1
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Zhu M, Dong J, Du K, Li H, Jiang N, Xu Z, Zhao S, Liang Z, Song D, Qiao B. Organic ammonium salt assisted crystallization and defect passivation of a quasi-two-dimensional pure blue perovskite at the buried interface. Phys Chem Chem Phys 2024; 26:21147-21154. [PMID: 39072377 DOI: 10.1039/d4cp01651c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/30/2024]
Abstract
Quasi-two-dimensional (quasi-2D) perovskites exhibit excellent performance in light-emitting diodes (LEDs). However, the quality of perovskite films prepared via the solution method is significantly impacted by the enormous number of defects that unavoidably form at the grain boundaries and interfaces during the precursor to the crystal formation process. Here, we propose a strategy to assist perovskite crystallization and defect passivation at the buried interface through interfacial modification. The organic ammonium salt, ethylamine chloride (EACl), is added to the hole transport material and modifies the buried interface of the perovskite film. EACl introduces the nucleation sites for perovskite precursors, and promotes the crystallization process of the perovskite grains, contributing to the formation of high-quality perovskite films. At the same time, the presence of Lewis base (-NH2) groups in EACl and their lone electron pairs effectively inactivate unlocated Pb2+ ions at the buried interface, thereby reducing non-radiative recombination. In addition, chloride ions help to mitigate defects and to improve the morphology of perovskite films. Devices with this modification show a higher performance than control devices on all metrics. This work proposes a facile but efficient way for improving quasi-2D pure blue perovskite crystallization and growth.
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Affiliation(s)
- Mingyi Zhu
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Jie Dong
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Kang Du
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Huitian Li
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Na Jiang
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Zheng Xu
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Suling Zhao
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Zhiqin Liang
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Dandan Song
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
| | - Bo Qiao
- Key Laboratory of Luminescence and Optical Information, Beijing Jiaotong University, Ministry of Education, Beijing 100044, China.
- Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
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2
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Li M, Liu M, Qi F, Lin FR, Jen AKY. Self-Assembled Monolayers for Interfacial Engineering in Solution-Processed Thin-Film Electronic Devices: Design, Fabrication, and Applications. Chem Rev 2024; 124:2138-2204. [PMID: 38421811 DOI: 10.1021/acs.chemrev.3c00396] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
Interfacial engineering has long been a vital means of improving thin-film device performance, especially for organic electronics, perovskites, and hybrid devices. It greatly facilitates the fabrication and performance of solution-processed thin-film devices, including organic field effect transistors (OFETs), organic solar cells (OSCs), perovskite solar cells (PVSCs), and organic light-emitting diodes (OLEDs). However, due to the limitation of traditional interfacial materials, further progress of these thin-film devices is hampered particularly in terms of stability, flexibility, and sensitivity. The deadlock has gradually been broken through the development of self-assembled monolayers (SAMs), which possess distinct benefits in transparency, diversity, stability, sensitivity, selectivity, and surface passivation ability. In this review, we first showed the evolution of SAMs, elucidating their working mechanisms and structure-property relationships by assessing a wide range of SAM materials reported to date. A comprehensive comparison of various SAM growth, fabrication, and characterization methods was presented to help readers interested in applying SAM to their works. Moreover, the recent progress of the SAM design and applications in mainstream thin-film electronic devices, including OFETs, OSCs, PVSCs and OLEDs, was summarized. Finally, an outlook and prospects section summarizes the major challenges for the further development of SAMs used in thin-film devices.
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Affiliation(s)
- Mingliang Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Ming Liu
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Feng Qi
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Francis R Lin
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Alex K-Y Jen
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Department of Chemistry, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, United States
- State Key Laboratory of Marine Pollution, City University of Hong Kong, Kowloon, Hong Kong 999077, China
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3
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Jiang W, Liu M, Li Y, Lin FR, Jen AKY. Rational molecular design of multifunctional self-assembled monolayers for efficient hole selection and buried interface passivation in inverted perovskite solar cells. Chem Sci 2024; 15:2778-2785. [PMID: 38404377 PMCID: PMC10882494 DOI: 10.1039/d3sc05485c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2023] [Accepted: 01/16/2024] [Indexed: 02/27/2024] Open
Abstract
Self-assembled monolayers (SAMs) have been widely employed as the bottom-contact hole-selective layer (HSL) in inverted perovskite solar cells (PSCs). Besides manipulating the electrical properties, molecularly engineering the SAM provides an opportunity to modulate the perovskite buried interface. Here, we successfully introduced Lewis-basic oxygen and sulfur heteroatoms through rational molecular design of asymmetric SAMs to obtain two novel multifunctional SAMs, CbzBF and CbzBT. Detailed characterization of single-crystal structures and device interfaces shows that enhanced packing, more effective ITO work function adjustment, and buried interface passivation were successfully achieved. Consequently, the champion PSC employing CbzBT showed an excellent power conversion efficiency (PCE) of 24.0% with a high fill factor of 84.41% and improved stability. This work demonstrates the feasibility of introducing defect-passivating heterocyclic groups into SAM molecules to help passivate the interfacial defects in PSCs. The insights gained from this molecular design strategy will accelerate the development of new multifunctional SAM HSLs for efficient PSCs.
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Affiliation(s)
- Wenlin Jiang
- Department of Materials Science and Engineering, City University of Hong Kong Kowloon 999077 Hong Kong
- Department of Chemistry, City University of Hong Kong Kowloon 999077 Hong Kong
- Hong Kong Institute for Clean Energy, City University of Hong Kong Kowloon 999077 Hong Kong
| | - Ming Liu
- Department of Materials Science and Engineering, City University of Hong Kong Kowloon 999077 Hong Kong
- Hong Kong Institute for Clean Energy, City University of Hong Kong Kowloon 999077 Hong Kong
| | - Yanxun Li
- Department of Materials Science and Engineering, City University of Hong Kong Kowloon 999077 Hong Kong
- Hong Kong Institute for Clean Energy, City University of Hong Kong Kowloon 999077 Hong Kong
| | - Francis R Lin
- Department of Chemistry, City University of Hong Kong Kowloon 999077 Hong Kong
- Hong Kong Institute for Clean Energy, City University of Hong Kong Kowloon 999077 Hong Kong
| | - Alex K-Y Jen
- Department of Materials Science and Engineering, City University of Hong Kong Kowloon 999077 Hong Kong
- Department of Chemistry, City University of Hong Kong Kowloon 999077 Hong Kong
- Hong Kong Institute for Clean Energy, City University of Hong Kong Kowloon 999077 Hong Kong
- State Key Laboratory of Marine Pollution, City University of Hong Kong Kowloon 999077 Hong Kong
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4
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Zhao Y, Li M, Qin X, Yang P, Zhang WH, Wei Z. Efficient Perovskite Light-Emitting Diodes by Buried Interface Modification with Triphenylphosphine Oxide. ACS APPLIED MATERIALS & INTERFACES 2023; 15:3644-3650. [PMID: 36608314 DOI: 10.1021/acsami.2c19123] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Metal halide perovskite films are prepared mainly by solution-based methods. However, the preparation process is prone to produce massive defects at the interface between the perovskite emitting layer and the charge transport layers, limiting the perovskite light-emitting diode device performance. Aiming at this problem, researchers have proposed many effective strategies to passivate these interface defects. However, most previous research studies only focus on modifying the perovskite top interface, and very few reports deal with the buried interface. Here, we deposited triphenylphosphine oxide (TPPO) molecules between the perovskite and the hole transport layer (HTL) and realized the buried interface modification. Adding TPPO avoids the contact recombination of the perovskite and HTL and improves the film quality by increasing the substrate wettability. Moreover, the lone pair electrons of P═O can interact with the uncoordinated lead (Pb2+) of the perovskite and passivate halogen vacancy defects, and the insulation property of TPPO helps to balance the injection of holes and electrons. As a result, a maximum external quantum efficiency (EQEmax) of 21.01% was obtained with an average of 18.4 ± 0.9% over 30 devices, and the device reproducibility was greatly enhanced.
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Affiliation(s)
- Yaping Zhao
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Mingliang Li
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu 610200, China
| | - Xiangqian Qin
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - PanPan Yang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
| | - Wen-Hua Zhang
- Sichuan Research Center of New Materials, Institute of Chemical Materials, China Academy of Engineering Physics, Chengdu 610200, China
| | - Zhanhua Wei
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen 361021, China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen 361005, China
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5
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Jiang W, Li F, Li M, Qi F, Lin FR, Jen AKY. π-Expanded Carbazoles as Hole-Selective Self-Assembled Monolayers for High-Performance Perovskite Solar Cells. Angew Chem Int Ed Engl 2022; 61:e202213560. [PMID: 36300589 DOI: 10.1002/anie.202213560] [Citation(s) in RCA: 36] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/14/2022] [Indexed: 11/24/2022]
Abstract
Carbazole-derived self-assembled monolayers (SAMs) are promising hole-selective materials for inverted perovskite solar cells (PSCs). However, they often possess small dipoles which prohibit them from effectively modulating the workfunction of ITO substrate, limiting the PSC photovoltage. Moreover, their properties can be drastically affected by even subtle structural modifications, undermining the final PSC performance. Here, we designed two carbazole-derived SAMs, CbzPh and CbzNaph through asymmetric or helical π-expansion for improved molecular dipole moment and strengthened π-π interaction. The helical π-expanded CbzNaph has the largest dipole, forming densely packed and ordered monolayer, facilitated by the highly ordered assembly observed in its π-scaffold's single crystal. These synergistically modulate the perovskite crystallization atop and tune the ITO workfunction. Consequently, the champion PSC employing CbzNaph showed an excellent 24.1 % efficiency and improved stability.
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Affiliation(s)
- Wenlin Jiang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong.,Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong.,Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Fengzhu Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong.,Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong.,Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Mingliang Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong.,Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong.,Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Feng Qi
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong.,Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Francis R Lin
- Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong.,Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, 999077, Hong Kong
| | - Alex K-Y Jen
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong.,Department of Chemistry, City University of Hong Kong, Kowloon, 999077, Hong Kong.,Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon, 999077, Hong Kong
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6
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Deng X, Qi F, Li F, Wu S, Lin FR, Zhang Z, Guan Z, Yang Z, Lee C, Jen AK. Co‐assembled Monolayers as Hole‐Selective Contact for High‐Performance Inverted Perovskite Solar Cells with Optimized Recombination Loss and Long‐Term Stability. Angew Chem Int Ed Engl 2022; 61:e202203088. [DOI: 10.1002/anie.202203088] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/26/2022] [Indexed: 11/08/2022]
Affiliation(s)
- Xiang Deng
- Department of Materials Science and Engineering City University of Hong Kong Kowloon 999077 Hong Kong
- Department of Chemistry City University of Hong Kong Kowloon 999077 Hong Kong
- Hong Kong Institute for Clean Energy City University of Hong Kong Kowloon 999077 Hong Kong
| | - Feng Qi
- Department of Materials Science and Engineering City University of Hong Kong Kowloon 999077 Hong Kong
- Department of Chemistry City University of Hong Kong Kowloon 999077 Hong Kong
- Hong Kong Institute for Clean Energy City University of Hong Kong Kowloon 999077 Hong Kong
| | - Fengzhu Li
- Department of Materials Science and Engineering City University of Hong Kong Kowloon 999077 Hong Kong
- Department of Chemistry City University of Hong Kong Kowloon 999077 Hong Kong
- Hong Kong Institute for Clean Energy City University of Hong Kong Kowloon 999077 Hong Kong
| | - Shengfan Wu
- Department of Materials Science and Engineering City University of Hong Kong Kowloon 999077 Hong Kong
- Hong Kong Institute for Clean Energy City University of Hong Kong Kowloon 999077 Hong Kong
| | - Francis R. Lin
- Department of Chemistry City University of Hong Kong Kowloon 999077 Hong Kong
- Hong Kong Institute for Clean Energy City University of Hong Kong Kowloon 999077 Hong Kong
| | - Zhuomin Zhang
- Department of Mechanical Engineering City University of Hong Kong Kowloon 999077 Hong Kong
| | - Zhiqiang Guan
- Department of Chemistry City University of Hong Kong Kowloon 999077 Hong Kong
| | - Zhengbao Yang
- Department of Mechanical Engineering City University of Hong Kong Kowloon 999077 Hong Kong
| | - Chun‐Sing Lee
- Department of Chemistry City University of Hong Kong Kowloon 999077 Hong Kong
| | - Alex K.‐Y. Jen
- Department of Materials Science and Engineering City University of Hong Kong Kowloon 999077 Hong Kong
- Department of Chemistry City University of Hong Kong Kowloon 999077 Hong Kong
- Department of Materials Science & Engineering University of Washington Seattle WA 98195 USA
- Hong Kong Institute for Clean Energy City University of Hong Kong Kowloon 999077 Hong Kong
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7
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Deng X, Qi F, Li F, Wu S, Lin FR, Zhang Z, Guan Z, Yang Z, Lee CS, Jen AKY. Co‐assembled Monolayers as Hole ‐se lective Contact for High‐Performance Inverted Perovskite Solar Cells with Optimized Recombination Loss and Long‐Term Stability. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202203088] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Xiang Deng
- CityU: City University of Hong Kong Department of Materials Science and Engineering Tat Chee Avenue Kowloon, Hong Kong HONG KONG
| | - Feng Qi
- CityU: City University of Hong Kong Department of Chemistry HONG KONG
| | - Fengzhu Li
- CityU: City University of Hong Kong Department of Materials Science and Engineering HONG KONG
| | - Shengfan Wu
- CityU: City University of Hong Kong Department of Materials Science and Engineering HONG KONG
| | - Francis R. Lin
- CityU: City University of Hong Kong Department of Chemistry HONG KONG
| | - Zhuomin Zhang
- CityU: City University of Hong Kong Department of Mechanical Engineering HONG KONG
| | - Zhiqiang Guan
- CityU: City University of Hong Kong Department of Chemistry HONG KONG
| | - Zhengbao Yang
- CityU: City University of Hong Kong Department of Mechanical Engineering HONG KONG
| | - Chun-Sing Lee
- CityU: City University of Hong Kong Department of Chemistry HONG KONG
| | - Alex K.-Y. Jen
- City University of Hong Kong Chemistry Tat Chee Ave 999077 Kowloon CHINA
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8
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Hatt T, Bartsch J, Davis V, Richter A, Kluska S, Glunz SW, Glatthaar M, Fischer A. Hydrophobic AlO x Surfaces by Adsorption of a SAM on Large Areas for Application in Solar Cell Metallization Patterning. ACS APPLIED MATERIALS & INTERFACES 2021; 13:5803-5813. [PMID: 33492948 DOI: 10.1021/acsami.0c20134] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
A resist-free metallization of copper-plated contacts is attractive to replace screen-printed silver contacts and is demonstrated on large-area silicon heterojunction (SHJ) solar cells. In our approach, a self-passivated Al layer is used as a mask during the plating process. In this study, Al/AlOx or Al2O3 plating masks are further functionalized by a self-assembled monolayer (SAM) of octadecyl phosphonic acid (ODPA). The ODPA adsorption is characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy in attenuated total reflectance (FTIR-ATR) (in situ), and contact angle measurements to link the surface chemical composition to wetting properties. The SAM leads to homogeneous hydrophobic surfaces on large-area textured solar cells and planar flexible printed circuit boards (PCBs), which allows reproducible patterning of narrow lines by inkjet printing of an etchant. Selective copper plating is then performed to complete the metallization process and produce Cu contacts in the patterned areas. Silicon heterojunction (SHJ) solar cells metallized by the complete sequence reached up to 22.4% efficiency on a large area.
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Affiliation(s)
- Thibaud Hatt
- Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg, Germany
| | - Jonas Bartsch
- Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg, Germany
| | - Victoria Davis
- Institute of Inorganic and Analytical Chemistry, University of Freiburg, Albertstraße 21, 79104 Freiburg, Germany
- Cluster of Excellence livMatS@FIT-Freiburg Center for Interactive Materials and Bioinspired Technologies, University of Freiburg, Georges-Köhler-Allee 105, 79110 Freiburg, Germany
| | - Armin Richter
- Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg, Germany
| | - Sven Kluska
- Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg, Germany
| | - Stefan W Glunz
- Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg, Germany
- Laboratory for Photovoltaic Energy Conversion, Department of Sustainable Systems Engineering, Albert-Ludwigs-Universität Freiburg, Emmy-Noether-Str. 2, 79110 Freiburg, Germany
| | - Markus Glatthaar
- Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg, Germany
| | - Anna Fischer
- Institute of Inorganic and Analytical Chemistry, University of Freiburg, Albertstraße 21, 79104 Freiburg, Germany
- Cluster of Excellence livMatS@FIT-Freiburg Center for Interactive Materials and Bioinspired Technologies, University of Freiburg, Georges-Köhler-Allee 105, 79110 Freiburg, Germany
- Freiburg Materials Research Center (FMF), University of Freiburg, Stefan-Meier-Straße 21, 79104 Freiburg, Germany
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9
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Chen H, Zhang W, Li M, He G, Guo X. Interface Engineering in Organic Field-Effect Transistors: Principles, Applications, and Perspectives. Chem Rev 2020; 120:2879-2949. [PMID: 32078296 DOI: 10.1021/acs.chemrev.9b00532] [Citation(s) in RCA: 99] [Impact Index Per Article: 24.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Heterogeneous interfaces that are ubiquitous in optoelectronic devices play a key role in the device performance and have led to the prosperity of today's microelectronics. Interface engineering provides an effective and promising approach to enhancing the device performance of organic field-effect transistors (OFETs) and even developing new functions. In fact, researchers from different disciplines have devoted considerable attention to this concept, which has started to evolve from simple improvement of the device performance to sophisticated construction of novel functionalities, indicating great potential for further applications in broad areas ranging from integrated circuits and energy conversion to catalysis and chemical/biological sensors. In this review article, we provide a timely and comprehensive overview of current efficient approaches developed for building various delicate functional interfaces in OFETs, including interfaces within the semiconductor layers, semiconductor/electrode interfaces, semiconductor/dielectric interfaces, and semiconductor/environment interfaces. We also highlight the major contributions and new concepts of integrating molecular functionalities into electrical circuits, which have been neglected in most previous reviews. This review will provide a fundamental understanding of the interplay between the molecular structure, assembly, and emergent functions at the molecular level and consequently offer novel insights into designing a new generation of multifunctional integrated circuits and sensors toward practical applications.
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Affiliation(s)
- Hongliang Chen
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Weining Zhang
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Mingliang Li
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
| | - Gen He
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China
| | - Xuefeng Guo
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P. R. China.,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China.,Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, P. R. China
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10
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Li Y, Kang Z, Deng X, Yang G, Yu S, Mo J, Talley DA, Jennings GK, Zhang FY. Wettability effects of thin titanium liquid/gas diffusion layers in proton exchange membrane electrolyzer cells. Electrochim Acta 2019. [DOI: 10.1016/j.electacta.2018.12.162] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
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11
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Lakhotiya H, Nazir A, Roesgaard S, Eriksen E, Christiansen J, Bondesgaard M, van Veggel FCJM, Iversen BB, Balling P, Julsgaard B. Resonant Plasmon-Enhanced Upconversion in Monolayers of Core-Shell Nanocrystals: Role of Shell Thickness. ACS APPLIED MATERIALS & INTERFACES 2019; 11:1209-1218. [PMID: 30525411 DOI: 10.1021/acsami.8b15564] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
The upconversion luminescence (UCL) of colloidal lanthanide-doped upconversion nanocrystals (UCNCs) can be improved either by precise encapsulation of the surface by optically inert shells around the core, by an alteration of the nearby environment via metal nanoparticles, or by a combination of both. Considering their potential importance in crystalline silicon photovoltaics, the present study investigates both effects for two-dimensional arrangements of UCNCs. Using excitation light of 1500 nm wavelength, we study the variation in the upconversion luminescence from an Er3+-doped NaYF4 core as a function of the thickness of a NaLuF4 shell in colloidal solutions as well as in spin-cast-assisted self-assembled monolayers of UCNCs. The observed UCL yields and decay times of Er3+ ions of the UCNCs increase with increasing shell thickness in both cases, and nearly no variation in decay times is observed in the transition of the UCNCs from solution to film configurations. The luminescence efficiency of the UCNC monolayers is further enhanced by electron-beam-lithographic-designed Au nanodiscs deposited either on top of or buried within the monolayer. It is observed that the improvement by the nanocrystal shells is greater than that of the Au nanodiscs.
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Affiliation(s)
- Harish Lakhotiya
- Department of Physics and Astronomy , Aarhus University , DK-8000 Aarhus C , Denmark
| | - Adnan Nazir
- Department of Physics and Astronomy , Aarhus University , DK-8000 Aarhus C , Denmark
| | - Søren Roesgaard
- Department of Physics and Astronomy , Aarhus University , DK-8000 Aarhus C , Denmark
| | - Emil Eriksen
- Department of Physics and Astronomy , Aarhus University , DK-8000 Aarhus C , Denmark
| | - Jeppe Christiansen
- Department of Physics and Astronomy , Aarhus University , DK-8000 Aarhus C , Denmark
| | - Martin Bondesgaard
- Department of Chemistry , Aarhus University , DK-8000 Aarhus C , Denmark
| | - Frank C J M van Veggel
- Department of Chemistry , University of Victoria , Victoria , British Columbia V8W 2Y2 , Canada
| | - Bo Brummerstedt Iversen
- Department of Chemistry , Aarhus University , DK-8000 Aarhus C , Denmark
- Interdisciplinary Nanoscience Center (iNANO) , Aarhus University , DK-8000 Aarhus C , Denmark
| | - Peter Balling
- Department of Physics and Astronomy , Aarhus University , DK-8000 Aarhus C , Denmark
- Interdisciplinary Nanoscience Center (iNANO) , Aarhus University , DK-8000 Aarhus C , Denmark
| | - Brian Julsgaard
- Department of Physics and Astronomy , Aarhus University , DK-8000 Aarhus C , Denmark
- Interdisciplinary Nanoscience Center (iNANO) , Aarhus University , DK-8000 Aarhus C , Denmark
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12
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Nie HY. Self-assembled monolayers of octadecylphosphonic acid and polymer films: Surface chemistry and chemical structures studied by time-of-flight secondary ion mass spectrometry. SURF INTERFACE ANAL 2017. [DOI: 10.1002/sia.6296] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Heng-Yong Nie
- Surface Science Western; The University of Western Ontario; London Ontario N6G 0J3 Canada
- Department of Physics and Astronomy; University of Western Ontario; London Ontario N6A 3K7 Canada
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13
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Cattani-Scholz A. Functional Organophosphonate Interfaces for Nanotechnology: A Review. ACS APPLIED MATERIALS & INTERFACES 2017; 9:25643-25655. [PMID: 28671811 DOI: 10.1021/acsami.7b04382] [Citation(s) in RCA: 20] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Optimization of interfaces in inorganic-organic device systems depends strongly on understanding both the molecular processes that are involved in surface modification and the effects that such modifications have on the electronic states of the material. In particular, the last several years have seen passivation and functionalization of semiconductor surfaces to be strategies by which to realize devices with superior function by controlling Fermi level energies, band-gap magnitudes, and work functions of semiconducting substrates. Among all of the synthetic routes and deposition methods available for the optimization of functional interfaces in hybrid systems, organophosphonate chemistry has been found to be a powerful tool to control at the molecular level the properties of materials in many different applications. In this Review, we focus on the relevance of organophosphonate chemistry in nanotechnology, giving an overview about some recent advances in surface modification, interface engineering, nanostructure optimization, and biointegration.
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Affiliation(s)
- Anna Cattani-Scholz
- Walter Schottky Institut and Technische Universität München , 85748 Garching, Germany
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14
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Schmaltz T, Sforazzini G, Reichert T, Frauenrath H. Self-Assembled Monolayers as Patterning Tool for Organic Electronic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1605286. [PMID: 28160336 DOI: 10.1002/adma.201605286] [Citation(s) in RCA: 38] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/30/2016] [Revised: 11/17/2016] [Indexed: 06/06/2023]
Abstract
The patterning of functional materials represents a crucial step for the implementation of organic semiconducting materials into functional devices. Classical patterning techniques such as photolithography or shadow masking exhibit certain limitations in terms of choice of materials, processing techniques and feasibility for large area fabrication. The use of self-assembled monolayers (SAMs) as a patterning tool offers a wide variety of opportunities, from the region-selective deposition of active components to guiding the crystallization direction. Here, we discuss general techniques and mechanisms for SAM-based patterning and show that all necessary components for organic electronic devices, i.e., conducting materials, dielectrics, organic semiconductors, and further functional layers can be patterned with the use of self-assembled monolayers. The advantages and limitations, and potential further applications of patterning approaches based on self-assembled monolayers are critically discussed.
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Affiliation(s)
- Thomas Schmaltz
- Institute of Materials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Macromolecular and Organic Materials, EPFL-STI-IMX-LMOM, Station 12, 1015, Lausanne, Switzerland
| | - Giuseppe Sforazzini
- Institute of Materials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Macromolecular and Organic Materials, EPFL-STI-IMX-LMOM, Station 12, 1015, Lausanne, Switzerland
| | - Thomas Reichert
- Institute of Materials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Macromolecular and Organic Materials, EPFL-STI-IMX-LMOM, Station 12, 1015, Lausanne, Switzerland
| | - Holger Frauenrath
- Institute of Materials, Ecole Polytechnique Fédérale de Lausanne (EPFL), Laboratory of Macromolecular and Organic Materials, EPFL-STI-IMX-LMOM, Station 12, 1015, Lausanne, Switzerland
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15
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Bulgarevich K, Sakamoto K, Minari T, Yasuda T, Miki K. Spatially Uniform Thin-Film Formation of Polymeric Organic Semiconductors on Lyophobic Gate Insulator Surfaces by Self-Assisted Flow-Coating. ACS APPLIED MATERIALS & INTERFACES 2017; 9:6237-6245. [PMID: 28117974 DOI: 10.1021/acsami.6b15398] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Surface hydrophobization by self-assembled monolayer formation is a powerful technique for improving the performance of organic field-effect transistors (OFETs). However, organic thin-film formation on such a surface by solution processing often fails due to the repellent property of the surface against common organic solvents. Here, a scalable unidirectional coating technique that can solve this problem, named self-assisted flow-coating, is reported. Producing a specially designed lyophobic-lyophilic pattern on the lyophobic surface enables organic thin-film formation in the lyophobic surface areas by flow-coating. To demonstrate the usefulness of this technique, OFET arrays with an active layer of poly(2,5-bis(3-hexadecylthiophene-2-yl)thieno[3,2-b]thiophene) are fabricated. The ideal transfer curves without hysteresis behavior are obtained for all OFETs. The average field-effect hole mobility in the saturation regime is 0.273 and 0.221 cm2·V-1·s-1 for the OFETs with the channels parallel and perpendicular to the flow-coating direction, respectively, and the device-to-device variation is less than 3% for each OFET set. Very small device-to-device variation is also obtained for the on-state current, threshold voltage, and subthreshold swing. These results indicate that the self-assisted flow-coating is a promising coating technique to form spatially uniform thin films of polymeric organic semiconductors on lyophobic gate insulator surfaces.
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Affiliation(s)
- Kirill Bulgarevich
- National Institute for Materials Science , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Faculty of Pure and Applied Sciences, University of Tsukuba , 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
| | - Kenji Sakamoto
- National Institute for Materials Science , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takeo Minari
- National Institute for Materials Science , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Takeshi Yasuda
- National Institute for Materials Science , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
| | - Kazushi Miki
- National Institute for Materials Science , 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
- Faculty of Pure and Applied Sciences, University of Tsukuba , 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571, Japan
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16
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Yu F, Wu S, Wang X, Zhang G, Lu H, Qiu L. Flexible and low-voltage organic phototransistors. RSC Adv 2017. [DOI: 10.1039/c6ra28821a] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
A stripping procedure was demonstrated to prepare ultra-smooth gate dielectric for flexible and low-voltage organic phototransistors.
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Affiliation(s)
- Fanfan Yu
- Key Lab of Special Display Technology
- Ministry of Education
- National Engineering Lab of Special Display Technology
- State Key Lab of Advanced Display Technology
- Academy of Opto-Electronic Technology
| | - Shaohua Wu
- Key Lab of Special Display Technology
- Ministry of Education
- National Engineering Lab of Special Display Technology
- State Key Lab of Advanced Display Technology
- Academy of Opto-Electronic Technology
| | - Xiaohong Wang
- Key Lab of Special Display Technology
- Ministry of Education
- National Engineering Lab of Special Display Technology
- State Key Lab of Advanced Display Technology
- Academy of Opto-Electronic Technology
| | - Guobing Zhang
- Key Lab of Special Display Technology
- Ministry of Education
- National Engineering Lab of Special Display Technology
- State Key Lab of Advanced Display Technology
- Academy of Opto-Electronic Technology
| | - Hongbo Lu
- Key Lab of Special Display Technology
- Ministry of Education
- National Engineering Lab of Special Display Technology
- State Key Lab of Advanced Display Technology
- Academy of Opto-Electronic Technology
| | - Longzhen Qiu
- Key Lab of Special Display Technology
- Ministry of Education
- National Engineering Lab of Special Display Technology
- State Key Lab of Advanced Display Technology
- Academy of Opto-Electronic Technology
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17
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Konishi T, Yamaguchi K. Surface Control of a Photoresponsive Self-Assembled Monolayer and Selective Deposition of Ag Nanoparticulate Ink. BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN 2016. [DOI: 10.1246/bcsj.20150403] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
Affiliation(s)
| | - Kazuo Yamaguchi
- Department of Chemistry, Kanagawa University
- Research Institute for Photofunctionalized Materials, Kanagawa University
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18
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Feng L, Tang W, Zhao J, Yang R, Hu W, Li Q, Wang R, Guo X. Unencapsulated Air-stable Organic Field Effect Transistor by All Solution Processes for Low Power Vapor Sensing. Sci Rep 2016; 6:20671. [PMID: 26861412 PMCID: PMC4748241 DOI: 10.1038/srep20671] [Citation(s) in RCA: 91] [Impact Index Per Article: 11.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/28/2015] [Accepted: 01/11/2016] [Indexed: 11/28/2022] Open
Abstract
With its excellent mechanical flexibility, low-cost and low-temperature processing, the solution processed organic field-effect transistor (OFET) is a promising platform technology for developing ubiquitous sensor applications in digital health, environment monitoring and Internet of Things. However, a contradiction between achieving low voltage operation and having stable performance severely hinder the technology to become commercially viable. This work shows that, by reducing the sub-gap density of states (DOS) at the channel for low operation voltage and using a proper low-k non-polar polymer dielectric layer, such an issue can be addressed. Stable electrical properties after either being placed for weeks or continuously prolonged bias stressing for hours in ambient air are achieved for all solution processed unencapsulated OFETs with the channel being exposed to the ambient air for analyte detection. The fabricated device presents a steep subthreshold swing less than 100 mV/decade, and an ON/OFF ratio of 106 at a voltage swing of 3 V. The low voltage and stable operation allows the sensor made of the OFET to be incorporated into a battery-powered electronic system for continuously reliable sensing of ammonia vapor in ambient air with very small power consumption of about 50 nW.
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Affiliation(s)
- Linrun Feng
- National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Wei Tang
- National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jiaqing Zhao
- National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Ruozhang Yang
- National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Wei Hu
- National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Qiaofeng Li
- National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Ruolin Wang
- National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xiaojun Guo
- National Engineering Laboratory of TFT-LCD Materials and Technologies, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
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19
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Li Z, Yuan Y. Preparation and characterization of superhydrophobic composite coatings on a magnesium–lithium alloy. RSC Adv 2016. [DOI: 10.1039/c6ra13194h] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
We report a superhydrophobic organophosphonate composite coating on a magnesium–lithium alloy surface, which exhibits excellent water-repellent and corrosion resistance properties.
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Affiliation(s)
- Zhijun Li
- Department of Chemistry
- Queen's University
- Kingston
- Canada
| | - Yi Yuan
- Department of Chemistry
- Zhejiang University
- Hangzhou
- P. R. China
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20
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Ward JW, Lamport ZA, Jurchescu OD. Versatile Organic Transistors by Solution Processing. Chemphyschem 2015; 16:1118-32. [DOI: 10.1002/cphc.201402757] [Citation(s) in RCA: 50] [Impact Index Per Article: 5.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2014] [Indexed: 11/06/2022]
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21
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Sung S, Park S, Cha S, Lee WJ, Kim CH, Yoon MH. Direct patterning of sol–gel metal oxide semiconductor and dielectric films via selective surface wetting. RSC Adv 2015. [DOI: 10.1039/c5ra04515k] [Citation(s) in RCA: 37] [Impact Index Per Article: 4.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Simple, photolithography-free, direct patterning of solution-processed metal oxide materials was developed for fabricating all-solution low-voltage metal oxide thin-film transistor arrays.
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Affiliation(s)
- Sujin Sung
- School of Materials Science and Engineering
- Gwangju Institute of Science and Technology
- Gwangju 500-712
- Republic of Korea
| | - Sungjun Park
- School of Materials Science and Engineering
- Gwangju Institute of Science and Technology
- Gwangju 500-712
- Republic of Korea
| | - Seungbok Cha
- School of Materials Science and Engineering
- Gwangju Institute of Science and Technology
- Gwangju 500-712
- Republic of Korea
| | - Won-June Lee
- School of Materials Science and Engineering
- Gwangju Institute of Science and Technology
- Gwangju 500-712
- Republic of Korea
| | - Chang-Hyun Kim
- School of Materials Science and Engineering
- Gwangju Institute of Science and Technology
- Gwangju 500-712
- Republic of Korea
- Research Institute for Solar and Sustainable Energies
| | - Myung-Han Yoon
- School of Materials Science and Engineering
- Gwangju Institute of Science and Technology
- Gwangju 500-712
- Republic of Korea
- Research Institute for Solar and Sustainable Energies
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22
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Baio JE, Jaye C, Fischer DA, Weidner T. High-throughput analysis of molecular orientation on surfaces by NEXAFS imaging of curved sample arrays. ACS COMBINATORIAL SCIENCE 2014; 16:449-53. [PMID: 25046426 PMCID: PMC4608249 DOI: 10.1021/co5001162] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Near-edge X-ray absorption fine structure (NEXAFS) spectroscopy provides detailed information about the orientation and alignment of thin films. NEXAFS is a synchrotron-based technique-the availability of beam-time per user is typically limited to no more than a few weeks per year. The limited availability is currently a true barrier for using NEXAFS in combinatorial studies of molecular alignment. We have recently demonstrated how large area full field NEXAFS imaging allows users to pursue combinatorial studies of surface chemistry. Now we report an extension of this approach which allows the acquisition of orientation information from a single NEXAFS image. An array with 80 elements (samples), containing eight series of different surface modifications, was mounted on a curved substrate allowing the collection of NEXAFS spectra with a range of orientations with respect to the X-ray beam. Images collected from this array show how hyperspectral NEXAFS data collected from curved surfaces can be used for high-throughput molecular orientation analysis.
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Affiliation(s)
- Joe E. Baio
- Max Planck Institute for Polymer Research, 55128 Mainz, Germany
| | - Cherno Jaye
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Daniel A. Fischer
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Tobias Weidner
- Max Planck Institute for Polymer Research, 55128 Mainz, Germany
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23
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Boissezon R, Muller J, Beaugeard V, Monge S, Robin JJ. Organophosphonates as anchoring agents onto metal oxide-based materials: synthesis and applications. RSC Adv 2014. [DOI: 10.1039/c4ra05414h] [Citation(s) in RCA: 65] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/14/2023] Open
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24
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Photopatterning of self assembled monolayers on oxide surfaces for the selective attachment of biomolecules. Biosens Bioelectron 2014; 53:82-9. [DOI: 10.1016/j.bios.2013.09.001] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/23/2013] [Revised: 08/29/2013] [Accepted: 09/02/2013] [Indexed: 11/21/2022]
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25
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Self-Assembled Monolayers of Phosphonic Acids with Enhanced Surface Energy for High-Performance Solution-Processed N-Channel Organic Thin-Film Transistors. Angew Chem Int Ed Engl 2013. [DOI: 10.1002/ange.201300353] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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26
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Liu D, Xu X, Su Y, He Z, Xu J, Miao Q. Self-assembled monolayers of phosphonic acids with enhanced surface energy for high-performance solution-processed N-channel organic thin-film transistors. Angew Chem Int Ed Engl 2013; 52:6222-7. [PMID: 23650029 DOI: 10.1002/anie.201300353] [Citation(s) in RCA: 50] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/15/2013] [Indexed: 11/09/2022]
Affiliation(s)
- Danqing Liu
- Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China
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27
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Kang B, Lee WH, Cho K. Recent advances in organic transistor printing processes. ACS APPLIED MATERIALS & INTERFACES 2013; 5:2302-15. [PMID: 23446358 DOI: 10.1021/am302796z] [Citation(s) in RCA: 83] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Recent progress in organic field-effect transistor (OFET) printing processes is reviewed, and a perspective on the future of the field is discussed. The principles underlying the OFET printing techniques are introduced according to two categories: direct write printing and transfer printing. A comprehensive overview of the use of printing techniques in OFET production processes is also provided. Considerations for improving OFET device performance using printing processes are explored. Prior to OFET commercialization, the OFET printing techniques must satisfy several requirements, as discussed here.
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Affiliation(s)
- Boseok Kang
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea
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28
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Ma H, Acton O, Hutchins DO, Cernetic N, Jen AKY. Multifunctional phosphonic acid self-assembled monolayers on metal oxides as dielectrics, interface modification layers and semiconductors for low-voltage high-performance organic field-effect transistors. Phys Chem Chem Phys 2013; 14:14110-26. [PMID: 22767209 DOI: 10.1039/c2cp41557g] [Citation(s) in RCA: 128] [Impact Index Per Article: 11.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Insulating and semiconducting molecular phosphonic acid (PA) self-assembled monolayers (SAMs) have been developed for applications in organic field-effect transistors (OFETs) for low-power, low-cost flexible electronics. Multifunctional SAMs on ultrathin metal oxides, such as hafnium oxide and aluminum oxide, are shown to enable (1) low-voltage (sub 2 V) OFETs through dielectric and interface engineering on rigid and plastic substrates, (2) simultaneous one-component modification of source-drain and dielectric surfaces in bottom-contact OFETs, and (3) SAM-FETs based on molecular monolayer semiconductors. The combination of excellent dielectric and interfacial properties results in high-performance OFETs with low-subthreshold slopes down to 75 mV dec(-1), high I(on)/I(off) ratios of 10(5)-10(7), contact resistance down to 700 Ω cm, charge carrier mobilities of 0.1-4.6 cm(2) V(-1) s(-1), and general applicability to solution-processed and vacuum-deposited n-type and p-type organic and polymer semiconductors.
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Affiliation(s)
- Hong Ma
- Department of Materials Science and Engineering, University of Washington, Seattle, 98195, USA.
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29
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Hutchins DO, Weidner T, Baio J, Polishak B, Acton O, Cernetic N, Ma H, Jen AKY. Effects of self-assembled monolayer structural order, surface homogeneity and surface energy on pentacene morphology and thin film transistor device performance. JOURNAL OF MATERIALS CHEMISTRY. C 2013; 1:101-113. [PMID: 24086795 PMCID: PMC3786186 DOI: 10.1039/c2tc00378c] [Citation(s) in RCA: 30] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Abstract
A systematic study of six phosphonic acid (PA) self-assembled monolayers (SAMs) with tailored molecular structures is performed to evaluate their effectiveness as dielectric modifying layers in organic field-effect transistors (OFETs) and determine the relationship between SAM structural order, surface homogeneity, and surface energy in dictating device performance. SAM structures and surface properties are examined by near edge X-ray absorption fine structure (NEXAFS) spectroscopy, contact angle goniometry, and atomic force microscopy (AFM). Top-contact pentacene OFET devices are fabricated on SAM modified Si with a thermally grown oxide layer as a dielectric. For less ordered methyl- and phenyl-terminated alkyl ~(CH2)12 PA SAMs of varying surface energies, pentacene OFETs show high charge carrier mobilities up to 4.1 cm2 V-1 s-1. It is hypothesized that for these SAMs, mitigation of molecular scale roughness and subsequent control of surface homogeneity allow for large pentacene grain growth leading to high performance pentacene OFET devices. PA SAMs that contain bulky terminal groups or are highly crystalline in nature do not allow for a homogenous surface at a molecular level and result in charge carrier mobilities of 1.3 cm2 V-1 s-1 or less. For all molecules used in this study, no causal relationship between SAM surface energy and charge carrier mobility in pentacene FET devices is observed.
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Affiliation(s)
- Daniel Orrin Hutchins
- Department of Materials Science and Engineering, University of Washington, Box 352120, Seattle, WA 98195-2120, USA
| | - Tobias Weidner
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany
| | - Joe Baio
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany
| | - Brent Polishak
- Department of Chemistry, University of Washington, Box 351700, Seattle, WA 98195-1700, USA
| | - Orb Acton
- Department of Materials Science and Engineering, University of Washington, Box 352120, Seattle, WA 98195-2120, USA
| | - Nathan Cernetic
- Department of Materials Science and Engineering, University of Washington, Box 352120, Seattle, WA 98195-2120, USA
| | - Hong Ma
- Department of Materials Science and Engineering, University of Washington, Box 352120, Seattle, WA 98195-2120, USA
| | - Alex K.-Y. Jen
- Department of Materials Science and Engineering, University of Washington, Box 352120, Seattle, WA 98195-2120, USA
- Department of Chemistry, University of Washington, Box 351700, Seattle, WA 98195-1700, USA
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30
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Guerrero G, Alauzun JG, Granier M, Laurencin D, Mutin PH. Phosphonate coupling molecules for the control of surface/interface properties and the synthesis of nanomaterials. Dalton Trans 2013; 42:12569-85. [DOI: 10.1039/c3dt51193f] [Citation(s) in RCA: 172] [Impact Index Per Article: 15.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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31
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Thissen P, Vega A, Peixoto T, Chabal YJ. Controlled, low-coverage metal oxide activation of silicon for organic functionalization: unraveling the phosphonate bond. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2012; 28:17494-17505. [PMID: 23163566 DOI: 10.1021/la3038457] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
Deposition of thin films and grafting of organic molecules on semiconductor surfaces, particularly oxide surfaces, are widely studied as means of passivation and functionalization for a variety of applications. However, organic functionalization of silicon oxide is challenging, as the currently used molecules (silanes and phosphonates) do not form layers that are stable in aqueous environments and present challenges during the grafting process. For instance, the chemical grafting of phosphonates requires high temperature (140 °C) to perform. Modification of SiO(2) surfaces with metal oxides is an attractive alternative since strong bonds can be established between metal oxides and relevant molecules (silanes, phosphonates). While such modification is possible using vapor-phase methods, such as atomic layer deposition and physical vapor-phase deposition, wet chemical processing is inexpensive and technologically very attractive. We describe here a simple wet chemical method to deposit an ultrathin layer of metal oxide/hydroxide groups. Further, using a model surface with exactly one-third monolayer OH groups on oxide-free Si surfaces, the precise adsorption geometry on single Al(OH)(3) groups is shown to be bidentate, and the distance between the Al and P atoms is determined to be the main influencing parameter for a thermodynamically stable formation of the Al-O-P bond.
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Affiliation(s)
- Peter Thissen
- Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, United States.
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32
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Hutchins DO, Acton O, Weidner T, Cernetic N, Baio JE, Castner DG, Ma H, Jen AKY. Solid-State Densification of Spun-Cast Self-Assembled Monolayers for Use in Ultra-Thin Hybrid Dielectrics. APPLIED SURFACE SCIENCE 2012; 261:10.1016/j.apsusc.2012.09.013. [PMID: 24288423 PMCID: PMC3840438 DOI: 10.1016/j.apsusc.2012.09.013] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Ultra-thin self-assembled monolayer (SAM)-oxide hybrid dielectrics have gained significant interest for their application in low-voltage organic thin film transistors (OTFTs). A [8-(11-phenoxy-undecyloxy)-octyl]phosphonic acid (PhO-19-PA) SAM on ultrathin AlOx (2.5 nm) has been developed to significantly enhance the dielectric performance of inorganic oxides through reduction of leakage current while maintaining similar capacitance to the underlying oxide structure. Rapid processing of this SAM in ambient conditions is achieved by spin coating, however, as-cast monolayer density is not sufficient for dielectric applications. Thermal annealing of a bulk spun-cast PhO-19-PA molecular film is explored as a mechanism for SAM densification. SAM density, or surface coverage, and order are examined as a function of annealing temperature. These SAM characteristics are probed through atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and near edge X-ray absorption fine structure spectroscopy (NEXAFS). It is found that at temperatures sufficient to melt the as-cast bulk molecular film, SAM densification is achieved; leading to a rapid processing technique for high performance SAM-oxide hybrid dielectric systems utilizing a single wet processing step. To demonstrate low-voltage devices based on this hybrid dielectric (with leakage current density of 7.7×10-8 A cm-2 and capacitance density of 0.62 µF cm-2 at 3 V), pentacene thin-film transistors (OTFTs) are fabricated and yield sub 2 V operation and charge carrier mobilites of up to 1.1 cm2 V-1 s-1.
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Affiliation(s)
- Daniel O. Hutchins
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195
| | - Orb Acton
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195
| | - Tobias Weidner
- Department of Bioengineering, University of Washington, Seattle, Washington 98195
| | - Nathan Cernetic
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195
| | - Joe E. Baio
- Department of Chemical Engineering, University of Washington, Seattle, Washington 98195
| | - David G. Castner
- Department of Bioengineering, University of Washington, Seattle, Washington 98195
- Department of Chemical Engineering, University of Washington, Seattle, Washington 98195
| | - Hong Ma
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195
| | - Alex K.-Y. Jen
- Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195
- Department of Chemistry, University of Washington, Seattle, Washington 98195
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Structural and electronic characterization of self-assembled molecular nanoarchitectures by X-ray photoelectron spectroscopy. Anal Bioanal Chem 2012; 405:1479-95. [DOI: 10.1007/s00216-012-6394-8] [Citation(s) in RCA: 78] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/27/2012] [Revised: 08/27/2012] [Accepted: 08/27/2012] [Indexed: 01/22/2023]
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Vega A, Thissen P, Chabal YJ. Environment-controlled tethering by aggregation and growth of phosphonic acid monolayers on silicon oxide. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2012; 28:8046-8051. [PMID: 22554237 DOI: 10.1021/la300709n] [Citation(s) in RCA: 37] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
Phosphonic acid monolayers are being considered as versatile surface modification agents due to their unique ability to attach to surfaces in different configurations, including mono-, bi-, or even tridentate arrangements. Tethering by aggregation and growth (T-BAG) of octadecylphosphonic acid (ODPA) on silicon oxide surfaces has proven to be a robust method to establish a strong chemical bond. However, it requires a long processing time (> 48 h) that is a substantial drawback for industrial applications. We demonstrate here that the humidity level during processing is the most important parameter controlling the reaction. Using in situ Fourier Transform Infrared Spectroscopy (FTIR), we first show that the initially physisorbed layer obtained upon immersion in ODPA is composed of well-ordered bilayers and only reacts with the SiO(2) surface at 140 °C. Importantly, we show that the presence of water at the interface (determined by the humidity level) greatly influences the reaction time and completion. In humid environments (relative humidity, RH > 40%), there is no reaction, while in dry environments (RH < 16%), the reaction is essentially instantaneous at 140 °C. Ab initio calculations and modeling confirm that the degree of chemical reaction with the surface OH groups depends on the chemical potential (i.e., concentration) of interfacial water molecules. These findings provide a workable modification of the traditional T-BAG method consistent with many industrial applications.
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Affiliation(s)
- Abraham Vega
- Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States
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Thissen P, Peixoto T, Longo RC, Peng W, Schmidt WG, Cho K, Chabal YJ. Activation of surface hydroxyl groups by modification of H-terminated Si(111) surfaces. J Am Chem Soc 2012; 134:8869-74. [PMID: 22554133 DOI: 10.1021/ja300270w] [Citation(s) in RCA: 60] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Chemical functionalization of semiconductor surfaces, particularly silicon oxide, has enabled many technologically important applications (e.g., sensing, photovoltaics, and catalysis). For such processes, hydroxyl groups terminating the oxide surface constitute the primary reaction sites. However, their reactivity is often poor, hindering technologically important processes, such as surface phosphonation requiring a lengthy postprocessing annealing step at 140 °C with poor control of the bonding geometry. Using a novel oxide-free surface featuring a well-defined nanopatterned OH coverage, we demonstrate that hydroxyl groups on oxide-free silicon are more reactive than on silicon oxide. On this model surface, we show that a perfectly ordered layer of monodentate phosphonic acid molecules is chemically grafted at room temperature, and explain why it remains completely stable in aqueous environments, in contrast to phosphonates grafted on silicon oxides. This fundamental understanding of chemical activity and surface stability suggests new directions to functionalize silicon for sensors, photovoltaic devices, and nanoelectronics.
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Affiliation(s)
- Peter Thissen
- Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA.
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Queffélec C, Petit M, Janvier P, Knight DA, Bujoli B. Surface modification using phosphonic acids and esters. Chem Rev 2012; 112:3777-807. [PMID: 22530923 DOI: 10.1021/cr2004212] [Citation(s) in RCA: 551] [Impact Index Per Article: 45.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Affiliation(s)
- Clémence Queffélec
- LUNAM Université, CNRS, UMR, Chimie Et Interdisciplinarité: Synthèse Analyse Modélisation, UFR Sciences et Techniques, Nantes, France
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