Enhancement of photocurrent in ferroelectric films via the incorporation of narrow bandgap nanoparticles

Self-Powered Bipolar Photodetector Based on a Ce-BaTiO3 PTCR Semiconductor for Logic Gates

Ferroelectric materials bring new opportunities for self-powdered photodetectors, taking advantage of their anomalous bulk photovoltaic effect. However, ferroelectric-based photodetectors suffer from relatively poor responsivity and detectivity due to obstacles of low electrical conductivity and low photoelectric conversion ability. The present work proposes a strategy based on heterovalent ion Ce-doping into BaTiO₃ (Ce-BTO) that gives rise to a good room temperature conductivity combined with a significant PTCR (positive temperature coefficient of resistivity) effect. By utilizing a Ce-BTO PTCR semiconductor, a high-performance self-powered photodetector ITO/Ce-BTO/Ag is fabricated, demonstrating a polarity-switchable photoresponse with the change of wavelength due to the competition between hot electrons induced by the Ag plasmonic effect and electron-hole pairs separated by a Schottky barrier. Moreover, benefiting from the reduced bandgap and the introduced impurity states, good responsivity (9.85 × 10^-5 A/W) and detectivity (1.25 × 10¹⁰ Jones) as well as fast response/recovery time (83/47 ms) is achieved under 450 nm illumination. Finally, four representative logic gates ("OR", "AND", "NOR", and "NAND") are demonstrated with one photodetector via the bipolar photoresponse. This work opens an avenue to promote the application of PTCR semiconductors in optoelectronics, offering a conceivable means toward high-performance self-powered photodetectors.

Flexible BaTiO3 Thin Film-Based Coupled Nanogenerator for Simultaneously Scavenging Light and Vibration Energies

Ferroelectric materials have a variety of properties, such as piezoelectricity, pyroelectricity, and the ferroelectric photovoltaic effect, which enable them to obtain electrical energy from various external stimuli. Here, we report a coupled nanogenerator based on flexible BTO ferroelectric films with a cantilevered beam structure. It combines the photovoltaic and flexoelectric effects in a ferroelectric materials-based coupled nanogenerator for simultaneously scavenging vibration energy and light energy, thus improving energy scavenging performance. As compared with the photovoltaic effect individually, simultaneous vibration and light illumination under a light intensity of 57 mW/cm² at 405 nm can produce a photo-flexoelectric coupling current of 85 nA, where the current peak has been enhanced by 121%. Due to the photo-flexoelectric coupling effect, the device has outstanding charging performance, where a 4.7 μF capacitor can be charged to 60 mV in 150 s. These devices have potential applications in multi-energy scavenging and self-powered sensors.

Optimization of bandgap reduction in 2-dimensional GO nanosheets and nanocomposites of GO/iron-oxide for electronic device applications

In this report we have developed different fabrication parameters to tailor the optical bandgap of graphene oxide (GO) nanosheets to make it operational candidate in electronic industry. Here we performed two ways to reduce the bandgap of GO nanosheets. First, we have optimized the oxidation level of GO by reducing amount of oxidizing agent (i.e. KMnO₄) to control the sp²/sp³ hybridization ratio for a series of GO nanosheets samples. We noticed the reduction in primary band edge 3.93-3.2 eV while secondary band edge 2.98-2.2 eV of GO nanosheets as the amount of KMnO₄ is decreased from 100 to 30%. Second, we have fabricated a series of 2-dimensional nanocomposites sample containing GO/Iron-oxide by using a novel synthesis process wet impregnation method. XRD analysis of synthesized nanocomposites confirmed the presence of both phases,[Formula: see text]-Fe₂O₃ and Fe₃O₄ of iron-oxide with prominent plane (001) of GO. Morphological investigation rules out all the possibilities of agglomerations of iron oxide nanoparticles and coagulation of GO nanosheets. Elemental mapping endorsed the homogeneous distribution of iron oxide nanoparticles throughout the GO nanosheets. Raman spectroscopy confirmed the fairly constant I_D/I_G ratio and FWHM of D and G peaks, thus proving the fact that the synthesis process of nanocomposites has no effect on the degree of oxidation of GO flakes. Red shift in G peak position of all the nanocomposites samples showed the electronic interaction among the constituents of the nanocomposite. Linear decrease in the intensity of PL (Photoluminescence) spectra with the increasing of Iron oxide nanoparticles points towards the increased interaction among the iron oxide nanoparticles and GO flakes. Optical absorption spectroscopy reveals the linear decrease in primary edge of bandgap from 2.8 to 0.99 eV while secondary edge decrease 3.93-2.2 eV as the loading of [Formula: see text]-Fe₂O₃ nanoparticles is increased from 0 to 5% in GO nanosheets. Among these nanocomposites samples 5%-iron-oxide/95%-GO nanosheet sample may be a good contestant for electronic devices.

Highly Sensitive and Tunable Self-Powered UV Photodetectors Driven Jointly by p-n Junction and Ferroelectric Polarization

Ferroelectric (FE) materials are thought to be promising materials for self-powered ultraviolet (UV) photodetector applications because of their photovoltaic effects. However, FE-based photodetectors exhibited poor performance because of the weak photovoltaic effect of FE depolarization field (E_dp) on the separation of photo-generated carriers. In this work, self-powered photodetectors based on both E_dp and built-in electric field at the p-n junction (E_p-n) were designed to obtain enhanced device performance. A NiO/Pb_0.95La_0.05Zr_0.54Ti_0.46O₃ (PLZT) heterojunction-based device is constructed to take advantage of energy level alignments that favor electron extraction. The device exhibits a tunable performance upon varying the polarization direction of PLZT. The NiO/PLZT heterojunction-based device with the PLZT layer in the poling down state shows a higher responsivity [R = (1.8 ± 0.12) × 10^-4 A/W] and detectivity [D* = (3.69 ± 0.2) × 10⁹ Jones], a faster response speed (τ_r = 0.34 ± 0.03 s, τ_d = 0.36 ± 0.02 s), and a lower dark current [I_dark = (1.3 ± 0.19) × 10^-12 A] under zero bias than the PLZT-based device because of the synergistic effects of E_dp and E_p-n. Moreover, under weak-light illumination (0.1 mW/cm²), it exhibits even higher R [(6.3 ± 1.2) × 10^-4 A/W] and D* [(1.29 ± 0.26) × 10¹⁰ Jones] values, which surpass those of most previously reported FE-based self-powered photodetectors. Our work emphasizes the role of the coupling effect between E_p-n and E_dp in the photovoltaic process of NiO/PLZT heterojunction-based devices and provides an effective way to promote the self-powered UV photodetector applications.

The role of PN-like junction effects in energy storage performances for Ag2O nanoparticle dispersed lead-free K0.5Na0.5NbO3-BiMnO3 films

This work designs a PN-like junction structure by introducing Ag₂O nanoparticles into lead-free 0.92K_0.5Na_0.5NbO₃-0.08BiMnO₃ solid solution films to investigate the role of PN-like junction effects in energy storage performances. It is shown that the energy storage performances are obviously improved with the energy density increasing to 65.1 J cm^-3 from 20.1 J cm^-3 and the efficiency to 62.6% from 50.7%. The enhancement is attributed to the formation of the depletion layer with high resistance derived from a PN-like junction structure at the interface between Ag₂O nanoparticles and matrices. The rectification effect of the high resistance region in PN-like junction improves the insulation and breakdown strength, and the internal local field derived from the high resistance region divides the macroscopic domains, which are attributed to the enhancement of energy storage performances. This work provides an alternative strategy to improve the energy storage performances by designing a PN-like junction structure.

Ferroelectric-Semiconductor Solar Cells: An Alternative Configuration With High-Efficiency

The power generation of conventional solar cells suffers from their low open-circuit voltages that are restricted by the bandgap of employed semiconductors. We propose a novel photovoltaic cell based on the combination of ferroelectric materials and conventional semiconductors to overcome this restriction. In the proposed configuration, a semiconductor slab sandwiched between two parallel polarized ferroelectric materials attains an electric field parallel to the interfaces leading to an above-bandgap voltage across the semiconductor. Furthermore, the configuration allows the charge carriers produced in the semiconductor to be transported within the semiconductor to the contacts without having to cross the semiconductor-ferroelectric interface. The power generation is expected to be higher than those of conventional solar cells and previously studied combined designs: (i) Firstly because its open-circuit voltage can be much higher, as it is not restricted by the bandgap of the semiconductor material; (ii) secondly because certain unfavorable carrier transport processes, such as carrier tunneling through the interface and carrier transport through the low-mobility ferroelectric material, are not part of the circuit.

Enhanced Charge Transfer by Passivation Layer in 3DOM Ferroelectric Heterojunction for Water Oxidation in HCO3 - /CO2 System

Photoelectrochemical carbon dioxide conversion to fuels such as carbon monoxide, methanol, and ethylene exhibits great potential to solve energy issues. Unfortunately, CO₂ conversion efficiency is still low due to violent charge recombination at the photoanode. Herein, a novel 3D macroporous ferroelectric heterojunction composed of BiFeO₃ and LiNbO₃ is developed by a template-assisted sol-gel method, aiming at facilitating charge transfer kinetics. As expected, a tremendous enhancement of photocurrent density (300 times vs bare planar BiFeO₃ film) and charge transfer efficiency (up to 76%) is obtained in the HCO₃ ^- /CO₂ system without any cocatalyst. The photoelectrochemical performance is switchable by poling to form a depolarization electric field. Photoelectrochemical impedance spectroscopy reveals that the charge transfer resistance decreases due to the synergistic effect of BiFeO₃ 3D macroporous skeleton and LiNbO₃ passivation layer by tuning surface states. These results suggest a novel strategy for enhancing photoelectrochemical water oxidation as the anodic reaction of CO₂ reduction.

Photovoltage Reversal in Organic Optoelectronic Devices with Insulator-Semiconductor Interfaces

Photoinduced space-charges in organic optoelectronic devices, which are usually caused by poor mobility and charge injection imbalance, always limit the device performance. Here we demonstrate that photoinduced space-charge layers, accumulated at organic semiconductor-insulator interfaces, can also play a role for photocurrent generation. Photocurrent transients from organic devices, with insulator-semiconductor interfaces, were systematically studied by using the double-layer model with an equivalent circuit. Results indicated that the electric fields in photoinduced space-charge layers can be utilized for charge generation and can even induce a photovoltage reversal. Such an operational process of light harvesting would be promising for photoelectric conversion in organic devices.

Switchable ferroelectric photovoltaic effects in epitaxial h-RFeO3 thin films

Ferroelectric photovoltaics (FPVs) have drawn much attention owing to their high stability, environmental safety, and anomalously high photovoltages, coupled with reversibly switchable photovoltaic responses. However, FPVs suffer from extremely low photocurrents, which is primarily due to their wide band gaps. Here, we present a new class of FPVs by demonstrating switchable ferroelectric photovoltaic effects and narrow band-gap properties using hexagonal ferrite (h-RFeO3) thin films, where R denotes rare-earth ions. FPVs with narrow band gaps suggest their potential applicability as photovoltaic and optoelectronic devices. The h-RFeO3 films further exhibit reasonably large ferroelectric polarizations (4.7-8.5 μC cm-2), which possibly reduces a rapid recombination rate of the photo-generated electron-hole pairs. The power conversion efficiency (PCE) of h-RFeO3 thin-film devices is sensitive to the magnitude of polarization. In the case of the h-TmFeO3 (h-TFO) thin film, the measured PCE is twice as large as that of the BiFeO3 thin film, a prototypic FPV. The effect of electrical fatigue on FPV responses has been further investigated. This work thus demonstrates a new class of FPVs towards high-efficiency solar cell and optoelectronic applications.

Giant photovoltaic response in band engineered ferroelectric perovskite

Recently the solar energy, an inevitable part of green energy source, has become a mandatory topics in frontier research areas. In this respect, non-centrosymmetric ferroelectric perovskites with open circuit voltage (V_OC) higher than the bandgap, gain tremendous importance as next generation photovoltaic materials. Here a non-toxic co-doped Ba_1-x(Bi_0.5Li_0.5) _x TiO₃ ferroelectric system is designed where the dopants influence the band topology in order to enhance the photovoltaic effect. In particular, at the optimal doping concentration (x _opt  ~ 0.125) the sample reveals a remarkably high photogenerated field E_OC = 320 V/cm (V_OC = 16 V), highest ever reported in any bulk polycrystalline non-centrosymmetric systems. The band structure, examined through DFT calculations, suggests that the shift current mechanism is key to explain the large enhancement in photovoltaic effect in this family.

Photovoltaic-Pyroelectric Coupled Effect Induced Electricity for Self-Powered Photodetector System

Ferroelectric materials have demonstrated novel photovoltaic effect to scavenge solar energy. However, most of the ferroelectric materials with wide bandgaps (2.7-4 eV) suffer from low power conversion efficiency of less than 0.5% due to absorbing only 8-20% of solar spectrum. Instead of harvesting solar energy, these ferroelectric materials can be well suited for photodetector applications, especially for sensing near-UV irradiations. Here, a ferroelectric BaTiO₃ film-based photodetector is demonstrated that can be operated without using any external power source and a fast sensing of 405 nm light illumination is enabled. As compared with photovoltaic effect, both the responsivity and the specific detectivity of the photodetector can be dramatically enhanced by larger than 260% due to the light-induced photovoltaic-pyroelectric coupled effect. A self-powered photodetector array system can be utilized to achieve spatially resolved light intensity detection by recording the output voltage signals as a mapping figure.

Polarization-dependent interfacial coupling modulation of ferroelectric photovoltaic effect in PZT-ZnO heterostructures

Recently, ferroelectric perovskite oxides have drawn much attention due to potential applications in the field of solar energy conversion. However, the power conversion efficiency of ferroelectric photovoltaic effect currently reported is far below the expectable value. One of the crucial problems lies in the two back-to-back Schottky barriers, which are formed at the ferroelectric-electrode interfaces and blocking most of photo-generated carriers to reach the outside circuit. Herein, we develop a new approach to enhance the ferroelectric photovoltaic effect by introducing the polarization-dependent interfacial coupling effect. Through inserting a semiconductor ZnO layer with spontaneous polarization into the ferroelectric ITO/PZT/Au film, a p-n junction with strong polarization-dependent interfacial coupling effect is formed. The power conversion efficiency of the heterostructure is improved by nearly two orders of magnitude and the polarization modulation ratio is increased about four times. It is demonstrated that the polarization-dependent interfacial coupling effect can give rise to a great change in band structure of the heterostructure, not only producing an aligned internal electric field but also tuning both depletion layer width and potential barrier height at PZT-ZnO interface. This work provides an efficient way in developing highly efficient ferroelectric-based solar cells and novel optoelectronic memory devices.

Manipulation of charge transfer and transport in plasmonic-ferroelectric hybrids for photoelectrochemical applications

Utilizing plasmonic nanostructures for efficient and flexible conversion of solar energy into electricity or fuel presents a new paradigm in photovoltaics and photoelectrochemistry research. In a conventional photoelectrochemical cell, consisting of a plasmonic structure in contact with a semiconductor, the type of photoelectrochemical reaction is determined by the band bending at the semiconductor/electrolyte interface. The nature of the reaction is thus hard to tune. Here instead of using a semiconductor, we employed a ferroelectric material, Pb(Zr,Ti)O₃ (PZT). By depositing gold nanoparticle arrays and PZT films on ITO substrates, and studying the photocurrent as well as the femtosecond transient absorbance in different configurations, we demonstrate an effective charge transfer between the nanoparticle array and PZT. Most importantly, we show that the photocurrent can be tuned by nearly an order of magnitude when changing the ferroelectric polarization in PZT, demonstrating a versatile and tunable system for energy harvesting.

Photoelectrochemical systems based on plasmonics require control of band bending at the interface as well as transport of hot carriers. Here, Wang et al. employ a ferroelectric material, Pb(Zr,Ti)O₃, with gold on ITO to capture hot electrons from the metal and manipulate the photoexcited charges for energy conversion.

Concurrent bandgap narrowing and polarization enhancement in epitaxial ferroelectric nanofilms

Perovskite-type ferroelectric (FE) crystals are wide bandgap materials with technologically valuable optical and photoelectric properties. Here, versatile engineering of electronic transitions is demonstrated in FE nanofilms of KTaO3, KNbO3 (KNO), and NaNbO3 (NNO) with a thickness of 10-30 unit cells. Control of the bandgap is achieved using heteroepitaxial growth of new structural phases on SrTiO3 (001) substrates. Compared to bulk crystals, anomalous bandgap narrowing is obtained in the FE state of KNO and NNO films. This effect opposes polarization-induced bandgap widening, which is typically found for FE materials. Transmission electron microscopy and spectroscopic ellipsometry measurements indicate that the formation of higher-symmetry structural phases of KNO and NNO produces the desirable red shift of the absorption spectrum towards visible light, while simultaneously stabilizing robust FE order. Tuning of optical properties in FE films is of interest for nanoscale photonic and optoelectronic devices.

Ultrathin Ferroelectric Films: Growth, Characterization, Physics and Applications

Ultrathin ferroelectric films are of increasing interests these years, owing to the need of device miniaturization and their wide spectrum of appealing properties. Recent advanced deposition methods and characterization techniques have largely broadened the scope of experimental researches of ultrathin ferroelectric films, pushing intensive property study and promising device applications. This review aims to cover state-of-the-art experimental works of ultrathin ferroelectric films, with a comprehensive survey of growth methods, characterization techniques, important phenomena and properties, as well as device applications. The strongest emphasis is on those aspects intimately related to the unique phenomena and physics of ultrathin ferroelectric films. Prospects and challenges of this field also have been highlighted.

Photovoltaic enhancement due to surface-plasmon assisted visible-light absorption at the inartificial surface of lead zirconate-titanate film

PZT film of 300 nm thickness was deposited on tin indium oxide (ITO) coated quartz by a sol-gel method. Four metal electrodes, such as Pt, Au, Cu and Ag, were used as top electrodes deposited on the same PZT film by sputtering at room temperature. In ITO-PZT-Ag and ITO-PZT-Au structures, the visible light (400-700 nm) can be absorbed partially by a PZT film, and the maximum efficiency of photoelectric conversion of the ITO-PZT-Ag structure was enhanced to 0.42% (100 mW cm(-2), AM 1.5G), which is about 15 times higher than that of the ITO-PZT-Pt structure. Numerical simulations show that the natural random roughness of polycrystalline-PZT-metal interface can offer a possibility of coupling between the incident photons and SPs at the metal surface. The coincidence between the calculated SP properties and the measured EQE spectra reveals the SP origin of the photovoltaic enhancement in these ITO-PZT-metal structures, and the improved photocurrent output is caused by the enhanced optical absorption in the PZT region near the metal surface, rather than by the direct charge-transfer process between two materials.

A ferroelectric photocatalyst for enhancing hydrogen evolution: polarized particulate suspension

Improved hydrogen evolution in a particulate-suspension system is demonstrated for K_0.5Na_0.5NbO₃ powder polarized via corona poling, providing a guideline for imposing an electric field on a ferroelectric photocatalyst.

The photocathodic properties of a Pb(Zr0.2Ti0.8)O3 wrapped CaFe2O4 layer on ITO coated quartz for water splitting

An efficient photocathode was prepared through a ferroelectric Pb(Zr_0.2Ti_0.8)O₃ wrapped CaFe₂O₄ structure.

Enhanced photovoltaic effect in BiVO4 semiconductor by incorporation with an ultrathin BiFeO3 ferroelectric layer

The photovoltaic effect of BiVO4 semiconductor was investigated by incorporating an ultrathin BiFeO3 ferroelectric layer. It is found that the ultrathin ferroelectric layer with strong self-polarization and high carrier density is desirable to enhance the photovoltaic effect and to manipulate the photovoltaic polarity of the semiconductors. The photovoltage increases by 5-fold to 1 V, and the photocurrent density increases by 2-fold to 140 μA/cm(2), in which the photovoltage is the highest compared with the reported values in polycrystalline and epitaxial ferroelectric thin film solar cells. The mechanism for the observed effect is discussed on the basis of a polarization-induced Schottky-like barrier at the BiFeO3/fluorine doped tin oxide interface. Our work provides good guidance for fabrication of cost-effective semiconductor photovoltaic devices with high performance, and this kind of ultrathin ferroelectric film may also have promising applications in copper indium gallium selenide solar cell, dye-sensitized TiO2 solar cell, lighting emitting diode, and other photoelectron related devices.

New high T(c) multiferroics KBiFe₂O₅ with narrow band gap and promising photovoltaic effect

Intrinsic polarization of ferroelectrics (FE) helps separate photon-generated charge carriers thus enhances photovoltaic effects. However, traditional FE with transition-metal cations (M) of d⁰ electron in MO₆ network typically has a band gap (E_g) exceeding 3.0 eV. Although a smaller E_g (2.6 eV) can be obtained in multiferroic BiFeO₃, the value is still too high for optimal solar energy applications. Computational “materials genome” searches have predicted several exotic MO₆ FE with E_g < 2.0 eV, all thus far unconfirmed because of synthesis difficulties. Here we report a new FE compound with MO₄ tetrahedral network, KBiFe₂O₅, which features narrow E_g (1.6 eV), high Curie temperature (T_c ~ 780 K) and robust magnetic and photoelectric activities. The high photovoltage (8.8 V) and photocurrent density (15 μA/cm²) were obtained, which is comparable to the reported BiFeO₃. This finding may open a new avenue to discovering and designing optimal FE compounds for solar energy applications.

Enlarging photovoltaic effect: combination of classic photoelectric and ferroelectric photovoltaic effects

Converting light energy to electrical energy in photovoltaic devices relies on the photogenerated electrons and holes separated by the built-in potential in semiconductors. Photo-excited electrons in metal electrodes are usually not considered in this process. Here, we report an enhanced photovoltaic effect in the ferroelectric lanthanum-modified lead zirconate titanate (PLZT) by using low work function metals as the electrodes. We believe that electrons in the metal with low work function could be photo-emitted into PLZT and form the dominant photocurrent in our devices. Under AM1.5 (100 mW/cm²) illumination, the short-circuit current and open-circuit voltage of Mg/PLZT/ITO are about 150 and 2 times of those of Pt/PLZT/ITO, respectively. The photovoltaic response of PLZT capacitor was expanded from ultraviolet to visible spectra, and it may have important impact on design and fabrication of high performance photovoltaic devices based on ferroelectric materials.