Atomic Layer Deposited Corrosion Protection: A Path to Stable and Efficient Photoelectrochemical Cells

A fundamental challenge in developing photoelectrochemical cells for the renewable production of solar chemicals and fuels is the simultaneous requirement of efficient light absorption and robust stability under corrosive conditions. Schemes for corrosion protection of semiconductor photoelectrodes such as silicon using deposited layers were proposed and attempted for several decades, but increased operational lifetimes were either insufficient or the resulting penalties for device efficiency were prohibitive. In recent years, advances in atomic layer deposition (ALD) of thin coatings have made novel materials engineering possible, leading to substantial and simultaneous improvements in stability and efficiency of photoelectrochemical cells. The self-limiting, layer-by-layer growth of ALD makes thin films with low pinhole densities possible and may also provide a path to defect control that can generalize this protection technology to a large set of materials necessary to fully realize photoelectrochemical cell technology for artificial photosynthesis.

Photoelectrochemical Behavior of Electrophoretically Deposited Hematite Thin Films Modified with Ti(IV)

Doping hematite with different elements is a common strategy to improve the electrocatalytic activity towards the water oxidation reaction, although the exact effect of these external agents is not yet clearly understood. Using a feasible electrophoretic procedure, we prepared modified hematite films by introducing in the deposition solution Ti(IV) butoxide. Photoelectrochemical performances of all the modified electrodes were superior to the unmodified one, with a 4-fold increase in the photocurrent at 0.65 V vs. SCE in 0.1 M NaOH (pH 13.3) for the 5% Ti-modified electrode, which was the best performing electrode. Subsequent functionalization with an iron-based catalyst led, at the same potential, to a photocurrent of ca. 1.5 mA·cm(-2), one of the highest achieved with materials based on solution processing in the absence of precious elements. AFM, XPS, TEM and XANES analyses revealed the formation of different Ti(IV) oxide phases on the hematite surface, that can reduce surface state recombination and enhance hole injection through local surface field effects, as confirmed by electrochemical impedance analysis.

Lightly Fluorinated Graphene as a Protective Layer for n-Type Si(111) Photoanodes in Aqueous Electrolytes

The behavior of n-Si(111) photoanodes covered by monolayer sheets of fluorinated graphene (F-Gr) was investigated under a range of chemical and electrochemical conditions. The electrochemical behavior of n-Si/F-Gr and np(+)-Si/F-Gr photoanodes was compared to hydride-terminated n-Si (n-Si-H) and np(+)-Si-H electrodes in contact with aqueous Fe(CN)6(3-/4-) and Br2/HBr electrolytes as well as in contact with a series of outer-sphere, one-electron redox couples in nonaqueous electrolytes. Illuminated n-Si/F-Gr and np(+)-Si/F-Gr electrodes in contact with an aqueous K3(Fe(CN)6/K4(Fe(CN)6 solutions exhibited stable short-circuit photocurrent densities of ∼10 mA cm(-2) for 100,000 s (>24 h), in comparison to bare Si electrodes, which yielded nearly a complete photocurrent decay over ∼100 s. X-ray photoelectron spectra collected before and after exposure to aqueous anodic conditions showed that oxide formation at the Si surface was significantly inhibited for Si electrodes coated with F-Gr relative to bare Si electrodes exposed to the same conditions. The variation of the open-circuit potential for n-Si/F-Gr in contact with a series of nonaqueous electrolytes of varying reduction potential indicated that the n-Si/F-Gr did not form a buried junction with respect to the solution contact. Further, illuminated n-Si/F-Gr electrodes in contact with Br2/HBr(aq) were significantly more electrochemically stable than n-Si-H electrodes, and n-Si/F-Gr electrodes coupled to a Pt catalyst exhibited ideal regenerative cell efficiencies of up to 5% for the oxidation of Br(-) to Br2.

Atomic Layer Deposition of Bismuth Vanadates for Solar Energy Materials

The fabrication of porous nanocomposites is key to the advancement of energy conversion and storage devices that interface with electrolytes. Bismuth vanadate, BiVO4 , is a promising oxide for solar water splitting where the controlled fabrication of BiVO4 layers within porous, conducting scaffolds has remained a challenge. Here, the atomic layer deposition of bismuth vanadates is reported from BiPh3 , vanadium(V) oxytriisopropoxide, and water. The resulting films have tunable stoichiometry and may be crystallized to form the photoactive scheelite structure of BiVO4 . A selective etching process was used with vanadium-rich depositions to enable the synthesis of phase-pure BiVO4 after spinodal decomposition. BiVO4 thin films were measured for photoelectrochemical performance under AM 1.5 illumination. The average photocurrents were 1.17 mA cm(-2) at 1.23 V versus the reversible hydrogen electrode using a hole-scavenging sulfite electrolyte. The capability to deposit conformal bismuth vanadates will enable a new generation of nanocomposite architectures for solar water splitting.

Titanium Oxide Crystallization and Interface Defect Passivation for High Performance Insulator-Protected Schottky Junction MIS Photoanodes

Atomic layer deposited (ALD) TiO2 protection layers may allow for the development of both highly efficient and stable photoanodes for solar fuel synthesis; however, the very different conductivities and photovoltages reported for TiO2-protected silicon anodes prepared using similar ALD conditions indicate that mechanisms that set these key properties are, as yet, poorly understood. In this report, we study hydrogen-containing annealing treatments and find that postcatalyst-deposition anneals at intermediate temperatures reproducibly yield decreased oxide/silicon interface trap densities and high photovoltage. A previously reported insulator thickness-dependent photovoltage loss in metal-insulator-semiconductor Schottky junction photoanodes is suppressed. This occurs simultaneously with TiO2 crystallization and an increase in its dielectric constant. At small insulator thickness, a record for a Schottky junction photoanode of 623 mV photovoltage is achieved, yielding a photocurrent turn-on at 0.92 V vs NHE or -0.303 V with respect to the thermodynamic potential for water oxidation.

Engineering Interfacial Silicon Dioxide for Improved Metal-Insulator-Semiconductor Silicon Photoanode Water Splitting Performance

Silicon photoanodes protected by atomic layer deposited (ALD) TiO2 show promise as components of water splitting devices that may enable the large-scale production of solar fuels and chemicals. Minimizing the resistance of the oxide corrosion protection layer is essential for fabricating efficient devices with good fill factor. Recent literature reports have shown that the interfacial SiO2 layer, interposed between the protective ALD-TiO2 and the Si anode, acts as a tunnel oxide that limits hole conduction from the photoabsorbing substrate to the surface oxygen evolution catalyst. Herein, we report a significant reduction of bilayer resistance, achieved by forming stable, ultrathin (<1.3 nm) SiO2 layers, allowing fabrication of water splitting photoanodes with hole conductances near the maximum achievable with the given catalyst and Si substrate. Three methods for controlling the SiO2 interlayer thickness on the Si(100) surface for ALD-TiO2 protected anodes were employed: (1) TiO2 deposition directly on an HF-etched Si(100) surface, (2) TiO2 deposition after SiO2 atomic layer deposition on an HF-etched Si(100) surface, and (3) oxygen scavenging, post-TiO2 deposition to decompose the SiO2 layer using a Ti overlayer. Each of these methods provides a progressively superior means of reliably thinning the interfacial SiO2 layer, enabling the fabrication of efficient and stable water oxidation silicon anodes.

Controlled Design of Functional Nano-Coatings: Reduction of Loss Mechanisms in Photoelectrochemical Water Splitting

Efficient water splitting with photoelectrodes requires highly performing and stable photoactive materials. Since there is no material known which fulfills all these requirements because of various loss mechanisms, we present a strategy for efficiency enhancement of photoanodes via deposition of functional coatings in the nanometer range. Origins of performance losses in particle-based oxynitride photoanodes were identified and specifically designed coatings were deposited to address each loss mechanism individually. Amorphous TiO2 located at interparticle boundaries enables high electron conductivity. A thin layer of amorphous Ta2O5 can be used as protection layer for photoanodes because of its hole conductivity and thermal and chemical stability. An amorphous layer of NiOx and Co(OH)2 reduces photocorrosion or increases water oxidation kinetics because they act as a hole-capture material or water oxidation catalyst, respectively. Crystalline CoOx nanoparticles increase photocurrent and reduce the onset potential due to enhanced charge separation. The combination of all coatings deposited by a scalable, mild, and reproducible step-by-step approach leads to high-performance oxynitride-based photoanodes providing a maximum photocurrent of 2.52 mA/cm(2) at 1.23 VRHE under AM1.5G illumination.

Self-Assembled Heteroepitaxial Oxide Nanocomposite for Photoelectrochemical Solar Water Oxidation

We report on spontaneously phase ordered heteroepitaxial SrTiO₃ (STO):ZnFe₂O₄ (ZFO) nanocomposite films that give rise to strongly enhanced photoelectrochemical solar water oxidation, consistent with enhanced photoinduced charge separation. The STO:ZFO nanocomposite yielded an enhanced photocurrent density of 0.188 mA/cm² at 1.23 V vs a reversible hydrogen electrode, which was 7.9- and 2.6-fold higher than that of the plain STO film and ZFO film cases under 1-sun illumination, respectively. The photoelectrode also produced stable photocurrent and Faradaic efficiencies of H₂ and O₂ formation that were more than 90%. Incident-photon-to-current-conversion efficiency measurements, Tauc plots, Mott-Schottky plots, and electrochemical impedance spectroscopy measurements proved that the strongly enhanced photogenerated charge separation resulted from vertically aligned pseudosingle crystalline components, epitaxial heterojunctions, and a staggered band alignment of the components of the nanocomposite films. This study presents a completely new avenue for efficient solar energy conversion applications.

Indirect Phase Transformation of CuO to Cu2O on a Nanowire Surface

The reduction of CuO nanowires (NWs) to Cu2O NWs undergoes an indirect phase transformation on the surface: from single crystalline CuO, to a disordered Cu2-δO phase, and then to crystalline Cu2O. A 9-12 nm disordered Cu2-δO is formed on the NW surface by exposing CuO NWs to CO at 1 Torr, 300 °C for 30 min. After 60 min, this layer decreases to 2-3 nm and is eliminated after 180 min. Energy dispersive X-ray spectroscopy using a scanning tunneling electron microscope and across a single NW reveals the disordered layer to be O-rich with respect to Cu2O with a maximum at. % Cu:O = 1.8. X-ray photoelectron spectroscopy shows adsorbed CO on the surface as evidence of the reduction reaction. Micro-Raman spectroscopy tracks the transformation in NWs as a function of reduction time. A CO enabled surface reduction reaction coupled to diffusion-limited transport of "nonlattice" O to the surface is proposed as a mechanism for Cu2-δO formation. The initial buildup of out-diffusing O to the surface appears to aid the formation of the disordered surface layer. The transformation follows Ostwald-Lussac's law which predicts formation of unstable phases over stable phases, when phase transformation rates are limited by kinetic or diffusional processes. The study provides a generalized approach for facile growth of few nanometer transient layers on multivalent, metal oxide NW surfaces.

Integrating a dual-silicon photoelectrochemical cell into a redox flow battery for unassisted photocharging

Solar rechargeable flow cells (SRFCs) provide an attractive approach for in situ capture and storage of intermittent solar energy via photoelectrochemical regeneration of discharged redox species for electricity generation. However, overall SFRC performance is restricted by inefficient photoelectrochemical reactions. Here we report an efficient SRFC based on a dual-silicon photoelectrochemical cell and a quinone/bromine redox flow battery for in situ solar energy conversion and storage. Using narrow bandgap silicon for efficient photon collection and fast redox couples for rapid interface charge injection, our device shows an optimal solar-to-chemical conversion efficiency of ∼5.9% and an overall photon-chemical-electricity energy conversion efficiency of ∼3.2%, which, to our knowledge, outperforms previously reported SRFCs. The proposed SRFC can be self-photocharged to 0.8 V and delivers a discharge capacity of 730 mAh l(-1). Our work may guide future designs for highly efficient solar rechargeable devices.

Semiconductor-Electrocatalyst Interfaces: Theory, Experiment, and Applications in Photoelectrochemical Water Splitting

Light-absorbing semiconductor electrodes coated with electrocatalysts are key components of photoelectrochemical energy conversion and storage systems. Efforts to optimize these systems have been slowed by an inadequate understanding of the semiconductor-electrocatalyst (sem|cat) interface. The sem|cat interface is important because it separates and collects photoexcited charge carriers from the semiconductor. The photovoltage generated by the interface drives "uphill" photochemical reactions, such as water splitting to form hydrogen fuel. Here we describe efforts to understand the microscopic processes and materials parameters governing interfacial electron transfer between light-absorbing semiconductors, electrocatalysts, and solution. We highlight the properties of transition-metal oxyhydroxide electrocatalysts, such as Ni(Fe)OOH, because they are the fastest oxygen-evolution catalysts known in alkaline media and are (typically) permeable to electrolyte. We describe the physics that govern the charge-transfer kinetics for different interface types, and show how numerical simulations can explain the response of composite systems. Emphasis is placed on "limiting" behavior. Electrocatalysts that are permeable to electrolyte form "adaptive" junctions where the interface energetics change during operation as charge accumulates in the catalyst, but is screened locally by electrolyte ions. Electrocatalysts that are dense, and thus impermeable to electrolyte, form buried junctions where the interface physics are unchanged during operation. Experiments to directly measure the interface behavior and test the theory/simulations are challenging because conventional photoelectrochemical techniques do not measure the electrocatalyst potential during operation. We developed dual-working-electrode (DWE) photoelectrochemistry to address this limitation. A second electrode is attached to the catalyst layer to sense or control current/voltage independent from that of the semiconductor back ohmic contact. Consistent with simulations, electrolyte-permeable, redox-active catalysts such as Ni(Fe)OOH form "adaptive" junctions where the effective barrier height for electron exchange depends on the potential of the catalyst. This is in contrast to sem|cat interfaces with dense electrolyte-impermeable catalysts, such as nanocrystalline IrOx, that behave like solid-state buried (Schottky-like) junctions. These results elucidate a design principle for catalyzed photoelectrodes. The buried heterojunctions formed by dense catalysts are often limited by Fermi-level pinning and low photovoltages. Catalysts deposited by "soft" methods, such as electrodeposition, form adaptive junctions that tend to provide larger photovoltages and efficiencies. We also preview efforts to improve theory/simulations to account for the presence of surface states and discuss the prospect of carrier-selective catalyst contacts.

Spatially Resolved Quantification of the Surface Reactivity of Solid Catalysts

A new property is reported that accurately quantifies and spatially describes the chemical reactivity of solid surfaces. The core idea is to create a reactivity weight function peaking at the Fermi level, thereby determining a weighted summation of the density of states of a solid surface. When such a weight function is defined as the derivative of the Fermi-Dirac distribution function at a certain non-zero temperature, the resulting property is the finite-temperature chemical softness, termed Fermi softness (SF ), which turns out to be an accurate descriptor of the surface reactivity. The spatial image of SF maps the reactive domain of a heterogeneous surface and even portrays morphological details of the reactive sites. SF analyses reveal that the reactive zones on a Pt3 Y(111) surface are the platinum sites rather than the seemingly active yttrium sites, and the reactivity of the S-dimer edge of MoS2 is spatially anisotropic. Our finding is of fundamental and technological significance to heterogeneous catalysis and industrial processes demanding rational design of solid catalysts.

Photoelectrochemical H2 Evolution with a Hydrogenase Immobilized on a TiO2 -Protected Silicon Electrode

The combination of enzymes with semiconductors enables the photoelectrochemical characterization of electron‐transfer processes at highly active and well‐defined catalytic sites on a light‐harvesting electrode surface. Herein, we report the integration of a hydrogenase on a TiO₂‐coated p‐Si photocathode for the photo‐reduction of protons to H₂. The immobilized hydrogenase exhibits activity on Si attributable to a bifunctional TiO₂ layer, which protects the Si electrode from oxidation and acts as a biocompatible support layer for the productive adsorption of the enzyme. The p‐Si|TiO₂|hydrogenase photocathode displays visible‐light driven production of H₂ at an energy‐storing, positive electrochemical potential and an essentially quantitative faradaic efficiency. We have thus established a widely applicable platform to wire redox enzymes in an active configuration on a p‐type semiconductor photocathode through the engineering of the enzyme–materials interface.

Photoelectrochemical H2 Evolution with a Hydrogenase Immobilized on a TiO2-Protected Silicon Electrode

The combination of enzymes with semiconductors enables the photoelectrochemical characterization of electron‐transfer processes at highly active and well‐defined catalytic sites on a light‐harvesting electrode surface. Herein, we report the integration of a hydrogenase on a TiO₂‐coated p‐Si photocathode for the photo‐reduction of protons to H₂. The immobilized hydrogenase exhibits activity on Si attributable to a bifunctional TiO₂ layer, which protects the Si electrode from oxidation and acts as a biocompatible support layer for the productive adsorption of the enzyme. The p‐Si|TiO₂|hydrogenase photocathode displays visible‐light driven production of H₂ at an energy‐storing, positive electrochemical potential and an essentially quantitative faradaic efficiency. We have thus established a widely applicable platform to wire redox enzymes in an active configuration on a p‐type semiconductor photocathode through the engineering of the enzyme–materials interface.

Water reduction by a p-GaInP2 photoelectrode stabilized by an amorphous TiO2 coating and a molecular cobalt catalyst

Producing hydrogen through solar water splitting requires the coverage of large land areas. Abundant metal-based molecular catalysts offer scalability, but only if they match noble metal activities. We report on a highly active p-GaInP2 photocathode protected through a 35-nm TiO2 layer functionalized by a cobaloxime molecular catalyst (GaInP2-TiO2-cobaloxime). This photoelectrode mediates H2 production with a current density of ∼9 mA cm(-2) at a potential of 0 V versus RHE under 1-sun illumination at pH 13. The calculated turnover number for the catalyst during a 20-h period is 139,000, with an average turnover frequency of 1.9 s(-1). Bare GaInP2 shows a rapid current decay, whereas the GaInP2-TiO2-cobaloxime electrode shows ≤5% loss over 20 min, comparable to a GaInP2-TiO2-Pt catalyst particle-modified interface. The activity and corrosion resistance of the GaInP2-TiO2-cobaloxime photocathode in basic solution is made possible by an atomic layer-deposited TiO2 and an attached cobaloxime catalyst.

Substrate-Electrode Interface Engineering by an Electron-Transport Layer in Hematite Photoanode

The photoelectrochemical water oxidation efficiency of photoanodes is largely limited by interfacial charge-transfer processes. Herein, a metal oxide electron-transport layer (ETL) was introduced at the substrate-electrode interface. Hematite photoanodes prepared on Li(+)- or WO3-modified substrates deliver higher photocurrent. It is inferred that a Li-doped Fe2O3 (Li:Fe2O3) layer with lower flat band potential than the bulk is formed. Li:Fe2O3 and WO3 are proved to function as an expressway for electron extraction. Via introducing ETL, both the charge separation and injection efficiencies are improved. The lifetime of photogenerated electrons is prolonged by 3 times, and the ratio of surface charge transfer and recombination rate is enhanced by 5 times with Li:Fe2O3 and 125 times with WO3 ETL at 1.23 V versus reversible hydrogen electrode. This result indicates the expedited electron extraction from photoanode to the substrate can suppress not only the recombination at the back contact interface but also those at the surface, which results in higher water oxidation efficiency.

Bismuth oxyhalides: synthesis, structure and photoelectrochemical activity

We report the synthesis and photoelectrochemical assessment of phase pure tetragonal matlockite structured BiOX (where X = Cl, Br, I) films.

We report the synthesis and photoelectrochemical assessment of phase pure tetragonal matlockite structured BiOX (where X = Cl, Br, I) films. The materials were deposited using aerosol-assisted chemical vapour deposition. The measured optical bandgaps of the oxyhalides, supported by density functional theory calculations, showed a red shift with the increasing size of halide following the binding energy of the anion p-orbitals that form the valence band. Stability and photoelectrochemical studies carried out without a sacrificial electron donor showed the n-type BiOBr film to have the highest photocurrent reported for BiOBr in the literature to date (0.3 mA cm^–2 at 1.23 V vs. RHE), indicating it is an excellent candidate for solar fuel production with a very low onset potential of 0.2 V vs. RHE. The high performance was attributed to the preferred growth of the film in the [011] direction, as shown by X-ray diffraction, leading to internal electric fields that minimize charge carrier recombination.

MoS2-Titanium Contact Interface Reactions

The formation of the Ti-MoS2 interface, which is heavily utilized in nanoelectronic device research, is studied by X-ray photoelectron spectroscopy. It is found that, if deposition under high vacuum (∼1 × 10(-6) mbar) as opposed to ultrahigh vacuum (∼1 × 10(-9) mbar) conditions are used, TiO2 forms at the interface rather than Ti. The high vacuum deposition results in an interface free of any detectable reaction between the semiconductor and the deposited contact. In contrast, when metallic titanium is successfully deposited by carrying out depositions in ultrahigh vacuum, the titanium reacts with MoS2 forming Ti(x)S(y) and metallic Mo at the interface. These results have far reaching implications as many prior studies assuming Ti contacts may have actually used TiO2 due to the nature of the deposition tools used.

TiO2/BiVO4 Nanowire Heterostructure Photoanodes Based on Type II Band Alignment

Metal oxides that absorb visible light are attractive for use as photoanodes in photoelectrosynthetic cells. However, their performance is often limited by poor charge carrier transport. We show that this problem can be addressed by using separate materials for light absorption and carrier transport. Here, we report a Ta:TiO2|BiVO4 nanowire photoanode, in which BiVO4 acts as a visible light-absorber and Ta:TiO2 acts as a high surface area electron conductor. Electrochemical and spectroscopic measurements provide experimental evidence for the type II band alignment necessary for favorable electron transfer from BiVO4 to TiO2. The host-guest nanowire architecture presented here allows for simultaneously high light absorption and carrier collection efficiency, with an onset of anodic photocurrent near 0.2 V vs RHE, and a photocurrent density of 2.1 mA/cm(2) at 1.23 V vs RHE.

Nanostructured SnS with inherent anisotropic optical properties for high photoactivity

In view of the worldwide energy challenge in the 21(st) century, the technology of semiconductor-based photoelectrochemical (PEC) water splitting has received considerable attention as an alternative approach for solar energy harvesting and storage. Two-dimensional (2D) structures such as nanosheets have the potential to tap the solar energy by unlocking the functional properties at the nanoscale. Tin(ii) sulfide is a fascinating solar energy material due to its anisotropic material properties. In this manuscript, we report on exploiting the 2D structure modulated optical properties of nanocrystalline SnS thin film synthesized by chemical spray pyrolysis using ambient transport in the harvesting of solar energy. We obtained the nanostructured SnS with well-preserved dimensions and morphologies with one step processing. The work demonstrates that the intrinsically ordered SnS nanostructure on FTO coated glass can tap the incident radiation in an efficient manner. The structure-property relationship to explain the photo-response in nanocrystalline-SnS is verified experimentally and theoretically. The novel design scheme for antireflection coating along with the anisotropic properties of SnS is conceived for realizing a PEC cell. The developed PEC cell consists of a SnS photoanode which shows considerably high photocurrent density of 7 mA cm(-2) with aqueous media under AM 1.5G, 100 mW cm(-2) exposure with notably stable operation. Electrochemical impedance spectroscopy revealed that a non-ideal capacitive behavior as well as drift assisted transport across the solid-state interface is responsible for such a high photo-current density in the nanocrystalline-SnS photoanode.

Atomic layer deposition of Pd and Pt nanoparticles for catalysis: on the mechanisms of nanoparticle formation

The deposition of Pd and Pt nanoparticles by atomic layer deposition (ALD) has been studied extensively in recent years for the synthesis of nanoparticles for catalysis. For these applications, it is essential to synthesize nanoparticles with well-defined sizes and a high density on large-surface-area supports. Although the potential of ALD for synthesizing active nanocatalysts for various chemical reactions has been demonstrated, insight into how to control the nanoparticle properties (i.e. size, composition) by choosing suitable processing conditions is lacking. Furthermore, there is little understanding of the reaction mechanisms during the nucleation stage of metal ALD. In this work, nanoparticles synthesized with four different ALD processes (two for Pd and two for Pt) were extensively studied by transmission electron spectroscopy. Using these datasets as a starting point, the growth characteristics and reaction mechanisms of Pd and Pt ALD relevant for the synthesis of nanoparticles are discussed. The results reveal that ALD allows for the preparation of particles with control of the particle size, although it is also shown that the particle size distribution is strongly dependent on the processing conditions. Moreover, this paper discusses the opportunities and limitations of the use of ALD in the synthesis of nanocatalysts.

CuO-Functionalized Silicon Photoanodes for Photoelectrochemical Water Splitting Devices

One main difficulty for the technological development of photoelectrochemical (PEC) water splitting (WS) devices is the fabrication of active, stable and cost-effective photoelectrodes that ensure high performance. Here, we report the development of a CuO/Silicon based photoanode, which shows an onset potential for the water oxidation of 0.53 V vs SCE at pH 9, that is, an overpotential of 75 mV, and high stability above 10 h. These values account for a photovoltage of 420 mV due to the absorbed photons by silicon, as proven by comparing with analogous CuO/FTO electrodes that are not photoactive. The photoanodes have been fabricated by sputtering a thin film of Cu(0) on commercially available n-type Si wafers, followed by a photoelectrochemical treatment in basic pH conditions. The resulting CuO/Cu layer acts as (1) protective layer to avoid the corrosion of nSi, (2) p-type hole conducting layer for efficient charge separation and transportation, and (3) electrocatalyst to reduce the overpotential of the water oxidation reaction. The low cost, low toxicity, and good performance of CuO-based coatings can be an attractive solution to functionalize unstable materials for solar energy conversion.

Photoelectrochemical study of p-GaP(100)|ZnO|AuNP devices: strategies for enhanced electron transfer and aqueous catalysis

We report a photocathode device consisting of GaP, a metal oxide (Al₂O₃ or ZnO), a phosphonate-C₁₂-thiol monolayer, and gold nanoparticles (AuNPs).

Amorphous Ti(iv)-modified Bi2WO6 with enhanced photocatalytic performance

Amorphous TiO₂ can function as an excellent hole cocatalyst to greatly improve the photocatalytic performance of a Bi₂WO₆ photocatalyst.

Water oxidation by a soluble iron(iii)–cyclen complex: new findings

Herein, the role of iron oxide in the electrochemical water oxidation of an iron cyclen (cyclen = 1,4,7,10-tetraazacyclododecane) is considered.

Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes

Metal oxide protection layers for photoanodes may enable the development of large-scale solar fuel and solar chemical synthesis, but the poor photovoltages often reported so far will severely limit their performance. Here we report a novel observation of photovoltage loss associated with a charge extraction barrier imposed by the protection layer, and, by eliminating it, achieve photovoltages as high as 630 mV, the maximum reported so far for water-splitting silicon photoanodes. The loss mechanism is systematically probed in metal-insulator-semiconductor Schottky junction cells compared to buried junction p(+)n cells, revealing the need to maintain a characteristic hole density at the semiconductor/insulator interface. A leaky-capacitor model related to the dielectric properties of the protective oxide explains this loss, achieving excellent agreement with the data. From these findings, we formulate design principles for simultaneous optimization of built-in field, interface quality, and hole extraction to maximize the photovoltage of oxide-protected water-splitting anodes.

Transformation of zincblende nanoparticles into wurtzite microrods by a dissolution–regrowth process: an intergrowth homojunction with enhanced photocatalytic activity

A CdS intergrowth homojunction in the form of zincblende nanoparticle-decorated wurtzite microrods was prepared and showed superior activity for solar H₂production.

Quantum confined colloidal nanorod heterostructures for solar-to-fuel conversion

Colloidal one-dimensional (1D) semiconductor nanorods (NRs) offer the opportunity to simultaneously maintain quantum confinement in radial dimensions for tunable light absorptions and bulk like carrier transport in the axial direction for long-distance charge separations.

Stability and self-passivation of copper vanadate photoanodes under chemical, electrochemical, and photoelectrochemical operation

Self-passivation under operational conditions is observed for several copper vanadate photoanodes, demonstrating their viability for durable solar fuels devices.

Band engineering for efficient catalyst-substrate coupling for photoelectrochemical water splitting

To achieve an overall efficient solar water splitting device, not only the efficiencies of photo-converter and catalyst are decisive, but also their appropriate coupling must be considered.

α-Fe2O3 quantum dots: low-cost synthesis and photocatalytic oxygen evolution capabilities

Hematite quantum dots with an average size of 3 nm are synthesized by a facile microwave-assisted reverse micelle method.

Low-Temperature Atomic Layer Deposition of Crystalline and Photoactive Ultrathin Hematite Films for Solar Water Splitting

We developed a low-temperature atomic layer deposition route to deposit phase pure and crystalline hematite (α-Fe2O3) films at 230 °C without the need for postannealing. Homogenous and conformal deposition with good aspect ratio coverage was demonstrated on a nanostructured substrate and analyzed by transmission electron microscopy. These as-deposited α-Fe2O3 films were investigated as photoanodes for photoelectrochemical water oxidation and found to be highly photoactive. Combined with a TiO2 underlayer and a low-cost Ni(OH)2 catalyst, hematite films of less than 10 nm in thickness reached photocurrent densities of 0.3 mA cm(-2) at 1.23 V vs RHE and a photocurrent onset potential of less than 0.9 V vs RHE, previously unseen for films this thin and without high temperature annealing. In a thickness-dependent photoelectrochemical analysis, we identified a hematite thickness of only 10 nm to yield the highest internal quantum efficiency when using a suitable underlayer such as TiO2 that induces doping of the hematite film and reduces electron/hole recombination at the back contact. We find that, at high bias potentials, photocurrent density and quantum efficiency proportionally increase with light absorption in films thinner than 10 nm and are limited by the space charge layer width in thicker films. Thus, we propose to apply hematite films of 10 nm in thickness for future developments on suitable nanostructured conductive scaffolds that can now be extended to organic scaffolds due to our low-temperature process.