNO, which enables greater energy density and higher energy efficiency than the unpoled state for memory. The two polarization states produce carrier migrations in opposing directions across the GFNO/STO interface, which alter the depletion region of the device, as reflected in photovoltaic short-circuit current density (J_sc) values. Modulating the duration (varying the number of sequential pulses but fixing the pulse width and delay time) and direction of continuous pulse voltage is an effective method for controlling J_sc, thereby allowing the fabrication of nondestructive, light-tunable, nonvolatile memory devices. In experiments, J_sc in the downward polarized state was approximately 6 times greater than that in the upward polarized state. It is promising that more memory states can be enabled by the proposed heterostructure by selecting appropriate pulse trains. Real-time interfacial changes (relative to the nonvolatile characteristics of the device) were obtained by applying synchrotron X-ray techniques simultaneously with pulse characterization. This made it possible to separately probe the electronic and chemical states of the GFNO (a p-type-like semiconductor) and STO (an n-type-like semiconductor) while varying the pulse direction, thereby making it possible to identify the mechanisms underlying the observed phenomena.

Polarization-Driven Self-Powered Photodetection in a Single-Phase Biaxial Hybrid Perovskite Ferroelectric

Self-powered photodetection driven by ferroelectric polarization has shown great potential in next-generation optoelectronic devices. Hybrid perovskite ferroelectrics that combine polarization and semiconducting properties have a promising position within this portfolio. Herein, we demonstrate the realization of self-powered photodetection in a new developed biaxial ferroelectric, (EA)₂ (MA)₂ Pb₃ Br₁₀ (1, EA is ethylammonium and MA is methylammonium), which displays high Curie temperature (375 K), superior spontaneous polarization (3.7 μC cm^-2 ), and unique semiconducting nature. Strikingly, without an external energy supply, 1 exhibits an direction-selectable photocurrent with fascinating attributes including high photocurrent density (≈4.1 μA cm^-2 ), high on/off switching ratio (over 10⁶ ), and ultrafast response time (96/123 μs); such merits are superior to those of the most active ferroelectric oxide BiFeO₃ . Further studies reveal that strong inversion symmetry breaking in 1 provides a desirable driving force for carrier separation, accounting for such electrically tunable self-powered photoactive behaviors. This work sheds light on exploring new multifunctional hybrid perovskites and advancing the design of intelligent photoelectric devices.

Switchable magnetic bulk photovoltaic effect in the two-dimensional magnet CrI3

The bulk photovoltaic effect (BPVE) rectifies light into the dc current in a single-phase material and attracts the interest to design high-efficiency solar cells beyond the pn junction paradigm. Because it is a hot electron effect, the BPVE surpasses the thermodynamic Shockley-Queisser limit to generate above-band-gap photovoltage. While the guiding principle for BPVE materials is to break the crystal centrosymmetry, here we propose a magnetic photogalvanic effect (MPGE) that introduces the magnetism as a key ingredient and induces a giant BPVE. The MPGE emerges from the magnetism-induced asymmetry of the carrier velocity in the band structure. We demonstrate the MPGE in a layered magnetic insulator CrI3, with much larger photoconductivity than any previously reported results. The photocurrent can be reversed and switched by controllable magnetic transitions. Our work paves a pathway to search for magnetic photovoltaic materials and to design switchable devices combining magnetic, electronic, and optical functionalities.

Ferroelectricity-Enhanced Piezo-Phototronic Effect in 2D V-Doped ZnO Nanosheets

Emerging 2D electronic materials have shown great potential for regulating and controlling optoelectronic processes. A 2D ferroelectric semiconductor coupled with the piezo-phototronic effect may bring unprecedented functional characteristics. Here, a heterojunction photodetector made of p-Si/V-doped-ferroelectric-ZnO 2D nanosheets (FESZ-PD) is fabricated, and the ferroelectricity-enhanced piezo-phototronic effect on the photoresponse behavior of the FESZ-PD is carefully investigated. By introducing the ferroelectricity and the piezo-phototronic effect, improved current rectification performance is achieved and the photoresponse performance of the heterojunction is enhanced in a broad spectral range. The applied voltage bias during measurement naturally causes ferroelectric spontaneous polarizations to align, resulting in a change in band structure near the interface and the local piezo-phototronic effect. The modulated energy band promotes the generation, separation, and transportation efficiency of photogenerated carriers greatly. Compared with the Si/ZnO 2D nanosheets photodetector without ferroelectricity under strain-free conditions, the photoresponsivity R of the FESZ-PD increases by 2.4 times when applying a -0.20‰ compressive strain at +1 V forward bias. These results confirm the feasibility of coupling the ferroelectricity with the piezo-phototronic effect in 2D ferroelectric materials to enhance the photoresponse behavior, which provides a good way to enable the development of high-performance electronic and optoelectronic devices.

Resistive Switching Behavior in Ferroelectric Heterostructures

Resistive random-access memory (RRAM) is a promising candidate for next-generation nonvolatile random-access memory protocols. The information storage in RRAM is realized by the resistive switching (RS) effect. The RS behavior of ferroelectric heterostructures is mainly controlled by polarization-dominated and defect-dominated mechanisms. Under certain conditions, these two mechanisms can have synergistic effects on RS behavior. Therefore, RS performance can be effectively improved by optimizing ferroelectricity, conductivity, and interfacial structures. Many methods have been studied to improve the RS performance of ferroelectric heterostructures. Typical approaches include doping elements into the ferroelectric layer, controlling the oxygen vacancy concentration and optimizing the thickness of the ferroelectric layer, and constructing an insertion layer at the interface. Here, the mechanism of RS behavior in ferroelectric heterostructures is briefly introduced, and the methods used to improve RS performance in recent years are summarized. Finally, existing problems in this field are identified, and future development trends are highlighted.

Conduction mechanism and switchable photovoltaic effect in (1 1 1) oriented BiFe0.95Mn0.05O3 thin film

Epitaxial 200 nm BiFe_0.95Mn_0.05O₃ (BFO) film was grown by pulsed laser deposition (PLD) on (1 1 1) oriented SrTiO₃ substrate buffered with a 50 nm thick SrRuO₃ electrode. The BFO thin film shows a rhombohedral structure and a large remnant polarization of Pr  =  104 µC cm^-2. By comparing I(V) characteristics with different conduction models we reveal the presence of both bulk limited Poole-Frenkel and Schottky interface mechanisms and each one dominates in a specific range of temperature. At room temperature (RT) and under 10 mW laser illumination, the as grown BFO film presents short-circuit current density (J _sc) and open circuit voltage (V _oc) of 2.25 mA cm^-2 and  -0.55 V respectively. This PV effect can be switched by applying positive voltage pulses higher than the coercive field. For low temperatures a large V _oc value of about  -4.5 V (-225 kV cm^-1) is observed which suggests a bulk non-centrosymmetric origin of the PV response.

Manipulation of Oxygen Vacancy for High Photovoltaic Output in Bismuth Ferrite Films

Very recently, the ferroelectric photovoltaic property of bismuth ferrite (BiFeO₃, BFO) has attracted much attention. However, the physical mechanisms for its anomalous photovoltaic effect and switchable photovoltaic effect are still largely unclear. Herein, a novel design was proposed to realize a high photovoltaic output in BiFeO₃ films by manipulating its oxygen vacancy concentration through the alteration of the Bi content. Subsequent results and analysis manifested that the highest photovoltaic output was achieved in Bi_1.05FeO₃ films, differing 1000 times from that of Bi_0.95FeO₃ films. Simultaneously, the origin of photovoltaic effect in all BiFeO₃ films was suggested as the bulk photovoltaic mechanism instead of the Schottky effect. Moreover, oxygen vacancy migration should be the dominant factor determining the switchable photovoltaic effect rather than the ferroelectric polarization. A switchable Schottky-to-Ohmic interfacial contact model was proposed to illustrate the observed switchable photovoltaic or diodelike effect. Therefore, the present work may open a new way to realize the high power output and controllable photovoltaic switching behavior for the photovoltaic applications of BiFeO₃ compounds.

Perovskites with d-block metals for solar energy applications

Pb2+ halide organic-inorganic perovskites are excellent semiconductors for use in solar energy applications, but at the expense of robustness and environmental compatibility. Tin (Sn), which sits just above lead in the periodic table, forms pure (or mixed with lead) perovskites when at the 2+ or 4+ oxidation state. It can act as a promising alternative; however, there are still some serious concerns regarding its suitability. This presents a major challenge; viable metal cations have to be identified. A good number of elements, originating from a large range of d-block metal ions, with adequate oxidation states, moderate toxicity, and relative abundance, seem ideal for this purpose. In this review, we present the most characteristic perovskites (conventional perovskites, layered, or double perovskites) that can be formed with the help of these metals. We focus on d-block metal ions with stable oxidation states, such as Ag+ or Ti4+, which have exhibited satisfactory photovoltaic properties until now. Further, we highlight the results involving compounds other than halide perovskites, such as oxides, chalcogenides, and nitrides (as well as oxyhalides, oxysulfides, and oxynitrides); a few of them are ferroelectric (based on Ti4+, Zr4+, Fe3+, and Cr3+) and can yield a photovoltage that exceeds the bandgap of the material. Finally, we present the critical challenges that currently limit the efficiency of these systems and propose prospects for future directions.

Magnetoelectricity in multiferroics: a theoretical perspective

The key physical property of multiferroic materials is the existence of coupling between magnetism and polarization, i.e. magnetoelectricity. The origin and manifestations of magnetoelectricity can be very different in the available plethora of multiferroic systems, with multiple possible mechanisms hidden behind the phenomena. In this review, we describe the fundamental physics that causes magnetoelectricity from a theoretical viewpoint. The present review will focus on mainstream physical mechanisms in both single-phase multiferroics and magnetoelectric heterostructures. The most recent tendencies addressing possible new magnetoelectric mechanisms will also be briefly outlined.

Gate-Tunable and Multidirection-Switchable Memristive Phenomena in a Van Der Waals Ferroelectric

Memristive devices have been extensively demonstrated for applications in nonvolatile memory, computer logic, and biological synapses. Precise control of the conducting paths associated with the resistance switching in memristive devices is critical for optimizing their performances including ON/OFF ratios. Here, gate tunability and multidirectional switching can be implemented in memristors for modulating the conducting paths using hexagonal α-In₂ Se₃ , a semiconducting van der Waals ferroelectric material. The planar memristor based on in-plane (IP) polarization of α-In₂ Se₃ exhibits a pronounced switchable photocurrent, as well as gate tunability of the channel conductance, ferroelectric polarization, and resistance-switching ratio. The integration of vertical α-In₂ Se₃ memristors based on out-of-plane (OOP) polarization is demonstrated with a device density of 7.1 × 10⁹ in.^-2 and a resistance-switching ratio of well over 10³ . A multidirectionally operated α-In₂ Se₃ memristor is also proposed, enabling the control of the OOP (or IP) resistance state directly by an IP (or OOP) programming pulse, which has not been achieved in other reported memristors. The remarkable behavior and diverse functionalities of these ferroelectric α-In₂ Se₃ memristors suggest opportunities for future logic circuits and complex neuromorphic computing.

Fluorinated 2D Lead Iodide Perovskite Ferroelectrics

Hybrid perovskite materials are famous for their great application potential in photovoltaics and optoelectronics. Among them, lead-iodide-based perovskites receive great attention because of their good optical absorption ability and excellent electrical transport properties. Although many believe the ferroelectric photovoltaic effect (FEPV) plays a crucial role for the high conversion efficiency, the ferroelectricity in CH₃ NH₃ PbI₃ is still under debate, and obtaining ferroelectric lead iodide perovskites is still challenging. In order to avoid the randomness and blindness in the conventional method of searching for perovskite ferroelectrics, a design strategy of fluorine modification is developed. As a demonstration, a nonpolar lead iodide perovskite is modified and a new 2D fluorinated layered hybrid perovskite material of (4,4-difluorocyclohexylammonium)₂ PbI₄ , 1, is obtained, which possesses clear ferroelectricity with controllable spontaneous polarization. The direct bandgap of 2.38 eV with strong photoluminescence also guarantees the direct observation of polarization-induced FEPV. More importantly, the 2D structure and fluorination are also expected to achieve both good stability and charge transport properties. 1 is not only a 2D fluorinated lead iodide perovskite with confirmed ferroelectricity, but also a great platform for studying the effect of ferroelectricity and FEPV in the context of lead halide perovskite solar cells and other optoelectronic applications.

Photodegradation of 2,4-dichlorophenol and rhodamine B over n-type ZnO/p-type BiFeO3 heterojunctions: detailed reaction pathway and mechanism

The development of new technologies for efficient degradation of pollutant has been an increasing demand in the globe due to the serious environmental issues. Herein, we report n-type ZnO/p-type BiFeO₃ composites as highly efficient visible light nanophotocatalysts prepared via a wet chemical solution method. Based on the measurements of ^•OH-related fluorescence (FL) spectra, photoluminescence (PL) spectra, photoelectrochemical I-V curves, and electrochemical impedance spectra (EIS), it is demonstrated that the photo-induced charge carrier (electron-hole pairs) in the as-prepared n-type ZnO/p-type BiFeO₃ composites with proper amount of the coupled ZnO (10% by mass) exhibits high separation compared with the bare BiFeO₃ (BFO) nanoparticles. This is well responsible for the superior visible light photocatalytic performance of the composites for 2,4-dichlorophenol (2,4-DCP) and rhodamine B (RhB) degradation. It is confirmed by means of scavenger test and liquid chromatography-tandem mass spectrometry (LC/MS) analysis of the intermediate products that ^•OH is the pre-dominant oxidant involved in the degradation of 2,4-DCP. A detailed reaction pathway for 2,4-dichlorophenol degradation over the amount-optimized ZnO/BFO composite is proposed mainly based on the LC/MS product ions. This work will provide a feasible route to design and develop BFO-based highly efficient visible light-active photocatalysts for environmental purification and could be extended to other visible light-active semiconductor materials.

The Microstructure, Electric, Optical and Photovoltaic Properties of BiFeO3 Thin Films Prepared by Low Temperature Sol⁻Gel Method

Ferroelectrics have recently attracted attention as a candidate class of materials for use in photovoltaic devices due to their abnormal photovoltaic effect. However, the current reported efficiency is still low. Hence, it is urgent to develop narrow-band gap ferroelectric materials with strong ferroelectricity by low-temperature synthesis. In this paper, the perovskite bismuth ferrite BiFeO₃ (BFO) thin films were fabricated on SnO₂: F (FTO) substrates by the sol-gel method and they were rapidly annealed at 450, 500 and 550 °C, respectively. The microstructure and the chemical state's evolution with annealing temperature were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS), and the relationship between the microstructure and electric, optical and photovoltaic properties were studied. The XRD, SEM and Raman results show that a pure phase BFO film with good crystallinity is obtained at a low annealing temperature of 450 °C. As the annealing temperature increases, the film becomes more uniform and has an improved crystallinity. The XPS results show that the Fe³⁺/Fe²⁺ ratio increases and the ratio of oxygen vacancies/lattice oxygen decreases with increasing annealing temperature, which results in the leakage current gradually being reduced. The band gap is reduced from 2.68 to 2.51 eV due to better crystallinity. An enhanced photovoltaic effect is observed in a 550 °C annealed BFO film with a short circuit current of 4.58 mA/cm² and an open circuit voltage of 0.15 V, respectively.

Nonlinear photoresponse of type-II Weyl semimetals

The experimental manifestation of topological effects in bulk materials is attracting enormous research interest. However, direct experimental evidence of the effective k-space monopole of the Weyl nodes has so far been lacking. Here, signatures of the singular topology of the type-II Weyl semimetal TaIrTe₄ are revealed in the photoresponses, which are related to divergence of the Berry curvature. TaIrTe₄ exhibits a large photoresponsivity of 130.2 mA W^-1-with 4 μm excitation in an unbiased field-effect transistor at room temperature-arising from the third-order nonlinear optical response, approaching the performance of commercial low-temperature detectors. In addition, the circularly polarized galvanic response is enhanced at 4 μm, possibly due to the same Berry curvature singularity enhancement. Considering the optical selection rule of chiral Weyl cones, this may open the door for studying and controlling the chiral polarization of Weyl fermions with an electric field in addition to the optical helicities.

Tuning Photovoltaic Performance of Perovskite Nickelates Heterostructures by Changing the A-Site Rare-Earth Element

Perovskite rare-earth nickelates (RNiO₃) have attracted much attention because of their exotic physical properties and rich potential applications. Here, we report systematic tuning of the electronic structures of RNiO₃ (R = Nd, Sm, Gd, and Lu) by isovalent A-site substitution. By integrating RNiO₃ thin films with Nb-doped SrTiO₃ (NSTO), p-n heterojunction photovoltaic cells have been prepared and their performance has been investigated. The open-circuit voltage increases monotonically with decreasing A-site cation radius. This change results in a downward shift of the Fermi level and induces an increase in the built-in potential at the RNiO₃/NSTO heterojunction, with LuNiO₃/NSTO showing the largest open-circuit voltage. At the same time, the short-circuit current initially increases upon changing the A-site element from Nd to Sm. However, the larger bandgaps of GdNiO₃ and LuNiO₃ reduce light absorption which in turn induces a decrease in the short-circuit current. A power conversion efficiency of 1.13% has been achieved by inserting an ultrathin insulating SrTiO₃ layer at the SmNiO₃/NSTO interface. Our study illustrates how changing the A-site cation is an effective strategy for tuning photovoltaic performance and sheds light on which A-site element is the best for photovoltaic applications, which can significantly increase the applicability of nickelates in optoelectric devices.

Strain Effect on Oxygen Evolution Reaction Activity of Epitaxial NdNiO3 Thin Films

Epitaxial strain can cause both lattice distortion and oxygen nonstoichiometry, effects that are strongly coupled at heterojunctions of complex nickelate oxides. Here we decouple these structural and chemical effects on the oxygen evolution reaction (OER) by using a set of coherently strained epitaxial NdNiO₃ films. We show that within the regime where oxygen vacancies (V_O) are negligible, compressive strain is favorable for the OER whereas tensile strain is unfavorable; the former induces orbital splitting, resulting in a higher occupancy in the d_{3 z²- r²} orbital and weaker Ni-O chemisorption. However, when the tensile strain is sufficiently large to promote V_O formation, an increase in the OER is also observed. The partial reduction of Ni³⁺ to Ni²⁺ due to V_O makes the e_g occupancy slightly larger than unity, which is thought to account for the increased OER activity. Our work highlights that epitaxial-strain-induced lattice distortion and V_O generation can be individually or collectively exploited to tune OER activity, which is important for the predictive synthesis of high-performance electrocatalysts.

The First 2D Homochiral Lead Iodide Perovskite Ferroelectrics: [R- and S-1-(4-Chlorophenyl)ethylammonium]2 PbI4

2D organic-inorganic lead iodide perovskites have recently received tremendous attention as promising light absorbers for solar cells, due to their excellent optoelectronic properties, structural tunability, and environmental stability. However, although great efforts have been made, no 2D lead iodide perovskites have been discovered as ferroelectrics, in which the ferroelectricity may improve the photovoltaic performance. Here, by incorporating homochiral cations, 2D lead iodide perovskite ferroelectrics [R-1-(4-chlorophenyl)ethylammonium]₂ PbI₄ and [S-1-(4-chlorophenyl)ethylammonium]₂ PbI₄ are successfully obtained. The vibrational circular dichroism spectra and crystal structural analysis reveal their homochirality. They both crystalize in a polar space group P1 at room temperature, and undergo a 422F1 type ferroelectric phase transition with transition temperature as high as 483 and 473.2 K, respectively, showing a multiaxial ferroelectric nature. They also possess semiconductor characteristics with a direct bandgap of 2.34 eV. Nevertheless, their racemic analogue adopts a centrosymmetric space group P2₁ /c at room temperature, exhibiting no high-temperature phase transition. The homochirality in 2D lead iodide perovskites facilitates crystallization in polar space groups. This finding indicates an effective way to design high-performance 2D lead iodide perovskite ferroelectrics with great application prospects.

Formation of polarization needle-like domain and its unusual switching in compositionally graded ferroelectric thin films: an improved phase field model

Compositionally graded ferroelectrics (cgFEs), which possess a spatial variation in material composition, exhibit anomalous or even unprecedented properties. Despite several breakthroughs having been achieved in experiments, there surprisingly is a lack of an effective simulation approach for cgFEs, thereby greatly hindering a deep understanding about underlying mechanisms hidden behind the observed phenomena. In this study, an improved phase field model is proposed for a cgFE made of PbZr_(1-x)Ti _x O₃ based on the Ginzburg-Landau theory. The improved approach enables us to capture several key phenomena occurring in the cgFE PbZr_0.8Ti_0.2O₃ ⇔ PbZr_0.2Ti_0.8O₃ thin film that are observed from experiments, such as the formation of needle-like domains with curved domain walls, ferroelastic switching under an electric field, and the voltage offset of the hysteresis loop. Results obtained from the improved approach indicate that the high elastic energy near the needle-tip of an a-domain gives rise to a deflection of the domain wall from the regular a/c domain wall, while the high concentration of the depolarization field shrinks a part of the a-domain near the needle-tip and terminates the a-domain within the cgFE thin film. These facilitate the stabilization of needle-like domains with curved domain walls in the cgFE thin film. Furthermore, the flexoelectricity is proven to play an important role in the voltage offset of the hysteresis loop. On the other hand, the ferroelectric switching process in the cgFE thin film exhibits a vastly different response in comparison to that in homogeneous ferroelectric thin films, including local switching initiation and formation and annihilation of vortex-antivortex pairs during the switching. The present study, therefore, provides an incisive approach for investigations on cgFEs, which may bring new understanding and unique insights into these complex materials, as well as novel potential applications.

Advances in magnetoelectric multiferroics

The manipulation of magnetic properties by an electric field in magnetoelectric multiferroic materials has driven significant research activity, with the goal of realizing their transformative technological potential. Here, we review progress in the fundamental understanding and design of new multiferroic materials, advances in characterization and modelling tools to describe them, and the exploration of devices and applications. Focusing on the translation of the many scientific breakthroughs into technological innovations, we identify the key open questions in the field where targeted research activities could have maximum impact in transitioning scientific discoveries into real applications.

Dielectric Relaxation and Beyond Limiting Behavior of Alternating-Current Conductivity in a Supermolecular Ferroelectric

A cyclen-based hybrid supermolecule crystal, [(FeCl₂ )(cyclen)]Cl (1), where cyclen=1,4,7,10-tetraazacyclododecane, was prepared using a liquid-liquid diffusion approach. The variable crystal structures exhibit that compound 1 belongs to an orthorhombic crystal system, Pna2₁ space group (point group C_2V ) in the temperature range of 150-400 K. This hybrid supermolecule shows a dielectric relaxation behavior around room temperature, and the ferroelectric nature of 1 has been directly verified by hysteresis measurements. In addition, the AC (alternating current) conductivity study reveals that the 1 displays a beyond limiting behavior. These interesting findings are for the first time reported in the field of supermolecular ferroelectrics. This study may open a new way to construct supermolecular ferroelectrics and give insights into their conductor behavior.