The magnetism of 1T-MX2 (M = Zr, Hf; X = S, Se) monolayers by hole doping

The magnetism of hole doped 1T-MX₂ (M = Zr, Hf; X = S, Se) monolayers is systematically studied by using first principles density functional calculations. The pristine 1T-MX₂ monolayers are semiconductors with nonmagnetic ground states, which can be transformed to ferromagnetic states by the approach of hole doping. For the unstrained monolayers, the spontaneous magnetization appears once above the critical hole density (10¹⁴ cm⁻²), where the p orbital of S or Se atoms contributes the most of the magnetic moment. As the tensile strains exceed 4%, the magnetic moments per hole of ZrS₂ and HfS₂ monolayers increase sharply to a saturated value with increasing hole density, implying obvious advantages over the unstrained monolayers. The phonon dispersion calculations for the strained ZrS₂ and HfS₂ monolayers indicate that they can keep the dynamical stability by hole doping. Furthermore, we propose that the fluorine atom modified ZrS₂ monolayer could obtain stable ferromagnetism. The magnetism in hole doped 1T-MX₂ (M = Zr, Hf; X = S, Se) monolayers has great potential for developing spintronic devices with desirable applications.

The magnetism of zirconium and hafnium dichalcogenides by hole doping is studied by using first principles calculations.

Perpendicular Optical Reversal of the Linear Dichroism and Polarized Photodetection in 2D GeAs

The ability to detect linearly polarized light is central to practical applications in polarized optical and optoelectronic fields and has been successfully demonstrated with polarized photodetection of in-plane anisotropic two-dimensional (2D) materials. Here, we report the anisotropic optical characterization of a group IV-V compound-2D germanium arsenic (GeAs) with anisotropic monoclinic structures. High-quality 2D GeAs crystals show the representative angle-resolved Raman property. The in-plane anisotropic optical nature of the GeAs crystal is further investigated by polarization-resolved absorption spectra (400-2000 nm) and polarization-sensitive photodetectors. From the visible to the near-infrared range, 2D GeAs nanoflakes demonstrate the distinct perpendicular optical reversal with a 75-80° angle on both the linear dichroism and polarization-sensitive photodetection. Obvious anisotropic features and the high dichroic ratio of I_pmax /I_pmin ∼ 1.49 at 520 nm and I_pmax /I_pmin ∼ 4.4 at 830 nm are achieved by the polarization-sensitive photodetection. The polarization-dependent photocurrent mapping implied that the polarized photocurrent mainly occurred at the Schottky photodiodes between electrode/GeAs interface. These experimental results are consistent with the theoretical calculation of band structure and band realignment. Besides the excellent polarization-sensitive photoresponse properties, GeAs-based photodetectors also exhibit rapid on/off response. These results demonstrate that the 2D GeAs crystals have promising potential for polarization optical applications.

Defect Engineering in Single-Layer MoS2 Using Heavy Ion Irradiation

Transition metal dichalcogenides (TMDs) have attracted much attention due to their promising optical, electronic, magnetic, and catalytic properties. Engineering the defects in TMDs represents an effective way to achieve novel functionalities and superior performance of TMDs devices. However, it remains a significant challenge to create defects in TMDs in a controllable manner or to correlate the nature of defects with their functionalities. In this work, taking single-layer MoS₂ as a model system, defects with controlled densities are generated by 500 keV Au irradiation with different ion fluences, and the generated defects are mostly S vacancies. We further show that the defects introduced by ion irradiation can significantly affect the properties of the single-layer MoS₂, leading to considerable changes in its photoluminescence characteristics and electrocatalytic behavior. As the defect density increases, the characteristic photoluminescence peak of MoS₂ first blueshifts and then redshifts, which is likely due to the electron transfer from MoS₂ to the adsorbed O₂ at the defect sites. The generation of the defects can also strongly improve the hydrogen evolution reaction activity of MoS₂, attributed to the modified adsorption of atomic hydrogen at the defects.

Nonvolatile and Programmable Photodoping in MoTe2 for Photoresist-Free Complementary Electronic Devices

2D transition-metal dichalcogenide (TMD)-based electronic devices have been extensively explored toward the post-Moore era. Huge efforts have been devoted to modulating the doping profile of TMDs to achieve 2D p-n junctions and inverters, the fundamental units in logic circuits. Here, photoinduced nonvolatile and programmable electron doping in MoTe₂ based on a heterostructure of MoTe₂ and hexagonal boron nitride (BN) is reported. The electron transport property in the MoTe₂ device can be precisely controlled by modulating the magnitude of the photodoping gate exerted on BN. Through tuning the polarity of the photodoping gate exerted on BN under illumination, such a doping effect in MoTe₂ can be programmed with excellent repeatability and is retained for over 14 d in the absence of an external perturbation. By spatially controlling the photodoping region in MoTe₂ , a photoresist-free p-n junction and inverter in the MoTe₂ homostructure are achieved. The MoTe₂ diode exhibits a near-unity ideality factor of ≈1.13 with a rectification ratio of ≈1.7 × 10⁴ . Moreover, the gain of the MoTe₂ inverter reaches ≈98, which is among the highest values for 2D-material-based homoinverters. These findings promise photodoping as an effective method to achieve 2D-TMDs-based nonvolatile and programmable complementary electronic devices.

Two-dimensional black phosphorus: its fabrication, functionalization and applications

Phosphorus, one of the most abundant elements in the Earth (∼0.1%), has attracted much attention in the last five years since the rediscovery of two-dimensional (2D) black phosphorus (BP) in 2014. The successful scaling down of BP endows this 'old material' with new vitality, resulting from the intriguing semiconducting properties in the atomic scale limit, i.e. layer-dependent bandgap that covers from the visible light to mid-infrared light spectrum as well as hole-dominated ambipolar transport characteristics. Intensive research effort has been devoted to the fabrication, characterization, functionalization and application of BP and other phosphorus allotropes. In this review article, we summarize the fundamental properties and fabrication techniques of BP, with particular emphasis on the recent progress in molecular beam epitaxy growth of 2D phosphorus. Subsequently, we highlight recent progress in BP (opto)electronic device applications achieved via customized manipulation methods, such as interface, defect and bandgap engineering as well as forming Lego-like stacked heterostructures.

Structural and electronic properties of a van der Waals heterostructure based on silicene and gallium selenide: effect of strain and electric field

Combining van der Waals heterostructures by stacking different two-dimensional materials on top of each other layer-by-layer can enhance their desired properties and greatly extend the applications of the parent materials. In this work, by means of first principles calculations, we investigate systematically the structural and electronic properties of six different stacking configurations of a Si/GaSe heterostructure. The effect of biaxial strain and electric field on the electronic properties of the most energetically stable configuration of the Si/GaSe heterostructure has also been discussed. At the equilibrium state, the electronic properties of the Si/GaSe heterostructure in all its stacking configurations are well kept as compared with that of single layers owing to their weak van der Waals interactions. Interestingly, we find that a sizable band gap is opened at the Dirac K point of silicene in the Si/GaSe heterostructure, which could be further controlled by biaxial strain or electric field. These findings open up a possibility for designing silicene-based electronic devices, which exhibit a controllable band gap. Furthermore, the Si/GaSe heterostructure forms an n-type Schottky contact with a small Schottky barrier height of 0.23 eV. A transformation from the n-type Schottky contact to a p-type one, or from the Schottky contact to an ohmic contact may occur in the Si/GaSe heterostructure when strain or an electric field is applied.

Antimonene: From Experimental Preparation to Practical Application

The two-dimensional material antimonene was first reported in 2015. Subsequently, its unique properties, including enhanced stability, high carrier mobility, and band-gap tunability, were predicted theoretically. These theoretical results have motivated experimental confirmation and thus a better understanding of this new material. Recently, the preparation of antimonene and its attempted use in several applications have attracted extensive attention. This Minireview focuses on both the experimental preparation and practical applications of antimonene, including the results of recent research on novel methods of preparing antimonene and its potential applications in optoelectronic devices, electrocatalysis, energy storage, and cancer therapy. Moreover, it provides insight that could further improve the preparation of antimonene and also describes numerous opportunities for application.

High-Performance Wafer-Scale MoS2 Transistors toward Practical Application

Atomic thin transition-metal dichalcogenides (TMDs) are considered as an emerging platform to build next-generation semiconductor devices. However, to date most devices are still based on exfoliated TMD sheets on a micrometer scale. Here, a novel chemical vapor deposition synthesis strategy by introducing multilayer (ML) MoS₂ islands to improve device performance is proposed. A four-probe method is applied to confirm that the contact resistance decreases by one order of magnitude, which can be attributed to a conformal contact by the extra amount of exposed edges from the ML-MoS₂ islands. Based on such continuous MoS₂ films synthesized on a 2 in. insulating substrate, a top-gated field effect transistor (FET) array is fabricated to explore key metrics such as threshold voltage (V _T ) and field effect mobility (μ_FE ) for hundreds of MoS₂ FETs. The statistical results exhibit a surprisingly low variability of these parameters. An average effective μ_FE of 70 cm² V^-1 s^-1 and subthreshold swing of about 150 mV dec^-1 are extracted from these MoS₂ FETs, which are comparable to the best top-gated MoS₂ FETs achieved by mechanical exfoliation. The result is a key step toward scaling 2D-TMDs into functional systems and paves the way for the future development of 2D-TMDs integrated circuits.

Large-Area Synthesis of Layered HfS2(1- x )Se2 x Alloys with Fully Tunable Chemical Compositions and Bandgaps

Alloying transition metal dichalcogenides (TMDs) with different compositions is demonstrated as an effective way to acquire 2D semiconductors with widely tunable bandgaps. Herein, for the first time, the large-area synthesis of layered HfS_{2(1- x )}Se_{2 x} alloys with fully tunable chemical compositions on sapphire by chemical vapor deposition is reported, greatly expanding and enriching the family of 2D TMDs semiconductors. The configuration and high quality of their crystal structure are confirmed by various characterization techniques, and the bandgap of these alloys can be continually modulated from 2.64 to 1.94 eV with composition variations. Furthermore, prototype HfS_{2(1- x )}Se_{2 x} photodetectors with different Se compositions are fabricated, and the HfSe₂ photodetector manifests the best performance among all the tested HfS_{2(1- x )}Se_{2 x} devices. Remarkably, by introducing a hexagonal boron nitride layer, the performance of the HfSe₂ photodetector is greatly improved, exhibiting a high on/off ratio exceeding 10⁵, an ultrafast response time of about 190 µs, and a high detectivity of 10¹² Jones. This simple and controllable approach opens up a new way to produce high-quality 2D HfS_{2(1- x )}Se_{2 x} layers, which are highly qualified candidates for the next-generation application in high-performance optoelectronics.

An Insight into the Phase Transformation of WS2 upon Fluorination

The transformation from semiconducting to metallic phase, accompanied by a structural transition in 2D transition metal dichalcogenides has attracted the attention of the researchers worldwide. The unconventional structural transformation of fluorinated WS₂ (FWS₂ ) into the 1T phase is described. The energy difference between the two phases debugs this transition, as fluorination enhances the stability of 1T FWS₂ and makes it energetically favorable at higher F concentration. Investigation of the electronic and optical nature of FWS₂ is supplemented by possible band structures and bandgap calculations. Magnetic centers in the 1T phase appear in FWS₂ possibly due to the introduction of defect sites. A direct consequence of the phase transition and associated increase in interlayer spacing is a change in friction behavior. Friction force microscopy is used to determine this effect of functionalization accompanied phase transformation.

2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices

Black phosphorus (BP), first synthesized in 1914 and rediscovered as a new member of the family of 2D materials in 2014, combines many extraordinary properties of graphene and transition-metal dichalcogenides, such as high charge-carrier mobility, and a tunable direct bandgap. In addition, it displays other distinguishing properties, e.g., ambipolar transport and highly anisotropic properties. The successful application of BP in electronic and optoelectronic devices has stimulated significant research interest in other allotropes and alloys of 2D phosphorene, a class of 2D materials consisting of elemental phosphorus. As an atomically thin sheet, the various interfaces presented in 2D phosphorene (substrate/phosphorene, electrode/phosphorene, dielectric/phosphorene, atmosphere/phosphorene) play dominant roles in its bottom-up synthesis, and determine several key characteristics for the devices, such as carrier injection, carrier transport, carrier concentration, and device stability. The rational design/engineering of interfaces provides an effective way to manipulate the growth of 2D phosphorene, and modulate its electronic and optoelectronic properties to realize high-performance multifunctional devices. Here, recent progress of the interface engineering of 2D phosphorene is highlighted, including the epitaxial growth of single-layer blue phosphorus on different substrates, surface functionalization of BP for high-performance complementary devices, and the investigation of the BP degradation mechanism in ambient air.

Abnormal Near-Infrared Absorption in 2D Black Phosphorus Induced by Ag Nanoclusters Surface Functionalization

Black phosphorus (BP), as a fast emerging 2D material, shows promising potential in near-infrared (NIR) photodetection owing to its relatively small direct thickness-dependent bandgaps. However, the poor NIR absorption due to the atomically thin nature strongly hinders the practical application. In this study, it is demonstrated that surface functionalization of Ag nanoclusters on 2D BP can induce an abnormal NIR absorption at ≈746 nm, leading to ≈35 (138) times enhancement in 808 (730) nm NIR photoresponse for BP-based field-effect transistors. First-principles calculations reveal that localized bands are introduced into the bandgap of BP, serving as the midgap states, which create new transitions to the conduction band of BP and eventually lead to the abnormal absorption. This work provides a simple yet effective method to dramatically increase the NIR absorption of BP, which is crucial for developing high-performance NIR optoelectronic devices.

Ultra-thin bimetallic alloy nanowires with porous architecture/monolayer MoS2 nanosheet as a highly sensitive platform for the electrochemical assay of hazardous omethoate pollutant

A novel electrochemical biosensor was designed for sensitive detection of organophosphate pesticides based on three-dimensional porous bimetallic alloy architecture with ultrathin nanowires (PdCo NWs, PdCu NWs, PdNi NWs) and monolayer MoS₂ nanosheet (m-MoS₂). The bimetallic alloy NWs/m-MoS₂ nanomaterials were used as a sensing platform for electrochemical analysis of omethoate, a representative organophosphate pesticide, via acetylcholinesterase inhibition pathway. We demonstrated that all three bimetallic alloy NWs enhanced electrochemical responses of enzymatic biosensor, benefited from bimetallic synergistic action and porous structure. In particular, PdNi NWs outperformed other two bimetallic alloy. Moreover, PdNi NWs/m-MoS₂ as an electronic transducer is superior to the corresponding biosensor in the absence of monolayer MoS₂ nanosheet, which arise from synergistic signal amplification effect between different components. Under optimized conditions, the developed biosensor on the basis of PdNi NWs/m-MoS₂ shows outstanding performance for the electrochemical assay of omethoate, such as a wide linear range (10^-13 M∼10^-7 M), a low detection limit of 0.05 pM at a signal-to-noise ratio of 3, high sensitivity and long-time stability. The results demonstrate that bimetallic alloy NWs/m-MoS₂ nanocomposites could be excellent transducers to promote electron transfer for the electrochemical reactions, holding great potentials in the construction of current and future biosensing devices.

Defect Engineering for Modulating the Trap States in 2D Photoconductors

Defect-induced trap states are essential in determining the performance of semiconductor photodetectors. The de-trap time of carriers from a deep trap can be prolonged by several orders of magnitude as compared to shallow traps, resulting in additional decay/response time of the device. Here, it is demonstrated that the trap states in 2D ReS2 can be efficiently modulated by defect engineering through molecule decoration. The deep traps that greatly prolong the response time can be mostly filled by protoporphyrin molecules. At the same time, carrier recombination and shallow traps in-turn play dominant roles in determining the decay time of the device, which can be several orders of magnitude faster than the as-prepared device. Moreover, the specific detectivity of the device is enhanced (as high as ≈1.89 × 1013 Jones) due to the significant reduction of  the dark current through charge transfer between ReS2 and molecules. Defect engineering of trap states therefore provides a solution to achieve photodetectors with both high responsivity and fast response.

Ultraviolet Light-Induced Persistent and Degenerated Doping in MoS2 for Potential Photocontrollable Electronics Applications

Efficient modulation of carrier concentration is fundamentally important for tailoring the electronic and photoelectronic properties of semiconducting materials. Photoinduced doping is potentially a promising way to realize such a goal for atomically thin nanomaterials in a rapid and defect-free manner. However, the wide applications of photoinduced doping in nanomaterials are severely constrained by the low doping concentration and poor stability that can be reached. Here, we propose a novel photoinduced doping mechanism based on the external photoelectric effect of metal coating on nanomaterials to significantly enhance the achievable doping concentration and stability. This approach is preliminarily demonstrated by an MX₂ (M is Mo or Re; X is S or Se) nanoflake modified through a simple process of sequentially depositing and annealing an Au layer on the surface of the flake. Under ultraviolet (UV) light illumination, the modified MX₂ achieves degenerated n-type doping density of 10¹⁴ cm^-2 rapidly according to the experimentally observed >10⁴ times increment in the channel current. The doping level persists after the removal of UV illumination with a nonobservable decrease over 1 day in vacuum (less than 23% over 7 days under an ambient environment). This photoinduced doping approach may contribute a major leap to the development of photocontrollable nanoelectronics.

Enhanced magnetic properties and tunable Dirac point of graphene/Mn-doped monolayer MoS2 heterostructures

Graphene is one of the most promising spintronic materials due to its high carrier mobility. However, the absence of a band gap and ferromagnetic order in graphene seriously limit its applications in spintronics. How to utilize its high carrier mobility as well as mediate its electronic structure remains a challenge. Herein, we design a novel composite, which is composed of graphene and Mn-doped monolayer MoS₂. The magnetic properties and electronic structures of graphene/Mn-doped monolayer MoS₂ heterostructures were studied by using density functional theory (DFT) with the van der Waals (vdW) correlations (DFT-D). We found that the heterostructures show increased magnetic moments and more stable ferromagnetic (FM) states compared with that of isolated Mn-doped MoS₂ monolayer. Our further studies show that many electrons are transferred to Mn-doped MoS₂ monolayer from graphene, which causes the Fermi level to shift down below the Dirac cone about 0.59 eV. The transfered electrons also enhance the FM coupling between Mn ions. Graphene is partially spin polarized because of the magnetic proximity effect, which leads to the spin-dependent gaps for spin-up (16.1 meV) and spin-down (5 meV) at Dirac point, respectively. The introduction of sulfur (S) vacancy to the interface results in a much more stable FM structure and a higher total magnetic moment of the FM state; furthermore, it raises the spin polarization of graphene π orbitals and opens up a small band gap of about 7 meV. These findings propose a new route to facilitate the design of spintronic devices which both need stable ferromagnetism and finite band gap.

Properties, Preparation and Applications of Low Dimensional Transition Metal Dichalcogenides

Low-dimensional layered transition metal dichalcogenides (TMDs) have recently emerged as an important fundamental research material because of their unique structural, physical and chemical properties. These novel properties make these TMDs a suitable candidate in numerous potential applications. In this review, we briefly summarize the properties of low-dimensional TMDs, and then focus on the various methods used in their preparation. The use of TMDs in electronic devices, optoelectronic devices, electrocatalysts, biosystems, and hydrogen storage is also explored. The cutting-edge future development probabilities of these materials and numerous research challenges are also outlined in this review.

Modulation of photothermal anisotropy using black phosphorus/rhenium diselenide heterostructures

Manipulating the polarization of an incident beam using two-dimensional materials has become an important research direction towards the development of nano-optical devices. Black phosphorus (BP) and rhenium diselenide (ReSe2) possess excellent in-plane optical anisotropy with optical birefringence in the visible region, which has led to novel applications in polarizing optics and optoelectronics. Herein, the polarization-dependent absorption of BP and ReSe2 and a modulated pump beam is utilized to obtain the photothermal signal from them. The photothermal anisotropy of BP and ReSe2 has been explored using photothermal detection. Then we have defined the photothermal contrast using the ratio of the maximum to the minimum of the photothermal signal. The photothermal contrast of BP and ReSe2 can be obtained accurately by the relationship between the polarization angle of the pump light and the photothermal signal. We demonstrate that a layered BP with different thicknesses can remarkably change the photothermal contrast. In contrast, the photothermal contrast of ReSe2 does not change with the different thicknesses of the samples. Further, the photothermal anisotropies of BP/ReSe2 heterostructures were also explored. The photothermal contrasts of samples were observed to change with different stacking angles indicating that the photothermal anisotropy of heterostructures is dependent on the stacking angle. Our findings provide new prospects for designing novel optical devices based on two-dimensional anisotropic materials, with potential applications in electronics, photonics, and optoelectronics.

Tungsten disulfide nanosheets supported poly(xanthurenic acid) as a signal transduction interface for electrochemical genosensing applications

Tungsten disulfide (WS₂) nanosheets supported poly(xanthurenic acid) (PXa) was used as the signal transduction interface for electrochemical genosensing. The WS₂ nanosheets were obtained from bulk WS₂ using a simple ultrasonic method. Due to the unique physical adsorption of Xa monomers to WS₂, the electropolymerization efficiency was greatly improved, accompanied with an increased electrochemical response of PXa. The obtained PXa/WS₂ nanocomposite not only served as a substrate for DNA immobilization but also reflected the electrochemical transduction originating from DNA immobilization and hybridization without any other indicators or complicated labelling steps. Owing to the presence of abundant carboxyl groups, the probe ssDNA was covalently attached on the carboxyl-terminated PXa/WS₂ nanocomposite through the free amines of DNA sequences based on the 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide and N-hydrosulfosuccinimide crosslinking reaction. The covalently immobilized probe ssDNA could selectively hybridize with its target DNA to form dsDNA on the surface of the PXa/WS₂ nanocomposite. This developed biosensor achieved a satisfactory detection limit down to 1.6 × 10⁻¹⁶ mol L⁻¹ and a dynamic range of 1.0 × 10⁻¹⁵ to 1.0 × 10⁻¹¹ mol L⁻¹ for detection of circulating tumor DNA related to gastric carcinoma. Selectivity of the biosensor has been investigated in presence of non-complementary, one-mismatched and two-mismatched DNA sequences.

An electrochemical signal transduction sensing interface for detecting PIK3CA gene was developed based on WS₂ nanosheets supported PXa.