Facile Synthesis of Single Crystal PtSe2 Nanosheets for Nanoscale Electronics

High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers

Electronic devices employing two-dimensional (2D) van der Waals (vdW) transition-metal dichalcogenide (TMD) layers as semiconducting channels often exhibit limited performance (e.g., low carrier mobility), in part, due to their high contact resistances caused by interfacing non-vdW three-dimensional (3D) metal electrodes. Herein, we report that this intrinsic contact issue can be efficiently mitigated by forming the 2D/2D in-plane junctions of 2D semiconductor channels seamlessly interfaced with 2D metal electrodes. For this, we demonstrated the selectively patterned conversion of semiconducting 2D PtSe2 (channels) to metallic 2D PtTe2 (electrodes) layers by employing a wafer-scale low-temperature chemical vapor deposition (CVD) process. We investigated a variety of field-effect transistors (FETs) employing wafer-scale CVD-2D PtSe2/2D PtTe2 heterolayers and identified that silicon dioxide (SiO2) top-gated FETs exhibited an extremely high hole mobility of ∼120 cm2 V-1 s-1 at room temperature, significantly surpassing performances with previous wafer-scale 2D PtSe2-based FETs. The low-temperature nature of the CVD method further allowed for the direct fabrication of wafer-scale arrays of 2D PtSe2/2D PtTe2 heterolayers on polyamide (PI) substrates, which intrinsically displayed optical pulse-induced artificial synaptic behaviors. This study is believed to vastly broaden the applicability of 2D TMD layers for next-generation, high-performance electronic devices with unconventional functionalities.

Reversible Transition of Semiconducting PtSe2 and Metallic PtTe2 for Scalable All-2D Edge-Contacted FETs

Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are highly promising as field-effect transistor (FET) channels in the atomic-scale limit. However, accomplishing this superiority in scaled-up FETs remains challenging due to their van der Waals (vdW) bonding nature with respect to conventional metal electrodes. Herein, we report a scalable approach to fabricate centimeter-scale all-2D FET arrays of platinum diselenide (PtSe2) with in-plane platinum ditelluride (PtTe2) edge contacts, mitigating the aforementioned challenges. We realized a reversible transition between semiconducting PtSe2 and metallic PtTe2 via a low-temperature anion exchange reaction compatible with the back-end-of-line (BEOL) processes. All-2D PtSe2 FETs seamlessly edge-contacted with transited metallic PtTe2 exhibited significant performance improvements compared to those with surface-contacted gold electrodes, e.g., an increase of carrier mobility and on/off ratio by over an order of magnitude, achieving a maximum hole mobility of ∼50.30 cm2 V-1 s-1 at room temperature. This study opens up new opportunities toward atomically thin 2D-TMD-based circuitries with extraordinary functionalities.

Make Selenium Reactive Again: Activating Elemental Selenium for Synthesis of Metal Selenides Ranging from Nanocrystals to Large Single Crystals

The inertness of elemental selenium is a significant obstacle in the synthesis of selenium-containing materials at low reaction temperatures. Over the years, several recipes have been developed to overcome this hurdle; however, most of the methods are associated with the use of highly toxic, expensive, and environmentally harmful reagents. As such, there is an increasing demand for the design of cheap, stable, and nontoxic reactive selenium precursors usable in the low-temperature synthesis of transition metal selenides with vast applications in nanotechnology, thermoelectrics, and superconductors. Herein, a novel synthetic route has been developed for activating elemental selenium by using a solvothermal approach. By comprehensive 77Se NMR, Raman, and infrared spectroscopies and gas chromatography-mass spectrometry, we show that the activated Se solution contained HSe-, [Se-Se]2-, and Se2- ions, as well as dialkyl selenide (R2Se) and dialkyl diselenide (R-Se-Se-R) species in dynamic equilibrium. This also corresponded to the first observation of naked Se22- in solution. The versatility of the developed Se precursor was demonstrated by the successful synthesis of (i) the polycrystalline room-temperature modification of the β-Ag2Se thermoelectric material; (ii) large single crystals of superconducting β-FeSe; (iii) CdSe nanocrystals with different particle sizes (3-10 nm); (iv) nanosheets of PtSe2; and (v) mono- and dibenzyl selenides and diselenides at room temperature. The simplicity and diversity of the developed Se activation method holds promise for applied and fundamental research.

Electrical field and biaxial strain tunable electronic properties of the PtSe2/Hf2CO2 heterostructure

The structure and electronic properties of two-dimensional vertical van der Waals PtSe2/Hf2CO2 heterostructure have been investigated based on first-principles calculations. The results show that the PtSe2 and Hf2CO2 monolayers form a type-I heterostructure with both the conduction band minimum (CBM) and valence band maximum (VBM) located at the Hf2CO2 layer. The electronic properties of PtSe2/Hf2CO2 heterostructure can be effectively adjusted by applying external electric field or biaxial strain. The transition in band alignment from type-I to type-II can be manipulated by controlling the strength and direction of the electric field. Additionally, the transition from type-I to type-II have also taken place under the strains, and the band gap of the PtSe2/Hf2CO2 heterostructure decreases with increasing the compressive or tensible strain. Under a strong strain of -8%, the PtSe2/Hf2CO2 heterostructure can transform from semiconductor to metal. These findings provide a promising method to tune the electronic properties of PtSe2/Hf2CO2 heterostructure and design a new vdW heterostructure in the applications for electronic and optoelectronic devices.

Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides

Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.

Effective Passivation of Anisotropic 2D GeAs via Graphene Encapsulation for Highly Stable Near-Infrared Photodetectors

Germanium arsenic (GeAs) as a promising two-dimensional (2D) semiconducting material has attracted extensive attention. The high carrier mobility and tunable bandgap of GeAs offer broad prospects in electronic and optoelectronic device-related applications. The unique intrinsic anisotropy arising from the low-symmetry structure can be applied in the design of new devices. However, the rapid degradation of mechanically exfoliated GeAs in the environment poses a challenge to its practical development in scalable devices. Here, an approach to stabilize the sensitive material without isolation from the ambient environment is reported. The graphene capping layer effectively suppresses environmental degradation, enabling the encapsulated GeAs photodetectors to maintain the key electronic properties for more than 3 months under ambient conditions. In addition, the regulation of the work function of graphene significantly improves the device performance. An improved responsivity of 965.07 A/W is 20 times higher than that of pure GeAs. This work provides opportunities for the practical application of GeAs and other environmentally sensitive 2D materials.

First-Principles Study of Structural and Electronic Properties of Monolayer PtX2 and Janus PtXY (X, Y = S, Se, and Te) via Strain Engineering

In this work, the structural parameters and electronic properties of PtX2 and Janus PtXY (X, Y = S, Se, and Te) are studied based on the density functional theory. The phonon spectra and the Born criteria of the elastic constant of these six monolayers confirm their stability. All PtX2 and Janus PtXY monolayers show an outstanding stretchability with Young's modulus ranging from 61.023 to 82.124 N/m, about one-fifth that of graphene and half that of MoS2, suggesting highly flexible materials. Our first-principles calculations reveal that the pristine PtX2 and their Janus counterparts are indirect semiconductors with their band gap ranging from 0.760 to 1.810 eV at the Perdew-Burke-Ernzerhof level (1.128-2.580 eV at the Heyd-Scuseria-Ernzerhof level). By applying biaxial compressive and tensile strain, the electronic properties of all PtX2 and Janus PtXY monolayers are widely tunable. Under small compressive strain, PtX2 and Janus PtXY structures remain indirect semiconductors. PtTe2, PtSeTe, and PtSTe monolayers undergo a semiconducting to metallic transition when the strain reaches -6, -8, and -10%, respectively. Interestingly, there is a transition from the indirect semiconductor to a quasi-direct one for all PtX2 and Janus PtXY monolayers when the tensile strain is applied.

Defect-Induced Ultrafast Nonadiabatic Electron-Hole Recombination Process in PtSe2 Monolayer

Defects are inevitable in two-dimensional materials due to the growth condition, which results in many unexpected changes in materials' properties. Here, we have mainly discussed the nonradiative recombination dynamics of PtSe₂ monolayer without/with native point defects. Based on first-principles calculations, a shallow p-type defect state is introduced by a Se antisite, and three n-type defect states with a double-degenerate shallow defect state and a deep defect state are introduced by a Se vacancy. Significantly, these defect states couple strongly to the pristine valence band maximum and lead to the enhancement of the in-plane vibrational E_g mode. Both factors appreciably increase the nonadiabatic coupling, accelerating the electron-hole recombination process. An explanation of PtSe₂-based photodetectors with the slow response, compared to conventional devices, is provided by studying this nonradiative transitions process.

Novel High Current-Carrying Quasi-1D Material: Nb2 PdS6

A quasi-one-dimensional van der Waals metallic nanowire Nb₂ PdS₆ is synthesized, and its electrical characteristics are analyzed. The chemical vapor transport method is applied to produce centimeter-scale Nb₂ PdS₆ crystals with needle-like structures and X-ray diffraction (XRD) confirms their high crystallinity. Scanning transmission electron microscopy reveals the crystal orientation and atomic arrangement of the specific region with atomic resolution. The electrical properties are examined by delaminating bulk Nb₂ PdS₆ crystals into a few nanometer-scale wires onto 100 nm-SiO₂ /Si substrates using a mechanical exfoliation process. Ohmic behavior is confirmed at the low-field measurements regardless of their thickness variation, and 4.64 nm-thick Nb₂ PdS₆ shows a breakdown current density (J_BD ) of 52 MA cm^-2 when the high electrical field is delivered. Moreover, with further exfoliation down to a single atomic chain, the J_BD of Nb₂ PdS₆ is predicted to have a value of 527 MA cm^-2 . The breakdown of Nb₂ PdS₆ proceeds due to the Joule heating mechanism, and the Nb₂ PdS₆ nanowires are well fitted to the 1D thermal dissipating model.

Stacking Polymorphism in PtSe2 Drastically Affects Its Electromechanical Properties

PtSe₂ is one of the most promising materials for the next generation of piezoresistive sensors. However, the large-scale synthesis of homogeneous thin films with reproducible electromechanical properties is challenging due to polycrystallinity. It is shown that stacking phases other than the 1T phase become thermodynamically available at elevated temperatures that are common during synthesis. It is shown that these phases can make up a significant fraction in a polycrystalline thin film and discuss methods to characterize them, including their Seebeck coefficients. Lastly, their gauge factors, which vary strongly and heavily impact the performance of a nanoelectromechanical device are estimated.

Highly Tunable, Broadband, and Negative Photoresponse MoS2 Photodetector Driven by Ion-Gel Gate Dielectrics

Revealing the light-matter interaction of molybdenum disulfide (MoS₂) and further improving its tunability facilitate the construction of highly integrated optoelectronics in communication and wearable healthcare, but it still remains a significant challenge. Herein, polyvinylidene fluoride and 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide (PVDF-EMIM-TFSI) ion-gel are employed to replace the oxide to fabricate a MoS₂-based phototransistor. The high capacitance enables a large tunability of the carrier concentration that results in ambipolar transport of MoS₂. It is found that the photoelectrical effect of the MoS₂ ion-gel phototransistor can be greatly tuned by the gate voltage including its photoresponsivity, detectivity, and response wavelength. An abnormal negative photoelectrical effect in both the electron branch and the hole branch is observed which is due to the adsorption/desorption of the C₂F₆NO₄S₂^- ion. By tuning the carrier concentration, the photoresponse can be extended from the visible region to the short infrared region. At 1200 nm, the photoresponse and detectivity can be tuned as large as 0.90 A/W and 1.88 × 10¹¹ Jones, respectively. Ultimately, by combining the tunability of gate voltage and wavelength, it is demonstrated that the photoelectrical effect is dominated by the photogating effect in the hole carrier, while it is coregulated by a photogating and photothermal effect in electron carrier. This study provides new insights for developing a highly tunable broadband photodetector with low consumption.

Atomic-Level Dynamics of Point Vacancies and the Induced Stretched Defects in 2D Monolayer PtSe2

Monolayer PtSe₂ holds great potential in extending 2D devices functionality, but their atomic-level-defect study is still limited. Here, we investigate the atomic structures of lattice imperfections from point to stretched 1D defects in 1T-PtSe₂ monolayers, using annular dark-field scanning transmission electron microscopy (ADF-STEM). We show Se vacancies (V_Se) have preferential sites with high beam-induced mobility. Diverse divacancies form with paired V_Se. We found stretched linear defects triggered by dynamics of V_Se that altered strain fields, distinct from the line vacancies in 2H-phase 2D materials. The paired V_Se stability and formation possibility of vacancy lines are evaluated by density functional theory. Lower sputtering energy in PtSe₂ than that in MoS₂ can cause larger possibility of atomic loss compared to diffusion required for creating V_Se lines. This provides atomic insights into the defects in 1T-PtSe₂ and shows how a deviated 1D structure is embedded in a 2D system without losing atom lines.

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

The lack of stable p-type van der Waals (vdW) semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle. Although p-type black phosphorus (bP) and tellurium (Te) have shown promising hole mobilities, the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues. Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p-type field-effect transistors (FETs). Importantly, the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm² V^-1 s^-1 at room temperature, that may lay the foundation for the future high-performance p-type 2D FET and metal-oxide-semiconductor (p-MOS) inverter. The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts, but also reduces the scattering centers at the interface between the channel material and the dielectric layer, thus resulting in the ultrahigh hole mobility .

CrxPt1-xTe2 (x ≤ 0.45): A Family of Air-Stable and Exfoliatable van der Waals Ferromagnets

The development of thermally robust, air-stable, exfoliatable two-dimensional van der Waals ferromagnetic materials with high transition temperatures is of great importance. Here, we establish a family of magnetic alloys, Cr_xPt_1-xTe₂ (x ≤ 0.45), that combines the stability of the late transition metal dichalcogenide PtTe₂ with magnetism from Cr. These materials are easily grown in crystal form from the melt, are stable in ambient conditions, and have among the highest concentrations of magnetic element substitution in transition metal dichalcogenide alloys. The highest Cr-substituted material, Cr_0.45Pt_0.55Te₂, exhibits ferromagnetic behavior below 220 K, and the easy axis is along the c-axis of the material, as determined using a combination of neutron diffraction and magnetic susceptibility measurements. These materials are metallic, with appreciable magnetoresistance below the Curie temperature. Single-crystal and powder diffraction measurements indicate Cr readily alloys onto the Pt site and does not sit in the van der Waals space, allowing these materials to be readily exfoliated to the few-layer regime. In summary, this air-stable, exfoliatable, high transition temperature ferromagnet shows great potential as building block for future 2D devices.

Two-Dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors

Low-cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic-integrated circuits (PICs), especially for wavelengths above 1.8 μm. Multilayered platinum diselenide (PtSe₂) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450 °C. We integrate PtSe₂-based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 μs. Fourier-transform IR spectroscopy in the wavelength range from 1.25 to 28 μm indicates the suitability of PtSe₂ for PDs far into the IR wavelength range. Our PtSe₂ PDs integrated by direct growth outperform PtSe₂ PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility makes PtSe₂ an attractive 2D material for optoelectronics and PICs.

Highly-Responsive Broadband Photodetector Based on Graphene-PTAA-SnS2 Hybrid

The development of wearable systems stimulate the exploration of flexible broadband photodetectors with high responsivity and stability. In this paper, we propose a facile liquid-exfoliating method to prepare SnS2 nanosheets with high-quality crystalline structure and optoelectronic properties. A flexible photodetector is fabricated using the SnS2 nanosheets with graphene-poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine (PTAA) hybrid structure. The liquid-exfoliated SnS2 nanosheets enable the photodetection from ultraviolet to near infrared with high responsivity and detectivity. The flexible broadband photodetector demonstrates a maximum responsivity of 1 × 105 A/W, 3.9 × 104 A/W, 8.6 × 102 A/W and 18.4 A/W under 360 nm, 405 nm, 532 nm, and 785 nm illuminations, with specific detectivity up to ~1012 Jones, ~1011 Jones, ~109 Jones, and ~108 Jones, respectively. Furthermore, the flexible photodetector exhibits nearly invariable performance over 3000 bending cycles, rendering great potentials for wearable applications.

Ultrathin single-crystal PtSe2 nanosheet for high-efficiency O2 electroreduction to H2O2

Electrochemical synthesis of H2O2 via a two-electron oxygen reduction reaction (2e‒ ORR) has emerged as a promising alternative to the anthraquinone process. However, the strong competition from the 4e‒ pathway...

Electron transport properties of PtSe2 nanoribbons with distinct edge reconstructions

Edge reconstructions of two-dimensional (2D) materials play a central role in determining the electronic transport properties of nanodevices. However, it is not feasible to study the relationship between edge reconstruction and electronic properties using experimental methods because of the complexity of the experimental environment and the diversity of edge reconstruction. Herein, we have combined density functional theory (DFT) calculations and the nonequilibrium Green's function (NEGF) method to investigate the inner physical mechanism of platinum diselenide (PtSe₂) nanoribbons, revealing distinctive negative differential resistance (NDR) behaviors in different nanoribbons with various edge reconstructions. The armchair PtSe₂ nanoribbons with different edge reconstructions are all metallic, while the zigzag PtSe₂ nanoribbons are semiconducting when the ratio of Pt to Se atoms at the edge is 1 : 2. These results reveal the internal source of the difference in the electron transport properties of PtSe₂ nanoribbons with different edge reconstructions, providing new ideas for the design of novel multifunctional PtSe₂ semiconducting and conducting electronic nanodevices with NDR properties.

Edge reconstructions of two-dimensional (2D) materials play a central role in determining the electronic transport properties of nanodevices.

Layer-by-Layer Growth of AA-Stacking MoS2 for Tunable Broadband Phototransistors

The stacking configuration has been considered as an important additional degree of freedom to tune the physical property of layered materials, such as superconductivity and interlayer excitons. However, the facile growth of highly uniform stacking configuration is still a challenge. Herein, the AA-stacking MoS₂ domains with a ratio up to 99.5% has been grown by using the modified chemical vapor deposition through introducing NaCl molecules in the confined space. By tuning the growth time, MoS₂ domains would transit from an AA-stacking bilayer to an AAAAA-stacking five-layer. The epitaxial growth mechanism has been insightfully studied, revealing that the critical nucleation size of the AA-stacking bilayer is 5.0 ± 3.0 μm. Through investigation of the photoluminescence, the photoemission, especially the indirect photoexcitation, is dependent on both the stacking fashion and layer number. Furthermore, by studying the gate-tuned MoS₂ phototransistors, we found a significant dependence on the stacking configuration of MoS₂ of the photoexcitation and a different gate tunable photoresponse. The AAA-stacking trilayer MoS₂ phototransistor delivers a photoresponse of 978.14 A W^-1 at 550 nm. By correction of the external quantum efficiency with external field and illumination power density, it has been found that the photoresponse tunability is dependent on the layer number due to the strong photogating effect. This strategy provides a general avenue for the epitaxial growth of van der Waals film which will further facilitate the applications in a tunable photodetector.

Ultrafast Interlayer Charge Transfer between Bilayer PtSe2 and Monolayer WS2

Interlayer charge transfer (CT) between PtSe₂ and WS₂ is studied experimentally. Layer-selective pump-probe and photoluminescence quenching measurements reveal ultrafast interlayer CT in the heterostructure formed by bilayer PtSe₂ and monolayer WS₂, confirming its type-II band alignment. The CT facilitates the formation of the interlayer excitons with a lifetime of several hundred ps to 1 ns, a diffusion coefficient of 0.9 cm² s^-1, and a diffusion length reaching 200 nm. These results demonstrate the integration of PtSe₂ with other materials in van der Waals heterostructures with novel charge-transfer properties and help develop fundamental understanding on the performance of various optoelectronic devices based on heterostructures involving PtSe₂.

Atomic Structure of Dislocations and Grain Boundaries in Two-Dimensional PtSe2

Each 2D material has a distinct structure for its grain boundary and dislocation cores, which is dictated by both the crystal lattice geometry and the elements that participate in bonding. For the class of noble metal dichalcogenides, this has yet to be thoroughly investigated at the atomic scale. Here, we examine the atomic structure of the dislocations and grain boundaries (GBs) in two-dimensional PtSe₂, using atomic-resolution annular dark field scanning transmission electron microscopy, combined with density functional theory and empirical force field calculations. The PtSe₂ we study adopts the 1T phase in large-area polycrystalline films with numerous planar tilt GB distinct dislocations, including 5|7_+Se and 4|4|8_+Se polygons, in tilt-angle monolayer GBs, with features sharply distinguished from those in 2H-phase TMDs. On the basis of dislocation cores, the GB structures are investigated in terms of pathways of dislocation chain arrangement, dislocation core distributions in different misorientation angles, and 2D strain fields induced. Based on the Frank-Bilby equation, the deduced Burgers vector magnitude is close to the lattice constant of 1T-PtSe₂, building the quantitative relationship of dislocation spacings and small GB angles. The 30° GBs are most frequently formed as a stitched interface between the armchair and zigzag lattices, constructed by a string of 5|7_+Se dislocations asymmetrically with a small deviation angle. Another special angle GB, mirror twin 60° GB, is also mapped linearly by metal-condensed asymmetric or Se-rich symmetric dislocations. This report gives atomic-level insights into the GBs and dislocations in 1T-phase noble metal TMD PtSe₂, which is a promising material to underpin extending properties of 2D materials by local structure engineering.

Charged Particle-Induced Surface Reactions of Organometallic Complexes as a Guide to Precursor Design for Electron- and Ion-Induced Deposition of Nanostructures

Focused electron beam-induced deposition (FEBID) and focused ion beam-induced deposition (FIBID) are direct-write fabrication techniques that use focused beams of charged particles (electrons or ions) to create 3D metal-containing nanostructures by decomposing organometallic precursors onto substrates in a low-pressure environment. For many applications, it is important to minimize contamination of these nanostructures by impurities from incomplete ligand dissociation and desorption. This spotlight on applications describes the use of ultra high vacuum surface science studies to obtain mechanistic information on electron- and ion-induced processes in organometallic precursor candidates. The results are used for the mechanism-based design of custom precursors for FEBID and FIBID.

Anion Modulation of Pt-Group Metals and Electrocatalysis Applications

Pt-group metal (PGM) electrocatalysts with unique electronic structures and irreplaceable comprehensive properties play crucial roles in electrocatalysis. Anion engineering can create a series of PGM compounds (such as RuP₂ , IrP₂ , PtP₂ , RuB₂ , Ru₂ B₃ , RuS₂ , etc.) that provide a promising prospect for improving the electrocatalytic performance and use of Pt-group noble metals. This review seeks the electrochemical activity origin of anion-modulated PGM compounds, and systematically analyzes and summarizes their synthetic strategies and energy-relevant applications in electrocatalysis. Orientation towards the sustainable development of nonfossil resources has stimulated a blossoming interest in the design of advanced electrocatalysts for clean energy conversion. The anion-modulated strategy for Pt-group metals (PGMs) by means of anion engineering possesses high flexibility to regulate the electronic structure, providing a promising prospect for constructing electrocatalysts with superior activity and stability to satisfy a future green electrochemical energy conversion system. Based on the previous work of our group and others, this review summarizes the up-to-date progress on anion-modulated PGM compounds (such as RuP₂ , IrP₂ , PtP₂ , RuB₂ , Ru₂ B₃ , RuS₂ , etc.) in energy-related electrocatalysis from the origin of their activity and synthetic strategies to electrochemical applications including hydrogen evolution reaction (HER), oxygen evolution reaction (OER), oxygen reduction reaction (ORR), hydrogen oxidation reaction (HOR), N₂ reduction reaction (NRR), and CO₂ reduction reaction (CO₂ RR). At the end, the key problems, countermeasures and future development orientations of anion-modulated PGM compounds toward electrocatalytic applications are proposed.

Recent Progress in Emerging Two-Dimensional Transition Metal Carbides

As a new member in two-dimensional materials family, transition metal carbides (TMCs) have many excellent properties, such as chemical stability, in-plane anisotropy, high conductivity and flexibility, and remarkable energy conversation efficiency, which predispose them for promising applications as transparent electrode, flexible electronics, broadband photodetectors and battery electrodes. However, up to now, their device applications are in the early stage, especially because their controllable synthesis is still a great challenge. This review systematically summarized the state-of-the-art research in this rapidly developing field with particular focus on structure, property, synthesis and applicability of TMCs. Finally, the current challenges and future perspectives are outlined for the application of 2D TMCs.

Tuning the charge carrier mobility in few-layer PtSe2 films by Se : Pt ratio

Recently, few-layer PtSe2 films have attracted significant attention due to their properties and promising applications in high-speed electronics, spintronics and optoelectronics. Until now, the transport properties of this material have not reached the theoretically predicted values, especially with regard to carrier mobility. In addition, it is not yet known which growth parameters (if any) can experimentally affect the carrier mobility value. This work presents the fabrication of horizontally aligned PtSe2 films using one-zone selenization of pre-deposited platinum layers. We have identified the Se : Pt ratio as a parameter controlling the charge carrier mobility in the thin films. The mobility increases more than twice as the ratio changes in a narrow interval around a value of 2. A simultaneous reduction of the carrier concentration suggests that ionized impurity scattering is responsible for the observed mobility behaviour. This significant finding may help to better understand the transport properties of few-layer PtSe2 films.

Influence of the choice of precursors on the synthesis of two-dimensional transition metal dichalcogenides

The interest in transition metal dichalcogenides (TMDCs; MEy/2; M = transition metal; E = chalcogenide, y = valence of the metal) has grown exponentially across various science and engineering disciplines due to their unique structural chemistry manifested in a two-dimensional lattice that results in extraordinary electronic and transport properties desired for applications in sensors, energy storage and optoelectronic devices. Since the properties of TMDCs can be tailored by changing the stacking sequence of 2D monolayers with similar or dis-similar materials, a number of synthetic routes essentially based on the disintegration of bulk (e.g., chemical exfoliation) or the integration of atomic constituents (e.g., vapor phase growth) have been explored. Despite a large body of data available on the chemical synthesis of TMDCs, experimental strategies with high repeatability of control over film thickness, phase and compositional purity remain elusive, which calls for innovative synthetic concepts offering, for instance, self-limited growth in the z-direction and homogeneous lateral topography. This review summarizes the recent conceptual advancements in the growth of layered van der Waals TMDCs from both mixtures of metal and chalcogen sources (multi-source precursors; MSPs) and from molecular compounds containing metals and chalcogens in one starting material (single-source precursor; SSPs). The critical evaluation of the strengths, limitations and opportunities of MSP and SSP approaches is provided as a guideline for the fabrication of TMDCs from commercial and customized molecular precursors. For example, alternative synthetic pathways using tailored molecular precursors circumvent the challenges of differential nucleation and crystal growth kinetics that are invariably associated with conventional gas phase chemical vapor transport (CVT) and chemical vapor deposition (CVD) of a mixture of components. The aspects of achieving high compositional purity and alternatives to minimize competing reactions or side products are discussed in the context of efficient chemical synthesis of TMDCs. Moreover, a critical analysis of the potential opportunities and existing bottlenecks in the synthesis of TMDCs and their intrinsic properties is provided.

Recent progress in Van der Waals 2D PtSe2

As a new member in two-dimensional (2D) transition metal dichalcogenides (TMDCs) family, platinum diselenium (PtSe₂) has many excellent properties, such as the layer-dependent band gap, high carrier mobility, high photoelectrical coupling, broadband response, etc, thus it shows good promising application in room temperature photodetectors, broadband photodetectors, transistors and other fields. Furthermore, compared with other TMDCs, PtSe₂is chemical inert in ambient, showing nano-devices potential with higher performance and stability. However, up to now, the synthesis and its device applications are in its early stage. This review systematically summarized the state of the art of PtSe₂from its structure, property, synthesis and potential application. Finally, the current challenges and future perspectives are outlined for the applications of 2D PtSe₂.

Optically controlled ultrafast terahertz switching in wafer scale PtSe2 thin films

In this study, we have reported a newly ultrafast optically modulated terahertz (THz) switch based on the transition metal dichalcogenide (TMD) material platinum diselenide (${{\rm PtSe}_2}$) with different thicknesses. The high-quality ${{\rm PtSe}_2}$ thin films with centimeter scale are fabricated on sapphire substrate by the chemical vapor deposition method. The optical pump and THz probe (OPTP) spectroscopy reveals that the THz response of the thin films is as fast as ${\sim} 2.0 \; {\rm ps}$ after photoexcitation of a 780 nm pulse. Interestingly, we found that the THz response time of the ${{\rm PtSe}_2}$ semimetal phase is faster than that of the semiconducting phase. In addition, the THz response time becomes faster when increasing the film thickness for the semimetal phase ${{\rm PtSe}_2}$, while for the semiconducting phase, the response time becomes slower with film thickness. Moreover, degenerate optical pump and optical probe spectroscopy (OPOP) demonstrated that the ultrafast photoinduced negative absorption (photoinduced bleaching) occurs after photoexcitation of 780 nm, and the subsequent recovery consists of two relaxation processes: the fast component with more than 85% of weight has a lifetime of ${\sim}{1.5}\;{\rm ps}$ for semiconducting-phase films and less than 1 ps for the semimetal phase, similar to the response time obtained from OPTP measurement. The slow component with less than 15% of weight has a lifetime of a few hundred picoseconds. The subpicosecond response time observed in both OPTP and OPOP is ascribed to the carrier trapping by defect states, and the slow relaxation process appearing in OPOP arises from the defect state relevant relaxation that is insensitive to the THz photoconductivity due to the frozen carrier mobility in defect states. Our experimental results demonstrate a new application of TMD materials such as ${{\rm PtSe}_2}$ in THz technology, for instance, the design and fabrication of THz modulators and THz switches.

Atomic-Layer Controlled Interfacial Band Engineering at Two-Dimensional Layered PtSe2/Si Heterojunctions for Efficient Photoelectrochemical Hydrogen Production

Platinum diselenide (PtSe₂) is a group-10 two-dimensional (2D) transition metal dichalcogenide that exhibits the most prominent atomic-layer-dependent electronic behavior of "semiconductor-to-semimetal" transition when going from monolayer to bulk form. This work demonstrates an efficient photoelectrochemical (PEC) conversion for direct solar-to-hydrogen (H₂) production based on 2D layered PtSe₂/Si heterojunction photocathodes. By systematically controlling the number of atomic layers of wafer-scale 2D PtSe₂ films through chemical vapor deposition (CVD), the interfacial band alignments at the 2D layered PtSe₂/Si heterojunctions can be appropriately engineered. The 2D PtSe₂/p-Si heterojunction photocathode consisting of a PtSe₂ thin film with a thickness of 2.2 nm (or 3 atomic layers) exhibits the optimized band alignment and delivers the best PEC performance for hydrogen production with a photocurrent density of -32.4 mA cm^-2 at 0 V and an onset potential of 1 mA cm^-2 at 0.29 V versus a reversible hydrogen electrode (RHE) after post-treatment. The wafer-scale atomic-layer controlled band engineering of 2D PtSe₂ thin-film catalysts integrated with the Si light absorber provides an effective way in the renewable energy application for direct solar-to-hydrogen production.

Electrochemically Exfoliated Platinum Dichalcogenide Atomic Layers for High-Performance Air-Stable Infrared Photodetectors

Platinum dichalcogenide (PtX₂), an emergent group-10 transition metal dichalcogenide (TMD) has shown great potential in infrared photonic and optoelectronic applications due to its layer-dependent electronic structure with potentially suitable bandgap. However, a scalable synthesis of PtSe₂ and PtTe₂ atomic layers with controlled thickness still represents a major challenge in this field because of the strong interlayer interactions. Herein, we develop a facile cathodic exfoliation approach for the synthesis of solution-processable high-quality PtSe₂ and PtTe₂ atomic layers for high-performance infrared (IR) photodetection. As-exfoliated PtSe₂ and PtTe₂ bilayer exhibit an excellent photoresponsivity of 72 and 1620 mA W^-1 at zero gate voltage under a 1540 nm laser illumination, respectively, approximately several orders of magnitude higher than that of the majority of IR photodetectors based on graphene, TMDs, and black phosphorus. In addition, our PtSe₂ and PtTe₂ bilayer device also shows a decent specific detectivity of beyond 10⁹ Jones with remarkable air-stability (>several months), outperforming the mechanically exfoliated counterparts under the laser illumination with a similar wavelength. Moreover, a high yield of PtSe₂ and PtTe₂ atomic layers dispersed in solution also allows for a facile fabrication of air-stable wafer-scale IR photodetector. This work demonstrates a new route for the synthesis of solution-processable layered materials with the narrow bandgap for the infrared optoelectronic applications.

Coordination-Driven Enhancement of Radiosensitization by Black Phosphorus via Regulating Tumor Metabolism

Coordination-driven surface modification is an effective strategy to achieve nanosystem functionalization and improved physicochemical performance. Black phosphorus (BP)-based nanomaterials demonstrate great potential in cancer therapy, but their poor stability, low X-ray mass attenuation coefficient, and nonselectivity limit the application in radiotherapy. Herein, we used unsaturated iridium complex to coordinate with BP nanosheets to synthesize a two-dimensional layered nanosystem (RGD-Ir@BP) with higher biostability. Ir complex improves the photoelectric properties and photoinduced charge carrier dynamics of BP, hence Ir@BP generated more singlet oxygen after X-ray irradiation. In in vivo experiments, with X-ray irradiation, RGD-Ir@BP effectively inhibited nasopharyngeal carcinoma tumor growth but with minor side effects. Additionally, based on untargeted metabolomics analysis, the combined treatment specifically down-regulated the tumor proliferative mark of prostaglandin E2 in cancer cells. In general, this study provides a design strategy of high-performance coordination-driven BP-based nanosensitizer in cancer radiotherapy.

Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition

Achieving a high-quality metal contact on two-dimensional (2D) semiconductors still remains a major challenge due to the strong Fermi level pinning and the absence of an effective doping method. Here, we demonstrate high performance "all-PtSe₂" field-effect transistors (FETs) completely free from those issues, enabled by the vertical integration of a metallic thick PtSe₂ source/drain onto the semiconducting ultrathin PtSe₂ channel. Owing to its inherent thickness-dependent semiconductor-to-metal phase transition, the transferred metallic PtSe₂ transforms the underlying semiconducting PtSe₂ into metal at the junction. Therefore, a fully metallized source/drain and semiconducting channel could be realized within the same PtSe₂ platform. The ultrathin PtSe₂ FETs with PtSe₂ vdW contact exhibits excellent gate tunability, superior mobility, and high ON current accompanied by one order lower contact resistance compared to conventional Ti/Au contact FETs. Our work provides a new device paradigm with a low resistance PtSe₂ vdW contact which can overcome a fundamental bottleneck in 2D nanoelectronics.

Layered PtSe2 for Sensing, Photonic, and (Opto-)Electronic Applications

Since the first experimental discovery of graphene 16 years ago, many other 2D layered nanomaterials have been reported. However, the majority of 2D nanostructures suffer from relatively complicated fabrication processes that have bottlenecked their development and their uptake by industry for practical applications. Here, the recent progress in sensing, photonic, and (opto-)electronic applications of PtSe₂ , a 2D layered material that is likely to be used in industries benefiting from its high air-stability and semiconductor-technology-compatible fabrication methods, is reviewed. The advantages and disadvantages of a range of synthesis methods for PtSe₂ are initially compared, followed by a discussion of its outstanding properties, and industrial and commercial advantages. Research focused on the broadband nonlinear photonic properties of PtSe₂ , as well as reports of its use as a saturable absorber in ultrafast lasers, are then reviewed. Additionally, the advances that have been achieved in a range of PtSe₂ -based field-effect transistors, photodetectors, and sensors are summarized. Finally, a conclusion on these results along with the outlook for the future is presented.

Hysteresis-reversible MoS2 transistor

Sulfur vacancy dominant hysteresis in MoS₂ transistors is observed. By decorating with Pt, the hysteresis behavior could switch from sulfur vacancy dominant to interfacial dominant, thereby realizing a hysteresis-reversible MoS₂ transistor.

Ternary Ta2 PdS6 Atomic Layers for an Ultrahigh Broadband Photoresponsive Phototransistor

2D noble-transition-metal chalcogenides (NTMCs) are emerging as a promising class of optoelectronic materials due to ultrahigh air stability, large bandgap tunability, and high photoresponse. Here, a new set of 2D NTMC: Ta₂ PdS₆ atomic layers is developed, displaying the excellent comprehensive optoelectronic performance with an ultrahigh photoresponsivity of 1.42 × 10⁶ A W^-1 , detectivity of 7.1 × 10¹⁰ Jones and a high photoconductive gain of 2.7 × 10⁶ under laser illumination at a wavelength of 633 nm with a power of 0.025 W m^-2 , which is ascribed to a photogating effect via study of the device band profiles. Especially, few-layer Ta₂ PdS₆ exhibits a good broadband photoresponse, ranging from 450 nm in the ultraviolet region to 1450 nm in the shortwave infrared (SIR) region. Moreover, this material also delivers an impressive electronic performance with electron mobility of ≈25 cm² V^-1 s^-1 , I_on /I_off ratio of 10⁶ , and a one-year air stability, which is better than those of most reported 2D materials. Our studies underscore Ta₂ PdS₆ as a promising 2D material for nano-electronic and nano-optoelectronic applications.

A 2D-SnSe film with ferroelectricity and its bio-realistic synapse application

Catering to the general trend of artificial intelligence development, simulating humans' learning and thinking behavior has become the research focus. Second-order memristors, which are more analogous to biological synapses, are the most promising devices currently used in neuromorphic/brain-like computing. However, few second-order memristors based on two-dimensional (2D) materials have been reported, and the inherent bionic physics needs to be explored. In this work, a second-order memristor based on 2D SnSe films was fabricated by the pulsed laser deposition technique. The continuously adjustable conductance of Au/SnSe/NSTO structures was achieved by gradually switching the polarization of a ferroelectric SnSe layer. The experimental results show that the bio-synaptic functions, including spike-timing-dependent plasticity, short-term plasticity and long-term plasticity, can be simulated using this two-terminal devices. Moreover, stimulus pulses with nanosecond pulse duration were applied to the device to emulate rapid learning and long-term memory in the human brain. The observed memristive behavior is mainly attributed to the modulation of the width of the depletion layer and barrier height is affected, at the SnSe/NSTO interface, by the reversal of ferroelectric polarization of SnSe materials. The device energy consumption is as low as 66 fJ, being expected to be applied to miniaturized, high-density, low-power neuromorphic computing.

Air-Stable Low-Symmetry Narrow-Bandgap 2D Sulfide Niobium for Polarization Photodetection

Low-symmetry 2D materials with unique anisotropic optical and optoelectronic characteristics have attracted a lot of interest in fundamental research and manufacturing of novel optoelectronic devices. Exploring new and low-symmetry narrow-bandgap 2D materials will be rewarding for the development of nanoelectronics and nano-optoelectronics. Herein, sulfide niobium (NbS₃ ), a novel transition metal trichalcogenide semiconductor with low-symmetry structure, is introduced into a narrowband 2D material with strong anisotropic physical properties both experimentally and theoretically. The indirect bandgap of NbS₃ with highly anisotropic band structures slowly decreases from 0.42 eV (monolayer) to 0.26 eV (bulk). Moreover, NbS₃ Schottky photodetectors have excellent photoelectric performance, which enables fast photoresponse (11.6 µs), low specific noise current (4.6 × 10^-25 A² Hz^-1 ), photoelectrical dichroic ratio (1.84) and high-quality reflective polarization imaging (637 nm and 830 nm). A room-temperature specific detectivity exceeding 10⁷ Jones can be obtained at the wavelength of 3 µm. These excellent unique characteristics will make low-symmetry narrow-bandgap 2D materials become highly competitive candidates for future anisotropic optical investigations and mid-infrared optoelectronic applications.

Long-term stable platinum diselenide for nanosecond pulse generation in a 3-µm mid-infrared fiber laser

In this paper, we fabricate the bulk-like multilayer platinum diselenide (PtSe₂) and employ it as saturable absorber (SA) for a passively Q-switched fiber laser operating at 2865 nm for the first time, to the best of our knowledge. The nonlinear optical measurements of the bulk-like multilayer PtSe₂ reveal efficient saturable absorption property at around 3 µm showing a modulation depth of 8.54% and a saturation intensity of 0.074 GW/cm². By introducing the bulk-like PtSe₂-SA into the Ho³⁺/Pr³⁺ co-doped ZBLAN fiber laser, stable Q-switched pulses with a duration as short as 620 ns are achieved at the pulse repetition rate of 238.1 kHz. The maximum average power is 93 mW, corresponding to a peak power of 0.63 W. The excellent long-term stability of the PtSe₂-SA was also verified utilizing the same experimental setup after 40 days of ambient storage of the PtSe₂ sample. The results not only validate the excellent nonlinear optical performance of PtSe₂, but also indicate that the bulk-like PtSe₂ is a promising long-term stable SA material under ambient conditions for nanosecond pulse generation in the 3-µm mid-infrared spectral region.

New Pressure Stabilization Structure in Two-Dimensional PtSe2

The frequency shifts and lattice dynamics to unveil the vibrational properties of platinum diselenide (PtSe₂) are investigated using pressure-dependent polarized Raman scattering at room temperature up to 25 GPa. The two phonon modes E_g and A_1g display similar hardening trends; both the Raman peak positions and full widths at half-maximum have distinct mutation phenomena under high pressure. Especially, the split E_g mode at 4.3 GPa confirms the change of the lattice symmetry. With the aid of the first-principles calculations, a new pressure stabilization structure C2/m of PtSe₂ has been found to be in good agreement with experiments. The band structures calculations reveal that the new phase is a novel type-I Dirac semimetal. The results demonstrate that the pressure-dependent Raman spectra combined with theoretical predictions may open a new window for searching and controlling the phase structure and Dirac cones of two-dimensional materials.

Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges

In recent years, emerging two-dimensional (2D) platinum diselenide (PtSe2) has quickly attracted the attention of the research community due to its novel physical and chemical properties. For the past few years, increasing research achievements on 2D PtSe2 have been reported toward the fundamental science and various potential applications of PtSe2. In this review, the properties and structure characteristics of 2D PtSe2 are discussed at first. Then, the recent advances in synthesis of PtSe2 as well as their applications are reviewed. At last, potential perspectives in exploring the application of 2D PtSe2 are reviewed.

Phase transition and thermal stability of epitaxial PtSe2 nanolayer on Pt(111)

This work relates to direct synthesis of the two-dimensional (2D) transition metal dichalchogenide (TMD) PtSe₂ using an original method based on chemical deposition during immersion of a Pt(111) surface into aqueous Na₂Se solution. Annealing of the sample induces significant modifications in the structural and electronic properties of the resulting PtSe₂ film. We report systematic investigations of temperature dependent phase transitions by combining synchrotron based high-resolution X-ray photoemission (XPS), low temperature scanning tunnelling microscopy (LT-STM) and low energy electron diffraction (LEED). From the STM images, a phase transition from TMD 2H-PtSe₂ to Pt₂Se alloy monolayer structure is observed, in agreement with the LEED patterns showing a transition from (4 × 4) to (√3 × √3)R30° and then to a (2 × 2) superstructure. This progressive evolution of the surface reconstruction has been monitored by XPS through systematic de-convolution of the Pt4f and Se3d core level peaks at different temperatures. The present work provides an alternative method for the large scale fabrication of 2D transition metal dichalchogenide films.

LEED, STM and XPS techniques were used to systematically study a temperature-dependent phase transition on a PtSe₂ film grown on the surface of Pt(111) by a chemical deposition method.

Flexible SnSe Photodetectors with Ultrabroad Spectral Response up to 10.6 μm Enabled by Photobolometric Effect

A broad spectral response is highly desirable for radiation detection in modern optoelectronics; however, it still remains a great challenge. Herein, we report a novel ultrabroadband photodetector based on a high-quality tin monoselenide (SnSe) thin film, which is even capable of detecting photons with energies far below its optical band gap. The wafer-size SnSe ultrathin films are epitaxially grown on sodium chloride via the 45° in-plane rotation by employing a sputtering method. The photodetector delivers sensitive detection to ultraviolet-visible-near infrared (UV-Vis-NIR) lights in the photoconductive mode and shows an anomalous response to long-wavelength infrared at room temperature. Under the mid-infrared light of 10.6 μm, the fabricated photodetector exhibits a large photoresponsivity of 0.16 A W^-1 with a fast response rate, which is ∼3 orders of magnitude higher than other results. The thermally induced carriers from the photobolometric effect are responsible for the sub-bandgap response. This mechanism is confirmed by a temperature coefficient of resistance of -2.3 to 4.4% K^-1 in the film, which is comparable to that of the commercial bolometric detectors. Additionally, the flexible device transferred onto polymer templates further displays high mechanical durability and stability over 200 bending cycles, indicating great potential toward developing wearable optoelectronic devices.

Intrinsic limit of contact resistance in the lateral heterostructure of metallic and semiconducting PtSe2

High contact resistance (R_c) limits the ultimate potential of two-dimensional (2-D) materials for future devices. To resolve the R_c problem, forming metallic 1T phase MoS₂ locally in the semiconducting 2H phase MoS₂ has been successfully demonstrated to use the 1T phase as source/drain electrodes in field effect transistors (FETs). However, the long-term stability of the 1T phase MoS₂ still remains as an issue. Recently, an unusual thickness-modulated phase transition from semiconducting to metallic has been experimentally observed in 2-D material PtSe₂. Metallic multilayer PtSe₂ and semiconducting monolayer PtSe₂ can be used as source/drain electrodes and channel, respectively, in FETs. Here, we present a theoretical study on the intrinsic lower limit of R_c in the metallic-semiconducting PtSe₂ heterostructure through density functional theory (DFT) combined with non-equilibrium Green's function (NEGF). Compared with R_c in the 1T-2H MoS₂ heterostructure, the multilayer-monolayer PtSe₂ heterostructure can offer much lower R_c due to the better capability of providing more transmission modes.

Two-Dimensional Noble-Metal Chalcogenides and Phosphochalcogenides

Noble-metal chalcogenides, dichalcogenides, and phosphochalcogenides are an emerging class of two-dimensional materials. Quantum confinement (number of layers) and defect engineering enables their properties to be tuned over a broad range, including metal-to-semiconductor transitions, magnetic ordering, and topological surface states. They possess various polytypes, often of similar formation energy, which can be accessed by selective synthesis approaches. They excel in mechanical, optical, and chemical sensing applications, and feature long-term air and moisture stability. In this Minireview, we summarize the recent progress in the field of noble-metal chalcogenides and phosphochalcogenides and highlight the structural complexity and its impact on applications.

NiSe2-anchored N, S-doped graphene/Ni foam as a free-standing bifunctional electrocatalyst for efficient water splitting

It is still challenging to develop non-precious free-standing bifunctional electrocatalysts with high efficiency for hydrogen and oxygen evolution reactions. Herein, for the first time, we present a novel hybrid electrocatalyst synthesized via a facile hydrothermal reaction, which is constructed from ultrafine NiSe2 nanoparticles/nanosheets homogeneously anchored on 3D graphene/nickel foam (NiSe2/3DSNG/NF). This hybrid delivers superior catalytic performances for hydrogen/oxygen evolution reactions and overall water splitting: it shows an ultra-small Tafel slope of 28.56 mV dec-1 for hydrogen evolution in acid, and a small Tafel slope of 42.77 mV dec-1 for the oxygen evolution reaction; particularly, in a two-electrode setup for water splitting, it requires an ultra-small potential of 1.59 V to obtain 10 mA cm-2 with nearly 100% faradaic efficiencies for H2 and O2. This study presents a new approach of catalyst design and fabrication to achieve highly efficient and low-cost water electrolysis.

Two-Dimensional Palladium Diselenide with Strong In-Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition

Two-dimensional (2D) palladium diselenide (PdSe₂ ) has strong interlayer coupling and a puckered pentagonal structure, leading to remarkable layer-dependent electronic structures and highly anisotropic in-plane optical and electronic properties. However, the lack of high-quality, 2D PdSe₂ crystals grown by bottom-up approaches limits the study of their exotic properties and practical applications. In this work, chemical vapor deposition growth of highly crystalline few-layer (≥2 layers) PdSe₂ crystals on various substrates is reported. The high quality of the PdSe₂ crystals is confirmed by low-frequency Raman spectroscopy, scanning transmission electron microscopy, and electrical characterization. In addition, strong in-plane optical anisotropy is demonstrated via polarized Raman spectroscopy and second-harmonic generation maps of the PdSe₂ flakes. A theoretical model based on kinetic Wulff construction theory and density functional theory calculations is developed and described the observed evolution of "square-like" shaped PdSe₂ crystals into rhombus due to the higher nucleation barriers for stable attachment on the (1,1) and (1,-1) edges, which results in their slower growth rates. Few-layer PdSe₂ field-effect transistors reveal tunable ambipolar charge carrier conduction with an electron mobility up to ≈294 cm² V^-1 s^-1 , which is comparable to that of exfoliated PdSe₂ , indicating the promise of this anisotropic 2D material for electronics.

Wafer-size growth of 2D layered SnSe films for UV-Visible-NIR photodetector arrays with high responsitivity

Due to its excellent electrical and optical properties, tin selenide (SnSe), a typical candidate of two-dimensional (2D) semiconductors, has attracted great attention in the field of novel optoelectronics. However, the large-area growth of high-quality SnSe films still remains a great challenge, which limits their practical applications. Here, wafer-size SnSe ultrathin films with high uniformity and crystallization were deposited via a scalable magnetron sputtering method. The results showed that the SnSe photodetector was highly sensitive to a broad range of wavelengths in the UV-visible-NIR range, especially showing an extremely high responsivity of 277.3 A W-1 with the corresponding external quantum efficiency of 8.5 × 104% and detectivity of 7.6 × 1011 Jones. These figures of merits are among the best performances for the sputter-fabricated 2D photodetector devices. The photodetecting mechanisms based on a photogating effect induced by the trapping effect of localized defects are discussed in detail. The results indicate that the few-layered SnSe films obtained from sputtering growth have great potential in the design of high-performance photodetector arrays.