Clean-lifting transfer of large-area residual-free graphene films

Clean Transfer of Two-Dimensional Materials: A Comprehensive Review

The growth of two-dimensional (2D) materials through chemical vapor deposition (CVD) has sparked a growing interest among both the industrial and academic communities. The interest stems from several key advantages associated with CVD, including high yield, high quality, and high tunability. In order to harness the application potentials of 2D materials, it is often necessary to transfer them from their growth substrates to their desired target substrates. However, conventional transfer methods introduce contamination that can adversely affect the quality and properties of the transferred 2D materials, thus limiting their overall application performance. This review presents a comprehensive summary of the current clean transfer methods for 2D materials with a specific focus on the understanding of interaction between supporting layers and 2D materials. The review encompasses various aspects, including clean transfer methods, post-transfer cleaning techniques, and cleanliness assessment. Furthermore, it analyzes and compares the advances and limitations of these clean transfer techniques. Finally, the review highlights the primary challenges associated with current clean transfer methods and provides an outlook on future prospects.

Charge Transfer Dynamics of Doped Graphene Electrodes for Organic Light-Emitting Diodes

Atomically thin graphene has attracted immense attention as a future transparent electrode for flat-panel displays owing to its excellent conductivity, optical transparency, and flexibility. In particular, a graphene doping process is essential for implementing graphene-based high-performance devices, and the development of a transparent cathode with a low work function is required to simplify the integration process of thin-film transistors and organic light-emitting diodes (OLEDs) into active matrix displays. In this study, a transparent n-doped graphene cathode is proposed for implementing inverted OLEDs through two types of cesium (Cs)-based doping techniques: a dipping method using wet chemicals and an evaporation method under a vacuum atmosphere. The changes in the chemical structures and work functions of the n-doped graphene electrodes, as well as their surface morphologies and transmittances, were systematically investigated. The n-type doping mechanism of graphene was investigated, and a close relationship between the electrical charge transfer characteristics of graphene transistors and the formation of C-O-Cs complexes was revealed. Finally, an effective Cs-doped graphene electrode was developed, exhibiting a dramatically decreased work function while maintaining high transmittance; therefore, the Cs-doped graphene cathode was successfully integrated with inverted OLEDs with a bottom-light emission structure that exhibited enhanced external quantum efficiency of graphene cathode-based OLEDs. Thus, our findings provide a better understanding of the doping strategies and potential of n-doped graphene as a transparent cathode for developing high-performance future displays.

A Green Approach for High Oxidation Resistance, Flexible Transparent Conductive Films Based on Reduced Graphene Oxide and Copper Nanowires

Copper nanowires (CuNWs)-based thin film is one of the potential alternatives to tin-doped indium oxide (ITO) in terms of transparent conductive films (TCFs). However, the severe problem of atmospheric oxidation restricts their practical applications. In this work, we develop a simple approach to fabricate highly stable TCFs through the dip-coating method using reduced graphene oxide (rGO) and CuNWs as the primary materials. Compared with previous works using toxic reduction agents, herein, the CuNWs are synthesized via a green aqueous process using glucose and lactic acid as the reductants, and rGO is prepared through the modified Hummers' method followed by a hydrogen-annealing process to form hydrogen-annealing-reduced graphene oxide (h-rGO). In the rGO/CuNWs films, the dip-coated graphene oxide layer can increase the adhesion of the CuNWs on the substrate, and the fabricated h-rGO/CuNWs can exhibit high atmospheric oxidation resistance and excellent flexibility. The sheet resistance of the h-rGO/CuNWs film only increased from 25.1 to 42.2 Ω/sq after exposure to ambient atmosphere for 30 days and remained almost unchanged after the dynamic bending test for 2500 cycles at a constant radius of 5.3 mm. The h-rGO/CuNWs TCF can be not only fabricated via a route with a superior inexpensive and safe method but also possessed competitive optoelectronic properties with high electrical stability and flexibility, demonstrating great opportunities for future optoelectronic applications.

Fragmented graphene synthesized on a dielectric substrate for THz applications

Fragmented multi-layered graphene films were directly synthesized via chemical vapor deposition (CVD) on dielectric substrates with a pre-deposited copper catalyst. We demonstrate that the thickness of the sacrificial copper film, process temperature, and growth time essentially influence the integrity, quality, and disorder of the synthesized graphene. Atomic force microscopy and Kelvin probe force microscopy measurements revealed the presence of nano-agglomerates and charge puddles. The potential gradients measured over the sample surface confirmed that the deposited graphene film possessed a multilayered structure, which was modelled as an ensemble of randomly oriented conductive prolate ellipsoids. THz time domain spectroscopy measurements gave theacconductivity of the graphene flakes and homogenized graphitic films as being around 1200 S cm^-1and 1000 S cm^-1, respectively. Our approach offers a scalable fabrication of graphene structures composed of graphene flakes, which have effective conductivity sufficient for a wide variety of THz applications.

Defects Produced during Wet Transfer Affect the Electrical Properties of Graphene

Graphene has been widely used due to its excellent electrical, mechanical and chemical properties. Defects produced during its transfer process will seriously affect the performance of graphene devices. In this paper, single-layer graphene was transferred onto glass and silicon dioxide (SiO₂) substrates by wet transfer technology, and the square resistances thereof were tested. Due to the different binding forces of the transferred graphene surfaces, there may have been pollutants present. PMMA residues, graphene laminations and other defects that occurred in the wet transfer process were analyzed by X-ray photoelectron spectroscopy and Raman spectroscopy. These defects influenced the square resistance of the produced graphene films, and of these defects, PMMA residue was the most influential; square resistance increased with increasing PMMA residue.

Recent Progress in the Transfer of Graphene Films and Nanostructures

The one-atom-thick graphene has excellent electronic, optical, thermal, and mechanical properties. Currently, chemical vapor deposition (CVD) graphene has received a great deal of attention because it provides access to large-area and uniform films with high-quality. This allows the fabrication of graphene based-electronics, sensors, photonics, and optoelectronics for practical applications. Zero bandgap, however, limits the application of a graphene film as electronic transistor. The most commonly used bottom-up approaches have achieved efficient tuning of the electronic bandgap by customizing well-defined graphene nanostructures. The postgrowth transfer of graphene films/nanostructures to a certain substrate is crucial in utilizing graphene in applicable devices. In this review, the basic growth mechanism of CVD graphene is first introduced. Then, recent advances in various transfer methods of as-grown graphene to target substrates are presented. The fabrication and transfer methods of graphene nanostructures are also provided, and then the transfer-related applications are summarized. At last, the challenging issues and the potential transfer-free approaches are discussed.

Graphene Transfer: Paving the Road for Applications of Chemical Vapor Deposition Graphene

Owing to the fascinating properties of graphene, fulfilling the promising characteristics of graphene in applications has ignited enormous scientific and industrial interest. Chemical vapor deposition (CVD) growth of graphene on metal substrates provides tantalizing opportunities for the large-area synthesis of graphene in a controllable manner. However, the tedious transfer of graphene from metal substrates onto desired substrates remains inevitable, and cracks of graphene membrane, transfer-induced doping, wrinkles as well as surface contamination can be incurred during the transfer, which highly degrade the performance of graphene. Furthermore, new issues can arise when moving to large-scale transfer at an industrial scale, thus cost-efficient and environment-friendly transfer techniques also become imperative. The aim of this review is to provide a comprehensive understanding of transfer-related issues and the corresponding experimental solutions and to provide an outlook for future transfer techniques of CVD graphene films on an industrial scale.

Performance Improvement of Residue-Free Graphene Field-Effect Transistor Using Au-Assisted Transfer Method

We report a novel graphene transfer technique for fabricating graphene field-effect transistors (FETs) that avoids detrimental organic contamination on a graphene surface. Instead of using an organic supporting film like poly(methyl methacrylate) (PMMA) for graphene transfer, Au film is directly deposited on the as-grown graphene substrate. Graphene FETs fabricated using the established organic film transfer method are easily contaminated by organic residues, while Au film protects graphene channels from these contaminants. In addition, this method can also simplify the device fabrication process, as the Au film acts as an electrode. We successfully fabricated graphene FETs with a clean surface and improved electrical properties using this Au-assisted transfer method.

Fabrication of extreme ultraviolet lithography pellicle with nanometer-thick graphite film by sublimation of camphor supporting layer

An extreme ultraviolet (EUV) pellicle consists of freestanding thin films on a frame; these films are tens of nanometers in thickness and can include Si, SiN_X, or graphite. Nanometer-thick graphite films (NGFs), synthesized via chemical vapor deposition on a metal catalyst, are used as a pellicle material. The most common method to transfer NGFs onto a substrate or a frame is to use polymethyl methacrylate (PMMA) as a supporting layer. However, this PMMA-mediated technique involves several disadvantages in term of manufacturing NGF EUV pellicles. When removing the PMMA using acetone or O₂plasma, defects or deflections can occur in the NGFs. Furthermore, PMMA residues are generally present on large-area NGFs. In this study, a transfer method using camphor instead of PMMA as the supporting layer was developed to overcome these problems. After the camphor/NGF was formed on the frame, camphor was removed via sublimation in an atmosphere of ethanol vapor. This study investigated the deposition and sublimation of camphor, and confirmed that no residue was present and no deflection or defects were observed in the NGFs. Thus, a large-area NGF pellicle was successfully fabricated using the camphor transfer process.

Traction-separation laws of graphene grain boundaries

Molecular dynamics simulations are used to extract the traction-separation laws (TSLs) of symmetric grain boundaries of graphene. Grain boundaries with realistic atomic structures are constructed using different types of dislocations. The TSLs of grain boundaries are extracted by using cohesive zone volume elements (CZVEs) ahead of the crack tip. The traction and separation of each cohesive zone volume element are calculated during the crack growth. The traction and separation values obtained for the cohesive elements predict that the TSLs of grain boundaries have a bilinear form. The areas under the traction-separation curves are used to calculate the separation energy of the grain boundaries. The results show that as the grain boundary misorientation angle increases the separation energy of the grain boundaries decreases. The impact of temperature on the traction separation laws is studied. The results show that, with an increase of the temperature from 0.1 K to 300 K, the separation energy first increases to reach its peak at around 25 K and then slightly decreases.

Large-Size Suspended Mono-Layer Graphene Film Transfer Based on the Inverted Floating Method

Suspended graphene can perfectly present the excellent material properties of graphene, which has a good application prospect in graphene sensors. The existing suspended graphene pressure sensor has several problems that need to be solved, one of which is the fabrication of a suspended sample. It is still very difficult to obtain large-size suspended graphene films with a high integrity that are defect-free. Based on the simulation and analysis of the kinetic process of the traditional suspended graphene release process, a novel setup for large-size suspended graphene release was designed based on the inverted floating method (IFM). The success rate of the single-layer suspended graphene with a diameter of 200 μm transferred on a stainless-steel substrate was close to 50%, which is greatly improved compared with the traditional impregnation method. The effects of the defects and burrs around the substrate cavity on the stress concentration of graphene transfer explain why the transfer success rate of large-size suspended graphene is not high. This research lays the foundation for providing large-size suspended graphene films in the area of graphene high-precision sensors.

Interface Engineering of a Silicon/Graphene Heterojunction Photodetector via a Diamond-Like Carbon Interlayer

Silicon/graphene nanowalls (Si/GNWs) heterojunctions with excellent integrability and sensitivity show an increasing potential in optoelectronic devices. However, the performance is greatly limited by inferior interfacial adhesion and week electronic transport caused by the horizontal buffer layer. Herein, a diamond-like carbon (DLC) interlayer is first introduced to construct Si/DLC/GNWs heterojunctions, which can significantly change the growth behavior of the GNWs film, avoiding the formation of horizontal buffer layers. Accordingly, a robust diamond-like covalent bond with a remarkable enhancement of the interfacial adhesion is yielded, which notably improves the complementary metal oxide semiconductor compatibility for photodetector fabrication. Importantly, the DLC interlayer is verified to undergo a graphitization transition during the high-temperature growth process, which is beneficial to pave a vertical conductive path and facilitate the transport of photogenerated carriers in the visible and near-infrared regions. As a result, the Si/DLC/GNWs heterojunction detectors can simultaneously exhibit improved photoresponsivity and response speed, compared with the counterparts without DLC interlayers. The introduction of the DLC interlayer might provide a universal strategy to construct hybrid interfaces with high performance in next-generation optoelectronic devices.

Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices

The development of a controllable, selective, and repeatable etch process is crucial for controlling the layer thickness and patterning of two-dimensional (2D) materials. However, the atomically thin dimensions and high structural similarity of different 2D materials make it difficult to adapt conventional thin-film etch processes. In this work, we propose a selective, damage-free atomic layer etch (ALE) that enables layer-by-layer removal of monolayer WSe₂ without altering the physical, optical, and electronic properties of the underlying layers. The etch uses a top-down approach where the topmost layer is oxidized in a self-limited manner and then removed using a selective etch. Using a comprehensive set of material, optical, and electrical characterization, we show that the quality of our ALE processed layers is comparable to that of pristine layers of similar thickness. The ALE processed WSe₂ layers preserve their bright photoluminescence characteristics and possess high room-temperature hole mobilities of 515 cm²/V·s, essential for fabricating high-performance 2D devices. Further, using graphene as a testbed, we demonstrate the fabrication of ultra-clean 2D devices using a sacrificial monolayer WSe₂ layer to protect the channel during processing, which is etched in the final process step in a technique we call sacrificial WSe₂ with ALE processing (SWAP). The graphene transistors made using the SWAP technique demonstrate high room-temperature field-effect mobilities, up to 200,000 cm²/V·s, better than previously reported unencapsulated graphene devices.

Tuning of the polariton modes induced by longitudinal strong coupling in the graphene hybridized DBR cavity

In this Letter, we construct a graphene hybridized distributed Bragg reflector (DBR) cavity, where spatially longitudinal strong coupling occurs between the Tamm plasmon polaritons (TPPs) existing around the graphene layer and the cavity mode (CM) existing in the DBR cavity. As a result, two hybrid polariton modes emerge, which contain both the TPP and the CM components. In the simulation, we demonstrate that the resonant frequencies and the damping rates of the polariton modes can be actively tuned by the graphene Fermi level and the incident angle of light. Besides, the coupling strength and the damping rates are also passively tuned by the pair number of the layers in the DBR. Theoretically, we analyze the TPP-CM strong coupling by the coupled harmonic oscillator equations, which help to explain the regulation process. The controllable TPP-CM longitudinal strong coupling with two absorption bands may achieve potential applications in developing graphene-based active optoelectronic and polaritonic devices in terahertz waves.

Towards large-scale graphene transfer

The transfer process is crucial for obtaining high-quality graphene for its large-scale industrial application. In this review, graphene transfer methods are systematically classified along with an analysis of the contamination or impurity of graphene that is introduced during the transfer process. Two key processes are emphasized, the substrate removal process and the direct/indirect transfer of graphene. Based on the efficiency and cost factors of industrial scale production, various transfer methods are summarized and evaluated. Potential transfer technologies and future research directions for industrial application are prospected.

Graphene and Poly(3,4-ethylene dioxythiophene):Poly(4-styrenesulfonate) on Nonwoven Fabric as a Room Temperature Metal and Its Application as Dry Electrodes for Electrocardiography

Highly conductive, metal-like poly(ethylene terephthalate) (PET) nonwoven fabric was prepared by coating poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) containing dimethyl sulfoxide (DMSO) onto PET nonwoven fabric previously coated with graphene/graphite. The sheet resistance of the original nonwoven fabric decreases from >80 MΩ□^-1 to 1.1 Ω□^-1 after coating with 10.7 wt % graphene and 5.48 wt % PEDOT:PSS with a maximum current at breakdown of 4 A. This sheet resistance is lower than previously reported sheet resistances of fabrics coated with graphene films, PEDOT:PSS films, or PEDOT:PSS coated fabrics from the literature. The effect of temperature on the resistance of graphene/PEDOT:PSS coated fabric has revealed that the resistance decreases with increasing temperature, analogous to semiconductors, with a clear semiconductor-metal transition occurring at 290 K. Finally, a coating of 18 wt % graphene/graphite and 2.5 wt % PEDOT:PSS (R_s = 5.5 Ω□^-1) screen printed on the nonwoven fabric was shown to function as an electrode for electrocardiography without any hydrogel and with dry skin conditions. This composite coating finds application in wearable electronics for military and consumer sectors.

A Strategy to Synthesize Multilayer Graphene in Arc-Discharge Plasma in a Semi-Opened Environment

Graphene, as the earliest discovered two-dimensional (2D) material, possesses excellently physical and chemical properties. Vast synthetic strategies, including chemical vapor deposition, mechanical exfoliation, and chemical reduction, are proposed. In this paper, a method to synthesize multilayer graphene in a semi-opened environment is presented by introducing arc-discharge plasma technology. Compared with previous technologies, the toxic gases and hazardous chemical components are not generated in the whole process. The synthesized carbon materials were characterized by transmission electron microscopy, atomic force microscopy, X-ray diffraction, and Raman spectra technologies. The paper offers an idea to synthesize multilayer graphene in a semi-opened environment, which is a development to produce graphene with arc-discharge plasma.

Single-step growth of graphene and graphene-based nanostructures by plasma-enhanced chemical vapor deposition

The realization of many promising technological applications of graphene and graphene-based nanostructures depends on the availability of reliable, scalable, high-yield and low-cost synthesis methods. Plasma enhanced chemical vapor deposition (PECVD) has been a versatile technique for synthesizing many carbon-based materials, because PECVD provides a rich chemical environment, including a mixture of radicals, molecules and ions from hydrocarbon precursors, which enables graphene growth on a variety of material surfaces at lower temperatures and faster growth than typical thermal chemical vapor deposition. Here we review recent advances in the PECVD techniques for synthesis of various graphene and graphene-based nanostructures, including horizontal growth of monolayer and multilayer graphene sheets, vertical growth of graphene nanostructures such as graphene nanostripes with large aspect ratios, direct and selective deposition of monolayer and multi-layer graphene on nanostructured substrates, and growth of multi-wall carbon nanotubes. By properly controlling the gas environment of the plasma, it is found that no active heating is necessary for the PECVD growth processes, and that high-yield growth can take place in a single step on a variety of surfaces, including metallic, semiconducting and insulating materials. Phenomenological understanding of the growth mechanisms are described. Finally, challenges and promising outlook for further development in the PECVD techniques for graphene-based applications are discussed.

A Universal Stamping Method of Graphene Transfer for Conducting Flexible and Transparent Polymers

Transfer method of chemically vapor deposition graphene is an appealing issue to realize its application as flexible and transparent electrodes. A universal stamping method to transfer as grown graphene from copper onto different flexible and transparent polymers (FTPs) reported here ensures simple, robust, rapid, clean and low-cost. This method relies on coating ethylene vinyl acetate (EVA) onto the as grown graphene, binding EVA coated graphene/Cu with FTPs and delamination by hydrogen bubbling process, which is analogous to the method used by stamping process where ink carries the imprint of the object onto any materials. The fate of the stamping method depends on how strongly the adhesion of EVA coated graphene/Cu with target FTPs. Interestingly, we have found that the thin film of EVA/graphene/Cu can only bind strongly with the FTPs of less than 25 µm in thickness and lower glass transition temperature value to the EVA while wide range of other FTPs are considered upon surface engineering to enhance the binding strength between FTPs and EVA. What’s more, the electrical performance was investigated with a demonstration of triboelectric nanogenerators which confirmed the reliability of graphene transfer onto the FTPs and prospect for the development of flexible and transparent electronics.

Controllable Growth of Graphene on Liquid Surfaces

Controllable fabrication of graphene is necessary for its practical application. Chemical vapor deposition (CVD) approaches based on solid metal substrates with morphology-rich surfaces, such as copper (Cu) and nickel (Ni), suffer from the drawbacks of inhomogeneous nucleation and uncontrollable carbon precipitation. Liquid substrates offer a quasiatomically smooth surface, which enables the growth of uniform graphene layers. The fast surface diffusion rates also lead to unique growth and etching kinetics for achieving graphene grains with novel morphologies. The rheological surface endows the graphene grains with self-adjusted rotation, alignment, and movement that are driven by specific interactions. The intermediary-free transfer or the direct growth of graphene on insulated substrates is demonstrated using liquid metals. Here, the controllable growth process of graphene on a liquid surface to promote the development of attractive liquid CVD strategies is in focus. The exciting progress in controlled growth, etching, self-assembly, and delivery of graphene on a liquid surface is presented and discussed in depth. In addition, prospects and further developments in these exciting fields of graphene growth on a liquid surface are discussed.

Transparent Conductive Electrodes Based on Graphene-Related Materials

Transparent conducting electrodes (TCEs) are the most important key component in photovoltaic and display technology. In particular, graphene has been considered as a viable substitute for indium tin oxide (ITO) due to its optical transparency, excellent electrical conductivity, and chemical stability. The outstanding mechanical strength of graphene also provides an opportunity to apply it as a flexible electrode in wearable electronic devices. At the early stage of the development, TCE films that were produced only with graphene or graphene oxide (GO) were mainly reported. However, since then, the hybrid structure of graphene or GO mixed with other TCE materials has been investigated to further improve TCE performance by complementing the shortcomings of each material. This review provides a summary of the fabrication technology and the performance of various TCE films prepared with graphene-related materials, including graphene that is grown by chemical vapor deposition (CVD) and GO or reduced GO (rGO) dispersed solution and their composite with other TCE materials, such as carbon nanotubes, metal nanowires, and other conductive organic/inorganic material. Finally, several representative applications of the graphene-based TCE films are introduced, including solar cells, organic light-emitting diodes (OLEDs), and electrochromic devices.

State-of-the-Art and Future Prospects for Atomically Thin Membranes from 2D Materials

Atomically thin 2D materials, such as graphene, hexagonal boron-nitride, and others, offer new possibilities for ultrathin barrier and membrane applications. While the impermeability of pristine 2D materials to gas molecules, such as He, allows the realization of the thinnest physical barrier, nanoscale vacancy defects in the 2D material lattice manifest as nanopores in an atomically thin membrane. Such nanoporous atomically thin membranes (NATMs) present potential for enabling ultrahigh permeance and selectivity in a wide range of novel separation processes. Herein, the transport properties observed in NATMs are described and recent experimental progress achieved in their fabrication is summarized. Some of the challenges in NATM scale-up for practical applications are highlighted and several opportunities are identified, including the possibility of blending traditional membrane-processing approaches. Finally, a technological roadmap is presented with a contextual discussion for NATMs to progress from research to applications.

Bridging the Gap between Reality and Ideal in Chemical Vapor Deposition Growth of Graphene

Graphene, in its ideal form, is a two-dimensional (2D) material consisting of a single layer of carbon atoms arranged in a hexagonal lattice. The richness in morphological, physical, mechanical, and optical properties of ideal graphene has stimulated enormous scientific and industrial interest, since its first exfoliation in 2004. In turn, the production of graphene in a reliable, controllable, and scalable manner has become significantly important to bring us closer to practical applications of graphene. To this end, chemical vapor deposition (CVD) offers tantalizing opportunities for the synthesis of large-area, uniform, and high-quality graphene films. However, quite different from the ideal 2D structure of graphene, in reality, the currently available CVD-grown graphene films are still suffering from intrinsic defective grain boundaries, surface contaminations, and wrinkles, together with low growth rate and the requirement of inevitable transfer. Clearly, a gap still exits between the reality of CVD-derived graphene, especially in industrial production, and ideal graphene with outstanding properties. This Review will emphasize the recent advances and strategies in CVD production of graphene for settling these issues to bridge the giant gap. We begin with brief background information about the synthesis of nanoscale carbon allotropes, followed by the discussion of fundamental growth mechanism and kinetics of CVD growth of graphene. We then discuss the strategies for perfecting the quality of CVD-derived graphene with regard to domain size, cleanness, flatness, growth rate, scalability, and direct growth of graphene on functional substrate. Finally, a perspective on future development in the research relevant to scalable growth of high-quality graphene is presented.

Copper-Vapor-Assisted Growth and Defect-Healing of Graphene on Copper Surfaces

Although there is significant progress in the chemical vapor deposition (CVD) of graphene on Cu surfaces, the industrial application of graphene is not realized yet. One of the most critical obstacles that limit the commercialization of graphene is that CVD graphene contains too many vacancies or sp³ -type defects. Therefore, further investigation of the growth mechanism is still required to control the defects of graphene. During the growth of graphene, sublimation of the Cu catalyst to produce Cu vapor occurs inevitably because the process temperature is close to the melting point of Cu. However, to date few studies have investigated the effects of Cu vapor on graphene growth. In this study, how the Cu vapor produced by sublimation affects the chemical vapor deposition of graphene on Cu surfaces is investigated. It is found that the presence of Cu vapor enlarges the graphene grains and enhances the efficiency of the defect-healing of graphene by CH₄ . It is elucidated that these effects are due to the removal by Cu vapor of carbon adatoms from the Cu surface and oxygen-functionalized carbons from graphene. Finally, these insights are used to develop a method for the synthesis of uniform and high-quality graphene.

Direct Growth of Highly Stable Patterned Graphene on Dielectric Insulators using a Surface-Adhered Solid Carbon Source

A novel method is described for the direct growth of patterned graphene on dielectric substrates by chemical vapor deposition (CVD) in the presence of Cu vapor and using a solid aromatic carbon source, 1,2,3,4-tetraphenylnapthalene (TPN), as the precursor. The UV/O₃ treatment of the TPN film both crosslinks TPN and results in a strong interaction between the substrate and the TPN that prevents complete sublimation of the carbon source from the substrate during CVD. Substrate-adhered crosslinked TPN is successfully converted to graphene on the substrate without any organic contamination. The graphene synthesized by this method shows excellent mechanical and chemical stability. This process also enables the simultaneous patterning of graphene materials, which can thus be used as transparent electrodes for electronic devices. The proposed method for the synthesis directly on substrates of patterned graphene is expected to have wide applications in organic and soft hybrid electronics.

Stabilization of hybrid perovskite CH3NH3PbI3 thin films by graphene passivation

We report the long-term stability of water-sensitive hybrid perovskites CH₃NH₃PbI₃ that were protected with monolayer graphene. This successful passivation was enabled by our development of a new water-free and polymer-free graphene transfer method. Monolayer graphene samples grown by plasma-enhanced chemical vapor deposition and transferred onto different substrates with the water/polymer-free method were found to preserve their high-quality characteristics after the transfer, as manifested by the studies of Raman, X-ray and ultraviolet photoemission spectroscopy (XPS and UPS), optical absorption, and sheet resistance. Additionally, XPS, UPS and optical absorption studies of fully graphene-covered CH₃NH₃PbI₃ thin films showed spectral invariance even after 3 months, which was in sharp contrast to the drastic spectral changes after merely one week in control CH₃NH₃PbI₃ samples without graphene protection. This successful demonstration of the graphene-enabled passivation and long-term stability of CH₃NH₃PbI₃ thin films therefore opens up a new pathway towards realistic photovoltaic applications of hybrid perovskites.

Sublimation-assisted graphene transfer technique based on small polyaromatic hydrocarbons

Advances in the chemical vapor deposition (CVD) growth of graphene have made this material a very attractive candidate for a number of applications including transparent conductors, electronics, optoeletronics, biomedical devices and energy storage. The CVD method requires transfer of graphene on a desired substrate and this is most commonly accomplished with polymers. The removal of polymer carriers is achieved with organic solvents or thermal treatment which makes this approach inappropriate for application to plastic thin films such as polyethylene terephthalate substrates. An ultraclean graphene transfer method under mild conditions is highly desired. In this article, we report a naphthalene-assisted graphene transfer technique which provides a reliable route to residue-free transfer of graphene to both hard and flexible substrates. The quality of the transferred graphene was characterized with atomic force microscopy, scanning electron microscopy, and Raman spectroscopy. Field effect transistors, based on the naphthalene-transfered graphene, were fabricated and characterized. This work has the potential to broaden the applications of CVD graphene in fields where ultraclean graphene and mild graphene transfer conditions are required.

Mass production and industrial applications of graphene materials

Graphene is considered a promising material for industrial application based on the intensive laboratory-scale research in the fields of physics, chemistry, materials science and engineering, and biology over the last decade. Many companies have thus started to pursue graphene materials on a scale of tons (for the flake material) or hundreds of thousands of square meters (for the film material) for industrial applications. Though the graphene industry is still in its early stages, very significant progress in mass production and certain industrial applications has become obvious. In this report, we aim to give a brief review of the mass production of graphene materials for some industrial applications and summarize some features or challenges for graphene in the marketplace.

A Novel Fabrication of 3.6 nm High Graphene Nanochannels for Ultrafast Ion Transport

In an experiment based on electroosmotic ion transport, 3.6 nm high graphene nanochannels with a clean, smooth and hydrophobic surface and large slip length have 115 times greater ionic conductivity than SiO₂ nanochannels.

A Facile Reduction Method for Roll-to-Roll Production of High Performance Graphene-Based Transparent Conductive Films

A facile roll-to-roll method is developed for fabricating reduced graphene oxide (rGO)-based flexible transparent conductive films. A Sn²⁺ /ethanol reduction system and a rationally designed fast coating-drying-washing technique are proven to be highly efficient for low-cost continuous production of large-area rGO films and patterned rGO films, extremely beneficial toward the manufacture of flexible photoelectronic devices.

Compressive Strength Enhancement of Vertically Aligned Carbon Nanotube Forests by Constraint of Graphene Sheets

We fabricated a 3D sandwich hybrid material composed of graphene and vertically aligned carbon nanotube forests (VACNTs) using chemical vapor deposition. The graphene was first synthesized on Cu foil. Then it was transferred to a substrate which had a pre-deposited catalyst Fe film and a buffer film of Al₂O₃ for the growth of VACNTs. The VACNTs were grown underneath the graphene and lifted up the graphene. The graphene, with its edges anchored on the Al₂O₃, provided a constrained boundary condition for the VACNTs and hence affected the growth height and mechanical strength of the VACNTs. We prepared three groups of samples: VACNTs without graphene, VACNTs with graphene transferred once (1-Gr/VACNTs), and VACNTs with graphene transferred twice (2-Gr/VACNTs). A nano-indentation system was used to measure the reduced compressive modulus (Er) and hardness (H). The Er and H of Gr/VACNTs increased with the number of transfers of the anchored graphene. The 2-Gr/VACNTs had the largest Er and H, 23.8 MPa and 912 KPa, which are 6.6 times and 5.2 times those of VACNTs without the anchored graphene, respectively. In this work, we have demonstrated a simple method to increase the mechanical properties and suppress the height of VACNTs with the anchored graphene and number of transfers.

The physics and chemistry of graphene-on-surfaces

This review describes the major “graphene-on-surface” structures and examines the roles of their properties in governing the overall performance for specific applications.

Feasibility of polyethylene film as both supporting material for transfer and target substrate for flexible strain sensor of CVD graphene grown on Cu foil

Facile utilization of polyethylene (PE) film as both the supporting material for graphene transfer from copper foil and the target substrate for flexible strain sensor preparation in a single route.

Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes

We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.

Highly Enhanced Electromechanical Stability of Large-Area Graphene with Increased Interfacial Adhesion Energy by Electrothermal-Direct Transfer for Transparent Electrodes

Graphene, a two-dimensional sheet of carbon atoms in a hexagonal lattice structure, has been extensively investigated for research and industrial applications as a promising material with outstanding electrical, mechanical, and chemical properties. To fabricate graphene-based devices, graphene transfer to the target substrate with a clean and minimally defective surface is the first step. However, graphene transfer technologies require improvement in terms of uniform transfer with a clean, nonfolded and nontorn area, amount of defects, and electromechanical reliability of the transferred graphene. More specifically, uniform transfer of a large area is a key challenge when graphene is repetitively transferred onto pretransferred layers because the adhesion energy between graphene layers is too low to ensure uniform transfer, although uniform multilayers of graphene have exhibited enhanced electrical and optical properties. In this work, we developed a newly suggested electrothermal-direct (ETD) transfer method for large-area high quality monolayer graphene with less defects and an absence of folding or tearing of the area at the surface. This method delivers uniform multilayer transfer of graphene by repetitive monolayer transfer steps based on high adhesion energy between graphene layers and the target substrate. To investigate the highly enhanced electromechanical stability, we conducted mechanical elastic bending experiments and reliability tests in a highly humid environment. This ETD-transferred graphene is expected to replace commercial transparent electrodes with ETD graphene-based transparent electrodes and devices such as a touch panels with outstanding electromechanical stability.

Carbon Nanomembranes

Carbon nanomembranes (CNMs) are synthetic 2D carbon sheets with tailored physical or chemical properties. These depend on the structure, molecular composition, and surroundings on either side. Due to their molecular thickness, they can be regarded as "interfaces without bulk" separating regions of different gaseous, liquid, or solid components and controlling the materials exchange between them. Here, a universal scheme for the fabrication of 1 nm-thick, mechanically stable, functional CNMs is presented. CNMs can be further modified, for example perforated by ion bombardment or chemically functionalized by the binding of other molecules onto the surfaces. The underlying physical and chemical mechanisms are described, and examples are presented for the engineering of complex surface architectures, e.g., nanopatterns of proteins, fluorescent dyes, or polymer brushes. A simple transfer procedure allows CNMs to be placed on various support structures, which makes them available for diverse applications: supports for electron and X-ray microscopy, nanolithography, nanosieves, Janus nanomembranes, polymer carpets, complex layered structures, functionalization of graphene, novel nanoelectronic and nanomechanical devices. To close, the potential of CNMs in filtration and sensorics is discussed. Based on tests for the separation of gas molecules, it is argued that ballistic membranes may play a prominent role in future efforts of materials separation.

Progress and Challenges in Transfer of Large-Area Graphene Films

Graphene, the thinnest, strongest, and stiffest material with exceptional thermal conductivity and electron mobility, has increasingly received world-wide attention in the past few years. These unique properties may lead to novel or improved technologies to address the pressing global challenges in many applications including transparent conducting electrodes, field effect transistors, flexible touch screen, single-molecule gas detection, desalination, DNA sequencing, osmotic energy production, etc. To realize these applications, it is necessary to transfer graphene films from growth substrate to target substrate with large-area, clean, and low defect surface, which are crucial to the performances of large-area graphene devices. This critical review assesses the recent development in transferring large-area graphene grown on Fe, Ru, Co, Ir, Ni, Pt, Au, Cu, and some nonmetal substrates by using various synthesized methods. Among them, the transfers of the most attention kinds of graphene synthesized on Cu and SiC substrates are discussed emphatically. The advances and the main challenges of each wet and dry transfer method for obtaining the transferred graphene film with large-area, clean, and low defect surface are also reviewed. Finally, the article concludes the most promising methods and the further prospects of graphene transfer.

Facet-Mediated Growth of High-Quality Monolayer Graphene on Arbitrarily Rough Copper Surfaces

A synthetic approach for high-quality graphene on rough Cu surfaces via chemical vapor deposition is proposed. High-quality graphene is synthesized on rough Cu surfaces by inducing surface faceting of Cu surfaces prior to graphene growth. The electron mobility of synthesized graphene on the rough Cu surfaces is enhanced to 10 335 cm(2) V(-1) s(-1).

Direct Growth of Patterned Graphene

The direct growth of single-layer graphene patterns via electron irradiation of aromatic self-assembled monolayers and subsequent annealing is demonstrated. In this way, a reduction in the number of necessary manufacturing steps is achieved. The formed micro- and nanostructures can be arbitrarily shaped and eventually implemented in a manifold of applications.

Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates

We developed an effective graphene transfer method for graphene/silicon Schottky diodes on a wafer as large as 6 inches. Graphene grown on a large scale substrate was passivated and sealed with a gold layer, protecting graphene from any possible contaminant and keeping good electrical contact. The Au/graphene was transferred by the tension-assisted transfer process without polymer residues. The gold film itself was used directly as the electrodes of a Schottky diode. We demonstrated wafer-scale integration of graphene/silicon Schottky diode using the proposed transfer process. The transmission electron microscopy analysis and relatively low ideality factor of the diodes indicated fewer defects on the interface than those obtained using the conventional poly(methyl methacrylate)-assisted transfer method. We further demonstrated gas sensors as an application of graphene Schottky diodes.

Transfer of Chemically Modified Graphene with Retention of Functionality for Surface Engineering

Single-layer graphene chemically reduced by the Birch process delaminates from a Si/SiOx substrate when exposed to an ethanol/water mixture, enabling transfer of chemically functionalized graphene to arbitrary substrates such as metals, dielectrics, and polymers. Unlike in previous reports, the graphene retains hydrogen, methyl, and aryl functional groups during the transfer process. This enables one to functionalize the receiving substrate with the properties of the chemically modified graphene (CMG). For instance, magnetic force microscopy shows that the previously reported magnetic properties of partially hydrogenated graphene remain after transfer. We also transfer hydrogenated graphene from its copper growth substrate to a Si/SiOx wafer and thermally dehydrogenate it to demonstrate a polymer- and etchant-free graphene transfer for potential use in transmission electron microscopy. Finally, we show that the Birch reduction facilitates delamination of CMG by weakening van der Waals forces between graphene and its substrate.

Automatic graphene transfer system for improved material quality and efficiency

In most applications based on chemical vapor deposition (CVD) graphene, the transfer from the growth to the target substrate is a critical step for the final device performance. Manual procedures are time consuming and depend on handling skills, whereas existing automatic roll-to-roll methods work well for flexible substrates but tend to induce mechanical damage in rigid ones. A new system that automatically transfers CVD graphene to an arbitrary target substrate has been developed. The process is based on the all-fluidic manipulation of the graphene to avoid mechanical damage, strain and contamination, and on the combination of capillary action and electrostatic repulsion between the graphene and its container to ensure a centered sample on top of the target substrate. The improved carrier mobility and yield of the automatically transferred graphene, as compared to that manually transferred, is demonstrated by the optical and electrical characterization of field-effect transistors fabricated on both materials. In particular, 70% higher mobility values, with a 30% decrease in the unintentional doping and a 10% strain reduction are achieved. The system has been developed for lab-scale transfer and proved to be scalable for industrial applications.

Healing Graphene Defects Using Selective Electrochemical Deposition: Toward Flexible and Stretchable Devices

Graphene produced by chemical-vapor-deposition inevitably has defects such as grain boundaries, pinholes, wrinkles, and cracks, which are the most significant obstacles for the realization of superior properties of pristine graphene. Despite efforts to reduce these defects during synthesis, significant damages are further induced during integration and operation of flexible and stretchable applications. Therefore, defect healing is required in order to recover the ideal properties of graphene. Here, the electrical and mechanical properties of graphene are healed on the basis of selective electrochemical deposition on graphene defects. By exploiting the high current density on the defects during the electrodeposition, metal ions such as silver and gold can be selectively reduced. The process is universally applicable to conductive and insulating substrates because graphene can serve as a conducting channel of electrons. The physically filled metal on the defects improves the electrical conductivity and mechanical stretchability by means of reducing contact resistance and crack density. The healing of graphene defects is enabled by the solution-based room temperature electrodeposition process, which broadens the use of graphene as an engineering material.

Support-Free Transfer of Ultrasmooth Graphene Films Facilitated by Self-Assembled Monolayers for Electronic Devices and Patterns

We explored a support-free method for transferring large area graphene films grown by chemical vapor deposition to various fluoric self-assembled monolayer (F-SAM) modified substrates including SiO2/Si wafers, polyethylene terephthalate films, and glass. This method yields clean, ultrasmooth, and high-quality graphene films for promising applications such as transparent, conductive, and flexible films due to the absence of residues and limited structural defects such as cracks. The F-SAM introduced in the transfer process can also lead to graphene transistors with enhanced field-effect mobility (up to 10,663 cm(2)/Vs) and resistance modulation (up to 12×) on a standard silicon dioxide dielectric. Clean graphene patterns can be realized by transfer of graphene onto only the F-SAM modified surfaces.

Water flattens graphene wrinkles: laser shock wrapping of graphene onto substrate-supported crystalline plasmonic nanoparticle arrays

Hot electron injection into an exceptionally high mobility material can be realized in graphene-plasmonic nanoantenna hybrid nanosystems, which can be exploited for several front-edge applications including photovoltaics, plasmonic waveguiding and molecular sensing at trace levels. Wrinkling instabilities of graphene on these plasmonic nanostructures, however, would cause reactive oxygen or sulfur species to diffuse and react with the materials, decrease charge transfer rates and block intense hot-spots. No ex situ graphene wrapping technique has been explored so far to control these wrinkles. Here, we present a method to generate seamless integration by using water as a flyer to transfer the laser shock pressure to wrap graphene onto plasmonic nanocrystals. This technique decreases the interfacial gap between graphene and the covered substrate-supported plasmonic nanoparticle arrays by exploiting a shock pressure generated by the laser ablation of graphite and the water impermeable nature of graphene. Graphene wrapping of chemically synthesized crystalline gold nanospheres, nanorods and bipyramids with different field confinement capabilities is investigated. A combined experimental and computational method, including SEM and AFM morphological investigation, molecular dynamics simulation, and Raman spectroscopy characterization, is used to demonstrate the effectiveness of this technique. Graphene covered gold bipyramid exhibits the best result among the hybrid nanosystems studied. We have shown that the hybrid system fabricated by laser shock can be used for enhanced molecular sensing. The technique developed has the characteristics of tight integration, and chemical/thermal stability, is instantaneous in nature, possesses a large scale and room temperature processing capability, and can be further extended to integrate other 2D materials with various 0-3D nanomaterials.

Roll-to-Roll Green Transfer of CVD Graphene onto Plastic for a Transparent and Flexible Triboelectric Nanogenerator

A novel roll-to-roll, etching-free, clean transfer of CVD-grown graphene from copper to plastic using surface-energy-assisted delamination in hot deionized water is reported. The delamination process is realized by water penetration between the hydrophobic graphene and a hydrophilic native oxide layer on a copper foil.The transferred graphene on plastic is used as a high-output flexible and transparent triboelectric nanogenerator.