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Sharma S, Pandey M, Nagamatsu S, Tanaka H, Takashima K, Nakamura M, Pandey SS. High-Density, Nonvolatile, Flexible Multilevel Organic Memristor Using Multilayered Polymer Semiconductors. ACS APPLIED MATERIALS & INTERFACES 2024; 16:22282-22293. [PMID: 38644562 PMCID: PMC11082853 DOI: 10.1021/acsami.4c03111] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/24/2024] [Revised: 04/07/2024] [Accepted: 04/10/2024] [Indexed: 04/23/2024]
Abstract
Nonvolatile organic memristors have emerged as promising candidates for next-generation electronics, emphasizing the need for vertical device fabrication to attain a high density. Herein, we present a comprehensive investigation of high-performance organic memristors, fabricated in crossbar architecture with PTB7/Al-AlOx-nanocluster/PTB7 embedded between Al electrodes. PTB7 films were fabricated using the Unidirectional Floating Film Transfer Method, enabling independent uniform film fabrication in the Layer-by-Layer (LbL) configuration without disturbing underlying films. We examined the charge transport mechanism of our memristors using the Hubbard model highlighting the role of Al-AlOx-nanoclusters in switching-on the devices, due to the accumulation of bipolarons in the semiconducting layer. By varying the number of LbL films in the device architecture, the resistance of resistive states was systematically altered, enabling the fabrication of novel multilevel memristors. These multilevel devices exhibited excellent performance metrics, including enhanced memory density, high on-off ratio (>108), remarkable memory retention (>105 s), high endurance (87 on-off cycles), and rapid switching (∼100 ns). Furthermore, flexible memristors were fabricated, demonstrating consistent performance even under bending conditions, with a radius of 2.78 mm for >104 bending cycles. This study not only demonstrates the fundamental understanding of charge transport in organic memristors but also introduces novel device architectures with significant implications for high-density flexible applications.
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Affiliation(s)
- Shubham Sharma
- Graduate
School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
| | - Manish Pandey
- Department
of Electronics and Communication Engineering, Indian Institute of Technology, Durg,Bhilai, Chattisgarh 491001, India
| | - Shuichi Nagamatsu
- Department
of Computer Science and Electronics, Kyushu
Institute of Technology, 680-4 Kawazu, Iizuka 820-8502, Japan
| | - Hirofumi Tanaka
- Department
of Human Intelligence Systems, Kyushu Institute
of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
| | - Kazuto Takashima
- Graduate
School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
| | - Masakazu Nakamura
- Division
of Materials Science, Nara Institute of
Science and Technology, Ikoma, Nara 630-0192, Japan
| | - Shyam S. Pandey
- Graduate
School of Life Science and Systems Engineering, Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196, Japan
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2
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Kamath R, Sarkar P, Melanthota SK, Biswas R, Mazumder N, De S. Resistive Memory-Switching Behavior in Solution-Processed Trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) Benzene-PVA-Composite-Based Aryl Acrylate on ITO-Coated PET. Polymers (Basel) 2024; 16:218. [PMID: 38257018 PMCID: PMC10818758 DOI: 10.3390/polym16020218] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2023] [Revised: 11/10/2023] [Accepted: 11/14/2023] [Indexed: 01/24/2024] Open
Abstract
Resistive switching memories are among the emerging next-generation technologies that are possible candidates for in-memory and neuromorphic computing. In this report, resistive memory-switching behavior in solution-processed trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) benzene-PVA-composite-based aryl acrylate on an ITO-coated PET device was studied. A sandwich configuration was selected, with silver (Ag) serving as a top contact and trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) benzene-PVA-composite-based aryl acrylate and ITO-PET serving as a bottom contact. The current-voltage (I-V) characteristics showed hysteresis behavior and non-zero crossing owing to voltages sweeping from positive to negative and vice versa. The results showed non-zero crossing in the devices' current-voltage (I-V) characteristics due to the nanobattery effect or resistance, capacitive, and inductive effects. The device also displayed a negative differential resistance (NDR) effect. Non-volatile storage was feasible with non-zero crossing due to the exhibition of resistive switching behavior. The sweeping range was -10 V to +10 V. These devices had two distinct states: 'ON' and 'OFF'. The ON/OFF ratios of the devices were 14 and 100 under stable operating conditions. The open-circuit voltages (Voc) and short-circuit currents (Isc) corresponding to memristor operation were explained. The DC endurance was stable. Ohmic conduction and direct tunneling mechanisms with traps explained the charge transport model governing the resistive switching behavior. This work gives insight into data storage in terms of a new conception of electronic devices based on facile and low-temperature processed material composites for emerging computational devices.
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Affiliation(s)
- Rachana Kamath
- Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India;
| | - Parantap Sarkar
- Manipal Centre for Natural Sciences, Manipal Academy of Higher Education, Dr. T. M. A. Pai Planetarium Building, Madhav Nagar, Manipal 576104, Karnataka, India;
| | - Sindhoora Kaniyala Melanthota
- Department of Biophysics, Manipal School of Life Sciences, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India; (S.K.M.); (N.M.)
| | - Rajib Biswas
- Department of Physics, Tezpur University, Tezpur 784028, Assam, India;
| | - Nirmal Mazumder
- Department of Biophysics, Manipal School of Life Sciences, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India; (S.K.M.); (N.M.)
| | - Shounak De
- Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India;
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3
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R RT, Das RR, Reghuvaran C, James A. Graphene-based RRAM devices for neural computing. Front Neurosci 2023; 17:1253075. [PMID: 37886675 PMCID: PMC10598392 DOI: 10.3389/fnins.2023.1253075] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/04/2023] [Accepted: 09/13/2023] [Indexed: 10/28/2023] Open
Abstract
Resistive random access memory is very well known for its potential application in in-memory and neural computing. However, they often have different types of device-to-device and cycle-to-cycle variability. This makes it harder to build highly accurate crossbar arrays. Traditional RRAM designs make use of various filament-based oxide materials for creating a channel that is sandwiched between two electrodes to form a two-terminal structure. They are often subjected to mechanical and electrical stress over repeated read-and-write cycles. The behavior of these devices often varies in practice across wafer arrays over these stresses when fabricated. The use of emerging 2D materials is explored to improve electrical endurance, long retention time, high switching speed, and fewer power losses. This study provides an in-depth exploration of neuro-memristive computing and its potential applications, focusing specifically on the utilization of graphene and 2D materials in RRAM for neural computing. The study presents a comprehensive analysis of the structural and design aspects of graphene-based RRAM, along with a thorough examination of commercially available RRAM models and their fabrication techniques. Furthermore, the study investigates the diverse range of applications that can benefit from graphene-based RRAM devices.
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Affiliation(s)
| | | | | | - Alex James
- Digital University, Thiruvananthapuram, Kerala, India
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4
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Jian J, Dong P, Jian Z, Zhao T, Miao C, Chang H, Chen J, Chen YF, Chen YB, Feng H, Sorli B. Ultralow-Power RRAM with a High Switching Ratio Based on the Large van der Waals Interstice Radius of TMDs. ACS NANO 2022; 16:20445-20456. [PMID: 36468939 DOI: 10.1021/acsnano.2c06728] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Low power and high switching ratio are the development direction of the next generation of resistive random access memory (RRAM). Previous techniques could not increase the switching ratio while reducing the SET power. Here, we report a method to fabricate low-power and high-switching-ratio RRAM by adjusting the interstice radius (rg) between the van der Waals (vdW) layers of transitional-metal dichalcogenides (TMDs), which simultaneously increases the switching ratio and reduces the SET power. The SET voltage, SET power, switching ratio and endurance of the device are strongly correlated with rg. When the ratio of rg to the radius of the metal ions that form the conductive filaments (rg/rAg+) is near 1, the SET voltage and SET power vertically decrease while the switching ratio vertically rises with increasing rg/rAg+. For the fabricated Ag/[SnS2/poly(methyl methacrylate)]/Cu RRAM with an rg/rAg+ of 1.04, the SET voltage, SET power and switching ratio are 0.14 V, 10-10 W and 106, respectively. After 104 switching cycles and a 104 s retention time, the switching ratio of the device can still be stable above 106. Bending has no influence on the performance of the device when the bending radius is not <2 mm.
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Affiliation(s)
- Jiaying Jian
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Pengfan Dong
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Zengyun Jian
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Ting Zhao
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Chen Miao
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Honglong Chang
- School of Mechanical Engineering, Northwestern Polytechnical University, Xi'an710072, China
| | - Jian Chen
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Yan-Feng Chen
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing210093, China
| | - Yan-Bin Chen
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing210093, China
| | - Hao Feng
- Shaanxi Key Laboratory of Photoelectric Functional Materials and Devices, Xi'an Technological University, Xi'an710021, China
| | - Brice Sorli
- Institute of Electronics and Systems, University of Montpellier, Montpellier34095, France
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5
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Abstract
Bio-memristors constitute candidates for the next generation of non-volatile storage and bionic synapses due to their biocompatibility, environmental benignity, sustainability, flexibility, degradability, and impressive memristive performance. Silk fibroin (SF), a natural and abundant biomaterial with excellent mechanical, optical, electrical, and structure-adjustable properties as well as being easy to process, has been utilized and shown to have potential in the construction of bio-memristors. Here, we first summarize the fundamental mechanisms of bio-memristors based on SF. Then, the latest achievements and developments of pristine and composited SF-based memristors are highlighted, followed by the integration of memristive devices. Finally, the challenges and insights associated with SF-based bio-memristors are presented. Advances in SF-based bio-memristors will open new avenues in the design and integration of high-performance bio-integrated systems and facilitate their application in logic operations, complex circuits, and neural networks.
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Affiliation(s)
- Yi Zhang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China.
| | - Suna Fan
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China.
| | - Yaopeng Zhang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, P. R. China.
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6
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Lanza M, Waser R, Ielmini D, Yang JJ, Goux L, Suñe J, Kenyon AJ, Mehonic A, Spiga S, Rana V, Wiefels S, Menzel S, Valov I, Villena MA, Miranda E, Jing X, Campabadal F, Gonzalez MB, Aguirre F, Palumbo F, Zhu K, Roldan JB, Puglisi FM, Larcher L, Hou TH, Prodromakis T, Yang Y, Huang P, Wan T, Chai Y, Pey KL, Raghavan N, Dueñas S, Wang T, Xia Q, Pazos S. Standards for the Characterization of Endurance in Resistive Switching Devices. ACS NANO 2021; 15:17214-17231. [PMID: 34730935 DOI: 10.1021/acsnano.1c06980] [Citation(s) in RCA: 35] [Impact Index Per Article: 11.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Resistive switching (RS) devices are emerging electronic components that could have applications in multiple types of integrated circuits, including electronic memories, true random number generators, radiofrequency switches, neuromorphic vision sensors, and artificial neural networks. The main factor hindering the massive employment of RS devices in commercial circuits is related to variability and reliability issues, which are usually evaluated through switching endurance tests. However, we note that most studies that claimed high endurances >106 cycles were based on resistance versus cycle plots that contain very few data points (in many cases even <20), and which are collected in only one device. We recommend not to use such a characterization method because it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices and in many cases has exaggerated their potential. This article proposes and describes a method for the correct characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.
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Affiliation(s)
- Mario Lanza
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Rainer Waser
- Peter-Grünberg-Institut (PGI-7), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
- Peter-Grünberg-Institut (PGI-10), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
- Institut für Werkstoffe der Elektrotechnik 2 (IWE2), RWTH Aachen University, Aachen 52074, Germany
| | - Daniele Ielmini
- Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano and IU.NET, Piazza L. da Vinci 32, Milano, 20133, Italy
| | - J Joshua Yang
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | | | - Jordi Suñe
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Barcelona 08193, Spain
| | - Anthony Joseph Kenyon
- Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
| | - Adnan Mehonic
- Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom
| | - Sabina Spiga
- CNR-IMM, Unit of Agrate Brianza, Via C. Olivetti 2, Agrate Brianza (MB) 20864, Italy
| | - Vikas Rana
- Peter-Grünberg-Institut (PGI-10), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Stefan Wiefels
- Peter-Grünberg-Institut (PGI-7), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Stephan Menzel
- Peter-Grünberg-Institut (PGI-7), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Ilia Valov
- Peter-Grünberg-Institut (PGI-7), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Marco A Villena
- Applied Materials Inc., Via Ruini, Reggio Emilia 74L 42122, Italy
| | - Enrique Miranda
- Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, Barcelona 08193, Spain
| | - Xu Jing
- School of Materials Science and Engineering, Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, China
| | - Francesca Campabadal
- Institut de Microelectrònica de Barcelona-Centre Nacional de Microelectrònica, Consejo Superior de Investigaciones Científicas, Bellaterra 08193, Spain
| | - Mireia B Gonzalez
- Institut de Microelectrònica de Barcelona-Centre Nacional de Microelectrònica, Consejo Superior de Investigaciones Científicas, Bellaterra 08193, Spain
| | - Fernando Aguirre
- Unidad de Investigación y Desarrollo de las Ingenierías-CONICET, Facultad Regional Buenos Aires, Universidad Tecnológica Nacional (UIDI-CONICET/FRBA-UTN), Buenos Aires, Medrano 951(C1179AAQ), Argentina
| | - Felix Palumbo
- Unidad de Investigación y Desarrollo de las Ingenierías-CONICET, Facultad Regional Buenos Aires, Universidad Tecnológica Nacional (UIDI-CONICET/FRBA-UTN), Buenos Aires, Medrano 951(C1179AAQ), Argentina
| | - Kaichen Zhu
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Juan Bautista Roldan
- Departamento de Electrónica y Tecnología de Computadores, Facultad de Ciencias, Universidad de Granada, Avd. Fuentenueva s/n, Granada 18071, Spain
| | - Francesco Maria Puglisi
- Dipartimento di Ingegneria "Enzo Ferrari", Università di Modena e Reggio Emilia, Via P. Vivarelli 10/1, Modena 41125, Italy
| | - Luca Larcher
- Applied Materials Inc., Via Ruini, Reggio Emilia 74L 42122, Italy
| | - Tuo-Hung Hou
- Department of Electronics Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Themis Prodromakis
- Centre for Electronics Frontiers, University of Southampton, Southampton SO171BJ, United Kingdom
| | - Yuchao Yang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), Department of Micro/nanoelectronics, Peking University, Beijing 100871, China
| | - Peng Huang
- Key Laboratory of Microelectronic Devices and Circuits (MOE), Department of Micro/nanoelectronics, Peking University, Beijing 100871, China
| | - Tianqing Wan
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong
| | - Kin Leong Pey
- Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372 Singapore
| | - Nagarajan Raghavan
- Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, 487372 Singapore
| | - Salvador Dueñas
- Department of Electronics, University of Valladolid, Paseo de Belén 15, Valladolid E-47011, Spain
| | - Tao Wang
- Institute of Functional Nano and Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University 199 Ren-Ai Road, Suzhou 215123, China
| | - Qiangfei Xia
- Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, Massachusetts 01003-9292, United States
| | - Sebastian Pazos
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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7
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Rudra Paul A, Dey B, Suklabaidya S, Hussain SA, Majumdar S. 7-Alkoxy-appended coumarin derivatives: synthesis, photo-physical properties, aggregation behaviours and current-voltage ( I- V) characteristic studies on thin films. RSC Adv 2021; 11:10212-10223. [PMID: 35423533 PMCID: PMC8695653 DOI: 10.1039/d1ra00762a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2021] [Accepted: 02/19/2021] [Indexed: 01/05/2023] Open
Abstract
In this study, we designed and synthesised a series of coumarin derivatives appended with a long alkoxy chain on the seventh position of the coumarin-3-carboxylate/carboxylic acid core to make thin film materials. Synthesised compounds were characterized by their UV and fluorescence spectra in solutions as well as their films prepared by both LB and spin-coated methods. The surface morphology and electrical behaviour of thin films were judged by AFM, SEM and I-V characteristic mapping respectively. Isotherm, UV-Vis absorption and fluorescence spectroscopic investigations revealed the formation of aggregates on thin films. The result of SEM and AFM images provides the information about the length and height of aggregates on the thin films of coumarin derivatives. From I-V characteristics, it was found that at room temperature, the spin-coated films of coumarin derivatives containing an ester functional group exhibited a threshold switching behaviour, whereas derivatives containing the carboxylic acid functional group showed both threshold and bipolar switching behaviours. We also noticed that the I-V characteristic features of synthesized materials depended on the length of the alkyl chain of individual series.
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Affiliation(s)
- Abhijit Rudra Paul
- Department of Chemistry, Tripura University Suryamaninagar 799 022 India +91-381-2374802 +91-381-237-9070
| | - Bapi Dey
- Department of Physics, Tripura University Suryamaninagar 799 022 India
| | - Sudip Suklabaidya
- Department of Physics, Tripura University Suryamaninagar 799 022 India
| | | | - Swapan Majumdar
- Department of Chemistry, Tripura University Suryamaninagar 799 022 India +91-381-2374802 +91-381-237-9070
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8
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Liu S, Chen X, Liu G. Conjugated polymers for information storage and neuromorphic computing. POLYM INT 2020. [DOI: 10.1002/pi.6017] [Citation(s) in RCA: 9] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/15/2022]
Affiliation(s)
- Shuzhi Liu
- School of Chemistry and Chemical Engineering Shanghai Jiao Tong University Shanghai China
| | - Xinhui Chen
- School of Chemistry and Chemical Engineering Shanghai Jiao Tong University Shanghai China
| | - Gang Liu
- School of Chemistry and Chemical Engineering Shanghai Jiao Tong University Shanghai China
- Green Catalysis Center and College of Chemistry Zhengzhou University Zhengzhou China
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9
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Rehman MM, Rehman HMMU, Gul JZ, Kim WY, Karimov KS, Ahmed N. Decade of 2D-materials-based RRAM devices: a review. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2020; 21:147-186. [PMID: 32284767 PMCID: PMC7144203 DOI: 10.1080/14686996.2020.1730236] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2019] [Revised: 02/12/2020] [Accepted: 02/12/2020] [Indexed: 06/01/2023]
Abstract
Two dimensional (2D) materials have offered unique electrical, chemical, mechanical and physical properties over the past decade owing to their ultrathin, flexible, and multilayer structure. These layered materials are being used in numerous electronic devices for various applications, and this review will specifically focus on the resistive random access memories (RRAMs) based on 2D materials and their nanocomposites. This study presents the device structures, conduction mechanisms, resistive switching properties, fabrication technologies, challenges and future aspects of 2D-materials-based RRAMs. Graphene, derivatives of graphene and MoS2 have been the major contributors among 2D materials for the application of RRAMs; however, other members of this family such as hBN, MoSe2, WS2 and WSe2 have also been inspected more recently as the functional materials of nonvolatile RRAM devices. Conduction in these devices is usually dominated by either the penetration of metallic ions or migration of intrinsic species. Most prominent advantages offered by RRAM devices based on 2D materials include fast switching speed (<10 ns), less power losses (10 pJ), lower threshold voltage (<1 V) long retention time (>10 years), high electrical endurance (>108 voltage cycles) and extended mechanical robustness (500 bending cycles). Resistive switching properties of 2D materials have been further enhanced by blending them with metallic nanoparticles, organic polymers and inorganic semiconductors in various forms.
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Affiliation(s)
- Muhammad Muqeet Rehman
- Faculty of Electrical Engineering, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Pakistan
| | | | - Jahan Zeb Gul
- Department of Mechatronics & Biomedical Engineering, AIR University, Islamabad, Pakistan
| | - Woo Young Kim
- Faculty of Electronic Engineering, Jeju National University, Jeju, South Korea
| | - Khasan S Karimov
- Faculty of Electrical Engineering, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Pakistan
| | - Nisar Ahmed
- Faculty of Electrical Engineering, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Pakistan
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10
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Effect of Functional Group on Electrical Switching Behaviour of an Imidazole Derivative in Langmuir‐Blodgett Film. ChemistrySelect 2019. [DOI: 10.1002/slct.201901824] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/31/2022]
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11
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Lai Y, Hsiao Y, Wu H, Wang ZL. Waterproof Fabric-Based Multifunctional Triboelectric Nanogenerator for Universally Harvesting Energy from Raindrops, Wind, and Human Motions and as Self-Powered Sensors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1801883. [PMID: 30886807 PMCID: PMC6402409 DOI: 10.1002/advs.201801883] [Citation(s) in RCA: 69] [Impact Index Per Article: 13.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2018] [Indexed: 05/17/2023]
Abstract
Developing nimble, shape-adaptable, conformable, and widely implementable energy harvesters with the capability to scavenge multiple renewable and ambient energy sources is highly demanded for distributed, remote, and wearable energy uses to meet the needs of internet of things. Here, the first single waterproof and fabric-based multifunctional triboelectric nanogenerator (WPF-MTENG) is presented, which can produce electricity from both natural tiny impacts (rain and wind) and body movements, and can not only serve as a flexible, adaptive, wearable, and universal energy collector but also act as a self-powered, active, fabric-based sensor. The working principle comes from a conjunction of contact triboelectrification and electrostatic induction during contact/separation of internal soft fabrics. The structural/material designs of the WPF-MTENG are systematically studied to optimize its performance, and its outputs under different conditions of rain, wind, and various body movements are comprehensively investigated. Its applicability is practically demonstrated in various objects and working situations to gather ambient energy. Lastly, a WPF-MTENG-based keypad as self-powered human-system interfaces is demonstrated on a garment for remotely controlling a music-player system. This multifunctional WPF-MTENG, which is as flexible as clothes, not only presents a promising step toward democratic collections of alternative energy but also provides a new vision for wearable technologies.
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Affiliation(s)
- Ying‐Chih Lai
- Department of Materials Science and EngineeringNational Chung Hsing UniversityTaichung40227Taiwan
- Innovation and Development Center of Sustainable AgricultureResearch Center for Sustainable Energy and NanotechnologyNational Chung Hsing UniversityTaichung40227Taiwan
| | - Yung‐Chi Hsiao
- Department of Materials Science and EngineeringNational Chung Hsing UniversityTaichung40227Taiwan
| | - Hsing‐Mei Wu
- Department of Materials Science and EngineeringNational Chung Hsing UniversityTaichung40227Taiwan
| | - Zhong Lin Wang
- School of Materials Science and EngineeringGeorgia Institute of TechnologyAtlantaGA30332USA
- Beijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesNational Center for Nanoscience and Technology (NCNST)Beijing100083P. R. China
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12
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Cai SY, Tzou CY, Liou YR, Chen DR, Jiang CY, Ma JM, Chang CY, Tseng CY, Liao YM, Hsieh YP, Hofmann M, Chen YF. Hybrid Optical/Electric Memristor for Light-Based Logic and Communication. ACS APPLIED MATERIALS & INTERFACES 2019; 11:4649-4653. [PMID: 30628434 DOI: 10.1021/acsami.8b19424] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Light-based information processing has the potential to increase speed, security, and scalability of electronic devices if issues in the device complexity could be resolved. We here demonstrate an integrated nanoelectronic device that can combine, store, and manipulate optical and electronic information. Employing a mechanically flexible and multilayered structure, a device is realized that shows memristive behavior. Illumination is shown to control the device operation in several unique ways. First, the device produces photocurrent that allows us to read out the device state in a self-powered manner. More importantly, a varying light intensity modulates the switching transition in a proportional manner that is akin to a neuron with variable plasticity and which can be taught and queried using either light or electrical inputs. This behavior enables a multilevel light-controlled logic and teaching schemes that can be applied to light-based communication devices and provides a route toward ubiquitous and low-cost sensors for future internet of things applications.
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Affiliation(s)
| | | | | | - Ding-Rui Chen
- Institute of Opto-Mechatronics , National Chung Cheng University , Chiayi 621 , Taiwan
| | | | | | | | - Chen-Yang Tseng
- Department of Optoelectronic Sciences , National Taiwan Ocean University , Keelung 202 , Taiwan
| | | | - Ya-Ping Hsieh
- Institute for Atomic and Molecular Sciences , Academia Sinica , Taipei 10617 , Taiwan
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13
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Zhou L, Mao J, Ren Y, Han ST, Roy VAL, Zhou Y. Recent Advances of Flexible Data Storage Devices Based on Organic Nanoscaled Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2018; 14:1703126. [PMID: 29377568 DOI: 10.1002/smll.201703126] [Citation(s) in RCA: 47] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2017] [Revised: 11/04/2017] [Indexed: 06/07/2023]
Abstract
Following the trend of miniaturization as per Moore's law, and facing the strong demand of next-generation electronic devices that should be highly portable, wearable, transplantable, and lightweight, growing endeavors have been made to develop novel flexible data storage devices possessing nonvolatile ability, high-density storage, high-switching speed, and reliable endurance properties. Nonvolatile organic data storage devices including memory devices on the basis of floating-gate, charge-trapping, and ferroelectric architectures, as well as organic resistive memory are believed to be favorable candidates for future data storage applications. In this Review, typical information on device structure, memory characteristics, device operation mechanisms, mechanical properties, challenges, and recent progress of the above categories of flexible data storage devices based on organic nanoscaled materials is summarized.
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Affiliation(s)
- Li Zhou
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jingyu Mao
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yi Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong SAR
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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14
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Hou X, Cheng X, Zhou J, He J, Xu Q, Li H, Li N, Chen D, Lu J. Better Organic Ternary Memory Performance through Self‐Assembled Alkyltrichlorosilane Monolayers on Indium Tin Oxide (ITO) Surfaces. Chemistry 2017; 23:16393-16400. [DOI: 10.1002/chem.201704059] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2017] [Indexed: 11/05/2022]
Affiliation(s)
- Xiang Hou
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Institution Soochow University Suzhou 215123 P. R. China
| | - Xue‐Feng Cheng
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Institution Soochow University Suzhou 215123 P. R. China
| | - Jin Zhou
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Institution Soochow University Suzhou 215123 P. R. China
| | - Jing‐Hui He
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Institution Soochow University Suzhou 215123 P. R. China
| | - Qing‐Feng Xu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Institution Soochow University Suzhou 215123 P. R. China
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Institution Soochow University Suzhou 215123 P. R. China
| | - Na‐Jun Li
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Institution Soochow University Suzhou 215123 P. R. China
| | - Dong‐Yun Chen
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Institution Soochow University Suzhou 215123 P. R. China
| | - Jian‐Mei Lu
- College of Chemistry, Chemical Engineering and Materials Science, Collaborative Innovation Center of Suzhou Nano Science and Technology Institution Soochow University Suzhou 215123 P. R. China
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15
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Qian K, Tay RY, Lin MF, Chen J, Li H, Lin J, Wang J, Cai G, Nguyen VC, Teo EHT, Chen T, Lee PS. Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory. ACS NANO 2017; 11:1712-1718. [PMID: 28112907 DOI: 10.1021/acsnano.6b07577] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Electronics with multifunctionalities such as transparency, portability, and flexibility are anticipated for future circuitry development. Flexible memory is one of the indispensable elements in a hybrid electronic integrated circuit as the information storage device. Herein, we demonstrate a transparent, flexible, and transferable hexagonal boron nitride (hBN)-based resistive switching memory with indium tin oxide (ITO) and graphene electrodes on soft polydimethylsiloxane (PDMS) substrate. The ITO/hBN/graphene/PDMS memory device not only exhibits excellent performance in terms of optical transmittance (∼85% in the visible wavelength), ON/OFF ratio (∼480), retention time (∼5 × 104 s) but also shows robust flexibility under bending conditions and stable operation on arbitrary substrates. More importantly, direct observation of indium filaments in an ITO/hBN/graphene device is found via ex situ transmission electron microscopy, which provides critical insight on the complex resistive switching mechanisms.
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Affiliation(s)
- Kai Qian
- School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore
| | - Roland Yingjie Tay
- School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore
| | - Meng-Fang Lin
- School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore
| | - Jingwei Chen
- School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore
| | - Huakai Li
- School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore
| | - Jinjun Lin
- School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore
| | - Jiangxin Wang
- School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore
| | - Guofa Cai
- School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore
| | - Viet Cuong Nguyen
- School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore
| | - Edwin Hang Tong Teo
- School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore
| | - Tupei Chen
- School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore
| | - Pooi See Lee
- School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore
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16
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Hou X, Xiao X, Zhou QH, Cheng XF, He JH, Xu QF, Li H, Li NJ, Chen DY, Lu JM. Surface engineering to achieve organic ternary memory with a high device yield and improved performance. Chem Sci 2016; 8:2344-2351. [PMID: 28451339 PMCID: PMC5364995 DOI: 10.1039/c6sc03986c] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/06/2016] [Accepted: 12/15/2016] [Indexed: 11/21/2022] Open
Abstract
Organic memories fabricated on surface-engineered indium tin oxide show the highest ternary yield (82%) to date and better performance.
Squaraine molecules deposited on indium tin oxide (ITO) substrates modified with phosphonic acids crystalize more orderly than do those on untreated ITO. The as-fabricated electro-resistive memories show the highest ternary device yield observed to date (82%), a narrower switching voltage distribution, and better retention as well as resistance uniformity.
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Affiliation(s)
- Xiang Hou
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Xin Xiao
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Qian-Hao Zhou
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Xue-Feng Cheng
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Jing-Hui He
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Qing-Feng Xu
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Na-Jun Li
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Dong-Yun Chen
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
| | - Jian-Mei Lu
- College of Chemistry, Chemical Engineering and Materials Science , Collaborative Innovation Center of Suzhou Nano Science and Technology , National United Engineering Laboratory of Functionalized Environmental Adsorption Materials , Soochow University , Suzhou 215123 , PR China . ;
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17
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Li Y, Li H, He J, Xu Q, Li N, Chen D, Lu J. Towards Highly-Efficient Phototriggered Data Storage by Utilizing a Diketopyrrolopyrrole-Based Photoelectronic Small Molecule. Chem Asian J 2016; 11:2078-84. [DOI: 10.1002/asia.201600692] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2016] [Indexed: 12/15/2022]
Affiliation(s)
- Yang Li
- College of Chemistry, Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Hua Li
- College of Chemistry, Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Jinghui He
- College of Chemistry, Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Qingfeng Xu
- College of Chemistry, Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Najun Li
- College of Chemistry, Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Dongyun Chen
- College of Chemistry, Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Jianmei Lu
- College of Chemistry, Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
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18
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Li Y, Li H, He J, Xu Q, Li N, Chen D, Lu J. Inserting Thienyl Linkers into Conjugated Molecules for Efficient Multilevel Electronic Memory: A New Understanding of Charge-Trapping in Organic Materials. Chem Asian J 2016; 11:906-14. [DOI: 10.1002/asia.201501441] [Citation(s) in RCA: 21] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/25/2015] [Indexed: 11/11/2022]
Affiliation(s)
- Yang Li
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Hua Li
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Jinghui He
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Qingfeng Xu
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Najun Li
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Dongyun Chen
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
| | - Jianmei Lu
- College of Chemistry; Chemical Engineering and Materials Science; Collaborative Innovation Center of Suzhou Nano Science and Technology; Soochow University; Suzhou 215123 P. R. China
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19
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Chiang CW, Haider G, Tan WC, Liou YR, Lai YC, Ravindranath R, Chang HT, Chen YF. Highly Stretchable and Sensitive Photodetectors Based on Hybrid Graphene and Graphene Quantum Dots. ACS APPLIED MATERIALS & INTERFACES 2016; 8:466-71. [PMID: 26696193 DOI: 10.1021/acsami.5b09373] [Citation(s) in RCA: 34] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Stretchable devices possess great potential in a wide range of applications, such as biomedical and wearable gadgets and smart skin, which can be integrated with the human body. Because of their excellent flexibility, two-dimensional (2D) materials are expected to play an important role in the fabrication of stretchable devices. However, only a limited number of reports have been devoted to investigating stretchable devices based on 2D materials, and the stretchabilities were restricted in a very small strain. Moreover, there is no report related to the stretchable photodetectors derived from 2D materials. Herein, we demonstrate a highly stretchable and sensitive photodetector based on hybrid graphene and graphene quantum dots (GQDs). A unique rippled structure of poly(dimethylsiloxane) is used to support the graphene layer, which can be stretched under an external strain far beyond published reports. The ripple of the device can overcome the native stretchability limit of graphene and enhance the carrier generation in GQDs due to multiple reflections of photons between the ripples. Our strategy presented here can be extended to many other material systems, including other 2D materials. It therefore paves a key step for the development of stretchable electronics and optical devices.
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Affiliation(s)
- Chia-Wei Chiang
- Department of Physics and ‡Department of Chemistry, National Taiwan University , Taipei 106, Taiwan
| | - Golam Haider
- Department of Physics and ‡Department of Chemistry, National Taiwan University , Taipei 106, Taiwan
| | - Wei-Chun Tan
- Department of Physics and ‡Department of Chemistry, National Taiwan University , Taipei 106, Taiwan
| | - Yi-Rou Liou
- Department of Physics and ‡Department of Chemistry, National Taiwan University , Taipei 106, Taiwan
| | - Ying-Chih Lai
- Department of Physics and ‡Department of Chemistry, National Taiwan University , Taipei 106, Taiwan
| | - Rini Ravindranath
- Department of Physics and ‡Department of Chemistry, National Taiwan University , Taipei 106, Taiwan
| | - Huan-Tsung Chang
- Department of Physics and ‡Department of Chemistry, National Taiwan University , Taipei 106, Taiwan
| | - Yang-Fang Chen
- Department of Physics and ‡Department of Chemistry, National Taiwan University , Taipei 106, Taiwan
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20
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Chiu YC, Sun HS, Lee WY, Halila S, Borsali R, Chen WC. Oligosaccharide Carbohydrate Dielectrics toward High-Performance Non-volatile Transistor Memory Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2015; 27:6257-6264. [PMID: 26332569 DOI: 10.1002/adma.201502088] [Citation(s) in RCA: 25] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/01/2015] [Revised: 07/04/2015] [Indexed: 06/05/2023]
Abstract
Oligosaccharides are one of the most promising biomaterials because they are abundant, renewable, diversified, and biosourced. The use of oligo- or polysaccharides for high-performance non-volatile organic field-effect-transistor memory is demonstrated herein. The charge-storage mechanism is attributed to charged hydroxyl groups that induce stronger hydrogen bonding, thus leading to the stabilization of trapped charges. This study reveals a promising future for green memory devices.
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Affiliation(s)
- Yu-Cheng Chiu
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan, ROC
| | - Han-Sheng Sun
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan, ROC
| | - Wen-Ya Lee
- Department of Chemical Engineering and Biotechnology, National Taipei University of Technology, Taipei, 106, Taiwan, ROC
| | - Sami Halila
- Centre de Recherches sur les Macromolécules Végétales (CERMAV, UPR-CNRS 5301), Affiliated with Grenoble Alpes University, Member of Institut de Chimie Moléculaire de Grenoble (ICMG, FR-CNRS 2607) and Institut Carnot PolyNat, BP53, 38041, Grenoble CEDEX 9, France
| | - Redouane Borsali
- Centre de Recherches sur les Macromolécules Végétales (CERMAV, UPR-CNRS 5301), Affiliated with Grenoble Alpes University, Member of Institut de Chimie Moléculaire de Grenoble (ICMG, FR-CNRS 2607) and Institut Carnot PolyNat, BP53, 38041, Grenoble CEDEX 9, France
| | - Wen-Chang Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan, ROC
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21
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A Fully Transparent Resistive Memory for Harsh Environments. Sci Rep 2015; 5:15087. [PMID: 26455819 PMCID: PMC4601025 DOI: 10.1038/srep15087] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2015] [Accepted: 09/07/2015] [Indexed: 11/08/2022] Open
Abstract
A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 104 sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.
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22
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Zhou Y, Han ST, Yan Y, Zhou L, Huang LB, Zhuang J, Sonar P, Roy VAL. Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends. Sci Rep 2015; 5:10683. [PMID: 26029856 PMCID: PMC4450595 DOI: 10.1038/srep10683] [Citation(s) in RCA: 39] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/25/2015] [Accepted: 04/17/2015] [Indexed: 11/25/2022] Open
Abstract
Flexible memory cell array based on high mobility donor-acceptor diketopyrrolopyrrole polymer has been demonstrated. The memory cell exhibits low read voltage, high cell-to-cell uniformity and good mechanical flexibility, and has reliable retention and endurance memory performance. The electrical properties of the memory devices are systematically investigated and modeled. Our results suggest that the polymer blends provide an important step towards high-density flexible nonvolatile memory devices.
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Affiliation(s)
- Ye Zhou
- Department of Physics and Materials Science City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR
| | - Su-Ting Han
- Department of Physics and Materials Science City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR
| | - Yan Yan
- Department of Physics and Materials Science City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR
| | - Li Zhou
- Department of Physics and Materials Science City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR
| | - Long-Biao Huang
- Department of Physics and Materials Science City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR
| | - Jiaqing Zhuang
- Department of Physics and Materials Science City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR
| | - Prashant Sonar
- School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology (QUT), GPO Box 2434, Brisbane, QLD 4001, Australia
| | - V. A. L. Roy
- Department of Physics and Materials Science City University of Hong Kong, Tat Chee Avenue, Kowloon Tong, Hong Kong SAR
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23
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Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM. Physical and chemical mechanisms in oxide-based resistance random access memory. NANOSCALE RESEARCH LETTERS 2015; 10:120. [PMID: 25873842 PMCID: PMC4388104 DOI: 10.1186/s11671-015-0740-7] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/10/2014] [Accepted: 01/07/2015] [Indexed: 05/31/2023]
Abstract
In this review, we provide an overview of our work in resistive switching mechanisms on oxide-based resistance random access memory (RRAM) devices. Based on the investigation of physical and chemical mechanisms, we focus on its materials, device structures, and treatment methods so as to provide an in-depth perspective of state-of-the-art oxide-based RRAM. The critical voltage and constant reaction energy properties were found, which can be used to prospectively modulate voltage and operation time to control RRAM device working performance and forecast material composition. The quantized switching phenomena in RRAM devices were demonstrated at ultra-cryogenic temperature (4K), which is attributed to the atomic-level reaction in metallic filament. In the aspect of chemical mechanisms, we use the Coulomb Faraday theorem to investigate the chemical reaction equations of RRAM for the first time. We can clearly observe that the first-order reaction series is the basis for chemical reaction during reset process in the study. Furthermore, the activation energy of chemical reactions can be extracted by changing temperature during the reset process, from which the oxygen ion reaction process can be found in the RRAM device. As for its materials, silicon oxide is compatible to semiconductor fabrication lines. It is especially promising for the silicon oxide-doped metal technology to be introduced into the industry. Based on that, double-ended graphene oxide-doped silicon oxide based via-structure RRAM with filament self-aligning formation, and self-current limiting operation ability is demonstrated. The outstanding device characteristics are attributed to the oxidation and reduction of graphene oxide flakes formed during the sputter process. Besides, we have also adopted a new concept of supercritical CO2 fluid treatment to efficiently reduce the operation current of RRAM devices for portable electronic applications.
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Affiliation(s)
- Kuan-Chang Chang
- />Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan
| | - Ting-Chang Chang
- />Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
| | - Tsung-Ming Tsai
- />Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan
| | - Rui Zhang
- />Information Technology Center, BGP, China National Petroleum Corporation, Beijing, China
| | - Ya-Chi Hung
- />Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan
| | - Yong-En Syu
- />Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
| | - Yao-Feng Chang
- />Microelectronics Research Center, The University of Texas at Austin, Austin, TX 78758 USA
| | - Min-Chen Chen
- />Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
| | - Tian-Jian Chu
- />Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan
| | - Hsin-Lu Chen
- />Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan
| | - Chih-Hung Pan
- />Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan
| | - Chih-Cheng Shih
- />Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan
| | - Jin-Cheng Zheng
- />Department of Physics, Xiamen University, Xiamen, 361005 China
| | - Simon M Sze
- />Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan
- />Department of Electrical Engineering, Stanford University, Stanford, CA 94305 USA
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24
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Ji D, Donner AD, Wilde G, Hu W, Fuchs H. Poly(sodium-4-styrene sulfonate) (PSSNa)-assisted transferable flexible, top-contact high-resolution free-standing organic field-effect transistors. RSC Adv 2015. [DOI: 10.1039/c5ra21329k] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Here we demonstrate how, by means of poly(sodium-4-styrene sulfonate), one can successfully transfer the free-standing, flexible, high-resolution top-contact OFETs based on polystyrene insulator to arbitrary substrates.
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Affiliation(s)
- Deyang Ji
- Center for Nanotechnology
- Physikalisches Institut
- Westfälische Wilhelms-Universität
- 48149 Münster
- Germany
| | | | | | - Wenping Hu
- Beijing National Laboratory for Molecular Sciences
- Key Laboratory of Organic Solids
- Institute of Chemistry
- Chinese Academy of Sciences
- Beijing 100190
| | - Harald Fuchs
- Center for Nanotechnology
- Physikalisches Institut
- Westfälische Wilhelms-Universität
- 48149 Münster
- Germany
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25
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Lin WP, Liu SJ, Gong T, Zhao Q, Huang W. Polymer-based resistive memory materials and devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2014; 26:570-606. [PMID: 24339246 DOI: 10.1002/adma.201302637] [Citation(s) in RCA: 225] [Impact Index Per Article: 22.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2013] [Revised: 07/27/2013] [Indexed: 06/03/2023]
Abstract
Due to the advantages of good scalability, flexibility, low cost, ease of processing, 3D-stacking capability, and large capacity for data storage, polymer-based resistive memories have been a promising alternative or supplementary devices to conventional inorganic semiconductor-based memory technology, and attracted significant scientific interest as a new and promising research field. In this review, we first introduced the general characteristics of the device structures and fabrication, memory effects, switching mechanisms, and effects of electrodes on memory properties associated with polymer-based resistive memory devices. Subsequently, the research progress concerning the use of single polymers or polymer composites as active materials for resistive memory devices has been summarized and discussed. In particular, we consider a rational approach to their design and discuss how to realize the excellent memory devices and understand the memory mechanisms. Finally, the current challenges and several possible future research directions in this field have also been discussed.
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Affiliation(s)
- Wen-Peng Lin
- Key Laboratory for Organic Electronics & Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Wenyuan Road 9, Nanjing City, Jiangsu Province, 210023, China
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26
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Wang H, Meng F, Cai Y, Zheng L, Li Y, Liu Y, Jiang Y, Wang X, Chen X. Sericin for resistance switching device with multilevel nonvolatile memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2013; 25:5498-5503. [PMID: 23893500 DOI: 10.1002/adma.201301983] [Citation(s) in RCA: 103] [Impact Index Per Article: 9.4] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2013] [Revised: 06/04/2013] [Indexed: 06/02/2023]
Abstract
Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 10(6) have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.
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Affiliation(s)
- Hong Wang
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Website: http://www.ntu.edu.sg/home/chenxd/
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